Process inflow system, process inflow control method, and semiconductor process device

Abstract

The present disclosure relates to the technical field of semiconductor processing, and provides a process inflow system, a process inflow control method, and a semiconductor process device. The process inflow system comprises a pipeline system and a control unit. The pipeline system comprises a first pipeline unit and a second pipeline unit. The first pipeline unit comprises a first branch, a first output main pipeline, and a first preset pipeline. The second pipeline unit comprises a second branch, a second output main pipeline, and a second preset pipeline. The control unit controls the pipeline system to alternately execute a pulsed inflow action of a first reaction fluid or a second reaction fluid on a reaction chamber. The pulsed inflow action comprises controlling the first branch or the second branch to be in a pre-flow state; controlling the first branch or the second branch to be in a pressurized state; controlling a pulsed output of the first reaction fluid or the second reaction fluid; and controlling the first branch or the second branch to restore the pre-flow state. By means of precisely controlling two pipeline units to alternately execute an inflow action of a first reaction fluid or a second reaction fluid, a good processing effect is achieved.

Description

Process flow inflow system, process flow inflow control method and semiconductor process equipment Cross-references

[0001] This application claims priority to Chinese application No. 202510481844.0, filed on April 17, 2025. The contents of the above application are incorporated herein by reference. Technical Field

[0002] This disclosure relates to the field of semiconductor processing technology, and in particular to process flow systems, process flow control methods, and semiconductor process equipment. Background Technology

[0003] In semiconductor fabrication, pulse nucleation is required for depositing and filling small-sized, high aspect ratio vias (e.g., CD < 0.2 μm, aspect ratio > 7:1) with tungsten thin films. Pulsed nucleation significantly improves the via-filling capability of tungsten thin film deposition, and many advanced chip manufacturing processes utilize pulsed nucleation tungsten for via filling. Specifically, pulsed nucleation layer (PNL) is a pretreatment technique used before tungsten deposition, primarily applied in the tungsten plugging process in semiconductor manufacturing. PNL technology forms a uniform tungsten nucleation layer by alternately introducing gases such as tungsten hexafluoride (WF6) and silane (SiH4) or diborane (B2H6) into the contact via. This method effectively avoids "gap" defects within the vias, improving the quality and reliability of tungsten deposition.

[0004] However, due to the need to alternately control the pulsed inlet of the two reactant gases, and the requirement to introduce other auxiliary gases during the actual process, precise control of the pulsed inlet has become a pressing technical problem for the industry. Furthermore, preventing unnecessary reactions between the reactant and auxiliary gases during the design of the gas path system is also a problem that needs to be addressed. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this disclosure is to provide a process flow system, a process flow control method, and semiconductor process equipment to solve the problems in the related art.

[0006] The first aspect of this disclosure provides a process feed system, comprising:

[0007] A piping system includes: a first piping unit and a second piping unit; the first piping unit includes a first branch, a first output trunk connected to the output end of the first branch, and a first pre-installed piping; the second piping unit includes a second branch, a second output trunk connected to the output end of the second branch, and a second pre-installed piping; the first and second output trunks are connected to the inlet of the reaction chamber; the input ends of the first and second branches are respectively supplied with a first reaction fluid and a second reaction fluid for the reaction; the first branch is provided with a first mass flow controller and a first branch valve sequentially from the input end to the output end; the second branch is provided with a second mass flow controller and a second branch valve sequentially from the input end to the output end; the input end of the first pre-installed piping is connected between the first mass flow controller and the first branch valve, and is provided with a first pre-installed valve; the input end of the second pre-installed piping is connected between the second mass flow controller and the second branch valve, and is provided with a second pre-installed valve;

[0008] The control unit is used to control the pipeline system to cyclically execute preset process steps. In the preset process steps, the first pipeline unit and the second pipeline unit alternately perform a pulsed flow action of the first reaction fluid or the second reaction fluid into the reaction chamber, including: controlling the first preset valve or the second preset valve to open and the first branch valve or the second branch valve to close so that the first branch or the second branch is in a pre-flow state; controlling the first preset valve or the second preset valve and the first branch valve or the second branch valve to close so that the first branch or the second branch is in a pressurized state; keeping the first output main line or the second output main line open, and controlling the first branch valve or the second branch valve to open to execute the pulsed output of the first reaction fluid or the second reaction fluid; sequentially controlling the first branch valve or the second branch valve to close and the first preset pipeline or the second preset pipeline to open for purging and to prepare for the next pulse output.

[0009] In an embodiment of the first aspect, the process feed system includes at least one of the following:

[0010] a) The first mass flow controller maintains gas output until the pulse output of the first reactant fluid is completed, and stops gas output after the pulse output of the first reactant fluid is completed, until the pulse output of the second reactant fluid is completed and gas output resumes.

[0011] b) The second mass flow controller is configured to have the opposite air output state to that of the first mass controller.

[0012] In an embodiment of the first aspect, the first pipeline unit further includes: at least one first secondary branch, the output end of which is connected to the first output main line via a converged connection with the output end of the first branch; the second pipeline unit further includes: at least one second secondary branch, the output end of which is connected to the second output main line via a converged connection with the output end of the second branch; each of the first secondary branch and the second secondary branch is respectively provided with a first secondary branch valve and a second secondary branch valve.

[0013] In an embodiment of the first aspect, the input terminals of at least one first sub-branch and at least one second sub-branch are used to input other fluids to be introduced into the reaction chamber; wherein other fluids that will react undesirably with the second reaction fluid and do not react with the first reaction fluid are transported through the first sub-branch, and other fluids that will react undesirably with the first reaction fluid and do not react with the second reaction fluid are transported through the second sub-branch.

[0014] In an embodiment of the first aspect, an input terminal of the first sub-branch is used to input the carrier fluid of the first reaction fluid; and an input terminal of the second sub-branch is used to input the carrier fluid of the second reaction fluid.

[0015] In an embodiment of the first aspect, the process inlet system includes at least one of the following: 1) a third mass flow controller located upstream of the first sub-branch valve is provided in the first sub-branch; a fourth mass flow controller located upstream of the second sub-branch valve is provided in the second sub-branch; 2) during the inlet operation, each of the first sub-branch valves and the second sub-branch valves is in an open state; 3) a first main valve and a second main valve are respectively provided in the first output main line and the second output main line; wherein, during the inlet operation, the first main valve and the second main valve are in an open state.

[0016] In an embodiment of the first aspect, the second reaction fluid includes tungsten fluoride gas as a precursor; the first reaction fluid includes a first reducing gas for reducing tungsten; other fluids connected to the first branch in the first output main line along with the first branch include a second reducing gas for reducing tungsten to form a deposit, and an inert gas as a carrier gas for the first reducing gas; other fluids connected to the second branch in the second output main line along with the second branch include a fluorinated cleaning gas, and an inert gas as a carrier gas for the tungsten fluoride gas.

[0017] A second aspect of this disclosure provides a process inflow control method, applied to a process inflow system as described in any of the first aspects, comprising:

[0018] The preset process steps are executed cyclically, including: performing the inflow action of the first reaction fluid, including: controlling the first preset valve to open and the first branch valve to close so that the first branch is in a pre-flow state; controlling the first preset valve and the first branch valve to close so that the first branch is in a pressurized state; keeping the first output main line open and controlling the first branch valve to open to perform the pulse output of the first reaction fluid; sequentially controlling the closing of the first branch valve and the opening of the first preset pipeline for purging and preparation for the next pulse output;

[0019] The process of inleting the second reactive fluid includes: controlling the second preset valve to open and the second branch valve to close so that the second branch is in a pre-flow state; controlling the second preset valve and the second branch valve to close so that the second branch is in a pressurized state; keeping the second output main line open and controlling the second branch valve to open to perform pulse output of the second reactive fluid; and sequentially controlling the second branch valve to close and the second preset pipeline to open for purging and to prepare for the next pulse output.

