Substrate processing device, calibration method for substrate processing device, processing method for substrate, manufacturing method for semiconductor device, and calibration program for substrate processing device

Abstract

The present invention provides a technology which comprises: a plurality of injectors which supply a processing gas to a substrate in a processing chamber; a storage unit which is connected to the injectors and accumulates the processing gas; a supply valve which is provided between the injectors and the storage unit; a filling valve which is provided between the storage unit and a gas source that is a supply source of the processing gas; a pressure gauge which measures at least one of the pressure of the atmosphere in the processing chamber, the pressure of an exhaust gas from the processing chamber, and a filling pressure of the storage unit; and a control unit which acquires at least one of the filling pressure at a time when filling to the storage unit is completed and the filling valve is closed, and a waveform of the pressure of the atmosphere or the exhaust gas at a time when the supply valve is opened and the processing gas is supplied to the injectors, and which changes at least one of opening time of the filling valve and the timing of opening the supply valve so that the difference between the acquired filling pressure or the waveform of the pressure and a corresponding reference pressure or a reference waveform of the pressure reduces.

Description

Substrate processing apparatus, calibration method for substrate processing apparatus, substrate processing method, method for manufacturing a semiconductor device, and calibration program for substrate processing apparatus

[0001] This disclosure relates to a substrate processing apparatus, a calibration method for a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a calibration program for a substrate processing apparatus.

[0002] Conventionally, semiconductor manufacturing equipment for manufacturing semiconductor devices is known as an example of substrate processing equipment. As an example of semiconductor manufacturing equipment, Japanese Patent Publication No. 2022-52622, Japanese Patent Publication No. 2020-188237, and Japanese Patent Publication No. 2016-72260 disclose a technology in which raw material gas and inert gas are supplied to a substrate using two gas supply systems. Furthermore, Japanese Patent Publication No. 2011-165959 discloses a vertical semiconductor manufacturing apparatus that processes multiple substrates while holding them in multiple stages in the vertical direction. In the vertical semiconductor manufacturing apparatus, a film deposition process to form a predetermined film on the surface of the substrate can be performed as substrate processing.

[0003] Patent Document 1: International Publication No. 2019 / 181603 Patent Document 2: Japanese Unexamined Patent Publication No. 2022-52622 Patent Document 3: Japanese Unexamined Patent Publication No. 2020-188237 Patent Document 4: Japanese Unexamined Patent Publication No. 2016-72260 Patent Document 5: Japanese Unexamined Patent Publication No. 2011-165959

[0004] As patterns become more complex with each generation, flash feeding, which supplies processing gas to the wafer at high exposure levels in a very short time, requires short duration, high peak pressure, and enhanced scavenging and exhaust. On the other hand, pursuing such flash waveforms shortens the flow time, and due to differences in the supply system's hard wafers, there is a risk of non-uniform flow between multiple gas systems.

[0005] This disclosure has been made in view of the above points and provides a technology that can automatically adjust the pressure waveform of a flash supply.

[0006] According to one aspect of the present disclosure, a technology is provided comprising: a plurality of injectors for supplying a processing gas to a substrate in a processing chamber; a storage unit connected to each of the injectors for accumulating the processing gas; a supply valve provided between the injectors and the storage unit for controlling the fluid communication of the processing gas; a filling valve provided between the storage unit and a gas source which is the source of the processing gas for supplying the processing gas, for controlling the fluid communication of the processing gas, and a pressure gauge for measuring at least one of the pressure of the atmosphere in the processing chamber, the pressure of the exhaust gas from the processing chamber, and the filling pressure of the storage unit; and a control unit configured to acquire at least one of the waveforms of the filling pressure when the filling valve is closed after filling the storage unit is completed, and the waveform of the atmosphere or exhaust gas when the supply valve is opened and processing gas is being supplied to the injectors, and to control the opening time of the filling valve and the opening timing of the supply valve so as to reduce the difference between the acquired waveform of the filling pressure or the pressure and the corresponding reference pressure or reference waveform of the pressure.

[0007] According to this disclosure, a technology can be provided that can automatically adjust the pressure waveform of a flash supply.

[0008] Figure 1 is a diagram showing the configuration of a substrate processing apparatus according to the present disclosure. Figure 2 is a block diagram illustrating the control system of the control unit of the substrate processing apparatus according to the present disclosure. Figure 3 is a diagram showing the structure of a communication frame. Figure 4 is a diagram showing the concept of charge pressure correction. Figure 5 is a flowchart illustrating the charge pressure correction process in substrate processing according to the present disclosure. Figure 6 is a diagram showing the concept of flash waveform correction. Figure 7 is a flowchart illustrating the flash waveform correction process in substrate processing according to the present disclosure. Figure 8 is a diagram showing an example of substrate processing according to the present disclosure.

[0009] Hereinafter, an aspect of this disclosure will be described with reference to Figures 1 to 8. In the drawings, substantially identical elements are denoted by the same reference numerals, and redundant explanations in the specification are omitted. Note that the drawings used in the following description are all schematic, and the dimensional relationships and ratios of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and ratios of the elements do not necessarily correspond between multiple drawings. In addition, unless otherwise specified in the specification, each element is not limited to one, and there may be multiple elements.

[0010] In this specification, numerical ranges such as "3slm to 4slm" mean that the lower and upper limits are included within that range. Therefore, for example, "3slm to 4slm" means "3slm or more and 4slm or less." The same applies to other numerical ranges.

