Device and method for processing substrate
Patent Information
- Application Number
- PCT/KR2025/007552
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-24
- Filing Date
- 2025-06-02
- Publication Date
- 2026-10-01
Smart Images
Figure KR2025007552_01102026_PF_FP_ABST
Abstract
Description
Substrate processing apparatus and method
[0001] The present invention relates to a substrate processing apparatus and method, and more specifically, to a substrate processing apparatus and method for processing a plurality of substrates in different process areas.
[0002] Generally, to manufacture semiconductor devices, various processes can be performed in a substrate processing apparatus that includes a process chamber in a vacuum atmosphere. For example, a substrate may be loaded into the process chamber, and processes such as depositing a thin film or etching a thin film on the substrate may be carried out. Within the substrate processing apparatus, the substrate may be supported by a substrate support structure installed inside the process chamber. Process gases may be supplied to the substrate through a shower head inside the process chamber to process the substrate. Recently, to increase the productivity of semiconductor devices, a substrate processing apparatus is being utilized that mounts and rotates multiple substrates on a single substrate support structure and spatially separates and sprays multiple process gases from a shower head.
[0003] That is, the process chamber may include a plurality of process zones, and at least two of the plurality of process zones may be sprayed with different types of process gases so that different thin film deposition processes can be carried out.
[0004] Embodiments of the present invention provide a substrate processing apparatus capable of improving thin film deposition efficiency.
[0005] In addition, embodiments of the present invention provide a substrate processing method using the above-described substrate processing apparatus.
[0006] A substrate processing apparatus according to one aspect of the present invention may include a process chamber, a substrate support structure, a gas injection structure, and a control unit. The process chamber may include a plurality of process zones for depositing a thin film on each of a plurality of substrates. The substrate support structure may include a plurality of substrate support modules located inside the process chamber and rotating and supporting the plurality of substrates. The gas injection structure may be positioned above the process chamber so as to face the substrate support structure. The gas injection structure may inject a plurality of process gases onto each of the plurality of substrates that have entered the plurality of process zones. The control unit may vary the rotation speed of the plurality of substrate support modules based on a substrate processing time including a thin film deposition time.
[0007] A substrate processing method according to another aspect of the present invention is a method for depositing a thin film on a plurality of substrates by sequentially circulating a plurality of process areas for spraying at least one first source gas and a second group of process areas for spraying at least one second reaction gas a plurality of times, comprising: a step of forming a first thin film structure on each of the plurality of substrates by circulating the first group of process areas and the second group of process areas A times (where A is a natural number) while the plurality of substrates are rotated at a first rotational speed; and a step of forming a second thin film structure on the first thin film structure by varying the plurality of substrates at a second rotational speed faster than the first rotational speed, and then circulating the first group of process areas and the second group of process areas N times (where N is a natural number).
[0008] Another embodiment of the present invention is a substrate processing method in which a plurality of substrate support modules, each equipped with a plurality of substrates, circulate a plurality of process areas a plurality of times to deposit a thin film on the plurality of substrates, the method comprising: a step of pre-processing the plurality of substrates; a step of depositing the thin film on the plurality of substrates by circulating the plurality of process areas while the plurality of substrate support modules are rotated at a first rotational speed; and a post-processing step of spraying a purge gas onto the plurality of substrates while the plurality of substrate support modules are rotated at a second rotational speed faster than the first rotational speed.
[0009] According to the present embodiment, by varying the rotation speed of the substrate support module based on the substrate processing time including the thin film deposition time, the deposition uniformity of the thin film and the deposition speed of the thin film can be simultaneously improved.
[0010] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to embodiments of the present invention.
[0011] Figure 2 is a bottom view of the gas injection structure of the substrate processing device shown in Figure 1.
[0012] Figure 3 is a top view of the substrate support structure of the substrate processing device shown in Figure 1.
[0013] FIG. 4 is an exploded perspective view showing a rotatable (rotatable) substrate support module of the substrate processing device illustrated in FIG. 1.
[0014] FIG. 5 is a bottom view showing the distribution plate of the rotatable substrate support module illustrated in FIG. 4.
[0015] FIG. 6 is a flowchart for explaining a substrate processing method according to one embodiment of the present invention.
[0016] FIG. 7 is a flowchart for explaining a substrate processing method according to one embodiment of the present invention.
[0017] FIG. 8 is a cross-sectional view of a semiconductor device in which thin films are formed according to one embodiment of the present invention.
[0018] FIG. 9 is a cross-sectional view of a semiconductor device in which thin films are formed according to one embodiment of the present invention.
[0019] FIG. 10 is a flowchart for explaining a substrate processing method according to another embodiment of the present invention.
[0020] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity of description. Throughout the specification, the same reference numerals refer to the same components.
[0021] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to embodiments of the present invention. FIG. 2 is a bottom view of a gas injection structure of the substrate processing apparatus shown in FIG. 1. FIG. 3 is a top view of a substrate support structure of the substrate processing apparatus shown in FIG. 1. For reference, FIG. 1 is a cross-sectional view taken along the line a-a' of FIG. 2 and FIG. 3.
