Member, and semiconductor manufacturing-related device

Abstract

The present disclosure provides a member that has excellent corrosion resistance, and a semiconductor manufacturing-related device in which the same is used. The present disclosure relates to a member that comes into contact with a corrosive substance, and includes a polypropylene resin in which the isotactic pentad fraction of a propylene homopolymerization section is 96.0% or greater as measured by 13C-NMR.

Description

Member and semiconductor manufacturing-related apparatus

[0001] The present disclosure relates to a member and a semiconductor manufacturing-related apparatus.

[0002] It has been proposed to use polyethylene satisfying predetermined requirements for high-purity chemical containers (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 10-17729

[0004] An object of the present disclosure is to provide a member excellent in corrosion resistance and a semiconductor manufacturing-related apparatus using the same.

[0005] The present disclosure (1) is １３ The member that contains a polypropylene resin in which the isotactic pentad fraction of a propylene homopolymerization part measured by 13C-NMR is 96.0% or more, and is in contact with a corrosive substance.

[0006] In the present disclosure (2), the member is the member according to the present disclosure (1), which is at least one selected from the group consisting of transfer system members, storage device members, container members, valve members, pump members and seal system members.

[0007] In the present disclosure (3), the member is the member according to the present disclosure (1) or (2), which is at least one selected from the group consisting of tubes, pipes, nozzles, joints, tanks, containers, casings, wetted parts of valves, wetted parts of pumps, O-rings, packings, gaskets and washers.

[0008] In the present disclosure (4), the member is a member in any combination with any one of the present disclosures (1) to (3), wherein the member is a member for semiconductor manufacturing-related apparatuses.

[0009] In the present disclosure (5), the member is a member in any combination with any one of the present disclosures (1) to (4), wherein the propylene homopolymerization part of the polypropylene resin is 85 mol% or more.

[0010] In the present disclosure (6), the member is the member according to the present disclosure (5), wherein the propylene homopolymerization part of the polypropylene resin is 95 mol% or more.

[0011] Disclosure (7) is a component in any combination of any of Disclosures (1) to (6) wherein the melting point of the polypropylene resin is 160°C or higher.

[0012] This disclosure (8) states that the weight-average molecular weight of the polypropylene resin is 2.0 × 10 ５ The component is any combination of any of the above (1) to (7) of the present disclosure.

[0013] This disclosure (9) states that the weight-average molecular weight of the polypropylene resin is 2.6 × 10 ５ The above 5.0 x 10 ５ The component described in (8) of this disclosure is as follows:

[0014] Disclosure (10) is a component in which any combination of the polypropylene resin and any of Disclosures (1) to (9) is such that the ratio of weight-average molecular weight to number-average molecular weight is 3.5 or more and 4.0 or less.

[0015] Disclosure (11) is a component in any combination of any of Disclosures (1) to (10) wherein the polypropylene resin contains less than 5% by mass of components with a weight-average molecular weight of 10,000 or less.

[0016] The present disclosure (12) is a member in any combination of any of the present disclosures (1) to (11) in which the total metal content of 17 elements (Li, Na, Mg, Al, K, Ca, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd, Ba, Pb) when the member is ashed is 200 ppm or less.

[0017] The present disclosure (13) is a component in any combination of any of the present disclosures (1) to (12) in which the total amount of metal leaching of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) when a test piece of the component (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week is 20 ppb or less.

[0018] The present disclosure (14) is a component in any combination of any of the present disclosures (1) to (13), wherein the pH of the corrosive substance is 6 or less or 8 or more.

[0019] The present disclosure (15) provides a member in any combination with any one of the above-described present disclosure (1) to (14), wherein the redox potential (vs NHE) of the corrosive substance is from -2.0 V to 3.0 V.

[0020] The present disclosure (16) provides a member in any combination with any one of the above-described present disclosure (1) to (15), wherein the corrosive substance is a fluid.

[0021] The present disclosure (17) provides a member in any combination with any one of the above-described present disclosure (1) to (16), wherein the corrosive substance is at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances and organic solvents.

[0022] The present disclosure (18) provides the member according to the present disclosure (17), wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide water and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide water and sulfuric acid.

[0023] The present disclosure (19) provides the member according to the present disclosure (17), wherein the basic substance is TMAH ([(CH ３ ) ４ N] ＋ [OH] － ), ammonia water, an aqueous sodium hydroxide solution, and a mixed chemical solution of hydrogen peroxide water and ammonia water, which is at least one selected from the group consisting of the above.

[0024] The present disclosure (20) provides the member according to the present disclosure (17), wherein the organic solvent is isopropyl alcohol.

[0025] The present disclosure (21) provides a member in any combination with any one of the above-described present disclosure (1) to (20), wherein when a test piece of the member (size: 10 mm × 50 mm × 2 mm) is immersed in each of the following 10 chemical solutions for one week, and the relative value of the mass after immersion, with the mass before immersion being 100, is calculated respectively, the standard deviation is 1.5 or less. (Chemical solution) 25% by mass TMAH ([(CH ３ ) ４ N] ＋ [OH] －) (80°C) 98% by mass sulfuric acid (90°C) 100% by mass isopropyl alcohol (80°C) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:5) (20°C) Mixed acid of hydrofluoric acid and nitric acid (mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) SPM (mixture of 98% by mass sulfuric acid and 30-36% by mass hydrogen peroxide in a volume ratio of 2:1) (80°C) SC1 (mixture of 25-28% by mass ammonia water, 30-36% by mass hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) SC2 (a mixture of 35-37% hydrochloric acid, 30-36% hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) 85% phosphoric acid (80°C)

[0026] This disclosure (22) １３ This is a semiconductor manufacturing-related apparatus equipped with a component containing polypropylene resin in which the isotactic pentad fraction of the propylene homopolymer, as measured by C-NMR, is 96.0% or higher.

[0027] This disclosure (23) is a semiconductor manufacturing apparatus as described in this disclosure (22) in which corrosive substances are used within the apparatus.

[0028] The present disclosure (24) is a semiconductor manufacturing-related apparatus according to the present disclosure (22) or (23), wherein a corrosive substance is used in the apparatus and the corrosive substance comes into contact with the component.

[0029] According to this disclosure, it is possible to provide a component with excellent corrosion resistance and semiconductor manufacturing-related equipment using the same.

[0030] The inventors of this invention, １３ We have discovered that polypropylene resins in which the isotactic pentad fraction of the propylene homopolymer, as measured by C-NMR, is within a specific range exhibit excellent corrosion resistance and heat resistance, and have completed the components of this disclosure and semiconductor manufacturing-related equipment using them.

[0031] The following provides a detailed explanation of this disclosure.

[0032] This disclosure is, １３This invention relates to a component that comes into contact with corrosive substances, comprising a polypropylene resin in which the isotactic pentad fraction of the propylene homopolymer, as measured by 13C-NMR, is 96.0% or higher. The component of this disclosure has excellent corrosion resistance (particularly chemical resistance).

[0033] The components of this disclosure also have excellent heat resistance and can suppress metal leaching.

[0034] The components of this disclosure are １３ This product contains a polypropylene resin in which the isotactic pentad fraction of the propylene homopolymer, as measured by C-NMR, is 96.0% or higher.

[0035] The above-mentioned polypropylene resin (PP) may be a propylene homopolymer, a copolymer of propylene and another monomer, or a hydrogenated product of these polymers. Two or more propylene resins (for example, a propylene homopolymer and a propylene copolymer) may be used in combination as the above-mentioned polypropylene resin.