[0011] Figure 1 is a diagram showing the schematic configuration of a substrate processing apparatus 10 according to this embodiment. As shown in Figure 1, the substrate processing apparatus 10 comprises control units 280a and 280b that control each part and a processing chamber 201. The processing chamber 201 processes a wafer 200 as a substrate. The wafer 200 is an example of a semiconductor of this disclosure. Gas supply pipes 310a and 310b that supply processing gas into the processing chamber 201 are connected to the processing chamber 201. Processing gas is injected into the processing chamber 201 from nozzles 340a and 340b that act as injectors. The nozzles 340a and 340b have injection holes that communicate with the processing chamber 201. The nozzles 340a and 340b may be arranged in the processing chamber 201 in a mirror-image symmetrical manner with respect to a plane that includes the central axis of the processing chamber 201 or a plane that passes through the center of the wafer 200 and is perpendicular to the main surface of the wafer 200. Furthermore, an exhaust duct 231 for discharging the gas from within the processing chamber 201 is connected to the processing chamber 201. For example, a Si and halogen-containing gas can be used as the processing gas. In Figure 1, hexachlorodisilane (Si) is used as the processing gas. ２ Cl ６ This refers to gas (abbreviated as HCDS), but there are other examples, such as tetrachlorosilane (SiCl ４ (Abbreviation: STC) gas, octachlorotrisilane (Si ３ Cl８ Inorganic chlorosilane gases such as OCTS gas can be used. One or more of these can be used as the Si and halogen-containing gases.

[0012] In this specification, the term "wafer" may refer to the wafer itself or to a laminate of a wafer and a predetermined layer or film formed on its surface. In this specification, the term "surface of the wafer" may refer to the surface of the wafer itself or to the surface of a predetermined layer formed on the wafer. In this specification, when it is stated that "a predetermined layer is formed on the wafer," it may mean that the predetermined layer is formed directly on the surface of the wafer itself or that the predetermined layer is formed on a layer already formed on the wafer. In this specification, the term "substrate" has the same meaning as when it is used with the term "wafer."

[0013] In the gas supply pipe 310a, downstream of the vaporizer (not shown), which is the gas source for supplying raw material gas as a process gas, the following are provided in order from upstream to downstream: a mass flow controller (MFC) 320a for controlling the flow rate from the vaporizer, a filling valve 390a, a storage tank 322a, and a supply valve 330a. Similarly, in the gas supply pipe 310b, downstream of the vaporizer, the following are provided in order from upstream to downstream: a mass flow controller (MFC) 320b for controlling the flow rate from the vaporizer, a filling valve 390b, a storage tank 322b, and a supply valve 330b. Valves 330a and 330b control the fluid communication of the process gas.

[0014] Valves 330a, 330b, 390a, and 390b are opened and closed by a solenoid valve 350. The solenoid valve 350 and the valves 330a, 330b, 390a, 390b are connected by a flexible tube (air hose) 351. The solenoid valve 350 is driven in response to an electric signal from the control unit 280b, and controls the opening / closing timing and opening / closing operation of the valves 330a, 330b, 390a, 390b. By the operation of the solenoid valve 350, a driving fluid such as compressed air is supplied to the valves 330a, 330b, 390a, 390b via the flexible tube 351, the actuator in each valve is driven, and each valve is opened and closed at a predetermined timing.

[0015] The MFC 320a and MFC 320b supply gas to each of the pair of tanks 322a and 322b at a preset flow rate that is set in advance to form a reference accumulated amount as the target amount of gas. Although not illustrated, each of the MFC 320a and MFC 320b has an orifice and a control valve that controls the pressure of the gas on the primary side of the orifice. Both the MFC 320a and MFC 320b control the gas flow rate by utilizing the choked flow of the orifice.

[0016] The tanks 322a and 322b supply the accumulated source gas to the nozzles 340a and 340b in a pulsed manner substantially simultaneously through the supply valves. That is, in the present embodiment, flash supply of a high-concentration processing gas can be performed. In the flash supply, the processing gas accumulated in the tanks 322a and 322b is supplied at a large flow rate from the tanks 322a and 322b toward the reaction tube 203. The processing gas supplied at a large flow rate is also referred to as "flash flow". The source gas of the flash flow flows at a relatively high speed over the surface of the wafer 200 in the processing chamber 201 during the film forming process.

[0017] By the flash supply, the entire surface of the wafer 200 is exposed to the high-speed flow of the processing gas during the film forming process. The high-speed flow of the processing gas is one of the most effective methods for promoting gas replacement inside microstructures such as trenches and holes formed on the surface of the wafer 200, and is particularly useful in the processing of pattern wafers with high aspect ratios.

[0018] It should be noted that the present disclosure is not limited to the flash supply of a processing gas, and may be applied to, for example, large-flow supply of a purge gas. Pressure fluctuations of the purge gas can also promote gas replacement inside the fine structure.

[0019] Corresponding pressure sensors 400a and 400b are respectively provided on the upstream side of each of the tank 322a and the tank 322b. The pressure sensors 400a and 400b are an example of the second pressure gauge of the present disclosure. The pressure sensor 400a and the pressure sensor 400b measure the internal pressure of the tank 322a and the tank 322b each during gas accumulation.

[0020] In the present embodiment, the system including the MFC 320a, the valve 390a, the tank 322a, the valve 330a, and the nozzle 340a is referred to as "LINE A", and the system including the MFC 320b, the valve 390b, the tank 322b, the valve 330b, and the nozzle 340b is referred to as "LINE B". LINE A is an example of the first supply system of the present disclosure, and LINE B is an example of the first supply system of the present disclosure.

[0021] The exhaust duct 231 is provided with a pressure sensor 245 that detects the pressure of the atmosphere inside the processing chamber 201, and an APC (Auto Pressure Controller) valve 244 as a pressure regulator. The pressure sensor 245 is an example of the first pressure gauge of the present disclosure. The downstream side of the vacuum pump 246 is connected to an unillustrated waste gas treatment apparatus or the like. By controlling the output of the vacuum pump 246 and the opening degree of the APC valve 244, the apparatus is configured to be capable of vacuum evacuation so that the internal pressure of the processing chamber 201 reaches a predetermined pressure (that is, a degree of vacuum). The first pressure gauge and the second pressure gauge are collectively referred to as a pressure gauge.

