Low volume processing chamber for processing semiconductor substrates in substrate processing systems

Abstract

A substrate processing system for processing semiconductor substrates includes a processing chamber and an exhaust system coupled to the processing chamber. The processing chamber includes a plurality of stations. Each of the plurality of stations includes a well in which a substrate support is arranged to support a semiconductor substrate. The well includes an exhaust port. The exhaust system is arranged under the processing chamber. The exhaust system includes a plurality of valves, a plurality of pipes connected to the plurality of valves, and a pump connected to the plurality of pipes through an exhaust valve. Each of the plurality of valves is arranged directly under the exhaust port of the respective well.

Description

Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POALOWVOLUME PROCESSING CHAMBER FOR PROCESSING SEMICONDUCTOR SUBSTRATES IN SUBSTRATE PROCESSING SYSTEMSCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No.63 / 779,124, filed on March 27, 2025. The entire disclosure of the above application is incorporated herein by reference.FIELD

[0002] The present disclosure relates generally to substrate processing systems and more particularly to a low volume processing chamber for processing semiconductor substrates in substrate processing systems.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventor, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] Substrate processing systems (also called tools) may be used to perform etching, deposition, and / or other treatment of substrates such as semiconductor wafers. Examples of processes that may be performed on a substrate include, but are not limited to, etching, deposition, and cleaning processes. The substrates may be processed using chemical vapor deposition (CVD), plasma enhanced (PE) CVD (PECVD), atomic layer deposition (ALD), atomic layer etching (ALE), PEALD, PEALE, and so on.

[0005] Some tools may comprise multiple processing chambers (also called process modules). Some processing chambers may comprise multiple stations to process multiple substrates. For example, the same process may be performed on multiple substrates in the stations. In other examples, different processes may be performed in different processing chambers. For example, different processes may be performed sequentially on the same substrate by moving the substrate from one processing chamber to another.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0006] During processing, a substrate is arranged on a substrate support such as a pedestal or an electrostatic chuck (ESC) in a station. A gas delivery system supplies a gas mixture (e.g., comprising one or more process gases, vaporized precursors, etc.) to the processing chamber to treat the substrate. Plasma may be struck to enhance chemical reactions in the processing chamber.SUMMARY

[0007] A substrate processing system for processing semiconductor substrates comprises a processing chamber and an exhaust system coupled to the processing chamber. The processing chamber comprises a plurality of stations. Each of the plurality of stations comprises a well in which a substrate support is arranged to support a semiconductor substrate. The well comprises an exhaust port. The exhaust system is arranged under the processing chamber. The exhaust system comprises a plurality of valves, a plurality of pipes connected to the plurality of valves, and a pump connected to the plurality of pipes through an exhaust valve. Each of the plurality of valves is arranged directly under the exhaust port of the respective well.

[0008] In additional features, the substrate processing system further comprises a controller configured to close the plurality of valves during processing of the semiconductor substrates in the processing chamber.

[0009] In additional features, the well comprises an insert surrounding at least a portion of the substrate support.

[0010] In additional features, the substrate processing system further comprises a gas supply system and a controller. The gas supply system is configured to supply a gas to the processing chamber to process the semiconductor substrates. The controller is configured to close the plurality of valves before supplying the gas to the processing chamber and during processing of the semiconductor substrates in the processing chamber.

[0011] In additional features, the substrate processing system further comprises a top plate arranged on the processing chamber above the plurality of stations. The top plate comprises a plurality of cavities in a substrate-facing portion of the top plate. A plurality of showerheads is arranged in the plurality of cavities, respectively. A plurality of inserts is arranged in the plurality of cavities, respectively. Each of the plurality of inserts is arranged around a respective one of the plurality of showerheads.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0012] In additional features, the top plate is made of a metallic material. The plurality of inserts is made of an electrically insulating material.

[0013] In additional features, each of the plurality of showerheads comprises a base portion and a stem portion. Each of the plurality of inserts comprises a first insert arranged around the base portion and a second insert arranged around the stem portion.

[0014] In additional features, the first insert comprises a disc-shaped portion and an annular portion. The disc-shaped portion is arranged on top of the base portion of the respective showerhead. The annular portion extends from an outer edge of the discshaped portion. The annular portion is arranged around the base portion of the respective showerhead.

[0015] In additional features, the disc-shaped portion of the first insert comprises a hole in a center of the disc-shaped portion. The second insert comprises a disc-shaped member, a cylindrical member, and a through hole. The disc-shaped member is arranged in the hole in the center of the disc-shaped portion of the first insert. The cylindrical member extends from a center of the disc-shaped member of the second insert. The through hole extends through a center of the second insert. The through hole surrounds the stem portion of the respective showerhead.

[0016] In additional features, the top plate comprises a shallow well in a top portion of the top plate. The substrate processing system further comprises a cooling system and a second. The cooling system is arranged on the top plate. The cooling system is configured to supply a coolant to a plurality of components of the substrate processing system. The sensor is disposed in the well to detect a leak of the coolant from the cooling system.

[0017] In additional features, the substrate support comprises a base portion and a stem portion. The well comprises an insert surrounding the stem portion of the substrate support. The insert comprises an annular portion, a first arcuate portion, and a second arcuate portion. The first arcuate portion extends from the annular portion towards a bottom of the well. The second arcuate portion extends from the annular portion towards the bottom of the well. The first arcuate portion and the second arcuate portion are radially spaced apart defining gaps between ends of the first arcuate portion and the second arcuate portion.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0018] In additional features, the first arcuate portion has a smaller arc length than the second arcuate portion.

[0019] In additional features, the first and second arcuate portions have the same height.

[0020] In additional features, the annular portion comprises a plurality of notches along an inner edge of the annular portion.

[0021] In additional features, the substrate processing system further comprises a liner arranged on the processing chamber above the plurality of stations. The top plate is arranged on the liner.

[0022] In additional features, the liner comprises a plurality of holes. Each of the holes aligns with the respective well of the plurality of stations.

[0023] In additional features, the plurality of valves is upstream of the plurality of pipes.

[0024] In additional features, diameters of the plurality of pipes increases from the plurality of valves to the exhaust valve.

[0025] In additional features, the plurality of valves comprises a first valve, a second valve, a third valve, and a fourth valve. The plurality of pipes comprises first through seventh pipes. The first pipe is connected to the first and second valves. The second pipe is connected to the third and fourth valves. The third pipe is connected to a center of the first pipe. The fourth pipe is connected to a center of the second pipe. The fifth and sixth pipes are connected to the third and fourth pipes, respectively. The seventh pipe is connected to the fifth and sixth pipes and to the exhaust valve.

[0026] In additional features, diameters of the first and second pipes are less than diameters of third, fourth, fifth, and sixth pipes. Diameters of the third, fourth, fifth, and sixth pipes is less than a diameter of the seventh pipe.

[0027] In additional features, the first and second pipes are parallel to each other and parallel to a bottom of the processing chamber. The third and fourth pipes are perpendicular to the first and second pipes, respectively. The fifth and sixth pipes are perpendicular to the third and fourth pipes. The seventh pipe is perpendicular to the fifth and sixth pipes and parallel to the bottom of the processing chamber.

[0028] In still other features, a processing chamber for processing semiconductor substrates comprises a plurality of stations and a plurality of valves. Each of the pluralityAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAof stations comprises a well in which a substrate support is arranged to support a semiconductor substrate. The well comprises an exhaust port. The plurality of valves is coupled to a plurality of pipes arranged under the processing chamber. Each of the plurality of valves is arranged directly under the exhaust port of the respective well. Each of the plurality of valves is connected directly to the exhaust port of the respective well.

[0029] In additional features, the plurality of valves is upstream of the plurality of pipes.

[0030] In additional features, substrate processing system comprises the processing chamber and a controller. The controller is configured to close the plurality of valves during processing of the semiconductor substrates in the processing chamber.

[0031] In additional features, the well comprises an insert surrounding at least a portion of the substrate support.

[0032] In additional features, substrate processing system comprises the processing chamber, a gas supply system, and a controller. The gas supply system is configured to supply a gas to the processing chamber to process the semiconductor substrates. The controller is configured to close the plurality of valves before supplying the gas to the processing chamber and during processing of the semiconductor substrates in the processing chamber.

[0033] In additional features, the processing chamber further comprises a top plate arranged on the processing chamber above the plurality of stations. The top plate comprises a plurality of cavities in a substrate-facing portion of the top plate. A plurality of showerheads is arranged in the plurality of cavities, respectively. A plurality of inserts is arranged in the plurality of cavities, respectively. Each of the plurality of inserts is arranged around a respective one of the plurality of showerheads.

[0034] In additional features, the top plate is made of a metallic material. The plurality of inserts is made of an electrically insulating material.

[0035] In additional features, each of the plurality of showerheads comprises a base portion and a stem portion. Each of the plurality of inserts comprises a first insert arranged around the base portion and a second insert arranged around the stem portion.

[0036] In additional features, the first insert comprises a disc-shaped portion and an annular portion. The disc-shaped portion is arranged on top of the base portion of the respective showerhead. The annular portion extends from an outer edge of the disc-Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAshaped portion. The annular portion is arranged around the base portion of the respective showerhead.

[0037] In additional features, the disc-shaped portion of the first insert comprises a hole in a center of the disc-shaped portion. The second insert comprises a disc-shaped member, a cylindrical member, and a through hole. The disc-shaped member is arranged in the hole in the center of the disc-shaped portion of the first insert. The cylindrical member extends from a center of the disc-shaped member of the second insert. The through hole extends through a center of the second insert. The through hole surrounds the stem portion of the respective showerhead.

[0038] In additional features, the top plate comprises a shallow well in a top portion of the top plate. The processing chamber further comprises a cooling system and a sensor. The cooling system is arranged on the top plate. The cooling system is configured to supply a coolant to a plurality of components of the processing chamber. The sensor is disposed in the well to detect a leak of the coolant from the cooling system.

