Pressure-boosted chiller with increased operating temperature range

Abstract

A pressure-boosted chiller for a substrate processing system includes a tank configured to store a liquid coolant. A pressurized gas source is configured to supply a pressurized gas to the tank, wherein the pressurized gas has a predetermined pressure greater than 10 pounds per square inch (psi) to increase a boiling temperature of the liquid coolant in the cooling system. A pump and a first valve in fluid communication with an outlet of the tank and an inlet of a cooling channel of a heat exchanged component of the substrate processing system.

Description

Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAPRESSURE-BOOSTED CHILLER WITH INCREASED OPERATING TEMPERATURE RANGECROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No.63 / 776,758, filed on March 24, 2025. The entire disclosure of the above application is incorporated herein by reference.FIELD

[0002] The present disclosure relates to substrate processing systems, and more particularly to pressure-boosted chillers for substrate processing systems.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] Substrate processing systems may be used to treat substrates such as semiconductor wafers. The substrate treatments may include deposition, etching, cleaning, and / or other treatments. During processing, a substrate is arranged on a substrate support in a processing chamber of the substrate processing system. Gas mixtures are introduced into the processing chamber using a gas delivery device such as a showerhead. In some processes, radio frequency (RF) plasma may be used to initiate chemical reactions.

[0005] During substrate processing, the substrate is arranged on an electrostatic chuck including a ceramic top plate that is bonded to a baseplate that includes cooling channels. During plasma processing, the substrate is heated by the plasma. To achieve process uniformity during the process, it is desirable to maintain the substrate within a predetermined temperature range. A chiller supplies liquid at a predetermined temperature and flow rate to cool the baseplate. Substrates arranged on the ceramic top plate are cooled by the cooling fluid. Resistive heaters in the ceramic top plate may be used to adjust the temperature of the substrates.Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POASUMMARY

[0006] A pressure-boosted chiller for a substrate processing system includes a tank configured to store a liquid coolant. A pressurized gas source is configured to supply a pressurized gas to the tank, wherein the pressurized gas has a predetermined pressure greater than or equal to 10 pounds per square inch (psi). A pump and a first valve in fluid communication with an outlet of the tank and an inlet of a cooling channel of a heat exchanged component of the substrate processing system.

[0007] In other features, a heat exchanger includes a first channel including an inlet in fluid communication with an outlet of the heat exchanged component of the substrate processing system and an outlet in communication with the tank. A second channel is in fluid communication with a second liquid coolant at a temperature different than a temperature of the liquid coolant.

[0008] In other features, a pressure sensor is configured to sense a pressure in the tank. A controller is configured to control the predetermined pressure of the pressurized gas in the tank based on the pressure sensed in the tank. A controller is configured to control timing of opening and closing of the first valve to supply the liquid coolant to the heat exchanged component based on a recipe. The pressurized gas includes a gas selected from a group consisting of helium (He), argon (Ar), clean dry air, molecular nitrogen (N2), or combinations thereof.

[0009] In other features, the predetermined pressure is in a range from 10 psi to 100 psi.

[0010] A substrate processing system includes a processing chamber, the heat exchanged component arranged in the processing chamber, and the pressure-boosted chiller.

[0011] In other features, an electrostatic chuck includes a baseplate and a ceramic top plate bonded to the baseplate. The heat exchanged component comprises the baseplate of the electrostatic chuck.

[0012] In other features, a gas distribution device includes a cooling plate in thermal communication with the gas distribution device. The heat exchanged component comprises the cooling plate of the gas distribution device.

[0013] A substrate processing system includes a processing chamber, a dielectric window arranged on one side of the processing chamber and including cooling channels,Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAand the pressure-boosted chiller. The dielectric window comprises the heat exchanged component.

[0014] A pressure-boosted chiller for a substrate processing system includes a first tank configured to store a liquid coolant at a first temperature. A second tank is configured to store the liquid coolant at a second temperature. A pressurized gas source is configured to supply a pressurized gas to the first tank and the second tank, wherein the pressurized gas has a predetermined pressure greater than or equal to 10 pounds per square inch (psi). A first pump is in fluid communication with an outlet of the first tank. A second pump is in fluid communication with an outlet of the second tank. A first valve is configured to selectively fluidly connect one of the outlet of the first pump and the second pump to a heat exchanged component of the substrate processing system. A second valve is configured to selectively fluidly connect the heat exchanged component to one of the first tank and the second tank.

