Member, and semiconductor manufacturing–related device

Abstract

The present disclosure provides a member having excellent corrosion resistance and a semiconductor manufacturing–related device using the same. The present disclosure relates to a member that contains a polymethylpentene resin, is in contact with a corrosive substance, and is a sealing member.

Description

Member and semiconductor manufacturing-related apparatus

[0001] The present disclosure relates to a member and a semiconductor manufacturing-related apparatus.

[0002] It has been proposed to use polyethylene satisfying predetermined requirements for high-purity chemical containers (see, for example, Patent Document 1).

[0003] Japanese Unexamined Patent Publication No. 10-17729

[0004] An object of the present disclosure is to provide a member excellent in corrosion resistance, and a semiconductor manufacturing-related apparatus using the same. Furthermore, an object of the present disclosure is to provide a member excellent in heat resistance and sealing performance, and a semiconductor manufacturing-related apparatus using the same.

[0005] The present disclosure (1) is a member that contains a polymethylpentene resin, is in contact with a corrosive substance, and is a sealing-based member.

[0006] The present disclosure (2) is the member according to the present disclosure (1), which is at least one selected from the group consisting of an O-ring, a packing, a gasket, and a washer.

[0007] The present disclosure (3) is the member according to the present disclosure (1) or (2), wherein the content of a constituent unit derived from 4-methyl-1-pentene in the polymethylpentene resin is 85 mol% or more.

[0008] The present disclosure (4) is the member according to any one of the present disclosures (1) to (3), wherein the melt flow rate of the polymethylpentene resin is 1 g / 10 minutes or more.

[0009] The present disclosure (5) is the member according to the present disclosure (4), wherein the melt flow rate of the polymethylpentene resin is 20 g / 10 minutes to 30 g / 10 minutes.

[0010] The present disclosure (6) is the member according to any one of the present disclosures (1) to (5), wherein the melting point of the polymethylpentene resin is 200°C or higher.

[0011] The present disclosure (7) is the member according to the present disclosure (6), wherein the melting point of the polymethylpentene resin is 220°C to 250°C.

[0012] Disclosure (8) is a component according to any one of Disclosures (1) to (7), wherein the polymethylpentene resin has a load deflection temperature of 80°C or higher at a load of 0.45 MPa.

[0013] Disclosure (9) is a component according to any one of Disclosures (1) to (8), wherein the total metal content of 17 elements (Li, Na, Mg, Al, K, Ca, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd, Ba, Pb) when the polymethylpentene resin is ashed is 60 ppm or less.

[0014] This disclosure (10) shows that when a test specimen of the member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week (168 hours), the amount of metal leaching of 15 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) from the surface of the test specimen of the member is 20 μg / m² per surface area of ​​the test specimen of the member. ２ The component is one of the following (1) to (9) of this disclosure.

[0015] Disclosure (11) is a component according to any one of Disclosures (1) to (10), wherein the weight-average molecular weight of the polymethylpentene resin is 30,000 or more.

[0016] Disclosure (12) is a component according to any one of Disclosures (1) to (11), wherein the rate of change in surface modulus before and after immersion of a test specimen (size: 10 mm x 50 mm x 2 mm) in the following chemical solution for one week (168 hours) is 0.5% or less. (Chemical solution) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C)

[0017] This disclosure (13) is the member described in this disclosure (12), wherein the rate of change in surface modulus before and after immersion of a test specimen (size: 10 mm x 50 mm x 2 mm) in the following chemical solution for one week (168 hours) is 0.2% or less. (Chemical solution) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C)

[0018] Disclosure (14) is a component according to any of Disclosures (1) to (13) having a water contact angle of 95° or more.

[0019] Disclosure (15) is a member according to any of Disclosures (1) to (14) having a static friction coefficient of 0.4 or higher.

[0020] Disclosure (16) is a member according to any one of Disclosures (1) to (15) having a coefficient of dynamic friction of 0.3 or more.

[0021] Disclosure (17) is a member according to any one of Disclosures (1) to (16), wherein when a test specimen (size: 10 mm x 10 mm x 2 mm) of the member is subjected to a compression creep test at 20 MPa for 3 days (72 hours), the rate of change in the thickness of the test specimen before and after the test is 25% or less.

[0022] Disclosure (18) is a component according to any one of Disclosures (1) to (17), wherein the pH of the corrosive substance is 6 or less or 8 or more.

[0023] The present disclosure (19) is a component according to any one of the present disclosures (1) to (18), wherein the oxidation-reduction potential (vsNHE) of the corrosive substance is -2.0 to 3.0 V.

[0024] Disclosure (20) is a component according to any one of Disclosures (1) to (19), wherein the corrosive substance is a fluid.

[0025] The present disclosure (21) is a component according to any one of the present disclosures (1) to (20), wherein the corrosive substance is at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances and organic solvents.

[0026] The present disclosure (22) is a component according to the present disclosure (21), wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide solution and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide solution and sulfuric acid.

[0027] This disclosure (23) states that the basic substance is TMAH ([(CH ３ ) ４ N] ＋ [OH] －The component is the one described in disclosure (21), which is at least one selected from the group consisting of ammonia water, sodium hydroxide aqueous solution, and a mixed chemical solution of hydrogen peroxide and ammonia water.

[0028] This disclosure (24) is the component according to this disclosure (21), wherein the organic solvent is isopropyl alcohol.

[0029] Disclosure (25) is a component described in any of Disclosures (1) to (24) which is a component for semiconductor manufacturing equipment.

[0030] The present disclosure (26) relates to a component that is a sealing component that comes into contact with corrosive substances, comprising a resin having a melt flow rate of 0.1 to 500 g / 10 min, a melting point of 180 to 250°C, and a load deflection temperature of 80°C or higher at a load of 0.45 MPa.

[0031] The present disclosure (27) is a component according to the present disclosure (26), wherein the melt flow rate of the resin is 20 g / 10 min to 30 g / 10 min.

[0032] The present disclosure (28) is a component according to the present disclosure (26) or (27), wherein the melting point of the resin is 220°C to 250°C.

[0033] This disclosure (29) relates to semiconductor manufacturing equipment equipped with a sealing component containing polymethylpentene resin.

[0034] The present disclosure (30) is a semiconductor manufacturing apparatus according to the present disclosure (29), wherein the melt flow rate of the polymethylpentene resin is 20 g / 10 min to 30 g / 10 min.

[0035] The present disclosure (31) is a semiconductor manufacturing apparatus according to the present disclosure (29) or (30), wherein the melting point of the polymethylpentene resin is 220°C to 250°C.

[0036] Disclosure (32) is a semiconductor manufacturing-related apparatus according to any one of Disclosures (29) to (31), which is at least one selected from the group consisting of mask and reticle manufacturing apparatus, wafer manufacturing apparatus, wafer processing apparatus, assembly apparatus, inspection apparatus and semiconductor manufacturing apparatus-related apparatus.

[0037] The present disclosure (33) states that the mask reticle manufacturing apparatus is at least one selected from the group consisting of a photolithography process apparatus, a thin film formation / etching / cleaning / drying apparatus, and an inspection and evaluation apparatus; the wafer manufacturing apparatus is a wafer processing apparatus; the wafer process processing apparatus is at least one selected from the group consisting of a resist processing apparatus, an etching apparatus, a cleaning / drying apparatus, a heat processing apparatus, an ion implantation apparatus, a thin film formation apparatus, a CVD apparatus, a sputtering apparatus, an inspection and evaluation apparatus, a CMP apparatus, and an processing apparatus; the assembly apparatus is at least one selected from the group consisting of a dicing apparatus, a bonding apparatus, and a packaging apparatus; and the inspection apparatus is at least one selected from the group consisting of a testing apparatus, a probing apparatus, a handler, an aging apparatus, a cold / heat testing apparatus, a temperature / humidity testing apparatus, a pressure cooker apparatus, a laser processing system, and a lifetime testing apparatus. The semiconductor manufacturing equipment described in (32) is a semiconductor manufacturing equipment according to the present disclosure, wherein the semiconductor manufacturing equipment is at least one selected from the group consisting of a conveying device, a pure water / chemical solution device, a gas device, a cleanroom device, a jig cleaning / drying device, a flow control device, a taping device, a packaging device, and liquid / gas measuring instruments.

[0038] The present disclosure (34) provides that the photolithography apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), a baking apparatus, and a discam apparatus; the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a sputtering apparatus, a CVD apparatus, and a drying apparatus; the inspection and evaluation apparatus is a defect correction apparatus; the wafer processing apparatus is a wafer marking apparatus; the resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, an ashing apparatus, and a baking apparatus; the etching apparatus is a dry etching apparatus; the cleaning / drying apparatus is at least one selected from the group consisting of a dry cleaning apparatus and a drying apparatus; the heat processing apparatus is at least one selected from the group consisting of an oxidation apparatus, a diffusion apparatus, and an annealing apparatus; and the ion implantation apparatus is at least one selected from the group consisting of a high-current ion implantation apparatus, a medium-current ion implantation apparatus, and a high-energy ion implantation apparatus. The CVD apparatus is at least one selected from the group consisting of high-pressure CVD apparatus, SACVD, reduced-pressure CVD, plasma CVD apparatus, metal CVD apparatus, mist CVD apparatus, and ALD apparatus; the thin-film deposition apparatus is at least one selected from the group consisting of vacuum deposition apparatus, silicon epitaxial growth apparatus, compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and plating apparatus; the inspection and evaluation apparatus is an Auger electron spectrometer; the processing apparatus is at least one selected from the group consisting of wafer marking apparatus, back grinding machine, bump plating apparatus, back grinder tape application machine, back grinder, and back grinder tape peeling machine; and the dicing apparatus is at least one selected from the group consisting of dicing apparatus and wafer mounting apparatus. The bonding apparatus is at least one selected from the group consisting of a die bonding apparatus, a hybrid bonding apparatus, a wire bonding apparatus, an inner lead bonding apparatus, an outer lead bonding apparatus, and a flip-chip bonding apparatus.The packaging apparatus is at least one selected from the group consisting of a molding apparatus, a deburring apparatus, and a soldering apparatus; the testing apparatus is at least one selected from the group consisting of an electron beam testing apparatus and a laser beam testing apparatus; the probing apparatus is a prober; the aging apparatus is an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the transport apparatus is at least one selected from the group consisting of an in-process wafer transport apparatus, an inter-process wafer transport apparatus, and a stocker; the pure water / chemical solution apparatus is at least one selected from the group consisting of a pure water production apparatus, an ultrafiltration apparatus, a reverse osmosis apparatus, a sterilization apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generator, a gas purification apparatus, a gas mixing apparatus, and a gas detection apparatus. The aforementioned cleanroom apparatus is the semiconductor manufacturing apparatus according to the present disclosure (33), wherein the cleanroom apparatus is at least one selected from the group consisting of a clean bench, a clean tunnel, a thermal chamber, an environmental testing apparatus, an air shower, and a pass box.

[0039] This disclosure (35) is a semiconductor manufacturing apparatus as described in any of these disclosures (29) to (34), in which corrosive substances are used within the apparatus.