[0036] Other monomers copolymerized with propylene include α-olefins and non-conjugated dienes, which can be used individually or in combination of two or more.

[0037] Examples of the above-mentioned α-olefins include α-olefins having 2 or 4 to 20 carbon atoms. More specifically, examples include ethylene, 1-butene, 2-methyl-1-propene, 2-methyl-1-butene, 3-methyl-1-butene, 1-pentene, 1-hexene, 2-ethyl-1-butene, 2,3-dimethyl-1-butene, 2-methyl-1-pentene, 3-methyl-1-pentene, 4-methyl-1-pentene, 3,3-dimethyl-1-butene, 1-heptene, methyl-1-hexene, dimethyl-1-pentene, ethyl-1-pentene, trimethyl-1-butene, methylethyl-1-butene, 1-octene, methyl-1-pentene, ethyl-1-hexene, dimethyl-1-hexene, propyl-1-heptene, methylethyl-1-heptene, trimethyl-1-pentene, propyl-1-pentene, diethyl-1-butene, 1-nonene, 1-decene, 1-undecene, 1-dodecene, etc.

[0038] The non-conjugated diene mentioned above is given by the following formula (A): CH ２ =CR １Ａ - (CH ２ ) ｎ -CR ２Ａ =CR ３Ａ R ４Ａ (In the formula, R １Ａ , R ２Ａ , R ３Ａ , and R ４Ａ Examples of compounds represented by ) are, where each is independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and n is an integer from 1 to 20.

[0039] R １Ａ , R ２Ａ , R ３Ａ , and R ４Ａ The alkyl group having 1 to 6 carbon atoms may be linear or branched. Specific examples of the alkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, s-butyl, t-butyl, n-pentyl, isopentyl, t-pentyl, neopentyl, n-hexyl, and isohexyl groups.

[0040] When the above-mentioned polypropylene resin is a copolymer, it may be either a random copolymer or a block copolymer. The content of propylene-derived skeletons in the random copolymer is usually 90 to 99 mol%, preferably 92 to 98 mol%. The content of propylene-derived skeletons in the block copolymer is usually 70 to 99 mol%, preferably 75 to 98 mol%.

[0041] The above-mentioned polypropylene resin is preferably a crystalline polypropylene resin.

[0042] The above polypropylene resin may also be a propylene-based block copolymer containing a crystalline propylene polymer portion and a propylene-ethylene random copolymer portion. Such a propylene-based block copolymer is a reaction mixture of a crystalline propylene polymer portion and a propylene-ethylene random copolymer portion, and is obtained by a manufacturing process consisting of polymerization of the crystalline propylene polymer portion, which is a propylene homopolymer portion (first stage), followed by polymerization of the propylene-ethylene random copolymer portion (second stage). The above crystalline propylene polymer is produced in one or more polymerization steps (the reaction conditions for each step are the same or different), and the propylene-ethylene random copolymer portion is also produced in one or more polymerization steps (the reaction conditions for each step are the same or different). Therefore, the entire manufacturing process of the above propylene-based block copolymer consists of at least two sequential multi-stage polymerization steps.

[0043] In the above polypropylene resin, １３ The isotactic pentad fraction (mmmm fraction) of the propylene homopolymer, as measured by C-NMR, is 96.0% or higher. Preferably, the mmmm fraction is 96.5% or higher, more preferably 97.0% or higher, and even more preferably 98.0% or higher. Within this range, a component with excellent heat resistance can be obtained. In addition, the flexural modulus and corrosion resistance of the component tend to be good. Furthermore, preferably, the mmmm fraction is 99.5% or lower, and more preferably 99.0% or lower.

[0044] Here, the isotactic pentad fraction (mmmm fraction) is the method described by A. Zambelli et al. in Macromolecules, Vol. 6, 925 (1973), i.e. １３ This is the isotactic fraction of a pentad unit in a polypropylene molecular chain, measured by 13C-NMR (nuclear magnetic resonance), and represents the fraction of a propylene monomer unit in which five propylene units are isotactically linked.

[0045] １３ The assignment of peaks in the 1C-NMR spectrum is based on the description in Macromolecules, Vol. 8, 687 (1975).１３ ¹³C-NMR can be measured using a Fourier transform NMR [500 MHz (for hydrogen nucleus measurement)] instrument, with the signal detection limit improved to 0.001 by performing 20,000 integrated measurements at a frequency of 125 MHz.

[0046] Polypropylene resin with a mmmm fraction of 96.0% or higher can be manufactured by conventionally known methods, for example, by the methods disclosed in Examples 1 and 2 of Japanese Patent Application Publication No. 8-325327.

[0047] The above polypropylene resin may have a long-chain branched structure. Having a long-chain branched structure improves melt properties. The above long-chain branched structure can be evaluated, for example, by the degree of strain hardening (λmax) in the measurement of extensional viscosity, and the greater the amount of branching and the longer the length of the branching, the greater the degree of strain hardening. The above degree of strain hardening is preferably 6.0 or higher, more preferably 7.0 or higher, even more preferably 8.0 or higher, and even more preferably 9.0 or higher. Regarding the method for measuring the degree of strain hardening, any method that can measure uniaxial extensional viscosity will, in principle, yield the same value. For example, the measurement method and measuring equipment described in Polymer 42 (2001) 8663 can be used.

[0048] The above polypropylene resin preferably contains 85 mol% or more of propylene homopolymer. Preferably, the propylene homopolymer is 90 mol% or more, more preferably 95 mol% or more, and even more preferably 99 mol% or more. There is no particular upper limit, but it may be 100 mol% or less. The content of the propylene homopolymer can be determined by the following method. １３ It can be calculated by the ratio of the peak attributable to the α-methyl group of propylene to the peak attributable to the copolymer monomer using 13C-NMR (nuclear magnetic resonance) measurement.

[0049] The above polypropylene resin preferably has a melting point of 160°C or higher. Preferably, the melting point is 161°C or higher, more preferably 162°C or higher, even more preferably 163°C or higher, even more preferably 165°C or higher, and also preferably 190°C or lower, more preferably 180°C or lower, and even more preferably 170°C or lower. The above melting point is the temperature corresponding to the maximum value in the heat of fusion curve when the temperature is increased at a rate of 10°C / min using a differential scanning calorimetry (DSC) device.

[0050] The above polypropylene resin has a weight-average molecular weight (Mw) of 2.0 × 10 ５ Preferably, the above. The weight-average molecular weight is 2.2 × 10⁻⁶. ５ Preferably, it is 2.4 × 10 ５ It is more preferable that the above be the case, 2.6 × 10 ５ It is even more preferable that the above be the case, 3.0 × 10 ５ It is even more preferable that the above is true, and also 1.0 × 10 ６ Preferably, it is 5.0 × 10 ５ The following is more preferable. The above weight-average molecular weight is measured on a polystyrene basis by gel permeation chromatography (GPC, column temperature: 140°C, eluent: 1,2,4-trichlorobenzene).

[0051] The above polypropylene resin preferably has a number average molecular weight (Mn) of 30,000 or more, more preferably 40,000 or more, even more preferably 50,000 or more, even more preferably 60,000 or more, even more preferably 70,000 or more, even more preferably 80,000 or more, and also preferably 300,000 or less, more preferably 200,000 or less, and even more preferably 150,000 or less. The above number average molecular weight is measured by polystyrene equivalent using gel permeation chromatography (GPC, column temperature: 140°C, eluent: 1,2,4-trichlorobenzene).

