Fixing implement, substrate processing device, substrate processing method, manufacturing method for semiconductor device, and program

Abstract

Provided is a fixing implement that is provided to the outer periphery of a processing container for processing a substrate, fixes a coil for generating a plasma inside the processing container, and comprises a first flow path in which a cooling fluid flows.

Description

Fixture, substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, and program

[0001] The present disclosure relates to a fixture, a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a program.

[0002] Conventionally, as an example of a substrate processing apparatus, a semiconductor manufacturing apparatus for manufacturing a semiconductor device is known. In such a substrate processing apparatus, as disclosed in Japanese Patent Laid-Open No. 2014-75579, a coil for generating plasma in the processing container is provided on the outer periphery of the processing container in which substrate processing is performed.

[0003] The coil as described above is fixed at a predetermined position to the processing container by a fixture, but there is a concern that the fixture may deform due to heat caused by plasma generation in the processing container and heat generation accompanying energization of the coil.

[0004] The present disclosure provides a technique capable of effectively cooling the fixture of a coil that is provided on the outer periphery of a processing container and generates plasma in the processing container.

[0005] According to one aspect of the present disclosure, there is provided a fixture that is provided on the outer periphery of a processing container for processing a substrate, fixes a coil that generates plasma in the processing container, and includes a first flow path through which a cooling fluid flows inside.

[0006] According to the present disclosure, the technique enables effective cooling of the fixture for the coil that is provided on the outer periphery of the processing container and generates plasma in the processing container.

[0007] This is a schematic configuration diagram showing a substrate processing apparatus according to one aspect of the present disclosure. This is a schematic diagram showing a cross-sectional view of a fixing device according to one aspect of the present disclosure. This is a cross-sectional view taken along line III-III in Figure 1. This is a control block diagram showing the control system of the controller of the substrate processing apparatus according to one aspect of the present disclosure. This is a flow diagram showing a substrate processing process according to one aspect of the present disclosure. This is a flow diagram showing a fixing device cooling process according to one aspect of the present disclosure. This is a schematic diagram showing a cross-sectional view of a fixing device according to a first modified example of the present disclosure. This is a schematic diagram showing a cross-sectional view of a fixing device according to a second modified example of the present disclosure. This is a schematic diagram showing a cross-sectional view of a fixing device according to a third modified example of the present disclosure. This is a cross-sectional view taken along line VIα-VIα in Figure 6C. This is a schematic diagram showing a cross-sectional view of a fixing device according to a fourth modified example of the present disclosure. This is a cross-sectional view taken along line VIβ-VIβ in Figure 6E. This is a schematic diagram showing a cross-sectional view of a fixing device according to a fifth modified example of the present disclosure. This is a cross-sectional view taken along line VIγ-VIγ in Figure 6G. This is a schematic diagram showing a cross-sectional view of a fixing device according to a sixth modified example of the present disclosure. This is a schematic diagram showing a cross-sectional view of a fixing device according to a seventh modified example of the present disclosure. This is a schematic diagram showing a cross-sectional view of a fixing device according to an eighth modified example of the present disclosure. This is a cross-sectional view taken along line VIδ-VIδ in Figure 6K.

[0008] Hereinafter, one aspect of this disclosure will be described with reference primarily to Figures 1 to 4. Note that the drawings used in the following description are all schematic. Furthermore, the dimensional relationships and ratios of the elements shown in the drawings do not necessarily correspond to those of reality. Moreover, the dimensional relationships and ratios of the elements do not necessarily correspond between multiple drawings. Also, common reference numerals in each figure refer to the same member or structure, even if not specifically mentioned in the description of each figure.

[0009] (1) Components of the Substrate Processing Apparatus The substrate processing apparatus 100, as shown in Figure 1, includes a processing furnace 202 for plasma processing a wafer 200 as a substrate. The processing furnace 202 is provided with a processing container 203 which constitutes a processing chamber 201. That is, the substrate processing apparatus 100 is configured to plasma process the wafer 200 inside the processing container 203. The processing container 203 includes a dome-shaped upper container 210 and a bowl-shaped lower container 211. Furthermore, the substrate processing apparatus 100 includes a base plate 248 which covers the upper end of the lower container 211 and has through holes formed in it.

[0010] The upper container 210 is placed over the lower container 211 to form the processing chamber 201. The upper container 210 is made of, for example, quartz (SiO ２ The lower container 211 is formed of, for example, aluminum (Al).

[0011] Furthermore, as shown in Figure 1, a gate valve 244 is provided on the lower side wall of the lower container 211. When the gate valve 244 is open, it is configured to allow wafers 200 to be loaded into the processing chamber 201 via the loading / unloading port 245 using a transport mechanism (not shown), or to load wafers 200 to the outside of the processing chamber 201. When the gate valve 244 is closed, it is configured to act as a gate valve to maintain the airtightness of the processing chamber 201.

[0012] The processing chamber 201 has a plasma generation space in which a coil 212 is provided as a resonant coil, and a substrate processing space which is in communication with the plasma generation space and in which the wafer 200 is processed. The plasma generation space is the space in which plasma is generated, and is the space in the processing chamber 201 that is above the lower end of the coil 212 and below the upper end of the coil 212. On the other hand, the substrate processing space is the space in which the wafer 200 is processed using plasma, and is the space below the lower end of the coil 212.

[0013] [Susceptor 217] The susceptor 217, which serves as a substrate mounting section on which the wafer 200 is placed, is located in the center of the bottom of the processing chamber 201, as shown in Figure 1.

[0014] A heater 217b, which serves as a heating mechanism, is integrally embedded inside the susceptor 217. A heater power adjustment mechanism 276 is connected to the heater 217b.