[0040] The present disclosure (36) is a semiconductor manufacturing-related apparatus according to any one of the present disclosures (29) to (35), wherein a corrosive substance is used in the apparatus and the corrosive substance comes into contact with the component.

[0041] This disclosure provides a component with excellent corrosion resistance and semiconductor manufacturing equipment using the same. Furthermore, this disclosure provides a component with excellent heat resistance and sealing properties and semiconductor manufacturing equipment using the same.

[0042] The following provides a detailed explanation of this disclosure.

[0043] This disclosure relates to a component (hereinafter also referred to as "Component (1) of this Disclosure") that contains polymethylpentene resin, comes into contact with corrosive substances, and is a sealing component.

[0044] Furthermore, this disclosure also relates to a sealing component (hereinafter also referred to as "Component (2) of this Disclosure") that contains a resin having a melt flow rate of 0.1 to 500 g / 10 min, a melting point of 180 to 250°C, and a load deflection temperature of 80°C or higher at a load of 0.45 MPa, and that comes into contact with corrosive substances. (Hereinafter, Component (1) of this Disclosure and Component (2) of this Disclosure will be collectively referred to as "Component of this Disclosure.")

[0045] The components of this disclosure exhibit excellent corrosion resistance (particularly chemical resistance). They also possess excellent heat resistance and can suppress metal leaching. Furthermore, the components of this disclosure have excellent heat resistance and can be used even at high temperatures. In addition, due to their high coefficient of friction, they adhere tightly to the seating surface (joint surface) and provide good sealing performance. Moreover, even when in contact with corrosive substances, the change in surface modulus is small, allowing for long-term use.

[0046] The member (1) of the present disclosure comprises a polymethylpentene resin. Preferably, at least a portion of the part of the member that comes into contact with a corrosive substance comprises a polymethylpentene resin; more preferably, the entire part of the member that comes into contact with a corrosive substance comprises a polymethylpentene resin; and even more preferably, the entire part of the member that comes into contact with a corrosive substance consists solely of a polymethylpentene resin.

[0047] The above polymethylpentene resin (PMP) may be a homopolymer of 4-methyl-1-pentene, or a copolymer of 4-methyl-1-pentene and another monomer.

[0048] The other monomers (comonomers) in the polymethylpentene resin described above are not particularly limited as long as they are monomers that can copolymerize with 4-methyl-1-pentene. From the viewpoint of ease of availability and copolymerization characteristics, preferred examples of the other monomers are α-olefins having 2 to 20 carbon atoms, such as ethylene, propylene, 1-butene, 1-pentene, 1-hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-hexadecene, 1-octadecene, 1-eicosene, 3-methyl-1-butene, 3-methyl-1-pentene, 3-ethyl-1-pentene, 4,4-dimethyl-1-pentene, 4-methyl-1-hexene, 4,4-dimethyl-1-hexene, 4,4-ethyl-1-hexene, and 3-ethyl-1-hexene. The other monomers may be used individually or in combination of two or more. Among these, ethylene, propylene, 1-butene, 3-methyl-1-butene, 1-hexene, 3-methyl-1-pentene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-hexadecene, and 1-octadecene are preferred, and α-olefins other than methyl-1-pentene having 6 to 20 carbon atoms, such as 1-hexene, 3-methyl-1-pentene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-hexadecene, and 1-octadecene are more preferred, and 1-hexene, 1-decene, 1-hexadecene, and 1-octadecene are even more preferred.

[0049] In the above polymethylpentene resin, the content of constituent units derived from 4-methyl-1-pentene is preferably 85 mol% or more, more preferably 90 mol% or more, even more preferably 95 mol% or more, even more preferably 97 mol% or more, even more preferably 98 mol% or more, and even more preferably 98.1 mol% or more. The content of constituent units derived from other monomers is preferably 15 mol% or less, more preferably 10 mol% or less, even more preferably 5 mol% or less, and even more preferably 3 mol% or less. The monomer composition is IR or １３ It can be measured by C-NMR.

[0050] The polymethylpentene resin described above may also be a graft-modified polymer obtained by graft-modifying a 4-methyl-1-pentene polymer with a polar monomer.

[0051] Examples of polar monomers used for graft modification include hydroxyl group-containing ethylenically unsaturated compounds, amino group-containing ethylenically unsaturated compounds, epoxy group-containing ethylenically unsaturated compounds, aromatic vinyl compounds, unsaturated carboxylic acids or their derivatives, vinyl ester compounds, vinyl chloride, and carbodiimide compounds. Unsaturated carboxylic acids or their derivatives are particularly preferred. Examples of unsaturated carboxylic acids or their derivatives include unsaturated compounds having one or more carboxylic acid groups, esters of compounds having carboxylic acid groups with alkyl alcohols, and unsaturated compounds having one or more anhydride carboxylic acid groups. Examples of unsaturated groups include vinyl groups, vinylene groups, and unsaturated cyclic hydrocarbon groups.

[0052] Specifically, the polar monomers mentioned above include unsaturated carboxylic acids such as acrylic acid, maleic acid, fumaric acid, tetrahydrophthalic acid, itaconic acid, citraconic acid, crotonic acid, isocrotonic acid, and nadic acid (endosis-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid), and derivatives of unsaturated carboxylic acids, such as acid halides, amides, imides, anhydrides, and esters. Specific examples of such derivatives include malenyl chloride, maleimide, maleic anhydride, citraconic anhydride, monomethyl maleate, dimethyl maleate, and glycidyl maleate.

[0053] The above polymethylpentene resin preferably has a melt flow rate of 1 g / 10 min or more, more preferably 8 g / 10 min or more, even more preferably 15 g / 10 min or more, even more preferably 20 g / 10 min or more, and also preferably 200 g / 10 min or less, more preferably 100 g / 10 min or less, and even more preferably 30 g / 10 min or less. The above MFR is a value obtained in accordance with ASTM D1238 using a melt indexer as the mass of polymer flowing out per 10 minutes (g / 10 min) at 260°C and a load of 5 kg.

[0054] The above polymethylpentene resin preferably has a melting point of 200°C or higher, more preferably 210°C or higher, even more preferably 215°C or higher, even more preferably 220°C or higher, even more preferably 225°C or higher, even more preferably 230°C or higher, and also preferably 280°C or lower, more preferably 260°C or lower, and even more preferably 250°C or lower. The above melting point is the temperature corresponding to the maximum value in the heat of fusion curve when the temperature is increased for the second time at a rate of 10°C / min using a differential scanning calorimeter (DSC).

[0055] The above polymethylpentene resin is preferably such that, in terms of heat resistance, the deflection temperature at a load of 0.45 MPa is 80°C or higher, more preferably 83°C or higher, even more preferably 86°C or higher, even more preferably 90°C or higher, even more preferably 93°C or higher, and even more preferably 96°C or higher. It may also be 120°C or lower, or 110°C or lower. The above deflection temperature is measured at a load of 0.45 MPa in accordance with JIS K7191.

[0056] The above polymethylpentene resin preferably has a weight-average molecular weight of 30,000 or more, more preferably 100,000 or more, even more preferably 300,000 or more, even more preferably 400,000 or more, and also preferably 2,000,000 or less, more preferably 1,000,000 or less, and even more preferably 600,000 or less. The above weight-average molecular weight is measured by polystyrene equivalent using gel permeation chromatography (GPC, column temperature: 140°C, eluent: 1,2,4-trichlorobenzene).

[0057] The mesodiad isotacticity (mesodiad fraction) of the above polymethylpentene resin is not particularly limited, but is usually 85% or more, preferably 90% or more, more preferably 95% or more, and is also usually 100% or less.

[0058] It is preferable that the total metal content of 17 elements (Li, Na, Mg, Al, K, Ca, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd, Ba, Pb) when the polymethylpentene resin is ashed is 60 ppm or less. The total metal content is preferably 55 ppm or less, more preferably 50 ppm or less, still more preferably 45 ppm or less, even more preferably 35 ppm or less, and may be 1 ppm or more, or 10 ppm or more. The metal content can be obtained by the method described in the Examples.

[0059] When a test piece of the above polymethylpentene resin (size: 10 mm × 50 mm × 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for 1 week (168 hours), the elution amount of each of 15 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) eluted from the surface of the test piece is 20 μg / m per surface area of the test piece respectively ２ or less, which is preferable. More preferably, each of the above metal elution amounts is 10 μg / m ２ or less, still more preferably 7 μg / m ２ or less, even more preferably 5 μg / m ２ or less, even more preferably 3 μg / m ２ or less, even more preferably 2 μg / m ２ or less, even more preferably 1 μg / m ２ or less, even more preferably 0.5 μg / m ２ or less, even more preferably 0.1 μg / m ２ or less. The lower limit is not particularly limited, and 0 μg / m ２ is the most preferable. The metal elution amount can be obtained by the method described in the Examples.

[0060] When a test specimen of the above-mentioned polymethylpentene resin (size: 10 mm x 50 mm x 2 mm) was immersed in 3.6% by mass hydrochloric acid at 23°C for one week (168 hours), the total amount of metals leached from the surface of the test specimen by 15 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) was preferably 20 μg / m² per surface area of ​​the test specimen. ２ More preferably, 15 μg / m² ２ More preferably, 10 μg / m³ ２ More preferably, 5 μg / m ２ More preferably, 3 μg / m ２ More preferably, 2 μg / m ２ The following, and more preferably 1 μg / m³ ２ The following applies. The lower limit is not particularly limited, but is 0.1 μg / m³. ２ The above amounts may be used. The amount of metal eluted can be determined by the method described in the examples.

[0061] The component (1) of the present disclosure may optionally contain at least one polymer and resin additive other than the polymethylpentene resin, to the extent that it does not impair the effects of the present disclosure, depending on its application.

[0062] As the other polymers mentioned above, a wide range of thermoplastic resins different from the polymethylpentene resin can be used. The content of the other polymer is preferably 30% by mass or less, more preferably 20% by mass or less, and even more preferably 10% by mass or less, relative to the content of the polymethylpentene resin.