[0052] In the above-mentioned polypropylene resin, the ratio of weight-average molecular weight (Mw) to number-average molecular weight (Mn) is preferably 2.0 or higher, more preferably 3.0 or higher, even more preferably 3.5 or higher, and also preferably 7.0 or lower, more preferably 5.0 or lower, and even more preferably 4.0 or lower.

[0053] The above polypropylene resin preferably contains less than 5% by mass of components with a weight-average molecular weight of 10,000 or less. The content of components with a weight-average molecular weight of 10,000 or less is preferably 4.6% by mass or less, more preferably 4.3% by mass or less, even more preferably 4.0% by mass or less, and may be 0.0% by mass or more, 1.0% by mass or more, or 2.0% by mass or more. Within the above range, particle generation can be suppressed, and the resin can be suitably used in applications where particle generation is undesirable, such as semiconductor manufacturing equipment. The content of components with a weight-average molecular weight of 10,000 or less can be determined by the following method. The content of components with a weight-average molecular weight of 10,000 or less is determined from the integrated curve of gel permeation chromatography (GPC, column temperature: 140°C, eluent: 1,2,4-trichlorobenzene).

[0054] The above polypropylene resin may be subjected to a treatment to reduce the content of components with a weight-average molecular weight of 10,000 or less, or it may not be subjected to such a treatment. In order to reduce the content of components with a weight-average molecular weight of 10,000 or less, it is preferable to use a polypropylene resin with a relatively high molecular weight.

[0055] The melt flow rate (MFR) of the above polypropylene resin is not particularly limited, but in terms of the appearance of the resulting molded article, when used in blow molding, the MFR is preferably 0.03 g / 10 min or more, more preferably 0.1 g / 10 min or more, even more preferably 0.2 g / 10 min or more, and also preferably 3 g / 10 min or less, more preferably 2 g / 10 min or less, even more preferably 1.5 g / 10 min or less, even more preferably 1 g / 10 min or less, and particularly preferably 0.5 g / 10 min or less.

[0056] When the above polypropylene resin is used in extrusion molding, it is preferable that the MFR is 0.01 g / 10 min or more, more preferably 0.1 g / 10 min or more, more preferably 5 g / 10 min or less, more preferably 4.5 g / 10 min or less, and even more preferably 4 g / 10 min or less.

[0057] When the above polypropylene resin is used in injection molding, it is preferable that the MFR is 1 g / 10 min or more, more preferably 3 g / 10 min or more, even more preferably 5 g / 10 min or more, particularly preferably 10 g / 10 min or more, and also preferably 300 g / 10 min or less, more preferably 200 g / 10 min or less, even more preferably 100 g / 10 min or less, even more preferably 90 g / 10 min or less, and particularly preferably 80 g / 10 min or less.

[0058] The MFR of the above-mentioned polypropylene resin is measured in accordance with JIS K7210 at 230°C and under a load of 21.18 N (2.16 kg). The above-mentioned polypropylene resin may be a mixture of two or more polypropylene resins with different MFRs.

[0059] The above-mentioned polypropylene resin may contain reinforcing fibers. Examples of the reinforcing fibers include glass fibers, carbon fibers, carbon nanotubes, silica fibers, basic magnesium sulfate fibers (magnesium oxysulfate fibers), potassium titanate fibers, aluminum borate fibers, calcium silicate fibers, calcium carbonate fibers, silicon carbide fibers, wollastonite, xonotlite, metal (stainless steel, aluminum, titanium, copper, etc.) fibers, natural fibers (cotton, cellulose, silk, wool, and hemp, etc.), regenerated fibers (rayon and cupro, etc.), semi-synthetic fibers (acetate and promix, etc.), synthetic fibers (polyester, polyacrylonitrile, polyamide, aramid, and polyolefin, etc.), and modified fibers obtained by chemically modifying the surface and ends thereof. Among these, glass fibers are preferred.

[0060] Chopped strands are preferred as the form of the reinforcing fibers. Chopped strands typically have a length of 1 to 10 mm and a fiber diameter of 5 to 20 μm, preferably 1.5 to 6 mm in length and 8 to 14 μm in fiber diameter. As another form, continuous fiber bundles can also be used. Continuous fiber bundles are commercially available, for example, as rovings. Their fiber diameter is typically 5 to 30 μm, preferably 13 to 20 μm.

[0061] The content of the reinforcing fibers is preferably 10 parts by mass or more, more preferably 20 parts by mass or more, and preferably 50 parts by mass or less, and more preferably 40 parts by mass or less, based on 100 parts by mass of the total of the polypropylene resin and reinforcing fibers.

[0062] The components of this disclosure may include resins other than polypropylene resin. Examples of resins other than polypropylene resin include at least one selected from the group consisting of polyolefin resins other than polypropylene resin, thermoplastic resins, and chlorine-based resins.

[0063] The components of this disclosure may contain other components as needed. These components include various known additives such as antioxidants, stabilizers, antistatic agents, lubricants, mold release agents, ultraviolet absorbers, dyes and pigments, reinforcing materials (e.g., glass fiber fillers, carbon fiber fillers), drip inhibitors, fillers, flame retardants, and elastomers for improving impact resistance.

[0064] Using antioxidants as other components is one preferred embodiment. Examples of antioxidants include amine-based antioxidants and phenol-based antioxidants as primary antioxidants, and one or more of these can be used. Examples of secondary antioxidants include sulfur-based antioxidants and phosphorus-based antioxidants. The use of primary and secondary antioxidants in combination is preferred, and a combination of phenol-based and phosphorus-based antioxidants is particularly preferred.

[0065] The antioxidant content is preferably 0 parts by mass or more, more preferably 0.1 parts by mass or more, particularly preferably 0.2 parts by mass or more, and preferably 5 parts by mass or less, and particularly preferably 3 parts by mass or less, based on 100 parts by mass of the total amount of polypropylene resin and resins other than polypropylene resin. A content exceeding 5 parts by mass is undesirable because it causes bleeding.

[0066] The other components mentioned above can be added insofar as they do not impair the effects of the present disclosure. The content of the other components is preferably 20 parts by mass or less, more preferably 10 parts by mass or less, even more preferably 5 parts by mass or less, and even more preferably 3 parts by mass or less, and may be 0.01 parts by mass or more, based on 100 parts by mass of the total amount of polypropylene resin and resins other than polypropylene resin.

[0067] In the above-mentioned component, the polypropylene resin content is preferably 50% by mass or more, more preferably 60% by mass or more, even more preferably 70% by mass or more, even more preferably 80% by mass or more, even more preferably 90% by mass or more, and even more preferably 95% by mass or more. It is also preferable that the polypropylene resin content is 100% by mass, that is, that the above-mentioned component consists only of polypropylene resin.

[0068] The components of this disclosure come into contact with corrosive substances. Part of the component may come into contact with the corrosive substance, or the entire component may come into contact with the corrosive substance.

[0069] The corrosive substance mentioned above may be any substance that is corrosive, and may be a substance that is corrosive to rubber, resin, metal, etc. Furthermore, the corrosive substance may be a liquid, solid, or gas. In terms of exhibiting the effects of this disclosure more significantly, it is preferable that it be a fluid, and more preferably a liquid.

[0070] Furthermore, it is preferable that the corrosive substance is one that has been used in the treatment of objects to be treated with the corrosive substance. Examples of such corrosive substances include chemical solutions used in chemical treatment, which may be chemical solutions recovered after treatment, or they may be waste liquids.