[0039] In additional features, the substrate support comprises a base portion and a stem portion. The well comprises an insert surrounding the stem portion of the substrate support. The insert comprises an annular portion, a first arcuate portion, and a second arcuate portion. The first arcuate portion extends from the annular portion towards a bottom of the well. The second arcuate portion extends from the annular portion towards the bottom of the well. The first arcuate portion and the second arcuate portion are radially spaced apart defining gaps between ends of the first arcuate portion and the second arcuate portion.

[0040] In additional features, the first arcuate portion has a smaller arc length than the second arcuate portion.

[0041] In additional features, the first and second arcuate portions have the same height.

[0042] In additional features, the annular portion comprises a plurality of notches along an inner edge of the annular portion.

[0043] In additional features, the processing chamber further comprises a liner arranged on the processing chamber above the plurality of stations. The top plate is arranged on the liner.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0044] In additional features, the liner comprises a plurality of holes. Each of the holes aligns with the respective well of the plurality of stations.

[0045] In additional features, a substrate processing system comprises the processing chamber and further comprises a pump connected to the plurality of pipes through an exhaust valve.

[0046] In additional features, diameters of the plurality of pipes increases from the plurality of valves to the exhaust valve.

[0047] In additional features, the plurality of valves comprises a first valve, a second valve, a third valve, and a fourth valve. The plurality of pipes comprises first through seventh pipes. The first pipe is connected to the first and second valves. The second pipe is connected to the third and fourth valves. The third pipe is connected to a center of the first pipe. The fourth pipe is connected to a center of the second pipe. The fifth and sixth pipes are connected to the third and fourth pipes, respectively. The seventh pipe is connected to the fifth and sixth pipes and to the exhaust valve.

[0048] In additional features, diameters of the first and second pipes are less than diameters of third, fourth, fifth, and sixth pipes. Diameters of the third, fourth, fifth, and sixth pipes is less than a diameter of the seventh pipe.

[0049] In additional features, the first and second pipes are parallel to each other and parallel to a bottom of the processing chamber. The third and fourth pipes are perpendicular to the first and second pipes, respectively. The fifth and sixth pipes are perpendicular to the third and fourth pipes. The seventh pipe is perpendicular to the fifth and sixth pipes and parallel to the bottom of the processing chamber.

[0050] In still other features, a substrate processing system for processing semiconductor substrates comprises a processing chamber and a plurality of stations arranged in the processing chamber to process the semiconductor substrates. Rach of the plurality of stations comprises a well, a substrate support arranged in the well, and an insert arranged in the well. The substrate support is configured to support a semiconductor substrate. The insert surrounding at least a portion of the substrate support.

[0051] In additional features, the well in each of the plurality of stations comprises an exhaust port. The substrate processing system further comprises a plurality of valves.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAEach of the plurality of valves is arranged directly under the exhaust port of the respective well and is connected directly to the exhaust port of the respective well.

[0052] In additional features, the substrate processing system further comprises a controller configured to close the plurality of valves during processing of the semiconductor substrates in the processing chamber.

[0053] In additional features, the substrate processing system further comprises a gas supply system and a controller. The gas supply system is configured to supply a gas to the processing chamber to process the semiconductor substrates. The controller is configured to close the plurality of valves before supplying the gas to the processing chamber and during processing of the semiconductor substrates in the processing chamber.

[0054] In additional features, the substrate processing system further comprises a top plate arranged on the processing chamber above the plurality of stations. The top plate comprises a plurality of cavities in a substrate-facing portion of the top plate. A plurality of showerheads is arranged in the plurality of cavities, respectively. A plurality of inserts is arranged in the plurality of cavities, respectively. Each of the plurality of inserts is arranged around a respective one of the plurality of showerheads.

[0055] In additional features, the top plate is made of a metallic material. The plurality of inserts is made of an electrically insulating material.

[0056] In additional features, each of the plurality of showerheads comprises a base portion and a stem portion. Each of the plurality of inserts comprises a first insert arranged around the base portion and a second insert arranged around the stem portion.

[0057] In additional features, the first insert comprises a disc-shaped portion and an annular portion. The disc-shaped portion is arranged on top of the base portion of the respective showerhead. The annular portion extends from an outer edge of the discshaped portion. The annular portion is arranged around the base portion of the respective showerhead.

[0058] In additional features, the disc-shaped portion of the first insert comprises a hole in a center of the disc-shaped portion. The second insert comprises a disc-shaped member, a cylindrical member, and a through hole. The disc-shaped member is arranged in the hole in the center of the disc-shaped portion of the first insert. The cylindrical member extends from a center of the disc-shaped member of the second insert. TheAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAthrough hole extends through a center of the second insert. The through hole surrounds the stem portion of the respective showerhead.

[0059] In additional features, the top plate comprises a shallow well in a top portion of the top plate. The substrate processing system further comprises a cooling system and a sensor. The cooling system is arranged on the top plate. The cooling system is configured to supply a coolant to a plurality of components of the substrate processing system. The sensor is disposed in the well to detect a leak of the coolant from the cooling system.

[0060] In additional features, the substrate support comprises a base portion and a stem portion. The well comprises an insert surrounding the stem portion of the substrate support. The insert comprises an annular portion, a first arcuate portion, and a second arcuate portion. The first arcuate portion extends from the annular portion towards a bottom of the well. The second arcuate portion extends from the annular portion towards the bottom of the well. The first arcuate portion and the second arcuate portion are radially spaced apart defining gaps between ends of the first arcuate portion and the second arcuate portion.

[0061] In additional features, the first arcuate portion has a smaller arc length than the second arcuate portion.

[0062] In additional features, the first and second arcuate portions have the same height.

[0063] In additional features, the annular portion comprises a plurality of notches along an inner edge of the annular portion.

[0064] In additional features, the substrate processing system further comprises a liner arranged on the processing chamber above the plurality of stations. The top plate is arranged on the liner.

[0065] In additional features, the liner comprises a plurality of holes. Each of the holes aligns with the respective well of the plurality of stations.

[0066] In additional features, the substrate processing system further comprises a plurality of pipes connected to the plurality of valves and a pump connected to the plurality of pipes through an exhaust valve.

[0067] In additional features, the plurality of valves is upstream of the plurality of pipes.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0068] In additional features, diameters of the plurality of pipes increases from the plurality of valves to the exhaust valve.

[0069] In additional features, the plurality of valves comprises a first valve, a second valve, a third valve, and a fourth valve. The plurality of pipes comprises first through seventh pipes. The first pipe is connected to the first and second valves. The second pipe is connected to the third and fourth valves. The third pipe is connected to a center of the first pipe. The fourth pipe is connected to a center of the second pipe. The fifth and sixth pipes are connected to the third and fourth pipes, respectively. The seventh pipe is connected to the fifth and sixth pipes and to the exhaust valve.

[0070] In additional features, diameters of the first and second pipes are less than diameters of third, fourth, fifth, and sixth pipes. Diameters of the third, fourth, fifth, and sixth pipes is less than a diameter of the seventh pipe.

[0071] In additional features, the first and second pipes are parallel to each other and parallel to a bottom of the processing chamber. The third and fourth pipes are perpendicular to the first and second pipes, respectively. The fifth and sixth pipes are perpendicular to the third and fourth pipes. The seventh pipe is perpendicular to the fifth and sixth pipes and parallel to the bottom of the processing chamber.

[0072] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGS

[0073] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0074] FIG. 1 schematically shows an example of a quad station module (QSM) for processing substrates according to the present disclosure;

[0075] FIG. 2 shows an example of a functional block diagram of a substrate processing system for processing the substrates in the QSM of FIG. 1 according to the present disclosure;

[0076] FIG. 3 shows a top view of the QSM of FIG. 1 ;Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0077] FIG. 4 shows a cross-sectional view of the QSM taken along line A-A shown in FIG. 3;

[0078] FIG. 5 shows a bottom view of an example of a top plate of the QSM of FIG. 1 ;

[0079] FIG. 6 shows a top view of the top plate of the QSM of FIG. 1 ;

[0080] FIG. 7 shows a side view of the top plate of the QSM of FIG. 1 ;

[0081] FIG. 8 shows a cross-sectional view of the top plate of the QSM taken long lines B-B shown in FIGS. 5 and 6;

[0082] FIG. 9 shows a side view of an example of an insert used in the top plate for a showerhead according to the present disclosure;

[0083] FIG. 10 shows a bottom view of the insert of FIG. 9;

[0084] FIG. 11 shows a top view of the insert of FIG. 9;

[0085] FIG. 12 shows a cross-sectional view of the insert of FIG. 9 taken long line C-C shown in FIG. 11 ;

[0086] FIG. 13 shows a side view of an example of an insert used in the top plate for a stem of a showerhead according to the present disclosure;

[0087] FIG. 14 shows a top view of the insert of FIG. 13;

[0088] FIG. 15 shows a bottom view of the insert of FIG. 13;

[0089] FIG. 16 shows a cross-sectional view of the insert of FIG. 13 taken long line D-D shown in FIG. 13;

[0090] FIG. 17 shows a top view of the top plate of the QSM comprising showerheads and the stem inserts of FIG. 13 according to the present disclosure;

[0091] FIG. 18 shows a bottom view of the top plate of the QSM comprising showerheads and the inserts of FIG. 9 around the showerheads according to the present disclosure;

[0092] FIG. 19 shows a cross-sectional view of the top plate of FIGS. 17 and 18 taken along line E-E shown in FIGS. 17 and 18, showing the showerheads and the inserts of FIGS. 9 and 13 around the showerheads according to the present disclosure;

