Method for producing magnetic sensor

Abstract

Provided is a method for producing a magnetic sensor 1, the magnetic sensor 1 comprising: a magnetic detection element (e.g., a magnetoresistive element 10a) which includes a magnetosensitive part (e.g., a free magnetic layer 13 of the magnetoresistive element 10a) having a sensitivity axis along a first direction and showing magnetic anisotropy along a second direction different from the first direction; and a magnetic-anisotropy control part 60 which includes a portion made of an antiferromagnetic material and magnetically links to the magnetosensitive part. The magnetic-anisotropy control part 60, due to a spin-orbit torque generated by voltage application, shows magnetic anisotropy along the second direction in at least a portion thereof. In the method, first annealing is conducted by heating while a voltage is applied to the magnetic-anisotropy control part 60. As a result, the magnetosensitive part shows magnetic anisotropy along the second direction due to an exchange coupling interaction involving the portion made of the antiferromagnetic material. The method thereby enables inducing the magnetic anisotropy of the magnetosensitive part in a given direction (the second direction) without applying an external magnetic field.

Description

Method for manufacturing magnetic sensor

[0001] The present invention relates to a method for manufacturing a magnetic sensor.

[0002] Examples of magnetic sensors that detect and measure magnetic fields include magnetic sensing elements provided with magnetoresistive effect elements using the GMR (Giant Magnetoresistive) effect or TMR (Tunneling Magnetoresistive) effect, and magnetic sensing elements composed of Hall elements.

[0003] When manufacturing a magnetic sensing element, a process of aligning the magnetic anisotropy of the members constituting the element in a predetermined direction may be performed. Specific examples of such a process include film formation in a magnetic field disclosed in Patent Document 1 (for example, Claim 7) and annealing in a magnetic field disclosed in Patent Document 2 (for example, Claim 5).

[0004] Japanese Unexamined Patent Publication No. 9-92904, Japanese Unexamined Patent Publication No. 11-96519

[0005] In these processes, an external magnetic field is applied to the entire member during the manufacturing process, and the film formation step and annealing step are performed in that state. For this reason, the externally applied magnetic field (external magnetic field) may adversely affect members other than the target member during the manufacturing process. For example, each magnetoresistive effect element has a free magnetic layer and a magnetization fixed layer both containing a magnetic material, and in general, the magnetization direction of the magnetization fixed layer is fixed to a predetermined direction during the manufacturing process of the magnetoresistive effect element. In this specification, setting the magnetization of the magnetization fixed layer to a level that does not change even when receiving a measurement magnetic field is referred to as "fixing". On the other hand, a bias magnetic field may be applied to the free magnetic layer in a direction orthogonal to the magnetization direction of the magnetization fixed layer to reduce measurement hysteresis. Since the magnetization of the magnetization fixed layer and the bias magnetic field are orthogonal to each other, when an external magnetic field is applied to align the magnetization (magnetic anisotropy) of one member along a predetermined direction, the degree of magnetization dispersion of the other member increases (the component of magnetization in a direction different from the set magnetization increases), and there is a concern that the performance as a magnetic sensing element will deteriorate.

[0006] An object of the present invention is to provide a method for manufacturing a high-precision magnetic sensor by including a process of aligning the magnetization (magnetic anisotropy) of a member along a predetermined direction without applying an external magnetic field.

[0007] In one embodiment, the present invention provides a method for manufacturing a magnetic sensor, comprising: a magnetic sensing element having a magnetosensitive portion whose sensitivity axis aligns along a first direction and whose magnetic anisotropy aligns along a second direction different from the first direction; and a magnetic anisotropy control unit having a portion made of an antiferromagnetic material and magnetically coupled to the magnetosensitive portion, wherein the magnetic anisotropy control unit has at least a portion of its magnetic anisotropy aligning along the second direction based on a spin-orbit torque generated by energizing, and characterized in that a first annealing is performed by heating the magnetic anisotropy control unit while energizing is applied, thereby causing the magnetic anisotropy of the magnetosensitive portion to align with the second direction based on an exchange coupling interaction involving the portion made of an antiferromagnetic material.

[0008] By performing the first annealing while the magnetic anisotropy control unit is energized, it is possible to align the magnetic anisotropy of the magnetosensitive part to a specific direction (hereinafter also referred to as "bias magnetic field application") in a method different from conventional magnetic field deposition or magnetic field annealing.

[0009] In the above manufacturing method, the magnetic sensing element may be a magnetoresistive element having a laminated structure of a free magnetic layer that forms the magnetosensitive portion, a non-magnetic layer, and a magnetization-fixed layer.

[0010] In the above manufacturing method, the first annealing may be performed after fixing the magnetization of the magnetization fixed layer. A magnetoresistive element has a magnetization fixed layer in which the magnetization is fixed in a predetermined direction, and the process of fixing the magnetization of the magnetization fixed layer (fixing process) may affect each other with the process of applying a bias magnetic field to the free magnetic layer (bias magnetic field application process). Specifically, for example, in the manufacturing process, if the fixing process is performed first, there is a concern that the degree of dispersion of the fixed magnetization in the magnetization fixed layer will increase due to the subsequent bias magnetic field application process to the free magnetic layer. Alternatively, conversely, if the fixing process is performed after the bias magnetic field application process, there is a concern that the degree of dispersion of magnetization along the direction of the bias magnetic field in the free magnetic layer will increase.

[0011] In the first annealing process described above, an external magnetic field is not applied to the entire component during the manufacturing process, unlike, for example, annealing in a magnetic field. Therefore, in the bias magnetic field application process, no external magnetic field is applied to components other than the free magnetic layer, specifically the magnetization fixed layer. Consequently, even if the first annealing is performed after the fixing process, it is possible to avoid the problem of increased magnetization dispersion in the magnetization fixed layer as described above.

[0012] In the above manufacturing method, after the first annealing, the magnetization of the magnetization fixed layer may be fixed while energizing the magnetic anisotropy control unit. In this manufacturing method, an external magnetic field may be applied (annealing in a magnetic field, film deposition in a magnetic field) in the fixing process performed after the bias magnetic field application process. By energizing the magnetic anisotropy control unit when applying an external magnetic field in the fixing process, the magnetic anisotropy control unit can maintain magnetization anisotropy in a direction different from the external magnetic field, thereby keeping magnetization dispersion low. Furthermore, since the free magnetic layer, which is the magnetosensitive part, is magnetically coupled with the magnetic anisotropy control unit, low magnetization dispersion of the magnetic anisotropy control unit also means that the magnetization dispersion of the magnetosensitive part is kept low. This manufacturing method is particularly advantageous when used in the manufacture of a top-pin structure (where the magnetization fixed layer is distal to the substrate than the free magnetic layer, and the magnetization fixed layer is laminated relatively later), but it may also be used in the manufacture of a bottom-pin structure (where the magnetization fixed layer is proximal to the substrate than the free magnetic layer, and the free magnetic layer is laminated relatively later).

[0013] In the above manufacturing method, the magnetization of the magnetization fixed layer may be fixed after the magnetization fixed layer is formed (annealing in a magnetic field), or it may be fixed while the magnetization fixed layer is being formed (film formation in a magnetic field).

[0014] In the above manufacturing method, the magnetic sensing element may be a Hall element. In this case, the entire Hall element becomes the magnetic sensing part.

[0015] In the above manufacturing method, the magnetic anisotropy control unit may include a spin Hall portion that generates the spin-orbit torque by energizing, and a magnetic bias portion that has at least a portion made of the antiferromagnetic material on the side facing the magnetic sensing portion, and whose magnetic anisotropy is aligned in the second direction based on the generated spin-orbit torque. By including a member whose primary purpose is to generate the spin-orbit torque and a member whose magnetic anisotropy changes in response to the spin-orbit torque, the degree of design freedom for the structure and process of the magnetic anisotropy control unit may be increased.

[0016] In the above manufacturing method, the magnetic bias portion may be made of the antiferromagnetic material.

[0017] In the above manufacturing method, the magnetic anisotropy control unit may consist of a single layer.

[0018] In the above manufacturing method, a magnetic layer may be provided between the magnetic anisotropy control unit and the magnetosensitive unit, which is magnetically coupled to both the magnetic anisotropy control unit and the magnetosensitive unit. Providing a magnetic layer may increase the design freedom of the structure and process of the magnetic anisotropy control unit and / or magnetosensitive unit.

[0019] According to the present invention, it is possible to align the magnetic anisotropy of the magnetosensitive part to a predetermined direction (second direction) without applying an external magnetic field.