[0022] Referring to FIGS. 1 to 3, a substrate processing device (10) may include a process chamber (100), a gas injection structure (200), a substrate support structure (300), a plurality of substrate-supporting modules (400), and a controller (800).
[0023] First, the process chamber (100) may define a plurality of process areas for processing a plurality of substrates. The process chamber (100) may include a body (110) and a lid (120). The lid (120) may be coupled to the upper edge of the body (110) to define the process areas. A sealing member (not shown) may be interposed between the body (110) and the lid (120) so that the interior of the process areas (A1-A4) may maintain a vacuum. The lid (120) may include a window (not shown) into which the gas injection structure (200) is inserted.
[0024] The process chamber (100) may be connected to a vacuum pump (140) through an exhaust line (130) located at its lower part. By operating the vacuum pump (140), the vacuum level inside the process chamber is controlled, and residual process gas and reaction byproducts inside the process chamber can be discharged. Unexplained reference numeral V may be a throttle valve located in the exhaust line (130) that controls the vacuum level of the process area according to the opening rate.
[0025] The process chamber (100) may be provided with a gate (G) through which a substrate enters and exits. The gate (G) may be located, for example, on one side wall of the body (110).
[0026] The gas injection structure (200) may be coupled to the window of the lead (120). The gas injection structure (200) may include a plurality of process gas injection sections (210), a plurality of separation gas injection sections (220), a curtain gas injection section (230), and a plurality of purge gas injection sections (240). The number of the plurality of process gas injection sections (210) may be equal to the number of substrates processed simultaneously in the process chamber (100).
[0027] As an exemplary embodiment, a plurality of process gas injection units (210) may include first to fourth process gas injection units (210a-210d). The first to fourth process gas injection units (210a-210d) may be arranged at 90° intervals along the circumference of the gas injection structure (200). Each of the first to fourth process gas injection units (210a-210d) may have a shower head structure. Accordingly, the substrate processing device (10) may have four process regions (A1-A4).
[0028] As an example, the first and second process gas injection units (210a, 210b) may each inject the same source gas or different source gases. The third and fourth process gas injection units (210c, 210d) may each inject the same reaction gas or different reaction gases.
[0029] As another example, the first and second process gas injection sections (210a, 210b) are
[0030] It can be connected to a single source gas supply unit (not shown) to inject the same source gas. The third and fourth process gas injection units (210c, 210d) can also be connected to the same reaction gas supply unit (not shown) to inject the same reaction gas.
[0031] In some cases, the first process gas injection unit (210a) may be connected to a first source gas supply unit (not shown) and a purge gas supply unit (not shown), and the second process gas injection unit (210b) may be connected to a second source gas supply unit (not shown) and the purge gas supply unit. Additionally, the third process gas injection unit (210c) and the fourth process gas injection unit (210d) may be connected to a reaction gas supply unit (not shown) and the purge gas supply unit.
[0032] The plurality of separation gas injection units (220) are positioned between adjacent process gas injection units, thereby defining a plurality of process areas within the process chamber (100). As an exemplary embodiment, the plurality of separation gas injection units (220) may include first to fourth separation gas injection units (220a-220d).
[0033] The first separation gas injection unit (220a) is arranged in the form of a line pattern between the first and second process gas injection units (210a, 210b) so that the first process gas injected from the first process gas injection unit (210a) and the second process gas injected from the second process gas injection unit (210b) can be prevented from mixing within the process area.
[0034] The second separation gas injection unit (220b) is arranged in a line pattern between the second and third process gas injection units (210b, 210c) so that the second process gas and the third process gas injected from the third process gas injection unit (210c) can be prevented from mixing within the process area.
[0035] The third separation gas injection unit (220c) is arranged in a line pattern between the third and fourth process gas injection units (210c, 210d) so that the third process gas and the fourth process gas injected from the fourth gas injection unit (210d) can be prevented from mixing within the process area.
[0036] The fourth separation gas injection unit (220d) is arranged in a line pattern between the fourth and first process gas injection units (210d, 210a) to prevent the fourth process gas and the first process gas from mixing within the process area.
[0037] The first to fourth separation gas injection units (220a-220d) can each inject a separation gas. The separation gas may include, for example, an inert gas such as argon (Ar) gas or nitrogen (N2) gas.
[0038] As an exemplary embodiment, when the first to fourth process gas injection sections (210a-210d) are arranged at 90° intervals along the circumference of the gas injection structure (200), the first and third separation gas injection sections (220a, 220c), and the second and fourth separation gas injection sections (220b, 220d) may be extended in directions intersecting each other.
[0039] The curtain gas injection unit (230) may be located, for example, at the intersection of the first and third separation gas injection units (220a, 220c) and the second and fourth separation gas injection units (220b, 220d). The curtain gas injection unit (230) may prevent process gases between the process gas injection units (210a and 210c, and 210b and 210d) arranged diagonally from mixing within the process area. For example, the curtain gas may include an inert gas such as argon (Ar) gas or nitrogen (N2) gas.
