Sampling gas supply system

Abstract

Provided is a gas supply system (80) that supplies, to a gas analysis device (40), a sampling gas (9) for analysis from a sampling port (7) of a process chamber (2) in which a plurality of processes are performed under a plurality of different pressures. The gas supply system comprises: a sampling header (60) through which the sampling gas passes; a first exhaust device (71) which exhausts the sampling gas via the sampling header; a first conductance control device (10) which controls the conductance between the sampling port and the sampling header; a second conductance control device (20) which controls the conductance between the sampling header and the gas analysis device; and a second exhaust device (72) which exhausts the sampling gas via the gas analysis device.

Description

Sampling gas supply system

[0001] This invention relates to a system for supplying sampled gas to a gas analyzer.

[0002] Japanese Patent Publication No. 2024-050730 describes a system comprising a process chamber in which a plasma process is carried out, a gas analyzer supplied with a sample gas from the process chamber, an exhaust system for exhausting the sample gas through the gas analyzer, and a process control unit that controls at least one process carried out in the process chamber based on the measurement results of the gas analyzer.

[0003] Japanese Patent Publication No. 2008-130755 describes a low-cost means for recording data before and after an abnormality occurs, as well as data for normal operation using the same recipe, at short intervals, in a semiconductor manufacturing apparatus that processes various recipes sequentially. The semiconductor manufacturing apparatus comprises a chamber, a solenoid coil, electrodes, an oscillator, a pressure controller, an emission spectrometer, a DC power supply for the oscillator, an emission spectrometer analyzer, an apparatus controller having apparatus control means, temporary storage means, command means, and recording means, a DC power supply for the solenoid coil, a process gas flow rate controller, an electrostatic adsorption power supply, and a high-frequency bias power supply. The apparatus state is periodically temporarily stored in the temporary storage means, and when an abnormality is detected, data for a predetermined period before and after the abnormality occurs is recorded and retained in the recording means, and similarly, data for normal operation using the same recipe is recorded and retained.

[0004] Japanese Patent Publication No. 2006-045640 describes how to create a stable pressure regardless of temporal fluctuations in the atmosphere inside the processing vessel, and how to guarantee process reproducibility without changing the process recipe in response to installation conditions or aging. In this ALD apparatus, during the preparation time prior to the ALD film deposition process, gas is supplied to the processing vessel from the gas supply unit with a gas load simulating the ALD film deposition process, and the pressure control unit performs APC-type feedback control to identify the valve opening of the conductance valve when the gas pressure inside the processing vessel is approximately equal to the set value as the reference value. Then, during the ALD processing time, the pressure control unit performs feedback control to match the valve opening of the conductance valve to the reference value. This ensures that even if the gas supplied to the processing vessel in the ALD cycle is switched every few seconds, the exhaust conductance is kept constant and the process pressure is maintained stably.

[0005] Japanese Patent Publication No. 2021-086959 describes a method for efficiently removing deposits adhering to the inside of a chamber. The method for creating a cleaning recipe includes an etching step, a measurement step, and a preparation step. In the etching step, for each of a predetermined combination of temperature and pressure, a metal compound laminated on a test substrate brought into the chamber is etched using a cleaning gas supplied into the chamber. In the measurement step, the etching rate of the metal compound is measured for each combination of temperature and pressure. In the preparation step, a cleaning recipe is created that includes temperature and pressure combinations that result in an etching rate equal to or greater than a predetermined value, based on the etching rate of the metal compound measured for each combination of temperature and pressure.

[0006] In semiconductor manufacturing equipment chambers (process chambers), pressure, temperature, gas type, gas flow rate, etc. are controlled based on a recipe (process recipe), and multiple processes are carried out. Accurate monitoring of these processes is required. Emission spectrometers can detect the type of gas in real time if gas emission is observed due to plasma within the chamber. However, emission spectrometers have difficulty performing highly accurate measurements at sub-ppm or ppb levels, and quantitative analysis is also difficult. Furthermore, they are unsuitable for monitoring processes where no emission is observed, such as cleaning.

[0007] Instead of, or in conjunction with, emission spectrometers, mass spectrometer-based gas analyzers have been proposed to detect and monitor numerous processes carried out within a chamber in real time, including precursors, reactants, by-products, or gases containing them (a unified chamber monitoring system / solution).

[0008] One challenge when simultaneously monitoring multiple processes performed in a chamber according to a recipe using a gas analyzer is that the pressure inside the chamber can fluctuate during each process. In thin-film deposition processes, for example, pressures of 100 to 1000 Pa may be selected for CVD (chemical vapor deposition), 0.1 to 10 Pa for PVD (physical vapor deposition), 1 to 100 Pa for etching processes, and 10 Pa for ion implantation processes. －３ ~10 －６ A pressure in Pa may be selected; in resist coating and exposure processes, atmospheric pressure (approximately 101 kPa) may be selected, and in drying processes, a pressure of 100 to 500 Pa may be selected. In ALD (atomic layer deposition) and ALE (atomic layer etching), pressure fluctuations of several tens of Pa are intentionally made over periods of several seconds.

[0009] On the other hand, mass spectrometry type gas analyzers have an ionization process of 10 －３ ~10 －５ The process was performed in Pa, and the mass separation (filtering) was 10 －４ ~10－６ It is often carried out at Pa or below. Therefore, when considering processes that maintain atmospheric pressure inside the process chamber, the difference between the pressure inside the chamber and the pressure inside the gas analyzer is 10 ８ ~10 １０ A pressure difference of approximately Pa may occur. Rapid depressurization may be accompanied by rapid temperature changes, which may result in a difference between the gas composition in the monitored chamber and the gas composition being analyzed by the gas analyzer. Furthermore, delays associated with rapid depressurization may affect the real-time nature of monitoring.

[0010] One aspect of the present invention is a gas supply system that supplies a sampling gas for analysis from a sampling port located downstream of a process chamber or a pressure control mechanism of a process chamber, through which multiple processes are carried out under multiple different pressures, to a gas analyzer. The gas supply system comprises a sampling header through which the sampling gas passes, a first exhaust device that exhausts the sampling gas through the sampling header, a first conductance control device that controls the conductance between the sampling port and the sampling header, a second conductance control device that controls the conductance between the sampling header and the gas analyzer, and a second exhaust device that has a smaller capacity and provides a higher vacuum than the first exhaust device, which exhausts the sampling gas through the gas analyzer.