[0015] In other features, a first heat exchanger includes a first channel in fluid communication with the second valve and a second channel in fluid communication with a second liquid coolant. A second heat exchanger includes a first channel in fluid communication with the second valve and a second channel in fluid communication with a third liquid coolant.

[0016] In other features, a first pressure sensor is configured to sense a first pressure in the first tank. A second pressure sensor is configured to sense a second pressure in the second tank. A conduit connecting the first tank to the second tank.

[0017] In other features, a controller is configured to control the predetermined pressure of the pressurized gas in the first tank based on the first pressure sensed in the first tank and the second pressure sensed in the second tank. A controller is configured to control timing of opening and closing of the first valve and the second valve to supply the liquid coolant to the heat exchanged component based on a recipe.

[0018] In other features, the pressurized gas includes a gas selected from a group consisting of helium (He), argon (Ar), clean dry air, molecular nitrogen (N2), or combinations thereof. The predetermined pressure is in a range from 10 psi to 100 psi.

[0019] A substrate processing system includes a processing chamber, the heat exchanged component arranged in the processing chamber, and the pressure-boosted chiller.Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POA

[0020] In other features, an electrostatic chuck includes a baseplate and a ceramic top plate bonded to the baseplate. The heat exchanged component comprises the baseplate of the electrostatic chuck.

[0021] In other features, a gas distribution device includes a cooling plate in thermal communication with the gas distribution device. The heat exchanged component comprises the cooling plate of the gas distribution device.

[0022] A substrate processing system includes a processing chamber, a dielectric window arranged on one side of the processing chamber and including cooling channels, and the pressure-boosted chiller. The dielectric window comprises the heat exchanged component.

[0023] A method for exchanging heat with a heat exchanged component of a substrate processing system includes storing a liquid coolant in a tank; supplying a pressurized gas to the tank, wherein the pressurized gas has a predetermined pressure greater than or equal to 10 pounds per square inch (psi); and supplying the liquid coolant to a cooling channel of the heat exchanged component of the substrate processing system.

[0024] In other features, the method includes sensing a pressure in the tank. The method includes controlling the predetermined pressure of the pressurized gas in the tank based on the pressure sensed in the tank. The method includes controlling timing of the supplying of the liquid coolant to the heat exchanged component based on a recipe. The pressurized gas includes a gas selected from a group consisting of helium (He), argon (Ar), clean dry air, molecular nitrogen (N2), or combinations thereof.

[0025] In other features, the predetermined pressure is in a range from 10 psi to 100 psi. The heat exchanged component comprises a baseplate of an electrostatic chuck. The heat exchanged component comprises a cooling plate in thermal communication with a gas distribution device. The heat exchanged component comprises a dielectric window arranged on one side of a processing chamber.

[0026] A method for exchanging heat with a heat exchanged component of a substrate processing system includes storing a liquid coolant at a first temperature in a first tank; storing the liquid coolant at a second temperature in a second tank; supplying a pressurized gas to the first tank and the second tank. The pressurized gas has a predetermined pressure greater than or equal to 10 pounds per square inch (psi); andAttorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAselectively fluidly connecting one of the first tank and the second tank to a heat exchanged component of the substrate processing system.

[0027] In other features, the method includes sensing a first pressure in the first tank and a second pressure in the second tank. The controlling the predetermined pressure of the pressurized gas in the first tank based on the first pressure sensed in the first tank and in the second tank based on the second pressure sensed in the second tank. The method includes controlling timing of the supplying of the liquid coolant from one of the first tank and the second tank to the heat exchanged component based on a recipe. The pressurized gas includes a gas selected from a group consisting of helium (He), argon (Ar), clean dry air, molecular nitrogen (N2), or combinations thereof.

[0028] In other features, the predetermined pressure is in a range from 10 psi to 100 psi. The heat exchanged component comprises a baseplate of an electrostatic chuck. The heat exchanged component comprises a cooling plate in thermal communication with a gas distribution device. The heat exchanged component comprises a dielectric window arranged on one side of a processing chamber.

[0029] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0031] FIG. 1 is a functional block diagram of an example of an inductively coupled plasma (ICP) process including a pressure-boosted chiller according to the present disclosure;

[0032] FIG. 2 is a functional block diagram of an example of a capacitively coupled plasma (CCP) process including a pressure-boosted chiller according to the present disclosure;

[0033] FIG. 3 is a more detailed functional block diagram of an example of a pressure-boosted chiller according to the present disclosure;Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POA

[0034] FIG. 4 is a more detailed functional block diagram of another example of a pressure-boosted chiller according to the present disclosure;

[0035] FIGS. 5 and 6 are examples of method for operating a pressure-boosted chiller according to the present disclosure.

