Adhesive composition, laminate, method for producing laminate, and method for producing molded body including semiconductor chip

Abstract

An adhesive composition for forming an adhesive layer in a laminate having a support substrate, a molded body including a semiconductor chip covered with a cured product of a curable resin composition, and the adhesive layer that releasably bonds the support substrate and the molded body together, wherein the adhesive composition includes an adhesive component (A) that cures by a hydrosilylation reaction and a release agent component (B), the adhesive component (A) including a specific polyorganosiloxane (a1) and the release agent component (B) including a specific polyorganosiloxane (b1).

Description

Adhesive composition, laminate, method for manufacturing the laminate, and method for manufacturing a mold containing a semiconductor chip

[0001] The present invention relates to an adhesive composition, a laminate, a method for manufacturing a laminate, and a method for manufacturing a molded body including a semiconductor chip.

[0002] In the manufacturing of semiconductor devices, a molding process is used in which a semiconductor chip is covered with a curable resin composition such as epoxy resin to protect it from the external environment, and then the curable resin composition is cured to seal the semiconductor chip with a mold resin, which is the cured product of the curable resin composition. In this molding process, when manufacturing a molded body in which the semiconductor chip is covered with mold resin, it is desirable that the semiconductor chip be fixed to a support (also called a support substrate). On the other hand, after the semiconductor chip is covered with mold resin and the molded body is manufactured, it is desirable that the molded body be easily removed from the support. For this reason, a temporary adhesive is used to fix the semiconductor chip to the support. The temporary adhesive adheres and fixes the semiconductor chip to the support during manufacturing, but after the semiconductor chip is covered with mold resin and the molded body is manufactured, the adhesive layer peels off due to mechanical, thermal, or optical stimuli, and the molded body is separated from the support. Therefore, the performance required for temporary bonding is to maintain the adhesive strength between the semiconductor chip and the support until the semiconductor chip is covered with molding resin and the molded body is manufactured, and after the molded body is manufactured, the molded body can be easily removed from the support by peeling off the adhesive layer. Numerous temporary adhesives have been developed for use as temporary bonding, and for example, adhesives containing polydimethylsiloxane (Patent Document 1) and temporary adhesives containing epoxy-modified polysiloxane (Patent Document 2) have been proposed.

[0003] International Publication No. 2017 / 221772 Brochure International Publication No. 2018 / 216732 Brochure

[0004] Many of the temporary adhesives considered so far have not been intended for use in the molding process described above, and there has been room for consideration in developing temporary adhesives for temporarily bonding the support and the molded body. In the molding process, the deposited temporary adhesive comes into contact with the semiconductor chip and the curable resin composition (or its cured product) covering the semiconductor chip on one side, and with the support on the other side. Therefore, temporary adhesives used in the manufacture of molded bodies containing semiconductor chips using the molding process are required to have the ability to newly control adhesion and peeling with the curable resin composition (or its cured product) used in the molding process. In other words, the performance of a temporary adhesive used in the manufacture of molded bodies containing semiconductor chips using the molding process should be such that the adhesive strength between the semiconductor chip and the support is maintained while the molded body containing the semiconductor chip is being manufactured by the molding process, and after the molded body containing the semiconductor chip is manufactured, the adhesive layer can be peeled off, allowing the molded body containing the semiconductor chip to be easily removed from the support. Improvement of the temporary bonding performance described above is always required in the adhesive layer used when manufacturing molded bodies containing semiconductor chips by the molding process. Therefore, the present invention has been made in view of the above circumstances, and aims to provide an adhesive composition for forming an adhesive layer on an adhesive layer on a support substrate that allows for easy and good peeling of the molded body containing the semiconductor chip, which is made of a cured product of a curable resin composition covering the semiconductor chip, from the support substrate after the molded body containing the semiconductor chip has been manufactured on the adhesive layer on the support substrate. The present invention also aims to provide a laminate having an adhesive layer formed with the adhesive composition, a method for manufacturing the laminate, and a method for manufacturing a molded body containing a semiconductor chip obtained by peeling off the laminate.

[0005] The inventors of the present invention conducted diligent studies to solve the aforementioned problems and, as a result, found that they could solve the aforementioned problems, and completed the present invention having the following gist.

[0006] That is, the present invention includes the following. [1] An adhesive composition for forming the adhesive layer in a laminate having a supporting substrate, a molded body including a semiconductor chip covered with a cured product of a curable resin composition, and an adhesive layer that releasably bonds the supporting substrate and the molded body, wherein the adhesive composition includes an adhesive component (A) that cures by a hydrosilylation reaction and a release agent component (B), the adhesive component (A) includes SiO ２ siloxane units (Q units) represented by, R １ R ２ R ３ SiO １／２ siloxane units (M units) represented by, R ４ R ５ SiO ２／２ siloxane units (D units) represented by, and R ６ SiO ３／２ a polysiloxane (A1) containing a siloxane unit selected from the group consisting of siloxane units (T units) represented by the formula and combinations of two or more of these. (R １ to R ６ each independently represents a monovalent chemical group that is an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydrogen atom, provided that R １ to R ６ each are bonded to a silicon atom via a Si-C bond or a Si-H bond). The polysiloxane (A1) includes a polyorganosiloxane (a1) (the polyorganosiloxane (a1) has an alkenyl group having 2 to 10 carbon atoms, and SiO ２ at least one siloxane unit selected from the group consisting of siloxane units (Q' units) represented by the formula and R ６ 'SiO ３／２ siloxane units (T' units) represented by the formula, and R ６ ' represents a monovalent chemical group that is an alkyl group having 1 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms). The release agent component (B) includes a non-curable polyorganosiloxane (b1), and the polyorganosiloxane (b1) has a kinematic viscosity measured at 25°C of 9,000 mm ２An adhesive composition wherein the amount of polyorganosiloxane (a1) is less than or equal to / s, the content of polyorganosiloxane (a1) is less than 72% by mass relative to the nonvolatile components of the adhesive composition, and the content of polyorganosiloxane (b1) is 1.00% by mass or more relative to the nonvolatile components of the adhesive composition. [2] The polysiloxane (A1) is further polyorganosiloxane (a2) (the polyorganosiloxane (a2) has Si-H groups and SiO ２ Siloxane units (Q'' units) expressed as R １ "R ２ "R ３ "SiO １／２ Siloxane units (M'' units) expressed as R ４ "R ５ "SiO ２／２ Siloxane units (D'' units) represented by R ６ "SiO ３／２ The siloxane unit (T'' unit) represented by R is included, and the siloxane unit selected from the group consisting of two or more combinations thereof. １ "~R ６ The adhesive composition according to [1], comprising (wherein each of these terms independently represents an alkyl group having 1 to 10 carbon atoms or a hydrogen atom). [3] The polysiloxane (A1) is further a polyorganosiloxane (a3) ​​(the polyorganosiloxane (a3) ​​is R １ 'R ２ 'R ３ 'SiO １／２ Siloxane units (M' units) represented by R ４ 'R ５ 'SiO ２／２ It contains at least one of the siloxane units (D' units) represented by R １ '~R ５' represents a monovalent chemical group which is an alkyl group having 1 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms, respectively.) The adhesive composition according to [1] or [2]. [4] The adhesive composition according to any one of [1] to [3], wherein the ratio of the number of vinyl groups to the number of Si-H groups in the adhesive composition (Vinyl / SiH ratio) is 1.00 or less. [5] The adhesive composition according to any one of [1] to [4], wherein the adhesive component (A) further comprises a platinum group metal catalyst (A2). [6] The adhesive composition according to any one of [1] to [5], wherein the adhesive component (A) further comprises a polymerization inhibitor (A3). [7] The adhesive composition according to any one of [1] to [6], wherein the curable resin composition is an epoxy resin composition having an aromatic ring. [8] A laminate comprising a support substrate, a molded body including a semiconductor chip covered with a cured product of a curable resin composition, and an adhesive layer provided between the support substrate and the molded body, wherein the adhesive layer is an adhesive layer formed from any of the adhesive compositions described in [1] to [7]. [9] A method for manufacturing a laminate, comprising the steps of: applying an adhesive composition described in any of [1] to [7] onto a support substrate to form a coating film; placing a semiconductor chip on the side of the coating film opposite to the support substrate side, and then bonding the coating film and the semiconductor chip together; and, with the coating film and the semiconductor chip bonded together, curing a curable resin composition placed to cover the semiconductor chip to produce a molded body including the semiconductor chip, wherein the support substrate and the molded body are bonded together via an adhesive layer obtained from the coating film. A method for manufacturing a mold body including a semiconductor chip, comprising the steps of: forming a laminate by the method for manufacturing a laminate described in

[10] and [9]; and peeling off the support substrate and the mold body after the laminate has been formed.

[0007] According to the present invention, after manufacturing a molded body containing a semiconductor chip on an adhesive layer on a support substrate, an adhesive composition can be provided for forming an adhesive layer that allows for easy and good separation of the molded body containing the semiconductor chip, which is made of a cured product of a curable resin composition covering the semiconductor chip, from the support substrate. Furthermore, the present invention can provide a laminate having an adhesive layer formed with the adhesive composition, a method for manufacturing the laminate, and a method for manufacturing a molded body containing a semiconductor chip obtained by peeling off the laminate.

[0008] Figure 1 is a schematic cross-sectional view of an example of a laminate. Figure 2A is a schematic cross-sectional view (part 1) illustrating the manufacturing method of the laminate. Figure 2B is a schematic cross-sectional view (part 2) illustrating the manufacturing method of the laminate. Figure 2C is a schematic cross-sectional view (part 3) illustrating the manufacturing method of the laminate. Figure 2D is a schematic cross-sectional view (part 4) illustrating the manufacturing method of the laminate. Figure 3A is a schematic cross-sectional view (part 1) illustrating the manufacturing method of a mold containing a semiconductor chip. Figure 3B is a schematic cross-sectional view (part 2) illustrating the manufacturing method of a mold containing a semiconductor chip. Figure 3C is a schematic cross-sectional view (part 3) illustrating the manufacturing method of a mold containing a semiconductor chip.

[0009] (Adhesive Composition) The adhesive composition of the present invention is an adhesive composition for forming an adhesive layer that removably adheres between a support substrate and a molded body containing a semiconductor chip, the semiconductor chip being covered with a cured product of a curable resin composition. The adhesive composition contains an adhesive component (A) that hardens by a hydrosilylation reaction and a release agent component (B). The adhesive composition may contain other components.

[0010] In this specification, "mold containing a semiconductor chip" refers to a substrate in which a semiconductor chip is covered with a cured product of a curable resin composition, and consists of a semiconductor chip and a cured product of a curable resin composition (mold resin) covering it. A "mold containing a semiconductor chip" is manufactured, for example, by covering a semiconductor chip with a liquid curable resin composition and subjecting it to compression molding, and then going through a molding process to cure the curable resin composition, thereby covering the semiconductor chip with a cured product of the curable resin composition. Examples of curable resin compositions used in the molding process include mold resin compositions used in through-silicon via (TSV) technology. For example, a mold underfill composition is used as the mold resin composition. In this specification, the cured product obtained by curing the mold resin composition is also called the mold resin, and the cured layer obtained by curing the mold resin composition is called the mold resin layer or molded body. Furthermore, in this specification, a molded body containing a semiconductor chip may sometimes be simply referred to as a "molded body."

[0011] The release agent component (B) in the adhesive composition of the present invention is a component that does not undergo a hydrosilylation reaction and does not undergo a curing reaction. Here, "does not undergo a curing reaction" means that it does not undergo the curing reaction that occurs in the curing adhesive component (A). The adhesive composition of the present invention contains a release agent component (B) in addition to the adhesive component (A) that cures by a hydrosilylation reaction, thereby maintaining the adhesive force between the semiconductor chip and the support substrate during the molding process in which the mold body containing the semiconductor chip is manufactured, and after the manufacture of the mold body containing the semiconductor chip, which is made of a cured product of the curable resin composition covering the semiconductor chip, can be easily separated from the support substrate.