[0011] This gas supply system, instead of directly connecting the process chamber, which is the source of the sampling gas, to the gas analyzer, which is the destination of the sampling gas, has a sampling header connected between them via a first conductance control device and a second conductance control device at the source and destination. Furthermore, a first exhaust device, which has a larger capacity than the second exhaust device used to exhaust the sampling gas from the gas analyzer, is connected to the sampling header. As a result, a sampling gas flow can be formed in the sampling header at a pressure intermediate between the pressure of the source and the pressure of the destination, with a flow rate sufficient to reflect the gas composition in the process chamber without delay. Therefore, a rapid pressure reduction in the first and second conductance control devices that exist while the sampling gas is supplied from the process chamber to the gas analyzer can be suppressed, and a sufficient flow rate of sampling gas extracted from the process chamber can be ensured to allow for measurement without delay.

[0012] The first conductance control device may include a mechanism for controlling conductance so that the pressure in the sampling header is within a predetermined range, and may be configured to switch the conductance between the sampling port and the sampling header to multiple values ​​in response to multiple processes. The pressure in the process chamber is preset by the recipe of the process executed in the process chamber. For this reason, the first conductance control device may include a configuration that can provide multiple conductance values ​​corresponding to each of the multiple processes, and may be configured to switch based on a selected recipe or the like. Such a first conductance control device can suppress the control delay of the sampling header pressure due to process switching, and can provide real-time monitoring without delay by the gas analyzer, even for processes where the pressure fluctuates rapidly, such as ALD or ALE.

[0013] The second conductance control device may be configured to switch the conductance between the sampling header and the gas analyzer to a plurality of values corresponding to a plurality of processes. In addition, the gas supply system may include a third conductance control device that switches the conductance between the sampling header and the first exhaust device to a plurality of values corresponding to a plurality of processes. The second conductance control device and the third conductance control device, which are capable of switching conductance, can easily cope with, for example, a process in which the pressure in the process chamber is a high vacuum, for example, a process in which the pressure is comparable to the service pressure of the gas analyzer.

[0014] The first exhaust device and the second exhaust device may be connected in series. That is, the first exhaust device may be connected to the exhaust side of the second exhaust device. This gas supply system may be provided with a split-flow (multi-flow) type vacuum pump, typically a turbomolecular pump, that serves as the first exhaust device and the second exhaust device. In this type of vacuum pump, the pump inlet may function as the second exhaust device, and the intermediate port may function as the first exhaust device. The pressure in the sampling header is, for example, 10, which is intermediate between the pressure of the supply source and the pressure of the supply destination －２ to 10 ２ Pa, or 10 －１ Pa or more, or about 10 Pa or less. Although the intermediate port of the turbomolecular pump also depends on the performance of the backing pump, it can be serviced from about 10 －２ Pa, and it is known that when the pressure is 100 Pa or more, the compression ratio and efficiency of the turbomolecular pump are affected. Therefore, a system in which the pressure is reduced from the supply source to a pressure suitable for the intermediate port by the first conductance control device, and further reduced to a pressure suitable for the supply destination by the second conductance control device is an example of the gas supply system.

[0015] This system may have a low-vacuum bypass line connecting a foreline connecting a vacuum pump and a roughing pump to a sampling header, bypassing the first exhaust device. This system may also have a high-vacuum bypass line supplying sampling gas from the sampling port to the gas analyzer, bypassing the first and second conductance control devices. Furthermore, this system may have a calibration gas supply line supplying calibration gas to the gas analyzer.

[0016] Another aspect of the present invention is a monitoring system comprising the gas supply system described above and a gas analyzer. The gas analyzer may include a separator unit that mass-separates the ionized gas from the sampled gas and a detector unit that detects the separated ions.

[0017] Another aspect of the present invention is a system comprising the gas supply system described above and a control unit that switches the conductance between the gas supply system and the sampling header to a plurality of values ​​based on a recipe for controlling a plurality of processes carried out in a process chamber, using a first conductance control device.

[0018] One further different aspect of the present invention is a method for controlling a system through which a sampling gas for analysis is supplied from a process chamber in which multiple processes are carried out under multiple different pressures to a gas analyzer. The system comprises a gas supply system, which includes a sampling header through which the sampling gas passes; a first exhaust device for exhausting the sampling gas through the sampling header; a second exhaust device with a smaller capacity and higher vacuum than the first exhaust device for exhausting the sampling gas through a gas analyzer; a first conductance control device for switching the conductance between the process chamber and the sampling header to multiple values; and a second conductance control device for controlling the conductance between the sampling header and the gas analyzer. The method includes a control unit reconfiguring the gas supply system based on a recipe for controlling multiple processes carried out in the process chamber. Reconfiguration may include switching the conductance value of the first conductance control device based on the recipe. Reconfiguration may also include switching the conductance value of the second conductance control device based on the recipe.

[0019] Furthermore, the gas supply system includes a third conductance control device that controls the conductance between the sampling header and the first exhaust device, and reconfiguration may include switching the conductance value of the third conductance control device based on a recipe. Also, the first conductance control device includes a plurality of on / off valves that switch between a plurality of conductance values, and reconfiguration may include opening and closing at least one of the plurality of on / off valves of the first conductance control device. The gas supply system has a line that supplies calibration gas to the gas analyzer, and the control method may include automatically performing a health check of the gas analyzer based on a recipe.

[0020] One further different aspect of the invention is a control program for a system in which a sample gas for analysis is supplied to a gas analyzer from a process chamber in which multiple processes are carried out under multiple different pressures. The control program includes instructions for reconfiguring the gas supply system based on a recipe for controlling the multiple processes carried out in the process chamber. The control program may be provided on a computer-readable recording medium.