[0093] FIG. 20 shows a bottom view of an example of an insert used in wells of stations of the QSM of FIG. 1 according to the present disclosure;Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0094] FIG. 21 shows a top view of the insert of FIG. 20;

[0095] FIG. 22 shows a cross-sectional view of the insert of FIGS. 20 and 21 taken along line F-F shown in FIG. 20;

[0096] FIG. 23 shows a cross-sectional view of the insert of FIGS. 20 and 21 taken along line G-G shown in FIG. 21;

[0097] FIG. 24 shows a side view of the insert of FIGS. 20 and 21 ;

[0098] FIG. 25 shows a front view of the insert of FIGS. 20 and 21 ;

[0099] FIG. 26 shows a back view of the insert of FIGS. 20 and 21 ;

[0100] FIG. 27 shows a cross-sectional view of a well of a station of the QSM of FIG. 1 comprising a pedestal and the insert of FIGS. 20 and 21 according to the present disclosure;

[0101] FIG. 28 shows a top view of an example of a liner installed on top of the four stations of the QSM of FIG. 1 according to the present disclosure;

[0102] FIG. 29 shows a side view of the liner of FIG. 28;

[0103] FIG. 30 shows a perspective view of a section of the liner of FIG. 28;

[0104] FIG. 31 shows a cross-sectional view of the liner of FIG. 28 taken along line H- H shown in FIG. 28;

[0105] FIG. 32 shows a cross-sectional view of the QSM of FIG. 1 taken along a line passing through centers of stations 2 and 3, without the top plate and with the liner and the inserts in the wells of the stations 2 and 3 according to the present disclosure;

[0106] FIG. 33 shows a cross-sectional view of the QSM of FIG. 1 taken along a line passing through centers of stations 2 and 3, with the top plate, with the corresponding showerheads and inserts in the top plate, and with the liner above and the inserts within the wells of the stations 2 and 3 according to the present disclosure;

[0107] FIG. 34 shows FIG. 33 without the inserts in the wells of the stations 2 and 3;

[0108] FIG. 35 shows a top view of the QSM of FIG. 1 without the top plate and without any inserts, showing exhaust ports in the wells of the stations of the QSM;

[0109] FIG. 36 shows a bottom view of the QSM of FIG. 1, showing the exhaust ports under the wells of the stations of the QSM;Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0110] FIG. 37 shows a front view of exhaust piping connected to the exhaust ports under the wells of the stations of the QSM according to the present disclosure;

[0111] FIG. 38 shows a back view of the exhaust piping under the QSM; and

[0112] FIG. 39 schematically shows the exhaust piping under the QSM.

[0113] In the drawings, reference numbers may be reused to identify similar and / or identical elements.DETAILED DESCRIPTION

[0114] While the present disclosure is described using a quad station module (QSM) as an example, the teachings of the present disclosure are applicable to any processing chamber in which semiconductor substrate can be processed. For example, the processing chamber may comprise any number of stations.

[0115] Some processes (e.g., chemical vapor deposition or CVD) use chemistries (e.g., precursors) that are extremely expensive. Therefore, minimizing the amount of chemistry used during processing of substrates can be cost-effective. Further, some chemistries are also extremely toxic for humans and the environment. Therefore, minimizing the amount of chemistry used can be useful.

[0116] One way to minimize the amount of chemistry used is to fill the processing chamber (e.g., a QSM) with the chemistry and allow the substrates to soak the chemistry for a predetermined period of time. After the substrates soak the chemistry for the predetermined period of time, the processing chamber can be evacuated using an exhaust system connected to the QSM. Since the chemistry is not continuously flowed through the processing chamber to process the substrates, the amount of chemistry used during the processing of the substrates is reduced by using the soaking method.

[0117] However, the soaking method uses a large quantity of chemistry since the QSM typically has a large processing volume that needs to be filled with the chemistry in the soaking method. Specifically, the processing volume of the QSM comprises spaces around showerheads in a top plate of the QSM and spaces around pedestals in wells of the stations of the QSM. Additionally, a portion of the exhaust system also adds to the processing volume. For example, the exhaust system comprises piping that extends from the bottom of the wells of the stations to an exhaust valve. While the exhaust valve is closed during the soaking process, when the QSM is filled with the chemistry to carry out the soaking, the chemistry fills up not only the spaces in the top plate and the wells butAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAalso fills up a portion of the exhaust system between the bottom of the wells of the stations to the exhaust valve. The chemistry in the portion of the exhaust system between the bottom of the wells of the stations to the exhaust valve is entirely unnecessary to soak the substrates and is simply wasted when evacuated. Accordingly, far more chemistry than that is necessary to soak the substrates fills up the processing volume of the QSM and is evacuated after the substrates are soaked for the predetermined period of time.

[0118] In the present disclosure, the processing volume of the QSM is reduced using various techniques to minimize the amount of chemistry used to process the substrates, particularly in the soaking method. The reduced processing volume of the QSM requires far less chemistry, which reduces the cost of the chemistry used to soak the substrates. As described below in detail, the techniques comprise using various inserts in the top plate and in the wells of the stations, which reduce the processing volume of the QSM. Additionally, the techniques comprise using isolation valves right at the bottom of the wells of the stations. The isolation valves are closed when the QSM is filled with the chemistry. The isolation valves eliminate the portion of the exhaust system between the bottom of the wells of the stations to the exhaust valve from the processing volume of the QSM. Eliminating the portion of the exhaust system further reduces the processing volume of the QSM, which in turn further reduces the amount and cost of the chemistry used to soak the substrates. Additionally, a liner disposed above the stations and under the top plate is made thicker to further reduce the processing volume of the QSM. The techniques of the present disclosure reduce the processing volume of the QSM without impacting functionality and performance of the processes performed on the substrates in the reduced volume of the QSM.

[0119] Further, in the present disclosure, the weight of the top plate, which typically weighs hundreds of pounds, is also reduced. The top plate is typically a solid rectangular block of a metallic material (e.g., aluminum or an alloy thereof) that lies on top of the liner to enclose the stations of the QSM. A top portion of the top plate is typically flat. As described below in detail, various subsystems including gas boxes, radio frequency (RF) power supplies, and so on are arranged on the top portion of the top plate. Additionally, a cooling subsystem is arranged on the top portion of the top plate to cool various subsystems and components of the QSM. Sometimes, a coolant used in the cooling subsystem leaks. Typically, the coolant leaks on the top portion of the top plate. The leaks are difficult to detect and can cause problems before the leaks are detected.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0120] In the present disclosure, some of the material is removed from the top portion of the top plate, which forms a shallow well in the top portion of the top plate. The removal of the material reduces the weight of the top plate. Additionally, any coolant that leaks from the cooling subsystem is trapped in the shallow well formed in the top portion of the top plate. Sensors installed in the shallow well can quickly detect the leaks before the leaks can cause problems. These and many other features of the present disclosure are described below in detail.

[0121] The present disclosure is organized in various sections as follows. In Section 1 , examples of a quad station module (QSM) and a substrate processing system for processing the substrates in the QSM are shown and described with reference to FIGS.1 and 2. In Section 2, views of the QSM and various views of a top plate of the QSM without any inserts of the present disclosure are shown and described with reference to FIGS. 3-8. In section 3, various views of inserts for the top plate that are used with showerheads according to the present disclosure are shown and described with reference to FIGS. 9-16. In Section 4, various views of the top plate comprising the inserts are shown and described with reference to FIGS. 17-19. In Section 5, various views of inserts for wells of the stations of the QSM are shown and described with reference to FIGS. 20-27. In Section 6, various views of a liner for the stations of the QSM are shown and described with reference to FIGS. 28-31. In Section 7, various views of the QSM with the top plate and the wells along with the respective inserts, without the inserts in the wells, and with the liner are shown and described with reference to FIGS. 32-34 In Section 8, various views of an exhaust system of the present disclosure are shown and described with reference to FIGS. 35-39.

[0122] Throughout the present disclosure, a reference axis in descriptions of coaxial configurations is a vertical axis of the QSM shown by a dotted line 101. The vertical axis 101 is perpendicular to a horizontal axis 103 (also shown by dotted line) in which a top plate of the QSM lies.SECTION 1 : QSM AND SUBSTRATE PROCESSING SYSTEM

[0123] FIG. 1 schematically shows an example of a quad station module (QSM) 100 for processing substrates. The QSM 100 comprises four stations STN1 102-1, STN2 102-2, STN3 102-3, and STN4 102-4. The four stations are collectively called the stations 102 and individually called the station 102. The four stations 102 are identical. The description of any one of the stations 102 applies to all the stations 102. Each station 102 comprisesAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAa well 104. The wells of the four stations 102 are shown at 104-1 , 104-2, 104-3, and 104-4. The wells of the four stations 102 are collectively called the wells 104 and individually called the well 104. The four wells 104 are identical. The description of any one of the wells 104 applies to all the wells 104.

[0124] A pedestal (also called a substrate support, shown in subsequent figures) is arranged each well 104 of the stations 102 to process substrates such as semiconductor wafers. A robot (R) 106 transports the substrates between the stations 102. The robot 106 also transports the substrates between the stations 102 of the QSM 100. A top plate 110 is arranged on top of the stations 102. While the top plate 110 is schematically shown as being on a side of the stations 102, the top plate 110 covers the top of the stations 102. The top plate 110 and the stations 102 form a processing chamber 111. The processing chamber 111 encloses the stations 102. In the processing chamber 111 , the wells 104 of the stations 102 form a processing volume 113 under the top plate 110.

[0125] To process the substrates in the stations 102, a plurality of gas boxes 112 are arranged on the top plate 110. The gas boxes 112 supply various process gases to the stations 102 via respective showerheads (shown in subsequent figures). The gas boxes 112 also comprise one or more vaporized precursor subsystems. The vaporized precursor subsystems vaporize one or more precursors. The vaporized precursor subsystems supply the vaporized precursors to the stations 102 via respective showerheads.