[0012] <Adhesive Component (A)> Adhesive component (A) is a component that hardens by a hydrosilylation reaction. Adhesive component (A) contains polysiloxane (A1). Polysiloxane (A1) is SiO ２ Siloxane units (Q units) represented by R １ R２ R ３ SiO １／２ Siloxane units (M units) expressed as R ４ R ５ SiO ２／２ Siloxane units (D units) represented by R ６ SiO ３／２ It includes siloxane units (T units) represented by and siloxane units selected from the group consisting of two or more combinations thereof. Here, R １ ~R ６ Each of these independently represents an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a monovalent chemical group consisting of a hydrogen atom. However, R １ ~R ６ These are each bonded to a silicon atom by either a Si-C bond or a Si-H bond.

[0013] R １ ~R ６ This group or atom is bonded to a silicon atom and independently represents an optionally substituted alkyl group, an optionally substituted alkenyl group, or a hydrogen atom. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, and the like.

[0014] <<Polysiloxane (A1)>> Polysiloxane (A1) contains polyorganosiloxane (a1). Polyorganosiloxane (a1) has alkenyl groups with 2 to 10 carbon atoms and SiO ２ Siloxane units (Q' units) represented by R ６ 'SiO ３／２ It contains at least one siloxane unit of the siloxane unit (T' unit) represented by , where R ６ ' represents a monovalent chemical group which is an alkyl group having 1 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms.

[0015] The content of polyorganosiloxane (a1) is less than 72% by mass, preferably 70% by mass or less, relative to the nonvolatile components of the adhesive composition. When the content of polyorganosiloxane (a1) is below the above upper limit, the separation of the mold body from the adhesive layer becomes easier. The lower limit of the content of polyorganosiloxane (a1) is not particularly limited, but from the viewpoint of maintaining the adhesive strength between the semiconductor chip and the support substrate, it is preferably 40% by mass or more, and more preferably 50% by mass or more. Here, the nonvolatile components of the adhesive composition refer to components other than the solvent contained in the adhesive composition.

[0016] The polysiloxane (A1) preferably further contains a polyorganosiloxane (a2). The polyorganosiloxane (a2) has an Si-H group (also called an "SiH structure") and SiO ２ Siloxane units (Q'' units) expressed as R １ "R ２ "R ３ "SiO １／２ Siloxane units (M'' units) expressed as R ４ "R ５ "SiO ２／２ Siloxane units (D'' units) represented by R ６ "SiO ３／２ It includes siloxane units (T'' units) represented by and siloxane units selected from the group consisting of two or more combinations thereof. Here, R １ "~R ６ Each of these independently represents an alkyl group or hydrogen atom having 1 to 10 carbon atoms.

[0017] The content of polyorganosiloxane (a2) is preferably, for example, 5 to 25% by mass, and more preferably 10 to 20% by mass, relative to the non-volatile components of the adhesive composition. If the content of polyorganosiloxane (a2) is above the lower limit, the adhesive strength between the semiconductor chip and the support substrate can be further increased. If the content of polyorganosiloxane (a2) is below the upper limit, the separation of the molded body from the adhesive layer becomes easier.

[0018] Polysiloxane (A1) preferably further contains polyorganosiloxane (a3). Polyorganosiloxane (a3) is R １ 'R ２ 'R ３ 'SiO １／２ a siloxane unit represented by (M' unit), and R ４ 'R ５ 'SiO ２／２ contains at least one siloxane unit selected from the siloxane unit (D' unit) represented by this formula. Here, R １ ' to R ５ ' each independently represents a monovalent chemical group that is an alkyl group having 1 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms. In addition, polyorganosiloxane (a3) is different from polyorganosiloxane (a1).

[0019] The content of polyorganosiloxane (a3) is preferably, for example, 0.1 to 20% by mass, more preferably 1 to 20% by mass, and even more preferably 5 to 20% by mass, relative to the non-volatile components of the adhesive composition. When the content of polyorganosiloxane (a3) is at least the above lower limit, the adhesive force between the semiconductor chip and the supporting substrate can be further enhanced. When the content of polyorganosiloxane (a3) is not more than the above upper limit, peeling between the molded body and the adhesive layer becomes easier.

[0020] The above polyorganosiloxane (a1) has an alkenyl group having 2 to 10 carbon atoms, and SiO ２ a siloxane unit represented by (Q' unit), and R ６ 'SiO ３／２ contains at least one siloxane unit selected from the siloxane unit (T' unit) represented by this formula, and further R １ 'R ２ 'R ３ 'SiO １／２ a siloxane unit represented by (M' unit), R ４ 'R ５ 'SiO ２／２ contains a siloxane unit (D' unit) represented by this formula and a siloxane unit selected from the group consisting of a combination of two or more of these, R １ ' to R ６' each independently represent a monovalent chemical group which is an alkyl group having 1 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms, and is preferably a polyorganosiloxane.

[0021] R １ ' to R ６ ' are groups bonded to a silicon atom, each independently represents an optionally substituted alkyl group or an optionally substituted alkenyl group, provided that R １ ' to R ６ ' at least one of which is an optionally substituted alkenyl group. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxy group, an aryl group, a heteroaryl group, and the like.

[0022] R １ " to R ６ " is a group or atom bonded to a silicon atom, each independently represents an optionally substituted alkyl group or a hydrogen atom, provided that R １ " to R ６ " at least one of which is a hydrogen atom. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxy group, an aryl group, a heteroaryl group, and the like.

[0023] The alkyl group may be linear, branched or cyclic; a linear or branched alkyl group is preferred. The number of carbon atoms thereof is not particularly limited, but is usually 1 to 40, preferably 30 or less, more preferably 20 or less, and still more preferably 10 or less.

[0024] Specific examples of substituted linear or branched alkyl groups include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, tert-butyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl-n-pentyl group, and 4-methyl-n-pentyl group. Examples of methyl groups include, but are not limited to, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2,2-dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1,1,2-trimethyl-n-propyl group, 1,2,2-trimethyl-n-propyl group, 1-ethyl-1-methyl-n-propyl group, and 1-ethyl-2-methyl-n-propyl group. The number of carbon atoms is usually 1 to 14, preferably 1 to 10, and more preferably 1 to 6. Among these, the methyl group is particularly preferred.

[0025] Specific examples of cyclic alkyl groups, whether substituted or not, include cyclopropyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropyl group, 1-ethyl-cyclopropyl group, 2-ethyl-cyclopropyl group, cyclohexyl group, 1-methyl-cyclopentyl group, 2-methyl-cyclopentyl group, 3-methyl-cyclopentyl group, 1-ethyl-cyclobutyl group, 2-ethyl-cyclobutyl group, 3-ethyl-cyclobutyl group, 1,2-dimethyl-cyclobutyl group, 1,3-dimethyl-cyclobutyl group, 2,2-dimethyl-cyclobutyl group, 2,3-dimethyl-cyclobutyl group, 2,4-dimethyl-cyclobutyl group, and 3,3-dimethyl-cyclobutyl group. Examples of cycloalkyl groups include cycloalkyl groups such as 2-cyclobutyl, 1-n-propyl-cyclopropyl, 2-n-propyl-cyclopropyl, 1-i-propyl-cyclopropyl, 2-i-propyl-cyclopropyl, 1,2,2-trimethyl-cyclopropyl, 1,2,3-trimethyl-cyclopropyl, 2,2,3-trimethyl-cyclopropyl, 1-ethyl-2-methyl-cyclopropyl, 2-ethyl-1-methyl-cyclopropyl, 2-ethyl-2-methyl-cyclopropyl, and 2-ethyl-3-methyl-cyclopropyl; bicycloalkyl groups such as bicyclobutyl, bicyclopentyl, bicyclohexyl, bicycloheptyl, bicyclooctyl, bicyclononyl, and bicyclodecyl. However, the number of carbon atoms is usually 3 to 14, preferably 4 to 10, and more preferably 5 to 6.

[0026] The alkenyl group may be linear or branched, and its number of carbon atoms is not particularly limited, but is usually 2 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less.

[0027] Specific examples of optionally substituted linear or branched alkenyl groups include, but are not limited to, vinyl groups, allyl groups, buttenyl groups, and pentenyl groups. The number of carbon atoms is usually 2 to 14, preferably 2 to 10, and more preferably 2 to 6. Among these, ethenyl groups (vinyl groups) and 2-propenyl groups are particularly preferred. Specific examples of optionally substituted cyclic alkenyl groups include, but are not limited to, cyclopentenyl and cyclohexenyl groups. The number of carbon atoms is usually 4 to 14, preferably 5 to 10, and more preferably 5 to 6.

[0028] As described above, polysiloxane (A1) includes polyorganosiloxane (a1), more preferably includes polyorganosiloxane (a1) and polyorganosiloxane (a2), and even more preferably includes polyorganosiloxane (a1), polyorganosiloxane (a3), and polyorganosiloxane (a2). In this specification, polyorganosiloxane (a1) and polyorganosiloxane (a3) ​​are collectively referred to as "polyorganosiloxane (a1), etc." The alkenyl groups contained in polyorganosiloxane (a1), etc. and the hydrogen atoms (Si-H groups) contained in polyorganosiloxane (a2) form a crosslinked structure through a hydrosilylation reaction by a platinum group metal catalyst (A2) and harden. As a result, a hardened film is formed.

[0029] Polyorganosiloxanes (a1), etc., are composed of siloxane units in which an alkyl group and / or an alkenyl group is bonded to the silicon atom, R １ '~R ６ The proportion of alkenyl groups in the total substituents represented by ' is preferably 0.1 to 50.0 mol%, more preferably 0.5 to 30.0 mol%, and the remaining R １ '~R ６ ' can be an alkyl group.

[0030] Polyorganosiloxane (a2) is composed of siloxane units in which an alkyl group and / or a hydrogen atom are bonded to the silicon atom, R １ "~R ６The proportion of hydrogen atoms in all substituents and substituted atoms represented by " is preferably 0.1 to 50.0 mol%, more preferably 10.0 to 40.0 mol%, and the remaining R １ "~R ６ " can be an alkyl group.

[0031] When polysiloxane (A1) includes polyorganosiloxane (a1), polyorganosiloxane (a3), and polyorganosiloxane (a2), in a preferred embodiment of the present invention, the molar ratio of alkenyl groups contained in polyorganosiloxane (a1), etc., to hydrogen atoms constituting the Si-H bond contained in polyorganosiloxane (a2) is in the range of 1.0:0.5 to 1.0:0.66.

[0032] When polysiloxane (A1) contains polyorganosiloxane (a1) and polyorganosiloxane (a2), the ratio of the number of vinyl groups to the number of Si-H groups (Vinyl / SiH ratio) is preferably 5.00 or less, more preferably 1.10 or less, even more preferably 1.00 or less, and particularly preferably 0.96 or less. When the Vinyl / SiH ratio is below the above upper limit, an adhesive composition with an excellent balance of peeling and adhesion can be obtained. The lower limit of the Vinyl / SiH ratio is not particularly limited, but is preferably 0.30 or more, and more preferably 0.40 or more. The Vinyl / SiH ratio is a value calculated as (total number of vinyl groups in the adhesive composition) / (total number of Si-H groups in the adhesive composition). The total number of vinyl groups in the adhesive composition is the sum of the moles obtained by multiplying the number of vinyl groups of the vinyl group-containing compound in the adhesive composition by the content (kg) of the compound. The total number of Si-H groups in the adhesive composition is the sum of the moles obtained by multiplying the number of Si-H groups in the compound having Si-H groups by the content (kg) of that compound in the adhesive composition. The vinyl / SiH ratio can be adjusted by the amount of the compound containing vinyl groups and the amount of the compound having Si-H groups in the adhesive composition.