[0021] A diagram illustrating the overview of a semiconductor manufacturing system, including the gas supply system. A diagram showing the configuration of a gas supply system for high-pressure processes. A diagram showing the configuration of a gas supply system for low-pressure processes. A diagram showing the configuration of a gas supply system for medium-pressure processes. A diagram showing the configuration of a gas supply system for extremely low-pressure processes. A flowchart illustrating the overview of the control process. A diagram showing another example of a semiconductor manufacturing system, including the gas supply system. A diagram showing the relationship between process and idle states and monitoring and health checks. A diagram showing an example of drift correction. A flowchart showing an example of ISM control. Embodiment of the Invention

[0022] Figure 1 shows an overview of a manufacturing system 1 that uses a process chamber to manufacture semiconductor products. This manufacturing system 1 includes a process chamber 2 in which multiple processes (plasma processes) such as etching and film deposition processes for manufacturing semiconductor products are carried out, an automatic pressure control device (APC) 3 that controls the internal pressure of the process chamber 2, an exhaust system 4, a tube (duct, piping) 5 connecting the APC 3 and the exhaust system 4, and a process control system 86 that monitors and controls the processes carried out in the process chamber 2. The process control system 86 includes a recipe (process recipe) 51 that stores the conditions for each process, a process controller 50 that controls the conditions in the process chamber 2, such as temperature, pressure, and process gas, based on the recipe 51, and a process monitoring system 85 that analyzes a sampled gas 9 supplied from the process chamber 2 to monitor the internal state of the process chamber 2.

[0023] The recipe 51 used in the semiconductor manufacturing system 1 is a set of instructions for precisely controlling the conditions inside the chamber 2 (temperature, pressure, gas, time, etc.) for each process, and includes information such as the step configuration, gas type and flow rate, step time, pressure, temperature, plasma conditions, and number of steps.

[0024] The process monitoring system 85 includes a gas supply system 80 that supplies a sampling gas 9 for analysis from a sampling port 7 located downstream of a process chamber 2 or APC (pressure control mechanism) 3, where multiple processes are carried out under multiple different pressures based on the recipe 51 as described above, to a gas analyzer 40, and a gas analyzer 40. The gas supply system 80 includes a sampling header (intermediate header, sampling line) 60 through which the sampling gas 9 passes, a first exhaust device 71 that exhausts the sampling gas 9 via the sampling header 60, a first conductance control device 10 that controls the conductance between the sampling port 7 and the sampling header 60, a second conductance control device 20 that controls the conductance between the sampling header 60 and the gas analyzer 40, a second exhaust device 72 that has a smaller capacity and provides a higher vacuum than the first exhaust device 71 that exhausts the sampling gas 9 via the gas analyzer 40, and a sampling controller (sampling control device) 55 that controls the supply path of the sampling gas 9. The process controller 50 may also have the functions of the sampling controller 55. Furthermore, multiple combinations of the second conductance control device 20 and the gas analyzer 40 may be connected to the sampling header 60. The sampling header 60 should be structured in such a way that gas can communicate with the first conductance control device 10 and the second conductance control device 20. In this example, conductance indicates the ease with which a gas flows, and in one example it may be a proportionality constant (conductance C). For the same pressure difference, a larger conductance C results in a larger flow rate, and for the same flow rate, a larger C results in a smaller Δp.

[0025] The first conductance control device 10 may be a pressure control mechanism (pressure control valve) that controls (feedback control) to maintain the pressure (second pressure) P2 of the sampling header 60 at a predetermined pressure, or it may be a pressure control mechanism that controls (feedforward control) by referring to the pressure (first pressure) P1 of the sampling port 7. The first conductance control device 10 may be configured to switch the conductance between the sampling port 7 and the sampling header 60 to multiple values ​​in accordance with multiple processes performed in the process chamber 2, and may include multiple conductance adjustment mechanisms 11, 12 and 13. These conductance adjustment mechanisms may include a conductance adjustment mechanism (HC) 11 that gives a high (large) conductance value, allowing gas to flow easily and a low pressure reduction rate, a conductance adjustment mechanism (LC) 13 that gives a low (small) conductance value, making it difficult for gas to flow and resulting in a high pressure reduction rate, and a conductance adjustment mechanism (MC) 12 that gives an intermediate conductance value and has an intermediate pressure reduction rate. The sampling controller 55 may include a control unit 55a that selects one or more of the conductance adjustment mechanisms 11 to 13 included in the first conductance control device 10, based on the set pressure (target pressure) of the process chamber 2 provided by the process controller 50 based on a recipe 51 that controls multiple processes carried out in the process chamber 2, and switches the conductance between the sampling header 60 and the process chamber 2 to multiple values.

[0026] An example of conductance adjustment mechanism 11-13 is an on-off valve, and the on-off valve itself may have a specific conductance value. Other examples of conductance adjustment mechanisms 11-13 are orifices, slits, valves, etc., having a specific conductance value. Another example of conductance adjustment mechanism 11-13 is a combination of an on-off valve and an orifice, slit, valve, etc., having a specific conductance value. Conductance adjustment mechanisms 11-13 may further be combined with a needle, or they may use a valve with a small CV value, or they may be proportional control valves. Typically, the conductance value of the on-off valve itself is sufficiently larger than that of the orifice, etc. The orifice, slit, valve, etc., having a specific conductance value may be placed before (upstream) or after (downstream) the on-off valve. If a high concentration of gas is expected as the sampling gas 9, the orifice, etc. may be placed downstream of the on-off valve, thereby reducing the risk of the orifice, etc., being exposed to the high concentration of gas and becoming clogged.

[0027] The second conductance control device 20, positioned between the sampling header 60 and the gas analyzer 40, may also include a plurality of conductance adjustment mechanisms and may be configured to switch the conductance between the sampling header 60 and the gas analyzer 40 to a plurality of values ​​in accordance with a plurality of processes. The second conductance control device 20 may include a conductance adjustment mechanism (HC) 21 that provides a large conductance value and a low reduction ratio, and a conductance adjustment mechanism (LC) 22 that provides a small conductance value and a high reduction ratio. The sampling controller 55 may also include a control unit 55b that selects one or more of the plurality of conductance adjustment mechanisms 21 to 22 included in the second conductance control device 20 based on the set pressure of the process chamber 2 provided by the process controller 50 based on the recipe 51, and switches the conductance between the sampling header 60 and the process chamber 2 to a plurality of values.

[0028] The gas supply system 80 may also have a third conductance control device 30 that switches the conductance between the sampling header 60 and the first exhaust device 71 to multiple values ​​in response to multiple processes. The third conductance control device 30 may include a conductance adjustment mechanism (HC) 31 that provides a large conductance value and a low pressure reduction rate, and the control unit 55c of the sampling controller 55 may be configured to switch the use of the conductance adjustment mechanism (HC) 31 on and off (disconnect) based on the set pressure of the process chamber 2 provided by the process controller 50 based on the recipe 51. An example of the conductance adjustment mechanism (HC) 31 is an on / off (shut-off) valve.