[0036] In the drawings, reference numbers may be reused to identify similar and / or identical elements.DETAILED DESCRIPTION

[0037] During substrate processing, precise thermal management is important for maintaining high process yields. For example, the substrate processing system may include a component that is exposed to high process temperatures and needs to be temperature controlled to ensure process uniformity. For example, the heat exchanged component may include a baseplate of an electrostatic chuck (ESC) or a cooling plate of a gas distribution device. Chillers are used to supply liquid coolant at a predetermined temperature to the heat exchanged component during a process or part of a process.

[0038] Conventional chillers often have a limited operating temperature range due to a boiling temperature of the liquid coolant circulated therein. As a result, different processes may require different types of liquid coolant to operate over different temperature ranges that cannot be covered by the same liquid coolant. This approach increases system complexity, maintenance, and cost while reducing efficiency.

[0039] The present disclosure relates to a pressure-boosted chiller that operates at a higher pressure than atmospheric pressure. The increased operating pressure increases or elevates a boiling temperature of the liquid coolant. As a result, the same liquid coolant can operate across a wider temperature range (the lower temperature limit remains the same). Using this approach to increase the operating temperature range simplifies the thermal control system, reduces operational overhead, and improves product management.

[0040] Referring now to FIG. 1, an example of a substrate processing system 10 according to the present disclosure is shown. The substrate processing system 10 includes a plasma generator 11 including a direct drive circuit 12 and a capacitive circuit 14. The direct drive circuit 12 receives a sinusoidal RF signal and uses a gate driver and a half bridge (not shown) to drive a coil assembly 16 including one or more coils. For example, the coil assembly 16 may include inner and outer sets of interleaved spiral coils.Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAThe capacitive circuit 14 is configured to split power between inner and outer coils sets. Additional details relating to the direct drive circuit 12 are shown and described in commonly-assigned U.S. Patent No. 10,515,781, which issued on December 24, 2019, and which is hereby incorporated herein by reference in its entirety. In other examples, the plasma generator may include an RF source configured to generate a sinusoidal RF signal and a tuning / matching circuit configured to tune an output of the RF source to a desired frequency and / or a desired phase, match an impedance of the coils, and / or split power between the coils (both not shown).

[0041] The coil assembly 16 is arranged adjacent to a dielectric window 24. In some examples, a plenum (not shown) may be arranged between the coil assembly 16 and the dielectric window 24 to control the temperature of the dielectric window 24 with hot and / or cold air flow. The dielectric window 24 is arranged along one side of a processing chamber 28. The processing chamber 28 further comprises a substrate support (or pedestal) 32. A substrate 33 is arranged on the substrate support 32.

[0042] The substrate support 32 may include an electrostatic chuck (ESC), or a mechanical chuck or other type of chuck. When an ESC is used, the substrate 33 is arranged on a ceramic top plate 34 bonded by a bonding layer 35 to a baseplate 36. The ceramic top plate 34 includes clamping electrodes 37 and resistive heaters 38. The baseplate 36 includes cooling channels 39 configured to receive liquid coolant. Process gas is supplied to the processing chamber 28 and plasma 40 is generated inside of the processing chamber 28. The plasma 40 treats an exposed surface of the substrate 33. An RF bias circuit 52 selectively biases the baseplate with an RF bias.

[0043] A gas delivery system 56 may be used to supply a process gas mixture to the processing chamber 28. The gas delivery system 56 may include process and inert gas sources 57, a gas metering system 58 such as valves and mass flow controllers, and a manifold 59.

[0044] A pressure-boosted chiller 63 may be used to supply liquid coolant to coolant channels 61 in the dielectric window 24. A pressure-boosted chiller 64 may be used to supply a liquid coolant at one or more temperatures to heat / cool the substrate support 32 to one or more predetermined temperatures. An exhaust system 65 includes a valve 66 and pump 67 to control a vacuum level in the processing chamber and / or remove reactants from the processing chamber 28 by purging or evacuation.Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POA

[0045] In some examples, the system includes purge valves, a purge tank, and / or safety valves. In some examples, the pressure-boosted chillers have idle, run, and stop states. As can be appreciated, the pressure-boosted chillers can be run in a non-pressure-boosted state, a pressurizing state, or a pressurized state. When transitioning from a run state to a stop state, the system can transition from a pressurized state to a nonpressurized state. Purging of one or both channels can be performed before or after a run state.