[0015] The susceptor 217 is electrically insulated from the lower container 211. An impedance adjustment electrode 217c is installed inside the susceptor 217. The impedance adjustment electrode 217c is grounded via an impedance variable mechanism 275, which acts as an impedance adjustment unit.

[0016] Furthermore, the susceptor 217 is provided with a susceptor lifting mechanism 268 that has a drive mechanism for raising and lowering the susceptor 217. In addition, the susceptor 217 is provided with a through hole 217a, and a wafer push-up pin 266 is provided on the bottom surface of the lower container 211. When the susceptor 217 is lowered by the susceptor lifting mechanism 268, the wafer push-up pin 266 is configured to pass through the through hole 217a without contacting the susceptor 217.

[0017] The substrate mounting section according to this embodiment is mainly composed of a susceptor 217 and a heater 217b.

[0018] [Gas supply unit 230] As shown in Figure 1, the gas supply unit 230 is located above the processing chamber 201. Specifically, a gas supply head 236 is provided above the processing chamber 201, that is, above the upper container 210. The gas supply head 236 comprises a cap-shaped lid 233, a gas inlet 234, a buffer chamber 237, an opening 238, a shielding plate 240, and a gas outlet 239, and is configured to supply each gas to the processing chamber 201.

[0019] A gas supply pipe 232 is connected to the gas inlet 234. The gas supply pipe 232 is connected so that the downstream end of the first gas supply pipe 232a, which supplies the first gas, the downstream end of the second gas supply pipe 232b, which supplies the second gas, and the inert gas supply pipe 232c, which supplies the inert gas, converge.

[0020] The first gas supply pipe 232a is provided with a mass flow controller (MFC) 252a as a flow rate control device and a valve 253a as an on / off valve, in that order from the upstream side. The second gas supply pipe 232b is provided with an MFC 252b and a valve 253b, in that order from the upstream side. The inert gas supply pipe 232c is provided with an MFC 252c and a valve 253c, in that order from the upstream side. Although not included in the substrate processing apparatus 100, a first gas supply source 250a is provided upstream of the MFC 252a in the first gas supply pipe 232a, a second gas supply source 250b is provided upstream of the MFC 252b in the second gas supply pipe 232b, and an inert gas supply source 250c is provided upstream of the MFC 252c in the inert gas supply pipe 232c.

[0021] A valve 243a is provided in the gas supply pipe 232. The gas supply unit 230 is configured to supply gas for processing the wafer 200 into the processing container 203.

[0022] The gas supply unit 230 (gas supply system) according to this embodiment mainly consists of a gas supply head 236 (cover 233, gas inlet 234, buffer chamber 237, opening 238, shielding plate 240 and gas outlet 239), a first gas supply pipe 232a, a second gas supply pipe 232b, an inert gas supply pipe 232c, MFCs 252a, 252b, 252c, and valves 253a, 253b, 253c, 243a. A first gas supply source 250a, a second gas supply source 250b and an inert gas supply source 250c may also be included in the gas supply unit 230.

[0023] [Exhaust section 228] A gas exhaust port 235 for exhausting gas from the processing chamber 201 is provided on the side wall of the lower container 211. The upstream end of the gas exhaust pipe 231 is connected to the gas exhaust port 235. The gas exhaust pipe 231 is equipped with, in order from the upstream side, an APC (Auto Pressure Controller) valve 242 as a pressure regulator (pressure adjustment section), a valve 243b as an on / off valve, and a vacuum pump 246 as a vacuum exhaust device.

[0024] The exhaust section 228 (exhaust system) according to this embodiment mainly consists of a gas exhaust port 235, a gas exhaust pipe 231, an APC valve 242, and a valve 243b. A vacuum pump 246 may also be included in the exhaust section 228.

[0025] [Plasma Generation Unit 216] As shown in Figure 1, the plasma generation unit 216 is mainly located on the outside of the outer wall of the upper container 210. Specifically, a spiral coil 212 is provided on the outer periphery of the processing chamber 201, that is, on the outside of the side wall of the upper container 210, so as to surround the processing chamber 201. In other words, the spiral coil 212 is provided so as to surround the processing container 203 from the radially outer side of the upper container 210 (i.e., the side away from the center of the upper container 210). The coil 212 is supported within the plasma generation unit 216 by a fixing device 218 that extends in the vertical direction. The fixing device 218 has a first flow path 219 that penetrates in the upper direction. The fixing device 218 will be described later.

[0026] Furthermore, the coil 212 is connected to an RF (Radio Frequency) sensor 272, a high-frequency power supply 273, and a matching unit 274 that matches the impedance and output frequency of the high-frequency power supply 273.

[0027] The high-frequency power supply 273 supplies high-frequency power (RF power) to the coil 212. The RF sensor 272 is located on the output side of the high-frequency power supply 273 and monitors information on the forward and reflected waves of the supplied high-frequency power. The reflected wave power monitored by the RF sensor 272 is input to the matching unit 274, and the matching unit 274 controls the impedance of the high-frequency power supply 273 and the frequency of the output high-frequency power so as to minimize the reflected wave based on the reflected wave information input from the RF sensor 272.

[0028] The high-frequency power supply 273 includes a power supply control means (control circuit) that includes a high-frequency oscillation circuit and a preamplifier for defining the oscillation frequency and output, and an amplifier (output circuit) for amplifying to a predetermined output. The power supply control means controls the amplifier based on preset output conditions regarding frequency and power via an operation panel. The amplifier supplies a constant high-frequency power to the coil 212 via a transmission line.

[0029] The coil 212 is configured such that its winding diameter, winding pitch, and number of turns resonate at a predetermined wavelength in order to form a standing wave of a specific wavelength. In other words, the electrical length of the coil 212 is configured to be an integer multiple (1, 2, ...) of one wavelength at a predetermined frequency of the high-frequency power supplied from the high-frequency power supply 273. In other words, the substrate processing apparatus 100 includes a high-frequency power supply 273 that supplies high-frequency power to the coil 212 having wavelengths that are integer multiples of the electrical length of the coil 212.