[0029] The gas supply system 80 may include a multi-stage exhaust system 70 in which the first exhaust device 71 is connected in series to the exhaust side of the second exhaust device 72. An example of such an exhaust system 70 is a split-flow (multi-flow) vacuum pump (turbomolecular pump, TMP) in which the pump inlet functions as the second exhaust device 72 and the intermediate port 75 functions as the first exhaust device 71. The intermediate port 75 of the turbomolecular pump 70 also depends on the performance of the backing pump, for example, the process exhaust system 4 in this example, but 10 －２ The service is possible from around Pa, but at pressures above 100 Pa, the compression ratio and efficiency of the turbomolecular pump 70 may be affected. For this reason, the turbomolecular pump 70 controls the pressure of the sampling header 60 by the first conductance control device 10 to 10 －２ ~10 ２ Approximately Pa, or 10 －１ In situations where it is possible to control the pressure to approximately Pa or above, or approximately 10 Pa or below, the third conductance control device 30 may be set to the conductance adjustment mechanism (HC) 31, that is, the shut-off valve may be opened (turned on) to provide service to the intermediate port 75. On the other hand, if the internal pressure of the process chamber 2 is extremely low, even if the conductance value of the first conductance control device 10 is controlled, the pressure of the sampling header 60 may be kept at 10 －２When the pressure cannot be maintained at about Pa, the conductance adjustment mechanism (HC) 31 of the third conductance control device 30 may be turned off, that is, the shutoff valve may be closed (turned off) to stop the service of the intermediate port 75.

[0030] The gas analyzer 40 may be a mass spectrometry type analyzer capable of real-time analysis. The gas analyzer 40 may include an ionization device 41 that ionizes the sampling gas 9, a separator unit 42 that performs mass separation on the ionized gas, and a detector unit 43 that detects the separated ions. The separator unit 42 may be a TOF type, a quadrupole filter, or an ion trap, and any other device that can separate ionized gas by mass-to-charge ratio and detect it with the detector 43 may be adopted. In the semiconductor process that is the monitoring target of the monitoring system 85, highly corrosive gases are used in etching processes, cleaning processes, and the like. Therefore, it is desirable that the gas analyzer 40 be capable of highly accurate measurement with the sampling gas 9 of the smallest possible volume in order to suppress a decrease in durability due to corrosion.

[0031] FIGS. 2 to 5 show several examples of reconfiguring the gas supply system 80 based on the internal pressure of the process chamber 2 set (controlled) by the process recipe 51. FIG. 2 shows the configuration of the gas supply system 80 corresponding to a process in which the internal pressure of the process chamber 2 is set to a relatively high value based on the recipe 51. The sampling controller 55 selects the conductance adjustment mechanism (LC) 13 with a low conductance value in the first conductance control device 10 that controls the conductance between the sampling port 7 and the sampling header 60, selects the conductance adjustment mechanism (LC) 22 with a low conductance value in the second conductance control device 20 that controls the conductance between the sampling header 60 and the gas analyzer 40, and selects the conductance adjustment mechanism (HC) 31 with a high conductance value in the third conductance control device 30 that controls the conductance between the sampling header 60 and the intermediate port 75 of the turbomolecular pump 70.

[0032] In the first conductance control device 10, a conductance adjustment mechanism (LC) 13 having a conductance value such that the pressure P2 of the sampling header 60 becomes a pressure at which the intermediate port 75 can be serviced is selected with respect to the internal pressure of the process chamber 2 (the pressure P1 of the sampling port 7) set by the recipe 51. In the second conductance control device 20, with respect to the pressure P2 of the sampling header 60 set to be a pressure at which the intermediate port 75 can be serviced, the inlet pressure of the gas analyzer 40 is set to the operating pressure of the gas analyzer 40, for example, 10 －３ to 10 －５ A conductance adjustment mechanism (LC) 22 having a conductance value such that the pressure becomes Pa is selected. In the third conductance control device 30, a conductance adjustment mechanism (HC) 31 having a large conductance value is selected so that the intermediate port 75 can be fully serviced, and typically a configuration that does not include means such as an orifice for controlling conductance is selected.

[0033] When the first conductance control device 10 includes a plurality of pipes or orifices with different conductance values, and a plurality of on-off valves for opening and closing the respective pipes, the sampling controller 55 reconfigures the gas supply system 80 by opening and closing one or more of the plurality of on-off valves so as to provide conductance suitable for each case (mode, pressure). The same applies to the second conductance control device 20 and the third conductance control device 30.

[0034] Figure 3 shows the configuration of the gas supply system 80 corresponding to a process in which the internal pressure of the process chamber 2 is set to a relatively low value based on recipe 51. The sampling controller 55 selects a conductance adjustment mechanism (HC) 11 with a high conductance value in the first conductance control device 10, a conductance adjustment mechanism (LC) 22 with a low conductance value in the second conductance control device 20, and a conductance adjustment mechanism (HC) 31 with a high conductance value in the third conductance control device 30. In the first conductance control device 10, a conductance value is selected such that the pressure P2 of the sampling header 60 is constant or nearly constant with respect to the pressure of the sampling port 7. For this reason, the second conductance control device 20 may adopt a configuration similar to that shown in Figure 2. In controlling the conductance value of the first conductance control device 10, if the pressure P2 of the sampling header 60 fluctuates within a certain range relative to the pressure set by the recipe 51, the sampling controller 55 may switch the conductance value of the second conductance control device 20 to a conductance suitable for the pressure P2 of the sampling header 60 planned based on the recipe 51.

[0035] Figure 4 shows the configuration of the gas supply system 80 corresponding to a process in which the internal pressure of the process chamber 2 is set to an intermediate value in the process described above, based on recipe 51. The sampling controller 55 selects the conductance adjustment mechanism (MC) 12 with an intermediate conductance value in the first conductance control device 10, the conductance adjustment mechanism (LC) 22 with a low conductance value in the second conductance control device 20, and the conductance adjustment mechanism (HC) 31 with a high conductance value in the third conductance control device 30. In the first conductance control device 10, a conductance value is selected such that the pressure P2 of the sampling header 60 is constant or nearly constant with respect to the pressure of the sampling port 7. For this reason, the second conductance control device 20 may adopt a configuration similar to that shown in Figure 2.