[0033] The weight-average molecular weight of the polysiloxanes in polyorganosiloxane (a1), polyorganosiloxane (a3), and polyorganosiloxane (a2) is not particularly limited, but is usually 500 to 1,000,000 each, and is preferably 5,000 to 50,000 from the viewpoint of reproducibly realizing the effects of the present invention. In this invention, the weight-average molecular weight, number-average molecular weight, and degree of dispersion of polyorganosiloxane can be measured, for example, using a GPC instrument (EcoSEC, HLC-8320GPC manufactured by Tosoh Corporation) and a GPC column (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H manufactured by Tosoh Corporation), with a column temperature of 40°C, tetrahydrofuran as the eluent (elution solvent), a flow rate (flow velocity) of 0.35 mL / min, and polystyrene (Shodex manufactured by Showa Denko K.K.) as the standard sample.

[0034] The viscosities of polyorganosiloxane (a1), polyorganosiloxane (a3), and polyorganosiloxane (a2) are not particularly limited, but are typically 10 to 1,000,000 (mPa·s), and preferably 50 to 10,000 (mPa·s) from the viewpoint of reproducibly realizing the effects of the present invention. The viscosities of polyorganosiloxane (a1), polyorganosiloxane (a3), and polyorganosiloxane (a2) are values ​​measured with an E-type rotational viscometer at 25°C.

[0035] Polyorganosiloxane (a1), polyorganosiloxane (a3), and polyorganosiloxane (a2) react with each other via hydrosilylation. Therefore, the mechanism of curing is different from that mediated by, for example, silanol groups, and thus none of the siloxanes need to contain silanol groups or functional groups that form silanol groups through hydrolysis, such as alkyloxy groups.

[0036] <<Platinum Group Metal Catalyst (A2)>> The adhesive component (A) preferably contains a platinum group metal catalyst (A2) together with polysiloxane (A1). The platinum group metal catalyst is a platinum-based metal catalyst. Such a platinum-based metal catalyst is a catalyst for promoting the hydrosilylation reaction between an alkenyl group and a Si-H group.

[0037] Specific examples of platinum-based metal catalysts include known platinum-based compounds (platinum or compounds containing platinum). Specific examples include platinum powder, platinum black, chloroplatinic acid, alcohol-modified chloroplatinic acid, complexes of chloroplatinic acid and diolefins, platinum-olefin complexes, platinum-carbonyl complexes (e.g., platinum-bis(acetate), platinum-bis(acetylacetonate)), chloroplatinic acid-alkenylsiloxane complexes (e.g., chloroplatinic acid-divinyltetramethyldisiloxane complex, chloroplatinic acid-tetravinyltetramethylcyclotetrasiloxane complex), platinum-alkenylsiloxane complexes (e.g., platinum-divinyltetramethyldisiloxane complex, platinum-tetravinyltetramethylcyclotetrasiloxane complex), and complexes of chloroplatinic acid and acetylene alcohols. Among these, platinum-alkenylsiloxane complexes are particularly preferred due to their high efficacy in promoting hydrosilylation reactions. These hydrosilylation catalysts may be used individually or in combination of two or more.

[0038] The alkenylsiloxane used in the platinum-alkenylsiloxane complex is not particularly limited, but examples include 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, alkenylsiloxane oligomers obtained by substituting some of the methyl groups of these alkenylsiloxanes with ethyl groups, phenyl groups, etc., and alkenylsiloxane oligomers obtained by substituting the vinyl groups of these alkenylsiloxanes with allyl groups, hexenyl groups, etc. In particular, 1,3-divinyl-1,1,3,3-tetramethyldisiloxane is preferred because the resulting platinum-alkenylsiloxane complex has good stability.

[0039] The content of the platinum group metal catalyst (A2) in the adhesive component (A) is preferably 0.1 to 100 ppm by mass, more preferably 0.1 to 50 ppm by mass, and even more preferably 0.1 to 10 ppm by mass, relative to the total mass of the polysiloxane (A1). If the content of the platinum group metal catalyst (A2) is above the lower limit, the effect of promoting the hydrosilylation reaction can be further enhanced. If the content of the platinum group metal catalyst (A2) is below the upper limit, the viscosity of the adhesive composition can be reduced, making it possible to bond at high temperatures.

[0040] <<Polymerization Inhibitor (A3)>> The adhesive component (A) may contain a polymerization inhibitor (A3) for the purpose of suppressing the progress of the hydrosilylation reaction. The polymerization inhibitor (A3) is not particularly limited as long as it suppresses the progress of the hydrosilylation reaction, and specific examples include alkynyl alcohols such as 1-ethynyl-1-cyclohexanol (ECH) and 1,1-diphenyl-2-propyne-1-ol (DP). The amount of polymerization inhibitor (A3) is not particularly limited, but for example, it is usually 1000.0 ppm or more from the viewpoint of obtaining its effect, and 10000.0 ppm or less from the viewpoint of preventing excessive suppression of the hydrosilylation reaction, relative to the total amount of polyorganosiloxane (a1), polyorganosiloxane (a3), and polyorganosiloxane (a2).

[0041] <Release Agent Component (B)> Examples of release agent component (B) include non-curing polyorganosiloxanes. Polyorganosiloxanes as release agent component (B) do not usually react with adhesive component (A). Here, release agent component (B) is a component that does not undergo hydrosilylation reactions and does not undergo curing reactions. Examples include polyorganosiloxanes. In this invention, "does not undergo curing reactions" does not mean that no curing reactions occur at all, but rather that it does not undergo curing reactions that occur in curing adhesive component (A).

[0042] As for the release agent component (B), from the viewpoint of more favorably obtaining the effects of the present invention, the kinematic viscosity measured at 25°C is 9,000 mm². ２A polyorganosiloxane (b1) with a viscosity of 0.5 / s or less is preferred. The kinematic viscosity of the polyorganosiloxane (b1) measured at 25°C is 9,000 mm². ２ / s or less, 8000 mm ２ Preferably less than / s, and 7000 mm ２ / s or less is more preferable, and 5000 mm ２ A value of less than or equal to 3000 mm is even more preferable. ２ / s or less is even more preferable, and 1000 mm ２ A value of less than or equal to / s is particularly preferred. If the kinematic viscosity of the polyorganosiloxane (b1) measured at 25°C is less than or equal to the above upper limit, the separation of the molded body from the adhesive composition can be made easier. From the viewpoint of suppressing volatility, the lower limit of the kinematic viscosity of the polyorganosiloxane (b1) measured at 25°C should be, for example, 30 mm. ２ Preferably 50 mm / s or more. ２ A value of / s or higher is more preferable. The kinematic viscosity of polyorganosiloxane (b1) is given by centistokes (cSt) = mm ２ It is expressed as / s. Kinematic viscosity is calculated by multiplying viscosity (mPa·s) by density (g / cm³). ３ It can also be obtained by dividing by ). In other words, the value can be obtained from the viscosity and density measured with an E-type rotational viscometer at 25°C, and the kinematic viscosity (mm²) ２ / s)=viscosity (mPa・s) / density (g / cm ３ It can be calculated from the formula ). In this specification, among the polyorganosiloxane as the release agent component (B), the kinematic viscosity measured at 25°C is 9,000 mm². ２ Polyorganosiloxanes with a coefficient greater than / s are defined as polyorganosiloxane (b2).

[0043] The polyorganosiloxane (b1) content is 1.00% by mass or more, preferably 2.00% by mass or more, and more preferably 3.00% by mass or more, relative to the nonvolatile components of the adhesive composition. When the polyorganosiloxane (b1) content is above the lower limit, the separation of the mold body from the adhesive layer can be made easier. The upper limit of the polyorganosiloxane (b1) content is not particularly limited, but from the viewpoint of maintaining the adhesive strength between the semiconductor chip and the support, for example, it is preferably 20.0% by mass or less, and more preferably 15.0% by mass or less.

[0044] For polyorganosiloxane (b1), the kinematic viscosity measured at 25°C is 9,000 mmHg. ２ As long as the ratio is less than or equal to / s, there are no particular limitations, and examples include polydimethylsiloxane, epoxy group-containing polyorganosiloxane, phenyl group-containing polyorganosiloxane, and carbinol-modified polyorganosiloxane. As for polyorganosiloxane (b1), unmodified polyorganosiloxane is preferred from the viewpoint of suppressing changes in peelability due to functional groups.

[0045] <<Polydimethylsiloxane>> Unlike epoxy group-containing polydimethylsiloxane, phenyl group-containing polydimethylsiloxane, carbinol-modified polyorganosiloxane, etc., the "polydimethylsiloxane" in this invention is an unmodified polyorganosiloxane having a methyl group as an organic group bonded to a silicon atom.

[0046] Specific examples of polydimethylsiloxanes include those represented by formula (M1), but are not limited to these.

[0047] (n ４ (This indicates the number of repeating units and is a positive integer.)

[0048] The weight-average molecular weight of polydimethylsiloxane is not particularly limited, but is usually 100,000 to 2,000,000, and is preferably 200,000 to 1,200,000, more preferably 300,000 to 900,000, from the viewpoint of reproducibly achieving the effects of the present invention. The degree of dispersion is not particularly limited, but is usually 1.0 to 10.0, and is preferably 1.5 to 5.0, more preferably 2.0 to 3.0, from the viewpoint of reproducibly achieving suitable peeling. The weight-average molecular weight and degree of dispersion can be measured by the method described above for polyorganosiloxane.

[0049] <<Epoxy group-containing polyorganosiloxanes>> Examples of epoxy group-containing polyorganosiloxanes include R １１ R １２ SiO ２／２ Siloxane units (D) are represented by these units. １０ Examples include those containing units.

[0050] R １１ R is a group that bonds to a silicon atom and represents an alkyl group. １２ The group is a group that bonds to a silicon atom and represents an epoxy group or an organic group containing an epoxy group. Specific examples of alkyl groups include those mentioned above. The epoxy group in an organic group containing an epoxy group may be an independent epoxy group that does not condense with other rings, or it may be an epoxy group that forms a fused ring with other rings, such as a 1,2-epoxycyclohexyl group. Specific examples of organic groups containing an epoxy group include, but are not limited to, 3-glycidoxypropyl and 2-(3,4-epoxycyclohexyl)ethyl. In the present invention, a preferred example of an epoxy group-containing polyorganosiloxane is, but is not limited to, an epoxy group-containing polydimethylsiloxane.

[0051] Epoxy group-containing polyorganosiloxanes are the siloxane units (D) described above. １０ It includes units, but D １０In addition to units, Q units, M units and / or T units may also be included. In a preferred embodiment of the present invention, a specific example of the epoxy group-containing polyorganosiloxane is D １０ Polyorganosiloxanes consisting only of units, D １０ Polyorganosiloxane containing units and Q units, D １０ Polyorganosiloxane containing units and M units, D １０ Polyorganosiloxanes containing units and T units, D １０ Polyorganosiloxane containing units, Q units, and M units, D １０ Polyorganosiloxane containing units, M units, and T units, D １０ Examples include polyorganosiloxanes containing units, Q units, M units, and T units.

[0052] The epoxy group-containing polyorganosiloxane may have epoxy groups in its side chains, or at one end, or at both ends.

[0053] The epoxy group-containing polyorganosiloxane is preferably an epoxy group-containing polydimethylsiloxane having an epoxy value of 0.1 to 5. Its weight-average molecular weight is not particularly limited, but is usually 1,500 to 500,000, and is preferably 100,000 or less from the viewpoint of suppressing precipitation in the composition.