[0063] The thermoplastic resin is not particularly limited as long as it is different from the polymethylpentene resin mentioned above, but includes: Thermoplastic polyolefin resins: for example, polyethylene such as low-density, medium-density, and high-density polyethylene, and high-pressure low-density polyethylene; polypropylene such as isotactic polypropylene and syndiotactic polypropylene; poly-1-butene, poly-4-methyl-1-pentene, poly-3-methyl-1-pentene, poly-3-methyl-1-butene, ethylene-α-olefin copolymer, propylene-α-olefin copolymer, 1-butene-α-olefin copolymer, 4-methyl-1-pentene-α-olefin copolymer, amorphous cyclic olefin polymer, crystalline cyclic olefin polymer, cyclic olefin copolymer, chlorinated polyolefin, and modified polyolefin resins obtained by modifying these olefin resins; Thermoplastic polyamide resins: for example, aliphatic polyamides (nylon 6, nylon 11, nylon 12, nylon 66, nylon 610, nylon 612); Thermoplastic polyester resins: for example, polyethylene terephthalate, polybutylene terephthalate, polyester elastomers; Thermoplastic vinyl aromatic resins: for example, amorphous polystyrene, crystalline polystyrene, ABS resin, AS resin, styrene elastomers (styrene-butadiene-styrene block polymer, styrene-isoprene-styrene block polymer, styrene-isobutylene-styrene block polymer, and their hydrogenated versions); thermoplastic polyurethane; vinyl chloride resin; vinylidene chloride resin; acrylic resin; vinyl acetate copolymers such as ethylene-vinyl acetate copolymer; ethylene-methacrylate copolymer; ionomer; ethylene-vinyl alcohol copolymer; polyvinyl alcohol; fluorinated resins; polycarbonate; polyacetal; polyphenylene oxide; polyphenylene sulfide; polyimide; polyarylate; polysulfone; polyethersulfone; rosin resins; terpene resins and petroleum resins;Copolymer rubbers include, for example, ethylene-α-olefin-diene copolymer, propylene-α-olefin-diene copolymer, 1-butene-α-olefin-diene copolymer, polybutadiene rubber, polyisoprene rubber, cyclopentene rubber, neoprene rubber, nitrile rubber, butyl rubber, polyisobutylene rubber, natural rubber, silicone rubber, etc.

[0064] Among the thermoplastic polyolefin resins mentioned above, polyethylene and polypropylene can be used as crystal nucleating agents, and in that case, the preferred content is 0.001 to 5% by mass relative to the content of the polymethylpentene resin.

[0065] Among thermoplastic resins, preferred are low-density, medium-density, and high-density polyethylene, high-pressure low-density polyethylene, isotactic polypropylene, syndiotactic polypropylene, amorphous cyclic olefin polymers, crystalline cyclic olefin polymers, cyclic olefin copolymers, poly-1-butene, poly-3-methyl-1-pentene, poly-3-methyl-1-butene, ethylene-α-olefin copolymer, propylene-α-olefin copolymer, 1-butene-α-olefin copolymer, styrene-based elastomer, vinyl acetate copolymer, ethylene-methacrylate copolymer, ionomer, fluororesin-based resin, rosin-based resin, terpene-based resin, and petroleum resin. More preferably, in terms of improved heat resistance, improved low-temperature resistance, and flexibility, are polyethylene, isotactic polypropylene, syndiotactic polypropylene, cyclic olefin copolymer, ethylene-α-olefin copolymer, propylene-α-olefin copolymer, 1-butene-α-olefin copolymer, vinyl acetate copolymer, styrene-based elastomer, rosin-based resin, terpene-based resin, and petroleum resin.

[0066] Some or all of the above-mentioned other polymers may be graft-modified polymers obtained by graft-modifying the polymer with polar monomers.

[0067] The component (1) of this disclosure may contain a resin other than polymethylpentene resin (PMP). Examples of resins other than PMP include polyolefin resins (excluding PMP). Examples of the above polyolefin resins (excluding PMP) include polyethylene resin, polypropylene resin, ethylene-propylene copolymer resin, amorphous cycloolefin resin, crystalline cycloolefin resin, amorphous polystyrene resin, crystalline polystyrene resin, polybutylene resin, etc., and one or more of these can be used.

[0068] Examples of the above-mentioned additives for resins include nucleating agents, antiblocking agents, pigments, dyes, fillers, lubricants, plasticizers, mold release agents, antioxidants, flame retardants, UV absorbers, antibacterial agents, surfactants, antistatic agents, weather stabilizers, heat stabilizers, anti-slip agents, foaming agents, crystallization aids, anti-fogging agents, anti-aging agents, hydrochloric acid absorbers, impact modifiers, crosslinking agents, co-crosslinking agents, crosslinking aids, adhesives, softeners, and processing aids.

[0069] The above resin additives may be used individually or in combination of two or more. The content of the above resin additives is not particularly limited, depending on the application, as long as it does not impair the purpose of this disclosure, but it is preferably 0.001 to 30% by mass of each additive relative to the content of the polymethylpentene resin.

[0070] As nucleating agents, known nucleating agents can be used to further improve the moldability of the resin, that is, to raise the crystallization temperature and accelerate the crystallization rate. Specifically, examples include dibenzylidenesorbitol-based nucleating agents, phosphate ester salt-based nucleating agents, rosin-based nucleating agents, metal benzoate salt-based nucleating agents, fluorinated polyethylene, sodium 2,2-methylenebis(4,6-di-t-butylphenyl)phosphate, pimelic acid and its salts, 2,6-naphthalene dicarboxylic acid dicyclohexylamide, and ethylenebisstearate amide.

[0071] The amount of nucleating agent is not particularly limited, but is preferably 0.001 to 5 parts by mass per 100 parts by mass of the total amount of the polymethylpentene resin and other polymers. The nucleating agent can be added as appropriate during polymerization, after polymerization, or during molding.

[0072] Known antiblocking agents can be used. Specifically, these include finely powdered silica, finely powdered aluminum oxide, finely powdered clay, powdered or liquid silicone resin, tetrafluoroethylene resin, finely powdered crosslinked resin, such as crosslinked acrylic or methacrylic resin powder, and amide-based lubricants. Of these, finely powdered silica and crosslinked acrylic or methacrylic resin powder are preferred.

[0073] Examples of pigments include inorganic pigments (titanium dioxide, iron oxide, chromium oxide, cadmium sulfide, etc.) and organic pigments (azo lake type, thioindigo type, phthalocyanine type, anthraquinone type). Examples of dyes include azo type, anthraquinone type, triphenylmethane type, etc. The amount of these pigments and dyes added is not particularly limited, but the total amount is usually 5% by mass or less, preferably 0.1 to 3% by mass, relative to the content of the polymethylpentene resin.

[0074] Examples of fillers include glass fibers, carbon fibers, silica fibers, metal (stainless steel, aluminum, titanium, copper, etc.) fibers, carbon black, silica, glass beads, silicates (calcium silicate, talc, clay, etc.), metal oxides (iron oxide, titanium oxide, alumina, etc.), metal sulfates (calcium sulfate, barium sulfate), and various metal (magnesium, silicon, aluminum, titanium, copper, etc.) powders, mica, and glass flakes.

[0075] Examples of lubricants include waxes (such as carnauba wax), higher fatty acids (such as stearic acid), higher alcohols (such as stearyl alcohol), and higher fatty acid amides (such as stearic acid amide).

[0076] Examples of plasticizers include aromatic carboxylic acid esters (such as dibutyl phthalate), aliphatic carboxylic acid esters (such as methylacetyl ricinolate), aliphatic dicarboxylic acid esters (such as adipic acid-propylene glycol polyesters), aliphatic tricarboxylic acid esters (such as triethyl citrate), phosphate triesters (such as triphenyl phosphate), epoxy fatty acid esters (such as epoxybutyl stearate), and petroleum resins.

[0077] Examples of release agents include lower (C1-C4) alcohol esters of higher fatty acids (such as butyl stearate), polyhydric alcohol esters of fatty acids (C4-C30) (such as hydrogenated castor oil), glycol esters of fatty acids, and liquid paraffin.

[0078] Known antioxidants can be used as antioxidants. Specifically, these include phenolic antioxidants (e.g., 2,6-di-t-butyl-4-methylphenol), polycyclic phenolic antioxidants (e.g., 2,2'-methylenebis(4-methyl-6-t-butylphenol)), phosphorus-based antioxidants (e.g., tri(2,4-di-t-butylphenyl)phosphate, tetrakis(2,4-di-t-butylphenyl)-4,4-biphenylenediphosphonate), sulfur-based antioxidants (e.g., dilauryl thiodipropionate), amine-based antioxidants (e.g., N,N-diisopropyl-p-phenylenediamine), and lactone-based antioxidants.

[0079] Examples of flame retardants include organic flame retardants (nitrogen-containing, sulfur-containing, silicon-containing, phosphorus-containing, etc.) and inorganic flame retardants (antimony trioxide, magnesium hydroxide, zinc borate, red phosphorus, etc.).

[0080] Examples of UV absorbers include benzotriazole-based, benzophenone-based, salicylic acid-based, and acrylate-based UV absorbers. Examples of antibacterial agents include quaternary ammonium salts, pyridine compounds, organic acids, organic acid esters, halogenated phenols, and organic iodine.

[0081] Examples of surfactants include nonionic, anionic, cationic, or amphoteric surfactants. Examples of nonionic surfactants include polyethylene glycol-type nonionic surfactants such as higher alcohol ethylene oxide adducts, fatty acid ethylene oxide adducts, higher alkylamine ethylene oxide adducts, and polypropylene glycol ethylene oxide adducts; polyhydric alcohol-type nonionic surfactants such as fatty acid esters of polyethylene oxide and glycerin, fatty acid esters of pentaerythritol, fatty acid esters of sorbitol or sorbitan, alkyl ethers of polyhydric alcohols, and aliphatic amides of alkanolamines. Examples of anionic surfactants include sulfate ester salts such as alkali metal salts of higher fatty acids, sulfonates such as alkylbenzene sulfonates, alkyl sulfonates, and paraffin sulfonates, and phosphate ester salts such as higher alcohol phosphate ester salts. Examples of cationic surfactants include quaternary ammonium salts such as alkyltrimethylammonium salts. Examples of amphoteric surfactants include amino acid-type amphoteric surfactants such as higher alkylaminopropionates, and betaine-type amphoteric surfactants such as higher alkyldimethyl betaine and higher alkylhydroxyethyl betaine.

[0082] Examples of antistatic agents include the surfactants, fatty acid esters, and polymeric antistatic agents mentioned above. Examples of fatty acid esters include esters of stearic acid and oleic acid, and examples of polymeric antistatic agents include polyether ester amides.

[0083] Examples of heat-resistant stabilizers include conventionally known stabilizers such as amine-based stabilizers, phenol-based stabilizers, and sulfur-based stabilizers. Specifically, examples include aromatic secondary amine stabilizers such as phenylbutylamine and N,N'-di-2-naphthyl-p-phenylenediamine; phenolic stabilizers such as dibutylhydroxytoluene and tetrakis[methylene(3,5-di-t-butyl-4-hydroxy)hydrocinnamate]methane and octadecyl 3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate; thioether stabilizers such as bis[2-methyl-4-(3-n-alkylthiopropionyloxy)-5-t-butylphenyl]sulfide; dithiocarbamate stabilizers such as dibutyldithiocarbamate nickel; 2-mercaptobenzoylimidazole and zinc salts of 2-mercaptobenzoylimidazole; and sulfur-based stabilizers such as dilaurylthiodipropionate and distearylthiodipropionate. These stabilizers may be used individually or in combination of two or more.

[0084] For example, organic peroxides are used as crosslinking agents. Examples of organic peroxides include dicumyl organic peroxide, di-tert-butyl organic peroxide, 2,5-dimethyl-2,5-di-(tert-butylperoxy)hexane, 2,5-dimethyl-2,5-di-(tert-butylperoxy)hexine-3,1,3-bis(tert-butylperoxyisopropyl)benzene, 1,1-bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane, n-butyl-4,4-bis(tert-butylperoxy)valerate, benzoyl organic peroxide, p-chlorobenzoyl peroxide, 2,4-dichlorobenzoyl organic peroxide, tert-butylperoxybenzoate, tert-butylperbenzoate, tert-butylperoxyisopropyl carbonate, diacetyl organic peroxide, lauroyl organic peroxide, and tert-butylcumyl organic peroxide.