[0046] A controller 54 may be used to control the process. The controller 54 monitors system parameters and controls delivery of the gas mixture, striking, maintaining, and extinguishing the plasma, removal of reactants, supply of cooling gas, and so on. Additionally, as described below in detail, the controller 54 may control various aspects of the plasma generator 11 , etc.

[0047] Referring now to FIG. 2, another example of a substrate processing system is shown. A substrate processing system 100 includes a processing chamber 102 including a gas distribution device 104 and a substrate support 106. In some examples, the gas distribution device 104 includes a showerhead. In some examples, the substrate support 106 includes an electrostatic chuck (ESC). During operation, a substrate 108 is arranged on the substrate support 106.

[0048] If an ESC is used, the substrate support 106 includes a baseplate 110 that acts as a lower electrode. In some examples, the baseplate 110 is made of a conducting material such as aluminum. The baseplate 110 supports a top plate 112, which may be made of ceramic or another material resistant to plasma. A bond layer 114 bonds the top plate 112 and the baseplate 110. The baseplate 110 may include one or more coolant channels 116 for flowing coolant through the baseplate 110. In some examples, an edge ring 118 is arranged around the substrate support 106 to shape the plasma. In some examples, a height of the edge ring can be increased in response to erosion to maintain a uniform plasma sheath from one substrate to the next.

[0049] A gas delivery system 130 includes one or more gas sources 132. The gas sources 132 supply one or more process gas mixtures. For an etching process, the process gas mixture may include carrier gas, inert gases, etching gas, etc. For a deposition process, the process gas mixture may include carrier gas, inert gases, deposition precursor gases, etc. The gas sources 132 are connected by flow metering devices 134 (e.g., mass flow controllers and valves) to a manifold 140. An output of theAttorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAmanifold 140 is fed to the gas distribution device 104. In some examples, a vapor delivery system 170 includes one or more vapor delivery sources that supply vapor to the manifold 140 or connect to the gas distribution device 104 downstream from the manifold 140. In some examples, the vapor delivery system 170 includes one or more ampoules 174, vaporizers 176, and flow metering devices 178 to controllably supply the vapor to the processing chamber.

[0050] In some examples, the controller 160 is connected to heating elements 144 (e.g., thermal control elements (TCEs) or resistive heaters) arranged in the top plate 112. The controller 160 may be used to supply power to the heating elements 144 to control a temperature of the substrate support 106 and the substrate 108 during processing. The controller 160 also operates a pressure-boosted chiller 146 that controls coolant flow through the coolant channels 116 of the baseplate 110. The controller 160 operates the pressure-boosted chiller 146 to selectively flow the coolant through the coolant channels 116 to cool the substrate support 106 and the substrate 108. The controller 160 also operates a pressure-boosted chiller 187 that controls coolant flow through the coolant channels of a cooling plate 190. In some examples, the pressure-boosted chiller 146 and the pressure-boosted chiller 187 can be combined.

[0051] A valve 150 and a pump 152 are connected to a gas line 148 (e.g., an exhaust gas line) and are used to control pressure within the processing chamber 102 to a predetermined pressure and / or to evacuate reactants from the processing chamber 102.

[0052] A plasma generator 154 supplies power to an upper electrode associated with the gas distribution device 104. The plasma generator 154 includes a radio frequency (RF) plasma source 156 to output RF voltage / power to a matching network 158. The matching network 158 matches the impedance of the RF plasma source 156 to the impedance of the load including the processing chamber and plasma. Plasma generator 154 may include multiple RF generators and match networks. An RF bias generator (not shown) may be used to supply power to the baseplate or other electrode associated with the substrate support. The RF bias generator includes a radio frequency (RF) bias source to output RF voltage / power to a matching network. The matching network matches the impedance of the RF bias source to the impedance of the load. The RF bias generator may include multiple RF generators and match networks.

[0053] The controller 160 may be used to monitor system parameters and to control components of the substrate processing system 100 based on a recipe. One or moreAttorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POArobots 161 may be used to deliver substrates onto, and remove substrates from, the substrate support 106.

[0054] The gas distribution device 104 includes a gas plenum 182 that distributes gas from the gas delivery system 130 and / or vapor from the vapor delivery system 170 to gas through holes 184 passing through a plate or electrode 186 that is biased by the plasma generator 154. Thermal chokes 188 may be arranged between a cooling plate 190 (including cooling channels) and a surface of the gas distribution device 104. The thermal chokes 188 control the location and amount of heat transfer between the cooling plate 190 and the gas distribution device 104 (e.g., a showerhead). In other examples, the upper electrode is separate from the gas distribution device.