[0054] Specific examples of epoxy group-containing polyorganosiloxanes include, but are not limited to, those represented by formulas (E1) to (E3).

[0055] (m １ and n １ (This indicates the number of each repeating unit and is a positive integer.)

[0056] (m ２ and n ２ R is a positive integer indicating the number of repeating units, and R is an alkylene group having 1 to 10 carbon atoms, which may be interrupted by at least one of the oxygen atoms and unsaturated bonds (e.g., carbon-carbon double bond, carbon-carbon triple bond, -N=N-).

[0057] (m ３ , n ３ and o ３ R is a positive integer indicating the number of repeating units, and R is an alkylene group having 1 to 10 carbon atoms, which may be interrupted by at least one of the oxygen atoms and unsaturated bonds (e.g., carbon-carbon double bond, carbon-carbon triple bond, -N=N-).

[0058] In the above general formula, m １ , m ２ , m ３ , and O ３ If there are two or more of these repeating units, they may be arranged adjacent to each other to form a block, or they may be arranged randomly.

[0059] Furthermore, the polyorganosiloxane represented by formula (E3) is an epoxy group-containing polyorganosiloxane and a phenyl group-containing polyorganosiloxane, since it has both an epoxy group and a phenyl group. The epoxy group-containing polyorganosiloxane may or may not have a phenyl group.

[0060] The weight-average molecular weight of the epoxy group-containing polyorganosiloxane is not particularly limited, but is usually 100,000 to 2,000,000, and is preferably 200,000 to 1,200,000, more preferably 300,000 to 900,000, from the viewpoint of reproducibly achieving the effects of the present invention. The degree of dispersion is not particularly limited, but is usually 1.0 to 10.0, and is preferably 1.5 to 5.0, more preferably 2.0 to 3.0, from the viewpoint of reproducibly achieving suitable peeling. The weight-average molecular weight and degree of dispersion can be measured by the method described above for polyorganosiloxanes.

[0061] <<Phenyl group-containing polyorganosiloxanes>> Examples of phenyl group-containing polyorganosiloxanes include R ３１ R ３２ SiO ２／２ Siloxane units (D) are represented by these units. ３０ Examples include those containing units.

[0062] R ３１ R is a group that bonds to a silicon atom and represents a phenyl group or an alkyl group. ３２ This is a group that bonds to a silicon atom, representing a phenyl group. Specific examples of alkyl groups include those mentioned above, but a methyl group is preferred.

[0063] Phenyl group-containing polyorganosiloxanes are the siloxane units (D) described above. ３０ It includes units, but D ３０ In addition to units, Q units, M units, and / or T units may also be included.

[0064] In a preferred embodiment, a specific example of a phenyl group-containing polyorganosiloxane is D ３０ Polyorganosiloxanes consisting only of units, D ３０ Polyorganosiloxane containing units and Q units, D ３０ Polyorganosiloxane containing units and M units, D ３０ Polyorganosiloxanes containing units and T units, D ３０ Polyorganosiloxane containing units, Q units, and M units, D ３０ Polyorganosiloxane containing units, M units, and T units, D ３０ Examples include polyorganosiloxanes containing units, Q units, M units, and T units.

[0065] Specific examples of phenyl group-containing polyorganosiloxanes include, but are not limited to, those represented by formula (P1) or (P2).

[0066] (m5 and n5 are positive integers indicating the number of each repeating unit.)

[0067] (m6 and n6 are positive integers, representing the number of each repeating unit.)

[0068] In the above general formula, m ５ , and m ６ If there are two or more of these repeating units, they may be arranged adjacent to each other to form a block, or they may be arranged randomly.

[0069] <<Carbinol-Modified Polyorganosiloxane>> There are no particular restrictions on the carbinol-modified polyorganosiloxane. A carbinol-modified polyorganosiloxane is a polyorganosiloxane having a hydroxyl group directly bonded to a carbon atom. Thus, the carbinol in "carbinol-modified polyorganosiloxane" is not limited to methanol in the narrow sense, but includes methanol derivatives.

[0070] Carbinol-modified polyorganosiloxanes are, for example, carbinol-modified polydimethylsiloxanes.

[0071] The number of hydroxyl groups directly bonded to carbon atoms in a carbinol-modified polyorganosiloxane is not particularly limited and may be one or two or more.

[0072] Carbinol-modified polyorganosiloxane may have hydroxyl groups directly bonded to carbon atoms in its side chains, or at one end, or at both ends. It is preferable that the carbinol-modified polyorganosiloxane has hydroxyl groups directly bonded to carbon atoms in its side chains. In this case, even a small amount of carbinol-modified polyorganosiloxane can impart good release properties to the adhesive layer formed from the adhesive composition.

[0073] Carbinol-modified polyorganosiloxanes, for example, have a group represented by the following formula (Cg) as a group directly bonded to a silicon atom.

[0074] (In formula (Cg), R １ The symbol (*) represents a group with one or more carbon atoms. The asterisk (*) represents a bond to a silicon atom. However, the hydroxyl group in formula (Cg) is directly bonded to a carbon atom.

[0075] The number of hydroxyl groups directly bonded to a carbon atom in the group represented by formula (Cg) may be one or more. Examples of two or more include two, three, four, etc.

[0076] R １ The number of carbon atoms is not particularly limited; for example, it may be 1 to 30, 1 to 20, or 1 to 10.

[0077] Examples of groups represented by formula (Cg) include those represented by the following formulas (Cg-1) to (Cg-4). (In formula (Cg-1), R １１ R represents an alkylene group having 1 to 6 carbon atoms, which may be substituted with an alkoxy group having 1 to 3 carbon atoms. In formula (Cg-2), R １２ R represents an alkylene group with 1 to 6 carbon atoms. １３ R represents an alkylene group having 1 to 6 carbon atoms, which may be substituted with an alkoxy group having 1 to 3 carbon atoms or a hydroxyl group. In formula (Cg-3), R １４ R represents an alkylene group with 1 to 6 carbon atoms. １５ R represents an alkylene group with 1 to 3 carbon atoms. m represents an integer from 1 to 10. In formula (Cg-4), R １６ ~R １８ Each of these independently represents an alkylene group with 1 to 6 carbon atoms. In formulas (Cg-1) to (Cg-4), * represents a bond to a silicon atom.

[0078] R １１ ~R １８ The alkylene group may be linear, branched, or cyclic.

[0079] Examples of groups represented by formula (Cg) include the following: (In the formula, m1 represents an integer between 2 and 10. * represents a bond connecting to a silicon atom.)

[0080] Carbinol-modified polyorganosiloxanes are represented, for example, by the following formula (CPS-1) or formula (CPS-2). (In formula (CPS-1), R ５１ Each of these independently represents a hydrocarbon group. １ R represents the base represented by the above formula (Cg). n1 represents an integer greater than or equal to 0. n2 represents an integer greater than or equal to 1. In formula (CPS-2), R５２ Each of these independently represents a hydrocarbon group. ２ X represents the group represented by the above formula (Cg). ３ (where n3 represents a hydrocarbon group or a group represented by the above formula (Cg). n3 represents an integer of 0 or greater.)

[0081] R ５１ , R ５２ , and X ３ Examples of hydrocarbon groups in this include alkyl groups having 1 to 8 carbon atoms. A methyl group is preferred among the alkyl groups having 1 to 8 carbon atoms. That is, the carbinol-modified polyorganosiloxane is preferably a polydimethylsiloxane represented by the following formula (CPS-1a) or formula (CPS-2a). (In formula (CPS-1a), X １ represents the base represented by the above formula (Cg). n1 represents an integer greater than or equal to 0. n2 represents an integer greater than or equal to 1. In formula (CPS-2a), X ２ X represents the group represented by the above formula (Cg). ３ (where n3 represents a methyl group or a group represented by the above formula (Cg). n3 represents an integer of 0 or greater.)

[0082] Furthermore, the carbinol-modified polyorganosiloxane represented by formula (CPS-1) and the carbinol-modified polydimethylsiloxane represented by formula (CPS-1a) have hydroxyl groups directly bonded to carbon atoms in their side chains. The carbinol-modified polyorganosiloxane represented by formula (CPS-2) and the carbinol-modified polydimethylsiloxane represented by formula (CPS-2a) have hydroxyl groups directly bonded to carbon atoms at one or both ends.

[0083] Furthermore, in the carbinol-modified polyorganosiloxane represented by formula (CPS-1), if n2 is 2 or more, -Si(R ５１ ) (X １ The siloxane units represented by formula (CPS-1a) -O- may be arranged adjacently to form blocks, or they may be arranged randomly. In addition, in the carbinol-modified polydimethylsiloxane represented by formula (CPS-1a), when n2 is 2 or more, -Si(CH ３ ) (X１ The siloxane units represented by )-O- may be arranged adjacent to each other to form blocks, or they may be arranged randomly.

[0084] The weight-average molecular weight of the carbinol-modified polyorganosiloxane is not particularly limited, but is usually 500 to 1,000,000, and is preferably 5,000 to 50,000 from the viewpoint of reproducibly achieving the effects of the present invention. Furthermore, the degree of dispersion is not particularly limited, but is usually 1.0 to 10.0, and is preferably 1.5 to 5.0, more preferably 2.0 to 3.0, from the viewpoint of reproducibly achieving suitable peeling.

[0085] The polyorganosiloxane used as the release agent component (B) can be used alone or in combination of two or more types. Here, "two types" in the context of two or more polyorganosiloxanes refers to, for example, a combination of polydimethylsiloxane and an epoxy group-containing polyorganosiloxane, or a combination of polydimethylsiloxane and a phenyl group-containing polyorganosiloxane, and does not refer to a combination of two epoxy group-containing polyorganosiloxanes that differ in molecular weight, viscosity, type of epoxy group, etc.

[0086] The stripping agent component (B), polyorganosiloxane, may be a commercially available product or a synthesized product. Examples of commercially available polyorganosiloxanes include the WACKERSILICONE FLUID AK series (AK50, AK350, AK1000, AK10000, AK1000000) and GENIOPLAST, both manufactured by Wacker Chemistry. GUM, dimethyl silicone oil (KF-96L, KF-96A, KF-96, KF-96H, KF-69, KF-965, KF-968) and cyclic dimethyl silicone oil (KF-995) manufactured by Shin-Etsu Chemical Co., Ltd.; epoxy group-containing polyorganosiloxane (product names CMS-227, ECMS-327, EMS-622) manufactured by Gellest; epoxy group-containing polyorganosiloxane (KF-101, KF-1001, KF-1005, X-22-343) manufactured by Shin-Etsu Chemical Co., Ltd.; epoxy group-containing polyorganosiloxane (DOWSIL) manufactured by Dow-Toray. Examples include, but are not limited to, BY16-839, DOWSIL8413, DOWSIL8411; phenyl group-containing polyorganosiloxanes from Gellest (PMM-1043, PMM-1025, PDM-0421, PDM-0821); phenyl group-containing polyorganosiloxanes from Shin-Etsu Chemical Co., Ltd. (KF50-3000CS); and phenyl group-containing polyorganosiloxanes from Momentive (TSF431, TSF433).

[0087] Furthermore, commercially available carbinol-modified polyorganosiloxanes include, for example, KF6000, KF6001, KF6002, KF6003, X-22-4039, X-22-4015 from Shin-Etsu Silicone Co., Ltd.; DMS-C15, DMS-C16, DMS-C21, DMS-C23, DBE-C25, DBE-C22, DMS-CA21, DMS-CS26, CMS-221, CMS-222, CMS-832, CMS-626, MCR-C12, MCR-C18, MCR-C22, MCS-C11, MCS-C13, MCR-C61, MCR-C62, MCR-C63 from Dow Toray Corporation. Examples include 16-201, DOWSIL SF 8427 Fluid, DOWSIL SF 8428 Fluid, etc.