[0126] In some processes, one or more gases may be mixed with the vaporized precursors to form gas mixtures. The gas mixtures may be supplied to the stations 102 via the respective showerheads. In some examples, a single gas box (and a vaporized precursor subsystem) may be common to all the stations 102. In other examples, separate gas boxes (and vaporized precursor subsystems) may be used to supply process gases, vaporized precursors, and / or gas mixtures to the stations 102.

[0127] While not shown, the gas boxes 112 comprise a plurality gas sources, liquid sources for the vaporized precursor subsystems, a plurality of valves, mass flow controllers (MFCs) to control the flow of the gases and vaporized precursors, and weldments and manifolds to supply the gases and the vaporized precursors as described above. In general, the gas boxes 112 are called a gas supply subsystem 112. The gas supply subsystem 112 comprises all of the components of the gas boxes 112 described above.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0128] A plurality of radio frequency (RF) power supplies 114 are arranged on the top plate 110. The RF power supplies supply RF power to the stations 102 to strike plasma when one or more process gases, vaporized precursors, and / or gas mixtures are supplied to the stations 102. For example, an RF power supply may comprise a high-frequency (HF) RF power supply and a low-frequency (LF) RF power supply. The RF power supplies 114 comprise one or more RF signal generators and one or more matching circuits. In some examples, a single RF power supply may be common to all the stations 102. In other examples, separate RF power supplies may be used to supply RF power to the stations 102.

[0129] To cool various components of the QSM 100 (e.g., the RF power supplies 114 and the pedestals in the stations 102), a cooling subsystem 116 is arranged on the top plate 110 of the QSM 100. The cooling subsystem 116 supplies one or more coolants to the various components of the QSM 100. One or more leak detection sensors 154 (shown in FIG. 2) are disposed in the top plate 110 to detect coolant leaks on the top plate 110.

[0130] An exhaust system 120 is coupled to the QSM 100. The exhaust system 120 is shown and described below in detail with reference to FIGS. 35-39. Briefly, the exhaust system 120 comprises a pump and one or more valves. The exhaust system 120 evacuates process gases and reaction byproducts from the stations 102. The pump of the exhaust system 120 also maintains pressure in the QSM 100 during processing.

[0131] FIG. 2 shows a functional block diagram of a substrate processing system 150 for processing the substrates in the QSM 100 shown FIG. 1. The substrate processing system 150 comprises all the components shown in FIG. 1. Additionally, the substrate processing system 150 comprises a system controller (simply the controller) 152. The controller 152 controls the various components of the QSM 100 and the substrate processing system 150. Elements shown in FIG. 2 that are already described with reference to FIG. 1 are not described again for brevity. While not shown in FIG. 2, the stations 102 and the top plate 110 form the processing chamber 111 that encloses the stations 102 in the processing volume 113 as described above with reference to FIG. 1.

[0132] Each station 102 comprises a substrate support (pedestal). The pedestals of the four stations 102 are shown at 130-1 , 130-2, 130-3, and 130-4. The pedestals of the four stations 102 are collectively called the pedestals 130 and individually called the pedestal 130. The four pedestals 130 are identical. The description of any one of the pedestalsAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA130 applies to all the pedestals 130. The pedestals 130 are arranged in the respective wells 104 of the stations 102.

[0133] Each pedestal 130 comprises a base portion (also called a platen) and a stem portion. The base portions of the pedestals 130 are shown at 131-1, 131-2, 131-3, and 131-4. The base portions of the pedestals 130 are collectively called the base portions 131 and individually called the base portion 131. The four base portions 131 are identical. The description of any one of the base portions 131 applies to all the base portions 131. The stem portions of the pedestals 130 are shown at 133-1, 133-2, 133-3, and 133-4. The stem portions of the pedestals 130 are collectively called the stem portions 133 and individually called the stem portion 133. The four stem portions 133 are identical. The description of any one of the stem portions 133 applies to all the stem portions 133.

[0134] The base portions 131 of the pedestals 130 are generally cylindrical. The stem portions 133 of the pedestals 130 are also generally cylindrical. The stem portions 133 are smaller in diameter than the base portions 131. The stem portions 133 are coupled to the bottom of the respective base portions 131.

[0135] While not shown, the base portions 131 of the pedestals 130 may comprise one or more heaters, a coolant channel, a temperature sensor, and so on. The controller 152 communicates with the temperature sensors in the base portions 131 of the pedestals 130. The controller 152 controls power supply to the heaters and coolant supply to the coolant channel in each pedestal 130 to regulate the temperature of each pedestal 130.

[0136] In each station 102, a substrate 132 is arranged on top of the base portion 131 of the pedestal 130 for processing. The substrates arranged on the pedestals 130 in the stations 102 are shown at 132-1 , 132-2, 132-3, and 132-4. The substrates are collectively called the substrates 132 and individually called the substrate 132. The four substrates 132 are generally identical (at least geometrically). The description (at least regarding geometry) of any one of the substrates 132 applies to all the substrates 132. A diameter of the substrate 132 is generally less than or equal to a diameter of the base portion 131 of the pedestal 130.

[0137] The top plate 110 comprises four showerheads for the four stations 102. The showerheads of the four stations 102 are shown at 140-1 , 140-2, 140-3, and 140-4. The showerheads of the four stations 102 are collectively called the showerheads 140 and individually called the showerhead 140. The four showerheads 140 are identical. The description of any one of the showerheads 140 applies to all the showerheads 140. TheAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAshowerheads 140 are arranged directly above the substrates 132 and the base portions 131 of the pedestals 130 in the stations 102.

[0138] Each showerhead 140 comprises a base portion and a stem portion. The base portions of the showerheads 140 are shown at 141 -1 , 141 -2, 141 -3, and 141 -4. The base portions of the showerheads 140 are collectively called the base portions 141 and individually called the base portion 141. The four base portions 141 are identical. The description of any one of the base portions 141 applies to all the base portions 141.

[0139] The stem portions of the showerheads 140 are shown at 143-1, 143-2, 143-3, and 143-4. The stem portions of the showerheads 140 are collectively called the stem portions 143 and individually called the stem portion 143. The four stem portions 143 are identical. The description of any one of the stem portions 143 applies to all the stem portions 143.

[0140] The base portions 141 of the showerheads 140 are generally cylindrical. The stem portions 143 of the showerheads 140 are also generally cylindrical. The stem portions 143 are smaller in diameter than the base portions 141. The stem portions 143 are coupled to the top of the respective base portions 141.

[0141] While not shown, the base portions 141 of the showerheads 140 may comprise one or more heaters, a temperature sensor, and so on. While not shown, a coolant channel may be arranged around the stem portion 143 on the top portion of the top plate 110. The controller 152 communicates with the temperature sensors in the base portions 141 of the showerheads 140. The controller 152 controls power supply to the heaters and coolant supply to the coolant channels of the showerheads 140 to regulate the temperatures of the showerheads 140.

[0142] The showerheads 140 are arranged in the top plate 110 directly above the pedestals 130 in the stations 102. The stem portions 143 of the showerheads 140 receive process gases and vaporized precursors from the gas boxes 112 as described above. The base portions 141 of the showerheads 140 are located directly above the substrates 132 arranged on the base portions 131 of the pedestals 130 in the stations 102. The base portions 141 of the showerheads 140 comprise holes (not shown) through which process the gases and vaporized precursors are dispensed in the processing volume 113 towards the substrates 132. A diameter of base portions 141 of the showerheads 140 is generally greater than or equal to the diameters of the substrates 132 and the base portions 131 of the pedestals 130.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0143] To process the substrates 132, the gas boxes 112 supply process gases and vaporized precursors to the stations 102 via the showerheads 140 as described above with reference to FIG. 1. If plasma is used to process the substrates 132, the RF power supplies 114 supply RF power to the showerheads 140 to strike plasma in the stations 102 as described above with reference to FIG. 1.

[0144] One or more leak detection sensors (S) 154 are disposed in a shallow well (described below) in the top plate 110. The leak detection sensors 154 may be disposed at various locations in the shallow well in the top plate 110. When a coolant supplied by the cooling subsystem 116 leaks in the shallow well in the top plate 110, the leak detection sensors 154 detect the leaks.SECTION 2: QSM AND TOP PLATE

[0145] FIG. 3 shows a top view of the QSM 100 shown in FIG. 1. The top plate 110 is omitted in the top view to show the arrangement of the stations 102 in the QSM 100. The pedestals 130 in the stations 102 are also omitted in the top view to show the wells 104 of the stations 102. The top view shows the wells 104 of the stations 102 without the inserts that are added to the wells 104 to reduce the processing volume 113 of the QSM 100 as described below.

[0146] FIG. 4 shows a cross-sectional view of the QSM 100 taken along line A-A shown in FIG. 3. Accordingly, only the wells 104-2 and 104-3 are visible. While not visible, the wells 104-1 and 140-4 are identical to the wells 104-2 and 104-3. The cross-sectional view shows the volume of the wells 104 without the inserts that are added to the wells 104 to reduce the processing volume 113 of the QSM 100 as described below. Each well 104 is generally cylindrical. Each well 104 has a diameter (width) d1 and a height (depth) hi. These dimensions are referenced below when describing the inserts with reference to subsequent figures.

[0147] Each well 104 has a hole 105 in the center at the bottom of the well 104. The holes 105 in the wells 104 are shown at 105-1 , 105-2, 105-3, and 105-4. The holes in the wells 104 are collectively called the holes 105 and individually called the hole 105. The hole 105 is used to mount the pedestal 130 in the well 104. The stem portion 133 of the pedestal 130 is inserted through the hole 105. The diameter of the hole 105 is equal to the diameter of the stem portion 133 of the pedestal 130.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0148] FIGS. 5-7 show various views of an example of the top plate 110 of the QSM 100 shown in FIG. 1. FIG. 5 shows a bottom view of the top plate 110. The top plate 110 comprises four cavities in the bottom portion (substrate-facing portion) of the top plate 110. The four cavities are shown at 200-1 , 200-2, 200-3, and 200-4. The four cavities are collectively called the cavities 200 and individually called the cavity 200. The four cavities 200 are identical. The description of any one of the cavities 200 applies to all the cavities 200.