[0071] The above-mentioned corrosive substance has an oxidation-reduction potential (vsNHE) of preferably -2.0V or higher, more preferably -1.0V or higher, even more preferably -0.5V or higher, and also preferably 3.0V or lower, more preferably 2.5V or lower, and even more preferably 2.1V or lower.

[0072] Examples of the corrosive substances mentioned above include acidic substances, basic substances, oxidizing substances, organic solvents, and saltwater.

[0073] Examples of the above-mentioned acidic substance include chemical solutions with a pH of 6 or less, preferably 5 or less, and more preferably 4 or less. The lower limit of the above pH is not particularly limited and may be 0. Specific examples of the above-mentioned acidic substance include acids such as sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, and hydrochloric acid; mixtures of these acids; and mixtures of these acids with other substances (such as hydrogen peroxide). Among these, at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, mixed acids of hydrofluoric acid and nitric acid, mixed chemical solutions of hydrogen peroxide solution and hydrochloric acid, and mixed chemical solutions of hydrogen peroxide solution and sulfuric acid is preferred, and at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, mixed acids of hydrofluoric acid and nitric acid, mixed chemical solutions of hydrogen peroxide solution and hydrochloric acid, and mixed chemical solutions of hydrogen peroxide solution and sulfuric acid is more preferred.

[0074] Examples of the basic substance include chemical solutions with a pH of 8 or higher, preferably 9 or higher, and more preferably 10 or higher. The upper limit of the pH is not particularly limited and may be 14. Specifically, examples of the basic substance include TMAH([(CH ３ ) ４ N] ＋ [OH] － Examples include bases such as sodium hydroxide aqueous solution and ammonia; mixtures of these bases; and mixtures of these bases with other substances (such as hydrogen peroxide). In particular, TMAH ([(CH ３ ) ４ N] ＋ [OH] － Preferably, at least one selected from the group consisting of ammonia water, sodium hydroxide aqueous solution, and a mixed chemical solution of hydrogen peroxide and ammonia water.

[0075] Examples of basic substances include chemical solutions with an oxidation-reduction potential (vsNHE) of -2.0 to 0V, preferably -1.0 to 0V, and more preferably -0.5 to 0V. Specifically, TMAH([(CH ３ ) ４ N] ＋ [OH] － Examples include basic substances such as sodium hydroxide aqueous solution, ammonia water, hydroxylamine, hydrazine, hydrogen water, and sodium sulfite; and mixtures of these basic substances with other substances. In particular, TMAH ([(CH ３ ) ４ N] ＋ [OH] － Preferably, at least one selected from the group consisting of ammonia water, sodium hydroxide aqueous solution, and a mixed chemical solution of hydrogen peroxide and ammonia water.

[0076] Examples of the above-mentioned oxidizing substances include chemical solutions with an oxidation-reduction potential (vsNHE) of 0 to 3.0 V, preferably 0.5 to 2.5 V, and more preferably 1.0 to 2.1 V. Specifically, examples include sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide; and mixtures of these oxidizing substances with other substances (such as hydrofluoric acid). Among these, at least one selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is preferred, and at least one selected from the group consisting of nitric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is more preferred.

[0077] Examples of the above organic solvents include esters such as methyl acetate, ethyl acetate, propyl acetate, n-butyl acetate, and tert-butyl acetate; ketones such as acetone, methyl ethyl ketone, and cyclohexanone; aliphatic hydrocarbons such as hexane, cyclohexane, octane, nonane, decane, undecane, dodecane, and mineral spirits; aromatic hydrocarbons such as benzene, toluene, xylene, naphthalene, and solvent naphtha; alcohols such as methanol, ethanol, isopropyl alcohol, tert-butanol, and ethylene glycol monoalkyl ethers; cyclic ethers such as tetrahydrofuran, tetrahydropyran, and dioxane; nitriles such as acetonitrile and propionitrile; amides such as dimethyl sulfoxide, N,N-dimethylformamide, and N,N-dimethylacetamide; halogenated hydrocarbons such as dichloromethane, dichloroethane, and chloroform, and mixtures thereof. Among these, alcohols are preferred, and isopropyl alcohol is more preferred.

[0078] The corrosive substance is preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents, and brine; more preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, and organic solvents; and even more preferably at least one selected from the group consisting of acidic substances and basic substances.

[0079] The corrosive substance may also preferably be at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, ammonia water, a mixed chemical solution of hydrogen peroxide and ammonia water, isopropyl alcohol, and brine. More preferably, at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, a mixed chemical solution of hydrogen peroxide and ammonia water, and isopropyl alcohol is preferred. Even more preferably, at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, and TMAH is preferred.

[0080] The member of this disclosure may have only the portion (layer) containing the polypropylene resin, or it may have both the portion (layer) containing the polypropylene resin and the other portion (layer). From the viewpoint of ensuring corrosion resistance, it is preferable that at least a portion of the surface that comes into contact with the corrosive substance is composed of the portion (layer) containing the polypropylene resin, and it is more preferable that the entire surface that comes into contact with the corrosive substance is composed of the portion (layer) containing the polypropylene resin.

[0081] The components of this disclosure are preferably used as at least one component selected from the group consisting of, for example, components for building materials, components for mobility, components for aerospace, components for medical use, components for semiconductors, and components for information and communication. Semiconductor components are preferred as the above components due to their excellent corrosion resistance and low metal leaching, components for semiconductor manufacturing equipment are more preferred, and components that come into contact with corrosive substances after being used in treatment with corrosive substances in semiconductor manufacturing equipment are even more preferred. In this specification, semiconductor manufacturing equipment means semiconductor manufacturing equipment and related equipment. Related equipment for semiconductor manufacturing equipment includes equipment used in semiconductor manufacturing but not mounted on the semiconductor manufacturing equipment.

[0082] The above-mentioned building materials (building interior materials) include building interior materials such as baseboards, ceiling materials, and plumbing materials, as well as building exterior materials such as waterproofing sheets, water-stopping materials, exterior wall materials, and roofing materials. The above-mentioned mobility materials include parts used in ferries, railways, automobiles, motorcycles, drones, robots, etc. The above-mentioned aerospace materials include exterior and interior materials for aircraft and rockets, wire insulation materials, cable protection materials, jet engines, cabin interior materials, and their components. The above-mentioned medical materials include piping materials, chemical containers, sterilization containers, medical devices, experimental and analytical instruments, and packaging materials. The above-mentioned semiconductor materials include process materials used in semiconductor manufacturing and parts for semiconductor manufacturing-related equipment. The above-mentioned information and communication materials include parts for devices such as wireless LAN transmitting and receiving circuits, circuit boards, and parts for optical communication devices.

[0083] Examples of semiconductor components include transfer system components such as tubes, pipes, nozzles, and fittings; storage device components such as tanks; container components such as containers; valve components such as the wetted parts of valves; pump components such as the wetted parts of pumps; sealing components such as O-rings, packings, gaskets, and washers; and nuts, bolts, films, bottles, wire insulation, hoses, pipes, sheets, rollers, cocks, connectors, spin chucks, filter housings, filter cages, flow meters, wafer carriers, wafer boxes, and the like.

[0084] The components of this disclosure are preferably at least one selected from the group consisting of transfer system components, storage device components, container components, valve components, pump components, and sealing system components, given that corrosion resistance is required. More preferably, they are at least one selected from the group consisting of tubes, pipes, nozzles, fittings, tanks, containers, housings, wetted parts of valves, wetted parts of pumps, O-rings, packings, gaskets, and washers.