[0088] <Solvent> The adhesive composition may contain a solvent for purposes such as adjusting viscosity. Specific examples include, but are not limited to, aliphatic hydrocarbons, aromatic hydrocarbons, and ketones. More specifically, examples include, but are not limited to, hexane, heptane, octane, nonane, decane, undecane, dodecane, isododecane, menthane (p-menthane), limonene, toluene, xylene, methylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, and 5-nonanone. Such solvents can be used individually or in combination of two or more.

[0089] If the adhesive composition contains a solvent, its content is appropriately set considering the viscosity of the desired composition, the application method used, the thickness of the thin film to be produced, etc., but is typically in the range of about 10 to 90% by mass of the entire composition.

[0090] The viscosity of the adhesive composition used in the present invention is not particularly limited, but is usually 500 to 20,000 mPa·s at 25°C, and preferably 1,000 to 10,000 mPa·s.

[0091] An example of an adhesive composition used in the present invention can be manufactured by mixing an adhesive component (A), a release agent component (B), and a solvent. The mixing order is not particularly limited, but examples of methods that can easily and reproducibly manufacture an adhesive composition include, for example, dissolving the adhesive component (A) and the release agent component (B) in the solvent, or dissolving a portion of the adhesive component (A) in the solvent, dissolving the remainder of the adhesive component (A) and the release agent component (B) in the solvent, and mixing the resulting solutions, but are not limited to these. When preparing the adhesive composition, heating may be applied as appropriate, as long as the components do not decompose or deteriorate. In the present invention, for the purpose of removing foreign matter, the solvent or solution used may be filtered using a filter or the like during the manufacturing of the adhesive composition or after all components have been mixed.

[0092] If the adhesive component (A) further includes a platinum group metal catalyst (A2) and, if necessary, a polymerization inhibitor (A3), an example of the adhesive composition used in the present invention can be produced by mixing the adhesive component (A) containing the platinum group metal catalyst (A2) and, if necessary, the polymerization inhibitor (A3), with a release agent component (B) and a solvent. The mixing order is not particularly limited, but as an example of a method that can easily and reproducibly produce the adhesive composition, for example, a method in which the adhesive component (A) (including the platinum group metal catalyst (A2) and, if necessary, the polymerization inhibitor (A3)) and the release agent component (B) are dissolved in a solvent, or a method in which a part of the adhesive component (A) is dissolved in a solvent, the remainder of the adhesive component (A) and the release agent component (B) are dissolved in a solvent, and the resulting solutions are mixed, but are not limited to these. When preparing the adhesive composition, heating may be appropriately performed within a range that does not cause the components to decompose or deteriorate. In the present invention, for the purpose of removing foreign matter, the solvent or solution used may be filtered using a filter or the like during the manufacturing process of the adhesive composition or after all components have been mixed.

[0093] (Laminate) The laminate according to the present invention comprises a molded body containing a semiconductor chip, a support substrate, and an adhesive layer.

[0094] The adhesive layer is provided between the mold containing the semiconductor chip and the support substrate.

[0095] The laminate of the present invention is used to temporarily bond a semiconductor chip to a support substrate when manufacturing a mold containing a semiconductor chip. For example, the support substrate and the semiconductor chip are bonded via an adhesive layer. A curable resin composition is placed so as to cover the semiconductor chip. The curable resin composition is cured to produce a mold containing the semiconductor chip. In this way, from the time the semiconductor chip is bonded to the adhesive layer until the mold containing the semiconductor chip is produced, the semiconductor chip is bonded to the support substrate via the adhesive layer throughout the series of manufacturing processes. In other words, while the mold containing the semiconductor chip is being produced, the semiconductor chip is supported by the support substrate. On the other hand, after the production of the mold containing the semiconductor chip, the support substrate and the mold containing the semiconductor chip are separated. Preferred embodiments of the laminate of the present invention will be described in detail below.

[0096] <Support Substrate> The support substrate is not particularly limited as long as it is a material that can support the semiconductor chip when the mold containing the semiconductor chip is manufactured, but examples include glass support substrates and silicon support substrates.

[0097] The shape of the support substrate is not particularly limited, but for example, it can be disc-shaped. The disc-shaped support substrate does not need to have a perfectly circular surface; for example, the outer circumference of the support substrate may have a straight section called an orientation flat, or a notch. The thickness of the disc-shaped support substrate can be appropriately determined according to the size of the semiconductor substrate, etc., and is not particularly limited, but for example, it is 500 to 1,000 μm. The diameter of the disc-shaped support substrate can be appropriately determined according to the size of the semiconductor substrate, etc., and is not particularly limited, but for example, it is 100 to 1,000 mm.

[0098] An example of a support substrate is a glass wafer with a diameter of approximately 300 mm and a thickness of approximately 700 μm.

[0099] <Adhesive Layer> The adhesive layer is provided between the support substrate and the molded body containing the semiconductor chip. The adhesive layer is formed from the adhesive composition of the present invention described above.

[0100] The thickness of the adhesive layer in the laminate of the present invention is not particularly limited, but is usually 5 to 500 μm. From the viewpoint of maintaining film strength, it is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more. From the viewpoint of avoiding non-uniformity caused by thick films, it is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 120 μm or less, and still more preferably 100 μm or less.

[0101] The method for forming an adhesive layer from an adhesive composition will be explained below in the section titled (Method for Manufacturing Laminates).

[0102] <Molded Body Including Semiconductor Chips> As mentioned above, a molded body containing semiconductor chips is a substrate for electronic components in which semiconductor chips are covered with molding resin. The molded body is a substrate in which molding resin is arranged between semiconductor chips. The thickness of the molded body containing semiconductor chips (molded body) can be determined appropriately depending on the intended use, and is not particularly limited, but for example it is 500 to 1,000 μm.

[0103] <<Semiconductor Chip>> In the present invention, "semiconductor chip" refers not only to a single-layer semiconductor chip, but also to a semiconductor chip stack in which multiple semiconductor chips are stacked. The "semiconductor chip" of the present invention also includes a semiconductor chip integrator in which multiple semiconductor chips are stacked.

[0104] <<Molding Resin>> As described above, molding resin refers to the cured product of a curable resin composition used in the molding process. As a curable resin composition for covering semiconductor chips (molding resin composition (e.g., mold underfill composition for TSVs)), a material capable of covering a component made of metal or semiconductor is used. As the curable resin composition, resin compositions described in publications such as International Patent Publication No. WO2019 / 146617 and Japanese Patent Application Publication No. 2013-109410 can be used, and for example, epoxy resin compositions are used. As the curable resin composition, it is preferable to have an aromatic ring in order to improve the strength of the cured product. A preferred embodiment of the curable resin composition is, for example, an epoxy resin composition having an aromatic ring.

[0105] The following describes an example of the structure of a laminate using figures. Figure 1 shows a schematic cross-sectional view of an example of a laminate. The laminate in Figure 1 comprises a support substrate 1, an adhesive layer 2, and a molded body (also simply called a molded body) 5 containing semiconductor chips, in that order. The molded body 5 containing semiconductor chips comprises semiconductor chips 3 and a mold resin 4 disposed between the semiconductor chips 3. The adhesive layer 2 is provided between the molded body 5 containing semiconductor chips and the support substrate 1. As described above, the semiconductor chips 3 in Figure 1 may be a semiconductor chip aggregate formed by stacking multiple semiconductor chips.

[0106] (Method for Manufacturing a Laminate) The present invention provides a method for manufacturing a laminate in which a support substrate and a molded body are bonded together via an adhesive layer obtained from a coating film. The method for manufacturing a laminate includes the steps of: applying the adhesive composition of the present invention onto a support substrate to form a coating film (also referred to as the first step); placing a semiconductor chip on the side of the coating film opposite to the support substrate side, and then bonding the coating film and the semiconductor chip together (also referred to as the second step); and curing a curable resin composition that is placed so as to cover the semiconductor chip while the coating film and the semiconductor chip are bonded together to produce a molded body containing a semiconductor chip (also referred to as the third step).

[0107] The method for manufacturing the laminate of the present invention will be described in more detail. First step: Applying an adhesive composition to the surface of the support substrate to form a coating film (formation of an adhesive coating layer). If necessary, heating may be performed further to form an adhesive layer. Second step: After placing a semiconductor chip on the adhesive coating layer or adhesive layer, bonding the semiconductor chip to the adhesive coating layer or adhesive layer while performing at least one of a heat treatment and a reduced pressure treatment while the semiconductor chip is placed on the adhesive coating layer or adhesive layer. After bonding the semiconductor chip to the adhesive coating layer, the adhesive coating layer may be further heat-treated to cure and form an adhesive layer. Third step: Arranging a curable resin composition so as to cover the semiconductor chip while it is bonded to the adhesive coating layer or adhesive layer, and curing the curable resin composition by heating (molding) to produce a molded body in which the semiconductor chip is covered with a cured product (molding resin).

[0108] <First Step> The method of applying the adhesive composition is not particularly limited, but is usually done by spin coating. Alternatively, a method can be adopted in which a coating film is formed separately by spin coating or the like to form a sheet-like coating film, and this sheet-like coating film is then applied as the adhesive coating layer. The heating temperature of the applied adhesive composition cannot be specified in general, as it varies depending on the type and amount of adhesive components contained in the adhesive composition, whether or not a solvent is included, the boiling point of the solvent used, the desired thickness of the adhesive layer, etc., but is usually 80 to 150°C, and the heating time is usually 30 seconds to 5 minutes. If the adhesive composition contains a solvent, the applied adhesive composition is usually heated. The thickness of the adhesive coating layer obtained by applying the adhesive composition and heating it if necessary is usually about 5 to 500 μm, and is ultimately determined appropriately so that it falls within the above-mentioned range of adhesive layer thickness.

[0109] <Second Step> To explain the second step in more detail, for example, the step of the embodiment described in (i) below can be cited. (i) A semiconductor chip is placed on the adhesive coating layer or adhesive layer, and while performing a heat treatment and a reduced pressure treatment, a load is applied in the thickness direction to the semiconductor chip and the support substrate to bring them into close contact, thereby bonding the semiconductor chip to the adhesive coating layer or adhesive layer.

[0110] Furthermore, the step of curing the adhesive coating layer to form the adhesive layer may be performed after the semiconductor chip has been bonded to the adhesive coating layer, or it may be performed in conjunction with the bonding process. For example, the semiconductor chip may be placed on the adhesive coating layer, and while applying a load in the thickness direction of the semiconductor chip and the support substrate, the adhesive coating layer may be heated and cured to bond the semiconductor chip to the semiconductor chip substrate and the adhesive coating layer to the adhesive layer simultaneously. Alternatively, the adhesive layer may be formed from the adhesive coating layer, and then the semiconductor chip may be placed on the adhesive layer and bonded to the semiconductor chip to the adhesive layer while applying a load in the thickness direction of the semiconductor chip and the support substrate.

[0111] In manufacturing the laminate of the present invention, a load is applied in the thickness direction to the semiconductor chip and the support substrate while performing heat treatment, vacuum treatment, or both. The choice of which treatment conditions to adopt—heat treatment, vacuum treatment, or a combination of both—is determined appropriately after considering various factors such as the type of adhesive composition, film thickness, and desired adhesive strength.

[0112] The heat treatment is usually determined appropriately from a range of 20 to 160°C, from the viewpoint of removing the solvent from the composition. In particular, from the viewpoint of suppressing or avoiding excessive hardening or unwanted deterioration of the adhesive component (A), it is preferably 150°C or lower, more preferably 130°C or lower. The heating time is appropriately determined depending on the heating temperature and the type of adhesive, but from the viewpoint of reliably achieving suitable adhesion, it is usually 30 seconds or more, preferably 1 minute or more, but from the viewpoint of suppressing deterioration of the adhesive layer and other members, it is usually 10 minutes or less, preferably 5 minutes or less.