[0020] This is a block diagram of a magnetic sensor according to one embodiment of the present invention. This is an explanatory diagram of a full-bridge circuit provided in the magnetic sensor according to the first embodiment of the present invention. This is a diagram illustrating an example of an individual magnetic field detection unit (top-pin structure) provided in the magnetic sensor according to the first embodiment of the present invention. This is a flowchart illustrating a method for manufacturing an example of an individual magnetic field detection unit (top-pin structure) of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (1) of a method for manufacturing an example of an individual magnetic field detection unit (top-pin structure) of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (2) of a method for manufacturing an example of an individual magnetic field detection unit (top-pin structure) of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (3) of a method for manufacturing an example of an individual magnetic field detection unit (top-pin structure) of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (4) of a method for manufacturing an example of an individual magnetic field detection unit (top-pin structure) of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (5) of a method for manufacturing an example of an individual magnetic field detection unit (top-pin structure) of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (6) of a method for manufacturing an example of an individual magnetic field detection unit (top-pin structure) of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (7) of a method for manufacturing an example of an individual magnetic field detection unit (top-pin structure) of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 8) of the manufacturing method for an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 9) of the manufacturing method for an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the first embodiment of the present invention. This is a flowchart showing one modified example of the manufacturing method for an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the first embodiment of the present invention. This is a flowchart showing another modified example of the manufacturing method for an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the first embodiment of the present invention. This is a diagram illustrating another example (bottom pin structure) of an individual magnetic field detection unit provided in a magnetic sensor according to the first embodiment of the present invention. This is a flowchart showing the manufacturing method for another example (bottom pin structure) of an individual magnetic field detection unit of a magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 1) of the manufacturing method for another example (bottom pin structure) of an individual magnetic field detection unit of a magnetic sensor according to the first embodiment of the present invention.This is an explanatory diagram (part 2) of the manufacturing method for another example (bottom pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 3) of the manufacturing method for another example (bottom pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 4) of the manufacturing method for another example (bottom pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 5) of the manufacturing method for another example (bottom pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 6) of the manufacturing method for another example (bottom pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 7) of the manufacturing method for another example (bottom pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 1) of another example of the manufacturing method for an example (top pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 2) of another example of the manufacturing method for an example (top pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram (part 3) of another example of a method for manufacturing an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the first embodiment of the present invention. This is an explanatory diagram of a full bridge circuit provided in a magnetic sensor according to the second embodiment of the present invention. This is a diagram illustrating an example of an individual magnetic field detection unit (top pin structure, magnetic field applied in the Y direction when forming the magnetic anisotropy control unit) provided in a magnetic sensor according to the second embodiment of the present invention. This is a diagram illustrating another example of an individual magnetic field detection unit (top pin structure, magnetic field applied in the Z direction when forming the magnetic anisotropy control unit) provided in a magnetic sensor according to the second embodiment of the present invention. This is an explanatory diagram of a full bridge circuit provided in a magnetic sensor according to the third embodiment of the present invention. This is a diagram illustrating an example of an individual magnetic field detection unit (top pin structure) provided in a magnetic sensor according to the third embodiment of the present invention. This is an explanatory diagram (part 1) of a method for manufacturing an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the third embodiment of the present invention. This is an explanatory diagram (part 2) of a method for manufacturing an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the third embodiment of the present invention. This is an explanatory diagram (part 3) of a method for manufacturing an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the third embodiment of the present invention.This is a diagram illustrating an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the Z direction) included in a magnetic sensor according to the fourth embodiment of the present invention. This is a flowchart illustrating the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the Z direction) of a magnetic sensor according to the fourth embodiment of the present invention. This is an explanatory diagram (1) of the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the Z direction) of a magnetic sensor according to the fourth embodiment of the present invention. This is an explanatory diagram (2) of the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the Z direction) of a magnetic sensor according to the fourth embodiment of the present invention. This is a diagram illustrating another example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the Z direction) included in a magnetic sensor according to the fourth embodiment of the present invention. This is a diagram illustrating an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the X direction) included in a magnetic sensor according to the fifth embodiment of the present invention. This is an explanatory diagram (1) of the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the X direction) of a magnetic sensor according to the fifth embodiment of the present invention. This is an explanatory diagram (2) of the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the X direction) of a magnetic sensor according to the fifth embodiment of the present invention. This is a diagram illustrating another example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the X direction) included in a magnetic sensor according to the fifth embodiment of the present invention. This is a diagram illustrating another example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the X direction) included in a magnetic sensor according to the sixth embodiment of the present invention. This is an explanatory diagram (part 1) of the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the X direction) of a magnetic sensor according to the sixth embodiment of the present invention. This is an explanatory diagram (part 2) of the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the X direction) of a magnetic sensor according to the sixth embodiment of the present invention. This is a diagram illustrating another example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the X direction) included in a magnetic sensor according to the sixth embodiment of the present invention.

[0021] Embodiments of the present invention will be described below with reference to the accompanying drawings. In each drawing, the same component is given the same number, and its description is omitted. Reference coordinates are shown in each figure as appropriate to indicate the positional relationship of each component. The reference coordinates are defined by three mutually orthogonal directions (X direction, Y direction, Z direction), and the orientation of each direction is expressed as X1 direction (X direction X1 direction). In this specification, the direction in which the measurement magnetic field H is applied may be referred to as the "first direction," the direction of magnetic anisotropy when the magnetic sensing part is not subjected to the measurement magnetic field H, which is orthogonal to the first direction, may be referred to as the "second direction," and the direction orthogonal to the first and second directions may be referred to as the "third direction."

[0022] (First Embodiment) Figure 1 is a block diagram of a magnetic sensor according to one embodiment of the present invention. Figure 2 is an explanatory diagram of the full-bridge circuit included in the magnetic sensor according to the first embodiment of the present invention. The magnetic sensor 1 of this embodiment includes a magnetic field detection unit 2, a power supply unit 3, a magnetic field calculation unit 4 and an amplifier 5, an analog-to-digital conversion circuit (A / D conversion circuit 6) and a control unit 7. The control unit 7 controls each part that constitutes the magnetic sensor 1 and is configured as a CPU (central processing unit) and a program, etc.

[0023] The magnetic field detection unit 2 detects the external magnetic field to be measured (measured magnetic field H), and as shown in Figure 2, it has four individual magnetic field detection units 100a, 100b, 100c, and 100d. Individual magnetic field detection unit 100a has a magnetoresistive element 10a as a magnetic detection element, individual magnetic field detection unit 100b has a magnetoresistive element 10b as a magnetic detection element, individual magnetic field detection unit 100c has a magnetoresistive element 10c as a magnetic detection element, and individual magnetic field detection unit 100d has a magnetoresistive element 10d as a magnetic detection element. The magnetoresistive elements 10a, 10b, 10c, and 10d constitute a full-bridge circuit 15, and the magnetic field detection unit 2 measures the magnetic field along the X direction. The power supply unit 3 applies a predetermined current or voltage to each unit based on a control signal from the control unit 7. The power supply unit 3 may also have a function to measure the signal from the magnetic field detection unit 2.

[0024] The magnetic field calculation unit 4 calculates the measured magnetic field H based on the output of the magnetic field detection unit 2. In the magnetic sensor 1, after the magnetic field calculation unit 4 calculates the measured magnetic field H, the signal corresponding to the calculated measured magnetic field H is amplified by the amplifier 5 and then converted into digital data by the A / D conversion circuit 6.

[0025] The four magnetoresistive elements 10a, 10b, 10c, and 10d in the magnetic field detection unit 2 of the magnetic sensor 1 according to one embodiment of the present invention may be provided on the same substrate (one chip). In this embodiment, the four magnetoresistive elements 10a, 10b, 10c, and 10d are provided on the same substrate (not shown) in Figure 2, and Figure 2 is a view of the magnetic field detection unit 2 of the magnetic sensor 1 as seen from the laminated surface (front surface) of the substrate in the direction normal to the substrate. That is, in Figure 2, the Z1 side is the front surface of the substrate, and the Z2 side is the back surface of the substrate. The Z direction is along the lamination direction of the magnetoresistive elements 10a, 10b, 10c, and 10d.

[0026] The magnetic field detection unit 2 has a full bridge circuit 15 in which a first half-bridge circuit, in which magnetoresistive elements 10a and 10b, both extending in the Y direction, are connected in series between the power supply terminal Vdd, which is the power supply point from the power supply unit 3, and the ground terminal GND, and a second half-bridge circuit, in which magnetoresistive elements 10c and 10d, both extending in the Y direction, are connected in series, are connected in parallel.

[0027] The first half-bridge circuit has an output terminal V1 between magnetoresistive elements 10a and 10b. The second half-bridge circuit has an output terminal V2 between magnetoresistive elements 10c and 10d. The potential difference between these two output terminals V1 and V2 (midpoint potential Va of the first half-bridge circuit - midpoint potential Vb of the second half-bridge circuit) allows for the quantitative measurement of the magnitude of an externally applied magnetic field as the measured magnetic field H. In this embodiment, a first signal including the midpoint potential Va from output terminal V1 and a second signal including the midpoint potential Vb from output terminal V2 are output from the magnetic field detection unit 2, and the processing performed by the magnetic field calculation unit 4 includes calculating the midpoint potential difference using these first and second signals as input.