[0085] The organic peroxide is used in a ratio of preferably 0.05 to 10 parts by mass per 100 parts by mass of the total amount of the polymethylpentene resin and other polymers.

[0086] In crosslinking treatment with organic peroxides, peroxy crosslinking aids such as sulfur, p-quinone dioxime, p,p'-dibenzoylquinone dioxime, N-methyl-N-4-dinitrosoaniline, nitrosobenzene, diphenylguanidine, and trimethylolpropane-N,N'-m-phenylenedimaleimide can be incorporated, or polyfunctional methacrylate monomers such as divinylbenzene, triallyl cyanurate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, polyethylene glycol dimethacrylate, trimethylolpropane trimethacrylate, and allyl methacrylate, or polyfunctional vinyl monomers such as vinyl butyrate and vinyl stearate can be incorporated.

[0087] By using the above-mentioned compounds, a uniform and mild crosslinking reaction can be expected. Divinylbenzene is particularly suitable. Divinylbenzene is easy to handle, has good compatibility with polymers, and has the effect of solubilizing organic peroxides, acting as a dispersant for organic peroxides. As a result, a homogeneous crosslinking effect can be obtained, and a dynamically heat-treated product with a good balance of fluidity and physical properties can be obtained.

[0088] The above crosslinking aid is used in a ratio of preferably 0.05 to 10 parts by mass per 100 parts by mass of the total amount of the polymethylpentene resin and other polymers.

[0089] The member (2) of this disclosure comprises a resin (hereinafter also referred to as "resin (2)") having a melt flow rate of 0.1 to 500 g / 10 min, a melting point of 180 to 250°C, and a load deflection temperature of 80°C or higher at a load of 0.45 MPa. Preferably, at least a portion of the part of the member that comes into contact with a corrosive substance contains resin (2), more preferably, all of the part that comes into contact with a corrosive substance contains resin (2), and even more preferably, all of the part that comes into contact with a corrosive substance consists solely of resin (2).

[0090] The above resin (2) has a melt flow rate of 0.1 g / 10 min or more, preferably 1 g / 10 min or more, more preferably 8 g / 10 min or more, even more preferably 15 g / 10 min or more, and even more preferably 20 g / 10 min or more. Furthermore, the above resin (2) has a melt flow rate of 500 g / 10 min or less, preferably 200 g / 10 min or less, more preferably 100 g / 10 min or less, and even more preferably 30 g / 10 min or less. The above MFR is a value obtained in accordance with ASTM D1238 using a melt indexer as the mass of polymer flowing out per 10 minutes (g / 10 min) at 260°C and a load of 5 kg.

[0091] The above resin (2) has a melting point of 180°C or higher, but is preferably 200°C or higher, more preferably 210°C or higher, even more preferably 215°C or higher, even more preferably 220°C or higher, even more preferably 225°C or higher, and even more preferably 230°C or higher. In addition, the above resin (2) has a melting point of 250°C or lower, but is preferably 245°C or lower. The above melting point is the temperature corresponding to the maximum value in the heat of fusion curve when the temperature is increased for the second time at a rate of 10°C / min using a differential scanning calorimeter (DSC).

[0092] The resin (2) described above has a load deflection temperature of 80°C or higher at a load of 0.45 MPa, but it is preferably 83°C or higher, more preferably 86°C or higher, even more preferably 90°C or higher, even more preferably 93°C or higher, and even more preferably 96°C or higher. It may also be 120°C or lower, or 110°C or lower. The load deflection temperature described above is measured at a load of 0.45 MPa in accordance with JIS K7191.

[0093] As the resin (2) mentioned above, the polymethylpentene resin described above can be suitably used.

[0094] The components of this disclosure may contain other components as needed. These components include various known additives such as antioxidants, stabilizers, antistatic agents, lubricants, mold release agents, ultraviolet absorbers, dyes and pigments, reinforcing materials (e.g., glass fiber fillers, carbon fiber fillers), drip inhibitors, fillers, flame retardants, and elastomers for improving impact resistance.

[0095] Using antioxidants as other components is one preferred embodiment. Examples of antioxidants include amine-based antioxidants and phenol-based antioxidants as primary antioxidants, and one or more of these can be used. Examples of secondary antioxidants include sulfur-based antioxidants and phosphorus-based antioxidants. It is preferable to use primary and secondary antioxidants in combination, and a combination of phenol-based and phosphorus-based antioxidants is particularly preferred.

[0096] The antioxidant content is preferably 0 parts by mass or more, more preferably 0.1 parts by mass or more, particularly preferably 0.2 parts by mass or more, and preferably 5 parts by mass or less, and particularly preferably 3 parts by mass or less, per 100 parts by mass of the polymethylpentene resin or resin (2). A content exceeding 5 parts by mass is undesirable because it causes bleeding.

[0097] The other components mentioned above can be added insofar as they do not impair the effects of the present disclosure. The content of the other components is preferably 20% by mass or less, more preferably 10% by mass or less, even more preferably 5% by mass or less, and even more preferably 3% by mass or less, relative to the polymethylpentene resin or resin (2), and may be 0.01% by mass or more.

[0098] The components of this disclosure come into contact with corrosive substances. Part of the component may come into contact with the corrosive substance, or the entire component may come into contact with the corrosive substance.

[0099] The corrosive substance mentioned above may be any substance that is corrosive, and may be a substance that is corrosive to rubber, resin, metal, etc. Furthermore, the corrosive substance may be a liquid, solid, or gas. In terms of exhibiting the effects of this disclosure more significantly, it is preferable that it be a fluid, and more preferably a liquid.

[0100] Furthermore, it is preferable that the corrosive substance is one that has been used in the treatment of objects to be treated with the corrosive substance. Examples of such corrosive substances include chemical solutions used in chemical treatment, which may be chemical solutions recovered after treatment, or they may be waste liquids.

[0101] The above-mentioned corrosive substance has an oxidation-reduction potential (vsNHE) of preferably -2.0V or higher, more preferably -1.0V or higher, even more preferably -0.5V or higher, and also preferably 3.0V or lower, more preferably 2.5V or lower, and even more preferably 2.1V or lower.

[0102] Examples of the corrosive substances mentioned above include acidic substances, basic substances, oxidizing substances, organic solvents, and saltwater.

[0103] Examples of the above-mentioned acidic substance include chemical solutions with a pH of 6 or less, preferably 5 or less, and more preferably 4 or less. The lower limit of the above pH is not particularly limited and may be 0. Specific examples of the above-mentioned acidic substance include acids such as sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, and hydrochloric acid; mixtures of these acids; and mixtures of these acids with other substances (such as hydrogen peroxide). Among these, at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, mixed acids of hydrofluoric acid and nitric acid, mixed chemical solutions of hydrogen peroxide solution and hydrochloric acid, and mixed chemical solutions of hydrogen peroxide solution and sulfuric acid is preferred, and at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, mixed acids of hydrofluoric acid and nitric acid, mixed chemical solutions of hydrogen peroxide solution and hydrochloric acid, and mixed chemical solutions of hydrogen peroxide solution and sulfuric acid is more preferred.

[0104] Examples of the basic substance include chemical solutions with a pH of 8 or higher, preferably 9 or higher, and more preferably 10 or higher. The upper limit of the pH is not particularly limited and may be 14. Specifically, examples of the basic substance include TMAH([(CH ３ ) ４ N] ＋ [OH] － Examples include bases such as sodium hydroxide aqueous solution and ammonia; mixtures of these bases; and mixtures of these bases with other substances (such as hydrogen peroxide). In particular, TMAH ([(CH ３ ) ４ N]＋ [OH] － Preferably, at least one selected from the group consisting of ammonia water, sodium hydroxide aqueous solution, and a mixed chemical solution of hydrogen peroxide water and ammonia water.

[0105] Examples of basic substances include chemical solutions with an oxidation-reduction potential (vsNHE) of -2.0 to 0V, preferably -1.0 to 0V, and more preferably -0.5 to 0V. Specifically, TMAH([(CH ３ ) ４ N] ＋ [OH] － Examples include basic substances such as sodium hydroxide aqueous solution, ammonia water, hydroxylamine, hydrazine, hydrogen water, and sodium sulfite; and mixtures of these basic substances with other substances. In particular, TMAH ([(CH ３ ) ４ N] ＋ [OH] － Preferably, at least one selected from the group consisting of ammonia water, sodium hydroxide aqueous solution, and a mixed chemical solution of hydrogen peroxide water and ammonia water.

[0106] Examples of the above-mentioned oxidizing substances include chemical solutions with an oxidation-reduction potential (vsNHE) of 0 to 3.0 V, preferably 0.5 to 2.5 V, and more preferably 1.0 to 2.1 V. Specifically, examples include sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide; and mixtures of these oxidizing substances with other substances (such as hydrofluoric acid). Among these, at least one selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is preferred, and at least one selected from the group consisting of nitric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is more preferred.

[0107] Examples of the above organic solvents include esters such as methyl acetate, ethyl acetate, propyl acetate, n-butyl acetate, and tert-butyl acetate; ketones such as acetone, methyl ethyl ketone, and cyclohexanone; aliphatic hydrocarbons such as hexane, cyclohexane, octane, nonane, decane, undecane, dodecane, and mineral spirits; aromatic hydrocarbons such as benzene, toluene, xylene, naphthalene, and solvent naphtha; alcohols such as methanol, ethanol, isopropyl alcohol, tert-butanol, and ethylene glycol monoalkyl ethers; cyclic ethers such as tetrahydrofuran, tetrahydropyran, and dioxane; nitriles such as acetonitrile and propionitrile; amides such as dimethyl sulfoxide, N,N-dimethylformamide, and N,N-dimethylacetamide; halogenated hydrocarbons such as dichloromethane, dichloroethane, and chloroform, and mixtures thereof. Among these, alcohols are preferred, and isopropyl alcohol is more preferred.

[0108] The corrosive substance is preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents, and brine; more preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, and organic solvents; and even more preferably at least one selected from the group consisting of acidic substances and basic substances.

[0109] The corrosive substance may also preferably be at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, ammonia water, a mixed chemical solution of hydrogen peroxide and ammonia water, isopropyl alcohol, and brine. More preferably, at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, a mixed chemical solution of hydrogen peroxide and ammonia water, and isopropyl alcohol is preferred. Even more preferably, at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, and TMAH is preferred.

[0110] The member (1) of this disclosure may have only the portion (layer) containing the polymethylpentene resin, or it may have the portion (layer) containing the polymethylpentene resin and the other portion (layer). From the viewpoint of ensuring corrosion resistance, it is preferable that at least a part of the surface that comes into contact with the corrosive substance is composed of the portion (layer) containing the polymethylpentene resin, and it is more preferable that the entire surface that comes into contact with the corrosive substance is composed of the portion (layer) containing the polymethylpentene resin.