[0040] The substrate support structure (300) is located in the lower region of the process area so as to face the gas injection structure (200).
[0041] The substrate support structure (300) may include a susceptor (310), a rotation shaft (320), at least one floating gas line (330), and at least one rotating gas line (340). The substrate support structure (300) may additionally include a braking gas line (not shown).
[0042] The above susceptor (310) may include a plurality of substrate support modules (400) for mounting substrates on which a thin film is to be deposited. The susceptor (310) may include a plurality of mounting portions (315) on the upper surface of the susceptor (310) facing the gas injection structure (200) to which the substrate support modules (400) are mounted. The plurality of mounting portions (315) and the plurality of substrate support modules (400) may be installed on the susceptor (310) in correspondence with the process gas injection portions (210a-210d).
[0043] The plurality of mounting portions (315) are formed on the upper surface of the susceptor (310) and may have a pocket shape. The plurality of mounting portions (315) may be spaced apart along the circumferential direction. For example, the plurality of mounting portions (315) may be radially and evenly arranged around the rotation axis (320). The susceptor (310) may have a roughly disc shape, but is not limited thereto. The rotation axis (320) is connected to the center of the lower surface of the susceptor (310) to rotate the susceptor (310). That is, the susceptor (310) may rotate around the rotation axis (320). The rotation axis (320) may function as the orbital axis of the substrate support module (400). In this embodiment, the rotation axis (320) may rotate, for example, in a clockwise direction.
[0044] The floating gas line (330) may extend along the interior of the rotation axis (320) and the susceptor (310). That is, the floating gas line (330) may be exposed through a floating gas discharge hole (330a) formed on the upper surface of at least one of the plurality of mounting portions (315). The floating gas line (330) may provide and deliver a floating gas to float the substrate support module (400).
[0045] The rotational gas line (340) may extend along the interior of the rotational axis (320) and the susceptor (310). The rotational gas line (340) may also be exposed through a rotational gas discharge hole (340a) formed on the upper surface of at least one of the plurality of mounting portions (315). The rotational gas line (340) may provide rotational gas for rotating the substrate support module (400).
[0046] For example, the rotating gas line (340) may be provided in multiple numbers within the rotating shaft (320), or it may be branched from a single rotating gas line (340) to the rotating gas discharge port (340a) of the plurality of mounting portions (315). In order to provide different amounts of rotating gas through the plurality of rotating gas discharge ports (340a), the plurality of rotating gas lines (340) or the plurality of branches of the rotating gas line (340) may be connected to the at least one flow control unit (345). That is, the flow control unit (345) can provide the flow rate of rotating gas provided to the plurality of mounting portions (315).
[0047] The plurality of substrate support modules (400) can each be inserted into the plurality of mounting portions (315). The plurality of substrate support modules (400) can support a plurality of substrates.
[0048] At least one of the plurality of substrate support modules (400) of the present embodiment may have a rotational function by the rotating gas provided by the substrate support structure (300).
[0049] As described above, since the susceptor (310) rotates around the rotation axis (320), the first substrate support module (400a), the second substrate support module (400b), the third substrate support module (400c), and the fourth substrate support module (400d) can rotate, that is, revolve around the rotation axis (320) together with the susceptor (310).
[0050] FIG. 4 is an exploded perspective view showing a rotatable (rotatable) substrate support module of a substrate processing device shown in FIG. 1, and FIG. 5 is a bottom view showing a distribution plate of the rotatable substrate support module shown in FIG. 4.
[0051] Referring to FIGS. 4 and 5, the substrate support module (400) can be inserted into the mounting portion (315). The substrate support module (400) may include a satellite (430), a distribution plate (440), a pin support (470), and a plurality of lift pins (480).
[0052] The bottom portion of the above-mentioned mounting portion (315) may include a floating gas outlet (330a) and a rotating gas outlet (340a). The floating gas outlet (330a) may be connected to the floating gas line (330). The rotating gas outlet (340a) may be connected to the rotating gas line (340).
[0053] The satellite (430) may be placed on the upper part of the mounting portion (315). The substrate (S) may be placed on the upper part of the satellite (430). The satellite (430) may be rotated relative to the susceptor (310) by the floating gas and rotating gas supplied through the floating gas discharge port (330a) and the rotating gas discharge port (340a) of the mounting portion (315). The satellite (430) may be rotated by the rotating gas while floating by the floating gas.
[0054] The satellite (430) may include a sawtooth-shaped rotational pattern (not shown) on its bottom surface to facilitate receiving rotational force from the rotating gas. Additionally, the satellite (430) may receive additional braking gas to stop rotation.
[0055] Additionally, a guide pin (GP) for guiding the center of the satellite (430) may be further provided at the center of the seating portion (315). The guide pin (GP) may protrude to a certain height from the center of the seating portion (315). A guide groove (GH, see FIG. 1) is provided on the lower surface of the satellite (430) to accommodate the guide pin (GP). Accordingly, shaking is reduced when centering the satellite (430) by the guide pin (GP).