[0149] The cavities 200 are coplanar. The showerheads 140 are installed in the respective cavities 200 as described below. Each cavity 200 is cylindrical. Each cavity 200 has a diameter (width) d2 and a height (depth) h2 (see FIG. 8). These dimensions are referenced below when describing the inserts with reference to subsequent figures.

[0150] Additionally, top plate 110 comprises four holes. The four holes are shown at 202-1 , 202-2, 202-3, and 202-4. The four holes are collectively called the holes 202 and individually called the hole 202. The four holes 202 are identical. The description of any one of the holes 202 applies to all the holes 202.

[0151] Each hole 202 is cylindrical. Each hole 202 is T-shaped (see cross-sectional view of the top plate 110 shown in FIG. 8). The holes 202 and the respective cavities 200 are concentric (see FIG. 8). The cavities 200 and the holes 202 are coaxial. The centers of the cavities 200 and the holes 202 are also aligned with centers of the respective showerheads 140 along the vertical axis 101 of the QSM 100 (see FIG. 19). Each hole 202 has a diameter (width) d3 at a top end of the T-shape and d6 at a bottom end of the T-shape (see FIG. 8). d3>d6. Each hole 202 (i.e. , the entire T-shape) has a height (depth) h3 (see FIG. 8). These dimensions are referenced below when describing the inserts with reference to subsequent figures.

[0152] The diameter d2 of each cavity 200 is greater than the diameters of the base portions 141 of the showerheads 140. The diameter d3 of each hole 202 is greater than the diameters of the stem portions 143 of the showerheads 140. d2>d3. When the showerheads 140 are installed in the top plate 110, the base portions 141 of the showerheads 140 are arranged in the respective cavities 200 in the top plate 110. The stem portions 143 of the showerheads 140 are arranged in the respective holes 202 in the top plate 110.

[0153] Inserts shown and described below with reference to subsequent figures are arranged in the cavities 200 and in the holes 202 of the top plate 110. The insertsAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAsurround the base portions 141 and the stem portions 143 of the showerheads 140 to electrically insulate the showerheads 140 from the top plate 110 as described below in detail. The geometries of the inserts are also described below with reference to subsequent figures in detail.

[0154] FIG. 6 shows a top view of the top plate 110. The holes 202 in the top plate 110 are visible in the top view. The cavities 200 in the top plate 110 are not visible since the height (depth) h2 of the cavities 200 is less than a height (thickness) T of the top plate 110 as shown in FIG. 8. The cavities 200 do not extend from the bottom to the top of the top plate 110 through the height (thickness) of the top plate 110.

[0155] The top portion of the top plate 110 comprises a shallow well 119. The shallow well 119 is formed by removing some of the material from the top portion of the top plate 110. The material is removed from the top portion of the top plate 110 up to a depth d4. The shallow well 119 lies above cavities 200. A bottom end of the shallow well 119 lies in a plane above a plane which the top ends of the cavities 200 lie. The shallow well 119 and the cavities 200 are disjoint from each other. A sum of the height (depth) h2 of the cavities 200 and the depth d4 of the shallow well 119 is less than the thickness (height) T of the top plate 110. A perimeter of the shallow well 119 is less than a perimeter of the top plate 110. The perimeter of the shallow well 119 is greater than a perimeter of a square or a rectangle comprising the wells 104. The perimeter of a square or a rectangle comprising the wells 104 is shown at 117 in FIGS. 3 and 6.

[0156] FIG. 7 shows a side view of the top plate 110. The cavities 200, the holes 202, and the shallow well 119 are not visible in the side view. The top plate 110 is made of a metallic material (e.g., aluminum or alloy thereof).

[0157] FIG. 8 shows a cross-sectional view of the top plate 110 taken long lines B-B shown in FIGS. 5 and 6. All the dimensions of the cavities 200 and the holes 202 shown are already described above. Therefore, the description is not repeated for brevity. Additionally, a sum of the height (depth) h2 of the cavities 200 and the height (depth) h3 of the holes 202 is equal to the thickness (height) T of the top plate 110.SECTION 3: INSERTS FOR TOP PLATE

[0158] FIGS. 9-12 show various views of an example of an insert 220 for the top plate 110. FIG. 9 shows a side view of the insert 220. FIG. 10 shows a bottom view of the insertAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA220. FIG. 11 shows a top view of the insert 220. FIG. 12 shows a cross-sectional view of the insert 220 taken long line C-C shown in FIG. 11.

[0159] The insert 220 is installed in each cavity 200 in the top plate 110. The inserts 220 are installed around the showerheads 140 when the showerheads 140 are arranged in the cavities 200 (see FIG. 19). Specifically, the inserts 220 are installed around the base portions 141 of the showerheads 140. The inserts 220 are installed in the cavities 200 between the top plate 110 and the base portions 141 of the showerheads 140.

[0160] Each insert 220 is cylindrical. Each insert 220 comprises a disc-shaped member 222 and a ring-shaped (annular) member 224. The annular member 224 extends vertically downwards from an outer edge of the disc-shaped member 222. An outer diameter (OD) of the insert 220 is d2, which is the diameter of the cavities 200. Outer diameters of the disc-shaped member 222 and the annular member 224 are equal to d2. The insert 220 generally has a shape of the letter “C” (see FIG. 12). More particularly, the insert 220 has a shape of the square bracket “[” rotated clockwise by 90 degrees. The insert 220 is a single, unitary, integrated piece.

[0161] The insert 220 and more particularly the annular member 224 of the insert 220 has an inner diameter (ID) of d5. d5<d2. d5 is greater than the diameters of the base portions 141 of the showerheads. Accordingly, d2=d5+(OD-ID) of the insert 220. The disc-shaped member 222 has a height h4. The annular member 224 extends from the disc-shaped member 222 for a distance h5. That is, a height of the annular member 224 is h5. h4+h5=h2.

[0162] The insert 220 is made of an electrically insulating material (e.g., a ceramic material). The insert 220 electrically insulates the base portion 141 of the showerhead 140 from the metallic top plate 110. The insert 220 comprises a hole 226 in the center of the disc-shaped member 222. The hole 226 has a diameter d6. d6 <d5. A depth of the hole 226 is h4. The hole 226 receives another insert 240 that is arranged around the stem portions 143 of the showerheads 140 as described below.

[0163] While one insert 220 is described above, the top plate 110 comprises four of the inserts 220. In the figures, the four inserts 220 may be shown at 220-1 , 220-2, 220-3, and 220-4. The four inserts are collectively called the inserts 220 and individually called the insert 220. The four inserts 220 are identical. The description of any one of the inserts 220 applies to all the inserts 220.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0164] The disc-shaped members 222 of the four inserts 220 are also identical. The four disc-shaped members 222 may be shown at 222-1, 222-2, 222-3, and 222-4. The four disc-shaped members 222 are collectively called the disc-shaped members 222 and individually called the disc-shaped member 222. The description of any one of the discshaped members 222 applies to all the disc-shaped members 222.

[0165] The annular members 224 of the four inserts 220 are also identical. The four annular members 224 may be shown at 224-1 , 224-2, 224-3, and 224-4. The four annular members 224 are collectively called the annular members 224 and individually called the annular member 224. The description of any one of the disc-shaped members 224 applies to all the disc-shaped members 224.

[0166] The holes 226 of the four inserts 220 are also identical. The four holes 226 may be shown at 226-1, 226-2, 226-3, and 226-4. The four holes 226 are collectively called the holes 226 and individually called the hole 226. The description of any one of the holes 226 applies to all the holes 226.

[0167] FIGS. 13-16 show various views of an example of an insert 240. FIG. 13 shows a side view of the insert 240. FIG. 14 shows a top view of the insert 240. FIG. 15 shows a bottom view of the insert 240. FIG. 16 shows a cross-sectional view of the insert 240 taken long line D-D shown in FIG. 13.

[0168] The inserts 240 are installed in the holes 226 of the respective cavities 200 in the top plate 110. The inserts 240 extend through the holes 202 of the top plate 110 up to the bottom of the shallow well 119. The insert 240 surrounds the stem portion 143 of the showerheads 140 as described below.

[0169] The insert 240 is of the shape of the letter “T” similar to the holes 202 in the top plate 110. The insert 240 comprises a disc-shaped member 242 and a cylindrical member 244. The cylindrical member 244 is attached to a center portion of the disc-shaped member 242. The cylindrical member 244 is perpendicular to the disc-shaped member 242. The insert 240 is a single, unitary, integrated piece.

[0170] The insert 240 has a hole 246 that extends along a length of the insert 240 (i.e. , along a length of the cylindrical member 244). The hole 246 extends through the cylindrical member 244 and the disc-shaped member 242. The hole 246 has a diameter d7. The diameter d7 of the hole 246 is greater than or equal to a diameter of the stem portion 143 of the showerheads 140.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0171] The disc-shaped member 242 has the same diameter d3 as the top end of the hole 202 in the top plate 110. The cylindrical member 244 has the diameter d3, which is the diameter of the holes 226 in the inserts 220. d3>d6>d7. The insert 240 has a height h7. h6>h4. h7=T-h2 (see FIGS. 8, 12, and 19).

[0172] When the insert 240 is installed in the top plate 110, the disc-shaped member 242 fits into the corresponding hole 202 in the top plate 110, and the cylindrical member 244 fits into the hole 226 in the corresponding insert 220 (see FIG. 19). The stem portion 143 of the showerhead 140 extends through the hole 246 in the insert 240 and through the hole 202 in the top plate 110 (see FIG. 19).