[0085] While there are no particular limitations on the type of tube, a tube diameter of 2 mm to 400 mm is preferred, and a material with stress crack resistance, chemical resistance, excellent mechanical strength, and cleanliness (minimal contamination of the chemical solution by extracted ions) is used. Depending on the chemical solution being circulated, such as organic solvents, antistatic properties may be required to prevent electrostatic charge buildup. In such cases, conductive fillers (carbon black, carbon nanotubes, etc.) may be added to provide antistatic properties, to the extent that cleanliness is not compromised.

[0086] While there are no particular limitations on the type of piping, a preferred shape is an inner diameter of 2 mm to 400 mm. Examples include robust pipe types, flexible hoses that can be incorporated to fit the installation space, and bellows pipes that are large in diameter but can be bent. Furthermore, the inside of the piping should be made of a material that is clean (less contamination of the chemical solution by extracted ions) and chemical resistant, and may be subjected to high-precision polishing that does not generate dust and does not disturb the liquid or gas flow. Depending on the chemical solution being flowed, such as organic solvents, antistatic properties may be required to prevent static electricity buildup. In such cases, conductive fillers (carbon black, carbon nanotubes, etc.) may be added to provide antistatic properties within a range that does not impair cleanliness.

[0087] While there are no particular limitations on the nozzle itself, the tip may be precisely machined to match the size and shape of the part. In addition, since it comes into contact with the part, it can be made of a highly hard and durable material that is resistant to friction and bending.

[0088] The fittings and valves are not particularly limited, but they are required to be oil-free, particle-free, dead space-free, and externally leak-free, and their size is preferably in the range of Φ3.2 mm to 40 mm.

[0089] The tanks and containers are not particularly limited, but they may be subjected to precision cleaning (water washing, acetic acid immersion, wiping, pure water washing, etc.) to remove dirt and residue. Packaging after cleaning may be carried out in a cleanroom or clean booth environment.

[0090] While there are no particular limitations on the housing, liquid-repellent properties are sometimes required to suppress the adhesion of splashed chemicals during rotary dispensing.

[0091] While not particularly limited, a pump may sometimes require retractability.

[0092] While there are no particular limitations on O-rings, the material properties that are often required include excellent elasticity, good compression set, high wear resistance, excellent heat resistance, and resistance to the liquids and gases to which they are applied, as well as a long lifespan. In particular, O-rings used in semiconductor manufacturing equipment are used in harsh chemical environments, such as being exposed to various plasmas, and therefore high heat resistance, chemical resistance, and plasma resistance are often required.

[0093] While not particularly limited, packings and gaskets are often required to have good compression set, a low coefficient of friction, and excellent wear resistance. To prevent leaks, heat resistance, cold resistance, pressure resistance, and chemical resistance may also be required.

[0094] While washers are not particularly limited, they are often intended for use in cleanrooms and similar environments, requiring durability, corrosion resistance, and rust prevention.

[0095] While not particularly limited, spin chucks may require hardness, corrosion resistance, and dimensional stability, and conductivity may be added.

[0096] The components of this disclosure can be used, for example, for the following purposes: <Building Materials> Interior building materials such as furniture exterior materials, walls, ceilings, and floors; exterior building materials such as siding, fences, roofs, gates, and gable boards; surface decorative materials such as window frames, doors, handrails, sills, and lintels; membrane materials for membrane structures (sports facilities, garden facilities, atriums, etc.) (roofing materials, ceiling materials, exterior wall materials, interior wall materials, covering materials, etc.); outdoor board materials (soundproof walls, windbreak fences, wave overhang fences, garage canopies, shopping malls, walkway walls, roofing materials); tent materials for tent warehouses, sunshade membrane materials, partial roofing materials for letting in light, window materials to replace glass, fire-resistant partition membrane materials, curtains, exterior wall reinforcement, waterproof membranes, smoke-proof membranes, non-combustible transparent partitions, road reinforcement, etc.; agricultural films, weather-resistant covers for various roofing materials and side walls; covering materials for glass such as non-combustible fire-resistant safety glass; etc. Among these, given the requirement for corrosion resistance, it is particularly suitable for use in membrane materials for membrane structures, outdoor paneling, tent materials for tent warehouses, sunshade membranes, partial roofing materials for letting in light, window materials as an alternative to glass, fire-resistant partition membranes, curtains, exterior wall reinforcement, waterproof membranes, smoke-proof membranes, non-combustible transparent partitions, road reinforcement and other building materials, agricultural films, and weather-resistant covers for various roofing materials and side walls.

[0097] <Mobility> O-rings, tubes, packings, valve cores, hoses, seals, and diaphragms used in the fuel systems and peripheral equipment of automobiles (e.g., injector O-rings, injector packings, fuel pump O-rings, diaphragms, fuel hoses, filler hoses, evaporator hoses) (these may be for sour gasoline, alcohol fuel, or fuels containing gasoline additives such as methyl tert-butyl ether and amines); hoses and seals used in the automatic transmission systems of automobiles (e.g., ATF hoses); gaskets, shaft seals, valve stem seals, seals, and hoses used in the engines and peripheral equipment of automobiles (e.g., carburetor flange gaskets, engine head gaskets, metal gaskets, crankshaft seals, camshaft seals, valve stem seals, manifold packings, oil hoses); oxygen sensors for automobile engines; Other automotive components such as brake hoses, air conditioning hoses, radiator hoses, radiator tanks, chemical tanks, bellows, spacers, rollers, gasoline tanks, bumpers, door trims, instrument panels, and wire insulation materials; O-rings, tubes, gaskets, valve cores, hoses, seals, and diaphragms used in the fuel systems and peripheral equipment of ships; corrosion-resistant tapes for piping, such as tapes wrapped around piping on ship decks; etc. Among these, it is particularly suitable for use in tubes, valve cores, hoses, and diaphragms used in the fuel systems and peripheral equipment of automobiles, other automotive components such as brake hoses, air conditioning hoses, radiator hoses, radiator tanks, chemical tanks, bellows, spacers, rollers, gasoline tanks, bumpers, door trims, instrument panels, and wire insulation materials, hoses used in the AT systems of automobiles, and tubes, valve cores, hoses, and diaphragms used in the fuel systems and peripheral equipment of ships, given the requirement for corrosion resistance.

[0098] <Aerospace> O-rings, tubes, packings, valve cores, hoses, seals, diaphragms, etc., used in the fuel systems and peripheral equipment of aircraft and rockets. Among these, tubes, valve cores, hoses, and diaphragms used in the fuel systems and peripheral equipment of aircraft and rockets are particularly suitable due to the requirement of corrosion resistance.

[0099] <Medical> Piping materials such as medical infusion tubes, blood collection tubes, drain tubes, catheters, catheter connectors, stents, pipes, fittings, tube connectors, valves, filters, etc.; liquid, powder, or solid drug containers such as packaging, bottles, bottle caps, vials, ampoules, pre-filled syringes, infusion bags, infusion bag connectors, sealed drug bags, press-through packages, eye drop containers, etc.; sample containers such as urine collection bags, blood sampling test tubes, blood collection tubes, test cells, specimen containers, etc.; sterilization containers for medical instruments such as scalpels, forceps, gauze, and contact lenses; housings for electronic devices such as medical sensors, cardiac devices, and pacemakers; medical devices such as inhalation masks, syringes, syringe rods, injection needles, surgical trays, protective stoppers, rubber stoppers, and endoscopes; laboratory and analytical instruments such as beakers, petri dishes, flasks, test tubes, and centrifuge tubes; medical optical components such as plastic lenses for medical examinations; Artificial organs and their components such as denture bases, dentures, artificial hearts, artificial tooth roots, artificial bones, and artificial joints; etc. Among these, from the viewpoint of chemical resistance and heat resistance, it can be used particularly suitably for blood collection tubes, drain tubes, piping, fittings, tube connectors, valves, filters, bottles, bottle caps, connecting parts for infusion bags, sample containers such as test tubes for blood testing, blood collection tubes, test cells, and specimen containers, sterile containers, syringes, syringe rods, surgical trays, and protective plugs.