[0022] In this embodiment, the control unit 280a functions as a PMC (Process Main Controller), and the control unit 280b functions as a PLC (Programmable Logic Controller). The control unit 280a oversees the entire process of the substrate processing apparatus 10 and, based on the recipe, partially instructs each part via the control unit 280b on the order of each processing step, the flow rate setting of the processing gas, the processing time, and the setting of pressure and temperature, thereby managing the progress of the process of the entire apparatus. In this embodiment, the control unit 280a is configured to control the flow rate adjustment operation of various gases by the MFCs 320a and 320b, the opening and closing operation of the APC valve 244, and the starting and stopping of the vacuum pump 246. The control unit 280b is also configured to acquire pressure from pressure sensors 245, 400a, and 400b, and to fine-tune the opening and closing timing of valves 330a, 330b, 390a, and 390b based on the acquired pressure.

[0023] (Control Unit) Next, the control units 280a and 280b will be described with reference to Figure 2. Figure 2 is a block diagram showing the substrate processing apparatus 10, and the control unit 280a of the substrate processing apparatus 10 is configured as a computer. This computer includes a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. Similarly, the control unit 280b is configured as a computer. This computer includes a CPU 121f, RAM 121g, a storage device 121h, and an I / O port 121i. The control units 280a and 280b are connected to each of the components shown in Figure 2 by a communication channel. This communication channel has a transmission speed of 100 Mbps or more. With a transmission speed of 100 Mbps or more, high-speed communication between the pressure sensors 245, 400a, 400b and the control units 280a, 280b improves the responsiveness of pressure waveform acquisition and control during substrate processing, enabling quick and precise gas control. Since the control units 280a and 280b basically operate as a single unit, they are collectively referred to as the control unit or controller 280.

[0024] The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e. An input / output device 122, configured as, for example, a touch panel, is connected to the control unit 280a. The RAM 121g, storage device 121h, and I / O port 121i are configured to exchange data with the CPU 121f via the internal bus 121j.

[0025] The storage device 121c is composed of, for example, flash memory, an HDD (Hard Disk Drive), etc. The storage device 121c contains, in a readable format, control programs that control the operation of the substrate processing device, and process recipes that describe the procedures and conditions for substrate processing, as described later.

[0026] The process recipe is a combination of steps in the substrate processing process described later, which are executed by the control unit 280a to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, control program, etc., will be collectively referred to simply as the program.

[0027] In this specification, the term "program" may include only a process recipe, only a control program, or both. The RAM 121b is configured as a memory area (i.e., a work area) where programs and data read by the CPU 121a are temporarily held. In addition, this disclosure may provide a computer-readable recording medium on which programs and data are recorded.

[0028] I / O port 121d is connected to MFCs 320a and 320b. MFCs 320a and 320b are connected to APC valve 244, which in turn is connected to vacuum pump 246. In other words, the control unit 280a, MFCs 320a and 320b, APC valve 244, and vacuum pump 246 are daisy-chained. The vacuum pump 246 is connected to I / O port 121i of the control unit 280b.

[0029] CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a process recipe from the storage device 121c in response to input of operation commands from the input / output device 122, etc. Similarly, CPU 121f is configured to read and execute a control program from the storage device 121h. CPUs 121b and 121f are processors according to this disclosure. Control units 280a and 280b each have at least one processor.

[0030] CPU 121a is configured to control the flow rate adjustment operations of various gases by MFCs 320a and 320b, and the opening and closing operations of APC valve 244, in accordance with the contents of the read process recipe. CPU 121a is also configured to control the starting and stopping of the vacuum pump 246. CPU 121f is configured to control the pressure adjustment operations of APC valve 244 based on pressure sensor 245, and the opening and closing operations of valves 330a, 330b, 390a, and 390b based on pressure sensors 400a and 400b. In this case, CPU 121f controls the opening and closing operations of valves 330a, 330b, 390a, and 390b based on instructions from CPU 121a.

[0031] The control units 280a and 280b are not limited to being configured as dedicated computers, but may also be configured as general-purpose computers. For example, the control units 280a and 280b of this embodiment can be configured by preparing an external storage device 123 containing the above-mentioned program and installing the program on a general-purpose computer using this external storage device 123. Examples of external storage devices include magnetic disks such as hard disks, optical disks such as CDs, magneto-optical disks such as MOs, and semiconductor memory such as USB memory.

[0032] Figure 3 is a diagram illustrating the structure of communication frames transmitted and received in the substrate processing apparatus 10. A communication frame 500 shown in Figure 3 is a data frame compliant with EtherCAT. As shown in Figure 3, the communication frame 500 includes an Ethernet header 511, Ethernet data 512B, and a frame check sequence 513. The Ethernet data 512B includes a datagram 520B. The datagram 520B includes a datagram header 521B, monitor data 522B1, and monitor data 523B １ , ..., monitor data 522B Ｎ , monitor data 523B Ｎ . The datagram header 521B includes the address of the control unit 280. The monitor data 523B ｎ is monitor data in the data frame 300 acquired by MFCs 320a, 320b, valves 330a, 330b, 390a, 390b, pressure sensors 400a, 400b, pressure sensor 245, APC valve 244, and vacuum pump 246 connected to the I / O port 121d.