[0056] The plurality of lift pins (480) can support the substrate (S) when loading the substrate (S) entering from the outside onto the satellite (430) or unloading the substrate (S) from the satellite (430).
[0057] The plurality of lift pins (480) are configured to penetrate the satellite (430), so that the substrates can be raised and lowered relative to the satellite (430).
[0058] The substrate support module (400) may further include a pin support (470) that moves up and down relative to the susceptor (310) to support a plurality of lift pins (480) during loading or unloading of the substrate (S). For example, the pin support (470) may include a ring member (471) and a leg member (473). The ring member (471) may be placed on a seating portion (315) below the lift pins (480) to support the lift pins (480) during loading or unloading of the substrate (S). The leg member (473) is connected to the ring member (471) and may extend downward to the susceptor (310) by penetrating the seating portion (315).
[0059] The above-mentioned seating portion (315) may further include a support groove (316) that surrounds the guide pin (GP). At least one leg through-hole (317) penetrating the seating portion (315) may be further provided on the bottom surface of the support groove (316). The ring member (471) of the pin support (470) may move up and down relative to the susceptor (310) within the support groove (316). The leg member (473) of the pin support (470) may be positioned within the leg through-hole (317) and may move up and down relative to the susceptor (310).
[0060] As an exemplary embodiment, the support groove (316) may be formed along the rotational trajectory of the support portion (484) so that the support portion (484) of the lift pins (480) can rotate within the support groove (316) when the satellite (430) rotates. For example, the support groove (316) may be configured to accommodate the ring member (471). Accordingly, when the satellite (430) rotates, the support portion (484) of the lift pins (480) can rotate within the support groove (316) without the support portion (484) of the lift pins (480) being lifted higher than the seating portion (315).
[0061] The ring member (471) may be formed along the rotational trajectory of the lift pins (480) so as to support the lift pins (480) even if the lift pins (480) stop at any position after rotating with the satellite (430).
[0062] The distribution plate (440) may be interposed between the susceptor (310) and the satellite (430). A pin hole (441) through which the guide pin (GP) passes may be formed in the center of the distribution plate (440). The distribution plate (440) can deliver the floating gas and the rotating gas delivered from the bottom of the seating portion (315) to the satellite (430). In this embodiment, the distribution plate (440) may include a floating gas diffusion groove (443), a floating gas discharge hole (442), a rotating gas diffusion groove (445), a rotating gas discharge hole (444), and a braking hole (446).
[0063] The floating gas diffusion groove (443) may be formed on the lower surface of the distribution plate (440) along the inner circumference of the distribution plate (440). That is, the floating gas diffusion groove (443) may have a roughly ring shape, but is not limited thereto. The floating gas diffusion groove (443) may correspond to and be connected to the floating gas outlet (330a). Accordingly, the floating gas may be supplied from the floating gas outlet (330a) to the floating gas diffusion groove (443). The floating gas may flow along the interior of the floating gas diffusion groove (443) and diffuse uniformly.
[0064] The floating gas discharge hole (442) may extend from the floating gas diffusion groove (443) and be exposed through the upper surface of the distribution plate (440). That is, the floating gas discharge hole (442) may be formed penetrating from the lower surface to the upper surface of the distribution plate (440). The floating gas discharged from the floating gas discharge hole (442) is provided to the center of the lower surface of the satellite (430), thereby causing the satellite (430) to float from the upper surface of the distribution plate (440).
[0065] The rotating gas diffusion groove (445) may be formed on the lower surface of the distribution plate (440) along the outer circumference of the distribution plate (440). That is, the rotating gas diffusion groove (445) may have a roughly ring shape with a diameter longer than the floating gas distribution passage, but is not limited thereto. The rotating gas diffusion groove (445) may correspond to and be connected to the rotating gas outlet (340a). Thus, the rotating gas may be supplied from the rotating gas outlet (340a) to the rotating gas diffusion groove (445). The rotating gas may flow along the interior of the rotating gas diffusion groove (445) and diffuse uniformly.
[0066] The rotating gas discharge hole (444) may extend from the rotating gas diffusion groove (445) and be exposed through the upper surface of the distribution plate (440). That is, the rotating gas discharge hole (444) may be formed penetrating from the lower surface to the upper surface of the distribution plate (440). The rotating gas discharged from the rotating gas discharge hole (444) may have directionality. This rotating gas may be provided to the lower edge of the satellite (430) to rotate, i.e., spin the floating satellite (430).
[0067] The braking hole (446) may be formed at the lower edge of the distribution plate (440). Braking gas may be supplied to the braking hole (446). The braking gas discharged from the braking hole (446) may have a directionality opposite to that of the rotating gas. Therefore, the rotation of the satellite (430) may be stopped by the braking gas. The braking gas can rapidly control the rotational movement.