[0100] <Information and Communication> Insulating boards for high-frequency circuits, insulating materials for connecting components, printed circuit boards; bases and antenna covers for high-frequency vacuum tubes; wire coverings for coaxial cables, LAN cables, etc.; optical fiber coverings; displays such as liquid crystal displays; components for mobile phones; etc. Among these, due to the requirement of corrosion resistance, it can be used particularly suitably for insulating boards for high-frequency circuits, insulating materials for connecting components, printed circuit boards, bases and antenna covers for high-frequency vacuum tubes, wire coverings for coaxial cables, LAN cables, etc., and optical fiber coverings.

[0101] <Semiconductors> Chemical transfer components such as chemical tanks, containers, housings, piping, O-rings, tubes, packings, valve cores, hoses, sealing materials, rolls, gaskets, washers, diaphragms, nozzles, fittings, coatings, and inner linings for piping in semiconductor factories and semiconductor manufacturing-related equipment; chemical stoppers and packaging films for chemicals; waste liquid transport components such as tanks, containers, piping, fittings, nozzles, tubes, and hoses for waste liquid transport; high-temperature liquid transport components such as tanks, containers, piping, fittings, nozzles, tubes, and hoses for high-temperature liquid transport; steam piping components such as tubes and hoses for steam piping; etc. Among these, from the viewpoint of chemical resistance and heat resistance, it can be suitably used as chemical transfer components such as chemical tanks, containers, housings, piping, O-rings, tubes, packings, valve cores, hoses, sealing materials, gaskets, washers, diaphragms, nozzles, and fittings in semiconductor manufacturing-related equipment, and as waste liquid transport components such as containers, piping tubes, and hoses for waste liquid transport.

[0102] The semiconductor manufacturing equipment mentioned above includes photolithography equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, discam equipment), thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect correction equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching equipment Equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high-current ion implantation equipment, medium-current ion implantation equipment, high-energy ion implantation equipment), thin film deposition equipment, CVD equipment (high-pressure CVD equipment, SACVD, reduced-pressure CVD, plasma CVD equipment, metal CVD equipment, mist CVD equipment, ALD equipment), sputtering equipment, and other thin film deposition equipment (vacuum deposition equipment, silicon epitaxial growth equipment) Examples include compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment, inspection and evaluation equipment (Auger electron spectrometer), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machine, bump plating equipment, back grinder tape application machine, back grinder, back grinder tape peeling machine), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonding equipment, outer lead bonding equipment, flip-chip bonding equipment), packaging equipment (molding equipment, deburring equipment, soldering equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (provider), handler, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (cold and heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing system, various life testing equipment).Related equipment for semiconductor manufacturing includes various transport devices (in-process wafer transport devices, inter-process wafer transport devices, stockers), pure water and chemical solution equipment (pure water production devices, ultrafiltration devices, reverse osmosis devices, sterilization devices, chemical supply devices, slurry supply devices, chemical purification devices, wastewater treatment devices), various gas equipment (gas generators, gas purification devices, gas mixing devices, gas detection devices, exhaust gas treatment devices), cleanroom equipment (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying devices, flow control equipment, various taping devices, various packaging devices, measuring instruments for liquids and various gases).

[0103] In particular, semiconductor manufacturing equipment that uses corrosive substances within the device is not limited to, but from the perspective of utilizing its chemical resistance properties, photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), discam equipment), thin film formation / etching / cleaning and drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect correction equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment Preferably, the equipment includes (wet cleaning equipment, scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, reduced-pressure CVD, plasma CVD equipment, metal CVD equipment, mist CVD equipment, ALD equipment), other thin-film deposition equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (bump plating equipment), aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (various life testing equipment). As related equipment for semiconductor manufacturing equipment, the following are preferred: pure water and chemical solution systems (chemical supply systems, slurry supply systems, chemical purification systems, wastewater treatment systems), various gas systems (gas generators, gas purification systems, gas mixing systems, gas detection systems, exhaust gas treatment systems), cleanroom systems (thermal chambers, environmental testing systems), and other manufacturing-related equipment (various jig cleaning and drying systems, flow control equipment, various packaging systems, measuring instruments for liquids and various gases).

[0104] As described above, the components of this disclosure can be suitably used as components for semiconductor manufacturing equipment (semiconductor manufacturing equipment and related equipment), and due to their excellent chemical resistance, they are particularly suitable as components constituting semiconductor manufacturing equipment in which chemicals are used, and especially as components that come into contact with chemicals.

[0105] The above-mentioned chemicals are not particularly limited, but examples include chemicals used in semiconductor manufacturing equipment. The above-mentioned chemicals can be used individually or in combination of two or more.

[0106] Specifically, the above-mentioned chemical is TMAH([(CH ３ ) ４ N] ＋ [OH] － ), sodium hydroxide aqueous solution, sulfuric acid, isopropyl alcohol, hydrofluoric acid, hydrofluoric acid and nitric acid mixture, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ (O mixture), SC2 (HCl, H ２ O ２ and H ２ Examples include at least one selected from the group consisting of a mixture of O, phosphoric acid, and hydrochloric acid. Among these, TMAH, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM, SC1, SC2, phosphoric acid, and hydrochloric acid are preferred, and TMAH, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM, and hydrochloric acid are more preferred.

[0107] Other examples of the above-mentioned chemicals include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen / halogenated gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0108] Examples of silicon-based gases include monosilane, dichlorosilane, trichloride silane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of arsenic-based gases include arsine, arsenic(III) fluoride, arsenic(V) fluoride, arsenic(III) chloride, and arsenic(V) chloride. Examples of phosphorus-based gases include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of boron-based gases include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of metal hydride gases include hydrogen selenide, monogermane, hydrogen telluride, stivin, and tin hydride. Examples of metal alkyl gases include trialkylgallium and trialkylindium. Examples of the above-mentioned halogenated hydrocarbon gases include methane tetrafluoride, methane trifluoride, methane difluoride, propane hexafluoride, propane octafluoride, and cyclobutane octafluoride. Examples of the above-mentioned halogen and halogenated gases include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten (VI) fluoride, molybdenum (VI) fluoride, germanium tetrachloride, tin (IV) chloride, antimony (V) chloride, tungsten (VI) chloride, and molybdenum hexachloride. Examples of the above-mentioned nitrogen oxide gases include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, dinitrogen monoxide, monosilane, and cyclobutane octafluoride are preferred, and ammonia gas, nitrogen trifluoride, and dinitrogen monoxide are more preferred.

[0109] The component of this disclosure may have only the portion (layer) containing the polypropylene resin, or it may have both the portion (layer) containing the polypropylene resin and the other portion (layer). From the viewpoint of ensuring chemical resistance, it is preferable that at least a portion of the surface that comes into contact with the chemical is composed of the portion (layer) containing the polypropylene resin, and it is more preferable that the entire surface that comes into contact with the chemical is composed of the portion (layer) containing the polypropylene resin.