[0111] The member (2) of this disclosure may have only a portion (layer) containing the resin (2), or it may have a portion (layer) containing the resin (2) and other portions (layers). From the viewpoint of ensuring corrosion resistance, it is preferable that at least a part of the surface that comes into contact with the corrosive substance is composed of a portion (layer) containing the resin (2), and it is more preferable that the entire surface that comes into contact with the corrosive substance is composed of a portion (layer) containing the resin (2).

[0112] The components of this disclosure are sealing components. Examples of sealing components include O-rings, square rings, D-rings, sealing materials, oil seals, mechanical seals, labyrinth seals, stationary packings, dynamic packings, gland packings, U-packings, V-packings, L-packings, gaskets, rubber gaskets, resin gaskets, liquid gaskets, paper gaskets, resin gaskets, metal gaskets, washers, and the like.

[0113] While there are no particular limitations on the O-ring and sealing material, the material properties that are required include excellent elasticity, good compression set, high wear resistance, excellent heat resistance, and resistance to the liquids and gases to which it is applied, as well as a long lifespan. In particular, O-rings used in semiconductor manufacturing equipment are used in harsh chemical environments, such as being exposed to various plasmas, and therefore high heat resistance, chemical resistance, and plasma resistance are often required. The inner diameter is preferably 1 mm or more, and more preferably 5 mm or more. The wire diameter is preferably 1 mm or more, more preferably 2 mm or more, and preferably 20 mm or less, and more preferably 12 mm or less. The application is preferably in semiconductor manufacturing equipment, etc. It is particularly preferred for use in sealing stationary (fixed) parts.

[0114] While there are no particular limitations on the type of packing or gasket, it is often required to have good compression set and excellent wear resistance. To prevent leakage, heat resistance, cold resistance, pressure resistance, and chemical resistance may also be required. The inner diameter is preferably 10 mm or more, more preferably 15 mm or more, and preferably 2000 mm or less, and more preferably 1600 mm or less. The thickness is preferably 1.0 mm or more, more preferably 1.5 mm or more, and preferably 5 mm or less, and more preferably 4 mm or less. The application is preferably in semiconductor manufacturing-related equipment, etc. It is particularly preferred for use in sealing stationary (fixed) parts.

[0115] While the washer is not particularly limited, it is intended for use in cleanrooms and similar environments, and therefore durability, corrosion resistance, and rust prevention may be required. The inner diameter is preferably 0.5 mm or more, more preferably 1 mm or more, and preferably 100 mm or less, and more preferably 90 mm or less. The thickness is preferably 0.1 mm or more, more preferably 0.3 mm or more, and preferably 15 mm or less, and more preferably 12 mm or less. The application area is preferably semiconductor manufacturing-related equipment, etc. It is particularly preferable to use it in stationary (fixed) parts.

[0116] The components of this disclosure can be suitably used in semiconductor manufacturing equipment. In this specification, semiconductor manufacturing equipment means semiconductor manufacturing equipment and related equipment. Related equipment for semiconductor manufacturing equipment includes equipment used in semiconductor manufacturing but not mounted on the semiconductor manufacturing equipment.

[0117] The semiconductor manufacturing equipment mentioned above includes photolithography equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, discam equipment), thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect correction equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching equipment Equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high-current ion implantation equipment, medium-current ion implantation equipment, high-energy ion implantation equipment), thin film deposition equipment, CVD equipment (high-pressure CVD equipment, SACVD, reduced-pressure CVD, plasma CVD equipment, metal CVD equipment, mist CVD equipment, ALD equipment), sputtering equipment, and other thin film deposition equipment (vacuum deposition equipment, silicon epitaxial growth equipment) Examples include compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment, inspection and evaluation equipment (Auger electron spectrometer), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machine, bump plating equipment, back grinder tape application machine, back grinder, back grinder tape peeling machine), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonding equipment, outer lead bonding equipment, flip-chip bonding equipment), packaging equipment (molding equipment, deburring equipment, soldering equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (provider), handler, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (cold and heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing system, various life testing equipment).Related equipment for semiconductor manufacturing includes various transport devices (in-process wafer transport devices, inter-process wafer transport devices, stockers), pure water and chemical solution equipment (pure water production devices, ultrafiltration devices, reverse osmosis devices, sterilization devices, chemical supply devices, slurry supply devices, chemical purification devices, wastewater treatment devices), various gas equipment (gas generators, gas purification devices, gas mixing devices, gas detection devices, exhaust gas treatment devices), cleanroom equipment (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying devices, flow control equipment, various taping devices, various packaging devices, measuring instruments for liquids and various gases).

[0118] In particular, semiconductor manufacturing equipment that uses corrosive substances within the device is not limited to, but from the perspective of utilizing its chemical resistance properties, photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), discam equipment), thin film formation / etching / cleaning and drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect correction equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment Preferably, the equipment includes (wet cleaning equipment, scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, reduced-pressure CVD, plasma CVD equipment, metal CVD equipment, mist CVD equipment, ALD equipment), other thin-film deposition equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (bump plating equipment), aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (various life testing equipment). As related equipment for semiconductor manufacturing equipment, the following are preferred: pure water and chemical solution systems (chemical supply systems, slurry supply systems, chemical purification systems, wastewater treatment systems), various gas systems (gas generators, gas purification systems, gas mixing systems, gas detection systems, exhaust gas treatment systems), cleanroom systems (thermal chambers, environmental testing systems), and other manufacturing-related equipment (various jig cleaning and drying systems, flow control equipment, various packaging systems, measuring instruments for liquids and various gases).

[0119] As semiconductor manufacturing-related equipment, at least one selected from the group consisting of mask and reticle manufacturing equipment, wafer manufacturing equipment, wafer processing equipment, assembly equipment, inspection equipment, and semiconductor manufacturing equipment-related equipment is preferred.

[0120] As the above-mentioned mask and reticle manufacturing apparatus, at least one selected from the group consisting of a photolithography process apparatus, a thin film formation / etching / cleaning and drying apparatus, and an inspection and evaluation apparatus is preferred. As the above-mentioned wafer manufacturing apparatus, a wafer processing apparatus is preferred. As the above-mentioned wafer process apparatus, at least one selected from the group consisting of a resist processing apparatus, an etching apparatus, a cleaning and drying apparatus, a heat processing apparatus, an ion implantation apparatus, a thin film formation apparatus, a CVD apparatus, a sputtering apparatus, an inspection and evaluation apparatus, a CMP apparatus, and an processing apparatus is preferred. As the above-mentioned assembly apparatus, at least one selected from the group consisting of a dicing apparatus, a bonding apparatus, and a packaging apparatus is preferred. As the above-mentioned inspection apparatus, at least one selected from the group consisting of a testing apparatus, a probing apparatus, a handler, an aging apparatus, a cold and heat testing apparatus, a temperature and humidity testing apparatus, a pressure cooker apparatus, a laser processing system, and a lifetime testing apparatus is preferred. The above-mentioned semiconductor manufacturing equipment-related equipment preferably includes at least one selected from the group consisting of conveying equipment, pure water / chemical solution equipment, gas equipment, cleanroom equipment, jig cleaning / drying equipment, flow control equipment, taping equipment, packaging equipment, and liquid / gas measuring equipment.

[0121] As the above photolithography process apparatus, at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), a baking apparatus, and a discam apparatus is preferred. As the above thin film formation, etching, cleaning, and drying apparatus, at least one selected from the group consisting of a vacuum deposition apparatus, a sputtering apparatus, a CVD apparatus, and a drying apparatus is preferred. As the above inspection and evaluation apparatus, a defect correction apparatus is preferred. As the above wafer processing apparatus, a wafer marking apparatus is preferred. As the above resist processing apparatus, at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, an ashing apparatus, and a baking apparatus is preferred. As the above etching apparatus, a dry etching apparatus is preferred. As the above cleaning and drying apparatus, at least one selected from the group consisting of a dry cleaning apparatus and a drying apparatus is preferred. As the above heat processing apparatus, at least one selected from the group consisting of an oxidation apparatus, a diffusion apparatus, and an annealing apparatus is preferred. As the above ion implantation apparatus, at least one selected from the group consisting of a high-current ion implantation apparatus, a medium-current ion implantation apparatus, and a high-energy ion implantation apparatus is preferred. As the CVD apparatus, at least one selected from the group consisting of high-pressure CVD apparatus, SACVD, reduced-pressure CVD, plasma CVD apparatus, metal CVD apparatus, mist CVD apparatus, and ALD apparatus is preferred. As the thin-film forming apparatus, at least one selected from the group consisting of vacuum deposition apparatus, silicon epitaxial growth apparatus, compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and plating apparatus is preferred. As the inspection and evaluation apparatus, Auger electron spectrometer is preferred. As the processing apparatus, at least one selected from the group consisting of wafer marking apparatus, back grinding machine, bump plating apparatus, back grinder tape application machine, back grinder, and back grinder tape peeling machine is preferred. As the dicing apparatus, at least one selected from the group consisting of dicing apparatus and wafer mounting apparatus is preferred.As the bonding apparatus, at least one selected from the group consisting of die bonding apparatus, hybrid bonding apparatus, wire bonding apparatus, inner lead bonding apparatus, outer lead bonding apparatus, and flip-chip bonding apparatus is preferred. As the packaging apparatus, at least one selected from the group consisting of molding apparatus, deburring apparatus, and soldering apparatus is preferred. As the testing apparatus, at least one selected from the group consisting of electron beam testing apparatus and laser beam testing apparatus is preferred. As the probing apparatus, a prober is preferred. As the aging apparatus, an aging apparatus, burn-in apparatus, IC insertion apparatus, and IC extraction apparatus are preferred. As the transport apparatus, at least one selected from the group consisting of in-process wafer transport apparatus, inter-process wafer transport apparatus, and stocker is preferred. As the pure water / chemical solution apparatus, at least one selected from the group consisting of pure water production apparatus, ultrafiltration apparatus, reverse osmosis apparatus, sterilization apparatus, slurry supply apparatus, chemical purification apparatus, and waste liquid treatment apparatus is preferred. The gas apparatus described above is preferably at least one selected from the group consisting of a gas generator, a gas purification device, a gas mixing device, and a gas detection device. The cleanroom apparatus described above is preferably at least one selected from the group consisting of a clean bench, a clean tunnel, a thermal chamber, an environmental testing device, an air shower, and a pass box.

[0122] As described above, the components of this disclosure can be suitably used as components for semiconductor manufacturing equipment (semiconductor manufacturing equipment and related equipment), and due to their excellent chemical resistance, they are particularly suitable as components constituting semiconductor manufacturing equipment in which chemicals are used, and especially as components that come into contact with chemicals.

[0123] The above-mentioned chemicals are not particularly limited, but examples include chemicals used in semiconductor manufacturing equipment. These chemicals can be used individually or in combination of two or more.

