Microwave heat treatment apparatus for uniform heating

Abstract

The present invention relates to a microwave heat treatment apparatus for uniformly heating a semiconductor substrate. The microwave heat treatment apparatus comprises: a processing chamber having a predetermined space therein; a microwave generation unit, disposed outside the processing chamber, for generating microwaves; and a waveguide having one end connected to the microwave generation unit and the other end inserted into the processing chamber, wherein a reflective member configured to reflect the microwaves is provided at an inner end of the other end, an internal space of a portion of the waveguide inserted into the processing chamber is partitioned by at least one partition member, and each of the spaces partitioned by the at least one partition member is filled with a dielectric material, such that the microwaves generated by the microwave generation unit are transmitted into the processing chamber through the dielectric material to heat a substrate disposed in the processing chamber. The present invention was developed through the Next-Generation Leading Technology Development Project (project title: "Development of Plasma Etching Equipment for Diamond Etching Using Pulsed Self-Bias"), which was carried out from October 1, 2023 to May 31, 2025 with support from Daegu Technopark.

Description

Microwave heat treatment device for uniform heating

[0001] [Cross-reference to related applications]

[0002] This application claims priority to Korean Patent Application No. 10-2025-0050384 filed on April 17, 2025, the entire contents of which are incorporated by reference into this application.

[0003] The present invention relates to a microwave heat treatment device, and more specifically, to a microwave heat treatment device for uniform heating capable of uniformly heating a semiconductor substrate.

[0004] [Explanation of Supported R&D]

[0005] This research was conducted with the support of the Next Generation Leading Technology Development Project (Project Name: Development of Plasma Etching Equipment for Diamond Etching Using Pulsed Self Bias), which was supervised by Daegu Technopark from October 1, 2023 to May 31, 2025.

[0006] After microwave ovens utilizing the principle of microwave heating, which generates heat through molecular motion and ion conduction in dielectrics through the action of electromagnetic waves of 300 MHz to 300 GHz, were commercialized, applications for industrial use were studied, and microwave heat treatment devices are currently being utilized in various fields.

[0007] The industrial fields in which it is used include vulcanization, drying, sterilization / insecticide, bonding, cross-linking, corrosion prevention (curing), reaction acceleration, degreasing, calcination, and heat treatment (annealing).

[0008] Materials that are heated include rubber, food, wood, chemicals, ceramics, and semiconductor substrates.

[0009] Conventional heating methods using heat transfer media such as hot air or hot water raise the temperature by transferring heat energy into the interior of the material through heat conduction, in which the surface constituent atoms of the target material transfer thermal energy obtained from the atoms of the contact heat transfer media to nearby atoms.

[0010] In this reaction, if the substance is a fluid, a change in density occurs with temperature, leading to heat transfer due to convection.

[0011] Infrared rays and microwaves, which do not use a heat medium, reach the surface of a material at the speed of light as electromagnetic waves that radiate and propagate. However, since the depth of penetration into the material is inversely proportional to the frequency, there is a difference in that infrared rays are absorbed by surface atoms and converted into thermal energy, whereas microwaves penetrate deep into the material and are converted into thermal energy within the material's constituent molecules.

[0012] Therefore, when heating industrial target materials with 3D structures, microwaves have the advantage of being able to heat evenly to the interior compared to other heating methods.

[0013] Meanwhile, the annealing process in semiconductor manufacturing is used for the rearrangement of amorphous materials, the removal of defects in crystalline materials, and the removal and recrystallization of defects in dopants of amorphous or crystalline materials.

[0014] These heat treatment processes include furnace processes, Rapid Thermal Process (RTP), flash heat treatment processes, and laser heat treatment processes.

[0015] However, since the furnace process is a uniform heat treatment process performed at a high temperature of 800°C to 1100°C, the uniform heat treatment process within a semiconductor device in which various materials with different temperature characteristics are mixed has the problem of degrading the overall yield and performance of the semiconductor device.