[0110] Preferably, when 0.5 g of the material of this disclosure is ashed at 600°C for 5 hours using a muffle furnace, the total metal content of the 17 elements (Li, Na, Mg, Al, K, Ca, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd, Ba, Pb) is 200 ppm or less. The total metal content is preferably 195 ppm or less, more preferably 190 ppm or less, even more preferably 180 ppm or less, even more preferably 170 ppm or less, even more preferably 150 ppm or less, even more preferably 100 ppm or less, even more preferably 70 ppm or less, and may also be 1 ppm or more, and may be 10 ppm or more. The above metal content can be determined by the method described in the examples.

[0111] The present disclosure preferably has a total metal leaching amount of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) of 20 ppb or less when a test piece of the present disclosure (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week. The present disclosure exhibits excellent cleanliness. The total metal leaching amount is preferably 18 ppb or less, more preferably 16 ppb or less, even more preferably 15 ppb or less, even more preferably 10 ppb or less, even more preferably 7 ppb or less, and may be 1 ppb or more, or 3 ppb or more. The above metal leaching amount can be determined by the method described in the examples.

[0112] The members of this disclosure are preferably such that the standard deviation of the relative mass after immersion is 1.5 or less when a test specimen (size: 10 mm x 50 mm x 2 mm) of the member is immersed in each of the 10 chemical solutions (1) to (10) described later for one week, with the mass before immersion set to 100. Members that satisfy this requirement have excellent corrosion resistance. The standard deviation of the above relative value is more preferably 1.1 or less, even more preferably 1.0 or less, even more preferably 0.9 or less, and may be 0 or more, or 0.4 or more. Ideally (most preferably) it is 0.

[0113] The chemical solution used for immersing the above test specimens is as follows: (1) 25% by mass TMAH ([(CH ３ ) ４ N] ＋ [OH] － (1) 98% by mass sulfuric acid (90°C) (2) 100% by mass isopropyl alcohol (80°C) (4) 49% by mass hydrofluoric acid (70°C) (5) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:5) (20°C) (6) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) (7) SPM (a mixture of 98% by mass sulfuric acid and 30-36% by mass hydrogen peroxide in a volume ratio of 2:1) (80°C) (8) SC1 (a mixture of 25-28% by mass ammonia water, 30-36% by mass hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) (9) SC2 (a mixture of 35-37% by mass hydrochloric acid, 30-36% by mass hydrogen peroxide solution, and deionized water in a volume ratio of 1:1:4) (70°C) (10) 85% by mass phosphoric acid (80°C)

[0114] In terms of heat resistance, the member of this disclosure preferably has a load deflection temperature of 50°C or higher at a load of 0.45 MPa, more preferably 55°C or higher, even more preferably 60°C or higher, even more preferably 65°C or higher, even more preferably 70°C or higher, even more preferably 75°C or higher, even more preferably 80°C or higher, even more preferably 85°C or higher, and even more preferably 90°C or higher, and may also be 120°C or lower, or 110°C or lower. The above load deflection temperature is measured at a load of 0.45 MPa in accordance with JIS K7191.

[0115] The member of this disclosure preferably has a water contact angle of 80 degrees or more, more preferably 85 degrees or more, even more preferably 88 degrees or more, and even more preferably 90 degrees or more. The upper limit is not particularly limited, but may be 140 degrees or less, or 120 degrees or less. Members that satisfy this requirement have good liquid repellency, so chemicals flow easily and deterioration of the member can be suppressed. The above water contact angle is determined by measuring the water contact angle of the surface of the member using a fully automatic contact angle meter DropMaster 701 (manufactured by Kyowa Interface Science Co., Ltd.).

[0116] The components of this disclosure can be manufactured, for example, by molding a material containing the above-mentioned polypropylene resin and, if necessary, other components as described above. The molding method is not particularly limited, and known methods such as extrusion molding, injection molding, transfer molding, blow molding, inflation molding, and compression molding can be employed.

[0117] This disclosure is, １３ The present invention also relates to semiconductor manufacturing equipment (semiconductor manufacturing equipment and related equipment) equipped with a component containing a polypropylene resin in which the isotactic pentad fraction of the propylene homopolymer, as measured by 13C NMR, is 96.0% or higher. The above-mentioned components can be suitably used as the type of propylene resin and other components that may be included in the component. Because the semiconductor manufacturing equipment of this disclosure contains the above-mentioned polypropylene resin, it has excellent corrosion resistance and heat resistance.

[0118] The above semiconductor manufacturing equipment preferably uses corrosive substances internally, and more preferably uses corrosive substances internally, with the corrosive substances coming into contact with the above-mentioned components. Since the above-mentioned components have excellent corrosion resistance as described above, the effect is further enhanced. Examples of corrosive substances include those mentioned above.

[0119] Although embodiments have been described above, it should be understood that various modifications to the form and details are possible without departing from the spirit and scope of the claims.

[0120] The present disclosure will now be further described with reference to examples, but the present disclosure is not limited to these examples.

[0121] Various physical properties were measured using the following method.

[0122] <Weight-average molecular weight (Mw), number-average molecular weight (Mn)> These are measured by gel permeation chromatography (GPC, column temperature: 140°C, eluent: 1,2,4-trichlorobenzene) and converted to polystyrene equivalent.

[0123] <Content of components with a molecular weight of 10,000 or less> The content of components with a weight-average molecular weight of 10,000 or less is determined from the integrated curve of gel permeation chromatography (GPC, column temperature: 140°C, eluent: 1,2,4-trichlorobenzene).

[0124] <mmmm fraction> The mmmm fraction is, １３ The values ​​were calculated using 1C-NMR according to the method described in "Zambelli et al., Macromolecules, Vol. 6, 925 (1973)". １３ ¹³C-NMR measurements were performed using a BRUKER AVANCE 500. The measurement conditions are as follows: Solvent: 1,2-dichlorobenzene / 1,2-dichlorobenzene-d4 mixed solvent (volume ratio 4 / 1) Sample concentration: 200 mg / 3.0 ml Measurement temperature: 135°C

[0125] <Melting Point> The melting point was defined as the temperature corresponding to the maximum value in the heat of fusion curve when the temperature was increased at a rate of 10°C / min using a differential scanning calorimetry (DSC) device.

[0126] <Chemical Resistance (Corrosion Resistance) Test> The resin sheets obtained in the examples and comparative examples were cut to a size of 10 mm x 50 mm x 2 mm to be used as test specimens. The test specimens were dried at 60°C for 2 hours. After drying, the mass of the test specimens before immersion was measured under room temperature (20°C). After measurement, the test specimens were completely immersed in each of the chemical solutions (1) to (10) below and held for 1 week (168 hours). After holding, the test specimens were washed with pure water, the water droplets on the surface were wiped off, and they were dried at 60°C for 12 hours. The mass of the test specimens after immersion was measured under room temperature (20°C). From the measured masses before and after immersion, the relative value of the mass after immersion was calculated with the mass before immersion set to 100, and the standard deviation of the post-immersion mass (relative value) for the 10 types (1) to (10) was determined. (Chemical Solutions) (1) 25% by mass TMAH ([(CH ３ ) ４ N] ＋ [OH] － (2) 98% by mass sulfuric acid (90°C) Oxidation-reduction potential (vs NHE): 1.1V (3) 100% by mass isopropyl alcohol (80°C) (4) 49% by mass hydrofluoric acid (70°C) (5) Mixed acid of hydrofluoric acid and nitric acid (mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:5) (20°C) (6) Mixed acid of hydrofluoric acid and nitric acid (mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) (7) SPM (mixture of 98% by mass sulfuric acid and 30-36% by mass hydrogen peroxide in a volume ratio of 2:1) (80°C) Oxidation-reduction potential (vs NHE): 1.8V (8) SC1 (a mixture of 25-28% by mass aqueous ammonia, 30-36% by mass aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) Redox potential (vs NHE): 1.2V (9) SC2 (a mixture of 35-37% by mass hydrochloric acid, 30-36% by mass aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) Redox potential (vs NHE): 1.6V (10) 85% by mass phosphoric acid (80°C)

[0127] <Metal Content> 0.5 g of the resin samples used in the examples and comparative examples were washed with 10 mL of ultrapure water and ashed at 600°C for 5 hours using a muffle furnace (FUW222PB, Advantec Toyo Co., Ltd.). The ashed samples were dissolved in 10 mL of 5% by mass nitric acid, and the metal concentrations of 17 elements (Li, Na, Mg, Al, K, Ca, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd, Ba, Pb) were measured using ICP-MSI (Agilent 5900, Agilent Technologies) to determine the metal content.