[0020] In a second aspect embodiment, the process inflow control method further includes:

[0021] In the preset process steps, the first mass flow controller is controlled to maintain gas output before the pulse output of the first reaction fluid is completed, and to stop gas output after the pulse output of the first reaction fluid is completed, until the pulse output of the second reaction fluid is completed and gas output is resumed.

[0022] In the preset process steps, the second mass flow controller is controlled to maintain gas output before the pulse output of the second reaction fluid is completed, and to stop gas output after the pulse output of the second reaction fluid is completed, until the pulse output of the first reaction fluid is completed and gas output resumes.

[0023] In the second aspect of the embodiment, in the preset process steps, the first sub-branch connected to the first output main line and the second sub-branch connected to the second output main line are kept connected, and the other fluids in the first sub-branch and the second sub-branch are maintained at their respective preset stable flow rates.

[0024] A third aspect of this disclosure provides a semiconductor process apparatus, comprising: a reaction chamber; and a process feed system as described in any one of the first aspects.

[0025] As described above, this disclosure relates to the field of semiconductor processing technology, providing a process flow system, a process flow control method, and semiconductor process equipment. The process flow system includes a piping system and a control unit. The piping system includes a first piping unit and a second piping unit. The first piping unit includes a first branch, a first output main line, and a first pre-positioned piping. The second piping unit includes a second branch, a second output main line, and a second pre-positioned piping. The control unit controls the piping system to alternately execute a pulsed flow action of a first reactive fluid or a second reactive fluid into the reaction chamber, including: controlling the first branch or the second branch to be in a pre-flow state; controlling the first branch or the second branch to be in a pressurized state; controlling the pulsed output of the first reactive fluid or the second reactive fluid; and controlling the first branch or the second branch to return to the pre-flow state. Thus, by precisely controlling the two piping units to alternately execute the "pre-flow-pressurization-pulse output" flow action of the first reactive fluid or the second reactive fluid, a good pulsed nucleation effect is achieved. Attached Figure Description

[0026] Figure 1 shows a schematic diagram of the piping system in the process inlet system according to an embodiment of the present disclosure.

[0027] Figure 2 shows a schematic diagram of the piping system in the process inlet system according to another embodiment of this disclosure.

[0028] Figure 3 shows a schematic diagram of the communication connection structure between the control unit and the piping system in a process inlet system according to an embodiment of this disclosure.

[0029] Figure 4 shows a timing diagram of the control unit executing preset process steps in one embodiment of the present disclosure.

[0030] Figure 5 shows a timing diagram of the control unit executing preset process steps in another embodiment of this disclosure.

[0031] Figure 6 shows a schematic flowchart of a process flow control method in one embodiment of this disclosure.

[0032] Figure 7 shows a schematic diagram of the structure of a semiconductor process apparatus according to an embodiment of the present disclosure.

[0033] Figure 8 shows a flowchart of the semiconductor process flow used in the process flow system of one embodiment of this disclosure.

[0034] Figure 9 shows a schematic diagram of the process flow control device in one embodiment of this disclosure.

[0035] Figure 10 shows a schematic diagram of the structure of a computer device according to an embodiment of the present disclosure.

[0036] Explanation of reference numerals in the attached figures

[0037] 101. Piping system; 102. Control unit; 103. Reaction chamber; 104. Discharge pipe; 105. Platform; 106. Air inlet; 107. Spray head; 108. Exhaust valve; 110. First piping unit; 120. Second piping unit; 111. First branch; 112. First output main line; 113. First preset piping; 114. First secondary branch; 121. Second branch; 122. Second output main line; 123. Second preset piping; 124. Second secondary branch; 1111. First branch valve; 1112. First mass flow controller; 1113. First control valve; 1121. First main line valve; 1131. First preset valve; 141. First branch valve; 1142. Third mass flow controller; 1143. Third control valve; 1211. Second branch valve; 1212. Second mass flow controller; 1213. Second control valve; 1221. Second main valve; 1231. Second preset valve; 1241. Second branch valve; 1242. Fourth mass flow controller; 1243. Fourth control valve; 900. Process inlet control device; 901. Process execution module; 911. First action execution module; 912. Second action execution module; 1000. Computer device; 1001. Bus; 1002. Processor; 1003. Memory; 1004. Communicator. Detailed Implementation

[0038] The following specific examples illustrate the implementation of this disclosure. Those skilled in the art can easily understand other advantages and effects of this disclosure from the information disclosed herein. This disclosure can also be implemented or applied through other different specific embodiments, and various details in this disclosure can be modified or changed according to different viewpoints and application modules without departing from the spirit of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be combined with each other.

[0039] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this disclosure pertains can readily implement it. This disclosure may be embodied in many different forms and is not limited to the embodiments described herein.

[0040] In this disclosure, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic represented in connection with that embodiment or example is included in at least one embodiment or example of this disclosure. Furthermore, the specific features, structures, materials, or characteristics represented may be combined in any suitable manner in any one or at least one embodiment or example. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples represented in this disclosure, as well as the features of those different embodiments or examples.

[0041] Furthermore, the terms "first" and "second" are used for illustrative purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature, as stated in this disclosure.

[0042] For the purpose of clarity, devices unrelated to the description are omitted, and the same or similar components throughout the specification are given the same reference numerals.

[0043] Throughout this specification, when it is said that a device is "connected" to another device, this includes not only "direct connection" but also "indirect connection" by placing other components in between. Furthermore, when it is said that a device "comprises" a certain constituent element, unless otherwise stated otherwise, this does not exclude other constituent elements, but rather implies that other constituent elements may be included.

[0044] Although the terms first, second, etc., are used in some examples herein to refer to various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, first interface and second interface, etc., are used. Furthermore, as used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context indicates otherwise. It should be further understood that the terms “comprising” or “including” indicate the presence of the stated feature, step, operation, element, module, item, or kind, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, modules, items, or kinds. Thus, “A, B, or C” means “any one of: A; B; C.” Exceptions to this definition occur only when the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0045] The technical terms used herein are for reference only to specific embodiments and are not intended to limit the scope of this disclosure. The singular form used herein includes the plural form unless the statement explicitly indicates otherwise. The word "comprising" as used in this specification means to specify a particular characteristic, region, integer, step, operation, element, and / or component, and does not exclude the presence or addition of other characteristics, regions, integers, steps, operations, elements, and / or components.

[0046] Although not explicitly defined, all terms, including technical and scientific terms used herein, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries shall be further interpreted as having a meaning consistent with the relevant technical literature and the message of the present disclosure, and shall not be over-interpreted as having an ideal or overly formulaic meaning unless otherwise defined.

[0047] In view of the problems in the related technologies, this disclosure provides a process inlet system, which solves the problems in the related technologies through the structural layout of the pipeline system and the corresponding air intake control.

[0048] Figure 1 shows a schematic diagram of the piping system of the process inlet system in an embodiment of this disclosure.

[0049] Figure 1 shows that the piping system 101 includes a first piping unit 110 and a second piping unit 120.