[0173] Thus, the cylindrical member 244 and the disc-shaped member 242 of the insert 240 surround the stem portion 143 of the showerhead 140. The insert 240 is also made of the electrically insulating material (e.g., the ceramic material). The insert 240 electrically insulates the stem portion 143 of the showerhead 140 from the metallic top plate 110.

[0174] While one insert 240 is described above, the top plate 110 comprises four of the inserts 240. In the figures, the four inserts 240 may be shown at 240-1 , 240-2, 240-3, and 240-4. The four inserts are collectively called the inserts 240 and individually called the insert 240. The four inserts 240 are identical. The description of any one of the inserts 240 applies to all the inserts 240.

[0175] The disc-shaped members 242 of the four inserts 240 are also identical. The four disc-shaped members 242 may be shown at 242-1, 242-2, 242-3, and 242-4. The four disc-shaped members 242 are collectively called the disc-shaped members 242 and individually called the disc-shaped member 242. The description of any one of the discshaped members 242 applies to all the disc-shaped members 242.

[0176] The cylindrical members 244 of the four inserts 240 are also identical. The four cylindrical members 244 may be shown at 244-1, 244-2, 244-3, and 244-4. The four cylindrical members 244 are collectively called the cylindrical members 244 and individually called the cylindrical member 244. The description of any one of the cylindrical members 244 applies to all the cylindrical members 244.

[0177] The holes 246 of the four inserts 240 are also identical. The four holes 246 may be shown at 246-1, 246-2, 246-3, and 246-4. The four holes 246 are collectively calledAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAthe holes 246 and individually called the hole 246. The description of any one of the holes 246 applies to all the holes 246.SECTION 4: TOP PLATE WITH INSERTS

[0178] FIGS. 17-19 show various views of the top plate 110 with the inserts 220, 240 and the showerheads 140 installed in the top plate 110. FIG. 17 shows a top view of the top plate 110. Top ends of four inserts 240 (specifically the top ends of the cylindrical members 244 of the inserts 240) are shown at 244-1 , 244-2, 244-3, and 244-4. The top ends of the stem portions 143 of the showerheads 140 and the top ends of the inserts 240 (specifically the top ends of the cylindrical members 244 of the inserts 240) are visible in the top view.

[0179] FIG. 18 shows a bottom view of the top plate 110 with the showerheads 140 and the inserts 220 installed around the showerheads 140 in the cavities 200 of the top plate 110. The inserts 240 are not visible in the bottom view since the inserts 240 are behind the showerheads 140. The four inserts 220 are shown at 220-1 , 220-2, 220-3, and 220-4. Only the base portions 141 of the showerheads 140 are visible in the bottom view since the stem portions 143 of the showerheads are behind the base portions 141 of the showerheads 140.

[0180] FIG. 19 shows a cross-sectional view of the top plate 110 with the showerheads 140 and the inserts 220, 240 installed in the top plate 110. The cross-section of the top plate 110 is taken along line E-E shown in FIGS. 17 and 18. Accordingly, only the showerheads 140-2, 140-3; the inserts 220-2, 220-3; the inserts 240-2, 240-3; and the holes 202-2, 202-3 are visible. While not visible, the arrangement of the showerheads 140-1, 140-4; the inserts 220-1, 220-4; the inserts 240-1, 240-4; and the holes 202-1, 202-4 is identical.

[0181] The cross-sectional view shows the inserts 220 and 240 installed around the base portions 141 and the stem portions 143 of the showerheads 140, respectively, as described above. Therefore, the description of the installation of the inserts 220 and 240 around the base portions 141 and the stem portions 143 of the showerheads 140 is not repeated for brevity.

[0182] As seen in FIG. 19, the inserts 220 and 240 are concentric with each other. The inserts 220 and 240 are also concentric with the respective showerheads 140. The inserts 220 and 240 are coaxial. The centers of the inserts 220 and 240 are also aligned withAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAthe centers of the respective showerheads 140 along the vertical axis 101 of the QSM 100. In each station 102, the centers of the showerheads 140, the pedestals 130, and the wells 104 are also aligned along the vertical axis 101 of the QSM 100 (see FIGS. 32-34). Therefore, in each station 102, the centers of the inserts 220 and 240, the showerhead 140, the pedestal 130, and the well 104 are also aligned along the vertical axis 101 of the QSM 100.SECTION 5: INSERTS FOR STATION WELLS

[0183] FIGS. 20-27 show an example of an insert for the wells 104. The inserts are used to reduce the volume of the wells 104. Reducing the volume of the wells 104 reduces the processing volume 113 of the processing chamber 111 of the QSM 100. Additionally, the inserts in the wells 104 improve gas flow in the stations 102. The improved gas flow in the stations 102 improves process uniformity when the substrates 132 are processed in the stations 102.

[0184] FIG. 20 shows a bottom view of an insert 300 used in the wells 104 of stations 102. FIG. 21 shows a top view of the insert 300. FIG. 22 shows a cross-sectional view of the insert 300 taken along line F-F shown in FIG. 20. FIG. 23 shows a cross-sectional view of the insert 300 taken along line G-G shown in FIG. 21. FIG. 24 shows a side view of the insert 300. FIG. 25 shows a front view of the insert 300. FIG. 26 shows a back view of the insert 300. FIG. 27 shows a cross-sectional view of the well 104 comprising the pedestal 130 and the insert 300.

[0185] The views in FIGS. 22-26 are shown with the insert 300 oriented as shown in FIG. 21. The side view shown in FIG. 24 shows what is seen when looking into FIG. 21 from the right side of FIG. 21. The front view shown in FIG. 25 shows what is seen when looking into FIG. 21 from the bottom of FIG. 21. The back view shown in FIG. 26 shows what is seen when looking into FIG. 21 from the top of FIG. 21.

[0186] The insert 300 is generally cylindrical. The insert 300 generally surrounds the substrate support 130 in the well 104 (see FIGS 27, 32, and 33). The insert 300 at least partially surrounds at least the stem portion 133 of the substrate support 130. The insert 300 has a distinctive shape as described below. The distinctive shape of the insert 300 not only reduces the volume of the wells 104 but also directs gas flow from under the pedestals 130 back over to the substrates 132 to improve the process uniformity.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0187] The insert 300 comprises three portions. A first portion 302 is an annular portion 302. The second and third portions are two arcuate portions: A first arcuate portion 304 and a second arcuate portion 306. The first and second arcuate portions 304 and 306 extend vertically downwards from the annular portion 302 towards the bottom of the well 104. While the insert 300 is described as having three portions to describe the geometry of the insert 300, the insert 300 is a single, unitary, integrated piece.

[0188] The annular portion 302 defines a hole 301 in the center of the insert 300. A diameter d8 of the hole 301 is the same as an inner diameter (ID) of the annular portion 302. As shown in FIG. 27, d8 is less or equal to than a diameter d9 of the base portions 131 of the pedestals 130. d8 is less than the diameter d1 of the wells 104. d8 is greater than a diameter d10 of the stem portion 133 of the pedestal 130. d10 is less than the diameter of the holes 105 in the wells 104. A height h8 of the insert 300 is less than the height hi of the wells 104. The height h8 is also less than a height h9 of the stem portion 133 of the pedestal 130.

[0189] In FIGS. 20-26, the first arcuate portion 304 has a smaller arc length than the second arcuate portion 306. The first and second arcuate portions 304 and 306 have the same outer diameter as an outer diameter (OD) of the annular portion 302. The OD of the annular portion 302 and the first and second arcuate portions 304 and 306 defines an OD of the insert 300. The OD of the insert 300 is d1 , which is the diameter of the well 104.

[0190] The first and second arcuate portions 304 and 306 have the same inner diameter (ID). The ID of each of the first and second arcuate portions 304 and 306 is the diameter of a dotted circle shown at 305. The ID of each of the first and second arcuate portions 304 and 306 is greater than the ID (d8) of the annular portion 302. The annular portion 302, first arcuate portion 304, and the second arcuate portion 306 are concentric.

[0191] The first arcuate portion 304 and the second arcuate portion 306 are recessed radially outwards from the ID of the annular portion 302. The first arcuate portion 304 and the second arcuate portion 306 do not extend radially inwards beyond the ID of the annular portion 302 as seen in the top view of the insert 300 shown in FIG. 21.

[0192] Each of the first arcuate portion 304 and the second arcuate portion 306 has the same radial width w. The radial width w is a difference between the OD and the ID of the first and second arcuate portions 304 and 306. The radial width w is a difference between the OD of the annular portion 302 and the diameter of the dotted circle 305. The radialAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAwidth w is less than a difference between the ID (shown at d8 in FIG. 27) and OD of the annular portion 302 (shown at d1 in FIG. 27). w=(d1-d8) / 2.

[0193] The annular portion 302 has a height h10. Each of the first arcuate portion 304 and the second arcuate portion 306 has a height hi 1. The height h8 of the insert 300 is a sum of the height h10 of the annular portion 302 and the height hi 1 of the first and second arcuate portions 304, 306. That is, hi 0+h11 =h8.

[0194] The annular portion 302 includes notches along the ID of the annular portion 302. The notches are shown at 310-1, 310-2, 310-3. The notches are collectively called the notches 310 and individually called the notch 310. The notches 310 are generally located 120 degrees apart from each other. The notches 310 provide access to service lift pin assemblies (not shown) located under the base portion 131 of the pedestal 130. The lift pin assemblies actuate lift pins that pass through the base portion 131 of the pedestal 130 to lower and lift the substrate 132 before and after processing.