[0055] While examples of plasma processing systems are shown, the pressure-boosted chiller can be used in any type of substrate processing system.

[0056] Referring now to FIG. 3, an example of a pressure-boosted chiller 200 that supplies a single liquid coolant at a temperature in a predetermined range to one or more heat exchanged components of a substrate processing system is shown in further detail. The pressure-boosted chiller 200 includes a tank 210 acting as a reservoir for a liquid coolant 212 supplied to the heat exchanged component.

[0057] A pressurized gas source 220 supplies a pressurized gas (at a predetermined pressure above atmospheric pressure) to an inlet of a valve 226. In some examples, desiccant 222 is arranged at an outlet of the pressurized gas source 220 to prevent moisture buildup and contamination in the tank 212. A pressure regulator 224 may be arranged between the valve 226 and the pressurized gas source to regulate the predetermined pressure. An outlet of the valve 226 is connected to the tank 210. A pressure sensor 223 senses a pressure in the tank 210. A pump 238 and a valve 243 are in fluid communication with the tank 210. An outlet of the pump 238 and / or valve 243 supplies the liquid coolant to cooling channels 244 of a heat exchanged component 246 such as a baseplate of an ESC, a cooling plate thermally coupled to the gas distribution device, walls of the processing chamber, etc. The pump 238 further increases the pressure in the system to flow the liquid coolant. As can be appreciated, the positions of the pump 238 and the valve 243 can be switched relative to the tank 210. In some examples, a check valve 242 is arranged between an outlet of the pump 238 and the inlet of the heat exchanged component 246.Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POA

[0058] An outlet of the heat exchanged component 246 is connected to an inlet of a first channel of a heat exchanger 252. An outlet of the first channel of the heat exchanger 252 is connected to the tank 210. An inlet of a second channel receives a second liquid coolant at a predetermined temperature (to cool the liquid coolant back to the first temperature) from any suitable source. For example, a tank 260 includes the second liquid coolant. A heater and / or chiller 264 may be used to control the temperature of the second liquid coolant. A valve 272 and a pump 274 supply the second liquid coolant to the inlet of the second channel of the heat exchanger 252. The liquid coolant in the first channel and the second liquid coolant in the second channel exchange heat. For example, the second liquid coolant is at a lower (or higher) temperature and cools (or heats) the liquid coolant.

[0059] A temperature controller 280 communicates with the valves 226, 243, and 272, the pumps 238 and 274, the pressure sensor 232, and an optional temperature sensor 268 sensing a temperature of the second liquid coolant in the tank 260 to perform temperature control based on a recipe. The temperature controller 280 is configured to control pressure in the tank 210, timing of the opening and closing of the valves 226 and 243, and on / off operation and / or speed of the pump 238.

[0060] In some examples, the pressurized gas is or includes a noble gas or a stable gas with no moisture and low solubility in the liquid coolant. In some examples, the pressurized gas is selected from a group consisting of helium (He), argon (Ar), air (e.g., clean dry air (CDA)), molecular nitrogen (N2), or other suitable gas. The pressure of the gas will depend upon the process requirements for the coolant fluid and the change in boiling point that is required. For example, 35 psi increases the boiling point of one liquid coolant by about 40°C. If a lower increase in the boiling temperature is needed, lower pressure can be used and vice versa. In some examples, the pressurized gas has a pressure greater than 10 psi, 20 psi, 30 psi, or other suitable pressure to increase the boiling point of the liquid coolant in the system to a desired level. In some examples, the pressurized gas has a pressure in a range from 10 psi to 100 psi. In some examples, the pressurized gas has a pressure in a range from 10 psi to 50 psi.

[0061] The viscosity of the liquid coolant determines a lower temperature limit of the liquid coolant. Currently, the operating temperature range of liquid coolants is typically around a 100°C delta. The low temperature limit is primarily determined by kinematic viscosity, which affects the overall system pressure and the thermal uniformity of the heatAttorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAexchanged component. The upper temperature limit is determined by vapor pressure to avoid boiling along the coolant path. As semiconductor processes evolve, there is an increasing need for cryogenic applications that also require high-temperature operation, often exceeding a 100°C delta operating range, such as -40°C to 100°C, -60°C to 80°C, and -80°C to 80°C. The pressure-boosted chiller described herein leverages properties of cryogenic liquid coolants. However, these types of liquid coolant typically have a low boiling point. By pressurizing the liquid coolant, the boiling point is increased to enable high-temperature operation while the lower temperature limit remains the same.