[0028] In the pair of magnetoresistive elements 10a and 10b forming the first half-bridge circuit, the magnetization fixed layer 11 (see Figure 3) of the magnetoresistive elements can maintain its magnetization 11m in a predetermined direction even when subjected to a measurement magnetic field H within the measurement range. Specifically, the magnetization 11m of the magnetization fixed layer 11 is oriented X2 with respect to magnetoresistive element 10a and X1 with respect to magnetoresistive element 10b, along the X direction which is the direction in which the measurement magnetic field H is applied (first direction), as shown by the white arrows in Figure 2. Furthermore, in the pair of magnetoresistive elements 10c and 10d forming the second half-bridge circuit, the magnetization 11m of the magnetization fixed layer 11 is oriented X1 with respect to magnetoresistive element 10c and X2 with respect to magnetoresistive element 10d, as shown by the white arrows in Figure 2.

[0029] In the first half-bridge circuit and the second half-bridge circuit, the magnetization 11m of the magnetization fixed layer 11 of the magnetoresistive element 10b on the power terminal Vdd side and the magnetization 11m of the magnetoresistive element 10d on the power terminal Vdd side are in opposite directions (antiparallel). Also, the magnetization 11m of the magnetoresistive element 10a on the ground terminal GND side and the magnetization 11m of the magnetoresistive element 10c on the power terminal GND side are in opposite directions (antiparallel). Therefore, the sensitivity axis direction of the magnetoresistive elements 10a, 10b, 10c, and 10d is the X direction (first direction).

[0030] Furthermore, in the four magnetoresistive elements 10a, 10b, 10c, and 10d, the direction of magnetization 13m of the free magnetic layer 13 (see Figure 3) is the same when no measurement magnetic field H is applied, and it is aligned with the Y2 direction, as shown by the black arrow in Figure 2. When the free magnetic layer 13 receives a measurement magnetic field H in the first direction (X direction), it can be magnetized in a direction aligned with the measurement magnetic field H.

[0031] In magnetoresistive elements 10a, 10b, 10c, and 10d according to one aspect of the present invention, the direction of the magnetization 13m of the free magnetic layer 13 in a no-magnetic-field state where no measurement magnetic field H is applied is aligned with the direction of the magnetization 11m of the magnetization fixed layer 11 in the Y2 direction by a bias magnetic field. As a result, the magnetoresistive elements 10a, 10b, 10c, and 10d exhibit reduced hysteresis in the measurement of the measurement magnetic field H. As shown in Figure 2, in this embodiment, the first direction (direction of application of the measurement magnetic field H = direction of the sensitivity axis) is the X direction, the second direction (direction of magnetic anisotropy when no measurement magnetic field H is applied to the magnetosensitive part) is the Y direction, and the third direction is the Z direction.

[0032] With the above configuration, as the magnitude of the measured magnetic field H in the X direction changes, the outputs from the output terminal V1 of the first half-bridge circuit and the output terminal V2 of the second half-bridge circuit change in opposite directions. Therefore, a large output is obtained as the potential difference (Va - Vb) between the two output terminals V1 and V2. Thus, the magnetic sensor 1 can detect the measured magnetic field H with high precision. In addition, the first half-bridge circuit or the second half-bridge circuit can be used instead of the full-bridge circuit 15, or the magnetoresistive element 10a can be used alone.

[0033] Figure 3 illustrates an example (top pin structure) of a magnetic field detection unit included in a magnetic sensor according to the first embodiment of the present invention. Figure 3 corresponds to the XZ cross-sectional view along the line A-A' in Figure 2.

[0034] The individual magnetic field detection unit 100a includes a magnetoresistive element 10a that exhibits a magnetoresistive effect, having a free magnetic layer 13 which is a magnetosensitive part that can be magnetized in a direction along the measurement magnetic field H, a magnetization fixed layer 11 which can maintain a state in which the magnetization 11m is aligned with the first direction (X direction) in Figure 3, and a non-magnetic layer 12 located between the free magnetic layer 13 and the magnetization fixed layer 11, and a magnetic anisotropy control unit 60 which aligns the magnetic anisotropy of the magnetosensitive part (free magnetic layer 13) when the measurement magnetic field H is not applied with a second direction (Y direction) perpendicular to the first direction.

[0035] In this embodiment, the magnetoresistive element 10a is formed by stacking a free magnetic layer 13, a non-magnetic layer 12, and a magnetization-fixed layer 11 on a substrate SB in the third direction (Z direction). As described above, the magnetization-fixed layer 11 is distal to the substrate SB than the free magnetic layer 13 (located on the Z1 side), so the magnetoresistive element 10a in this embodiment has a so-called top-pin structure. The magnetoresistive element 10a can measure the strength of the measurement magnetic field H applied to the free magnetic layer 13 by detecting the change in the resistance value of the magnetoresistive element 10a caused by the misalignment of the magnetization direction between the free magnetic layer 13 and the magnetization-fixed layer 11, which sandwich the non-magnetic layer 12.

[0036] The magnetization fixed layer 11 is constructed using a magnetic material such as a CoFe alloy (cobalt-iron alloy). The non-magnetic layer 12 is an insulating barrier layer made of, for example, MgO, Al2O3, or titanium oxide, when the magnetoresistive element 10a is a tunnel magnetoresistive element (TMR). The free magnetic layer 13 is constructed using a soft magnetic material such as a CoFe alloy or NiFe alloy (nickel-iron alloy). The magnetization fixed layer 11 and the free magnetic layer 13 may be single-layer or multilayer structures. In the case of a multilayer structure, it is preferable to have a multilayer ferristructure. When the magnetoresistive element 10a is a giant magnetoresistive element (GMR), a non-magnetic material such as Cu is used as the constituent material of the non-magnetic layer 12. In this embodiment, the free magnetic layer 13 is located on the Z2 side of the magnetoresistive element 10a, and the detection center 10P of the magnetoresistive element 10a is located at the center of the free magnetic layer 13.

[0037] In this embodiment, the magnetoresistive element 10a of the individual magnetic field detection unit 100a is, as a specific example, a tunnel magnetoresistive element (TMR). Measurement wiring 62 is provided so that a voltage from a measurement power supply is applied in a third direction (Z direction) between the free magnetic layer 13 and the magnetization fixed layer 11 of the magnetoresistive element 10a for the purpose of measuring the electrical characteristics of the magnetoresistive element 10a. In this embodiment, the magnetoresistive element 10a and the magnetic anisotropy control unit 60 are stacked in a second direction (Z direction). Since the magnetic anisotropy control unit 60 is made of a conductive material, the measurement wiring 62 is provided so that a voltage from the measurement power supply is applied to the free magnetic layer 13 via the magnetic anisotropy control unit 60.

[0038] In the individual magnetic field detection unit 100a according to this embodiment, the magnetic anisotropy control unit 60 is made of a film-like material and is located closer to the substrate SB than the magnetoresistive element 10a. That is, in the individual magnetic field detection unit 100a according to this embodiment, the magnetic anisotropy control unit 60 is formed first, and then the magnetoresistive element 10a is formed.

[0039] In this embodiment, the magnetic anisotropy control unit 60 comprises a spin Hall portion 20 capable of generating spin orbit torque by energizing, and a magnetic bias portion 40 located between the spin Hall portion 20 and the free magnetic layer 13, consisting of a film-like material and magnetically coupled with the free magnetic layer 13, and has a laminated structure in the Z direction (third direction).

[0040] The magnetic bias portion 40 is in contact with the free magnetic layer 13, which is the magnetosensitive portion, and has a portion made of an antiferromagnetic material. In this embodiment, the magnetic bias portion 40 is made of an antiferromagnetic material, and as shown in Figure 3, the magnetic anisotropy (magnetization 40m) is aligned in the second direction based on the spin orbit torque from the spin Hall portion 20.

[0041] The spin Hall portion 20 generates a spin current in the thickness direction (Z direction) by energization in the in-plane direction (XY in-plane direction) (for example, a current 20c shown in FIG. 11 described later is in the X direction), and the generated spin is orthogonal to the energization direction within the plane. As shown in FIG. 11 described later, when the current 20c is in the X direction and the direction of the spin current is in the Z direction, the deflection direction of spins flowing along the spin current (spin deflection direction) is the Y direction. That is, the energization direction, the spin current direction, and the spin direction are mutually orthogonal. In this way, based on the spin-orbit torque of the spin current generated in the spin Hall portion 20, the magnetic anisotropy (magnetization 40m) of the magnetic bias portion 40 is set to a predetermined direction, and the orientation of the magnetic anisotropy (magnetization 13m) of the free magnetic layer 13 is set so as to follow the magnetic anisotropy (magnetization 40m) of the magnetic bias portion 40 set in the predetermined direction.

[0042] The direction (setting direction) of the magnetic anisotropy of the magnetic bias portion 40 set by such spin-orbit torque is determined by the initial magnetic anisotropy direction (initial direction) of the magnetic bias portion 40 and the spin deflection direction (spin deflection direction) from the spin Hall portion 20. When the measurement magnetic field H is in the X direction, the magnetic anisotropy that the free magnetic layer 13 should have, that is, the direction of the bias magnetic field to be applied, is the Y direction or Z direction orthogonal to the X direction. When the thickness direction (the direction with the shortest length) of the spin Hall portion 20 is the Z direction as in the present embodiment, the energization direction is set to the XY in-plane direction so that the spin current direction is the Z direction. Therefore, the spin deflection direction is the XY in-plane direction. From the above preconditions, the modes of setting the magnetic anisotropy in the magnetic bias portion 40 are the following three types depending on the combination of the initial direction and the spin deflection direction.