[0195] The first and second arcuate portions 304, 306 are located diametrically opposite to each other on the lower side of the annular portion 302. The notch 310-1 is proximate to a center of the first arcuate portion 304. The notches 310-2 and 310-3 are proximate to the two ends of the second arcuate portion 306, respectively.

[0196] The first and second arcuate portions 304 and 306 are radially spaced apart from each other. The first and second arcuate portions 304, 306 define gaps 312 and 314 between ends of the first arcuate portion 304 and ends of the second arcuate portion 306. The first gap 312 is defined between first ends of first and second arcuate portions 304 and 306. The second gap 314 is defined between second ends of first and second arcuate portions 304 and 306. The gaps 312 and 314 are of the same size (radial lengths).

[0197] The centers of the gaps 312 and 314 do not lie on the same diameter of the annular portion 302 due to different arc lengths of the first and second arcuate portions 304 and 306. The locations of the gaps 312 and 314 are asymmetric due to the different arc lengths of the first and second arcuate portions 304 and 306. The gaps 312 and 314 allow evacuation of gases and reaction byproducts from the well 104 through exhaust ports of the well 104 (described below with reference to FIGS. 35-39).

[0198] The inserts 300 are made of a metallic material (e.g., aluminum or alloy thereof). Alternatively, the inserts 300 can be made of other materials (e.g., ceramic). The insertsAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA300 occupy and fill empty space in the well 104 to reduce the volume of the well 104 (see FIG. 27). The first and second arcuate portions 304, 306 of the inserts 300 also direct gas flow from under the pedestals 130 back over to the substrates 132 to improve the process uniformity.

[0199] While one insert 300 is described above, the QSM 100 comprises four inserts 300 arranged in the wells 104 of the respective stations 102. In the figures, the four inserts 300 may be shown at 300-1 , 300-2, 300-3, and 300-4. The four inserts are collectively called the inserts 300 and individually called the insert 300. The four inserts 300 are identical. The description of any one of the inserts 300 applies to all the inserts 300.

[0200] As seen in FIG. 27, the insert 300, the well 104, and the pedestal 130 are concentric with each other. The inserts 300 are also concentric with the respective showerheads 140. The centers of the inserts 300, the wells 104, the pedestal 130, and the showerheads 140 of the respective stations 102 are aligned along the vertical axis 101 of the QSM 100 (see FIG. 33). When the insert 300 is installed in the well 104, the annular portion 302 is parallel to the horizontal axis 103. The first and second arcuate portions 304, 306 are parallel to the vertical axis 301.SECTION 6: LINER FOR QSM

[0201] FIGS. 28-31 show an example of a liner 400 installed on top of the four stations 102 of the QSM 100. FIG. 28 shows a top view of the liner 400. FIG. 29 shows a side view of the liner 400. FIG. 30 shows a perspective view of a section of the liner 400. FIG.31 shows a cross-sectional view of the liner 400 taken along line H-H shown in FIG. 28.

[0202] The liner 400 is made of a metallic material (e.g., aluminum or alloy thereof). The liner 400 comprises four sections that are connected together to form the liner 400. Each section is arranged on the well 104 of the respective station 102. FIG. 30 shows an example of one section 402, which is marked as a dotted quadrant in FIG. 28. All four sections are identical.

[0203] While one section 402 is described, the liner 400 comprises four sections arranged above the wells 104 of the respective stations 102. In the figures, the four sections may be shown at 402-1, 402-2, 402-3, and 402-4. The four sections are collectively called the sections 402 and individually called the section 402. The four sections 402 are identical. The description of any one of the sections 402 applies to all the sections 402.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0204] The section 402 is generally rectangular or square. The section 402 comprises a hole 404 in the center. A diameter of the hole 404 is greater than or equal to the diameter d1 of the well 104. Accordingly, the liner 400 comprises four holes. The four holes are shown at 404-1 , 404-2, 404-3, and 404-4. The four holes are collectively called the holes 404 and individually called the hole 404. The holes 404 are identical. The description of any one of the holes 404 applies to all the holes 404.

[0205] Additionally, the section 402 includes a circular cutout 406 at one of four comers of the section 402. Another corner 408 that is diagonally opposite to the cutout 406 may be rounded as shown in FIG. 30.

[0206] When the four sections 402 are installed on the wells 104 of the respective stations 102, the holes 404 align with the wells 104 of the respective stations 102. The cutouts 406 join to form a hole 410. The liner 400 also comprises the hole 410 in the center of the liner 400. The hole 410 is for the robot 106 shown in FIG. 1. The rounded comers 408 form the four comers of the liner 400 as shown at 408-1 , 408-2, 408-3, 408-4. The four comers are collectively called the comers 408 and individually called the corner 408. The comers 408 are identical. The description of any one of the comers 408 applies to all the comers 408.

[0207] The holes 404 are concentric with the wells 104 of the respective stations 102. The holes 404 are also concentric with the inserts 300 in the wells 104 of the respective stations 102. In each station 102, the hole 404, the insert 300, the well 104, the pedestal 130, and the showerhead 140 are concentric with each other. The centers of the hole 404, the insert 300, the well 104, the pedestal 130, and the showerhead 140 are aligned along the vertical axis 101 of the QSM 100 (See FIG. 33).SECTION 7: QSM WITH TOP PLATE, INSERTS, AND LINER

[0208] FIGS. 32-34 various cross-sectional views of the QSM 100. FIG. 32 shows a cross-sectional view of the QSM 100 taken along a line passing through centers of the stations 102-2 and 102-3, without the top plate 110 and with the liner 400 and the inserts 300 in the wells of the stations 102-2 and 102-3. FIG. 32 shows the wells 104-2, 104-3; the inserts 300-2, 300-3; the pedestals 130-2, 130-3; and the liner 400. While not shown, the arrangement of the wells 104-1, 104-4; the inserts 300-1, 300-4; the pedestals 130-1, 130-4; and the liner 400 is identical.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0209] FIG. 33 shows a cross-sectional view of the QSM 100 taken along a line passing through centers of the stations 102-2 and 102-3. The cross-sectional view is shown with the top plate 110; with the showerheads 140 and the corresponding inserts 220, 240 in the top plate 110; and with the liner 400 above and the inserts 300 within the wells 104 of the stations 102-2 and 102-3. FIG. 33 is a combination of FIGS. 19 and 32. The elements shown in FIGS. 19 and 32 are already described above. Therefore, the description is omitted for brevity.

[0210] FIG. 34 shows FIG. 33 without the inserts 300 in the wells 104 of the stations 102-2 and 102-3. A comparison of FIGS. 33 and 34 indicates the reduction in volume of the wells 104 provided by the inserts 300.SECTION 8: EXHAUST SYSTEM

[0211] FIGS. 35-39 show an example of the exhaust system 120 of FIG. 1 in further detail. FIG. 35 shows a top view of the QSM 100 without the top plate 110 and the liner 400 and without any of the inserts 220, 240, 300. FIG. 35 shows four exhaust ports located in the wells 104 of the stations 102 of the QSM 100. The four exhaust ports are shown as P1 , P2, P3, and P4. The four exhaust ports are shown at 500-1 , 500-2, 500-3, and 500-4. The four exhaust ports are collectively called the exhaust ports 500 and individually called the exhaust port 500. The four exhaust ports 500 are identical. The description of any one of the exhaust ports 500 applies to all the exhaust ports 500.

[0212] FIG. 36 shows a bottom view of the QSM 100. FIG. 36 shows the locations of the exhaust ports 500 under the wells 104 of the stations 102 of the QSM 100. Each well 104 has one exhaust port 500. One exhaust port 500 is connected to two adjacent wells 104 and is located between the two adjacent wells 104. The exhaust ports 500 are arranged symmetrically in the wells 104. If the QSM 100 is cut in half through the center vertically or horizontally, the locations of the exhaust ports 500 in one half are mirror images of the locations of the exhaust ports 500 in the other half.

[0213] The exhaust system 120 comprises four isolation valves V1-V4, exhaust piping (described below), an exhaust valve (V5) 510, and a pump 512. The four isolation valves V1-V4 are shown at 502-1 , 502-2, 502-3, and 502-4. The four isolation valves V1-V4 are collectively called the isolation valves 502 and individually called the isolation valve 502. The isolation valves 502 are identical. The description of any one of the isolation valves 502 applies to all the isolation valves 502. The isolation valves 502, the exhaust pipes,Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAthe exhaust valve 510, and the pump 512 are connected to the exhaust ports 500 as described below with reference to FIG. 39.

[0214] FIG. 37 shows a front view of the isolation valves and the exhaust piping connected to the exhaust ports 500 under the wells 104 of the stations 102 of the QSM 100. Only the exhaust ports R1 , P2; the isolation valves V1, V2; and one half of the exhaust piping are visible.

[0215] FIG. 38 shows a back view of the isolation valves and the exhaust piping connected to the exhaust ports 500 under the wells 104 of the stations 102 of the QSM 100. Only the exhaust ports P3, P4; the isolation valves V3, V4; and the other half of the exhaust piping are visible.

[0216] FIG. 39 schematically shows the exhaust system 120 and the exhaust piping under the QSM 100. The isolation valves 502 are connected to the respective exhaust ports 500 immediately under the QSM 100. The isolation valves 502 are located under the exhaust ports 500 immediately below the respective wells 104. The isolation valves 502 are mounted directly under the respective exhaust ports 500. The isolation valves 502 are located at the most upstream points of the exhaust piping.

[0217] The placement of the isolation valves 502 provides the following advantages. The isolation valves 502 disconnect (isolate or cut off) all of the exhaust piping downstream of the isolation valves 502 from the processing volume of the QSM 100. The isolation valves 502 eliminate the portion of the exhaust system 120 between the bottom of the wells 104 of the stations 102 to the exhaust valve 510 from the processing volume of the QSM 100. Eliminating the portion of the exhaust system 120 further reduces the processing volume of the QSM 100 in addition to the volume reduction provided by other techniques described above. The additional volume reduction provided by the isolation valves 502 further reduces the amount and cost of the chemistry used to soak the substrates. Reduction in the amount of chemistry used reduces hazards posed by the toxicity of chemistry for humans and the environment.