[0068] The substrate processing device (10) may further include a heater section (500). The heater section (500) may have a size equal to or smaller than the plane of the susceptor (310). The heater section (500) may include a heater (510), a side wall section (520), and a heater cover (530). The heater (510) may include various heating sources such as heating wires or cartridge heaters, and may be arranged in a coil shape around the rotation axis (320). The side wall section (520) and the heater cover (530) may be a housing that surrounds the heater (510). The side wall section (520) is configured to surround the side wall section of the heater (510), and the heater cover (530) may be formed on the upper part of the heater (510) and substantially parallel to the susceptor (310). The heater cover (530) may be composed of, for example, a quartz material.
[0069] The heater portion (500) can heat the first to fourth substrate support modules (400a to 400d) mounted on the susceptor (310). The heater portion (500) may include a first groove portion (H1) into which the rotation axis (320) is inserted at the center. Additionally, the heater portion (500), more specifically the heater cover (530), may include a second groove portion (H2) into which the leg member (473) is inserted.
[0070] The control unit (800) can control the gas injection structure (200), the substrate support structure (300), the plurality of substrate support modules (400), and the heater unit (500) constituting the substrate processing device (10), respectively. The control unit (800) can adjust the rotation speed of the plurality of substrate support modules (400) for each process cycle.
[0071] FIG. 6 is a flowchart for explaining a substrate processing method according to one embodiment of the present invention.
[0072] Referring to FIGS. 1 to 6, a plurality of substrates (S1-S4) are sequentially loaded into a plurality of substrate support modules (400a-400d) inside a process chamber (100). Next, the plurality of substrate support modules (400a-400d), which rotate (or spin) at a first rotational speed, circulate through a plurality of process regions (A1-A4) a number of times A (where A is a natural number greater than or equal to 1) to form a first thin film structure on the plurality of substrates (S1-S4) (S11).
[0073] In this embodiment, circulation means that the substrate passes through all process regions (A1 to A4) within the process chamber (100) sequentially one by one to perform a predetermined process. Additionally, the circulation may be expressed as a single cycle.
[0074] The above A may be a natural number that varies according to the thickness of the first thin film structure. The first thin film structure may be a single material film. As an exemplary embodiment, the first thin film structure may be a seed layer. When the first thin film structure is used as the seed layer, the thickness of the first thin film structure may be at a level of 1 to 10% of the target thickness of the thin film. Consequently, the thickness of the first thin film structure and the target thickness of the thin film may be indicators exemplifying a substrate processing time, including the thin film deposition time. For example, when the first thin film structure is used as the seed layer, A may be 1 to 3, but is not limited thereto.
[0075] The first rotational speed may be a relatively low speed of 5 rpm to 15 rpm. As the substrate support modules (400a-400d) rotate at the first rotational speed, the process gases sprayed from each process area (A1-A4) are evenly adsorbed and reacted on the resulting substrate (S1-S4). As the substrate (S1-S4) rotates at the first rotational speed which is a relatively low speed, the adsorption and reaction of the process gases on the substrate (S1-S4) proceed slowly, so a first thin film structure can be formed on the substrate (S1-S4) with a uniform thickness.
[0076] After completing the A-times of the plurality of substrate support modules (400a-400d), while the plurality of substrate support modules (400a-400d) additionally cycle the plurality of process areas (A1-A4) N times, the rotational speed of the plurality of substrate support modules (400a-400d) is varied to a second rotational speed different from the first rotational speed to form a second thin film structure (S12).
[0077] For example, the second thin film structure may be a film of the same material as the first thin film structure. The second thin film structure may be a main thin film grown using the first thin film structure as a seed layer.
[0078] For example, the second rotational speed may be 10 to 20 rpm, which is greater than the first rotational speed, and the thickness of the second thin film structure may be 90 to 99% of the target thickness of the thin film.
[0079] When depositing the second thin film structure that occupies most of the thin film, if the rotation speed of the plurality of substrate support modules (400a-400d) becomes relatively faster, the adsorption and reaction speed of the process gases on the substrates (S1-S4) is drawn in, thereby improving the deposition speed of the second thin film structure. When the second thin film structure is the main thin film, the second thin film structure may be formed with a thickness greater than that of the first thin film structure, and N may be a natural number greater than A. In an exemplary embodiment, when the substrates repeatedly cycle through the process regions (A1-A4) A+N times, a thin film having the target thickness may be deposited.
[0080] As another example, the first thin film structure and the second thin film structure may be different material films. For example, the first thin film structure may include a first insulating film, and the second thin film structure may include a second insulating film having an etching selectivity different from that of the first insulating film.
[0081] As another example, the first thin film structure and the second thin film structure may include different types of first and second thin films that are alternately stacked multiple times.
[0082] As described above, the rotational speed of the substrate support modules (400a-400d) can be varied by driving the control unit (800). For example, the control unit (800) can control the rotational speed of the substrate support modules (400a-400d) by controlling the amount of rotating gas supplied to the mounting unit (315) through the flow control unit (345).