[0036] Figure 5 shows that, based on recipe 51, the internal pressure P1 of the process chamber 2 is extremely low, for example, 10 －３ The configuration of the gas supply system 80 corresponding to a process set to around or below Pa is shown. The sampling controller 55 selects a conductance adjustment mechanism (HC) 11 with a large conductance value in the first conductance control device 10, and a conductance adjustment mechanism (HC) 21 with a large conductance value in the second conductance control device 20. The third conductance control device 30 may be configured to select a conductance adjustment mechanism with a small conductance value if the internal pressure P1 of the process chamber 2 is a pressure that can be served at the intermediate port 75, but if the pressure is such that it can be served at the intermediate port 75, the third conductance control device 30 is configured to disconnect the connection (fluidic connection) with the sampling header 60.

[0037] In this way, the gas supply system 80 is reconfigured to maintain a constant or nearly constant pressure P2 in the sampling header 60, except for extremely low-pressure processes, in response to the fluctuating internal pressure P1 of the process chamber 2 caused by various processes, so that the intermediate port 75 of the turbomolecular pump 70 reaches a serviceable pressure. More specifically, the gas supply system 80 maintains a constant or nearly constant pressure P2 in the sampling header 60 by switching the conductance values ​​of the first conductance control device 10 and the second conductance control device 20 based on the information in the recipe 51, so that a sufficient flow rate of sampling gas 9 can be extracted from the sampling port 7 through the sampling header 60 and through the intermediate port 75. This suppresses sampling delays in the gas analyzer 40.

[0038] Considering that the numerous processes carried out in the process chamber 2 based on recipe 51 include, for example, in the film deposition process, pressures of 100 to 1000 Pa are set for CVD (chemical vapor deposition) and 0.1 to 10 Pa for PVD (physical vapor deposition), pressures of 1 to 100 Pa are set for the etching process, and atmospheric pressure (approximately 101 kPa) is set for the resist coating and exposure processes, the gas analyzer 40 is set for the ionization process at 10 －３ ~10 －５ The process was performed in Pa, and the mass separation (filtering) was 10 －４ ~10 －６ Considering that the procedure is performed at Pa or below, the pressure inside chamber 2 and the pressure inside gas analyzer 40 are 10 ８ ~10 １０ A pressure difference of approximately Pa may occur. Furthermore, from the viewpoint of minimizing corrosion, it is desired that the gas analyzer 40 be supplied with an extremely small amount of sampling gas 9, for example, 0.025 sccm or less. When attempting to obtain an extremely low-pressure sampling gas 9 with an extremely small amount relative to the internal pressure P1 of the process chamber 2, problems such as fluctuations in sampling conditions due to rapid depressurization and temperature drop, clogging, and sampling delays may arise.

[0039] In this gas supply system 80, the first conductance control device 10 maintains the pressure in the sampling header 60 at a pressure that allows the intermediate port 75 of the turbomolecular pump 70 to serve, and the second conductance control device 20 maintains the pressure supplied to the gas analyzer 40 from the sampling header 60. Therefore, it is possible to independently control the pressure on the upstream and downstream sides of the sampling header 60, thereby suppressing the occurrence of malfunctions caused by rapid pressure reduction when supplying the sampling gas 9 to the gas analyzer 40. Furthermore, because the intermediate port 75 of the turbomolecular pump 70 is serviceable from the sampling header 60, it is possible to independently control the flow rate from the sampling port 7 to the sampling header 60 and the flow rate from the sampling header 60 to the gas analyzer 40. Therefore, it is possible to extract a flow rate (for example, 5 sccm or less) several tens to several hundreds of times greater than that supplied to the gas analyzer 40 from the sampling port 7, thereby suppressing problems such as sampling delays and clogging. Furthermore, in ALD (atomic layer deposition) and ALE (atomic layer etching), different pressures of several tens of Pa or more are set in intervals of a few seconds. By reconfiguring the gas supply system 80 based on recipe 51 for controlling such pressure settings, the impact of process pressure fluctuations on the measurement system can be minimized. As a result, the state of the process taking place in the process chamber 2 can be monitored accurately and in real time.

[0040] Figure 6 shows an example of a control method for a semiconductor manufacturing system 1 including a gas analyzer 40. The process controller 50 of the process control system 86 that controls the semiconductor manufacturing system 1 sets the conditions of the process chamber 2 according to the recipe 51 and controls the semiconductor manufacturing process 100. In step 101, the process controller 50 sets the conditions of the process chamber 2, such as temperature, pressure, gas, plasma conditions, step time, number of steps, etc., according to the recipe 51, and in step 102, executes the process inside the process chamber 2. In step 103, the process is terminated when a predetermined number of steps have elapsed or when the endpoint conditions are obtained from the gas analysis results including reactants or by-products obtained from the process monitoring system 85, and in step 104, if there is a next process, the process proceeds to the next process according to the recipe.

[0041] The sampling controller 55 of the process monitoring system 85 controls the process 110, which monitors the process by reconfiguring the gas supply system 80 based on the recipe 51 information obtained from the process controller 50. In step 111, when the process controller 50 notifies the gas supply system 80 of a change in the recipe and a change in the pressure in the process chamber 2, the gas supply system 80 is reconfigured in step 112. Specifically, in step 121, the conductance value of the first conductance control device 10 is set based on the changed recipe 51, in step 122, the conductance value of the second conductance control device 20 is set based on the changed recipe 51, and in step 123, the conductance value of the third conductance control device 30 is set based on the changed recipe 51. In step 113, the gas analyzer 40 analyzes the sampled gas 9 provided from the gas supply system 80, and in step 114, the analysis results are fed back to the process controller 50.

[0042] The control steps described above are outlines, and the pressure P1 at the sampling port 7 may be monitored with a pressure gauge, and if the pressure becomes unexpected, control may be performed to close all valves. The pressure P2 at the sampling header 60 may also be monitored with a pressure gauge to confirm that the pressure at the sampling header 60 is always constant. Furthermore, the entire gas supply system 80 may have a structure that allows for heating and temperature maintenance. In addition, the sampling port 7 may be installed in the process chamber 2, or it may be located downstream of the APC 3, which is the pressure control mechanism of the process chamber 2. The process performed in the process chamber 2 is not limited to semiconductor manufacturing processes, but may include other processes, such as plasma processes or thin-film deposition processes, such as coating processes for optical instruments. Furthermore, the process controller 50 and the sampling controller 55 may be control mechanisms that include computer resources, and the above control may be provided as a program (program product) containing instructions for executing each step on a computer, recorded on a suitable recording medium.