[0113] The vacuum treatment can be performed by exposing the adhesive coating layers that are in contact with each other to a pressure of 10 to 10,000 Pa. The vacuum treatment time is usually 1 to 30 minutes.

[0114] The load applied in the thickness direction to the semiconductor chip and support substrate is not particularly limited, as long as it does not adversely affect the semiconductor chip, support substrate, and the layers between them, and can firmly adhere them to each other; however, it is usually in the range of 10 to 50,000 N.

[0115] The post-heating temperature is preferably 120°C or higher from the viewpoint of achieving a sufficient curing rate, and preferably 260°C or lower from the viewpoint of preventing deterioration of the substrate and each layer. The post-heating time is usually 1 minute or more, preferably 5 minutes or more, from the viewpoint of achieving suitable bonding of the substrate and layers constituting the laminate, and is usually 180 minutes or less, preferably 120 minutes or less, from the viewpoint of suppressing or avoiding adverse effects on each layer due to excessive heating. Heating can be carried out using a hot plate, oven, etc. When post-heating using a hot plate, the semiconductor chip and the support substrate of the laminate may be placed facing downwards, and can be selected as appropriate. One of the purposes of the post-heating treatment is to realize an adhesive layer that is a more suitable self-supporting film, and in particular to suitably achieve curing by hydrosilylation reaction.

[0116] <Third Step> The third step can be carried out using a compression molding apparatus equipped with a mold. For example, a support substrate to which a semiconductor chip is bonded via an adhesive layer can be placed inside a compression molding apparatus equipped with a mold, a mold resin composition can be inserted into the mold, and the mold resin composition can be applied to cover the semiconductor chip on the adhesive layer. Next, the applied layer of mold resin composition is compressed and molded under heat, and the mold resin composition is cured by heating. This forms a molded body consisting of a semiconductor chip and a mold resin covering the semiconductor chip.

[0117] The method for manufacturing the laminate will be described in more detail below with reference to the figures. In this manufacturing method, the laminate shown in Figure 1 is produced. As shown in Figure 2A, an adhesive coating layer 2a made of an adhesive composition is formed on the support substrate 1. At this time, the adhesive coating layer 2a may be heated to form an adhesive layer 2. Next, as shown in Figure 2B, a semiconductor chip 3 is placed on the adhesive layer 2 or adhesive coating layer 2a, and a load in the thickness direction is applied to the semiconductor chip 3 and the support substrate 1 to bring them into close contact while performing at least one of a heat treatment and a vacuum treatment as appropriate, thereby bonding the semiconductor chip 3 to the adhesive layer 2 or adhesive coating layer 2a. If the semiconductor chip 3 is bonded to the adhesive coating layer 2a, the adhesive coating layer 2a may be cured by post-heat treatment to form an adhesive layer 2, and the semiconductor chip 3 may be fixed to the adhesive layer 2. Next, as shown in Figure 2C, the semiconductor chip 3 fixed on the adhesive layer 2 is covered with a curable resin composition (molding resin composition) 4a. In Figure 2C, multiple semiconductor chips 3 temporarily bonded to a support substrate 1 via an adhesive layer 2 are covered with a curable resin composition (molding resin composition) 4a. For example, a compression molding apparatus can be used to insert the curable resin composition (molding resin composition) 4a into a mold (not shown) in the compression molding apparatus, and the curable resin composition (molding resin composition) 4a can be arranged to cover the semiconductor chips 3. Next, as shown in Figure 2D, the curable resin composition (molding resin composition) 4a arranged to cover the semiconductor chips 3 is cured by heating to form a molded body (molded body) 5 having semiconductor chips in which the semiconductor chips 3 are covered with cured product (molding resin) 4 of the curable resin composition (molding resin composition). This molded body (molded body) 5 having semiconductor chips is a substrate in which semiconductor chips 3 are embedded in the molding resin 4.

[0118] In the molding process of a compression molding apparatus, a moldable resin composition (mold resin composition) 4a in the mold is cured to form a molded mold layer. For example, the mold resin composition, heated to 130 to 170°C, is supplied onto the adhesive layer 2 to cover the semiconductor chip 3 while maintaining a high viscosity state, and is compressed and molded to form a layer made of mold resin 4 on the adhesive layer 2. At that time, the temperature condition is, for example, 130 to 170°C. The pressure applied to the semiconductor chip 3 is, for example, 50 to 500 N / cm². ２ That is the case.

[0119] (Method for manufacturing a molded body containing a semiconductor chip) By using the laminate according to the present invention, a method for manufacturing a molded body containing a semiconductor chip can be provided. The method for manufacturing a molded body containing a semiconductor chip according to the present invention includes the steps of forming a laminate by the method for manufacturing a laminate according to the present invention described above, and peeling off the support substrate and the molded body after forming the laminate (also referred to as the X1 step).

[0120] The method for manufacturing a molded body containing a semiconductor chip according to the present invention will be described in more detail. Step X1: A step of separating the support substrate and the molded body containing the semiconductor chip in the laminate.

[0121] <Step X1> In step X1, the method for separating (debonding) the support substrate and the molded body containing the semiconductor chip is not particularly limited. For example, one method is to mechanically debond them using equipment with a sharp part (a so-called debonder). Specifically, for example, a sharp part is inserted between the support substrate and the molded body containing the semiconductor chip, and then the support substrate and the molded body containing the semiconductor chip are separated.

[0122] The method for manufacturing a mold containing a semiconductor chip according to the present invention may further include the following X2 step in addition to the above X1 step. Furthermore, it may also include the following X3 step. X2 step: A step of cleaning the mold containing the peeled semiconductor chip after step X1. X3 step: A step of cutting the cleaned mold containing the semiconductor chip and separating it into individual molds containing semiconductor chips (dicing step).

[0123] <Step X2> After the mold containing the semiconductor chip is separated from the support substrate, any residue of the adhesive layer remaining on the mold containing the semiconductor chip can be removed, for example, by a cleaning agent composition for cleaning semiconductor substrates, etc.

[0124] In step X2, the substrate can be cleaned by spraying the cleaning agent composition onto the surface of the mold containing the separated semiconductor chips, or by immersing the mold containing the separated semiconductor chips in the cleaning agent composition. Alternatively, the surface of the mold containing the semiconductor chips may be cleaned using a removal tape or the like. Examples of cleaning agent compositions used for cleaning include the following:

[0125] Detergent compositions typically contain a solvent. Examples of solvents include lactones, ketones, polyhydric alcohols, compounds having ester bonds, derivatives of polyhydric alcohols, cyclic ethers, esters, and aromatic organic solvents. Examples of lactones include γ-butyrolactone. Examples of ketones include acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentyl ketone, methyl isopentyl ketone, and 2-heptanone. Examples of polyhydric alcohols include ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol. Examples of compounds having ester bonds include ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate. Examples of derivatives of polyhydric alcohols include monoalkyl ethers such as monomethyl ether, monoethyl ether, monopropyl ether, and monobutyl ether, or compounds having ether bonds such as monophenyl ether, which are monomethyl ethers, monoethyl ether, monopropyl ether, and monobutyl ether of the above polyhydric alcohols or compounds having ester bonds. Among these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred. Examples of cyclic ethers include dioxane. Examples of esters include methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate. Examples of aromatic organic solvents include anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenethole, butylphenyl ether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, cymene, and mesitylene. These can be used individually or in combination of two or more.Among these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, and ethyl lactate (EL) are preferred.

[0126] Furthermore, a mixed solvent obtained by mixing PGMEA and a polar solvent is also preferred. The mixing ratio (mass ratio) can be appropriately determined considering the compatibility of PGMEA and the polar solvent, but it is preferably in the range of 1:9 to 9:1, more preferably 2:8 to 8:2. For example, when EL is used as the polar solvent, the mass ratio of PGMEA:EL is preferably 1:9 to 9:1, more preferably 2:8 to 8:2. When PGME is used as the polar solvent, the mass ratio of PGMEA:PGME is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3. When PGME and cyclohexanone are used as the polar solvent, the mass ratio of PGMEA:(PGME + cyclohexanone) is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3.

[0127] The cleaning agent composition may or may not contain salt, but it is preferable that it does not contain salt in order to increase its versatility when processing semiconductor substrates using laminates and to reduce costs.

[0128] An example of a detergent composition containing a salt is a detergent composition containing a quaternary ammonium salt and a solvent. The quaternary ammonium salt is composed of a quaternary ammonium cation and an anion, and is not particularly limited as long as it is used for this type of application. Typical examples of such quaternary ammonium cations include tetra(hydrocarbon)ammonium cations. On the other hand, the anion that pairs with it is the hydroxide ion (OH) － ); fluoride ion (F － ), chloride ion (Cl － ), bromide ions (Br － ), iodide ion (I － ) and other halogen ions; tetrafluoroborate ions (BF４ － ); Hexafluorophosphate ion (PF ６ － Examples include, but are not limited to, these.

[0129] The quaternary ammonium salt is preferably a halogen-containing quaternary ammonium salt, and more preferably a fluorine-containing quaternary ammonium salt. In the quaternary ammonium salt, the halogen atom may be contained in the cation or in the anion, but is preferably contained in the anion.

[0130] In one preferred embodiment, the fluorine-containing quaternary ammonium salt is tetra(hydrocarbon)ammonium fluoride. Specific examples of hydrocarbon groups in tetra(hydrocarbon)ammonium fluoride include alkyl groups having 1 to 20 carbon atoms, alkenyl groups having 2 to 20 carbon atoms, alkynyl groups having 2 to 20 carbon atoms, and aryl groups having 6 to 20 carbon atoms. In a more preferred embodiment, tetra(hydrocarbon)ammonium fluoride includes tetraalkylammonium fluoride. Specific examples of tetraalkylammonium fluoride include, but are not limited to, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride (also called tetrabutylammonium fluoride). Among these, tetrabutylammonium fluoride is preferred.

[0131] Quaternary ammonium salts such as tetraammonium fluoride may be used in hydrate form. Furthermore, quaternary ammonium salts such as tetraammonium fluoride may be used alone or in combination of two or more types. The amount of quaternary ammonium salt is not particularly limited as long as it dissolves in the solvent contained in the detergent composition, but is usually 0.1 to 30% by mass relative to the detergent composition.

[0132] When a detergent composition contains a salt, the solvent used in combination is not particularly limited as long as it is used for this type of application and dissolves salts such as quaternary ammonium salts. However, from the viewpoint of obtaining a detergent composition with excellent cleaning properties with good reproducibility, and from the viewpoint of dissolving salts such as quaternary ammonium salts well and obtaining a detergent composition with excellent uniformity, the detergent composition preferably contains one or more amide-based solvents.

[0133] A suitable example of an amide solvent is an acid amide derivative represented by formula (Z).

[0134] In the formula, R ０ R represents an ethyl group, a propyl group, or an isopropyl group, with ethyl and isopropyl groups being preferred, and ethyl group being more preferred. Ａ and R Ｂ Each of these independently represents an alkyl group having 1 to 4 carbon atoms. The alkyl group having 1 to 4 carbon atoms may be linear, branched, or cyclic, and specific examples include methyl, ethyl, propyl, isopropyl, cyclopropyl, n-butyl, isobutyl, s-butyl, t-butyl, and cyclobutyl groups. Of these, R Ａ and R Ｂ The groups are preferably methyl or ethyl, more preferably both are methyl or ethyl, and even more preferably both are methyl.