[0050] The first piping unit 110 includes a first branch 111, a first output trunk 112 connected to the output end of the first branch 111, and a first pre-installed piping 113. The input end of the first branch 111 is supplied with a first reaction fluid. The output end of the first branch 111 is connected to one end of the first output trunk 112. The other end of the first output trunk 112 is connected to the inlet of the reaction chamber 103 of the process equipment. As an example, the process equipment can be a semiconductor process equipment, such as a plasma processing device, whose reaction chamber 103 can be used to ionize the input reaction fluid into plasma for semiconductor surface reaction processing, such as deposition and etching. From the input end to the output end, the first branch 111 is sequentially equipped with a first mass flow controller 1112 and a first branch valve 1111. The first mass flow controller 1112 controls the flow rate of the first reaction fluid in the first branch 111, and the first branch valve 1111 is used to open or close the first branch 111 to the first output trunk 112. Optionally, the first branch 111 may also be equipped with a first control valve 1113 located upstream of the first mass flow controller 1112. The opening degree of the first control valve 1113 determines the flow rate of the first reaction fluid supplied from the fluid source of the first reaction fluid to the first mass flow controller 1112. The input end of the first preset pipeline 113 is connected between the first mass flow controller 1112 and the first branch valve 1111, and the other end can be connected to the discharge pipeline 104 (such as connecting to a vacuum pump). The first preset pipeline 113 is provided with a first preset valve 1131 for controlling the conduction, disconnection, and opening degree of the first preset pipeline 113.

[0051] The second piping unit 120 includes a second branch 121, a second output main 122 connected to the output end of the second branch 121, and a second pre-installed piping 123. The input end of the second branch 121 is supplied with a second reaction fluid, and the first reaction fluid and the second reaction fluid are alternately and pulse-wise introduced into the reaction chamber 103 and react within the reaction chamber 103. The output end of the second branch 121 is connected to one end of the second output main 122. The other end of the second output main 122 is connected to the inlet of the reaction chamber 103 of the process equipment. From the input end to the output end, the second branch 121 is sequentially equipped with a second mass flow controller 1212 and a second branch valve 1211. The second mass flow controller 1212 controls the flow rate of the second reaction fluid in the second branch 121, and the second branch valve 1211 is used to open or close the second branch 121 to the second output main 122. Optionally, the second branch 121 may also be equipped with a second control valve 1213 located upstream of the second mass flow controller 1212. The opening degree of the second control valve 1213 determines the flow rate of the second reaction fluid supplied from the fluid source of the second reaction fluid to the second mass flow controller 1212. The input end of the second preset pipeline 123 is connected between the second mass flow controller 1212 and the second branch valve 1211, and the other end can be connected to the discharge pipeline 104, etc. The second preset pipeline 123 is provided with a second preset valve 1231 for controlling the conduction, disconnection, and opening degree of the second preset pipeline 123. In some embodiments, the output ends of the first preset pipeline 113 and the second preset pipeline 123 can be connected to the same discharge pipeline 104, for example, both can be connected to the discharge pipeline 104 of the reaction chamber 103 for discharging the reaction products.

[0052] In some embodiments, a first trunk valve 1121 for switching on and off may be provided in the first output trunk 112, and a second trunk valve 1221 for switching on and off may be provided in the second output trunk 122. As an example, the first trunk valve 1121 and the second trunk valve 1221 may be in an open state during the process steps, and the on / off state of their respective branches may be controlled by valves in the connected branches.

[0053] In some embodiments, the first preset pipeline 113 is used to set different states of the first branch 111, such as a pressurized state to prepare for the pulse output of the first reactive fluid, and a pre-flow state with a preset pressure before the pressurized state and after the pulse output. Specifically, when the first control valve 1113 in the first branch 111 is turned on to continuously supply the first reactive fluid, the first preset valve 1131 is opened to turn on the first preset pipeline 113, while the first branch valve 1111 is closed. This will cause the first reactive fluid continuously supplied in the first branch 111 to be output to the output end. After maintaining this for a certain period of time, the pressure in the first branch 111 will tend to stabilize and reach a stable preset pressure. Then, when the first preset valve 1131 is closed, the first reactive fluid in the first branch 111 increases but cannot be discharged, and is in a pressurized state of "holding air". Subsequently, the first branch valve 1111 is opened and then closed within one pulse duration, while the first main line remains open (e.g., the first main line valve 1121 is open), forming a pulse output of the first reactive fluid into the reaction chamber 103. After the pulse output is completed, the first branch valve 1111 closes first, and the first preset valve 1131 opens subsequently (if the first preset valve 1131 opens first, it will cause backflow due to the reaction chamber 103 being connected to the drain line via the first preset line 113), restoring the preflow state. Optionally, the first branch 111 can be purged with purge gas at this time. It should be noted that since the pressure in the drain line 104 may be lower than that in the reaction chamber 103, the first branch valve and the first preset valve 1131 will be interlocked in opposite open and closed states to avoid the adverse result of backflow of fluid from the reaction chamber 103 through the open first branch 111 to the open first preset line 113 and the drain line 104.

[0054] Since the pressurization state starts from the preset pressure, the initial pressure remains stable at the beginning of pressurization. Therefore, the pressure reached during pressurization is controlled solely by the pressurization time and the flow rate of the first reactant fluid. Because the pressurization time and the flow rate of the first reactant fluid are controllable, the pressure reached during pressurization is also controllable. This allows for a stable and consistent pulse output of the first reactant fluid in each execution. Conversely, without the first preset pipeline 113, it is difficult to ensure the stability of the pressure at the start and at the end of each pressurization, resulting in significant differences in pulse output between different executions and affecting process quality. Furthermore, without the first preset pipeline 113, there is no pre-flow state before directly entering the pressurization state. The first mass flow controller 1112 (MFC) can determine the output flow rate based on the pressure difference between the input and output terminals. If the MFC remains in a pressurization state for an extended period before pulse output, the pressure difference across the MFC will disappear, resulting in no first reactant fluid flowing out of the MFC output terminal. This leads to unstable output or insufficient output during pulse output due to the lack of flow from the MFC. Therefore, by setting the first preset pipeline 113, the stability of the pulse output of the first reaction fluid can be effectively guaranteed.

[0055] Understandably, when the flow rate is stable under pressurization controlled by the first mass flow controller 1112, the amount of air output by the pulse is determined by the duration of the "holding breath" pulse. As an example, the pulse duration can be between a few tenths of a second and several seconds, such as between 0.1s and 2s. Selecting an appropriate pulse duration can achieve the desired pulse output.

[0056] In some embodiments, the second preset pipeline 123 is used to set different states of the second branch 121, such as a pressurized state to prepare for the pulse output of the second reactive fluid, and a pre-flow state with a preset pressure before the pressurized state and after the pulse output. Specifically, when the second control valve 1213 in the second branch 121 is turned on to continuously supply the second reactive fluid, the second preset valve 1231 is opened to turn on the second preset pipeline 123, while the second branch valve 1211 is closed. This will cause the second reactive fluid continuously supplied in the second branch 121 to be output to the output end. After maintaining this for a certain period of time, the pressure in the second branch 121 will tend to stabilize and reach a stable preset pressure. Then, when the second preset valve 1231 is closed, the second reactive fluid in the second branch 121 increases but cannot be discharged, and is in a "stressed" pressurized state. Subsequently, the second branch valve 1211 is opened and then closed within one pulse duration, while the second main line remains open (e.g., the second main line valve 1221 is open), forming a pulse output of the second reactive fluid into the reaction chamber 103. After the pulse output is completed, the second branch valve 1211 closes first, and the second preset valve 1231 opens subsequently (if the second preset valve 1231 opens first, it will cause backflow due to the reaction chamber 103 being connected to the drain line via the second preset line 123), restoring the preflow state. Optionally, the second branch line 121 can be purged with purge gas at this time. It should be noted that since the pressure in the drain line 104 may be lower than that in the reaction chamber 103, the second branch valve and the second preset valve 1231 will be interlocked in opposite open and closed states to avoid the adverse result of backflow of fluid from the reaction chamber 103 through the open second branch line 121 to the open second preset line 123 and the drain line 104.