[0128] <Metal Leaching Test> The resin sheets obtained in the examples and comparative examples were cut to a size of 10 mm x 50 mm x 2 mm to serve as test specimens. As a pre-cleaning step, the test specimens were immersed in 3.6 mass% hydrochloric acid for 1 hour, and then rinsed with pure water. After that, the test specimens were immersed in 100 mL of 3.6 mass% hydrochloric acid at 23°C. One week (168 hours) after the start of immersion, a portion of each immersion solution was withdrawn, and the metal concentrations of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) were measured using ICP-MSI (Agilent 8900, manufactured by Agilent Technologies) to determine the amount of metal leached.

[0129] In the examples and comparative examples, polypropylene resin having the physical properties shown in Table 1 was used.

[0130] Example 1: PP1 was heated and melted at 230°C for 10 minutes using a heat press to form a shape of 10 mm × 500 mm × 2 mm. Then, it was cooled at 10°C / min to room temperature to produce a resin sheet (component). Various tests were performed using the obtained resin sheet. The results are shown in Tables 1 to 3.

[0131] In Example 2 and Comparative Example 1, resin sheets (components) were prepared in the same manner as in Example 1, except that PP2 was used in Example 2 and PP3 in Comparative Example 1 instead of PP1. Various tests were conducted using the obtained resin sheets. The results are shown in Tables 1 to 3.

[0132]

[0133]

[0134]

[0135] The components of the embodiment were suitable for use as components (parts) in semiconductor manufacturing equipment where chemicals are used.

Claims

1. １３ A component that comes into contact with corrosive substances, comprising a polypropylene resin in which the isotactic pentad fraction of the propylene homopolymer, as measured by C-NMR, is 96.0% or higher.

2. The member according to claim 1, wherein the member is at least one selected from the group consisting of a transfer system member, a storage device member, a container member, a valve member, a pump member, and a sealing system member.

3. The member according to claim 1 or 2, wherein the member is at least one selected from the group consisting of tubes, pipes, nozzles, fittings, tanks, containers, housings, wetted parts of valves, wetted parts of pumps, O-rings, packings, gaskets, and washers.

4. The member according to any one of claims 1 to 3, wherein the member is a member for semiconductor manufacturing-related equipment.

5. The member according to any one of claims 1 to 4, wherein the propylene homopolymer portion of the polypropylene resin is 85 mol% or more.

6. The member according to claim 5, wherein the propylene homopolymer portion of the polypropylene resin is 95 mol% or more.

7. The component according to any one of claims 1 to 6, wherein the melting point of the polypropylene resin is 160°C or higher.

8. The weight-average molecular weight of the polypropylene resin is 2.0 × 10 ５ The member according to any one of claims 1 to 7.

9. The weight-average molecular weight of the polypropylene resin is 2.6 × 10 ５ The above 5.0 x 10 ５ The member according to claim 8, which is as follows:

10. The component according to any one of claims 1 to 9, wherein the ratio of weight-average molecular weight to number-average molecular weight in the polypropylene resin is 3.5 or more and 4.0 or less.

11. The member according to any one of claims 1 to 10, wherein the polypropylene resin contains less than 5% by mass of components with a weight-average molecular weight of 10,000 or less.

12. The member according to any one of claims 1 to 11, wherein the total metal content of the 17 elements (Li, Na, Mg, Al, K, Ca, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd, Ba, Pb) when the member is ashed is 200 ppm or less.

13. The member according to any one of claims 1 to 12, wherein the total amount of metal leaching of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) when a test piece of the member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week is 20 ppb or less.

14. The member according to any one of claims 1 to 13, wherein the pH of the corrosive substance is 6 or less or 8 or more.

15. The member according to any one of claims 1 to 14, wherein the oxidation-reduction potential (vs NHE) of the corrosive substance is -2.0 to 3.0 V.

16. The member according to any one of claims 1 to 15, wherein the corrosive substance is a fluid.

17. The member according to any one of claims 1 to 16, wherein the corrosive substance is at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, and organic solvents.

18. The member according to claim 17, wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide solution and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide solution and sulfuric acid.

19. The basic substance is TMAH ([(CH ３ ) ４ N] ＋ [OH] － The member according to claim 17, which is at least one selected from the group consisting of ammonia water, sodium hydroxide aqueous solution, and a mixed chemical solution of hydrogen peroxide and ammonia water.

20. The member according to claim 17, wherein the organic solvent is isopropyl alcohol.

21. The member according to any one of claims 1 to 20, wherein when a test piece of said member (size: 10 mm × 50 mm × 2 mm) is immersed in each of the following 10 types of chemical solutions for one week, and the relative value of the mass after immersion with the mass before immersion taken as 100 is calculated respectively, the standard deviation is 1.5 or less. (Chemical solutions) 25 mass% TMAH ([(CH ３ ) ４ N] ＋ [OH] － ) (80°C) 98 mass% sulfuric acid (90°C) 100 mass% isopropyl alcohol (80°C) 49 mass% hydrofluoric acid (70°C) mixed acid of hydrofluoric acid and nitric acid (mixture of 49 mass% hydrofluoric acid and 69 to 71 mass% nitric acid at a volume ratio of 1:5) (20°C) mixed acid of hydrofluoric acid and nitric acid (mixture of 49 mass% hydrofluoric acid and 69 to 71 mass% nitric acid at a volume ratio of 1:100) (20°C) SPM (mixture of 98 mass% sulfuric acid and 30 to 36 mass% hydrogen peroxide solution at a volume ratio of 2:1) (80°C) SC1 (mixture of 25 to 28 mass% ammonia water, 30 to 36 mass% hydrogen peroxide solution and deionized water at a volume ratio of 1:1:5) (70°C) SC2 (mixture of 35 to 37 mass% hydrochloric acid, 30 to 36 mass% hydrogen peroxide solution and deionized water at a volume ratio of 1:1:4) (70°C) 85 mass% phosphoric acid (80°C) twenty two. １３ A semiconductor manufacturing apparatus equipped with a component containing polypropylene resin in which the isotactic pentad fraction of the propylene homopolymer, as measured by C-NMR, is 96.0% or higher.

23. The semiconductor manufacturing apparatus according to claim 22, wherein a corrosive substance is used within the apparatus.

24. The semiconductor manufacturing apparatus according to claim 22 or 23, wherein a corrosive substance is used in the apparatus and the corrosive substance comes into contact with the member.

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