[0030] The materials used to make up the coil 212 include copper pipes, copper sheets, aluminum pipes, aluminum sheets, or polymer belts coated with copper or aluminum.

[0031] Both ends of the coil 212 are electrically grounded, and at least one end is grounded via a movable tap 213 to fine-tune the electrical length of the coil 212 during the initial setup of the device or when processing conditions are changed. Reference numeral 214 in Figure 1 indicates the other fixed ground. Furthermore, to fine-tune the impedance of the coil 212 during the initial setup of the device or when processing conditions are changed, a power supply section is formed between the grounded ends of the coil 212 by a movable tap 215.

[0032] The plasma generation unit 216 according to this embodiment is mainly composed of a coil 212, an RF sensor 272, and a matching unit 274. A high-frequency power supply 273 may also be included as part of the plasma generation unit 216.

[0033] [Shielding plate 223] As shown in Figure 1, the shielding plate 223 covers the coil 212 from the radial outside of the processing container 203, shielding the electric field generated by the coil 212, and is provided to form a capacitive component (C component) between itself and the coil 212, which is one of the components of a resonant circuit.

[0034] Specifically, the shielding plate 223 is formed using a conductive material such as an aluminum alloy. The lower end of the shielding plate 223 has a lower flange 227 that extends inward in the radial direction of the container, and is configured to be installed on the base plate 248.

[0035] [Fixing device 218] As shown in Figure 2, the fixing device 218, which extends vertically within the plasma generation unit 216, is provided on the outer circumference of the processing container 203 for processing the substrate (i.e., the wafer 200), and fixes the coil 212 for generating plasma inside the processing container 203, and is equipped with a first channel 219 through which a cooling fluid CF flows. Preferably, the fixing device 218 is made of a heat-resistant synthetic resin. That is, the fixing device 218, which is heated by the coil 212 as plasma is generated, is cooled by the cooling fluid CF flowing through the first channel 219 that penetrates vertically, thereby preventing deformation and damage of the fixing device 218 due to heat.

[0036] As shown in Figure 2, it is desirable that the fixing device 218 has a recess 218A on the surface facing the outer circumference of the processing container 203 for accommodating the coil 212. In other words, it is desirable that the fixing device 218 has a recess 218A on the surface facing the outer circumference of the processing container 203, and that the recess 218A is configured to accommodate the coil 212. By accommodating the coil 212 in the recess 218A of the fixing device 218, it is possible to prevent the coil 212 from shifting or moving.

[0037] In the fixing device 218, as shown in Figure 2, it is desirable that the first flow path 219 has an upper end 219b and a lower end 219a, and that the cooling fluid CF flows from the lower end 219a to the upper end 219b. Since the lower part of the processing container 203 is heated more, the lower part of the fixing device 218 is also likely to become the hottest. Therefore, by allowing the cooling fluid CF, which is at a lower temperature, to flow into the first flow path 219 from the lower end 219a first, it becomes possible to cool the fixing device 218 more efficiently.

[0038] In the fixing device 218, as shown in Figure 2, the first flow path 219 is positioned outside the coil 212. By positioning the first flow path 219 outside the coil 212, the influence on high-frequency characteristics when the first flow path 219 is positioned between the processing container 203 and the coil 212 can be reduced.

[0039] Figure 3 is a cross-sectional view taken along line III-III in Figure 1. As shown in this figure, multiple fixing devices 218 are provided in the circumferential direction of the coil 212 (five locations in the figure). It is desirable that there are three or more fixing devices 218 in the circumferential direction and that they are equally spaced in a plan view. By providing multiple fixing devices 218 in the circumferential direction of the coil 212, the coil 212 can be stably fixed. Furthermore, the fixing devices 218 are configured to fix the coil 212 to the surface facing the outer circumference of the processing container 203. By fixing the coil 212 to the surface facing the outer circumference of the processing container 203 in this way, it is possible to prevent the plasma generated by the coil 212 from being obstructed by the fixing devices 218.

[0040] The fastener 218 is preferably made of a non-metallic material so as not to be affected by high frequencies. Furthermore, it is even more preferable that the fastener 218 is made of a resin material containing fluorine, which has a low dielectric constant and is excellent as an electrical insulating material. In addition, to improve the strength of the fastener, it is even more preferable that the fastener 218 is made by further incorporating glass material.

[0041] As shown in FIG. 1, a cooling fluid supply pipe 281 for supplying a cooling fluid CF is connected to the lower end of the first flow path 219. The cooling fluid supply pipe 281 is provided with, in order from the upstream side, an MFC 282 as a flow rate control device and a valve 283 as an on-off valve. Further, a temperature sensor 284 connected to the fixture 218 and configured to measure the temperature of the fixture 218 is also provided. Based on the temperature measured by the temperature sensor 284, the MFC 282 adjusts the flow rate of the cooling fluid CF. Although not included in the substrate processing apparatus 100, a cooling fluid supply source 285 is provided on the upstream side of the MFC 282 in the cooling fluid supply pipe 281. The cooling fluid supply pipe 281, the MFC 282, the valve 283, and the temperature sensor 284 constitute a cooling fluid supply unit 280. Note that the cooling fluid supply source 285 may be included in the cooling fluid supply unit 280.