[0043] Figure 7 shows a different example of a system (manufacturing system) 1 for manufacturing semiconductor products using a process chamber. This manufacturing system 1 includes a process chamber 2, an APC 3, an exhaust system 4, a tube 5 connecting the APC 3 and the exhaust system 4, a process control system 86, and a process monitoring system 85. The process monitoring system 85 includes a gas supply system 80 and a gas analyzer 40. The gas supply system 80 in this example includes an intelligent sampling module (ISM) 83 including a sampling header 60 through which a sampling gas 9 passes, a first exhaust device 71 that exhausts the sampling gas 9 via the sampling header 60, a second exhaust device 72 that is smaller in volume and provides a higher vacuum than the first exhaust device 71 and exhausts the sampling gas 9 via the gas analyzer 40, and an ISM controller 54 that includes the functions of a sampling controller 55.

[0044] The Intelligent Sampling Module (ISM) 83 functions as a front-end interface for a gas analyzer 40 used in semiconductor process and packaging environments. The ISM 83 is a compact front-end interface designed to collect gas samples 9 from wafer manufacturing equipment (e.g., before and after the process chamber 2, tool foreline 5, and dry pump) and supply them to the gas analyzer 40. The ISM 83 fully automatically adapts to various process cycles using pressure signals from the process control system (process tool) 86.

[0045] The basic configuration of ISM83 is the same as that of the gas supply system 80 described above, and includes a sampling header 60 through which the sampling gas 9 passes, a first conductance control device 10 that controls the conductance between the sampling port 7 and the sampling header 60, a second conductance control device 20 that controls the conductance between the sampling header 60 and the gas analyzer 40, and a third conductance control device 30 that switches the conductance between the sampling header 60 and the first exhaust device 71 to multiple values.

[0046] The first conductance control device 10 may include a plurality of conductance adjustment mechanisms, for example, a conductance adjustment mechanism (HC) 11 that provides a high conductance value, a conductance adjustment mechanism (LC) 13 that provides a low conductance value, and a conductance adjustment mechanism (MC) 12 that provides an intermediate conductance value. Each of the conductance adjustment mechanisms 11, 12, and 13 may include orifices 11b, 12b, and 13b, and valves 11a, 12a, and 13a that switch between them. The second conductance control device 20 may include a plurality of conductance adjustment mechanisms, for example, a conductance adjustment mechanism (HC) 21 that provides a large conductance value and a conductance adjustment mechanism (LC) 22 that provides a small conductance value. Each of the conductance adjustment mechanisms 21 and 22 may include orifices 21b and 22b and valves 21a and 22a that switch between them.

[0047] The third conductance control device 30 may include a conductance adjustment mechanism (HC) 31 that provides a large conductance value. The ISM 83 further includes a low-vacuum bypass line 34 that connects a foreline 79 connecting a turbomolecular pump (TMP) 70, which is the first exhaust device 71, to an exhaust system 4, which is a roughing pump, to the sampling header 60, bypassing the TMP 70. It also includes valves 31a and 33a that switch the exhaust destination of the sampling header 60 between the TMP 70 and the exhaust system 4. The sampling controller 55 includes control units 55a, 55b and 55c configured to select one or more of the conductance adjustment mechanisms included in these conductance control devices 10, 20 and 30, based on the set pressure (target pressure) of the process chamber 2 provided by the process controller 50 based on the recipe 51, and to switch the conductance between the sampling header 60 and the foreline 79 to a plurality of values.

[0048] ISM83 may further include a high-vacuum bypass line 15 that bypasses the first conductance control device 10 and the second conductance control device 20 to supply the sampling gas 9 from the sampling port 7 to the gas analyzer 40, and a valve 16a for switching this bypass line 15 on and off. This bypass line 15 bypasses the sampling header 60 and directly connects the process chamber 2 and the gas analyzer 40. When the set pressure of the process performed in the process chamber 2 is close to a high vacuum and is about the same as the internal pressure of the gas analyzer 40, pressure control by the conductance control devices 10 and 20 is unnecessary, and by selecting this bypass line 15, the sampling gas 9 can be stably supplied from the process chamber 2 to the gas analyzer 40. The sampling controller 55 may include a control unit 55d configured to select the bypass line 15 based on the set pressure of the process chamber 2.

[0049] The ISM83 may further include a calibration gas supply device (gas supply line) 25 that supplies a standard gas, such as PFTBA (perfluoroterbutylamine) 27, for calibrating the horizontal axis (mass axis) and / or a reference gas, such as nitrogen or argon gas 28, for calibrating the vertical axis (sensitivity) to the gas analyzer 40. The calibration gas supply device 25 may include a gas source 26 and a valve 25a for turning the supply line 25 on and off.

[0050] The ISM83 may include functions to bridge the gap between the high-pressure process and the high-vacuum environment of the mass spectrometer filter, to automate the system 85 including the gas analyzer 40 and adapt to fluctuating process pressures in real time, to minimize the transport time of the sampling gas 9 for real-time process control, a calibration function using a reference gas, a function to maintain chemical fidelity (no adsorption or desorption), and an interlock function for pressure fluctuations and abnormal valve conditions. For this reason, the ISM83 may consist of appropriate actuators, such as a network of pneumatically driven valves, or a heated manifold with a heater 39, to establish a flow path that provides an optimal response for real-time monitoring of process cycles under different pressures. The ISM83 shown in Figure 7 includes a total of nine valves, but the number of these valves may vary depending on the system applied, or an appropriate number of valves from the default set may be used. These valves may have a function to control the pressure via a downstream orifice of a specific diameter, and may automatically control the flow rate.

[0051] The ISM controller 54 may include several control units (control unit, control function, control section, controller) for implementing the above functions in the ISM 83. In this example, the ISM controller 54 includes a sampling controller 55, an interlock protection controller 56, a drift compensation controller 57, a self-maintenance controller 58, and a temperature control controller 59. As described above, the sampling controller 55 controls the conductance control devices 10, 20, 30 and the bypass 15 to achieve feedforward dynamic pressure management. That is, the sampling controller 55 makes it possible to pre-set in the ISM 83, based on the information in the recipe 51, the conditions for supplying the sampling gas 9 from the process chamber 2, for example, a wafer hub equipment (WFE), to the gas analyzer 40 under fluctuating pressure conditions, enabling real-time sample extraction from the process chamber 2. In the ISM 83 of this example, depending on the process pressure, it can be configured to use up to eight or nine low dead-volume valves, and an orifice of a specific diameter can be installed downstream of each valve to control the flow rate in order to achieve an optimal response time. Therefore, the flow path of the ISM83 can be dynamically adjusted by dynamically selecting (specifying) the conductance control devices 10, 20, 30 and bypass 15 of the ISM83 based on the recipe 51 of the process chamber (WFE). In addition, the process sample pressure can be reduced and made compatible with the operating pressure of the gas analyzer 40. Furthermore, the ISM83 can provide both continuous sampling and triggered sampling (event / recipe driven). One example of an acceptable sample pressure range in the ISM83 is 1 to 100 torr, and the requirements (quantity) of valves constituting the ISM83 may be reduced when the sample pressure range is narrow or when the pressure is fixed.