[0016] The rapid thermal processing process, like the furnace process, is performed at a high temperature of 800°C to 1100°C, which causes problems such as degradation of the semiconductor material's performance and unwanted dopant diffusion into surrounding materials.

[0017] In addition, flash heat treatment and laser heat treatment processes involve the boundary of the impurity region shifting during the heat treatment process. Although the area within the laser spot size of several millimeters in diameter is activated, it is much smaller than the total area required for activation on the wafer surface. Consequently, there is the inconvenience of having to perform the heat treatment process multiple times while shifting each time to cover the entire doped area. Furthermore, reproducibility and mass production capabilities are limited because the uniformity of the heat treatment in the depth direction is not ensured. As a result, pattern effects occur where areas overlap or are omitted when a pattern is formed, leading to a problem of reduced productivity caused by these pattern effects.

[0018] To solve these problems, conventional heat treatment processes are performed using microwaves.

[0019] This microwave-based heat treatment process can improve the performance of semiconductor devices due to the low process temperature, minimize unwanted diffusion, and enable the use of semiconductor processes such as heat treatment of dielectric materials containing metals (e.g., Al, Ni, etc.) that could not be used in heat treatment processes above 800°C.

[0020] In addition, the heat treatment process using microwaves offers advantages not only in the change of the material's state caused by the increase in the sample's thermal temperature but also in process effects resulting from non-thermal influences caused by the kinetic energy of sample atoms affected by microwaves.

[0021] As mentioned above, when performing a heat treatment process using microwaves, it is necessary to uniformly radiate microwaves onto the target material to heat the target material uniformly.

[0022] The present invention was devised to solve the conventional problems described above, and aims to provide a microwave heat treatment device for uniform heating that divides the interior of a waveguide into multiple sections and fills each section with a dielectric material to enable uniform heating of a semiconductor substrate.

[0023] Another objective of the present invention is to provide a microwave heat treatment apparatus for uniform heating that can uniformly heat a semiconductor substrate by varying the position of a microwave reflection member formed at the inner end of a waveguide.

[0024] A microwave heat treatment device for uniform heating according to the present invention for achieving the aforementioned purpose comprises: a processing chamber having a certain space inside; a microwave generating unit installed outside the processing chamber to generate microwaves; and a waveguide having one end connected to the microwave generating unit and the other end inserted into the processing chamber, wherein a reflective member that reflects microwaves is provided at the inner end of the other end, wherein the anti-node position of microwaves transmitted into the processing chamber through an opening formed on one surface of the waveguide is varied by changing the position of the reflective member, the internal space of the portion inserted into the processing chamber is divided by at least one dividing member, and each space divided by the dividing member is filled with a dielectric material, thereby transmitting microwaves generated by the microwave generating unit into the processing chamber through the dielectric material to heat a substrate placed inside the processing chamber.

[0025] In addition, the microwave heat treatment device for uniform heating according to the present invention is characterized in that an opening is formed on one side of a portion inserted into the processing chamber corresponding to the position of a substrate disposed within the processing chamber to transmit microwaves into the processing chamber.

[0026] In addition, in the microwave heat treatment device for uniform heating according to the present invention, each space divided by the dividing member is characterized by being filled with a heterogeneous dielectric material having a different dielectric constant.

[0027] In addition, the microwave heat treatment apparatus for uniform heating according to the present invention is characterized in that a dielectric material is additionally formed at at least one of the starting end and the ending end of the division divided by the dividing member to guide the microwave to be incident on the dielectric material filled inside the waveguide divided by the dividing member.

[0028] In addition, the microwave heat treatment apparatus for uniform heating according to the present invention is characterized by varying the position of the reflecting member for each space divided by the dividing member, thereby varying the anti-node position of the microwave transmitted into the processing chamber through an opening formed on one surface of the waveguide.

[0029] In addition, in a microwave heat treatment device for uniform heating according to the present invention, the length of the dielectric material filling each space divided by the dividing member and the length of the dividing member are the same or different from each other.