[0042] As the cooling fluid CF, various fluids can be used regardless of being gas or liquid, as long as the fluid has a cooling effect. An inert gas can be used as the cooling fluid CF. Examples of the inert gas include N ２ or rare gases such as He or Ar. By using the inert gas as the cooling fluid CF, it is possible to cool the fixture 218 while minimizing the influence on plasma generation. Note that a facility may be provided for circulating the inert gas that has finished cooling the fixture 218 back to the cooling fluid supply unit 280 from the upper end portion 219b of the first flow path 219. Further, a facility for cooling the inert gas in the middle of the circulation may be provided.

[0043] Air can also be used as the cooling fluid CF. By using air as the cooling fluid CF, it is possible to cool the fixture 218 while reducing the cost of the cooling fluid CF itself. In addition, the air that has finished cooling the fixture 218 may be discharged from the upper end portion 219b to the outside of the substrate processing apparatus 100 without any problem.

[0044] Further, water can be used as the cooling fluid CF. By using water as the cooling fluid CF, it is possible to efficiently cool the fixture 218 while reducing the cost of the cooling fluid CF itself. In addition, the water that has finished cooling the fixture 218 may be refluxed from the upper end 219b of the first flow path 219 to the lower end 219a of the first flow path 219, and equipment for cooling the water may be provided in the middle of the reflux path.

[0045] [Controller 221] As shown in FIG. 1, the controller 221 serving as a control unit is configured to control the APC valve 242, the valve 243b, and the vacuum pump 246 via the signal line A, the susceptor elevating mechanism 268 via the signal line B, and the heater power adjustment mechanism 276 and the impedance variable mechanism 275 via the signal line C. Further, the controller 221 is configured to control the gate valve 244 via the signal line D, the RF sensor 272, the high-frequency power supply 273 and the matcher 274 via the signal line E, the MFCs 252a to 252c and the valves 253a to 253c, 243a via the signal line F, and the MFC 282, the valve 283 and the temperature sensor 284 via the signal line G, respectively.

[0046] As shown in FIG. 4, the controller 221 is configured as a computer 220 including a CPU (Central Processing Unit) 221a, a RAM (Random Access Memory) 221b, a storage device 221c, and an I / O port 221d. The RAM 221b, the storage device 221c, and the I / O port 221d are configured to be capable of data exchange with the CPU 221a via an internal bus 221e. The controller 221 is connected to an input / output device 222 configured as, for example, a touch panel, a display, or the like.

[0047] Here, the input / output device 222 is configured such that processing conditions for processing the wafer 200, execution operations for substrate processing, and the like are input thereto. In addition, the input / output device 222 is configured to display the state of the substrate processing apparatus 100.

[0048] The storage device 221c is composed of, for example, flash memory, an HDD (Hard Disk Drive), etc. The storage device 221c contains, in a readable format, control programs that control the operation of the substrate processing device, process recipes that describe the procedures and conditions for substrate processing (described later), and recipe execution programs for executing the process recipes.

[0049] The recipe execution program is a combination of steps in the substrate processing process described later that cause the CPU 221a to execute and obtain predetermined results, and functions as a program. Hereinafter, this recipe execution program and control program will be collectively referred to simply as a program (program product). In this specification, the term "program" may include only the recipe execution program, only the control program, or both. The RAM 221b is configured as a memory area (work area) where programs and data read by the CPU 221a are temporarily held.

[0050] In this embodiment, the memory device 221c stores each processing condition. The processing condition includes at least one of the following: the temperature of the wafer 200 to be processed, the pressure of the processing chamber 201, the type of gas used to process the wafer 200, the flow rate of the gas used to process the wafer 200, and the power supplied to the coil 212.

[0051] The I / O port 221d is connected to the above-mentioned MFCs 252a to 252c, 282, valves 253a to 253c, 243a, 243b, 283, gate valve 244, APC valve 242, vacuum pump 246, RF sensor 272, high-frequency power supply 273, matching unit 274, susceptor lifting mechanism 268, heater power adjustment mechanism 276, impedance variable mechanism 275, and temperature sensor 284, etc.

[0052] The CPU 221a is configured to read and execute control programs from the storage device 221c, and to read process recipes from the storage device 221c in response to input of operation commands from the input / output device 222.

[0053] The CPU 221a is configured to control the opening adjustment operation of the APC valve 242, the opening and closing operation of valve 243b, and the starting and stopping of the vacuum pump 246 via I / O port 221d and signal line A, in accordance with the contents of the read process recipe. Furthermore, the CPU 221a is configured to control the raising and lowering operation of the susceptor lifting mechanism 268 via signal line B, the power supply adjustment operation (temperature adjustment operation) of the heater power adjustment mechanism 276 and impedance variable mechanism 275 to the heater 217b via signal line C, and the opening and closing operation of the gate valve 244 via signal line D. In addition, the CPU 221a is configured to control the operation of the RF sensor 272, matching unit 274 and high-frequency power supply 273 via signal line E, and the flow rate adjustment operation of various gases by MFCs 252a to 252c, and the opening and closing operation of valves 253a to 253c and 243a, etc. via signal line F. Furthermore, the CPU 221a is configured to control the flow rate adjustment operation of the cooling fluid CF by the MFC 282 and the opening and closing operation of the valve 283 in accordance with the temperature of the fixture 218 input by the temperature sensor 284 via the signal line G. As a result, the controller 221, which acts as the control unit, can control the flow rate adjustment of the cooling fluid CF so that the temperature of the fixture 218 falls below a predetermined threshold.

[0054] As described above, the substrate processing apparatus 100 of this embodiment comprises a processing container 203 for processing a wafer 200 as a substrate, a coil 212 provided on the outer circumference of the processing container 203 for generating plasma inside the processing container 203, and a fixing device 218 for fixing the coil 212 and having a first channel 219 through which a cooling fluid CF flows. With this configuration, the substrate processing apparatus 100 of this embodiment is provided with a first channel 219 for flowing the cooling fluid CF through the fixing device 218, thereby cooling the inside of the fixing device 218 and suppressing heating of the fixing device 218, thereby preventing deformation and damage of the fixing device 218 due to heat. Furthermore, it is desirable that the substrate processing apparatus 100 of this embodiment further comprises a controller 221 as a control unit that can control the flow rate of the cooling fluid CF so that the temperature of the fixing device 218 is lower than a predetermined threshold.