[0043] Type A Initial direction: Z direction Spin deflection direction: X direction Setting direction: Y direction Type B Initial direction: Y direction Spin deflection direction: Y direction Setting direction: Y direction Type C Initial direction: Y direction Spin deflection direction: X direction Setting direction: Z direction

[0044] In other words, in Type A, the magnetic anisotropy in the magnetic bias section 40 is set so that the spin deflection direction is perpendicular to the initial direction (direction perpendicular to the plane), and in this case, the set direction is perpendicular to both the initial direction and the spin deflection direction. In Type B, the magnetic anisotropy in the magnetic bias section 40 is set so that the initial direction (in-plane direction) and the spin deflection direction are collinear (same direction), and in this case, the set direction is also collinear to the initial direction. In Type C, the magnetic anisotropy in the magnetic bias section 40 is set so that the spin deflection direction is perpendicular to the initial direction (in-plane direction), and in this case, the set direction is perpendicular to both the initial direction and the spin deflection direction.

[0045] As will be described later, the first embodiment uses Type A and Type B.

[0046] By applying current to the spin Hall portion 20 in the XY plane, the spin Hall effect and the Rashba-Edelstein effect are manifested, and a spin orbit torque is applied to the magnetic bias portion 40. The materials constituting the spin Hall portion 20 include heavy metals (5d transition metals) with high specific gravity among paramagnetic transition metals such as Hf, Ta, W, Pt, and Ir; topological insulators such as BiSb, BiSe, Bi2Se3, and Bi2Te3; and Mn3X (X = Sn, Ge, Ga, RH, Pt, Ir), Mn 1-x Tr x Examples include antiferromagnetic materials such as the gamma phase (Tr = Ni, Fe, Cu, Ru, Pd, Ir, RH, Pd, Pt); and half-Heusler alloy topological semimetals made of mixed crystals of these materials, such as LuPtSb, LuPdBi, LuPtBi, ScPtBi, YAuPb, LaPtBi, CePtBi, THPtPb, and LaAuPb.

[0047] In the specific example shown in Figure 3, the spin hall portion 20 is a film-like body, and this film-like body may be constituted by a single structure, that is, a single-layer film, or may be constituted by a laminated film. In the case of a laminated film, a boundary region may be formed between adjacent films. The entire spin hall portion 20 may be composed of a single material, or may be composed of a plurality of materials. When composed of a plurality of materials, it may have a laminated structure as described above, or may have a dispersed structure. In the case of having a dispersed structure, the degree of dispersion is arbitrary, and the structure may be such that nanocrystals are dispersed, or a fixed pattern may be formed. Further, a compositional distribution may be set in the spin hall portion 20.

[0048] The magnetic bias portion 40 can set the magnetic anisotropy (magnetization 40m) in a predetermined direction based on the spin-orbit torque from the spin hall portion 20. In addition, since the magnetic bias portion 40 is magnetically coupled to the free magnetic layer 13 of the magnetoresistive effect element 10a, the magnetic anisotropy of the free magnetic layer 13 (magnetization 13m) is set based on the spin-orbit torque from the spin hall portion 20. Like the spin hall portion 20, the magnetic bias portion 40 may also be composed of a single material, or may be composed of a plurality of materials. When composed of a plurality of materials, it may have a dispersed structure, or a compositional distribution may be set in the magnetic bias portion 40.

[0049] The magnetic bias section 40 may be made of any material, as long as it has the function of setting magnetic anisotropy based on the spin-orbit torque described above. Similar to the free magnetic layer 13, it may be made of a ferromagnetic material or an antiferromagnetic material. Specific examples of antiferromagnetic materials include at least a part of the material that constitutes the spin Hall section 20 described above. When the magnetic bias section 40 includes an antiferromagnetic material, a magnetic field may be generated inside the magnetic bias section 40 based on a different physical phenomenon than the magnetization when the magnetic bias section 40 includes a ferromagnetic material (for example, a virtual magnetic field). Therefore, in this specification, the concept of the term "magnetization" in relation to the magnetic bias section 40, etc., also includes the generation of a magnetic field inside the magnetic bias section 40 based on a different physical phenomenon than the magnetization of a ferromagnetic material. In this embodiment, as described above, the magnetic bias section 40 is made of an antiferromagnetic material.

[0050] The manufacturing method of the individual magnetic field detection unit 100a according to this embodiment will be described below with reference to Figure 4 and the like. Figure 4 is a flowchart showing the manufacturing method of an example (top pin structure) of an individual magnetic field detection unit of a magnetic sensor according to the first embodiment of the present invention. Figures 5 to 13 are explanatory diagrams (parts 1 to 9) showing the manufacturing method of an example (top pin structure) of an individual magnetic field detection unit of a magnetic sensor according to the first embodiment of the present invention.

[0051] First, as shown in Figure 5, spin holes 20 are formed on the substrate SB (step S101). The substrate SB is not particularly limited, and examples include silicon substrates having a thermal oxide film on their surface, alumina substrates, and glass substrates. If process-permissible, the substrate SB may also be composed of resin-based materials such as polyimide and polyester. The manufacturing method for the spin holes 20 can be determined according to the material, and for example, they can be formed by sputtering.

[0052] Next, as shown in Figure 6, control wiring 61 is formed on the substrate SB to which a current in the X direction can be applied to the spin hole portion 20 (step S102). The constituent material of the control wiring 61 is not particularly limited, but it is preferable to include a highly conductive material such as Cu, Al, Ag, or Au, and it may also contain materials such as Ni or Cr from the viewpoint of adjusting physical properties and ensuring chemical resistance.

[0053] Next, as shown in Figure 7, a magnetic bias portion 40 made of an antiferromagnetic material is formed on the spin Hall portion 20 (Z1 side), and its magnetic anisotropy can be set by receiving the spin orbit torque from the spin Hall portion 20 (step S103). The magnetic bias portion 40 is formed, for example, by sputtering. When forming the magnetic bias portion 40, a magnetic field is applied during film deposition, which imparts the desired magnetic anisotropy to the formed magnetic bias portion 40. In Figure 7, by applying an external magnetic field Hpy in the direction of Y2 during film deposition, the magnetization 40m of the formed magnetic bias portion 40 is oriented in the direction of Y2.

[0054] Furthermore, as shown in Figure 8, a free magnetic layer 13 is formed on the magnetic bias portion 40 (on the Z1 side) as a magnetosensitive portion (step S104). The free magnetic layer 13 is made of a magnetic material that can rotate so that its magnetization 13m aligns with the measurement magnetic field H when it is subjected to the measurement magnetic field H. The free magnetic layer 13 is formed, for example, by sputtering. In Figure 8, the formed free magnetic layer 13 has magnetic anisotropy (magnetization 13m) in the Y2 direction because it is magnetically coupled with the magnetic bias portion 40 which has magnetic anisotropy (magnetization 40m) in the Y2 direction.

[0055] As shown in Figures 9 and 10, a non-magnetic layer 12 is formed on the free magnetic layer 13 (on the Z1 side) by sputtering or the like (step S105), and then a magnetization fixed layer 11 is formed on top of that (on the Z1 side) by sputtering or the like (step S106).

[0056] Once the structure shown in Figure 10 is obtained, as shown in Figure 11, current is supplied to the control wiring 61 to flow a current 20c in the X direction, specifically in the X1 direction in Figure 11. In this embodiment, the magnetic anisotropy of the magnetic bias section 40 is set in the Type B configuration, so as shown in Figure 11, the magnetic anisotropy in the Y2 direction becomes stronger in the magnetic bias section 40. In this embodiment, the heat treatment is performed with the magnetic anisotropy control unit 60 energized. In this specification, in order to distinguish it from other annealing treatments, the annealing treatment involving energization of the magnetic anisotropy control unit 60 is also referred to as the "first annealing."

[0057] By performing the first annealing, an appropriate exchange-coupling interaction occurs between the antiferromagnetic material located on the Z1 side of the magnetic bias section 40 facing the free magnetic layer 13 and the Z2 side of the free magnetic layer 13 (magnetic sensing section) facing the magnetic bias section 40, and a magnetic field 40af based on this exchange-coupling interaction is generated in the Y2 direction. As a result, as shown in Figure 12, the magnetization 13m of the free magnetic layer 13 becomes stronger in the Y2 direction (step S107), and the magnetic sensing section (free magnetic layer 13) is subjected to a bias magnetic field in the Y direction (second direction) which is perpendicular to the first direction (X direction) which is the sensitivity axis direction in the XY plane.

[0058] The processing conditions for the first annealing (temperature, time, etc.) are set so that the exchange bond interaction described above occurs appropriately. An example, though not limited to this, is holding at 500°C for 30 minutes.