[0083] Afterward, the substrates (S1-S4) on which the thin film deposition is completed can be sequentially unloaded from the substrate processing device (10). As another example, after the thin film deposition is completed, the type of gas supplied to the process gas injection unit (210a-210d) may be changed to additionally deposit a different type of thin film.
[0084] FIG. 7 is a flowchart for explaining a substrate processing method according to one embodiment of the present invention, and FIG. 8 is a cross-sectional view of a semiconductor device in which thin films are formed according to one embodiment of the present invention.
[0085] Referring to FIGS. 1 to 8, the step (S11) of forming the first thin film structure (TH1) may include the step (S21) of depositing the first thin film (50a) and the step (S22) of depositing the second thin film (50b).
[0086] For example, the first thin film (50a) and the second thin film (50b) may be the same material layer.
[0087] The first thin film (50a) can be deposited on the substrates (S1-S4) that rotate at a first rotational speed.
[0088] The first rotational speed may be, for example, at a level of 5 rpm to 15 rpm. The plurality of substrate support modules (400a-400d) for rotating the substrate (S1-S4) at the first rotational speed may cycle through the plurality of process regions (A1-A4) A times.
[0089] The second thin film (50b) may be formed based on the first thin film (50a). If the second thin film (50b) is thicker than the first thin film (50a), the second thin film (50b) may be deposited on the substrates (S1-S4) which rotate at a second rotational speed faster than the first rotational speed. The second rotational speed may be, for example, 10 to 20 rpm. Accordingly, when depositing the second thin film (50b), the substrate support modules (400a-400d) may cycle through the plurality of process regions (A1-A4) N times, which is more than A times.
[0090] When depositing the first thin film (50a) and the second thin film (50b), a first source gas may be provided to process regions corresponding to the first group (e.g., A1, A2) among the plurality of process regions, and a first reaction gas may be provided to process regions corresponding to the second group (e.g., A3, A4) among the plurality of process regions. For example, the first source gas may be a silicon-containing gas, and the first reaction gas may be an oxygen-containing gas. Accordingly, the first thin film (50a), the second thin film (50b), and the first thin film structure (TH1) may include silicon oxide. Additionally, the first thin film (50a) may correspond to a seed layer, and the second thin film (50b) may correspond to a main layer.
[0091] The step (S12) of forming the second thin film structure (TH2) may include the step (S23) of forming the third thin film (60a) and the step (S24) of forming the fourth thin film (60b). The third thin film (60a) and the fourth thin film (60b) may include the same material layer, but the second thin film structure (TH2) including the third and fourth thin films (60a, 60b) may be of a different material from the first thin film structure (TH1) including the first and second thin films (50a, 50b).
[0092] The third thin film (60a) may be formed on the substrates (S1-S4) that rotate at a third rotational speed. The third rotational speed may be relatively slower than the second rotational speed. For example, the third rotational speed may be the same as or different from the first rotational speed.
[0093] The third thin film (60a) may be formed with a thinner thickness than the fourth thin film (60b). The third thin film (60a) may be formed by the substrate support modules (400a-400d) rotating at the third rotational speed circulating the process regions (A1-A4) B times. B may be the same as or different from A.
[0094] The fourth thin film (60b) may be formed based on the third thin film (60a). The fourth thin film (60b) may be formed on the substrates (S1-S4) that rotate at a fourth rotational speed faster than the third rotational speed (S24).
[0095] Since the fourth thin film (60b) is thicker than the third thin film (60a), the fourth thin film (60b) can be formed by circulating the process regions (A1-A4) by the substrate support modules (400a-400d) M times, which is greater than B times. M is a natural number greater than B, and M may be the same as or different from N.
[0096] When depositing the third and fourth thin films (60a, 60b), a second source gas may be provided to the process regions of the first group (e.g., A1, A2), and a second reaction gas may be provided to the process regions of the second group (e.g., A3, A4). The second source gas may be a silicon-containing gas, and the second reaction gas may be a nitrogen-containing gas. Accordingly, the third thin film (60a), the fourth thin film (60b), and the second thin film structure (TH2) containing them may include a silicon nitride film.
[0097] By repeatedly performing steps S21 to S24, a first thin film structure (TH1) containing silicon oxide and a second thin film structure (TH2) containing silicon nitride can be alternately stacked on the substrate (S1-S4).
[0098] In this way, when depositing multiple thin films, both thickness uniformity and deposition speed of the thin films can be secured by varying the rotation speed of the substrate support module.
[0099] FIG. 9 is a cross-sectional view of a semiconductor device having thin films formed thereon according to one embodiment of the present invention.
[0100] Referring to FIGS. 7 and 9, the first thin film structure (TH1) and the second thin film structure (TH2) may each include a first material film (70) and a second material film (80) that are alternately stacked at least once. The thickness of the first material film (70) and the thickness of the second material film (80) constituting the first and second thin film structures (TH1, TH2) may each be uniform.