[0062] Referring now to FIG. 4, an example of a pressure-boosted chiller 300 that supplies a liquid coolant at first and second temperatures to a heat exchanged component of a substrate processing system during different portions of a process is shown in further detail. For example, liquid coolant is supplied at a first temperature during a substrate treatment process (such as an etching or deposition) and then the liquid coolant is supplied at a second temperature during a chamber cleaning process. Having two tanks allows fast switching between the two different coolant temperatures.

[0063] The pressure-boosted chiller 300 includes first and second tanks 310-1 and 310-2 acting as reservoirs for first and second liquid coolant 312-1 and 312-2. In some examples, the first and second liquid coolant 312-1 and 312-2 are maintained at the same pressure but different temperatures. A pressurized gas source 320 supplies a pressurized gas to an inlet of a valve 326. In some examples, the pressurized gas source 320 includes desiccant to prevent moisture buildup and contamination in the tank 312-1 and 312-2. A pressure regulator 324 may be arranged between the valve 326 and the pressurized gas source 320. An outlet of the valve 326 is connected to the first and second tanks 310-1 and 310-2. First and second pressure sensors 332-1 and 332-2 sense pressures in the first and second tanks 310-1 and 310-2. A conduit 333 connects the first and second tanks 310-1 and 310-2 to equalize pressure therein.

[0064] An inlet of a first pump 338-1 is in fluid communication with the first tank 312-1. An outlet of the first pump 338-1 is selectively fluidly coupled to the heat exchanged component 346 by a valve 362. An inlet of a second pump 338-2 is in fluid communication with the second tank 312-2. An outlet of the second pump 338-2 is selectively fluidly coupled to the heat exchanged component 346 by a valve 364.

[0065] An outlet of the first pump 338-1 selectively supplies the first liquid coolant to cooling channels 344 of the heat exchanged component 346 such as a baseplate of anAttorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAESC, a cooling plate connected to the gas distribution device, walls of the processing chamber, etc. In some examples, a first checkvalve 342-1 is arranged between an outlet of the pump 338-1 and the inlet of the heat exchanged component 346. In some examples, a second checkvalve 342-2 is arranged between an outlet of the second pump 338-2 and the inlet of the heat exchanged component 346.

[0066] The valve 364 selectively connects an outlet of the heat exchanged component 346 to one of an inlet of a first channel of a first heat exchanger 352-1 or an inlet of a first channel of a second heat exchanger 352-2. An outlet of the first channel of the first heat exchanger 352-1 is connected to the first tank 310-1. An outlet of the first channel of the second heat exchanger 352-2 is connected to the second tank 310-2.

[0067] An inlet of a second channel of the first heat exchanger 352-1 receives a third liquid coolant at a temperature T1 in a first predetermined temperature range from any suitable liquid coolant source. An inlet of a second channel of the heat exchanger 352-2 receives a fourth liquid coolant at a temperature T2 in a second predetermined temperature range from any suitable liquid coolant source. In some examples, the first and second temperature ranges are different. A temperature controller 380 communicates with the valves 326, 362, and 364, the first and second pumps 338-1 and 338-2, and the first and second pressure sensors 332-1 and 332-2 to control the process.

[0068] Referring now to FIG. 5, a method for supplying liquid coolant to a heat exchanged component is shown. At 410, pressurized gas is supplied to the tank to increase pressure within the tank and the rest of the chiller. At 414, the pressurized liquid coolant is supplied to cooling channels of a heat exchanged component of a plasma processing system to increase the operating temperature range of the liquid coolant.

[0069] Referring now to FIG. 6, another method for supplying liquid coolant is shown. At 460, pressurized gas is supplied to first and second tanks (with liquid coolant at first and second temperatures, respectively) to increase pressure in the first and second tanks and the rest of the cooling system. At 464, the method determines whether a first part of a process is starting. If 464 is true, the method continues with 468 and configured valves in a first configuration to supply the first liquid coolant. At 472, the first liquid coolant is supplied to a heat exchanged component of the plasma processing system. At 476, the method determines whether the first part of the process ends. If 476 is true, the method determines whether a second part of a process is starting. If 480 is true, the method configures the valves in a second configuration to supply the second liquid coolant atAttorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POA484. At 488, the second liquid coolant is supplied at a temperature T2 to the cooling channels of the heat exchanged component (e.g., T1 <> T2). At 492, the method determines whether the second part of the process ends. If false, the method returns to 488. If true, the method configures the valves at 496 and the method ends.