[0055] (2) Substrate Processing Method and Method for Manufacturing a Semiconductor Device Using the above-described substrate processing apparatus 100, an example of a sequence in which a film containing a predetermined element is formed on a wafer 200 as a substrate as one step in the substrate processing process of the manufacturing process of a semiconductor device (device) will be explained with reference to Figure 5A. In the following explanation, the operation of each part constituting the substrate processing apparatus 100 is controlled by the controller 221.

[0056] [Pressure adjustment in processing chamber 201] First, before starting the substrate processing process, the pressure in processing chamber 201, which is adjusted to atmospheric pressure, is adjusted to the same pressure as the adjacent vacuum transport chamber (not shown) by adjusting the opening of the APC valve 242. Then, steps S110 to S160 are carried out.

[0057] [Substrate loading process S110] In the substrate loading process S110, the wafer 200 is loaded into the processing chamber 201. Specifically, the susceptor lifting mechanism 268 lowers the susceptor 217 to the transport position of the wafer 200, and the wafer push-up pin 266 passes through the through hole 217a of the susceptor 217.

[0058] Next, the gate valve 244 is opened, and the wafer 200 is transported into the processing chamber 201 from the vacuum transport chamber adjacent to the processing chamber 201 using a wafer transport mechanism (not shown). The transported wafer 200 is supported in a horizontal position on the wafer push-up pins 266 that protrude from the surface of the susceptor 217. Once the wafer 200 has been transported into the processing chamber 201, the wafer transport mechanism retracts to the outside of the processing chamber 201, and the gate valve 244 is closed to seal the processing chamber 201. Then, the susceptor lifting mechanism 268 raises the susceptor 217, and the wafer 200 is supported on the upper surface of the susceptor 217.

[0059] [Heating and Vacuum Evacuation Process S120] In the heating and vacuum evacuation process S120, the wafer 200 brought into the processing chamber 201 is heated. The heater 217b is preheated, and the wafer 200 is heated by holding it on the susceptor 217 in which the heater 217b is embedded. Here, the wafer 200 is heated until it reaches the target temperature. While the wafer 200 is being heated, the vacuum pump 246 evacuates the processing chamber 201 via the gas exhaust pipe 231, and sets the pressure in the processing chamber 201 to a predetermined value. The vacuum pump 246 is kept running at least until the substrate removal process S160, described later, is completed.

[0060] [Reaction Gas Supply Process S130] In the reaction gas supply process S130, the supply of the first gas and the second gas as reaction gases is started. Specifically, valves 253a and 253b are opened, and the supply of the first gas and the second gas to the processing chamber 201 is started while controlling the flow rate with MFCs 252a and 252b.

[0061] Furthermore, the exhaust of the processing chamber 201 is controlled by adjusting the opening of the APC valve 242 so that the processing chamber 201 reaches the target pressure. In this way, the supply of the first gas and the second gas is continued until the end of the plasma processing step S140, which will be described later, while the processing chamber 201 is exhausted appropriately.

[0062] As the first gas, for example, an oxygen-containing gas can be used. As an oxygen-containing gas, for example, oxygen (O ２ ) Gas, etc. can be used.

[0063] As the second gas, for example, a hydrogen-containing gas can be used. Examples of hydrogen-containing gases include hydrogen (H ２ ) Gas, etc. can be used.

[0064] [Plasma Processing Process S140] After the pressure in the processing chamber 201 stabilizes, in the plasma processing process S140, high-frequency power is supplied to the coil 212 from the high-frequency power supply 273 via the RF sensor 272.

[0065] As a result, a high-frequency electric field is formed in the plasma generation space to which the first and second gases are supplied. This electric field excites a donut-shaped induced plasma with the highest plasma density at a height corresponding to the electrical midpoint of the coil 212 in the plasma generation space. The plasma-like first and second gases are plasma-excited and dissociated, generating reactive species such as radicals (active species) and ions of the elements contained in the first and second gases. Specifically, for example, reactive species such as oxygen radicals (oxygen active species) and oxygen ions containing oxygen, and hydrogen radicals (hydrogen active species) and hydrogen ions containing hydrogen are generated.

[0066] Then, radicals and ions generated by the inductive plasma are supplied to trenches on the surface of the wafer 200, which is held on the susceptor 217 in the substrate processing space. The supplied radicals and ions react with the sidewalls of the trenches, and the surface layer is modified. Specifically, for example, the silicon layer on the surface is modified into a silicon oxide layer.

[0067] After a predetermined processing time has elapsed, the power supply from the high-frequency power supply 273 is stopped, and the plasma discharge in the processing chamber 201 is stopped. In addition, valves 253a and 253b are closed, and the supply of the first gas and the second gas to the processing chamber 201 is stopped. With this, the plasma processing process S140 is completed.

[0068] [Vacuum Evacuation Process S150] After stopping the supply of the first and second gases, in the vacuum evacuation process S150, the processing chamber 201 is evacuated via the gas exhaust pipe 231. This exhausts the first and second gases, as well as the exhaust gases generated by the reaction of these gases, to the outside of the processing chamber 201. Subsequently, the opening of the APC valve 242 is adjusted so that the pressure in the processing chamber 201 is the same as the pressure in the vacuum transport chamber adjacent to the processing chamber 201 (the destination for the wafer 200; not shown).