[0057] Since the pressurization state starts from the preset pressure, maintaining a stable initial pressure, the pressure reached during pressurization is controlled solely by the pressurization time and the flow rate of the second reactant fluid. Because the pressurization time and the flow rate of the second reactant fluid are controllable, the pressure reached is also controllable. This allows for consistent and stable pulse output of the second reactant fluid in each execution. Conversely, without the second preset pipeline 123, it is difficult to ensure the stability of the pressure at the start of pressurization and the pressure reached, resulting in significant differences in pulse output between different executions, affecting process quality. Furthermore, without the second preset pipeline 123, there is no pre-flow state before directly entering the pressurization state. The second mass flow controller 1212 (MFC) can determine the output flow rate based on the pressure difference between the input and output terminals. Prolonged pressurization before pulse output can cause the pressure difference across the MFC to disappear, resulting in no second reactant fluid flowing out of the MFC output terminal. This leads to unstable output or insufficient output during pulse output due to the lack of flow from the MFC. Therefore, by setting the second preset pipeline 123, the stability of the pulse output of the second reaction fluid can be effectively guaranteed.

[0058] Understandably, when the flow rate is stable during pressurization controlled by the second mass flow controller 1212, the amount of air output by the pulse is determined by the duration of the "holding" pulse. As an example, the pulse duration can be between a few tenths of a second and several seconds, such as between 0.1s and 2s. Selecting an appropriate pulse duration can achieve the desired pulse output.

[0059] In specific process flows, in addition to the first and second reaction fluids, other fluids may be added. These include carrier fluids for the first and second reaction fluids, and fluids added for other reactions during the deposition or etching process. For example, the term "fluid" can be exemplified as a gas. Taking pulsed nucleation tungsten as an example, the second reaction fluid includes tungsten fluoride gas as a precursor, such as tungsten hexafluoride (WF6). The first reaction fluid includes a first reducing gas for reducing tungsten, such as silane (SiH4), or silane can be replaced by other hydrogen-containing reducing agents, such as diborane (B2H6). The reaction formula between them is WF6 + SiH4 → W + SiF 4 + HF, thereby reducing and forming a tungsten nucleation layer. In some embodiments, other fluids that may be added may include a second reducing gas for reducing tungsten, such as hydrogen (H2), WF6 + H2 → W + HF, which can be used to form bulk tungsten deposits after the tungsten nucleation layer. Additionally, in some embodiments, other fluids may include a carrier gas for the first reducing gas and a carrier gas for the second reaction fluid (i.e., tungsten hexafluoride). The carrier gas may be an inert gas, such as argon (Ar). In some embodiments, the other fluids may also contain a cleaning gas, such as NF3, for removing excess tungsten deposits within the reaction chamber 103.

[0060] To transport these auxiliary gases, referring to Figure 2, the first piping unit 110 further includes at least one first sub-branch 114, the output of which converges with the output of the first branch 111 and is connected to the first output main line 112. The second piping unit 120 includes at least one second sub-branch 124, the output of which converges with the output of the second branch 121 and is connected to the second output main line 122. Each of the first sub-branch 114 and the second sub-branch 124 is provided with a first sub-branch valve 1141 and a second sub-branch valve 1241, respectively. Furthermore, to avoid unwanted reactions between other fluids belonging to the same piping unit's sub-branch, other fluids that react unwantedly with the second reacting fluid but do not react with the first reacting fluid can be transported through the first sub-branch 114, and other fluids that react unwantedly with the first reacting fluid but do not react with the second reacting fluid can be transported through the second sub-branch 124. For example, the first reacting fluid is SiH4, the second reacting fluid is WF6, and other fluids include H2 and NF3. If WF6 and H2 are in parallel branches, an undesirable in-line reaction may occur between WF6 and H2 when both branches are conducting. Similarly, if SiH4 and NF3 are in parallel branches, an undesirable in-line reaction may occur between SiH4 and NF3 when both branches are conducting. Therefore, when the first reacting fluid is transported through the first branch 111, H2, which does not react with it (containing the same H element), can be transported in a first sub-branch 114. And when the second reacting fluid is transported through the second branch 121, NF3, which does not react with it (containing the same F element), can be transported in a second sub-branch 124.

[0061] As shown in Figure 2, other fluids may also include carrier fluids for the first and second reacting fluids. The carrier fluid for the first reacting fluid can be transported via a first secondary branch 114, and the carrier fluid for the second reacting fluid can be transported via a second secondary branch 124. The carrier fluid may include an inert gas, such as argon, as a carrier gas.

[0062] In some embodiments, each first sub-branch 114 may be sequentially provided with a third mass flow controller 1142 and a first sub-branch valve 1141 from the input end to the output end. Optionally, a third control valve 1143 may also be provided upstream of the third mass flow controller 1142. Each second sub-branch 124 may be sequentially provided with a fourth mass flow controller 1242 and a second sub-branch valve 1241 from the input end to the output end. Optionally, a fourth control valve 1243 may also be provided upstream of the fourth mass flow controller 1242. During the process steps, the first sub-branch 114 and the second sub-branch 124 may be opened or closed according to process requirements.

[0063] The process feed system also includes a control unit 102, which is communicatively connected to each controllable pipeline component (such as valves, mass flow controllers, etc.) in the pipeline system 101 to perform control according to process requirements. The control unit 102 may contain one or more controllers that are communicatively connected.

[0064] Figure 3 shows a schematic diagram of the communication connection structure between the control unit 102 and the piping system 101 in a process feed system according to an embodiment of this disclosure.

[0065] Figure 3 shows that the control unit 102 is communicatively connected to and controls the first control valve 1113, the first branch valve 1111, the first mass flow controller 1112, the first preset valve 1131, the third control valve 1143, the third mass flow controller 1142, the first auxiliary branch valve 1141, and the first main valve 1121; and is communicatively connected to and controls the second control valve 1213, the second branch valve 1211, the second mass flow controller 1212, the second preset valve 1231, the fourth control valve 1243, the fourth mass flow controller 1242, the second auxiliary branch valve 1241, and the second main valve 1221.

[0066] The control unit 102 can control the above-mentioned pipeline components to change state according to the required timing sequence in order to cyclically execute preset process steps.

[0067] In the preset process steps, the first pipeline unit 110 and the second pipeline unit 120 alternately perform a pulsed flow action of the first reaction fluid or the second reaction fluid into the reaction chamber 103.

[0068] The first inlet flow action of the first pipeline unit 110 includes: controlling the first preset valve 1131 to open and the first branch valve 1111 to close so that the first branch 111 is in a pre-flow state; controlling the first preset valve 1131 and the first branch valve 1111 to close so that the first branch 111 is in a pressurized state; keeping the first output main line 112 open and controlling the first branch valve 1111 to open to perform the pulse output of the first reactive fluid; and sequentially controlling the first branch valve 1111 to close and the first preset pipeline 113 to open for purging and to prepare for the next pulse output.

[0069] The second inlet operation of the second pipeline unit 120 includes: controlling the second preset valve 1231 to open and the second branch valve 1211 to close so that the second branch 121 is in a pre-flow state; controlling the second preset valve 1231 and the second branch valve 1211 to close so that the second branch 121 is in a pressurized state; keeping the second output main line 122 open and controlling the second branch valve 1211 to open to perform the pulse output of the second reaction fluid; and sequentially controlling the closing of the second branch valve 1211 and the opening of the second preset pipeline 123 to purge and prepare for the next pulse output.

[0070] Since the preset process steps are executed cyclically, and the two flow-in actions in each preset process step are executed alternately, the cyclical alternation of the first flow-in action and the second flow-in action is completed. That is, the execution process is "preset process step (first flow-in action → second flow-in action) → preset process step (first flow-in action → second flow-in action)...". It can be understood that the number of cycles can be determined according to actual needs.