[0124] Specifically, the above-mentioned chemical is TMAH([(CH ３ ) ４ N]＋ [OH] － ), sodium hydroxide aqueous solution, sulfuric acid, isopropyl alcohol, hydrofluoric acid, hydrofluoric acid and nitric acid mixture, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ (O mixture), SC2 (HCl, H ２ O ２ and H ２ Examples include at least one selected from the group consisting of a mixture of O, phosphoric acid, and hydrochloric acid. Among these, TMAH, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM, SC1, SC2, phosphoric acid, and hydrochloric acid are preferred, and TMAH, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM, and hydrochloric acid are more preferred.

[0125] Other examples of the above-mentioned chemicals include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen / halogenated gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0126] Examples of silicon-based gases include monosilane, dichlorosilane, trichloride silane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of arsenic-based gases include arsine, arsenic(III) fluoride, arsenic(V) fluoride, arsenic(III) chloride, and arsenic(V) chloride. Examples of phosphorus-based gases include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of boron-based gases include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of metal hydride gases include hydrogen selenide, monogermane, hydrogen telluride, stivin, and tin hydride. Examples of metal alkyl gases include trialkylgallium and trialkylindium. Examples of the above-mentioned halogenated hydrocarbon gases include methane tetrafluoride, methane trifluoride, methane difluoride, propane hexafluoride, propane octafluoride, and cyclobutane octafluoride. Examples of the above-mentioned halogen and halogenated gases include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten (VI) fluoride, molybdenum (VI) fluoride, germanium tetrachloride, tin (IV) chloride, antimony (V) chloride, tungsten (VI) chloride, and molybdenum hexachloride. Examples of the above-mentioned nitrogen oxide gases include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, dinitrogen monoxide, monosilane, and cyclobutane octafluoride are preferred, and ammonia gas, nitrogen trifluoride, and dinitrogen monoxide are more preferred.

[0127] The components of this disclosure can be suitably used for medical applications, including, for example, the following: sealing components such as syringe seal caps, vial bottle seals, protective stoppers, and rubber stoppers; sealing materials for medical devices such as infusion bags, bottle caps, pre-filled syringes, and syringe rods; sealing materials for medical devices such as dialyzers; and so on. Among these, from the viewpoint of chemical resistance and heat resistance, they can be particularly suitably used as sealing materials for medical devices such as protective stoppers and syringe rods, and as sealing materials for medical devices.

[0128] The surface modulus of a test specimen (size: 10 mm x 50 mm x 2 mm) of the component of this disclosure is preferably 2.1 GPa or higher, more preferably 2.3 GPa or higher, and even more preferably 2.4 GPa or higher. There is no particular upper limit, but it is preferably 10 GPa or lower, and more preferably 5 GPa or lower. Components that satisfy these requirements have high repulsive force and high adhesion, and therefore exhibit excellent sealing properties.

[0129] When a test specimen of the component of this disclosure (size: 10 mm x 50 mm x 2 mm) is immersed in the following chemical solution for one week (168 hours), the surface modulus after immersion is preferably 2.0 GPa or higher, more preferably 2.2 GPa or higher, and even more preferably 2.4 GPa or higher. There is no particular upper limit, but it is preferably 10 GPa or lower, and more preferably 5 GPa or lower. Components that satisfy these requirements have high repulsive force and high adhesion, resulting in excellent sealing properties, and this effect can be maintained. (Chemical solution) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C)

[0130] When a test specimen of the component of this disclosure (size: 10 mm x 50 mm x 2 mm) is immersed in the following chemical solution for one week (168 hours), the rate of change in surface modulus before and after immersion is preferably 0.5% or less, more preferably 0.4% or less, even more preferably 0.3% or less, and even more preferably 0.2% or less. The lower limit is not particularly limited, but 0% is most preferable. When the rate of change in surface modulus is within the above range, the sealing performance is less likely to deteriorate, and retightening becomes unnecessary. (Chemical solution) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) Note that the surface modulus before and after immersion are measured, and the difference (absolute value) is divided by the value before immersion to obtain the rate of change. The above surface modulus is measured using an indentation hardness tester (ENT-2100, manufactured by Elionix) under the conditions of an indentation load of 100 mN and a step interval of 20 mS.

[0131] The member of this disclosure preferably has a water contact angle of 80° or more, more preferably 85° or more, even more preferably 90° or more, and even more preferably 95° or more. Having a water contact angle within the above range allows for high liquid repellency, making it difficult for chemicals to penetrate, thereby suppressing deterioration of the member and maintaining sealing performance. The upper limit is not particularly limited, but may be 130° or less, or 120° or less. The water contact angle is determined by measuring the water contact angle of the member's surface using a fully automatic contact angle meter, DropMaster 701 (manufactured by Kyowa Interface Science Co., Ltd.).

[0132] The component of this disclosure preferably has a static friction coefficient of 0.4 or higher, more preferably 0.45 or higher, and even more preferably 0.5 or higher. The upper limit is not particularly limited and may be 0.9 or lower. Furthermore, the component of this disclosure preferably has a dynamic friction coefficient of 0.3 or higher, more preferably 0.35 or higher, and even more preferably 0.4 or higher. The upper limit is not particularly limited and may be 0.8 or lower. When the dynamic friction coefficient and static friction coefficient are within the above range, the friction coefficient is high, allowing for close contact with the seating surface (jointing surface) and good sealing performance. The dynamic friction coefficient and static friction coefficient are measured using a friction measuring instrument Tribomaster TL201Ts (manufactured by Trinity Lab Co., Ltd.) at room temperature, under conditions of a load of 300 gf and a scanning speed of 100 mm / second, by contacting a metal ball.

[0133] The members of this disclosure preferably have a tensile elongation at break of 10% or more, more preferably 15% or more, and even more preferably 20% or more. A higher tensile elongation at break is preferable, and there is no upper limit; it may be 100% or more. Having a tensile elongation at break within the above range makes the members of this disclosure less likely to break even if deformed by some kind of impact. The above tensile elongation at break is a value measured by autograph at a test speed of 10 mm / min in accordance with ASTM D 638.

[0134] The loss tangent (tanδ) of a test specimen (size: 10 mm × 50 mm × 0.5 mm) of the component of this disclosure during dynamic viscoelasticity measurement at 50°C and 200°C is preferably 0.20 or less, more preferably 0.17 or less, even more preferably 0.15 or less, and may also be 0.01 or more, 0.02 or more, 0.07 or more, or 0.09 or more. Because the change in loss tangent (tanδ) is small even at high temperatures, the component of this disclosure can be used at high temperatures.

[0135] The difference between the loss tangent (tanδ) of a test specimen (size: 10 mm × 50 mm × 0.5 mm) of the component disclosed herein during dynamic viscoelasticity measurement at 50°C and the loss tangent (tanδ) of a test specimen during dynamic viscoelasticity measurement at 200°C is preferably 0.020 or less, more preferably 0.016 or less, even more preferably 0.010 or less, even more preferably 0.005 or less, and may also be 0.001 or more. Because the change in loss tangent (tanδ) is small even at high temperatures, the component disclosed herein can be used even at high temperatures.

[0136] When a test specimen (size: 10 mm x 10 mm x 2 mm) of the aforementioned member is subjected to a compression creep test at 20 MPa for 3 days (72 hours), it is preferable that the change in thickness of the test specimen before and after the test is 25% or less. Members that satisfy this requirement have excellent sealing properties. The above change in thickness is preferably 20% or less, more preferably 10% or less, even more preferably 8% or less, even more preferably 5% or less, even more preferably 3% or less, and even more preferably 2% or less. Ideally (most preferably) it is 0%. The change in thickness is calculated by measuring the thickness of the test specimen before and after the test, and dividing the difference (absolute value) by the value before the test. The change in thickness before and after the above compression creep test can be determined by the method described in the examples.

[0137] The present disclosure describes a component in which a test specimen (size: 10 mm x 50 mm x 2 mm) of the component is immersed in 3.6% by mass hydrochloric acid at 23°C for one week (168 hours). The amount of metal leached from the surface of the test specimen of the component was 20 μg / m² for each of the 15 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb). ２ The following is preferable. The amount of metal eluted is more preferably 10 μg / m³. ２ More preferably, 7 μg / m³ ２ More preferably, 5 μg / m ２ More preferably, 3 μg / m ２ More preferably, 2 μg / m ２ The following, and more preferably 1 μg / m³ ２ The following, and more preferably 0.5 μg / m² ２ The following, and more preferably 0.1 μg / m³ ２ The following applies. The lower limit is not particularly limited, 0 μg / m³ ２ This is the most preferable. The amount of metal eluted can be determined by the method described in the examples.

[0138] The present disclosure describes a component in which, when a test specimen (size: 10 mm x 50 mm x 2 mm) of the component is immersed in 3.6% by mass hydrochloric acid at 23°C for one week (168 hours), the total amount of metals leached from the surface of the test specimen of the component is 20 μg / m² per surface area of ​​the test specimen. ２ The following is preferable. Components that satisfy this requirement have excellent cleanliness. The total amount of metal elution is more preferably 15 μg / m³. ２ More preferably, 10 μg / m³ ２ More preferably, 5 μg / m ２ More preferably, 3 μg / m ２ More preferably, 2 μg / m ２ The following, and more preferably 1 μg / m³ ２ The following applies. The lower limit is not particularly limited, but is 0.1 μg / m³. ２The above amounts may be used. The amount of metal eluted can be determined by the method described in the examples.

[0139] Test specimens of the component of this disclosure (size: 10 mm x 50 mm x 2 mm) are immersed in each of the 10 chemical solutions (1) to (10) described later for one week (168 hours), and it is preferable that the relative value of the mass after immersion, with the mass before immersion set to 100, is between 95 and 106. Component that satisfies this requirement exhibits excellent corrosion resistance. The above relative value is more preferably 106 or less, even more preferably 105 or less, even more preferably 104 or less, even more preferably 96 or more, even more preferably 97 or more, and even more preferably 98 or more. Ideally (most preferably) it is 100.

[0140] The member of this disclosure is preferably such that when a test piece of the member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the 10 chemical solutions (1) to (10) described later for one week (168 hours), and the average value of the relative mass after immersion, with the mass before immersion set to 100, is calculated to be between 95 and 105. Members that satisfy this requirement have excellent corrosion resistance. The above average value is more preferably 97 or higher, even more preferably 98 or higher, even more preferably 99 or higher, even more preferably 103 or lower, even more preferably 102 or lower, and even more preferably 101 or lower. Ideally (most preferably) it is 100.

[0141] The members of this disclosure are preferably such that the standard deviation of the relative mass after immersion, calculated by immersing a test specimen (size: 10 mm x 50 mm x 2 mm) of the member in each of the 10 chemical solutions (1) to (10) described later for one week (168 hours), with the mass before immersion set to 100, is 20 or less. Members that satisfy this requirement have excellent corrosion resistance. The above standard deviation is more preferably 10 or less, even more preferably 5.0 or less, even more preferably 2.0 or less, even more preferably 1.7 or less, even more preferably 1.5 or less, and even more preferably 1.3 or less. Ideally (most preferably) it is 0.