[0059] After the first annealing is completed, an annealing process (magnetic field annealing) is then performed while applying an external magnetic field Hpx in the X direction (X2 direction in Figure 13) to fix the magnetization 11m of the magnetization fixing layer 11 (step S108). The magnetic field annealing process fixes the magnetization 11m of the magnetization fixing layer 11 in the X2 direction. The processing conditions for the magnetic field annealing process (temperature, time, applied magnetic field, etc.) are set so that the magnetization 11m of the magnetization fixing layer 11 is properly fixed. An example, though not limited to this, is holding at 1 mT and 290°C for 60 minutes.

[0060] Here, when performing annealing in a magnetic field in step S108, it is preferable to continue supplying current to the spin Hall portion 20 in the X1 direction, similar to step S107. This makes the magnetization 13m of the free magnetic layer 13 less susceptible to the influence of the external magnetic field Hpx applied during annealing in a magnetic field. Rather, even during annealing in a magnetic field, the magnetic bias portion 40 will have strong magnetization anisotropy in the Y2 direction. Therefore, the magnetization 13m of the free magnetic layer 13, which is a magnetosensitive layer magnetically coupled to the magnetic bias portion 40, is also maintained in the Y2 direction, and the possibility of the bias magnetic field in the Y2 direction being weakened by the external magnetic field Hpx in the X2 direction is stably reduced.

[0061] If the processing conditions for the first annealing, particularly the processing time and temperature, overlap with the processing conditions for annealing in a magnetic field, these processes can be performed simultaneously. That is, by applying an external magnetic field Hpx while performing the first annealing, the application of a bias magnetic field in the Y direction (second direction) to the magnetizing part (free magnetic layer 13) and the fixing of the magnetization 11m of the magnetization fixing layer 11 in the X direction can be achieved simultaneously, thereby improving productivity. Furthermore, shortening the total heating time is preferable from the viewpoint of suppressing the effects of oxidation on the manufactured element.

[0062] Subsequently, by providing measurement wiring 62 for realizing measurement using the magnetoresistive element 10a (step S109), the individual magnetic field detection unit 100a shown in Figure 3 is obtained.

[0063] Figure 14 is a flowchart showing a modified example of a manufacturing method for an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the first embodiment of the present invention. In this modified example, the timing of wiring formation differs from the manufacturing method shown in Figure 4 and the like. Specifically, the measurement wiring 62 is formed before the first annealing (step S107), and the control wiring 61, which is formed in step S102, is also formed at the same time (step S102A).

[0064] Figure 15 is a flowchart showing another modified example of the manufacturing method for an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the first embodiment of the present invention. In this modified example, the method of forming the magnetization fixed layer 11 differs from the manufacturing method shown in the example in Figure 4, etc.

[0065] In the example shown in Figure 4, the magnetization fixed layer 11 was formed (step S106) and then annealed in a magnetic field (step S108). However, in this modified example, the magnetization fixed layer 11 is formed by deposition in a magnetic field (step S106A). This eliminates the need for annealing in a magnetic field (step S108). It is also preferable to apply current in the X1 direction to the spin hole portion 20 during deposition in a magnetic field (step S106A) to minimize the influence of the external magnetic field Hpx on the magnetosensitive portion (free magnetic layer 13).

[0066] Switching from magnetic field deposition (step S106A) to first annealing (step S107) can be done by continuing to supply current to the spin hole portion 20 in the X1 direction, stopping the application of the external magnetic field Hpx and the deposition of the magnetization fixed layer 11 (e.g., sputtering), and performing heating for the first annealing. If heating is permitted during magnetic field deposition (step S106A), heating for the first annealing can also be performed, thereby enabling step S107 to be carried out while step S106A is being performed.

[0067] Next, with reference to Figures 16 to 24, another example (bottom pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment and its manufacturing method will be described. Figure 16 is a diagram illustrating another example (bottom pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention. Figure 17 is a flowchart illustrating the manufacturing method of another example (bottom pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention. Figures 18 to 24 are explanatory diagrams (1 to 7) of the manufacturing method of another example (bottom pin structure) of the individual magnetic field detection unit of the magnetic sensor according to the first embodiment of the present invention.

[0068] The individual magnetic field detection unit 100a1, which is another example of the first embodiment shown in Figure 16, differs from the individual magnetic field detection unit 100a shown in Figure 3 in that, while the individual magnetic field detection unit 100a has a top-pin structure, the individual magnetic field detection unit 100a1 has a bottom-pin structure, and the magnetization fixed layer 11 is closer to the substrate SB (towards Z2) than the free magnetic layer 13.

[0069] In the case of a bottom pin structure, the magnetization fixed layer 11 is formed first. In this example, as shown in Figure 18, magnetic field deposition is performed while applying an external magnetic field Hpx (step S201). When magnetic field deposition is performed in this way before the other components of the magnetoresistive element 10a are formed, the magnetization 11m of the magnetization fixed layer 11 can be fixed in the X2 direction without magnetically affecting those other components. Step S201 may also be performed by deposition in a neutral magnetic field and annealing in a magnetic field, instead of magnetic field deposition. In this case as well, the magnetization 11m of the magnetization fixed layer 11 can be fixed in the X2 direction without magnetically affecting the other components of the magnetoresistive element 10a.

[0070] Next, the non-magnetic layer 12 is formed (Figure 19, step S202) and the free magnetic layer 13 is formed (Figure 20, step S203) to form the structure of the magnetoresistive element 10a on the substrate SB.

[0071] Next, as shown in Figure 21, a magnetic field deposition is performed to form a magnetic bias portion 40 on the free magnetic layer 13 (Z1 side) while applying an external magnetic field Hpy in the direction of Y2 (step S204). This forms a magnetic bias portion 40 having a portion made of antiferromagnet that is in contact with the free magnetic layer 13. Due to the magnetic field deposition, the magnetization 40m of the magnetic bias portion 40 is directed in the direction of Y2, and the magnetization 13m of the free magnetic layer 13 that is magnetically coupled with the magnetic bias portion 40 is influenced by the magnetization 40m of the magnetic bias portion 40 and is directed in the direction of Y2.

[0072] Furthermore, as shown in Figure 22, a spin hole portion 20 is formed on the magnetic bias portion 40 (Z1 side) (step S205), and wiring including control wiring 61 and measurement wiring 62 is formed (step S206).

[0073] Once the predetermined structure is formed on the substrate SB, a first annealing process is performed by energizing the spin hole portion 20 from the control wiring 61 and performing a heat treatment (step S207). By applying a current 20c in the direction of X1 to the spin hole portion 20, the magnetization 40m in the direction of Y2 of the magnetic bias portion 40 becomes stronger, as shown in Figure 23. By performing a heat treatment in this state, an appropriate exchange coupling interaction occurs between the Z1 side portion of the free magnetic layer 13 (magnetic sensing portion) facing the magnetic bias portion 40 and the antiferromagnet located in the Z2 side portion of the magnetic bias portion 40 facing the free magnetic layer 13, and a magnetic field 40af is generated in the direction of Y2 based on this exchange coupling interaction. As a result, as shown in Figure 24, the magnetization 13m of the free magnetic layer 13 becomes stronger in the direction of Y2. Even after the first annealing is completed, the free magnetic layer 13 remains in a state where a bias magnetic field in the direction of Y2 is applied based on the exchange coupling interaction (Figure 16).

[0074] In the above manufacturing method, as shown in Figure 21, the magnetic bias section 40 is deposited in a magnetic field while the magnetization 11m of the magnetization fixed layer 11 is fixed. Therefore, there is a possibility that magnetization dispersion may occur in the magnetization fixed layer 11 during this process. To avoid this possibility, the magnetic bias section 40 may be deposited in a magnetic field-free environment, and just before energizing the spin Hall section 20 shown in Figure 23, an external magnetic field in the direction of Y2 may be applied, for example, by an induced magnetic field, to set the initial magnetic anisotropy (magnetization 40m) of the magnetic bias section 40 to the direction of Y2. Once energizing the spin Hall section 20 is started and the magnetic anisotropy (magnetization 40m) of the magnetic bias section 40 is set to the direction of Y2 by the spin orbit torque, the application of an external magnetic field in the direction of Y2 becomes unnecessary.

[0075] Thus, when the initial magnetic anisotropy (magnetization 40m) of the magnetic bias portion 40 is set by applying an external magnetic field, in any embodiment, the magnetic bias portion 40 may be formed in a magnetic field-free environment, and annealing in a magnetic field to the magnetic bias portion 40 is unnecessary.

[0076] The above explanation uses Type B as a specific example for setting the magnetic anisotropy in the magnetic bias section 40, but it can be manufactured similarly even if it is Type A. Figures 25 to 27 are explanatory diagrams (1 to 3) of another example (Type A) of the manufacturing method of an example (top pin structure) of an individual magnetic field detection section (top pin structure) of a magnetic sensor according to the first embodiment of the present invention.

[0077] In the manufacturing process for Type A, the formation of the control wiring 61 in step S102 and the magnetic field deposition of the magnetic bias portion in step S103 differ from the manufacturing process for Type B shown in Figure 4. Specifically, in the case of Type B, as shown in Figure 6, the control wiring 61 is formed so that a current in the X direction can be applied to the spin Hall portion 20, whereas in the case of Type A, as shown in Figure 25, the control wiring 61 is formed so that a current in the Y direction can be applied to the spin Hall portion 20. As a result, the direction of the spins generated in the spin Hall portion 20 is the Y direction.