[0033] The control units 280a and 280b send out the communication frames shown in Figure 3 at a fixed period (called the cycle time), and the slave devices connected to the control units 280a and 280b process them the moment they are received. The cycle time is preferably 10 ms or less, more preferably 1 ms or less. In other words, the control unit 280b can acquire pressure from the pressure sensors 245, 400a, and 400b at each cycle time. The control unit 280b relays commands from the control unit 280a to the valves 330a, 330b, 390a, 390b, etc. The relay operation is processed by a task that operates periodically inside the control unit 280b. The sample interval, which is the interval at which the task is processed, is preferably 10 ms or less, more preferably 1 ms or less. The control unit 280b is configured to output an open / close instruction to at least one, more preferably all, of the valves 330a, 330b and 390a, 390b at the timing of any one task, based on tasks executed at a period of 10 ms or less. In this embodiment, the relay delay amount is adjusted for a specific operation of a specific valve in the valves 330a, 330b, 390a, 390b, thereby adjusting the filling time t described later. ｃ Correction value t ａｃ Correction value t for the opening time of the supply valve ａｄ It can be implemented.

[0034] Next, a calibration method for the substrate processing apparatus 10 according to this embodiment will be described with reference to Figures 4 to 7. The calibration method for the substrate processing apparatus 10 according to this embodiment includes a charge pressure correction process exemplified in Figure 4, which is performed before the film deposition process, and a flash waveform correction process exemplified in Figure 6.

[0035] [Charge Pressure Correction Process] (Concept) As described above, pursuing an ideal flash waveform shortens the flash time, resulting in non-uniform flow between multiple gas systems due to hardware-related differences in the supply system. Hardware-related differences include delays due to differences in tube length (10 ms per meter), delays due to differences in piping length (20 ms per meter), and delays due to variations in MFC charge times. In addition, hardware-related differences include imbalances in the piping shape of the processing gas supply line. By correcting the charge pressure, it becomes possible to appropriately supply the processing gas to the processing chamber even when the flow is non-uniform between multiple gas systems.

[0036] Figure 4 illustrates the concept of charge pressure correction, showing charge pressure correction in two supply systems (LINE A and LINE B). The horizontal axis represents the time until the filling valves 390a and 390b close, and the vertical axis represents the pressure measured by the pressure sensor that measures the tank filling pressure.

[0037] In LINE A, as shown in "Before Correction," the pressure at the time the filling valve 390a closes is higher than the target value. In this case, the filling time is corrected to shorten the time until valve 390a closes so that the pressure reaches the target value, as shown in "After Correction." On the other hand, in LINE B, as shown in "Before Correction," the pressure at the time the filling valve 390a closes is lower than the target value. In this case, the filling time is corrected to lengthen the time until valve 390a closes so that the pressure reaches the target value, as shown in "After Correction."

[0038] Figure 5 is a flowchart illustrating the charge pressure correction process according to this embodiment. First, prior to substrate processing, the control unit 280b executes a predetermined program, thereby performing the processes from steps S1 to S8.

[0039] (Filling time t ｃ Correction value t ａｃ (Settings) In the charge pressure correction process, first, as shown in step S1 in Figure 5, the control unit 280b controls the filling time t ｃ Correction value t ａｃ Set it to 0.

[0040] (Opening of filling valves) Next, as shown in step S2 in Figure 5, the control unit 280b opens valve 390a, which is a filling valve provided between MFC 320a and tank 322a in the first gas supply system 301a, and also opens valve 390b, which is a filling valve provided between MFC 320b and tank 322b in the second gas supply system 301b. By opening valves 390a and 390b, gas is accumulated in tanks 322a and 322b.

[0041] (Waiting for a predetermined time) Next, as shown in step S3 in Figure 5, the control unit 280b waits for a given filling time t ｃ + time t ａｃ Wait.

[0042] (Filling valve closing) Next, as shown in step S4 in Figure 5, the operator uses the control unit 280b to set the gas accumulation time t in the film formation process. ａｃｍ For the same amount of time, the processed gas is stored in tanks 322a and 322b. After the gas has been stored, valves 390a and 390b are closed.

[0043] (Tank pressure acquisition) Next, as shown in step S5 in Figure 5, the control unit 280b acquires the pressure of tanks 322a and 322b through pressure sensors 400a and 400.

[0044] (Opening the discharge valves) Next, as shown in step S6 in Figure 5, the control unit 280b evacuates the processing furnace 202 and opens valve 330a, which is the discharge valve for tank 322a, and valve 330b, which is the discharge valve for tank 322b, until the pressure inside tanks 322a and 322b returns to a predetermined pre-accumulation pressure (for example, about 100 kPa to about 1 kPa).

[0045] (Update correction value) Next, as shown in step S7 in Figure 5, the control unit 280b updates the filling time t ｃ Correction value t ａｃ Update the following: Specifically, the error in the tank pressure relative to the target pressure is P. ｅ Tank volume V ｔ MFC flow rate q, step size parameter μ ｃ (0 < μ)ｃ If ≤ 1), the control unit 280 will adjust the correction value t ａｃ to ａｃ -μ ｃ (P ｅ ・V ｔ Update with / q).

[0046] (Performance a predetermined number of times) Next, as shown in step S8 in Figure 5, steps S2 to S7 described above are repeated a predetermined number of times. In steps S2 to S7 from the second time onward (i.e., N≧2), the filling time t that is subject to correction is ｃ Correction value t ａｃ For this purpose, the correction value updated in the preceding step S7 is used. That is, for the second and subsequent filling times t ｃ Correction value t ａｃ For example, the most recently updated filling time t ｃ Correction value t ａｃ The value of is the "correction value t" in steps S2 to S7 above. ａｃ It is treated as such. Therefore, the accuracy of the filling time correction is improved by repeating steps S2 to S6 described above.