[0071] Optionally, after completing one cycle, the flow rate in each pipeline can be emptied and reset to zero, in preparation for the next cycle.

[0072] Figure 4 shows a timing diagram of the control unit 102 executing preset process steps in one embodiment of the present disclosure.

[0073] This timing diagram exemplifies the execution process of a preset process step that is executed cyclically. In this embodiment, the preset process step is implemented as a pulse nucleation tungsten process step.

[0074] The preset process steps consist of multiple stages in chronological order: initial pre-flow stage → SiH4 charging stage → SiH4 pulse stage → SiH4 purging stage → WF6 charging stage → WF6 pulse stage → WF6 purging stage, which are executed cyclically. After one cycle, the pipeline flow can be reset to zero to prepare for the initial pre-flow stage of the next cycle.

[0075] In the preset process steps of this embodiment, the first main valve 1121 and the second main valve 1221 can remain open. Furthermore, each first branch valve 1141 is open, and each mass flow controller can maintain a stable set flow rate before the pipeline flow is zeroed. It should be noted that the set flow rate is only the expected flow rate set by the MFC, and does not represent the actual flow rate. The actual flow rate of the mass flow controller is obtained based on the sensing signal of its sensor, i.e., "feedback". Thus, the set flow rate of SiH4 is maintained at X sccm, the set flow rate of H2 at A sccm, the set flow rate of Ar carrier gas for SiH4 at B sccm, the set flow rate of WH6 at Y sccm, and the set flow rate of Ar carrier gas for WH6 at C sccm.

[0076] During the initial pre-flow stage, the first branch valve 1111 is closed and the first preset valve 1131 is open; the second branch valve 1211 is closed and the second preset valve 1231 is open, so that the first branch 111 and the second branch 121 reach the pre-flow state.

[0077] During the SiH4 inflation stage, the first branch valve 1111 is closed and the first preset valve 1131 is closed; the second branch valve 1211 is closed and the second preset valve 1231 is opened, thus putting the first branch 111 into a pressurized state.

[0078] During the SiH4 pulse phase, the first branch valve 1111 is opened to maintain the pulse duration, and the first preset valve 1131 is closed; the second branch valve 1211 is closed, and the second preset valve 1231 is opened; so that the first branch 111 pulse outputs the first reaction fluid to the reaction chamber 103;

[0079] During the SiH4 purging stage, the first branch valve 1111 is closed first, and the first preset valve 1131 is opened later; the second branch valve 1211 is closed, and the second preset valve 1231 is opened; the first branch 111 is purged.

[0080] During the WF6 inflation stage, the first branch valve 1111 is closed and the first preset valve 1131 is open; the second branch valve 1211 is closed and the second preset valve 1231 is closed, thus putting the second branch 121 into a pressurized state.

[0081] During the WF6 pulse phase, the first branch valve 1111 is closed and the first preset valve 1131 is open; the second branch valve 1211 is open to maintain the pulse duration, and the second preset valve 1231 is closed; so that the second branch 121 pulse outputs the second reaction fluid to the reaction chamber 103;

[0082] During the WF6 purging stage, the first branch valve 1111 is closed and the first preset valve 1131 is opened; the second branch valve 1211 is closed and the second preset valve 1231 is opened; the second branch 121 is purged.

[0083] Afterwards, a flow clearing phase may be included after each cycle, during which the flow of each mass controller (including the first mass flow controller 1112, the second mass flow controller 1212, the third mass flow controller 1142, and the fourth mass flow controller 1242) is reduced to zero, that is, the SiH4 set flow rate is 0 sccm, the H2 set flow rate is 0 sccm, the Ar carrier gas set flow rate of SiH4 is 0 sccm, the WH6 set flow rate is 0 sccm, and the Ar carrier gas set flow rate of WH6 is 0 sccm; the first branch valve 1111 is closed, and the first preset valve 1131 is opened; the second branch valve 1211 is closed, and the second preset valve 1231 is opened.

[0084] Figure 5 shows a timing diagram of the control unit 102 executing preset process steps in another embodiment of this disclosure.

[0085] Compared to the embodiment in Figure 4, the preset process steps in this embodiment control the flow rates of the first mass flow controller 1112 and the second mass flow controller 1212. During the inflow of the first reactant fluid, the flow rate of the second reactant fluid can be kept zero for certain stages; and during the inflow of the second reactant fluid, the flow rate of the first reactant fluid can be kept zero for certain stages. Therefore, savings in the consumption of the first and second reactant fluids can be achieved in each preset process step. The accumulated savings over multiple cycles of these preset process steps are substantial, effectively optimizing process costs.

[0086] Similar to the previous embodiment, the preset process steps include multiple stages in chronological order: initial pre-flow stage → SiH4 charging stage → SiH4 pulse stage → SiH4 purging stage → WF6 charging stage → WF6 pulse stage → WF6 purging stage, which are executed cyclically. After one cycle, the pipeline flow can be reset to zero to prepare for the initial pre-flow stage of the next cycle.

[0087] The principle of flow control for the first and second mass flow controllers 1212 to save on the consumption of the first and second reactant fluids is explained in detail. To save on the consumption of the first reactant fluid, the first mass flow controller 1112 maintains airflow until the pulse output of the first reactant fluid is completed, and stops airflow after the pulse output of the first reactant fluid is completed, resuming airflow only after the pulse output of the second reactant fluid is completed. To save on the consumption of the second reactant fluid, the second mass flow controller 1212 is configured to have the opposite airflow state to the first mass flow controller. That is, the second mass flow controller 1212 maintains airflow until the pulse output of the second reactant fluid is completed, and stops airflow after the pulse output of the second reactant fluid is completed, resuming airflow only after the pulse output of the first reactant fluid is completed. Figure 4 exemplarily shows the set flow rates of the first reactant fluid (SiH4 in the example) and the second reactant fluid (WF6 in the example) at different stages.

[0088] In the preset process steps of this embodiment, the first main valve 1121 and the second main valve 1221 can remain open. Furthermore, each of the first branch valves 1141 is open, and before the pipeline flow is zeroed, all mass flow controllers except the first mass flow controller 1112 and the second mass flow controller 1212 can maintain a stable flow output. Thus, the set flow rate of H2 is maintained at A sccm, the set flow rate of Ar carrier gas for SiH4 is B sccm, and the set flow rate of Ar carrier gas for WH6 is C sccm.

[0089] During the initial pre-flow stage, the first branch valve 1111 is closed and the first preset valve 1131 is open; the second branch valve 1211 is closed and the second preset valve 1231 is open, bringing the first branch 111 and the second branch 121 to the pre-flow state. During this stage, the SiH4 flow rate is X sccm and the WF6 flow rate is 0 sccm.

[0090] During the SiH4 inflation stage, the first branch valve 1111 is closed and the first preset valve 1131 is closed; the second branch valve 1211 is closed and the second preset valve 1231 is open, thus putting the first branch 111 under pressure. During this stage, the SiH4 flow rate is maintained at X sccm and the WF6 flow rate is maintained at 0 sccm.

[0091] During the SiH4 pulse phase, the first branch valve 1111 is open to maintain the pulse duration, and the first preset valve 1131 is closed; the second branch valve 1211 is closed, and the second preset valve 1231 is open; so that the first branch 111 pulse outputs the first reaction fluid to the reaction chamber 103; during this phase, the SiH4 flow rate is maintained at X sccm, and the WF6 flow rate is maintained at 0 sccm.