[0052] The interlock protection controller 56 protects the process side, including the process chamber 2, and the gas analyzer 40 by automatically shutting off all valves of the ISM 83 when it detects any pressure anomaly. For example, if the pressure value of the process chamber 2 is available, the gas analyzer 40 can be reliably protected from pressure anomalies such as the detection of an unexpected pressure spike including that value, or the detection of an abnormal condition in a valve included in the ISM 83.

[0053] The drift correction controller 57 calibrates (corrects) the mass axis (horizontal direction, horizontal axis) and sensitivity (vertical direction, vertical axis) of the output of the gas analyzer 40 when idle. Therefore, calibration (health check) of the gas analyzer 40 can be performed and accuracy maintained without stopping the process side (WFE), including the processing of the process chamber 2.

[0054] Figure 8 shows an example of a process performed in process chamber 2. In process chamber 2, intermittent processes (pulsed processes) 151 in which process gas is supplied in pulses of several seconds, such as ALD (atomic layer deposition) and ALE (atomic layer etching), and continuous processes 152 in which process gas is supplied continuously are performed, but there may be idle states 155 in between when the process is paused. In ISM 83, the ISM controller 54 can determine in advance whether it is idle state 155, intermittent process 151 is performed, or continuous process 152 is performed, based on instructions (signals) from process controller 50 based on recipe 51. For this reason, the ISM controller 54 can set ISM 83 to perform a health check including drift correction in the gas analyzer 40 in accordance with idle state 155, and can maintain measurement accuracy during the monitoring period 161 in which operation as a process monitor is required. Therefore, in this process monitoring system 85, which includes the ISM 83 and the analyzer 40, the accuracy (sensitivity) of the gas analyzer 40 can be maintained at a consistently high level without impairing its function as a process monitor, thereby providing a highly accurate and stable monitoring environment.

[0055] Figure 9 shows an example of drift correction. The drift correction controller 57 performs drift correction when in idle state 155 by switching the valve of the ISM 83 and supplying calibration gases 27 and 28 from the calibration gas supply device 25 to the gas analyzer 40. In order to obtain a predetermined measurement accuracy, the gas analyzer 40 may perform processes such as calculating a baseline correction value using the ion current value when there is no signal and correcting the baseline during actual measurement (baseline offset), adjusting the mass axis (m / z) and the peak width (FWHM) (mass axis calibration and resolution tuning), adjusting the relative intensity between each peak to a reference ratio and keeping the relative intensity between devices constant (matching between gas analyzers), adjusting the ion current value of the standard peak to a reference value and keeping the intensity within the device constant (SEM (secondary electron multiplier tube), voltage adjustment), calculating the SEM gain from the ion current values ​​in FC (Faraday cup) mode and SEM mode (SEM gain correction), and correcting the mass axis and sensitivity (ion current value / pressure) (drift correction).

[0056] In ISM83, among these processes, the health check 165 corresponding to the idle state 155 allows baseline offset, SEM gain correction, drift correction, etc. to be performed in the idle state, preventing a decrease in measurement accuracy due to various factors such as aging. In drift correction, for example, a high molecular weight standard gas (PFTBA) 27 is introduced from the calibration gas supply device 25 to the gas analyzer 40, and a scan is performed under specified conditions to adjust the FWHM of each peak, for example, peak Pt, to a standard value, and the m / z (mass axis) of each peak to a standard value (within a predetermined error). This allows for correction of drift in the mass axis.

[0057] Next, under constant pressure, a low molecular weight reference gas, such as an inert gas 28 like argon or nitrogen, is introduced from the calibration gas supply device 25 into the gas analyzer 40 for measurement. Sensitivity drift can be corrected by adjusting the SEM gain so that the ion current value / pressure becomes the standard sensitivity. Through these processes, the state of the gas analyzer 40 can be restored from the aged and degraded state 167 shown in Figure 9 to a state 168 adjusted to a predetermined accuracy. In ISM83, the supply of calibration (test) gases 27 and 28 from the calibration gas supply device 25 can be performed with all valves in the line connected to the process chamber 2 closed. Therefore, stability can be ensured without causing backflow of these calibration gases.

[0058] The drift correction controller 57 may also have a function as a cycle accurate calibration (CAC). In pulse processes 151 such as ALD and ALE, idle time may occur between each pulsed process (cycle). Therefore, if this idle time between cycles is effective for drift correction, the accuracy of the gas analyzer 40 can be maintained at an even higher level by performing drift correction for each cycle. Also, if the use of high-mass calibration materials such as PFTBA is restricted in this state, a low-mass component (H) may be used. ２ O, N ２ Drift correction may be performed using (Ar, etc.).

[0059] The self-maintenance controller 58 provides a self-maintenance mode. This mode allows for standalone calibration of the gas analyzer 40 without removing it from the ISM 83 or changing the tool setup, provided the process idle time 155 is sufficiently long. For vacuum and leak checks, valves 31a and 33a can be used to switch the connection to an external dry pump or to a foreline 79 connected to the exhaust system 4. This minimizes downtime and simplifies routine maintenance.

[0060] The temperature control controller 59 maintains the temperature state of the ISM 83 using the heater 39, allowing it to function as a heated sampling module. This establishes a flow path that provides an optimal response for real-time monitoring of process cycles under different pressures.

[0061] Figure 10 shows an example of a control method for a process monitoring system 85, including an ISM 83 and a gas analyzer 40. The ISM controller 54 can determine whether the process has started or is idle based on information (recipe information) from the process controller 50. Therefore, in this control method 140, when the process is started in step 141, as explained in Figure 6, in step 112 the sampling controller 55 reconfigures the ISM 83, which functions as a gas supply system 80, based on the information from recipe 51, and starts appropriate pressure control for sampling. Furthermore, in step 113, the gas analyzer 40 analyzes the sampling gas 9 provided from the gas supply system 80 (ISM 83), and in step 114, the analysis results are fed back to the process controller 50.