[0078] Furthermore, in the case of Type B, as shown in Figure 7, the external magnetic field Hpy applied during film deposition in the magnetic bias section 40 is directed towards Y2, whereas in the case of Type A, as shown in Figure 25, the external magnetic field Hpz applied during film deposition in the magnetic bias section 40 is directed towards Z1. As a result, the initial magnetic anisotropy (magnetization 40m) of the magnetic bias section 40 is directed towards Z1.

[0079] Figure 26 shows a state in which a magnetoresistive element 10a is formed on the magnetic anisotropy control unit 60 having a spin Hall portion 20 and a magnetic bias portion 40 (on the Z1 side). Since the free magnetic layer 13 is magnetically coupled with the magnetic bias portion 40, its magnetization 13m is oriented Z1 along the magnetization 40m of the magnetic bias portion 40. On the other hand, the magnetization 11m of the magnetization fixing layer 11 is fixed in the X2 direction by performing an appropriate process (deposition in a magnetic field or annealing in a magnetic field).

[0080] In this state, when a current in the direction of Y1 is applied to the spin Hall portion 20 and a first annealing process is performed in which a heat treatment is carried out, as shown in Figure 27, the magnetization 40m of the magnetic bias portion 40, i.e., the magnetic anisotropy, becomes in the direction of Y2, and an appropriate exchange coupling interaction occurs between the Z2 side portion of the free magnetic layer 13 (magnetic sensing portion) facing the magnetic bias portion 40 and the antiferromagnet located in the Z1 side portion of the magnetic bias portion 40 facing the free magnetic layer 13, and a magnetic field 40af based on this exchange coupling interaction is generated in the direction of Y2. As a result, as shown in Figure 27, the magnetization 13m of the free magnetic layer 13 also becomes in the direction of Y2. Thus, even when the application of current to the spin Hall portion 20 is stopped, the free magnetic layer 13 is subjected to a bias magnetic field in the direction of Y2, and the magnetoresistive element 10a shown in Figure 3 is obtained.

[0081] (Second Embodiment) Figure 28 is an explanatory diagram of a full-bridge circuit included in a magnetic sensor according to the second embodiment of the present invention. Figure 29 is a diagram illustrating an example of an individual magnetic field detection unit included in a magnetic sensor according to the second embodiment of the present invention (top pin structure, magnetic field applied in the Y direction when forming the magnetic anisotropy control unit). Figure 30 is a diagram illustrating another example of an individual magnetic field detection unit included in a magnetic sensor according to the second embodiment of the present invention (top pin structure, magnetic field applied in the Z direction when forming the magnetic anisotropy control unit).

[0082] The magnetic field detection unit 2a according to the second embodiment shown in Figure 28 differs from the magnetic field detection unit 2 according to the first embodiment shown in Figure 2 in the direction of the measured magnetic field H and, consequently, the direction of the magnetization 11m of the magnetization fixed layer 11. Specifically, in the magnetic field detection unit 2a according to the second embodiment, the measured magnetic field H is in the Z direction, the direction of the magnetization 11m of the magnetization fixed layer 11 of the magnetoresistive element 10a and magnetoresistive element 10d is in the Z1 direction, and the direction of the magnetization 11m of the magnetoresistive element 10b and magnetoresistive element 10c is in the Z2 direction.

[0083] In the individual magnetic field detection unit 100a according to the second embodiment shown in Figure 29, compared to the individual magnetic field detection unit 100a according to the first embodiment shown in Figure 3, the direction of the magnetization 11m of the magnetization fixed layer 11 is set in the Z direction, based on the fact that the measured magnetic field H is in the Z direction, and the direction of the bias magnetic field, i.e., the magnetic anisotropy of the free magnetic layer 13 which is the magnetosensitive part, is set in the Y2 direction.

[0084] The magnetic anisotropy setting in the magnetic bias section 40 that realizes this biased magnetic field can be set to Type A or Type B. In Figure 29, Type B is used, and the external magnetic field Hpy applied when depositing the magnetic bias section 40 in a magnetic field is directed towards Y2. In Figure 30, Type A is used, and the external magnetic field Hpz applied when depositing the magnetic bias section 40 in a magnetic field is directed towards Z1.

[0085] (Third Embodiment) Figure 31 is an explanatory diagram of a full-bridge circuit included in a magnetic sensor according to the third embodiment of the present invention. Figure 32 is a diagram illustrating an example of an individual magnetic field detection unit (top pin structure) included in a magnetic sensor according to the third embodiment of the present invention. Figures 33 to 35 are explanatory diagrams (1 to 3) of a method for manufacturing an example of an individual magnetic field detection unit (top pin structure) of a magnetic sensor according to the third embodiment of the present invention.

[0086] The magnetic field detection unit 2b according to the third embodiment shown in Figure 31 differs from the magnetic field detection unit 2 according to the first embodiment shown in Figure 2 in that the direction of the magnetization 13m of the free magnetic layer 13, which is the magnetosensitive part, is different. Specifically, in the magnetic field detection unit 2b according to the third embodiment, the direction of the magnetization 13m of the free magnetic layer 13 of the magnetoresistive elements 10a, 10b, 10c, and 10d is all in the Z1 direction.

[0087] In the individual magnetic field detection unit 100a according to the third embodiment shown in Figure 32, compared to the individual magnetic field detection unit 100a according to the first embodiment shown in Figure 3, the direction of the bias magnetic field, i.e., the magnetic anisotropy (magnetization 13m) of the free magnetic layer 13 which is the magnetosensitive part, is set to the Z1 direction.

[0088] The magnetic anisotropy (magnetization 40m) in the magnetic bias section 40 that realizes this biased magnetic field can be set to Type C. Figure 33, like Figure 10 of the manufacturing method of the first embodiment, shows the stage in which the formation of the magnetic anisotropy control section 60 and the magnetoresistive element 10a has been completed, and the control wiring 61 is formed so that current can be applied in the Y direction. The external magnetic field Hpy in the Y2 direction, shown in parentheses in Figure 33, indicates the external magnetic field Hpy applied when the magnetic bias section 40 is deposited in a magnetic field. The magnetic anisotropy (magnetization 40m) of the magnetic bias section 40 deposited in a magnetic field is in the Y2 direction, and as a result, the magnetic anisotropy (magnetization 13m) of the free magnetic layer 13 is also in the Y2 direction.

[0089] Figure 34 shows the structure shown in Figure 33 undergoing the first annealing process. By applying a current in the direction of Y1, the magnetic anisotropy (magnetization 40m) of the magnetic bias portion 40 becomes oriented towards Z1. By performing a heat treatment in this state, an appropriate exchange coupling interaction occurs between the Z2-side portion of the free magnetic layer 13 (magnetic sensing portion) facing the magnetic bias portion 40 and the antiferromagnetic material located in the Z1-side portion of the magnetic bias portion 40 facing the free magnetic layer 13. A magnetic field 40af is generated in the direction of Z1 based on this exchange coupling interaction. As a result, as shown in Figure 34, the magnetization 13m of the free magnetic layer 13 becomes oriented towards Z1. Even after the first annealing is completed, the free magnetic layer 13 remains subjected to a bias magnetic field oriented towards Z1 based on the exchange coupling interaction.

[0090] Subsequently, as shown in Figure 35, by performing magnetic field annealing by applying an external magnetic field Hpx while energizing the spin hole portion 20 in the Y1 direction, the magnetization 11m of the magnetization fixing layer 11 can be fixed in the X2 direction.

[0091] (Fourth Embodiment) Hereinafter, an example of an individual magnetic field detection unit provided in a magnetic sensor according to the fourth embodiment of the present invention will be described with reference to Figures 36 to 39. Figure 36 is a diagram illustrating an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the Z direction) provided in a magnetic sensor according to the fourth embodiment of the present invention. Figure 37 is a flowchart showing the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the Z direction) of a magnetic sensor according to the fourth embodiment of the present invention. Figures 38 and 39 are explanatory diagrams (part 1 and part 2) of the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field in the Z direction) of a magnetic sensor according to the fourth embodiment of the present invention.

[0092] The individual magnetic field detection unit 100a of the magnetic sensor according to the fourth embodiment of the present invention measures a measurement magnetic field H in the Z direction, as shown in Figure 36, and has a structure in which a Hall element 10ha, which is a magnetic detection element, is provided on top of the magnetic anisotropy control unit 60 (on the Z1 side). In this embodiment, the Hall element 10ha and the magnetic anisotropy control unit 60 are electrically connected, and the supply wiring 63 connecting the power supply Vs and the individual magnetic field detection unit 100a is provided so that current in the X direction flows through the spin Hall portion 20 of the magnetic anisotropy control unit 60. The measurement wiring 62 for measuring the Hall voltage connects the measurement power supply Vm and the Hall element 10ha, and is capable of measuring the electromotive force generated in the Y direction in the Hall element 10ha.