[0030] Specific details of other embodiments are included in "Specific details for implementing the invention" and the attached "drawings".

[0031] The advantages and / or features of the present invention and the methods for achieving them will become clear by referring to the various embodiments described below in detail together with the accompanying drawings.

[0032] However, it should be understood that the present invention is not limited to the configurations of each embodiment disclosed below, but may be implemented in various different forms, and that each embodiment disclosed in this specification is provided merely to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and that the present invention is defined only by the scope of each claim of the claims.

[0033] According to the present invention, by dividing the interior of a waveguide into multiple sections and filling each section with a dielectric material, a semiconductor substrate can be heated uniformly.

[0034] In addition, the position of the microwave reflection member formed at the inner end of the waveguide can be varied to enable uniform heating of the semiconductor substrate.

[0035] FIGS. 1 to 3 are schematic diagrams showing the configuration of a microwave heat treatment device for uniform heating according to one embodiment of the present invention.

[0036] Figure 4 is a diagram exemplifying the waveform of microwaves propagating within a waveguide and heating points formed on a substrate when the internal space of the waveguide is empty.

[0037] Figure 5 is a diagram exemplifying the waveform of microwaves propagating within a waveguide and heating points formed on a substrate when the internal space of the waveguide is filled with a dielectric material.

[0038] FIGS. 6 and 7 are exemplary drawings showing microwave waveforms within a dielectric material and heating points formed on a substrate according to the microwave phase at the point where the dielectric material starts, when the internal space of a waveguide is filled with a dielectric material.

[0039] FIGS. 8 to 10 are drawings illustrating an exemplary waveguide divided by a dividing member applied to the present invention.

[0040] FIG. 11 is a diagram exemplarily showing the arrangement of a waveguide divided by a dividing member applied to the present invention and an additionally formed dielectric material.

[0041] FIG. 12 is a diagram exemplarily showing the antinode position of microwaves according to the position of a waveguide divided by a dividing member applied to the present invention and a reflection member installed at the inner end of the waveguide.

[0042] FIG. 13 is a drawing exemplarily showing a waveguide divided by a dividing member applied to the present invention and a reflective member installed at the inner end of the waveguide.

[0043] FIG. 14 is a diagram exemplarily showing the arrangement of a segmented member and a dielectric material applied to the present invention.

[0044] FIG. 15 is a diagram illustrating, in an exemplary manner, the process of heating a substrate by microwaves in a microwave heat treatment device according to the present invention.

[0045] Before describing the present invention in detail, it should be understood that the terms and words used in this specification should not be interpreted as being limited to their ordinary or dictionary meanings, and that the inventor of the present invention may appropriately define and use the concepts of various terms to best describe their invention, and furthermore, that these terms and words should be interpreted in a meaning and concept consistent with the technical spirit of the present invention.

[0046] In other words, it should be understood that the terms used in this specification are used merely to describe preferred embodiments of the present invention and are not intended to specifically limit the content of the present invention, and that these terms are defined in consideration of various possibilities of the present invention.

[0047] In addition, it should be noted that in this specification, singular expressions may include plural expressions unless the context clearly indicates a different meaning, and that even if they are expressed in a similarly plural form, they may include a singular meaning.

[0048] Throughout this specification, where it is stated that a component "includes" another component, unless specifically stated otherwise, this may mean that it does not exclude any other component but may include any other component.

[0049] Furthermore, it should be noted that in cases where it is stated that a component "exists inside or is installed in connection with" another component, this component may be installed in direct connection or contact with the other component, or it may be installed at a certain distance apart, and in the case where it is installed at a certain distance apart, there may be a third component or means for fixing or connecting the component to the other component, and a description of this third component or means may be omitted.

[0050] On the other hand, if it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there is no third component or means.

[0051] Likewise, other expressions describing the relationship between each component, such as “between” and “right between”, or “adjacent to” and “directly adjacent to”, should be interpreted as having the same intent.