[0069] [Substrate Removal Process S160] After the processing chamber 201 reaches a predetermined pressure, in the substrate removal process S160, the susceptor 217 descends to the wafer 200 transport position, and the wafer 200 is supported on the wafer push-up pin 266. Then, the gate valve 244 is opened, and the wafer 200 is removed from the processing chamber 201 using the wafer transport mechanism. With this, the substrate processing process according to this embodiment is completed.

[0070] [Maintenance Process] After the substrate processing process has been performed multiple times, the substrate processing apparatus 100 is maintained. At this time, the opening degree of the APC valve 242 is adjusted so that the pressure inside the processing chamber 201 is equal to atmospheric pressure.

[0071] [Fixture Cooling Process] During the substrate processing process described above, the fixture 218 that fixes the coil 212 is heated mainly by the supply of high-frequency power to the coil 212 and the heat emitted from the heated processing container 203. The cooling process for this heated fixture 218 will be explained using Figure 5B. In the following explanation, the operation of each part constituting the substrate processing apparatus 100 is controlled by the controller 221.

[0072] First, in the process shown in S210, it is confirmed that the substrate processing process shown in Figure 5A has started. Then, in the process shown in S220, if the substrate processing process shown in Figure 5A has not been completed, in the process shown in S230, the CPU 221a determines whether the temperature of the fixing device 218 detected by the temperature sensor 284 is below a threshold.

[0073] If the temperature of the fixing device 218 is below the threshold, in the step shown in S240, the CPU 221a controls the MFC 282 and the valve 283 to stop the flow of the cooling fluid CF to the first flow path 219. After this, returning to the step shown in S220, if the substrate processing step shown in Figure 5A has not been completed, it is determined again in the step shown in S230 whether the temperature of the fixing device 218 is below the threshold.

[0074] On the other hand, if the temperature of the fixing device 218 exceeds the threshold, in the step shown in S250, the CPU 221a controls the MFC 282 and the valve 283 to cause the cooling fluid CF to flow into the first flow path 219. After this, returning to the step shown in S220, if the substrate processing step shown in Figure 5A has not been completed, it is determined again in the step shown in S230 whether the temperature of the fixing device 218 is below the threshold.

[0075] Furthermore, in the process shown in S220, if the substrate processing process shown in Figure 5A has not been completed, the cooling fluid CF may be allowed to flow continuously without determining a threshold. On the other hand, in the process shown in S220, if the substrate processing process shown in Figure 5A has been completed, the flow of the cooling fluid CF may be stopped. By using such processing methods, the processing time can be reduced and the processing load can be alleviated.

[0076] [Substrate Processing Method] As described above, the substrate processing method of this embodiment includes the steps of supplying the cooling fluid CF to the first channel 219 of a fixing device 218, which is provided on the outer circumference of a processing container 203 for processing a wafer 200 as a substrate and has a coil 212 for generating plasma fixed inside the processing container 203, and has a first channel 219 through which a cooling fluid CF flows; and the steps of generating plasma inside the processing container 203 to process the wafer 200 as a substrate. With this configuration, the substrate processing method of this embodiment is provided with a first channel 219 for flowing the cooling fluid CF in the fixing device 218, and by cooling the inside of the fixing device 218 during the substrate processing process by the substrate processing apparatus 100, it is possible to suppress heating of the fixing device 218 and prevent deformation and damage of the fixing device 218 due to heat.

[0077] [Method for Manufacturing a Semiconductor Device] As described above, the method for manufacturing a semiconductor device according to this embodiment includes the steps of supplying cooling fluid CF to the first channel 219 of a fixing device 218, which is provided on the outer periphery of a processing container 203 for processing a wafer 200 as a substrate, and fixing a coil 212 for generating plasma inside the processing container 203, and having a first channel 219 through which cooling fluid CF flows inside the fixing device 218, and processing the wafer 200 as a substrate by generating plasma inside the processing container 203. With this configuration, the method for manufacturing a semiconductor device according to this embodiment provides a first channel 219 for flowing cooling fluid CF through the fixing device 218, and by cooling the inside of the fixing device 218 during the substrate processing process by the substrate processing device 100, it is possible to suppress heating of the fixing device 218 and prevent deformation and damage of the fixing device 218 due to heat.

[0078] (3) The program controller 221 can be configured by installing the above-mentioned program stored in an external storage device (for example, magnetic tape, magnetic disks such as flexible disks and hard disks, optical disks such as CDs and DVDs, magneto-optical disks such as MOs, semiconductor memory such as USB memory and memory cards) 224 into the computer 220. The storage device 221c and the external storage device 224 are configured as recording media that can be read by the computer 220. Hereinafter, these will be collectively referred to simply as recording media. In this specification, when the term recording media is used, it may include only the storage device 221c, only the external storage device 224, or both. The program may be provided to the computer 220 using communication means such as the Internet or a dedicated line, without using the external storage device 224, and the program provided by communication means such as the Internet or a dedicated line may be stored in a recording media and used.

[0079] In this embodiment, the above program is a program that causes the substrate processing apparatus 100 to execute the following steps via a computer 220: supplying the cooling fluid CF to the first channel 219 of a fixing device 218, which is provided on the outer periphery of a processing container 203 for processing a wafer 200 as a substrate and has a coil 212 for generating plasma fixed inside the processing container 203, and having a first channel 219 through which the cooling fluid CF flows; and generating plasma inside the processing container 203 to process the wafer 200 as a substrate. With this configuration, the substrate processing apparatus 100 controlled by the computer 220 that processes the program in this embodiment has a first channel 219 through which the cooling fluid CF flows in the fixing device 218, and by cooling the inside of the fixing device 218 during the substrate processing process, it is possible to suppress heating of the fixing device 218 and prevent deformation and damage of the fixing device 218 due to heat. This program may be stored and used on the recording medium described above.