[0135] Examples of acid amide derivatives represented by formula (Z) include N,N-dimethylpropionamide, N,N-diethylpropionamide, N-ethyl-N-methylpropionamide, N,N-dimethylbutyrate amide, N,N-diethylbutyrate amide, N-ethyl-N-methylbutyrate amide, N,N-dimethylisobutyrate amide, N,N-diethylisobutyrate amide, and N-ethyl-N-methylisobutyrate amide. Of these, N,N-dimethylpropionamide and N,N-dimethylisobutylamide are particularly preferred, and N,N-dimethylpropionamide is more preferred.

[0136] The acid amide derivative represented by formula (Z) may be synthesized by substitution reaction between the corresponding carboxylic acid ester and amine, or a commercially available product may be used.

[0137] Another example of a preferred amide solvent is a lactam compound represented by formula (Y).

[0138] In equation (Y), R １０１ R represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. １０２ The symbol represents an alkylene group having 1 to 6 carbon atoms. Specific examples of alkyl groups having 1 to 6 carbon atoms include methyl, ethyl, n-propyl, and n-butyl groups, while specific examples of alkylene groups having 1 to 6 carbon atoms include, but are not limited to, methylene, ethylene, trimethylene, tetramethylene, pentamethylene, and hexamethylene groups.

[0139] Specific examples of lactam compounds represented by formula (Y) include α-lactam compounds, β-lactam compounds, γ-lactam compounds, δ-lactam compounds, etc., which can be used individually or in combination of two or more.

[0140] In one preferred embodiment, the lactam compound represented by formula (Y) comprises 1-alkyl-2-pyrrolidone (N-alkyl-γ-butyrolactam), in one more preferred embodiment, comprises N-methyl-2-pyrrolidone (NMP) or N-ethyl-2-pyrrolidone (NEP), and in one even more preferred embodiment, comprises N-methyl-2-pyrrolidone (NMP).

[0141] The cleaning agent composition used in this invention may contain water as a solvent, but from the viewpoint of avoiding corrosion of the substrate, etc., only organic solvents are usually intentionally used as solvents. In this case, however, it is not ruled out that trace amounts of water contained in the salt's hydrated water or in the organic solvent may be included in the cleaning agent composition. The water content of the cleaning agent composition used in this invention is usually 5% by mass or less.

[0142] <X3 process> In the X3 process, the mold containing the semiconductor chip after cleaning can also be separated into individual semiconductor chip-containing molds using a dicing process, which involves cutting the mold into chip shapes.

[0143] The method for manufacturing a molded body containing semiconductor chips (molded body) will be described in more detail below with reference to the figures. As shown in Figure 3A, after forming the laminate, the support substrate 1 and the molded body 5 containing the semiconductor chips are separated at the adhesive layer 2 (in Figure 3A, only the separated molded body 5 is shown; the support substrate 1 is not shown). If there is any residue of the adhesive layer on the molded body 5 containing the semiconductor chips that has been separated from the support substrate 1, it is preferable to subject it to a cleaning process to remove the residue of the adhesive layer. As shown in Figure 3B, the molded body 5 containing the semiconductor chips after cleaning can be subjected to a dicing process, for example, using a blade 6. This allows the individual semiconductor chips 3 to be separated into molded bodies 5, as shown in Figure 3C.

[0144] The semiconductor manufacturing method and the manufacturing method for a molded body including a semiconductor chip of the present invention may be modified in various ways with respect to the components and method elements related to the above-described process, as long as they do not depart from the spirit of the present invention. The semiconductor manufacturing method and the manufacturing method for a molded body including a semiconductor chip of the present invention may also include processes other than those described above.

[0145] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples.

[0146] The present invention will be described in more detail below with reference to preparation examples, examples, and comparative examples. Furthermore, different batches were used for the solutions described in the preparation examples for the examples and comparative examples. Therefore, the weighing values ​​described in the preparation examples are approximate, and the exact compositional ratios of the compositions in the examples and comparative examples are shown in the table. The apparatus used in the examples and comparative examples is shown below.

[0147] • Mixer: ARE-500, a self-rotating / revolving mixer manufactured by Thinky Co., Ltd. • Spin coater: APOGEE, manufactured by Cost-Effective Equipment Co., Ltd.

[0148] The raw materials used are listed below. Viscosity and kinematic viscosity were measured at 25°C. • Vinyl group-containing MQ resin (manufactured by Wacker Chemie, vinyl group count: 0.67 mol / kg): Hereafter abbreviated as MQ (corresponding to polyorganosiloxane (a1)) • Si-H group-containing linear polydimethylsiloxane with viscosity of approximately 100 mPa·s (manufactured by Wacker Chemie, Si-H group count: 4.28 mol / kg): Hereafter abbreviated as SiH100 (corresponding to polyorganosiloxane (a2)) • Si-H group-containing linear polydimethylsiloxane with viscosity of approximately 65 mPa·s (manufactured by Wacker Chemie, Si-H group count: 7.05 mol / kg): Hereafter abbreviated as SiH65 (corresponding to polyorganosiloxane (a2)) - Linear polydimethylsiloxane containing vinyl groups with a viscosity of approximately 200 mPa·s (manufactured by Wacker Chemie, vinyl group count: 0.24 mol / kg): Hereafter abbreviated as V200 (corresponding to polyorganosiloxane (a3)) - 1-ethynylcyclohexanol (manufactured by Wacker Chemie): Hereafter abbreviated as ECH (corresponding to polymerization inhibitor (A3)) - 1,1-diphenyl-1,2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.): Hereafter abbreviated as DP (corresponding to polymerization inhibitor (A3)) - Platinum catalyst (manufactured by Wacker Chemie) (corresponding to platinum group metal catalyst (A2)) - Kinematic viscosity approximately 50 mm ２ Polydimethylsiloxane (manufactured by Dow): AK50 (registered trademark) (equivalent to polyorganosiloxane (b1)) - Kinematic viscosity approximately 1000 mmHg ２ / s polydimethylsiloxane (manufactured by Dow): AK1000 (registered trademark) (equivalent to polyorganosiloxane (b1)) - Kinematic viscosity approximately 10,000 mmHg ２ Polydimethylsiloxane (manufactured by Dow): AK10000 (registered trademark) (equivalent to polyorganosiloxane (b2)). Note: "Kinematic viscosity approximately 10,000 mm²" ２ " / s" indicates a kinematic viscosity of 9500-10500 mmHg. ２ This means / s. • p-menthane (manufactured by Tokyo Chemical Industry Co., Ltd.) For calculation purposes, p-menthane was treated as a volatile component and the others as non-volatile components.

[0149] [1] Preparation of raw material solution [Preparation example 1] Preparation of raw material solution α MQ was dissolved in p-menthane to prepare raw material solution α with a solid content concentration of approximately 82%.

[0150] [Preparation Example 2] Preparation of raw material solution β DP was dissolved in an equal amount of ECH to prepare raw material solution β.

[0151] [Preparation Example 3] Preparation of raw material solution γ: Raw material solution γ was prepared by dissolving approximately 0.2 g of platinum catalyst in 5 g of raw material solution α.

[0152] [2] Preparation of adhesive composition [Example 1-1] Preparation of adhesive composition A Raw material solution α, SiH100, V200, raw material solution β, raw material solution γ, and AK50 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 68.1 parts by mass, SiH100: 11.5 parts by mass, V200: 7.21 parts by mass, ECH: 0.0982 parts by mass, DP: 0.0974 parts by mass, platinum catalyst: 0.0156 parts by mass, and AK50: 12.9 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, and then degassed at 2000 rpm for 12 min to prepare adhesive composition A. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 0.959, and the amount of p-menthane was 13.0 parts by mass per 100 parts by mass of non-volatile components. The ratio of vinyl groups to Si-H groups was calculated as (total number of vinyl groups in the adhesive composition) / (total number of Si-H groups in the adhesive composition). The total number of vinyl groups in the adhesive composition is the sum of the moles obtained by multiplying the number of vinyl groups of the compounds containing vinyl groups in the adhesive composition by the content (kg) of those compounds. The total number of Si-H groups in the adhesive composition is the sum of the moles obtained by multiplying the number of Si-H groups of the compounds having Si-H groups in the adhesive composition by the content (kg) of those compounds.

[0153] [Example 1-2] Preparation of adhesive composition B Raw material solution α, SiH100, V200, raw material solution β, raw material solution γ, and AK1000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 68.1 parts by mass, SiH100: 11.5 parts by mass, V200: 7.20 parts by mass, ECH: 0.0981 parts by mass, DP: 0.0974 parts by mass, platinum catalyst: 0.0156 parts by mass, and AK1000: 13.0 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition B. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 0.959, and the amount of p-menthane was 13.0 parts by mass per 100 parts by mass of non-volatile components.

[0154] [Examples 1-3] Preparation of adhesive composition C Raw material solution α, SiH100, V200, raw material solution β, raw material solution γ, and AK1000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 69.8 parts by mass, SiH100: 11.5 parts by mass, V200: 15.2 parts by mass, ECH: 0.0993 parts by mass, DP: 0.0977 parts by mass, platinum catalyst: 0.0182 parts by mass, and AK1000: 3.29 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition C. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 1.02, and the amount of p-menthane was 15.6 parts by mass per 100 parts by mass of nonvolatile components.

[0155] [Examples 1-4] Preparation of adhesive composition D Raw material solution α, SiH100, V200, raw material solution β, raw material solution γ, and AK1000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 70.0 parts by mass, SiH100: 11.3 parts by mass, V200: 9.51 parts by mass, ECH: 0.0987 parts by mass, DP: 0.0979 parts by mass, platinum catalyst: 0.0171 parts by mass, and AK1000: 9.02 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition D. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 1.02, and the amount of p-menthane was 15.7 parts by mass per 100 parts by mass of nonvolatile components.

[0156] [Examples 1-5] Preparation of adhesive composition E Raw material solution α, SiH100, V200, raw material solution β, raw material solution γ, and AK1000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 60.0 parts by mass, SiH100: 10.1 parts by mass, V200: 16.6 parts by mass, ECH: 0.100 parts by mass, DP: 0.0988 parts by mass, platinum catalyst: 0.0179 parts by mass, and AK1000: 13.0 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition E. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 1.02, and the amount of p-menthane was 13.4 parts by mass per 100 parts by mass of non-volatile components.

[0157] [Examples 1-6] Preparation of adhesive composition F Raw material solution α, SiH100, V200, raw material solution β, raw material solution γ, and AK1000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 70.0 parts by mass, SiH100: 11.1 parts by mass, V200: 5.70 parts by mass, ECH: 0.100 parts by mass, DP: 0.0969 parts by mass, platinum catalyst: 0.0183 parts by mass, and AK1000: 13.0 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition F. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 1.02, and the amount of p-menthane was 15.7 parts by mass per 100 parts by mass of nonvolatile components.

[0158] [Example 1-7] Preparation of adhesive composition G Raw material solution α, SiH65, V200, raw material solution β, raw material solution γ, and AK1000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 69.8 parts by mass, SiH65: 17.4 parts by mass, V200: 9.64 parts by mass, ECH: 0.109 parts by mass, DP: 0.107 parts by mass, platinum catalyst: 0.0177 parts by mass, and AK1000: 2.99 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition G. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 0.400, and the amount of p-menthane was 15.6 parts by mass per 100 parts by mass of non-volatile components.

[0159] [Example 1-8] Preparation of adhesive composition H Raw material solution α, SiH65, V200, raw material solution β, raw material solution γ, and AK1000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 70.0 parts by mass, SiH65: 17.1 parts by mass, V200: 5.66 parts by mass, ECH: 0.107 parts by mass, DP: 0.106 parts by mass, platinum catalyst: 0.0175 parts by mass, and AK1000: 7.00 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition H. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 0.400, and the amount of p-menthane was 15.7 parts by mass per 100 parts by mass of non-volatile components.