[0062] In step 142, if the ISM controller 54 determines that the process is idle and a health check is possible, it performs a health check in step 130. The health check may be performed by the drift compensation controller 57, which may perform calibration (drift compensation) 131 including adjustment of the mass axis and sensitivity, or CAC 132, based on the scheduled idle time, the settings of the ISM controller 54, and / or the requirements of recipe 51, or by the self-maintenance controller 58, which may perform self-maintenance 133.

[0063] Furthermore, if the ISM controller 54 detects a pressure anomaly in step 143, in parallel with these processes, the interlock protection controller 56 shuts off each valve of the ISM 83 in step 144. The ISM controller 54 may be a control mechanism that includes computer resources, similar to the process controller 50, and the above control may be provided as a program (control program, program product) containing instructions for executing each step on a computer, recorded on a suitable recording medium.

[0064] Furthermore, in this example, the process carried out in the process chamber 2 is not limited to semiconductor manufacturing processes, but may be other processes, such as plasma processes or film deposition processes, including coating processes for optical instruments. Also, although the above description uses a mass spectrometry type gas analyzer 40 as an example, other types of gas analyzers, such as an emission spectrometer (OES) that includes plasma generation, may be used, or a hybrid gas analyzer combining multiple types of sensors may be used.

[0065] Furthermore, although specific embodiments of the present invention have been described above, various other embodiments and variations can be conceived by those skilled in the art without departing from the scope and spirit of the invention, and such other embodiments and variations are subject to the following claims, and the present invention is defined by the following claims.

Claims

1. A gas supply system that supplies a sampling gas for analysis from a process chamber in which multiple processes are carried out under multiple different pressures or from a sampling port located downstream of a pressure control mechanism of the process chamber to a gas analyzer, comprising: a sampling header through which the sampling gas passes; a first exhaust device for exhausting the sampling gas through the sampling header; a first conductance control device for controlling the conductance between the sampling port and the sampling header; a second conductance control device for controlling the conductance between the sampling header and the gas analyzer; and a second exhaust device with a smaller capacity and higher vacuum than the first exhaust device for exhausting the sampling gas through the gas analyzer.

2. The gas supply system according to claim 1, wherein the first conductance control device is configured to switch the conductance between the sampling port and the sampling header to a plurality of values ​​in accordance with the plurality of processes.

3. The gas supply system according to claim 1, wherein the second conductance control device is configured to switch the conductance between the sampling header and the gas analyzer to a plurality of values ​​in accordance with the plurality of processes.

4. The gas supply system according to claim 1, further comprising a third conductance control device that switches the conductance between the sampling header and the first exhaust device to a plurality of values ​​in accordance with the plurality of processes.

5. A gas supply system according to claim 1, wherein the first exhaust device is connected to the exhaust side of the second exhaust device.

6. A gas supply system according to claim 1, comprising a split-flow type vacuum pump, wherein the pump inlet functions as the second exhaust device and the intermediate port functions as the first exhaust device.

7. The gas supply system according to claim 6, comprising a foreline connecting the vacuum pump and the roughing pump and the sampling header, with a low-vacuum bypass line connecting them while bypassing the first exhaust device.

8. The gas supply system according to claim 1, further comprising a high-vacuum bypass line that bypasses the first conductance control device and the second conductance control device to supply the sampling gas from the sampling port to the gas analyzer.

9. The gas supply system according to claim 1, comprising a calibration gas supply line for supplying calibration gas to the gas analyzer.

10. A monitoring system comprising the gas supply system described in claim 1 and the gas analyzer.

11. The monitoring system according to claim 10, wherein the gas analyzer includes a separator unit for mass-separating the ionized gas of the sampled gas, and a detector unit for detecting the separated ions.

12. A system comprising: a gas supply system according to claim 1; and a control unit that switches the conductance between the sampling header and the gas supply system to a plurality of values ​​based on a recipe for controlling the plurality of processes carried out in the process chamber, using the first conductance control device.

13. A method for controlling a system through which a sampling gas for analysis is supplied to a gas analyzer from a process chamber in which multiple processes are carried out under multiple different pressures, the system comprising a gas supply system, the gas supply system comprising: a sampling header through which the sampling gas passes; a first exhaust device for exhausting the sampling gas through the sampling header; a second exhaust device with a smaller capacity and higher vacuum than the first exhaust device for exhausting the sampling gas through the gas analyzer; a first conductance control device for switching the conductance between the process chamber and the sampling header to multiple values; and a second conductance control device for controlling the conductance between the sampling header and the gas analyzer, the method comprising a control unit reconfiguring the gas supply system based on a recipe for controlling the multiple processes carried out in the process chamber.

14. A control method wherein the reconfiguration in claim 13 includes switching the conductance value of the first conductance control device based on the recipe.

15. The control method according to claim 13, wherein the reconfiguration includes switching the conductance value of the second conductance control device based on the recipe.

16. The gas supply system according to claim 13, comprising a third conductance control device for controlling the conductance between the sampling header and the first exhaust device, wherein the reconfiguration includes switching the conductance value of the third conductance control device based on the recipe.

17. The control method according to claim 13, wherein the first conductance control device includes a plurality of on-off valves for switching a plurality of conductance values, and the reconfiguration includes opening and closing at least one of the plurality of on-off valves of the first conductance control device.

18. The control method according to claim 13, wherein the gas supply system has a line for supplying calibration gas to the gas analyzer, and the control unit automatically performs a health check of the gas analyzer based on the recipe.

19. A control program for a system through which a sampling gas for analysis is supplied to a gas analyzer from a process chamber in which multiple processes are carried out under multiple different pressures, wherein the system comprises a gas supply system, the gas supply system comprising: a sampling header through which the sampling gas passes; a first exhaust device for exhausting the sampling gas through the sampling header; a second exhaust device with a smaller capacity and higher vacuum than the first exhaust device for exhausting the sampling gas through the gas analyzer; a first conductance control device for switching the conductance between the process chamber and the sampling header to multiple values; and a second conductance control device for controlling the conductance between the sampling header and the gas analyzer, wherein the control program comprises instructions for reconfiguring the gas supply system based on a recipe for controlling the multiple processes carried out in the process chamber.

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