[0093] In the Hall element 10ha, the bias magnetic field that contributes to improving hysteresis is set in the X direction, which is perpendicular to the direction of current flow from the power supply Vs, and in this embodiment, to the Y direction. In this embodiment, the bias magnetic field is set in the Y2 direction for the Hall element 10ha, and as a result, the magnetization 10m of the Hall element 10ha is in the Y2 direction.

[0094] The manufacturing method for the individual magnetic field detection unit 100a of the fourth embodiment is shown in Figure 37. First, a spin hole portion 20 (step S301) and a magnetic bias portion 40 (step S302) are formed on the substrate SB (Z1 side). Here, the magnetic bias portion 40 is formed by deposition (deposition in a magnetic field) while applying an external magnetic field Hpz in the Z direction. In Figure 38, the external magnetic field Hpz is shown in parentheses. As a result, the magnetic anisotropy (magnetization 40m) of the magnetic bias portion 40 is oriented towards Z1.

[0095] In this way, a Hall element 10ha, which is the magnetic sensing part, is formed on the magnetic anisotropy control unit 60 formed on the substrate SB (on the Z1 side) (step S303). As a result, the magnetization 10m of the Hall element 10ha, which is the magnetic sensing part, is equal to the magnetization 40m of the magnetic bias unit 40 set by magnetic field deposition, and is oriented towards Z1. Furthermore, supply wiring 63 and measurement wiring 62 are formed (step S304). In this way, the structure shown in Figure 38 is formed.

[0096] Next, the first annealing is performed (step S305). Here, when performing the first annealing, the control power supply I is used instead of the supply power supply Vs. Therefore, in this embodiment, the supply wiring 63 is used as the control wiring 61. By flowing a current 20c in the direction of X1 through the spin Hall portion 20, the magnetization 40m of the magnetic bias portion 40 becomes Y2 oriented. By performing a heat treatment in this state, an appropriate exchange-coupling interaction occurs between the antiferromagnetic material located on the Z1 side of the magnetic bias portion 40 facing the Hall element 10ha and the Z2 side of the Hall element 10ha (magnetic sensing portion) facing the magnetic bias portion 40, and a magnetic field 40af based on this exchange-coupling interaction is generated in the direction of Y2. As a result, as shown in Figure 39, the magnetization 10m of the Hall element 10ha becomes Y2 oriented. Even after the first annealing is completed, the Hall element 10ha remains in a state where a bias magnetic field in the direction of Y2 is applied based on the exchange-coupling interaction (Figure 36).

[0097] Figure 40 illustrates another example (Hall element, measured magnetic field in the Z direction) of the individual magnetic field detection unit of the magnetic sensor according to the fourth embodiment of the present invention. The configuration shown in Figure 40 is in contrast to the configuration shown in Figure 36, with the arrangement of the measurement power supply Vm and the supply power supply Vs reversed. Therefore, in this example, during the manufacturing process, current is supplied from the control power supply I instead of the measurement power supply Vm, and at this time, the measurement wiring 62 becomes the control wiring 61. By performing a first annealing treatment with current supplied from the control power supply I in the X1 direction, the magnetic anisotropy in the magnetic bias unit 40 is set in the Type B form, and the magnetization 40m is in the Y2 direction. As a result, the magnetic field 40af based on the exchange coupling interaction is also in the Y2 direction, and the magnetic anisotropy (magnetization 10m) of the Hall element 10ha is in the Y2 direction.

[0098] (Fifth Embodiment) Hereinafter, an example of an individual magnetic field detection unit provided in the fifth embodiment of the present invention will be described with reference to Figures 41 to 43. Figure 41 is a diagram illustrating an example of an individual magnetic field detection unit (Hall element, measurement magnetic field is in the X direction) provided in the fifth embodiment of the present invention. Figures 42 and 43 are explanatory diagrams (part 1 and part 2) of the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field is in the X direction) of the fifth embodiment of the present invention.

[0099] The individual magnetic field detection unit 100a of the magnetic sensor according to the fifth embodiment of the present invention measures a measurement magnetic field H in the X direction, as shown in Figure 41, and, similar to the fourth embodiment, has a structure in which the Hall element 10ha is provided above (on the Z1 side) the magnetic anisotropy control unit 60. In this embodiment as well, the Hall element 10ha and the magnetic anisotropy control unit 60 are electrically connected. The supply wiring 63 connecting the power supply Vs and the individual magnetic field detection unit 100a is connected to both ends of the individual magnetic field detection unit 100a in the Z direction, and is provided so that current in the Z direction flows through the Hall element 10ha. The measurement wiring 62 for measuring the Hall voltage connects the measurement power supply Vm and the Hall element 10ha, and is made capable of measuring the electromotive force generated in the Y direction in the Hall element 10ha. As will be described later, the measurement wiring 62 is connected to the control power supply I as control wiring 61 during the manufacturing process.

[0100] In this embodiment, the bias magnetic field in the Hall element 10ha, which contributes to improving hysteresis, is set in the Y direction, which is perpendicular to the direction of current flow from the power supply Vs (the Z direction in this embodiment). Specifically, the bias magnetic field is set in the Y2 direction for the Hall element 10ha, and as a result, the magnetic anisotropy (magnetization 10m) of the Hall element 10ha is in the Y2 direction.

[0101] The manufacturing method for the individual magnetic field detection unit 100a of the fifth embodiment is basically the same as the manufacturing method for the individual magnetic field detection unit 100a of the fourth embodiment. The difference is that, as described above, the control wiring 61 and the measurement wiring 62 are shared.

[0102] As shown in Figure 42, once a magnetic anisotropy control unit 60 is obtained, which is provided with a magnetic bias section 40 having magnetic anisotropy (magnetization 40m) in the Z1 direction, formed by film deposition while applying an external magnetic field Hpz in the Z direction, a current in the Y1 direction is passed through the spin Hall section 20 using a control power supply I, as shown in Figure 43. As mentioned above, since the Hall element 10ha and the magnetic anisotropy control unit 60 are electrically connected, the control power supply I can be connected to the measurement wiring 62 shown in Figure 41, which can then be used as a control wiring 61 to apply a current 20c to the spin Hall section 20. Based on the spin orbit torque generated by the Y1-direction current 20c thus applied to the spin Hall section 20, the magnetization 40m of the magnetic bias section 40 becomes Y2-direction. By performing the heat treatment in this state, an appropriate exchange-coupling interaction occurs between the antiferromagnetic material located on the Z1 side of the magnetic bias section 40 facing the Hall element 10ha and the Z2 side of the Hall element 10ha (magnetic sensing part) facing the magnetic bias section 40, and a magnetic field 40af based on this exchange-coupling interaction is generated in the direction of Y2. As a result, as shown in Figure 43, the magnetic anisotropy (magnetization 10m) of the Hall element 10ha becomes Y2-oriented. The above configuration of setting the magnetic anisotropy in the magnetic bias section 40 is Type A. Even after the first annealing is completed, the Hall element 10ha remains in a state where a bias magnetic field in the direction of Y2 is applied based on the exchange-coupling interaction (Figure 41).

[0103] Figure 44 illustrates another example (Hall element, measurement magnetic field in the X direction) of the individual magnetic field detection unit included in the fifth embodiment of the present invention. The configuration shown in Figure 44 is in contrast to the configuration shown in Figure 41, with the arrangement of the measurement power supply Vm and the supply power supply Vs reversed.

[0104] (Sixth Embodiment) Hereinafter, an example of an individual magnetic field detection unit provided in the magnetic sensor according to the sixth embodiment of the present invention will be described with reference to Figures 45 to 47. Figure 45 is a diagram illustrating an example of an individual magnetic field detection unit (Hall element, measurement magnetic field is in the X direction) provided in the magnetic sensor according to the sixth embodiment of the present invention. Figures 46 and 47 are explanatory diagrams (part 1 and part 2) of the manufacturing method of an example of an individual magnetic field detection unit (Hall element, measurement magnetic field is in the X direction) of the magnetic sensor according to the sixth embodiment of the present invention.

[0105] The individual magnetic field detection unit 100a of the magnetic sensor according to the sixth embodiment of the present invention measures a measurement magnetic field H in the X direction, as shown in Figure 45, and, similar to the fifth embodiment, has a structure in which the Hall element 10ha is provided above (on the Z1 side) the magnetic anisotropy control unit 60. In this embodiment as well, the Hall element 10ha and the magnetic anisotropy control unit 60 are electrically connected, and the supply wiring 63 connecting the power supply Vs and the individual magnetic field detection unit 100a is connected to both ends of the individual magnetic field detection unit 100a in the Z direction, so that a current in the Z direction flows through the Hall element 10ha. The measurement wiring 62 for measuring the Hall voltage connects the measurement power supply Vm and the Hall element 10ha, so that the electromotive force generated in the Y direction in the Hall element 10ha can be measured. Furthermore, the control wiring 61 connecting the control power supply I and the spin Hall unit 20 is provided so that a current in the X direction flows through the spin Hall unit 20.

[0106] In this embodiment, the bias magnetic field that contributes to improving hysteresis in the Hall element 10ha is set in a direction along the direction of current flow from the power supply Vs, which in this embodiment is the Z direction. Specifically, the bias magnetic field is set in the Z1 direction for the Hall element 10ha, and as a result, the magnetic anisotropy (magnetization 10m) of the Hall element 10ha is oriented in the Z1 direction.