[0070] In some examples, the boosted chiller enables cryogenic temperature cooling of ESC with low greenhouse warming potential (GWP) or perfluoroalkoxy (PFA)-free coolant (heat transfer fluid) that have a boiling point below room temperature at atmospheric pressure. Low GWP refers to GWP less than 150. PFA-free coolant refers to coolant that does not contain per- and poly-fluorinated substances. There are limited options for low GWP or PFA-free coolant that can operate between < -100°C to 95°C.

[0071] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with features of any of the other embodiments, even if that combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.

[0072] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should beAttorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAconstrued to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0073] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0074] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, non-transitory memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0075] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud”Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAor all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0076] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0077] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or toolsAttorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAused in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POACLAIMSWhat is claimed is:

1. A pressure-boosted chiller for a substrate processing system, comprising:a tank configured to store a liquid coolant;a pressurized gas source configured to supply a pressurized gas to the tank, wherein the pressurized gas has a predetermined pressure greater than or equal to 10 pounds per square inch (psi); anda pump and a first valve in fluid communication with an outlet of the tank and an inlet of a cooling channel of a heat exchanged component of the substrate processing system.

2. The pressure-boosted chiller of claim 1 further comprising a heat exchanger including:a first channel including an inlet in fluid communication with an outlet of the heat exchanged component of the substrate processing system and an outlet in communication with the tank; anda second channel in fluid communication with a second liquid coolant at a temperature different than a temperature of the liquid coolant.

3. The pressure-boosted chiller of claim 1 further comprising a pressure sensor configured to sense a pressure in the tank.

4. The pressure-boosted chiller of claim 3 further comprising a controller configured to control the predetermined pressure of the pressurized gas in the tank based on the pressure sensed in the tank.

5. The pressure-boosted chiller of claim 1 further comprising a controller configured to control timing of opening and closing of the first valve to supply the liquid coolant to the heat exchanged component based on a recipe.

6. The pressure-boosted chiller of claim 1 , wherein the pressurized gas includes a gas selected from a group consisting of helium (He), argon (Ar), clean dry air, molecular nitrogen (N2), or combinations thereof.Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POA7. The pressure-boosted chiller of claim 1, wherein the predetermined pressure is in a range from 10 psi to 100 psi.

8. A substrate processing system comprising:a processing chamber;the heat exchanged component arranged in the processing chamber; and the pressure-boosted chiller of claim 1.

9. The substrate processing system of claim 8, further comprising:an electrostatic chuck comprising a baseplate and a ceramic top plate bonded to the baseplate,wherein the heat exchanged component comprises the baseplate of the electrostatic chuck.

10. The substrate processing system of claim 8, further comprising:a gas distribution device including a cooling plate in thermal communication with the gas distribution device,wherein the heat exchanged component comprises the cooling plate of the gas distribution device.

11. A substrate processing system comprising:a processing chamber;a dielectric window arranged on one side of the processing chamber and including the heat exchanged component; andthe pressure-boosted chiller of claim 1.

12. A pressure-boosted chiller for a substrate processing system, comprising:a first tank configured to store a liquid coolant at a first temperature;a second tank configured to store the liquid coolant at a second temperature; a pressurized gas source configured to supply a pressurized gas to the first tank and the second tank, wherein the pressurized gas is greater than or equal to 10 pounds per square inch (psi);a first pump in fluid communication with an outlet of the first tank;a second pump in fluid communication with an outlet of the second tank;Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POAa first valve configured to selectively fluidly connect one of the outlet of the first pump and the second pump to a heat exchanged component of the substrate processing system; anda second valve configured to selectively fluidly connect the heat exchanged component to one of the first tank and the second tank.

13. The pressure-boosted chiller of claim 12 further comprising:a first heat exchanger including a first channel in fluid communication with the second valve and a second channel in fluid communication with a second liquid coolant; anda second heat exchanger including a first channel in fluid communication with the second valve and a second channel in fluid communication with a third liquid coolant.

14. The pressure-boosted chiller of claim 12 further comprising:a first pressure sensor configured to sense a first pressure in the first tank; and a second pressure sensor configured to sense a second pressure in the second tank.