[0218] The exhaust piping comprises pipes 520 to 532 as follows. The exhaust piping comprises a first pipe 520 and a second pipe 522. A first end of the first pipe 520 is connected to the first isolation valve V1. A second end of the first pipe 520 is connected to the second isolation valve V2. A first end of the second pipe 522 is connected to the third isolation valve V3. A second end of the second pipe 522 is connected to the fourth isolation valve V4.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA

[0219] The first and second pipes 520, 522 are parallel to each other. The first and second pipes 520, 522 are perpendicular to the vertical axis 101 of the QSM 100. The first and second pipes 520, 522 are parallel to the horizontal axis 103 of the QSM 100. The first and second pipes 520, 522 are parallel to a bottom surface of the QSM 100. The first and second pipes 520, 522 are parallel to a bottom surface of the processing chamber 111. Each of the first and second pipes 520, 522 has a diameter d11.

[0220] A first end of a third pipe 524 is connected to a center of the first pipe 520. The third pipe 524 is perpendicular to the first pipe 520. The third pipe 524 extends vertically downwards from the first pipe 520. The third pipe 524 has a diameter d12. d12>d11. For example, d12 is twice d11.

[0221] A first end of a fourth pipe 526 is connected to a center of the second pipe 522. The fourth pipe 526 is perpendicular to the second pipe 522. The fourth pipe 526 extends vertically downwards from the second pipe 522. The fourth pipe 526 has a diameter d12. d12>d11. For example, d12 is twice d11. The third and fourth pipes 524, 526 are parallel to each other. The third and fourth pipes 524, 526 are parallel to the vertical axis 101 of the QSM 100.

[0222] A first end of a fifth pipe 528 is connected to a second end of the third pipe 524. The fifth pipe 528 is perpendicular to the third pipe 524. The fifth pipe 528 is parallel to the first pipe 520. The fifth pipe 528 has the diameter d12.

[0223] A first end of a sixth pipe 530 is connected to a second end of the fourth pipe 526. The sixth pipe 530 is perpendicular to the fourth pipe 526. The sixth pipe 530 is parallel to the first pipe 520. The sixth pipe 530 has the diameter d12.

[0224] While the fifth and sixth pipes 528, 530 are schematically shown in FIG. 39 as extending towards each other, the fifth and sixth pipes 528, 530 extend away from the third and fourth pipes 524, 526 outwards towards a side of the QSM 100 as shown in FIGS. 37 and 38.

[0225] On the side of the QSM 100, a seventh pipe 532 is connected to the fifth and sixth pipes 528, 530. A first end of the seventh pipe 532 is connected to a second end of the fifth pipe 528. A second end of the seventh pipe 532 is connected to a second end of the sixth pipe 530. The seventh pipe 532 is parallel to the horizontal axis 103 of the QSM 100. The seventh pipe 532 is parallel to the bottom surface of the QSM 100. The seventhAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POApipe 532 is parallel to the bottom surface of the processing chamber 111. The seventh pipe 532 has a diameter d13. d13>d12. For example, d13 is twice d12.

[0226] The exhaust valve 510 is connected to a center of the seventh pipe 532. The exhaust valve 510 is connected to the pump 512. When process gases are introduced into the stations 102 via the showerheads 140, the controller 152 closes the exhaust valve 510 and the isolation valves 502. Accordingly, the entire volume of the exhaust piping is disconnected from the wells 104 of the stations 102. The volume of the wells 104 is already reduced by the inserts 300 as described above. Thus, the processing volume 113 is reduced. The amount of chemistry used to fill the processing volume 113 is also reduced.

[0227] After the substrates 132 are processed, the controller 152 opens the isolation valves 502 and the exhaust valve 510. The pump 512 evacuates the processing volume 113 via the exhaust piping. Further, since the diameters of the pipes increases in the direction of the gas flow through the exhaust piping, contamination of the processing volume 113 is also reduced. Thus, the present disclosure provides the advantages of improved process uniformity and reduced processing cost of the substrates 132.

[0228] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims.

[0229] It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with features of any of the other embodiments, even if that combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.

[0230] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,”Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA“below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0231] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems.

[0232] The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0233] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, non-transitory memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software).

[0234] Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. TheAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAoperational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0235] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process.

[0236] In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control.

[0237] Thus as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0238] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vaporAttorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POAdeposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0239] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

1. Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POACLAIMSWhat is claimed is:

1. A substrate processing system for processing semiconductor substrates, comprising:a processing chamber comprising a plurality of stations, each of the plurality of stations comprising a well in which a substrate support is arranged to support a semiconductor substrate, the well comprising an exhaust port; andan exhaust system coupled to the processing chamber, the exhaust system arranged under the processing chamber, the exhaust system comprising:a plurality of valves, each of the plurality of valves arranged directly under the exhaust port of the respective well;a plurality of pipes connected to the plurality of valves; anda pump connected to the plurality of pipes through an exhaust valve.

2. The substrate processing system of claim 1 further comprising a controller configured to close the plurality of valves during processing of the semiconductor substrates in the processing chamber.

3. The substrate processing system of claim 1 wherein the well comprises an insert surrounding at least a portion of the substrate support.

4. The substrate processing system of claim 1 further comprising:a gas supply system configured to supply a gas to the processing chamber to process the semiconductor substrates; anda controller configured to close the plurality of valves before supplying the gas to the processing chamber and during processing of the semiconductor substrates in the processing chamber.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA5. The substrate processing system of claim 1 further comprising a top plate arranged on the processing chamber above the plurality of stations, wherein the top plate comprises:a plurality of cavities in a substrate-facing portion of the top plate;a plurality of showerheads arranged in the plurality of cavities, respectively; and a plurality of inserts arranged in the plurality of cavities, respectively, each of the plurality of inserts arranged around a respective one of the plurality of showerheads.

6. The substrate processing system of claim 5 wherein:the top plate is made of a metallic material; andthe plurality of inserts is made of an electrically insulating material.

7. The substrate processing system of claim 5 wherein:each of the plurality of showerheads comprises a base portion and a stem portion; andeach of the plurality of inserts comprises a first insert arranged around the base portion and a second insert arranged around the stem portion.

8. The substrate processing system of claim 7 wherein the first insert comprises: a disc-shaped portion arranged on top of the base portion of the respective showerhead; andan annular portion that extends from an outer edge of the disc-shaped portion and that is arranged around the base portion of the respective showerhead.

9. The substrate processing system of claim 8 wherein the disc-shaped portion of the first insert comprises a hole in a center of the disc-shaped portion, and wherein the second insert comprises:a disc-shaped member arranged in the hole in the center of the disc-shaped portion of the first insert;a cylindrical member extending from a center of the disc-shaped member of the second insert; anda through hole that extends through a center of the second insert and that surrounds the stem portion of the respective showerhead.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA10. The substrate processing system of claim 5 wherein the top plate comprises a shallow well in a top portion of the top plate, the substrate processing system further comprising:a cooling system arranged on the top plate, the cooling system being configured to supply a coolant to a plurality of components of the substrate processing system; and a sensor disposed in the well to detect a leak of the coolant from the cooling system.

11. The substrate processing system of claim 1 wherein the substrate support comprises a base portion and a stem portion, wherein the well comprises an insert surrounding the stem portion of the substrate support, and wherein the insert comprises:an annular portion;a first arcuate portion extending from the annular portion towards a bottom of the well; anda second arcuate portion extending from the annular portion towards the bottom of the well,wherein the first arcuate portion and the second arcuate portion are radially spaced apart defining gaps between ends of the first arcuate portion and the second arcuate portion.

12. The substrate processing system of claim 11 wherein the first arcuate portion has a smaller arc length than the second arcuate portion.

13. The substrate processing system of claim 11 wherein the first and second arcuate portions have the same height.

14. The substrate processing system of claim 11 wherein the annular portion comprises a plurality of notches along an inner edge of the annular portion.

15. The substrate processing system of claim 5 further comprising a liner arranged on the processing chamber above the plurality of stations wherein the top plate is arranged on the liner.Attorney Docket No. 12299-1 WOHDP Ref. No. 15545-001325-WO-POA16. The substrate processing system of claim 15 wherein the liner comprises a plurality of holes and wherein each of the holes aligns with the respective well of the plurality of stations.

17. The substrate processing system of claim 1 wherein the plurality of valves is upstream of the plurality of pipes.

18. The substrate processing system of claim 1 wherein diameters of the plurality of pipes increases from the plurality of valves to the exhaust valve.

19. The substrate processing system of claim 1 wherein the plurality of valves comprises a first valve, a second valve, a third valve, and a fourth valve; and wherein the plurality of pipes comprises:a first pipe connected to the first and second valves;a second pipe connected to the third and fourth valves;a third pipe connected to a center of the first pipe;a fourth pipe connected to a center of the second pipe;fifth and sixth pipes connected to the third and fourth pipes, respectively; and a seventh pipe connected to the fifth and sixth pipes and to the exhaust valve.

20. The substrate processing system of claim 19 wherein:diameters of the first and second pipes are less than diameters of third, fourth, fifth, and sixth pipes; anddiameters of the third, fourth, fifth, and sixth pipes is less than a diameter of the seventh pipe.

21. The substrate processing system of claim 19 wherein:the first and second pipes are parallel to each other and parallel to a bottom of the processing chamber;the third and fourth pipes are perpendicular to the first and second pipes, respectively;the fifth and sixth pipes are perpendicular to the third and fourth pipes; and the seventh pipe is perpendicular to the fifth and sixth pipes and parallel to the bottom of the processing chamber.

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