[0101] As an exemplary embodiment, the number of stacking layers of the first material film (70) and the second material film (80) of the first thin film structure (TH1) may be smaller than the number of stacking layers of the first material film (70) and the second material film (80) of the second thin film structure (TH2). Accordingly, the thickness of the second thin film structure (TH2) may be thicker than that of the first thin film structure (TH1).
[0102] When the first thin film structure (TH1) is formed on a plurality of substrates (S1-S4), the substrates (S1-S4) rotate at a first rotational speed, and when the second thin film structure (TH2) is formed on the plurality of substrates (S1-S4), the substrates (S1-S4) rotate at a second rotational speed faster than the first rotational speed. Accordingly, when the second thin film structure (TH2) having a relatively thick thickness is formed, the rotational speed of the substrate increases, so the deposition speed of the thin film structures can be greatly improved.
[0103] FIG. 10 is a flowchart for explaining a substrate processing method according to one embodiment of the present invention.
[0104] Referring to FIGS. 1 to 5 and FIG. 10, a substrate processing method according to the present embodiment may include a step (S31) of pre-processing a plurality of substrates (S1-S4), a step (S32) of depositing a thin film on the plurality of substrates (S1-S4), and a step (S33) of post-processing the plurality of substrates (S1-S4) on which the thin film is deposited.
[0105] After a plurality of substrates (S1-S4) are sequentially loaded onto a plurality of substrate support modules (400a-400d), the plurality of substrates (S1-S4) may be pretreated (S31). The pretreatment step (S31) may include a step of raising the temperature inside the process chamber (100) to a thin film deposition temperature. As another example, the pretreatment step (S31) may include a step of removing dangling bonds by spraying purge gas onto the plurality of substrates (S1-S4).
[0106] The step (S32) of depositing the thin film can be carried out by rotating each of the substrate support modules (400a-400d) at a first rotational speed.
[0107] The above post-processing step (S33) may be performed between the thin film deposition step (S32) and the unloading step of the substrates. The above post-processing step (S33) may include a step of removing process by-products generated during the thin film deposition step (S32). For example, the above post-processing step (S33) may remove the process by-products by spraying purge gas onto the surface of the substrates (S1-S4).
[0108] During the thin film deposition step (S32), the substrates (S1-S4) can be rotated at a first rotational speed.
[0109] During the post-processing step (S33), the substrates (S1-S4) can be rotated at a second rotational speed that is relatively faster than the first rotational speed. Because the substrates (S1-S4) are rotated relatively quickly, impurities remaining on the surface of the substrates (S1-S4) can be quickly removed together with the purge gas.
[0110] Depending on the case, during the preprocessing step (S31), the substrates (S1-S4) may be rotated at a first rotational speed or a second rotational speed.
[0111] Since the thin film is formed on the substrates (S1-S4) that rotate at a first rotational speed slower than the second rotational speed, the deposition uniformity of the thin film can be improved.
[0112] Since the pretreatment or posttreatment steps (S31, S33), excluding the thin film deposition step (S32), are performed on substrates (S1-S4) that rotate at a relatively fast second rotational speed, the process speed of the pretreatment step (S31) and posttreatment step (S33) can be improved. As a result, the processing time within the substrate processing device (10) can be reduced.
[0113] According to the present embodiment, by varying the rotation speed of the substrate support module based on the substrate processing time including thin film deposition, the deposition uniformity of the thin film and the deposition speed of the thin film can be simultaneously improved.
[0114] In the above embodiments, the rotation of the substrate support module will be understood as the rotation of the substrate mounted on its upper surface, and the rotation of the substrate support module and the substrate will be understood as the rotation of the substrate support module and the rotation of the substrate.
[0115] Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications can be made by those skilled in the art within the scope of the technical concept of the present invention.
[0116] 100 ; Process chamber 110 ; Body
[0117] 120 ; Lead 130 ; Exhaust line
[0118] 140 ; Vacuum pump 200 ; Gas injection structure
[0119] 300 ; Substrate support structure 310 ; Susceptor
[0120] 315: Seating section 340: Rotating gas line
[0121] 345 ; Flow control unit 400a-400d ; Substrate support module
[0122] 430 ; Satellite 440 ; Split Board
[0123] 470 ; Pin support 480 ; Lift pin
[0124] 500 ; Heater 800 ; Control unit
Claims
1. A process chamber comprising a plurality of process regions for depositing a thin film on each of a plurality of substrates; A substrate support structure comprising a plurality of substrate support modules located inside the process chamber and rotating and supporting the plurality of substrates; A gas injection structure disposed on the upper part of the process chamber facing the substrate support structure and configured to inject a plurality of process gases into each of the plurality of substrates that have entered the plurality of process regions; and A substrate processing device comprising a control unit configured to vary the rotational speed of the plurality of substrate support modules based on a substrate processing time including a thin film deposition time.
2. In Paragraph 1, The above control unit is, While the plurality of substrate support modules cycle through the plurality of process regions A times, the plurality of substrate support modules are controlled to rotate at a first rotational speed, and A substrate processing apparatus that, after completing the A-times of the plurality of substrate support modules, controls the rotational speed of the plurality of substrate support modules to a second rotational speed different from the first rotational speed while the plurality of substrate support modules additionally rotate the plurality of process areas N times.