[0092] During the SiH4 purging stage, the first branch valve 1111 closes first, and the first preset valve 1131 opens subsequently; the second branch valve 1211 closes, and the second preset valve 1231 opens; the first branch 111 is then purged. During this stage, the SiH4 flow rate changes by 0 sccm, and the WF6 flow rate changes by Y sccm, in preparation for subsequent WF6 charging.

[0093] During the WF6 inflation stage, the first branch valve 1111 is closed and the first preset valve 1131 is open; the second branch valve 1211 is closed and the second preset valve 1231 is closed, thus putting the second branch 121 into a pressurized state; during this stage, the SiH4 flow rate is maintained at 0 sccm and the WF6 flow rate is maintained at Y sccm.

[0094] During the WF6 pulse phase, the first branch valve 1111 is closed and the first preset valve 1131 is open; the second branch valve 1211 is open to maintain the pulse duration, and the second preset valve 1231 is closed; this causes the second branch 121 to pulse-output the second reaction fluid to the reaction chamber 103; during this phase, the SiH4 flow rate is maintained at 0 sccm, and the WF6 flow rate is maintained at Y sccm.

[0095] During the WF6 purging stage, the first branch valve 1111 is closed and the first preset valve 1131 is open; the second branch valve 1211 is closed and the second preset valve 1231 is open; the second branch 121 is purged. During this stage, the SiH4 flow rate and the WF6 flow rate are both maintained at 0 sccm.

[0096] Afterwards, a flow clearing phase may be included after each cycle, during which the flow of each quality controller (including the first quality flow controller 1112, the second quality flow controller 1212, the third quality flow controller 1142, and the fourth quality flow controller 1242) is reduced to zero; the first branch valve 1111 is closed and the first preset valve 1131 is opened; the second branch valve 1211 is closed and the second preset valve 1231 is opened.

[0097] As can be seen from the embodiment in Figure 5, in a preset process step of a cycle, SiH4 and WF6 can be exempted from flow consumption in multiple stages, thereby effectively reducing the consumption of SiH4 and WF6 and saving costs.

[0098] Figure 6 shows a flowchart of a process inflow control method according to an embodiment of this disclosure. The process inflow control method is applied to the process inflow system in this embodiment and can be executed by the control unit 102 in the process inflow system. It should be noted that the implementation and principle of the method in this embodiment can be referred to previous embodiments of the process inflow system, and will not be repeated here.

[0099] In Figure 6, the process flow control method includes: a preset process step that is executed cyclically, the preset process step including:

[0100] Step S601: Perform the inflow action of the first reactive fluid, including: controlling the first preset valve 1131 to open and the first branch valve 1111 to close so that the first branch 111 is in a preflow state; controlling the first preset valve 1131 and the first branch valve 1111 to close so that the first branch 111 is in a pressurized state; keeping the first output main line 112 open, controlling the first branch valve 1111 to open to perform the pulse output of the first reactive fluid; sequentially controlling the closing of the first branch valve 1111 and the opening of the first preset pipeline 113 for purging and preparation for the next pulse output;

[0101] Step S602: Perform the inflow action of the second reactive fluid, including: controlling the second preset valve 1231 to open and the second branch valve 1211 to close so that the second branch 121 is in a preflow state; controlling the second preset valve 1231 and the second branch valve 1211 to close so that the second branch 121 is in a pressurized state; keeping the second output main line 122 open, controlling the second branch valve 1211 to open to perform the pulse output of the second reactive fluid; sequentially controlling the closing of the second branch valve 1211 and the opening of the second preset pipeline 123 for purging and preparation for the next pulse output.

[0102] The process may include a flow clearing phase after step S602, followed by a cycle of S601 and S602.

[0103] In some embodiments, the process flow control method further includes: in a preset process step, controlling the first mass flow controller 1112 to maintain gas output before the pulse output of the first reactive fluid is completed, and stopping gas output after the pulse output of the first reactive fluid is completed, until the pulse output of the second reactive fluid is completed and then resuming gas output. In a preset process step, controlling the second mass flow controller 1212 to maintain gas output before the pulse output of the second reactive fluid is completed, and stopping gas output after the pulse output of the second reactive fluid is completed, until the pulse output of the first reactive fluid is completed and then resuming gas output. Referring to the embodiment in FIG5, by controlling the output flow of the first mass flow controller 1112 and the second mass flow controller 1212 through the above steps, it is possible to ensure that the first and second reactive fluids do not need to have flow output at certain stages of their respective flow-in actions, thereby effectively reducing the consumption of the first and second reactive fluids and reducing costs.

[0104] In the second aspect of the embodiment, during the preset process steps, the first sub-branch 114 connecting the first output main line 112 and the second sub-branch 124 connecting the second output main line 122 are kept conductive, and other fluids in the first sub-branch 114 and the second sub-branch 124 are maintained at their respective preset stable flow rates. Referring to the embodiments in Figures 4 and 5, other fluids in the first sub-branch 114 and the second sub-branch 124, such as H2, NF3, and carrier gas Ar, can be kept stably output by the third mass flow controller 1142 and the fourth mass flow controller 1242 in their respective sub-branchs.

[0105] Figure 7 shows a schematic diagram of the structure of a semiconductor process apparatus according to an embodiment of the present disclosure.

[0106] The semiconductor process equipment includes a reaction chamber 103 and the process flow system of any of the previous embodiments.

[0107] Specifically, a stage 105 for loading wafers, such as a hot stage or electrostatic chuck, can be provided at the bottom of the reaction chamber 103. An air inlet 106 is formed at the top (or other location) of the reaction chamber 103 for air intake. Optionally, a spray head 107 facing the stage can be connected to the air inlet for spraying air intake. An exhaust port can be formed at the bottom of the reaction chamber 103 outside the stage, and the pipe is connected to an exhaust pipe 104. The exhaust pipe 104 can be connected to a vacuum pump for extracting the reaction products. An exhaust valve 108 can also be provided in the pipe from the exhaust port of the reaction chamber 103 to the exhaust pipe 104. It should be noted that, for structural simplification, some components are omitted, such as the plasma ionization components for gas plasmaization within the plasma reaction chamber 103, such as an induction coil for applying radio frequency voltage.

[0108] The process flow system includes a piping system 101, wherein a first branch 111 and a second branch 121 in a first piping unit 110 of the piping system 101 can be connected to an air inlet 106 of the reaction chamber 103. In some embodiments, the air inlet may be one or more air inlets. In other embodiments, the air inlet 106 may include a mixer for initially mixing the incoming first and second reaction fluids before introducing them into the reaction chamber 103 to accelerate the reaction. The process flow system includes a control unit 102, which is communicatively connected to each piping element in the piping system 101 to execute the method flow shown in FIG. 6 and can realize, for example, the timing sequence of the preset process steps shown in FIG. 4 and FIG. 5.

[0109] In this embodiment, other fluids may be exemplary, including a second reducing fluid for reducing tungsten, such as hydrogen (H2), transported in a first sub-branch 114 (WF6 + H2 → W + HF), which can be used to form bulk tungsten deposits after the tungsten nucleation layer. Additionally, in some embodiments, other fluids may also include a carrier fluid for the first reducing fluid, transported in another first sub-branch 114, and a carrier fluid for the deposition reaction fluid (i.e., tungsten hexafluoride), transported in a second sub-branch 124. For example, the carrier fluid may be an inert gas, such as argon (Ar). In some embodiments, the other fluids may also include a cleaning fluid, such as NF3 gas, transported in another second sub-branch 124, which can be used to react with tungsten to remove excess tungsten.

[0110] Figure 8 illustrates a flowchart of the semiconductor process flow used in a process flow system according to an embodiment of this disclosure. As an example, the semiconductor process flow in this embodiment may be tungsten filling of contact holes.