[0080] (4) Figure 6A of the first modified example is a cross-sectional view showing the first modified example of the fixing device 218 of the present disclosure. In the fixing device 218 of this modified example, the lower end portion 219a, which is the inlet of the first flow path 219, and the upper end portion 219b, which is the outlet, are both positioned outward from the fixing device 218. In this modified example, either a liquid or a gas can be used as the cooling fluid CF. In this modified example as well, the same effects as those described in (1) to (3) above can be obtained. Furthermore, in this modified example, the outside of the fixing device 218 can also be cooled.

[0081] (5) Figure 6B of the second modified example shows a cross-sectional view of a second modified example of the fixing device 218 of the present disclosure. In the fixing device 218 of this modified example, a second flow path 219A, which branches from the first flow path 219 toward the outer circumference of the processing container 203, is also arranged between each of the coils 212, which are provided to be wound multiple times along the outer circumference of the processing container 203. In other words, the second flow path 219A is also arranged at a position in the vertical direction different from the recess 218A in which the coils 212 are housed. In this modified example, either a liquid or a gas can be used as the cooling fluid CF. In this modified example as well, the same effects as those described in (1) to (3) above can be obtained. Furthermore, in this modified example, by providing a second flow path 219A between the recess 218A in which the coils 212 are housed in the fixing device 218, the vicinity of the coils 212 of the fixing device 218 can be effectively cooled.

[0082] (6) Third Modification Figure 6C is a cross-sectional view showing a third modification of the fixing device 218 of the present disclosure. Figure 6D is a cross-sectional view taken along VIα-VIα as shown in Figure 6C. In this modification, similar to the second modification in (5) above, a second flow path 219A is provided that branches off from the first flow path 219 toward the outer circumference of the processing container 203. In addition, a third flow path 219B is provided that branches off from the first flow path 219 and allows the cooling fluid CF to flow toward the circumferential direction of the processing container 203. Furthermore, a fourth flow path 219C is provided that branches off from the first flow path 219 and allows the cooling fluid CF to flow toward the opposite side of the outer circumference of the processing container 203. In this modification, both liquid and gaseous materials can be used as the cooling fluid CF.

[0083] In this modified example, the same effects as those described in (1) to (3) and (5) above can be obtained. Furthermore, in this modified example, by providing a third flow path 219B in the direction of the side surface of the recess 218A where the coil 212 of the fixing device 218 is fixed (i.e., in the direction of the side surface of the fixing device 218), the side portion of the fixing device 218 can also be cooled. Furthermore, by providing a fourth flow path 219C in the direction opposite to the direction in which the recess 218A where the coil 212 of the fixing device 218 is fixed is located, the entire fixing device 218 can be effectively cooled.

[0084] (7) Figure 6E, a fourth modified example, is a cross-sectional view showing a fourth modified example of the fixing device 218 of the present disclosure. Figure 6F is a cross-sectional view taken along VIβ-VIβ as shown in Figure 6E. In this modified example, the second flow path 219A in the second modified example described in (5) penetrates towards the processing container 203. In this modified example, only gas can be used as the cooling fluid CF. In this modified example, the same effects as those described in (1) to (3) and (5) above can be obtained. Furthermore, in this modified example, not only the fixing device 218 but also the outer circumference of the processing container 203 can be cooled.

[0085] (8) Fifth Modification Figure 6G is a cross-sectional view showing a fifth modification of the fixing device 218 of the present disclosure. Figure 6H is a cross-sectional view taken along VIγ-VIγ shown in Figure 6G. In this modification, similar to the third modification in (3) above, a second flow path 219A is provided that branches from the first flow path 219 toward the outer circumference of the processing container 203, a third flow path 219B is provided that branches toward the circumferential direction of the processing container 203, and a fourth flow path 219C is provided that branches toward the opposite side of the outer circumference of the processing container 203. In addition, the second flow path 219A, the third flow path 219B, and the fourth flow path 219C are all open to the outside of the fixing device 218. In this modification, only gas can be used as the cooling fluid CF. In this modification as well, the same effects as those described in (1) to (3), (5) and (6) above can be obtained. Furthermore, in this modification, the space around the fixing device 218 can also be cooled.

[0086] (9) Figure 6I of the sixth modified example is a cross-sectional view showing a sixth modified example of the fixing device 218 of the present disclosure. In this modified example, a coil retainer 218B is provided to hold down the coil 212 housed in the recess 218A of the fixing device 218. The coil retainer 218B is fixed to the fixing device 218 by a screw 218C. The flow path 219D for the cooling fluid CF is provided between the processing container 203 and the fixing device 218. Multiple through holes 219E are opened in the flow path 219D to supply the cooling fluid CF toward the coil retainer 218B. The cooling fluid CF flowing out from the through holes 219E cools the fixing device 218 via the screw 218C of the coil retainer 218B. In this modified example, only gas can be used as the cooling fluid CF. In this modified example as well, the same effects as those described in (1) to (3) and (5) above can be obtained. In this modified example, the coil 212 is further securely fixed by the fixing device 218.

[0087] (10) Figure 6J of the seventh modified example is a cross-sectional view showing a seventh modified example of the fixing device 218 of the present disclosure. In this modified example, in addition to the embodiment of the sixth modified example described in (9) above, a first flow path 219 is provided that penetrates the fixing device 218 vertically, similar to the embodiment shown in Figure 2. In this modified example, only gas can be used as the cooling fluid CF. In this modified example as well, the same effects as those described in (1) to (3), (5) and (9) above can be obtained, and the cooling effect of the fixing device 218 is further improved.