[0142] The chemical solution used for immersing the above test specimens is as follows: (1) 25% by mass TMAH ([(CH ３ ) ４ N] ＋ [OH] － (1) 98% by mass sulfuric acid (90°C) (2) 100% by mass isopropyl alcohol (80°C) (4) 49% by mass hydrofluoric acid (70°C) (5) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:5) (20°C) (6) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) (7) SPM (a mixture of 98% by mass sulfuric acid and 30-36% by mass hydrogen peroxide in a volume ratio of 2:1) (80°C) (8) SC1 (a mixture of 25-28% by mass ammonia water, 30-36% by mass hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) (9) SC2 (a mixture of 35-37% by mass hydrochloric acid, 30-36% by mass hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) (10) 85% by mass phosphoric acid (80°C)

[0143] The number of particles per 1 mL of ultrapure water released from the component of this disclosure is preferably within the following ranges for each particle size: For particles with a particle size of 0.5 μm or larger, the number of particles is preferably 10 or less, more preferably 7 or less, even more preferably 5 or less, even more preferably 3 or less, and even more preferably 1 or less. For particles with a particle size of 0.3 μm or larger, the number of particles is preferably 30 or less, more preferably 20 or less, even more preferably 15 or less, even more preferably 10 or less, and even more preferably 5 or less. For particles with a particle size of 0.2 μm or larger, the number of particles is preferably 70 or less, more preferably 50 or less, even more preferably 30 or less, even more preferably 20 or less, and even more preferably 10 or less. For particles with a particle size of 0.1 μm or larger, the number of particles is preferably 500 or less, more preferably 300 or less, even more preferably 200 or less, even more preferably 100 or less, and even more preferably 50 or less. It may also be 0 or 1 or more. The above particle count is determined by completely immersing the material in ultrapure water (resistivity: ≥ 18.0 MΩ·cm), storing it for 24 hours, and then analyzing the immersion solution using a particle counter.

[0144] The material disclosed herein has a total organic carbon (TOC) elution amount of 40,000 μg / m³ leached from its surface into ultrapure water. ２ Preferably, it is 20,000 μg / m³ ２ It is more preferable that the following conditions are met: 10,000 μg / m³ ２ It is even more preferable that the following conditions apply: 5000 μg / m ２ It is even more preferable that the following conditions be met: 4100 μg / m² ２ It is even more preferable that the following conditions are met, and also 100 μg / m³ ２ It may be greater than or equal to 1000 μg / m². ２ The above amounts may also be used. The amount of total organic carbon (TOC) eluted is determined in accordance with SEMI F57 "Specifications for polymer materials and components used in ultrapure water and chemical supply systems," by placing the component in a PFA container, fully immersing it in ultrapure water, and storing it at 85±3°C for 7 days (168 hours). The eluate is then measured for TOC concentration using a TOC meter.

[0145] The components of this disclosure can be manufactured, for example, by molding a material containing the above-mentioned resin and, if necessary, other components described above. The molding method is not particularly limited, and known methods such as extrusion molding, injection molding, transfer molding, blow molding, inflation molding, and compression molding can be employed.

[0146] This disclosure also relates to semiconductor manufacturing equipment equipped with a sealing component containing polymethylpentene resin. The polymethylpentene resin described above can be suitably used, and other components that may be included in the component can also be those described above.

[0147] The semiconductor manufacturing equipment of this disclosure is preferably at least one selected from the group consisting of mask and reticle manufacturing equipment, wafer manufacturing equipment, wafer processing equipment, assembly equipment, inspection equipment, and semiconductor manufacturing equipment-related equipment, as described above. The preferred forms of each device are as described above.

[0148] The semiconductor manufacturing apparatus of this disclosure preferably uses corrosive substances within the apparatus. Furthermore, it is more preferable that the semiconductor manufacturing apparatus of this disclosure uses corrosive substances within the apparatus and that the corrosive substances come into contact with the above-mentioned components.

[0149] Although embodiments have been described above, it should be understood that various modifications to the form and details are possible without departing from the spirit and scope of the claims.

[0150] The present disclosure will now be further described with reference to examples, but the present disclosure is not limited to these examples.

[0151] Various physical properties were measured using the following method.

[0152] <MFR> Measured in accordance with ASTM D1238 under conditions of 260°C and a load of 5 kg.

[0153] <Weight-average molecular weight> Measured by polystyrene equivalent using gel permeation chromatography (GPC, column temperature: 140°C, eluent: 1,2,4-trichlorobenzene).

[0154] <Metal Content> 0.5 g of the resin samples used in the examples and comparative examples were washed with 10 mL of ultrapure water and ashed at 600°C for 5 hours using a muffle furnace (FUW222PB, Advantec Toyo Co., Ltd.). The ashed samples were dissolved in 10 mL of 5% by mass nitric acid, and the metal concentrations of 17 elements (Li, Na, Mg, Al, K, Ca, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd, Ba, Pb) were measured using ICP-MSI (Agilent 5900, Agilent Technologies) to determine the metal content.

[0155] <Metal Leaching Test> The resin sheets obtained in the examples and comparative examples were cut to a size of 10 mm x 50 mm x 2 mm to serve as test specimens. As a pre-cleaning step, the test specimens were immersed in 3.6% by mass hydrochloric acid for 1 hour, and then rinsed with pure water. After that, the test specimens were immersed in 100 mL of 3.6% by mass hydrochloric acid at 23°C. One week (168 hours) after the start of immersion, a portion of each immersion solution was withdrawn, and the metal concentrations of 15 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) were measured using ICP-MSI (Agilent 8900, manufactured by Agilent Technologies) to determine the amount of metal leached.

[0156] <Chemical Resistance (Corrosion Resistance) Test> The resin sheets obtained in the examples and comparative examples were cut to a size of 10 mm x 50 mm x 2 mm to serve as test specimens. The test specimens were dried at 60°C for 2 hours. After drying, the mass of the test specimens was measured under room temperature (20°C) conditions before immersion. The measured test specimens were then completely immersed in each of the chemical solutions (1) to (10) below and held for 1 week (168 hours). After holding, the test specimens were washed with pure water, the water droplets on the surface were wiped off, and they were dried at 60°C for 12 hours. The mass of the test specimens after immersion was measured under room temperature (20°C) conditions. From the measured masses before and after immersion, the relative value of the mass after immersion was calculated with the mass before immersion set to 100. In addition, the mean and standard deviation of the post-immersion mass (relative value) for the 10 types (1) to (10) were determined. (Chemical Solutions) (1) 25% by mass TMAH ([(CH ３ ) ４ N] ＋ [OH] －(2) 98% by mass sulfuric acid (90°C) Oxidation-reduction potential (vs NHE): 1.1V (3) 100% by mass isopropyl alcohol (80°C) (4) 49% by mass hydrofluoric acid (70°C) (5) Mixed acid of hydrofluoric acid and nitric acid (mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:5) (20°C) (6) Mixed acid of hydrofluoric acid and nitric acid (mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) (7) SPM (mixture of 98% by mass sulfuric acid and 30-36% by mass hydrogen peroxide in a volume ratio of 2:1) (80°C) Oxidation-reduction potential (vs NHE): 1.8V (8) SC1 (a mixture of 25-28% by mass aqueous ammonia, 30-36% by mass aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) Redox potential (vs NHE): 1.2V (9) SC2 (a mixture of 35-37% by mass hydrochloric acid, 30-36% by mass aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) Redox potential (vs NHE): 1.6V (10) 85% by mass phosphoric acid (80°C)

[0157] <Loss Tangent (tanδ)> The resin sheets obtained in the examples and comparative examples were cut to a size of 10 mm × 50 mm × 0.5 mm to be used as test specimens. The loss tangent at each temperature was measured using an HR20 (manufactured by T.A. Instrument Japan Co., Ltd.) under the conditions of a heating rate of 2°C / min and a frequency of 1 Hz.

[0158] <Temperature Deflection under Load> Measured under a load of 0.45 MPa in accordance with JIS K7191.

[0159] <Tensile Elongation at Breaking> This value was measured using an autograph at a test speed of 10 mm / min, in accordance with ASTM D 638.

[0160] <Surface Modulus> The resin sheets obtained in the examples and comparative examples were cut to a size of 10 mm x 50 mm x 2 mm to serve as test specimens. Using an indentation hardness tester (ENT-2100, manufactured by Elionix), the surface modulus of the test specimens before immersion was measured under conditions of an indentation load of 100 mN and a step interval of 20 mS. Another test specimen was dried at 60°C for 2 hours. The dried test specimen was completely immersed in the above chemical solution (6) and held for 1 week (168 hours). After holding, the test specimen was washed with pure water, the water droplets on the surface were wiped off, and it was dried at 60°C for 12 hours. The surface modulus of the test specimen after immersion was measured. The rate of change in modulus was calculated from the measured surface modulus before and after immersion.

[0161] <Water Contact Angle> The water contact angle of the surface of the resin sheets obtained in the examples and comparative examples was measured and determined using a fully automatic contact angle meter DropMaster701 (manufactured by Kyowa Interface Science).

[0162] <Static friction coefficient, kinetic friction coefficient> Using a friction measuring instrument Tribomaster TL201Ts (manufactured by Trinity Lab Co., Ltd.), the coefficients were measured by bringing a metal ball into contact with the resin sheets obtained in the examples and comparative examples at room temperature, under conditions of a load of 300 gf and a scanning speed of 100 mm / sec.

[0163] <Compression Creep Test> Resin sheets obtained in the examples and comparative examples were cut to a size of 10 mm x 10 mm x 2 mm to serve as test specimens, and the thickness of the test specimens was measured before the test. A compression creep test was performed using a creep testing machine (C200-3, manufactured by Toyo Seiki Seisakusho) under the following conditions: test stress of 20 MPa, load application method: lever weight movement type, stroke range: 30 mm, and duration of 3 days (72 hours). After stress release, the thickness of the test specimens was measured 30 minutes later, and the rate of change in thickness before and after the test was calculated.

[0164] The resins used in the examples and comparative examples are shown below. PMP-1: TPX RT31 manufactured by Mitsui Chemicals, Inc. PMP-2: TPX MX004 manufactured by Mitsui Chemicals, Inc. PMP-3: TPX MX002 manufactured by Mitsui Chemicals, Inc. PP-1: Novatec MA3 manufactured by Nippon Polypropylene Co., Ltd. PP-2: Novatec MA04A manufactured by Nippon Polypropylene Co., Ltd.

[0165] Example 1: PMP-1 pellets were heated and melted at 270°C for 10 minutes using a heating press to form shapes of 10 mm × 500 mm × 2 mm and 10 mm × 50 mm × 0.5 mm. Then, the temperature was lowered at 10°C / min to room temperature to produce resin sheets (test specimens of the component). The results of various tests performed on the obtained resin sheets or resin sheets produced by injection molding are shown in the table.

[0166] Example 2: Resin sheets (test specimens of the component) were prepared and various tests were performed in the same manner as in Example 1, except that PMP-2 was used instead of PMP-1. The results are shown in the table.

[0167] Example 3: Resin sheets (test specimens of the component) were prepared and various tests were performed in the same manner as in Example 1, except that PMP-3 was used instead of PMP-1. The results are shown in the table.