[0047] [Flash Waveform Correction Process] Figure 6 is a diagram illustrating the concept of flash waveform correction, and shows the flash waveform correction in two supply systems (LINE A and LINE B). The horizontal axis represents the time until the supply valves 330a and 330b open, and the vertical axis represents the pressure measured by the pressure sensor that measures the exhaust gas pressure from the processing chamber.

[0048] As shown in "Before Correction," there is a difference between the flash waveform obtained from the pressure measured from the opening of valve 330a, which is the supply valve in LINE A, and the flash waveform obtained from the pressure measured from the opening of valve 330b in LINE B. In the example shown in Figure 6, the peak of the flash waveform obtained from the pressure measured from the opening of valve 330b is earlier than the peak of the flash waveform obtained from the pressure measured from the opening of valve 330a (the position where the pressure is maximum). In this case, a flash waveform correction process is performed to lengthen the time from the opening to the closing of valve 330b so that the peaks of the two flash waveforms coincide, as shown in "After Correction."

[0049] Figure 7 is a flowchart illustrating the flash waveform correction process in substrate processing according to this embodiment. First, prior to substrate processing, the control unit 280 executes a predetermined program, which performs the processes from steps S11 to S16. Below, we will describe an example in which the gas supply system 301 with the later peak of the flash waveform and its peak time are known, and these are used as the reference waveform.

[0050] (Correction value t for release time) ａｄ (Settings) In the flash waveform correction process, first, as shown in step S11 in Figure 7, the operator uses the control unit 280 to set a correction value t for the opening time of the supply valves 330a and 330b. ａｄ Set it to 0.

[0051] (Opening the supply valve) Next, as shown in step S12 in Figure 7, the control unit 280b adjusts the correction value t ａｄ At the corrected opening time, valve 330a, which is a supply valve located between MFC 320a and tank 322a, or valve 330b, which is a supply valve located between MFC 320b and tank 322b, is opened in the first gas supply system 301a or the second gas supply system 301b, where the peak of the flash waveform is earlier. By opening valves 330a and 330b, the processing gas that has been previously filled into tanks 322a and 322b to the target pressure is flash-supplied to the processing chamber 201.

[0052] (Pressure waveform acquisition) Next, as shown in step S13 in Figure 7, the control unit 280b acquires and stores the pressure waveform inside the reaction tube 203 during flash supply using the pressure sensor 245.

[0053] (Supply valve closing) Next, as shown in step S14 in Figure 7, the control unit 280b supplies processing gas from tank 322a or tank 322b to the processing chamber 201 for the duration of the flash time during substrate processing in step S17, and then closes valve 330a or 330b.

[0054] Next, as shown in step S15 in Figure 7, the control unit 280a or control unit 280b compares the acquired pressure waveform with a reference pressure or reference waveform pre-stored in the storage device 121c, and calculates the substantial time difference t of the peak position. ｐｅ The step size parameter μ is calculated. ｄ (0 < μ) ｄ If ≤ 1, then the correction value t ａｄ to ａｄ -μ ｄ ・t ｐｅ The data is updated accordingly. The control unit 280 may also use the time of the maximum value detected after filtering the acquired waveform in the time domain as the peak position (time when the pressure is at its maximum) in the acquired pressure waveform. Since the control unit 280b can accurately detect the peak time of the pressure waveform by filtering, it can reduce noise and errors in the pressure waveform and improve the reproducibility of the processing gas supply.

[0055] Next, as shown in step S16 in Figure 7, the control unit 280 repeats steps S12 to S15 a predetermined number of times. In steps S12 to S15 from the second time onward (i.e., N≧2), the correction value t of the release time, which is the target of correction, is applied. ａｄ The correction value updated in the preceding step S15 is used. That is, the correction value t for the second and subsequent release times. ａｄ The correction value t of the release time that was updated immediately before. ａｄ The value of is the "correction value t" in steps S12 to S15 above. ａｄIt is treated as such. Therefore, by repeating steps S12 to S15 above, the accuracy of the release time correction is improved.

[0056] Finally, as shown in step S17 in Figure 7, the control unit 280 loads the wafer 200 into the processing chamber 201, processes the wafer 200 according to a predetermined recipe involving simultaneous flash supply from the first gas supply system 301a and the second gas supply system 301b, unloads the wafer 200 with the predetermined film formed on it from the processing chamber 201, and ends the processing. It is desirable that the flash supply in steps S11 to S16 and the storage in the tank for flash supply be carried out under the same conditions as the flash supply in the recipe of step S17, except that only one of the first gas supply system 301a and the second gas supply system 301b is operated.

[0057] Figure 8 shows an example of the process for processing the substrate in step S17. The processing process includes one or more cycles in which the control unit 280b opens valves 330a and 330b at an adjusted timing to supply substantially the same raw material gas to the processing chamber 201 from nozzle 340a of LINE A and nozzle 340b of LINE B in a balanced manner; a second step in which an inert gas is supplied from at least one of nozzles 340a, 340b and other arbitrary nozzles after the first step; a third step in which a reaction gas is supplied from at least one of nozzles 340a, 340b and other arbitrary nozzles after the third step; and a fourth step in which an inert gas is supplied from at least one of nozzles 340a, 340b and other arbitrary nozzles after the third step. The first to third steps are carried out by the control unit 280a or control unit 280b controlling valves 330a, etc.