[0088] (11) Figure 6K of the eighth modified example is a cross-sectional view showing the eighth modified example of the fixing device 218 of the present disclosure. Figure 6L is a cross-sectional view taken along the line VIδ-VIδ shown in Figure 6K. In this modified example, in addition to the embodiment of the fifth modified example described in (8) above, a coil retainer 218B is provided that covers the processing container 203 side of the fixing device 218. The coil retainer 218B is fixed to the fixing device 218 with screws 218C at two locations, near the upper end and near the lower end. Furthermore, small pieces 218D that contact each individual coil 212 are extended from the coil retainer 218B toward the fixing device 218. In this modified example, only gas can be used as the cooling fluid CF.

[0089] In this modified example, the same effects as those described in (1) to (3), (5) and (8) to (10) above can be obtained. Furthermore, in this modified example, the cooling fluid CF can also be flowed into the space provided between the coil retainer 218B and the fixing device 218, making it possible to cool not only the entire circumference of the fixing device 218 but also the coil retainer 218.

[0090] (12) Others Although specific embodiments have been described in detail in the above embodiments, this disclosure is not limited to such embodiments, and it will be apparent to those skilled in the art that various other embodiments are possible within the scope of this disclosure. Furthermore, according to the above embodiments, one or more of the effects described above can be obtained.

[0091] Furthermore, although not specifically explained in the above embodiments, unless otherwise specified in the specification, each element is not limited to one, but may be present in multiple forms.

[0092] Furthermore, the above embodiments described an example of forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at a time. This disclosure is not limited to the above embodiments and can be suitably applied, for example, when forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time. Furthermore, the above embodiments described an example of forming a film using a substrate processing apparatus having a cold-wall type processing furnace. This disclosure is not limited to the above embodiments and can be suitably applied when forming a film using a substrate processing apparatus having a hot-wall type processing furnace.

[0093] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and conditions as described above, and the same effects as described above can be obtained.

[0094] The above-described embodiments and modifications can be used in combination as appropriate. The processing procedure and processing conditions in this case can be the same as, for example, the processing procedure and processing conditions of the above-described embodiments and modifications.

Claims

1. A fixing device provided on the outer circumference of a processing container for processing substrates, which fixes a coil for generating plasma inside the processing container and has a first channel through which a cooling fluid flows.

2. The fixing device according to claim 1, wherein the surface of the processing container facing the outer circumference is provided with a recess for accommodating the coil.

3. The fixing device according to claim 1, wherein the first flow path comprises an upper end and a lower end, and the cooling fluid is configured to flow from the lower end to the upper end.

4. The fixing device according to claim 1, wherein the first flow path is located outside the coil.

5. A substrate processing apparatus comprising: a processing container for processing a substrate; a coil provided on the outer circumference of the processing container for generating plasma inside the processing container; and a fixing device for fixing the coil and having a first channel through which a cooling fluid flows.

6. The substrate processing apparatus according to claim 5, wherein the cooling fluid is an inert gas.

7. The substrate processing apparatus according to claim 5, wherein the cooling fluid is air.

8. The substrate processing apparatus according to claim 5, wherein the cooling fluid is water.

9. The substrate processing apparatus according to claim 5, wherein the fixing device has a recess on a surface facing the outer circumference of the processing container, and the recess is configured to accommodate the coil.

10. The substrate processing apparatus according to claim 5, wherein a plurality of the fixing devices are provided in the circumferential direction of the coil.

11. The substrate processing apparatus according to claim 5, wherein the fixing device is configured to fix the coil to a surface facing the outer circumference of the processing container.

12. The substrate processing apparatus according to claim 5, wherein the fixing device is made of a nonmetallic material.

13. The substrate processing apparatus according to claim 12, wherein the fixing device is made of a resin material containing fluorine.

14. The substrate processing apparatus according to claim 12 or 13, wherein the fixing device further comprises a glass material.

15. The substrate processing apparatus according to claim 9, wherein the fixing device is provided with a second flow path that branches off from the first flow path and flows toward the outer circumference of the processing container, and the second flow path is configured to be located at a position different in the vertical direction from the recess.

16. The substrate processing apparatus according to claim 5, wherein the coil is provided so as to be wound multiple times along the outer circumference of the processing container, the fixing device is provided with a second flow path that branches off from the first flow path and flows toward the outer circumference of the processing container, and the second flow path is configured to be positioned between the coils.

17. The substrate processing apparatus according to claim 15 or 16, wherein the fixing device is provided with a third flow path that branches off from the first flow path and flows the cooling fluid toward the circumferential direction of the processing container.

18. The substrate processing apparatus according to claim 17, wherein the fixing device is provided with a fourth flow path that branches off from the first flow path and directs the cooling fluid toward the opposite side of the outer circumference of the processing container.

19. The substrate processing apparatus according to claim 5, further comprising a control unit configured to control the flow rate of the cooling fluid so that the temperature of the fixing device falls below a predetermined threshold.

20. A substrate processing method comprising: a step of supplying a cooling fluid to a first channel of a fixing device provided on the outer circumference of a processing container for processing a substrate, the fixing device having a coil for generating plasma inside the processing container and a first channel through which a cooling fluid flows; and a step of generating plasma inside the processing container to process the substrate.

21. A method for manufacturing a semiconductor device, comprising the steps of: supplying a cooling fluid to a first channel of a fixing device provided on the outer periphery of a processing container for processing a substrate, the fixing device having a coil for generating plasma inside the processing container and a first channel through which a cooling fluid flows; and generating plasma inside the processing container to process the substrate.

22. A program that causes a substrate processing apparatus to perform the following steps via a computer: a procedure to supply cooling fluid to a first channel of a fixing device provided on the outer circumference of a processing container for processing a substrate, the fixing device having a coil for generating plasma inside the processing container and a first channel through which cooling fluid flows; and a procedure to generate plasma inside the processing container and process the substrate.

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