[0168] Comparative Example 1: Resin sheets (test specimens of the component) were prepared and various tests were performed in the same manner as in Example 1, except that PP-1 was used instead of PMP-1 and the heating press conditions were set to 230°C. The results are shown in the table. Note that since the melting point of the resin used was less than 200°C, the loss tangent at 200°C could not be measured.

[0169] Comparative Example 2: Resin sheets (test specimens of the component) were prepared and various tests were performed in the same manner as in Example 1, except that PP-2 was used instead of PMP-1 and the heating press conditions were set to 230°C. The results are shown in the table. Note that since the melting point of the resin used was less than 200°C, the loss tangent at 200°C could not be measured.

[0170] In the table, "-" indicates that the test was not conducted.

[0171]

[0172]

[0173]

[0174]

[0175] As shown in Table 1, the polymethylpentene resin of the examples exhibits a smaller change in loss tangent (tanδ) between 50°C and 200°C compared to the polypropylene of the comparative example, making it suitable for use at high temperatures. Furthermore, as shown in Table 1, the polymethylpentene resin of the examples has higher static and dynamic friction coefficients compared to the polypropylene of the comparative example, resulting in better adhesion to the seating surface (joint surface) and excellent sealing properties. Additionally, as shown in Table 5, the polymethylpentene resin of the examples has a higher surface modulus compared to the polypropylene of the comparative example, resulting in greater repulsive force and adhesion, thus providing superior sealing performance. Finally, as shown in Table 5, the polymethylpentene resin of the examples exhibits a smaller change in surface modulus after chemical immersion compared to the polypropylene of the comparative example, allowing for long-term use even in environments with contact with chemicals.

[0176] The components of the embodiment were suitable for use as sealing components (parts) in semiconductor manufacturing equipment where chemicals are used, from the viewpoint of excellent heat resistance and sealing properties.

Claims

1. A component containing polymethylpentene resin, which comes into contact with corrosive substances and is a sealing component.

2. The component according to claim 1, which is at least one selected from the group consisting of O-rings, packings, gaskets, and washers.

3. The member according to claim 1 or 2, wherein the polymethylpentene resin has a content of 85 mol% or more of constituent units derived from 4-methyl-1-pentene.

4. The component according to any one of claims 1 to 3, wherein the melt flow rate of the polymethylpentene resin is 1 g / 10 min or more.

5. The member according to claim 4, wherein the melt flow rate of the polymethylpentene resin is 20 g / 10 min to 30 g / 10 min.

6. The component according to any one of claims 1 to 5, wherein the melting point of the polymethylpentene resin is 200°C or higher.

7. The member according to claim 6, wherein the melting point of the polymethylpentene resin is 220°C to 250°C.

8. The member according to any one of claims 1 to 7, wherein the load deflection temperature of the polymethylpentene resin at a load of 0.45 MPa is 80°C or higher.

9. The component according to any one of claims 1 to 8, wherein the total metal content of the 17 elements (Li, Na, Mg, Al, K, Ca, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd, Ba, Pb) when the polymethylpentene resin is ashed is 60 ppm or less.

10. When a test specimen of the aforementioned component (size: 10 mm x 50 mm x 2 mm) was immersed in 3.6% by mass hydrochloric acid at 23°C for one week (168 hours), the amount of metal leached from the surface of the test specimen of the aforementioned component was 20 μg / m² per surface area of ​​the test specimen. ２ The member according to any one of claims 1 to 9 below.

11. The component according to any one of claims 1 to 10, wherein the weight-average molecular weight of the polymethylpentene resin is 30,000 or more.

12. The member according to any one of claims 1 to 11, wherein the rate of change in surface modulus before and after immersion of a test specimen (size: 10 mm x 50 mm x 2 mm) in the following chemical solution for one week (168 hours) is 0.5% or less. (Chemical solution) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) 13. The member according to claim 12, wherein the rate of change in surface modulus before and after immersion of a test specimen (size: 10 mm x 50 mm x 2 mm) in the following chemical solution for one week (168 hours) is 0.2% or less. (Chemical solution) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) 14. The member according to any one of claims 1 to 13, wherein the water contact angle is 95° or more.

15. The member according to any one of claims 1 to 14, wherein the static friction coefficient is 0.4 or greater.

16. The member according to any one of claims 1 to 15, wherein the coefficient of dynamic friction is 0.3 or greater.

17. The member according to any one of claims 1 to 16, wherein when a test specimen (size: 10 mm x 10 mm x 2 mm) of the member is subjected to a compression creep test at 20 MPa for 3 days (72 hours), the rate of change in the thickness of the test specimen before and after the test is 25% or less.

18. The member according to any one of claims 1 to 17, wherein the pH of the corrosive substance is 6 or less or 8 or more.

19. The member according to any one of claims 1 to 18, wherein the oxidation-reduction potential (vs NHE) of the corrosive substance is -2.0 to 3.0 V.

20. The member according to any one of claims 1 to 19, wherein the corrosive substance is a fluid.

21. The member according to any one of claims 1 to 20, wherein the corrosive substance is at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, and organic solvents.

22. The member according to claim 21, wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide solution and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide solution and sulfuric acid.

23. The basic substance is TMAH ([(CH ３ ) ４ N] ＋ [OH] － The member according to claim 21, which is at least one selected from the group consisting of ammonia water, sodium hydroxide aqueous solution, and a mixed chemical solution of hydrogen peroxide and ammonia water.

24. The member according to claim 21, wherein the organic solvent is isopropyl alcohol.

25. The component according to any one of claims 1 to 24, which is a component for semiconductor manufacturing-related equipment.

26. A component that contains a resin having a melt flow rate of 0.1 to 500 g / 10 min, a melting point of 180 to 250°C, and a load deflection temperature of 80°C or higher at a load of 0.45 MPa, and is a sealing component that comes into contact with corrosive substances.

27. The member according to claim 26, wherein the melt flow rate of the resin is 20 g / 10 min to 30 g / 10 min.

28. The member according to claim 26 or 27, wherein the melting point of the resin is 220°C to 250°C.

29. Semiconductor manufacturing equipment equipped with a sealing component containing polymethylpentene resin.

30. The semiconductor manufacturing apparatus according to claim 29, wherein the melt flow rate of the polymethylpentene resin is 20 g / 10 min to 30 g / 10 min.

31. The semiconductor manufacturing apparatus according to claim 29 or 30, wherein the melting point of the polymethylpentene resin is 220°C to 250°C.

32. A semiconductor manufacturing-related apparatus according to any one of claims 29 to 31, which is at least one selected from the group consisting of a mask / reticle manufacturing apparatus, a wafer manufacturing apparatus, a wafer processing apparatus, an assembly apparatus, an inspection apparatus, and a semiconductor manufacturing apparatus-related apparatus.

33. The mask reticle manufacturing apparatus is at least one selected from the group consisting of a photolithography process apparatus, a thin film formation / etching / cleaning / drying apparatus, and an inspection / evaluation apparatus; the wafer manufacturing apparatus is a wafer processing apparatus; the wafer process apparatus is at least one selected from the group consisting of a resist processing apparatus, an etching apparatus, a cleaning / drying apparatus, a heat processing apparatus, an ion implantation apparatus, a thin film formation apparatus, a CVD apparatus, a sputtering apparatus, an inspection / evaluation apparatus, a CMP apparatus, and an processing apparatus; the assembly apparatus is at least one selected from the group consisting of a dicing apparatus, a bonding apparatus, and a packaging apparatus; and the inspection apparatus is at least one selected from the group consisting of a testing apparatus, a probing apparatus, a handler, an aging apparatus, a cold / heat testing apparatus, a temperature / humidity testing apparatus, a pressure cooker apparatus, a laser processing system, and a lifetime testing apparatus. The semiconductor manufacturing apparatus according to claim 32, wherein the semiconductor manufacturing apparatus is at least one selected from the group consisting of a conveying device, a pure water / chemical solution device, a gas device, a cleanroom device, a jig cleaning / drying device, a flow control device, a taping device, a packaging device, and liquid / gas measuring instruments.

34. The photolithography apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), a baking apparatus, and a discam apparatus; the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a sputtering apparatus, a CVD apparatus, and a drying apparatus; the inspection and evaluation apparatus is a defect correction apparatus; the wafer processing apparatus is a wafer marking apparatus; the resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, an ashing apparatus, and a baking apparatus; the etching apparatus is a dry etching apparatus; the cleaning / drying apparatus is at least one selected from the group consisting of a dry cleaning apparatus and a drying apparatus; the heat processing apparatus is at least one selected from the group consisting of an oxidation apparatus, a diffusion apparatus, and an annealing apparatus; the ion implantation apparatus is at least one selected from the group consisting of a high-current ion implantation apparatus, a medium-current ion implantation apparatus, and a high-energy ion implantation apparatus. The CVD apparatus is at least one selected from the group consisting of high-pressure CVD apparatus, SACVD, reduced-pressure CVD, plasma CVD apparatus, metal CVD apparatus, mist CVD apparatus, and ALD apparatus; the thin-film deposition apparatus is at least one selected from the group consisting of vacuum deposition apparatus, silicon epitaxial growth apparatus, compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and plating apparatus; the inspection and evaluation apparatus is an Auger electron spectrometer; the processing apparatus is at least one selected from the group consisting of wafer marking apparatus, back grinding machine, bump plating apparatus, back grinder tape application machine, back grinder, and back grinder tape peeling machine; and the dicing apparatus is at least one selected from the group consisting of dicing apparatus and wafer mounting apparatus. The bonding apparatus is at least one selected from the group consisting of a die bonding apparatus, a hybrid bonding apparatus, a wire bonding apparatus, an inner lead bonding apparatus, an outer lead bonding apparatus, and a flip-chip bonding apparatus.The packaging apparatus is at least one selected from the group consisting of a molding apparatus, a deburring apparatus, and a soldering apparatus; the testing apparatus is at least one selected from the group consisting of an electron beam testing apparatus and a laser beam testing apparatus; the probing apparatus is a prober; the aging apparatus is an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus; the transport apparatus is at least one selected from the group consisting of an in-process wafer transport apparatus, an inter-process wafer transport apparatus, and a stocker; the pure water / chemical solution apparatus is at least one selected from the group consisting of a pure water production apparatus, an ultrafiltration apparatus, a reverse osmosis apparatus, a sterilization apparatus, a slurry supply apparatus, a chemical purification apparatus, and a waste liquid treatment apparatus; the gas apparatus is at least one selected from the group consisting of a gas generator, a gas purification apparatus, a gas mixing apparatus, and a gas detection apparatus. The semiconductor manufacturing apparatus according to claim 33, wherein the cleanroom apparatus is at least one selected from the group consisting of a clean bench, a clean tunnel, a thermal chamber, an environmental testing apparatus, an air shower, and a pass box.

35. A semiconductor manufacturing apparatus according to any one of claims 29 to 34, wherein a corrosive substance is used within the apparatus.

36. A semiconductor manufacturing apparatus according to any one of claims 29 to 35, wherein a corrosive substance is used in the apparatus and the corrosive substance comes into contact with the member.

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