[0058] The control unit 280b may acquire a pressure waveform from the pressure sensor 245 when supplying processing gas by opening only one of the valves 330a, 330b of LINE A or LINE B, and control the timing of opening at least one of the valves 330a, 330b of LINE A and LINE B so that the difference in the time when the pressure is maximum in the acquired waveforms of LINE A and LINE B becomes small. For example, either the first gas supply system 301a or the second gas supply system 301b can be used as a reference, and a reference waveform can be acquired by performing steps S12 to S14 with respect to the reference system, and the other system can be calibrated. Alternatively, either one of the gas supply systems 301 of another substrate processing device (master device) can be used as a reference, and both the first gas supply system 301a and the second gas supply system 301b can be calibrated. By controlling in this way, the gas flow in the processing chamber 201 during flash supply becomes symmetrical. By making the gas flow within the processing chamber 201 symmetrical, vortices and turbulence are less likely to occur, improving the reproducibility of the gas flow and enabling rapid exhaust. Furthermore, the control unit 280b optimizes the timing of supplying the processing gas from the two systems in a mirror-symmetric manner, thereby making the gas flow within the processing chamber 201 symmetrical, suppressing the generation of vortices and turbulence, and improving the uniformity of the film thickness and film quality distribution on the substrate.

[0059] According to this embodiment, differences in the processing gas supply system can be automatically corrected, allowing for stable reproduction of the flash flow pressure waveform and improving the quality and uniformity of substrate processing. Furthermore, according to this embodiment, by adjusting the filling time or filling timing based on the peak difference between the two systems, the supply balance of processing gas in the processing chamber 201 is improved, further enhancing the uniformity and reproducibility of substrate processing.

[0060] <Other Aspects of the Disclosure> Although this disclosure has been described in accordance with the embodiments disclosed above, the descriptions and drawings that constitute part of this disclosure should not be understood as limiting this disclosure. This disclosure is not limited to the embodiments described above and can be modified in various ways without departing from its essence.

[0061] For example, the above-described embodiment described an example of forming a film using a vertical batch-type substrate processing apparatus that processes multiple substrates at once. However, this disclosure is not limited to the above-described embodiment. This disclosure can also be suitably applied to cases where a film is formed using, for example, a single-wafer substrate processing apparatus that processes one substrate at a time, or a multi-wafer substrate processing apparatus that processes multiple substrates.

[0062] Furthermore, for example, in the explanation of Figure 2, it was described that the CPU 121f receives opening and closing instructions for valves 330a, 330b, 390a, and 390b from the CPU 121a, but this disclosure is not limited to the above-described embodiment. This disclosure also describes, for example, a CPU 121f that receives only the reference processing timing and setting conditions from the control unit 280a, and uses its own clock function and internal calculation function to correct a correction value t in real time ａｃ and t ａｄ Optimal scheduling reflecting these factors may be implemented, and each valve may be controlled independently. With such a configuration, the control unit 280b can quickly correct its operation according to the site conditions, and time lags or processing delays associated with instruction communication from the control unit 280a are suppressed, making it possible to achieve a more accurate and stable supply of processing gas.

[0063] The cycle time of EtherCAT can be shorter than 1 ms, for example, around 250 μs. The ability to acquire pressure at each cycle time is independent of the response time of the pressure sensors 245, 400a, and 400b (the time from when the pressure changes until that change appears in the measured value, which is usually around 30 ms). EtherCAT can acquire the latest measured values ​​that the pressure sensors 245, 400a, and 400b have internally updated and stored. The update rate of the measured values ​​of the pressure sensors 245, 400a, and 400b is usually faster than the response time. It is preferable to set the cycle time of EtherCAT to less than or equal to half the update cycle of the measured values ​​of the pressure sensors 245, 400a, and 400b, as this reduces the time from when the measured value is updated until it can be retrieved, as well as the fluctuation (jitter) of the measured value. If the update rate of the measured values ​​from pressure sensors 245, 400a, and 400b is set too fast, the signal-to-noise ratio (S / N) deteriorates, and noise (fluctuations at a predetermined frequency, such as power supply hum noise) is superimposed on the actual data. Therefore, it is preferable for the control unit 280b to perform filtering on the waveforms acquired from pressure sensors 245, 400a, and 400b.

[0064] Furthermore, the comparison of the pressure waveform of the processing chamber 201 with the reference waveform by the control unit 280b is not limited to being based on the peak value of the pressure waveform, but may be performed using various methods to accurately evaluate the characteristics of the pressure waveform. For example, in order to evaluate the similarity between the acquired pressure waveform and the reference waveform, the control unit 280b may, in addition to simply comparing the peak values ​​of both waveforms, extract specific features of the pressure waveform, such as the centroid position in the time direction of the waveform, the rise time of the waveform, and the peak width (half-width), and apply a method to compare these features. In addition, in order to evaluate the degree of agreement between the acquired waveform and the reference waveform more quantitatively and objectively, the control unit 280b may apply cross-correlation analysis to find the correlation coefficient between the two waveforms and the difference in the peak position of the correlation value, and adjust the opening and closing timing of each valve and the filling time to each tank so that this difference is small. By using such waveform analysis methods, minute changes in the pressure waveform can be captured and reflected in the control, thereby further improving the reproducibility of process conditions and the uniformity of film quality on the substrate. Furthermore, in evaluating the pressure waveform, multiple waveform acquisitions are performed, and the average of the acquired waveforms is adopted as the reference waveform, thereby reducing the effects of measurement errors and noise. In this case, the reference waveform more accurately reflects the actual operation of the substrate processing device 10, making it possible to further improve the correction accuracy.

[0065] Furthermore, the correction of the supply valve opening time can also be performed to optimize an indicator from a different perspective. For example, similar to substrate processing, when flash supply is performed simultaneously from multiple gas supply systems, the correction value t can be increased to make the ratio between the peak value of the processing chamber pressure and the value after a predetermined time from the start of flash supply larger. ａｄ You may decide that.