3. In Paragraph 2, The thin film comprises a first thin film structure and a second thin film structure formed on the upper portion of the first thin film structure, and The first thin film structure is formed on the substrates that are rotated at the first rotational speed, and The above second thin film structure is a substrate processing device formed on the substrates that are rotated at the second rotational speed.
4. In Paragraph 3, The first thin film structure and the second thin film structure comprise the same material, A substrate processing apparatus characterized in that the second thin film structure is thicker than the first thin film structure.
5. In Paragraph 4, A substrate processing device characterized in that the second rotational speed is faster than the first rotational speed.
6. In Paragraph 3, A substrate processing apparatus characterized in that the first thin film structure and the second thin film structure are made of different materials.
7. In Paragraph 3, The first thin film structure and the second thin film structure are, It includes a first material film and a second material film of different types stacked alternately multiple times, and The thickness of the second thin film structure is thicker than the thickness of the first thin film structure, and A substrate processing device characterized in that the second rotational speed is faster than the first rotational speed.
8. In Paragraph 1, The above substrate processing time is, It includes at least one of the pretreatment time of the substrate, the thin film deposition time, and the posttreatment time of the substrate. The above control unit is, During the above thin film deposition time, the plurality of substrate support modules are rotated at a first rotational speed, and A substrate processing device that controls the plurality of substrate support modules to rotate at a second rotational speed faster than the first rotational speed during the above post-processing time.
9. In Paragraph 8, The above gas injection structure is a substrate processing device configured to inject purge gas onto the substrates rotating at the second rotational speed during the post-processing time, 10. In Paragraph 8, A substrate processing device in which the control unit controls the plurality of substrate support modules to rotate at least one of the first rotational speed and the second rotational speed during the preprocessing time.
11. In any one of paragraphs 1 through 10, A substrate processing device in which the above-described control unit controls the supply amount of rotating gas provided to the plurality of substrate support modules to control the rotational speed of the plurality of substrate support modules.
12. In Paragraph 1, The above substrate support structure is, A susceptor positioned opposite to the above gas injection structure; A rotation axis connected to the center of the lower surface of the susceptor and configured to rotate the susceptor; A plurality of mounting portions configured in a pocket shape on the upper surface of the susceptor to accommodate the plurality of substrate support modules; and A substrate processing device comprising a rotating gas supply line located inside the rotating shaft and the susceptor and providing the rotating gas to the surfaces of the plurality of mounting portions.
13. In Paragraph 12, Each of the above plurality of substrate support modules is, A satellite that rotates the substrate by the rotating gas provided at each of the plurality of mounting portions; and A substrate processing device comprising a distribution plate disposed between the above-mentioned mounting portion and the above-mentioned satellite to distribute the rotating gas to the above-mentioned satellite.
14. In Paragraph 12, A substrate processing apparatus comprising a flow control unit connected to the above-mentioned rotating gas supply line and controlling the flow rate of the rotating gas transmitted to the plurality of mounting portions according to a control signal of the above-mentioned control unit.
15. A method for depositing a thin film on a plurality of substrates by sequentially circulating a plurality of first group of process regions in which at least one first source gas is injected and a second group of process regions in which at least one second reaction gas is injected a plurality of times, wherein A step of forming a first thin film structure on each of the plurality of substrates by rotating the plurality of substrates at a first rotational speed and circulating the first group of process regions and the second group of process regions A times (where A is a natural number); and A substrate processing method comprising the step of varying the plurality of substrates to a second rotational speed faster than the first rotational speed, and then circulating the first group of process regions and the second group of process regions N times (where N is a natural number) to form the second thin film structure on the first thin film structure.
16. In Paragraph 15, A substrate processing method in which the second thin film structure has a thicker thickness than the first thin film structure.
17. In Paragraph 15, A substrate processing method characterized in that the first thin film structure and the second thin film structure are of the same material.
18. In Paragraph 15, A substrate processing method characterized in that the first thin film structure and the second thin film structure are made of different materials.
19. In Paragraph 15, The first thin film structure and the second thin film structure are, It includes a first material film and a second material film of different types stacked alternately multiple times, and The thickness of the second thin film structure is thicker than the thickness of the first thin film structure, and A substrate processing method characterized in that the second rotational speed is faster than the first rotational speed.
20. A substrate processing method in which a plurality of substrate support modules, each equipped with a plurality of substrates, circulate a plurality of process areas a plurality of times to deposit a thin film on the plurality of substrates, wherein A step of pre-processing the plurality of substrates above; A step of depositing the thin film on the plurality of substrates by circulating the plurality of process regions while rotating the plurality of substrate support modules at a first rotational speed; and A substrate processing method comprising a post-processing step of spraying purge gas onto the plurality of substrates while the plurality of substrate support modules are rotated at a second rotational speed faster than the first rotational speed.