[0107] The manufacturing method for the individual magnetic field detection unit 100a of the sixth embodiment is basically the same as the manufacturing method for the individual magnetic field detection unit 100a of the fourth embodiment. The difference is that control wiring 61, measurement wiring 62, and supply wiring 63 are provided, as described above.

[0108] As shown in Figure 46, after obtaining a magnetic anisotropy control unit 60 equipped with a magnetic bias section 40 having magnetic anisotropy (magnetization 40m) in the Z1 direction by forming a film while applying an external magnetic field Hpz in the Z direction, a current in the X1 direction is passed through the spin Hall section 20 using a control power supply I, as shown in Figure 47. By performing a heat treatment in this state, an appropriate exchange coupling interaction occurs between the antiferromagnetic material located on the Z1 side of the magnetic bias section 40 facing the Hall element 10ha and the Z2 side of the Hall element 10ha (magnetic sensing section) facing the magnetic bias section 40, and a magnetic field 40af is generated in the Z1 direction based on this exchange coupling interaction. As a result, as shown in Figure 47, the magnetic anisotropy (magnetization 10m) of the Hall element 10ha becomes Z1 oriented. Even after the first annealing is completed, the Hall element 10ha remains in a state where a bias magnetic field in the Z1 direction is applied based on the exchange coupling interaction (Figure 45).

[0109] Figure 48 illustrates another example (Hall element, measurement magnetic field in the X direction) of the individual magnetic field detection unit included in the sixth embodiment of the present invention. The configuration shown in Figure 48 is in contrast to the configuration shown in Figure 45, with the arrangement of the measurement power supply Vm and the supply power supply Vs reversed.

[0110] The embodiments described above are provided to facilitate understanding of the present invention and are not intended to limit it. Accordingly, each element disclosed in the above embodiments is intended to include all design modifications and equivalents that fall within the technical scope of the present invention.

[0111] For example, in the above description, the magnetic bias section 40 is entirely made of an antiferromagnetic material, but it is not limited to this. It is sufficient that the side facing the magnetic sensor (the Z1 side in the case of Figure 3) is made of an antiferromagnetic material so that an appropriate exchange-coupling interaction occurs with the magnetic sensor (free magnetic layer 13, Hall element 10ha). As one specific example of such a configuration, the magnetic bias section 40 may have a layer located on the side facing the magnetic sensor (the free magnetic layer 13 in the case of Figure 3) (the Z1 side in the case of Figure 3) and a layer located on the side facing the spin Hall section 20 (the Z1 side in the case of Figure 3), and these layers may be magnetically coupled. In this case, the layer on the magnetic sensor side should be made of an antiferromagnetic material and designed to appropriately generate an exchange-coupling interaction with the magnetic sensor, and the layer on the spin Hall section 20 side should be designed to appropriately have the function of receiving the spin-orbit torque from the spin Hall section 20 so that its magnetic anisotropy is aligned with the second direction.

[0112] In the above description, the magnetic anisotropy control unit 60 (specifically, the magnetic bias unit 40) was in direct contact with the magnetosensitive unit (free magnetic layer 13, Hall element 10ha), but this is not the only option. A magnetic layer may be provided between the magnetic anisotropy control unit 60 and the magnetosensitive unit (free magnetic layer 13, Hall element 10ha) that is magnetically coupled to both, and the magnetic layer may perform some of the functions of the magnetic anisotropy control unit 60.

[0113] For example, the magnetic layer may be made of a material that readily exhibits exchange coupling interaction with the antiferromagnetic portion of the magnetic anisotropy control unit 60 (specifically, the magnetic bias unit 40). In this case, the magnetizing portion (free magnetic layer 13, Hall element 10ha) does not need to exhibit exchange coupling interaction with the magnetic anisotropy control unit 60 (specifically, the magnetic bias unit 40). Therefore, it is sufficient that the magnetizing portion appropriately exhibits a spin valve effect with the magnetization fixed layer 11 when the magnetizing portion is a free magnetic layer 13, or the Hall effect when the magnetizing portion is a Hall element 10ha.

[0114] Furthermore, in the above description, the magnetic bias portion 40 was formed by deposition in a magnetic field so that it had magnetic anisotropy immediately before the first annealing, but this is not the only way. It is sufficient that some kind of bias magnetic field is applied to the individual magnetic field detection unit 100a immediately before the first annealing, and this bias magnetic field can be realized by a magnetic field from a permanent magnet or an induced magnetic field. This reduces the possibility of increased magnetization dispersion of the magnetization fixed layer 11 in the process of imparting magnetic anisotropy to the magnetic bias portion 40 in the case of a bottom pin structure.

[0115] Furthermore, although the magnetic anisotropy control unit 60 has a spin Hall portion 20 and a magnetic bias portion 40 in the above description, it is not limited to this and may have a single-layer structure. In this case, it is sufficient that by applying a current to the magnetic anisotropy control unit 60, which is made of a single layer and has magnetic anisotropy in a predetermined direction, a spin-orbit torque is generated inside it, and the magnetic anisotropy of the magnetic anisotropy control unit 60 can be controlled by this spin-orbit torque.

[0116] The present invention is useful as a magnetic measurement method that can align the magnetic anisotropy of a magnetosensitive part to a predetermined direction (second direction) without applying an external magnetic field.

[0117] 1: Magnetic sensor 2, 2a, 2b: Magnetic field detection unit 3: Power supply unit 4: Magnetic field calculation unit 5: Amplifier 6: A / D conversion circuit 7: Control unit 10P: Detection center 10a, 10b, 10c, 10d: Magnetoresistive element 10ha: Hall element 10m, 11m, 13m, 40m: Magnetization 11: Magnetization fixed layer 12: Non-magnetic layer 13: Free magnetic layer 15: Full bridge circuit 20: Spin Hall section 20c: Current 40: Magnetic bias section 40af: Magnetic field based on exchange coupling interaction 60: Magnetic anisotropy control unit 61: Control wiring 62: Measurement wiring 63: Supply wiring 100a, 100a1, 100b, 100c, 100d: Individual magnetic field detection unit GND : Ground terminal H: Measured magnetic field Hpx, Hpy, Hpz: External magnetic field I: Control power supply SB: Circuit board V1, V2: Output terminal Vdd: Power supply terminal Vm: Measurement power supply Vs: Supply power supply

Claims

1. A method for manufacturing a magnetic sensor comprising: a magnetic sensing element having a magnetic sensing portion whose sensitivity axis is along a first direction and whose magnetic anisotropy is along a second direction different from the first direction; and a magnetic anisotropy control unit having a portion made of an antiferromagnetic material and magnetically coupled to the magnetic sensing portion, wherein the magnetic anisotropy control unit has at least a portion of its magnetic anisotropy along the second direction based on a spin orbit torque generated by energizing, the method for manufacturing a magnetic sensor characterized by performing a first annealing by heating the magnetic anisotropy control unit while energizing it, thereby causing the magnetic anisotropy of the magnetic sensing portion to be aligned with the second direction based on an exchange coupling interaction involving the portion made of an antiferromagnetic material.

2. The method for manufacturing a magnetic sensor according to claim 1, wherein the magnetic sensing element is a magnetoresistive element having a laminated structure of a free magnetic layer, a non-magnetic layer, and a magnetization-fixed layer that constitute the magnetosensitive portion.

3. The method for manufacturing a magnetic sensor according to claim 2, wherein the first annealing is performed after fixing the magnetization of the magnetization fixed layer.

4. The method for manufacturing a magnetic sensor according to claim 2, wherein, after the first annealing, the magnetization of the magnetization fixing layer is fixed while current is applied to the magnetic anisotropy control unit.

5. The method for manufacturing a magnetic sensor according to claim 3 or 4, wherein the magnetization of the magnetization fixing layer is fixed after the magnetization fixing layer is formed.

6. The method for manufacturing a magnetic sensor according to claim 3 or 4, wherein the magnetization of the magnetization fixing layer is fixed while the magnetization fixing layer is being formed.

7. The method for manufacturing a magnetic sensor according to claim 1, wherein the magnetic sensing element is a Hall element.

8. The method for manufacturing a magnetic sensor according to claim 1, wherein the magnetic anisotropy control unit comprises a spin Hall portion that generates the spin orbit torque by energizing, and a magnetic bias portion having at least a portion made of the antiferromagnetic material on the side facing the magnetic sensing portion, and the magnetic anisotropy is aligned in the second direction based on the generated spin orbit torque.

9. The method for manufacturing a magnetic sensor according to claim 8, wherein the magnetic bias portion is made of the antiferromagnetic material.

10. The method for manufacturing a magnetic sensor according to claim 1, wherein the magnetic anisotropy control unit consists of a single layer.

11. A method for manufacturing a magnetic sensor according to claim 8 or 10, wherein a magnetic layer is provided between the magnetic anisotropy control unit and the magnetic sensing unit, the magnetic layer being magnetically coupled to both the magnetic anisotropy control unit and the magnetic sensing unit.

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