[0111] The process shown in Figure 8 includes:

[0112] Step S801: Deposit a barrier or adhesive layer.

[0113] In some optional examples, in step S802, a Ti- or TiN-containing adhesive or barrier layer can be grown on the pretreated surface by PVD or CVD methods to prevent tungsten peeling and also to prevent WF6 from eroding the underlying silicon.

[0114] Step S802: Tungsten deposition.

[0115] Specifically, the process can begin with heating and soaking with SiH4 (Soak), which decomposes to form Si and H2. Then, tungsten nucleation occurs, using the timing sequence shown in previous examples (Figures 4 and 5), with alternating pulsed input of SiH4 and WF6 to form a tungsten nucleation layer. Further, a bulk tungsten deposition is formed through the reaction of H2 and WF6. As an example, the deposition method used is low-pressure chemical vapor deposition (LP-CVD).

[0116] Optionally, excess tungsten can be removed in subsequent steps using physical or chemical processes. Alternatively, the wafer surface can be pretreated before the deposition process.

[0117] In addition, let me briefly introduce the process principle of CVD thin film deposition in reaction chamber 103. First, the reaction gas enters reaction chamber 103 through spray head 107 and passes through the pre-convection layer. Then, the thin film precursor reacts, and gas molecules diffuse and are adsorbed onto the wafer surface substrate. The adsorbed precursor diffuses into the substrate of the film growth region. A chemical reaction occurs on the high-temperature surface, leading to thin film deposition and the generation of by-products. The reaction by-products remain on the wafer surface. The gaseous by-products are desorbed, detached from the wafer surface, and diffuse into the boundary layer. The by-products are then vacuum-extracted from reaction chamber 103.

[0118] Figure 9 shows a schematic diagram of the process inflow control device in one embodiment of this disclosure. It should be noted that the principle and technical implementation of the process inflow control device can refer to the process inflow control method in previous embodiments, therefore, it will not be repeated in this embodiment.

[0119] In Figure 9, the process inflow control device 900 includes:

[0120] The process execution module 901 is used to cyclically execute preset process steps, including:

[0121] The first action execution module 911 is used to execute the inflow action of the first reactive fluid, including: controlling the first preset valve to open and the first branch valve to close so that the first branch is in a preflow state; controlling the first preset valve and the first branch valve to close so that the first branch is in a pressurized state; keeping the first output main line open and controlling the first branch valve to open to execute the pulse output of the first reactive fluid; and sequentially controlling the closing of the first branch valve and the opening of the first preset pipeline for purging and preparation for the next pulse output.

[0122] The second action execution module 912 executes the inflow action of the second reactive fluid, including: controlling the second preset valve to open and the second branch valve to close so that the second branch is in a preflow state; controlling the second preset valve and the second branch valve to close so that the second branch is in a pressurized state; keeping the second output main line open and controlling the second branch valve to open to execute the pulse output of the second reactive fluid; and sequentially controlling the closing of the second branch valve and the opening of the second preset pipeline for purging and preparation for the next pulse output.

[0123] It should be noted that the various functional modules in the embodiment of Figure 9 can be implemented, in whole or in part, by software, hardware, firmware, or any combination thereof. When implemented in software, they can be implemented, in whole or in part, in the form of a computer program or instruction product. A computer program or instruction product includes one or more computer programs or instructions. When a computer program or instruction is loaded and executed on a computer, it produces, in whole or in part, the flow or function according to this disclosure. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer program or instructions can be stored in a computer-readable storage medium or transferred from one computer-readable storage medium to another.

[0124] Furthermore, the device disclosed in the embodiment of Figure 9 can be implemented through other modular division methods. The device embodiments shown above are merely illustrative. For example, the module division is only a logical functional division, and in actual implementation, there may be other division methods. For example, at least one module or a module may be combined or dynamically integrated into another system, or some features may be ignored or not executed. Another point is that the shown or discussed mutual coupling, direct coupling, or communication connection may be through some interfaces, and the indirect coupling or communication connection between devices or modules may be electrical or other forms.

[0125] Furthermore, the functional modules and sub-modules in the embodiment of Figure 9 can be dynamically integrated within a single processing unit, or each module can exist physically independently, or two or more modules can be dynamically integrated within a single unit. These dynamic units can be implemented in hardware or as software functional modules. If these dynamic units are implemented as software functional modules and sold or used as independent products, they can also be stored in a computer-readable storage medium. This storage medium can be a read-only memory, a hard disk, or an optical disk, etc.

[0126] It should be specifically noted that the flowchart representations of the embodiments described above in this disclosure can be understood as representing a module, segment, or portion of code comprising one or more executable instructions configured to implement a specific logical function or process. Furthermore, the scope of the preferred embodiments of this disclosure includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order depending on the functions involved.

[0127] For example, the order of the steps in the method embodiments shown in Figure 6 may vary in specific scenarios and is not limited to the above representation.

[0128] Figure 10 shows a schematic diagram of the structure of a computer device according to an embodiment of the present disclosure.

[0129] The computer device 1000 can be used to implement the control unit. The computer device 1000 includes a bus 1001, a processor 1002, and a memory 1003. The processor 1002 and the memory 1003 can communicate via the bus 1001. The memory 1003 can store computer programs or instructions. The processor 1002 implements the method flow or function in the previous embodiments by running the computer programs or instructions in the memory 1003, as shown in Figure 6.

[0130] Bus 1001 can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. Buses can be categorized as address buses, data buses, control buses, etc. For ease of representation, although only one thick line is used in the diagram, this does not indicate that there is only one bus or one type of bus.

[0131] In some embodiments, the processor 1002 may be implemented as a central processing unit (CPU), a microprocessor unit (MCU), a system-on-chip (System-on-Chip), or a field-programmable array (FPGA). The memory 1003 may include volatile memory for temporary data storage during program execution, such as random access memory (RAM).

[0132] The memory 1003 may also include non-volatile memory for data storage, such as read-only memory (ROM), flash memory, hard disk drive (HDD), or solid-state disk (SSD).

[0133] In some embodiments, the computer device 1000 may further include a communicator 1004. The communicator 1004 is used for communication with external devices. In specific examples, the communicator 1004 may include a wired communication circuit module or a wireless communication circuit module, or at least one wired communication circuit module and at least one wireless communication circuit module. For example, the communicator 1004 may include one or more of, such as a wired network card, a USB module, a serial interface module, etc. The wireless communication protocols followed by the wireless communication module include one or more of the following: Nearfield communication (NFC) technology, Infrared (IR) technology, Global System for Mobile communications (GSM), General Packet Radio Service (GPRS), Code Division Multiple Access (CDMA), Wideband Code Division Multiple Access (WCDMA), Time-Division Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Bluetooth (BT), and Global Navigation Satellite System (GNSS).

[0134] This disclosure also provides a computer-readable storage medium storing a computer program or instructions that, when run, implement the method flow or function of any of the previous embodiments, such as Figure 6.

[0135] That is, the method steps in the above embodiments are implemented as software or computer code that can be stored in a recording medium (such as CD ROM, RAM, floppy disk, hard disk or magneto-optical disk), or implemented as computer code that is originally stored in a remote recording medium or a non-transitory machine-readable medium and will be stored in a local recording medium after being downloaded via a network, so that the method represented herein can be stored in such software processing on a recording medium using a general-purpose computer, a special processor or programmable or special hardware (such as ASIC or FPGA).

[0136] This disclosure may also provide a computer program product, comprising one or more computer programs or instructions, which, when run, perform all or part of the processes or functions described in this disclosure, as shown in Figure 6. The computer program product includes one or more computer programs or instructions.