[0066] Furthermore, although the charge pressure correction in Figures 4 and 5 was described as determining the next filling time based on the error in the filling pressure, this disclosure is not limited to the above-described embodiments. The control unit 280b may also detect that the filling pressure has reached a target value and control it to close the filling valves 390a and 390b. In that case, the closing command for valves 390a and 390b from the control unit 280a based on the recipe is discarded by the control unit 280b.

[0067] Furthermore, charge pressure correction can also be performed to optimize an indicator from a different perspective. For example, a correction value t can be used to make the shape of the pressure waveform in the processing chamber closer to that of the reference waveform. ａｃ This can be determined. In this case, the difference in waveform shape can be evaluated based on an indicator that is not affected by errors in the opening time of the supply valve, such as the peak pressure value or the time the pressure exceeds a predetermined value. This method eliminates the need to consider errors between the two second pressure gauges that measure the filling pressure.

[0068] According to the substrate processing apparatus 10 of the present disclosure, various machine error factors described above can be corrected collectively simply by adjusting the opening and closing timing of valves 390a, 390b and valves 330a, 330b. The substrate processing apparatus 10 of the present disclosure can sufficiently reduce the difference between processing gas supply systems by adjusting the opening and closing timing in milliseconds. Changing the recipe requires user approval, but the substrate processing apparatus 10 of the present disclosure can be implemented independently of the recipe because it only fine-tunes the opening and closing timing in the name of correcting machine errors. Furthermore, according to the substrate processing apparatus 10 of the present disclosure, since both the filling pressure and flash waveform are made to follow reference values, the gas supply amount and gas supply timing can be adjusted with greater precision, further improving the reproducibility and uniformity of film formation on the substrate.

[0069] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and conditions as described above, and the same effects as described above can be obtained.

[0070] Furthermore, the present disclosure may be constructed by partially combining the configurations included in the multiple embodiments, modifications, and aspects disclosed above. In the present disclosure constructed by such combination, the processing procedures and processing conditions to be performed can be configured, for example, in the same way as the processing procedures and processing conditions described in the embodiments of this present example.

[0071] This disclosure includes various embodiments not described above, and the technical scope of this disclosure is defined solely by the inventive features of the claims that are reasonable in light of the above description.

[0072] 10 Substrate Processing Equipment 201 Processing Chamber 245 Pressure Sensor 280a Control Unit 280b Control Unit 320a Mass Flow Controller (MFC) (Flow Limiter) 320b Mass Flow Controller (MFC) (Flow Limiter) 322a Tank 322b Tank 340a Nozzle 340b Nozzle 390a Valve 390b Valve 400a Pressure Sensor 400b Pressure Sensor

Claims

1. A substrate processing apparatus comprising: a plurality of injectors for supplying a processing gas to a substrate in a processing chamber; a storage unit connected to each of the injectors for accumulating the processing gas; a supply valve provided between the injectors and the storage unit for controlling the fluid communication of the processing gas; a filling valve provided between the storage unit and a gas source which is the source of the processing gas for supplying the processing gas, for controlling the fluid communication of the processing gas, and a pressure gauge for measuring at least one of the pressure of the atmosphere in the processing chamber, the pressure of the exhaust gas from the processing chamber, and the filling pressure of the storage unit; and a control unit configured to acquire at least one of the waveforms of the filling pressure when the filling valve is closed after filling the storage unit is completed, and the waveform of the atmosphere or exhaust gas when the supply valve is opened and processing gas is being supplied to the injectors, and to control the opening time of the filling valve and the opening timing of the supply valve so as to reduce the difference between the acquired waveform of the filling pressure or the pressure and the corresponding reference pressure or reference waveform of the pressure.

2. The substrate processing apparatus according to claim 1, wherein the pressure gauge includes a first pressure gauge for measuring the pressure of the atmosphere inside the processing chamber or the pressure of the exhaust gas from the processing chamber, and a second pressure gauge for measuring the filling pressure of the storage section.

3. The substrate processing apparatus according to claim 2, wherein the control unit is configured to acquire both the filling pressure when filling is completed and the filling valve is closed, and the pressure waveform acquired by the first pressure gauge when the supply valve is opened and processing gas is supplied to the injector, and to control both the opening time of the filling valve and the timing of opening the supply valve so that the difference between the acquired filling pressure or pressure waveform and the corresponding reference pressure or pressure reference waveform becomes small.

4. The substrate processing apparatus according to claim 2 or 3, wherein the control unit is configured to acquire a pressure waveform obtained by the first pressure gauge when the supply valve is opened and processing gas is supplied to the injector, and to control the timing of opening the supply valve so that the difference between the time when the pressure in the acquired waveform is maximum and the time when the pressure in the reference waveform is maximum becomes small.

5. The substrate processing apparatus according to claim 2 or 3, comprising a first supply system and a second supply system, each including the injector, the storage unit, the supply valve, the filling valve, and the second pressure gauge, wherein the control unit is configured to acquire a pressure waveform from the first pressure gauge when supplying processing gas to the injector by opening the supply valve using only one of the first supply system or the second supply system, and to control the timing of opening the supply valve of at least one of the first supply system and the second supply system so that the difference in the time when the pressure in the acquired waveforms of the first supply system and the second supply system is maximum becomes small.

6. The substrate processing apparatus according to claim 5, wherein the injectors of the first supply system and the second supply system are arranged mirror-symmetrically within the processing chamber, and the control unit is configured to supply substantially the same type of processing gas to the processing chamber substantially simultaneously and in a balanced manner from the first supply system and the second supply system by opening the supply valve of at least one of the first supply system and the second supply system at an adjusted timing.

7. The substrate processing apparatus according to claim 2 or 3, wherein at least one of the first pressure gauge and the second pressure gauge is configured to output pressure values ​​at a sample interval of 10 ms or less.