[0160] [Examples 1-9] Preparation of adhesive composition I The raw material solution α, SiH65, V200, raw material solution β, raw material solution γ, and AK1000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 70.0 parts by mass, SiH65: 16.7 parts by mass, V200: 0.127 parts by mass, ECH: 0.104 parts by mass, DP: 0.103 parts by mass, platinum catalyst: 0.0181 parts by mass, and AK1000: 13.0 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition I. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 0.400, and the amount of p-menthane was 15.7 parts by mass per 100 parts by mass of non-volatile components.

[0161] [Comparative Example 1-1] Preparation of adhesive composition a: Raw material solution α, SiH100, V200, raw material solution β, raw material solution γ, and AK10000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 69.5 parts by mass, SiH100: 11.0 parts by mass, V200: 5.65 parts by mass, ECH: 0.105 parts by mass, DP: 0.107 parts by mass, platinum catalyst: 0.0178 parts by mass, and AK10000: 13.6 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition a. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 1.02, and the amount of p-menthane was 15.6 parts by mass per 100 parts by mass of nonvolatile components.

[0162] [Comparative Example 1-2] Preparation of adhesive composition b The raw material solution α, SiH100, V200, raw material solution β, raw material solution γ, and AK1000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 70.0 parts by mass, SiH100: 11.7 parts by mass, V200: 17.1 parts by mass, ECH: 0.0988 parts by mass, DP: 0.0970 parts by mass, platinum catalyst: 0.0174 parts by mass, and AK1000: 0.991 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition b. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 1.02, and the amount of p-menthane was 15.7 parts by mass per 100 parts by mass of nonvolatile components.

[0163] [Comparative Example 1-3] Preparation of adhesive composition c The raw material solution α, SiH100, V200, raw material solution β, raw material solution γ, and AK1000 were mixed in a screw tube in the following proportions per 100 parts by mass of nonvolatile components: MQ: 72.0 parts by mass, SiH100: 11.3 parts by mass, V200: 3.51 parts by mass, ECH: 0.0991 parts by mass, DP: 0.101 parts by mass, platinum catalyst: 0.0197 parts by mass, and AK1000: 13.0 parts by mass, respectively. A stirrer was used for mixing, and the mixture was mixed twice at 1000 rpm for 5 min, followed by degassing at 2000 rpm for 12 min to prepare adhesive composition c. The ratio of vinyl groups to Si-H groups (Vinyl / SiH ratio) was 1.02, and the amount of p-menthane was 16.1 parts by mass per 100 parts by mass of nonvolatile components.

[0164] The compositions of the adhesive compositions in the above examples and comparative examples are shown in Tables 1 and 2. In the table, the values ​​in the composition column represent the parts by mass of each component when the total mass of nonvolatile components is 100 parts by mass. Nonvolatile components are all components of the adhesive composition except the solvent (p-menthane). Also, "-" in the table means that the component is not contained.

[0165]

[0166]

[0167] [3] Preparation of epoxy resin composition (curable resin composition) δ 3.0 g of epoxy resin; jER630LSD (manufactured by Mitsubishi Chemical Corporation, aminophenol-type epoxy resin (epoxy resin having an aromatic ring)), 2.8 g of curing agent; 2,4 (or 4,6)-diethyl-6 (or 2)-methylbenzene-1,3-diamine (manufactured by Tokyo Chemical Industry Co., Ltd.), and 0.12 g of curing catalyst; 2-methylimidazole (manufactured by Tokyo Chemical Industry Co., Ltd.) were weighed into a 50 mL screw tube and mixed. A stirrer was used for mixing, and the mixture was mixed at 1000 rpm for 5 min, and then degassed at 2000 rpm for 12 min to prepare a pale yellow epoxy resin composition (curable resin composition) δ in which 2-methylimidazole powder was dispersed.

[0168] [4] Fabrication of Laminate [Example 2-1] Fabrication of Laminate A Two 4-inch silicon wafers (hereinafter also simply referred to as "wafers") were coated with adhesive composition A prepared in Example 1-1 using a spin coater at 800 rpm and 30 s. The wafers coated with adhesive composition A were heated on a hot plate in the following order: 90°C for 90 s, 130°C for 5 min, and 200°C for 5 min, and then allowed to cool. Epoxy resin composition δ was dropped onto the surface of one wafer coated with adhesive composition A, and the other wafer was placed on top with the surface coated with adhesive composition A facing downwards. That is, the epoxy resin composition δ was sandwiched between the two wafers so that it was between the coated surfaces of adhesive composition A, and the two wafers were heated on a hot plate at 120°C for 30 min. After heating, it was allowed to cool to obtain laminate A.

[0169] [Examples 2-2 to 2-9, Comparative Examples 2-1 to 2-3] Preparation of Laminates B to I, a to c Laminates were prepared in the same manner as in Example 2-1, except that adhesive composition A was changed to adhesive compositions B to I prepared in Examples 1-2 to 1-9, or adhesive compositions a to c prepared in Comparative Examples 1-1 to 1-3, by sandwiching epoxy resin composition δ between two wafers coated with the adhesive composition, and these were designated as laminates B to I, a to c.

[0170] [Investigation of Delamination Interface of Laminates] Two opposing wafers of laminates A-I and a-c, prepared in Examples 2-1 to 2-9 and Comparative Examples 2-1 to 2-3, were pulled apart by hand. At that time, the feasibility of delamination and, if delamination was possible, the delamination interface were observed. The results were classified according to the following criteria and are shown in Table 3. In Table 3, "Fulfillable" in the "Feasibility of Delamination" column means that delamination was possible, and "Not Fulfillable" means that the wafer was damaged because delamination was not possible. In Table 3, "Adhesive Layer / Cured Product" in the "Delamination Interface" column means that delamination occurred at the interface between the adhesive layer and the cured product of the curable resin composition, and "Wafer / Adhesive Layer / Cured Product" means that traces of delamination were observed at both the interface between the wafer and the adhesive layer, and the interface between the adhesive layer and the cured product of the curable resin composition. "Cohesive Failure" means that the adhesive layer was fractured within the layer, and "-" means that the wafer was damaged because delamination was not possible. 《Judgment Criteria》 A: Delamination at the interface between the cured epoxy resin composition δ (orange transparent) and the adhesive composition film (adhesive layer, colorless transparent) deposited on the wafer. C: A delaminated area exists at the interface between the wafer and the adhesive composition film deposited on the wafer. D: The laminated wafer is damaged without delamination, or delamination occurs within the adhesive composition film.

[0171]

[0172] As shown in Table 3, in the laminates prepared using the adhesive composition of the present invention (Examples 2-1 to 2-9), the epoxy resin cured product peeled off at the interface between the epoxy resin cured product and the film (adhesive layer) obtained from the adhesive composition of the present invention.

[0173] The above results indicate that epoxy resin cured on a wafer coated with the adhesive composition of the present invention is easily peeled off. This means that the adhesive composition of the present invention, when used as a temporary adhesive in the molding process, facilitates the separation of the support substrate from the curable resin composition.

[0174] 1. Support substrate 2. Adhesive layer 2a. Adhesive coating layer 3. Semiconductor chip 4. Cured product of curable resin composition (molding resin) 4a. Curable resin composition (molding resin composition) 5. Molded body containing semiconductor chip (molded body) 6. Blade

Claims

1. An adhesive composition for forming the adhesive layer in a laminate comprising: a supporting substrate; a molded body including a semiconductor chip covered with a cured product of a curable resin composition; and an adhesive layer that releasably bonds the supporting substrate and the molded body, wherein the adhesive composition comprises an adhesive component (A) that is cured by hydrosilylation reaction and a release agent component (B), the adhesive component (A) includes SiO ２ represented siloxane unit (Q unit), R １ R ２ R ３ SiO １／２ represented siloxane unit (M unit), R ４ R ５ SiO ２／２ represented siloxane unit (D unit), and R ６ SiO ３／２ represented siloxane unit (T unit), and a polysiloxane (A1) containing a siloxane unit selected from the group consisting of combinations of two or more of these (R １ to R ６ each independently represent a monovalent chemical group that is an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydrogen atom, provided that R １ to R ６ are each bonded to a silicon atom via a Si-C bond or a Si-H bond.), the polysiloxane (A1) comprises polyorganosiloxane (a1) (the polyorganosiloxane (a1) has an alkenyl group having 2 to 10 carbon atoms, and comprises SiO ２ represented siloxane unit (Q' unit), and / or R ６ 'SiO ３／２ represented siloxane unit (T' unit), and R ６ ' represents a monovalent chemical group that is an alkyl group having 1 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms.), the release agent component (B) comprises non-curable polyorganosiloxane (b1), the polyorganosiloxane (b1) has a kinematic viscosity measured at 25°C of 9,000 mm ２ An adhesive composition having a ratio of 0.5 / s or less, wherein the content of the polyorganosiloxane (a1) is less than 72% by mass relative to the nonvolatile components of the adhesive composition, and the content of the polyorganosiloxane (b1) is 1.00% by mass or more relative to the nonvolatile components of the adhesive composition.

2. The polysiloxane (A1) is further a polyorganosiloxane (a2) (the polyorganosiloxane (a2) has Si-H groups and SiO ２ Siloxane units (Q'' units) expressed as R １ "R ２ "R ３ "SiO １／２ Siloxane units (M'' units) expressed as R ４ "R ５ "SiO ２／２ Siloxane units (D'' units) represented by R ６ "SiO ３／２ The siloxane unit (T'' unit) represented by R is included, and the siloxane unit selected from the group consisting of two or more combinations thereof. １ "~R ６ The adhesive composition according to claim 1, comprising (wherein each of these terms independently represents an alkyl group or hydrogen atom having 1 to 10 carbon atoms).

3. The polysiloxane (A1) is further a polyorganosiloxane (a3) ​​(the polyorganosiloxane (a3) ​​is R １ 'R ２ 'R ３ 'SiO １／２ Siloxane units (M' units) represented by R ４ 'R ５ 'SiO ２／２ It contains at least one of the siloxane units (D' units) represented by R １ '~R ５ The adhesive composition according to claim 1, comprising ', each independently representing a monovalent chemical group which is an alkyl group having 1 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms.

4. The adhesive composition according to claim 1, wherein the ratio of the number of vinyl groups to the number of Si-H groups (Vinyl / SiH ratio) in the adhesive composition is 1.00 or less.

5. The adhesive composition according to claim 1, wherein the adhesive component (A) further comprises a platinum group metal catalyst (A2).

6. The adhesive composition according to claim 1, wherein the adhesive component (A) further comprises a polymerization inhibitor (A3).

7. The adhesive composition according to claim 1, wherein the curable resin composition is an epoxy resin composition having an aromatic ring.

8. A laminate comprising a support substrate, a molded body including a semiconductor chip covered with a cured product of a curable resin composition, and an adhesive layer provided between the support substrate and the molded body, wherein the adhesive layer is an adhesive layer formed from the adhesive composition described in any one of claims 1 to 7.

9. A method for manufacturing a laminate, comprising the steps of: applying an adhesive composition according to any one of claims 1 to 7 onto a support substrate to form a coating film; placing a semiconductor chip on the side of the coating film opposite to the support substrate side, and then bonding the coating film and the semiconductor chip together; and, with the coating film and the semiconductor chip bonded together, curing a curable resin composition that covers the semiconductor chip to produce a molded body including the semiconductor chip, wherein the support substrate and the molded body are bonded together via an adhesive layer obtained from the coating film.

10. A method for manufacturing a molded body including a semiconductor chip, comprising the steps of: forming a laminate by the method for manufacturing a laminate described in claim 9; and, after forming the laminate, peeling the support substrate and the molded body apart.

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