[0137] Computer programs or instructions can be stored in a readable storage medium or transferred from one readable storage medium to another. For example, the computer program or instructions can be transferred from one website, computer, server, or data center to another website, computer, server, or data center via wired or wireless means. The readable storage medium can be any available medium capable of access, or a data storage device such as a server or data center that integrates one or more available media. The available medium can be a magnetic medium, such as a floppy disk, hard disk, or magnetic tape; an optical medium, such as a digital video optical disc; or a semiconductor medium, such as a solid-state drive. The computer-readable storage medium can be a volatile or non-volatile storage medium, or it can include both volatile and non-volatile types of storage media.

[0138] In summary, this disclosure relates to the field of semiconductor processing technology, providing a process flow system, a process flow control method, and semiconductor process equipment. The process flow system includes a piping system and a control unit. The piping system includes a first piping unit and a second piping unit. The first piping unit includes a first branch, a first output main line, and a first pre-positioned piping. The second piping unit includes a second branch, a second output main line, and a second pre-positioned piping. The control unit controls the piping system to alternately execute a pulsed flow action of a first reactive fluid or a second reactive fluid into the reaction chamber, including: controlling the first branch or the second branch to be in a pre-flow state; controlling the first branch or the second branch to be in a pressurized state; controlling the pulsed output of the first reactive fluid or the second reactive fluid; and controlling the first branch or the second branch to return to the pre-flow state. Thus, by precisely controlling the two piping units to alternately execute the "pre-flow-pressurization-pulse output" flow action of the first reactive fluid or the second reactive fluid, a good pulsed nucleation effect is achieved.

[0139] The above embodiments are merely illustrative of the principles and effects of this disclosure and are not intended to limit this disclosure. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this disclosure. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this disclosure should still be covered by the protection scope of this disclosure.

Claims

1. A process feed system, characterized in that, include: A piping system includes: a first piping unit and a second piping unit; the first piping unit includes a first branch, a first output trunk connected to the output end of the first branch, and a first pre-installed piping; the second piping unit includes a second branch, a second output trunk connected to the output end of the second branch, and a second pre-installed piping; the first and second output trunks are connected to the inlet of the reaction chamber; the input ends of the first and second branches are respectively supplied with a first reaction fluid and a second reaction fluid for the reaction; the first branch is provided with a first mass flow controller and a first branch valve sequentially from the input end to the output end; the second branch is provided with a second mass flow controller and a second branch valve sequentially from the input end to the output end; the input end of the first pre-installed piping is connected between the first mass flow controller and the first branch valve, and is provided with a first pre-installed valve; the input end of the second pre-installed piping is connected between the second mass flow controller and the second branch valve, and is provided with a second pre-installed valve; The control unit is used to control the pipeline system to cyclically execute preset process steps. In the preset process steps, the first pipeline unit and the second pipeline unit alternately perform a pulsed flow action of the first reaction fluid or the second reaction fluid into the reaction chamber, including: controlling the first preset valve or the second preset valve to open and the first branch valve or the second branch valve to close so that the first branch or the second branch is in a pre-flow state; controlling the first preset valve or the second preset valve and the first branch valve or the second branch valve to close so that the first branch or the second branch is in a pressurized state; keeping the first output main line or the second output main line open, and controlling the first branch valve or the second branch valve to open to execute the pulsed output of the first reaction fluid or the second reaction fluid; sequentially controlling the first branch valve or the second branch valve to close and the first preset pipeline or the second preset pipeline to open for purging and to prepare for the next pulse output.

2. The process feed system according to claim 1, characterized in that, Includes at least one of the following: a) The first mass flow controller maintains gas output until the pulse output of the first reactant fluid is completed, and stops gas output after the pulse output of the first reactant fluid is completed, until the pulse output of the second reactant fluid is completed and gas output resumes. b) The second mass flow controller is configured to have the opposite air output state to that of the first mass controller.

3. The process feed system according to claim 1, characterized in that, The first pipeline unit further includes: at least one first secondary branch, the output end of which is connected to the first output main line at the same point as the output end of the first branch; the second pipeline unit further includes: at least one second secondary branch, the output end of which is connected to the second output main line at the same point as the output end of the second branch; each of the first secondary branch and the second secondary branch is respectively provided with a first secondary branch valve and a second secondary branch valve.

4. The process feed system according to claim 3, characterized in that, The input terminals of at least one first sub-branch and at least one second sub-branch are used to input other fluids to be introduced into the reaction chamber; wherein, other fluids that will react undesirably with the second reaction fluid but do not react with the first reaction fluid are transported through the first sub-branch, and other fluids that will react undesirably with the first reaction fluid but do not react with the second reaction fluid are transported through the second sub-branch.

5. The process feed system according to claim 3, characterized in that, An input terminal of the first sub-branch is used to input the carrier fluid of the first reaction fluid; An input terminal of the second sub-branch is used to input the carrier fluid of the second reaction fluid.

6. The process feed system according to claim 3, characterized in that, Includes at least one of the following: The first sub-branch is equipped with a third mass flow controller located upstream of the valve in the first sub-branch; the second sub-branch is equipped with a fourth mass flow controller located upstream of the valve in the second sub-branch. During the flow inlet operation, each of the first and second branch valves is in the open state; The first output trunk line and the second output trunk line are respectively provided with a first main valve and a second main valve; wherein, during the flow inlet operation, the first main valve and the second main valve are in the open state.

7. The process feed system according to claim 1, characterized in that, The second reaction fluid includes tungsten fluoride gas as a precursor; the first reaction fluid includes a first reducing gas for reducing tungsten. Other fluids connected to the first branch in the first output trunk line along with the first branch include: a second reducing gas for reducing tungsten to form a deposit, and an inert gas as a carrier gas for the first reducing gas; other fluids connected to the second branch in the second output trunk line along with the second branch include: a fluorinated cleaning gas, and an inert gas as a carrier gas for tungsten fluoride gas.

8. A process inflow control method, characterized in that, The process feed system as described in any one of claims 1 to 7 comprises: The preset process steps are executed cyclically, including: The process of inleting the first reactive fluid includes: controlling the first preset valve to open and the first branch valve to close so that the first branch is in a pre-flow state; controlling the first preset valve and the first branch valve to close so that the first branch is in a pressurized state; keeping the first output main line open and controlling the first branch valve to open to perform pulse output of the first reactive fluid; and sequentially controlling the first branch valve to close and the first preset pipeline to open for purging and to prepare for the next pulse output. The process of inleting the second reactive fluid includes: controlling the second preset valve to open and the second branch valve to close so that the second branch is in a pre-flow state; controlling the second preset valve and the second branch valve to close so that the second branch is in a pressurized state; keeping the second output main line open and controlling the second branch valve to open to perform pulse output of the second reactive fluid; and sequentially controlling the second branch valve to close and the second preset pipeline to open for purging and to prepare for the next pulse output.

9. The process inflow control method according to claim 8, characterized in that, Also includes: In the preset process steps, the first mass flow controller is controlled to maintain gas output before the pulse output of the first reaction fluid is completed, and to stop gas output after the pulse output of the first reaction fluid is completed, until the pulse output of the second reaction fluid is completed and gas output is resumed. In the preset process steps, the second mass flow controller is controlled to maintain gas output before the pulse output of the second reaction fluid is completed, and to stop gas output after the pulse output of the second reaction fluid is completed, until the pulse output of the first reaction fluid is completed and gas output resumes.

10. The process inflow control method according to claim 8, characterized in that, In the preset process steps, the first sub-branch connected to the first output main line and the second sub-branch connected to the second output main line are kept connected, and the other fluids in the first sub-branch and the second sub-branch are maintained at their respective preset stable flow rates.

11. A semiconductor process apparatus, characterized in that, include: reaction chamber; The process feed system as described in any one of claims 1 to 7.

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