8. The substrate processing apparatus according to claim 2 or 3, further comprising a communication path that enables communication between at least one of the first pressure gauge and the second pressure gauge and the control unit, wherein the communication path has a transmission speed of 100 Mbps or more.

9. The substrate processing apparatus according to claim 1 or 2, further comprising a communication path that enables communication between at least one of the supply valve and the filling valve and the control unit, wherein the communication path has a transmission speed of 100 Mbps or more.

10. The substrate processing apparatus according to claim 1 or 2, wherein the control unit is configured to output an opening / closing instruction to at least one of the supply valve and the filling valve at the timing of any one task, based on a task performed with a period of 10 ms or less.

11. The substrate processing apparatus according to claim 4, wherein the control unit uses the time of the maximum value detected after filtering the acquired waveform in the time domain as the time when the pressure in the acquired waveform is at its maximum.

12. The substrate processing apparatus according to claim 5, wherein the control unit performs the adjustment by using the one with the higher peak of the acquired filling pressure waveform as the reference pressure, or by using the one with the later time of maximum pressure as the reference waveform, and either extending the opening time of the filling valve of the other supply valve or delaying the timing of opening the supply valve.

13. (a) A step of filling the storage section with the processing gas by opening a filling valve, which is provided between a gas source that is a source of processing gas and a storage section that stores the processing gas, for a certain period of time; (b) A step of closing the filling valve after step (a); (c) A step of opening a supply valve, which is provided between an injector having an injection hole communicating with the processing chamber and which supplies the processing gas to a substrate in the processing chamber, and the storage section, at a predetermined timing, and supplying the processing gas into the processing chamber from the injection hole of the injector that communicates with the processing chamber; (d) A calibration method for a substrate processing apparatus, comprising the steps of: (d) acquiring at least one of the waveform of the atmospheric pressure inside the processing chamber or the exhaust gas pressure inside the processing chamber acquired when the supply valve is open and supply is being performed, and the filling pressure inside the storage unit acquired when the filling valve is closed and filling inside the storage unit is completed, and the control unit changing at least one of the timing for opening the supply valve and the opening time of the filling valve so that the difference between the acquired waveform or the filling pressure and the corresponding reference waveform or reference pressure becomes small.

14. (a) A step of filling the storage section with the processing gas by opening a filling valve, which is provided between a gas source that is a source of processing gas and a storage section that stores the processing gas, for a certain period of time; (b) A step of closing the filling valve after step (a); (c) A step of opening a supply valve, which is provided between an injector having an injection hole communicating with the processing chamber and which supplies the processing gas to a substrate in the processing chamber, and the storage section, at a predetermined timing, and supplying the processing gas into the processing chamber from the injection hole of the injector that communicates with the processing chamber; (d) A substrate processing method comprising: (d) acquiring at least one of the waveform of the atmospheric pressure inside the processing chamber or the exhaust gas pressure inside the processing chamber acquired when the supply valve is open and supply is being performed, and the filling pressure of the storage unit acquired when the filling valve is closed and filling of the storage unit is completed, and the control unit changing at least one of the timing for opening the supply valve and the opening time of the filling valve so that the difference between the acquired waveform or the filling pressure and the corresponding reference waveform or reference pressure becomes small; (e) After step (d), supplying the processing gas to the substrate inside the processing chamber using the changed timing or opening time.

15. (f) The substrate processing method according to claim 14, further comprising the steps (a) to (d) being performed separately for a first supply system and a second supply system, each including the injector, the storage unit, the supply valve, and the filling valve, respectively, wherein step (e) is performed by simultaneously supplying the processing gas using the first supply system and the second supply system.

16. (a) A step of filling the storage section with the processing gas by opening a filling valve, which is provided between a gas source that is a source of processing gas and a storage section that stores the processing gas, for a certain period of time; (b) A step of closing the filling valve after step (a); (c) A step of opening a supply valve, which is provided between an injector having an injection hole communicating with the processing chamber and which supplies the processing gas to a substrate in the processing chamber, and the storage section, at a predetermined timing, and supplying the processing gas into the processing chamber from the injection hole of the injector that communicates with the processing chamber; (d) A method for manufacturing a semiconductor device, comprising: (d) acquiring at least one of the waveform of the atmospheric pressure inside the processing chamber or the exhaust gas pressure inside the processing chamber acquired when the supply valve is open and supply is being performed, and the filling pressure of the storage unit acquired when the filling valve is closed and filling of the storage unit is completed, and the control unit changing at least one of the timing for opening the supply valve and the opening time of the filling valve so that the difference between the acquired waveform or the filling pressure and the corresponding reference waveform or reference pressure becomes small; (e) After step (d), supplying the processing gas to the semiconductor inside the processing chamber using the changed timing or opening time; 17. The computer provides a process of: (a) filling the storage unit with the processing gas by opening a filling valve, which is provided between a gas source that is a source of processing gas and a storage unit that stores the processing gas, for a certain period of time; (b) closing the filling valve after step (a); and (c) opening a supply valve, which is provided between an injector having an injection hole that communicates with the processing chamber and supplies the processing gas to a substrate in the processing chamber, and the storage unit, at a predetermined timing, and supplying the processing gas into the processing chamber from the injection hole of the injector that communicates with the processing chamber. (d) A calibration program for a substrate processing apparatus, which causes the control unit to perform the following steps: (d) acquire at least one of the waveform of the atmospheric pressure inside the processing chamber or the exhaust gas pressure inside the processing chamber acquired when the supply valve is open and supply is being performed, and the waveform of the filling pressure inside the storage unit acquired when the filling valve is closed and filling inside the storage unit is completed, and then change at least one of the timing for opening the supply valve and the opening time of the filling valve so that the difference between the acquired waveform or the filling pressure and the corresponding reference waveform or reference pressure becomes small.

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