15. The pressure-boosted chiller of claim 12 further comprising a conduit connecting the first tank to the second tank.

16. The pressure-boosted chiller of claim 14 further comprising a controller configured to control the predetermined pressure of the pressurized gas in the first tank based on the first pressure sensed in the first tank and the second pressure sensed in the second tank.

17. The pressure-boosted chiller of claim 12 further comprising a controller configured to control timing of opening and closing of the first valve and the second valve to supply the liquid coolant to the heat exchanged component based on a recipe.

18. The pressure-boosted chiller of claim 12, wherein the pressurized gas includes a gas selected from a group consisting of helium (He), argon (Ar), clean dry air, molecular nitrogen (N2), or combinations thereof.Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POA19. The pressure-boosted chiller of claim 12, wherein the predetermined pressure is in a range from 10 psi to 100 psi.

20. A substrate processing system comprising:a processing chamber;the heat exchanged component arranged in the processing chamber; and the pressure-boosted chiller of claim 12.

21. The substrate processing system of claim 20, further comprising:an electrostatic chuck comprising a baseplate and a ceramic top plate bonded to the baseplate,wherein the heat exchanged component comprises the baseplate of the electrostatic chuck.

22. The substrate processing system of claim 20, further comprising:a gas distribution device including a cooling plate in thermal communication with the gas distribution device,wherein the heat exchanged component comprises the cooling plate of the gas distribution device.

23. A substrate processing system comprising:a processing chamber;a dielectric window arranged on one side of the processing chamber and including cooling channels, wherein the dielectric window comprises the heat exchanged component; andthe pressure-boosted chiller of claim 12.

24. A method for exchanging heat with a heat exchanged component of a substrate processing system, comprising:storing a liquid coolant in a tank;supplying a pressurized gas to the tank, wherein the pressurized gas has a predetermined pressure greater than or equal to 10 pounds per square inch (psi); and supplying the liquid coolant to a cooling channel of the heat exchanged component of the substrate processing system.Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POA25. The method of claim 24, further comprising sensing a pressure in the tank.

26. The method of claim 25 further comprising controlling the predetermined pressure of the pressurized gas in the tank based on the pressure sensed in the tank.

27. The method of claim 24 further comprising controlling timing of the supplying of the liquid coolant to the heat exchanged component based on a recipe.

28. The method of claim 24, wherein the pressurized gas includes a gas selected from a group consisting of helium (He), argon (Ar), clean dry air, molecular nitrogen (N2), or combinations thereof.

29. The method of claim 24, wherein the predetermined pressure is in a range from 10 psi to 100 psi.

30. The method of claim 24, wherein the heat exchanged component comprises a baseplate of an electrostatic chuck.

31. The method of claim 24, wherein the heat exchanged component comprises a cooling plate in thermal communication with a gas distribution device.

32. The method of claim 24, wherein the heat exchanged component comprises a dielectric window arranged on one side of a processing chamber.

33. A method for exchanging heat with a heat exchanged component of a substrate processing system, comprising:storing a liquid coolant at a first temperature in a first tank;storing the liquid coolant at a second temperature in a second tank; supplying a pressurized gas to the first tank and the second tank, wherein the pressurized gas has a predetermined pressure greater than or equal to 10 pounds per square inch (psi); andselectively fluidly connecting one of the first tank and the second tank to a heat exchanged component of the substrate processing system.Attorney Docket No. 12256-1 WOHDP Ref. No. 15545-001324-WO-POA34. The method of claim 33, further comprising sensing a first pressure in the first tank and a second pressure in the second tank.

35. The method of claim 34 further comprising controlling the predetermined pressure of the pressurized gas in the first tank based on the first pressure sensed in the first tank and in the second tank based on the second pressure sensed in the second tank.

36. The method of claim 33 further comprising controlling timing of the supplying of the liquid coolant from one of the first tank and the second tank to the heat exchanged component based on a recipe.

37. The method of claim 33, wherein the pressurized gas includes a gas selected from a group consisting of helium (He), argon (Ar), clean dry air, molecular nitrogen (N2), or combinations thereof.

38. The method of claim 33, wherein the predetermined pressure is in a range from 10 psi to 100 psi.

39. The method of claim 33, wherein the heat exchanged component comprises a baseplate of an electrostatic chuck.

40. The method of claim 33, wherein the heat exchanged component comprises a cooling plate in thermal communication with a gas distribution device.

41. The method of claim 33, wherein the heat exchanged component comprises a dielectric window arranged on one side of a processing chamber.

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