[0052] In addition, it should be understood that in this specification, terms such as “one side,” “other side,” “one side,” “other side,” “first,” “second,” etc., are used to clearly distinguish one component from another component, and that the meaning of the component is not restricted by such terms.

[0053] In addition, position-related terms such as "up," "down," "left," and "right" used in this specification should be understood as indicating the relative position of the corresponding component in the drawing, and unless an absolute position is specified, these position-related terms should not be understood as referring to an absolute position.

[0054] Furthermore, it should be understood that in the specification of the present invention, terms such as “…part,” “…unit,” “module,” and “device,” when used, refer to a unit capable of handling one or more functions or operations, and that this may be implemented in hardware or software, or a combination of hardware and software.

[0055] Furthermore, in specifying the reference numerals for each component of each drawing in this specification, the same component has the same reference numeral even if it is shown in different drawings; that is, the same reference numeral throughout the specification indicates the same component.

[0056] In the drawings attached to this specification, the size, position, connection relationships, etc., of each component constituting the present invention may be described in a partially exaggerated, reduced, or omitted manner for the convenience of explanation or to sufficiently clearly convey the concept of the present invention, and therefore, the proportions or scale may not be strictly accurate.

[0057] In addition, in describing the present invention below, detailed descriptions of components that are deemed to unnecessarily obscure the essence of the invention, such as known technologies including prior art, may be omitted.

[0058]

[0059] Hereinafter, a microwave heat treatment apparatus for uniform heating according to a preferred embodiment of the present invention will be described in detail with reference to the attached drawings.

[0060] FIG. 1 is a schematic diagram showing the configuration of a microwave heat treatment device for uniform heating according to one embodiment of the present invention.

[0061] As illustrated in FIG. 1, a microwave heat treatment device (100) for uniform heating according to one embodiment of the present invention may include a processing chamber (110), a vacuum pump (120), a microwave generating unit (130), a temperature measuring unit (140), a waveguide (150), etc.

[0062] In this configuration, the processing chamber (110) has a certain space inside and can have a structure capable of maintaining the internal space in one of the following states: atmospheric pressure, pressurized, and vacuum.

[0063] Accordingly, the processing chamber (110) is equipped with a vacuum pump (120) capable of discharging gas inside the chamber, and a venting device capable of injecting gas into the chamber may also be provided.

[0064] The microwave generating unit (130) can be installed outside the processing chamber (110) and can be driven under the control of a control unit (not shown) to generate microwaves.

[0065] In an embodiment of the present invention, the microwave generating unit (130) may be implemented as a magnetron, but is not limited thereto.

[0066] The temperature measuring unit (140) can measure the temperature of the semiconductor substrate (10) to be heat-treated and provide the measured value to the control unit (not shown).

[0067] In an embodiment of the present invention, the temperature measuring unit (140) may be implemented as a pyrometer, but is not limited thereto.

[0068] One end of the waveguide (150) is connected to the microwave generator (130), and the other end can be inserted into the processing chamber (110).

[0069] The waveguide (150) can transmit microwaves generated by the microwave generator (130) into the processing chamber (110) to heat the substrate (10) placed inside the processing chamber (110).

[0070] To this end, the waveguide (150) may have an opening (170) formed on one side (e.g., the upper side of the waveguide) of the portion inserted into the processing chamber (110) corresponding to the position of the substrate (10) placed in the processing chamber (110) for transmitting microwaves into the processing chamber (110), and the substrate (10) placed in the processing chamber (110) may be heated by transmitting microwaves into the processing chamber (110) through the formed opening (170) (see FIG. 2).

[0071] Here, the opening (170) may be filled with a dielectric material (160), but is not limited thereto.

[0072] The waveguide (150) can be formed of a metal material such as aluminum (Al), copper, stainless steel, etc., which has very high electrical conductivity, to transmit microwaves without loss, but is not limited thereto.

[0073] As shown in FIG. 1, the waveguide (150) may be installed on the lower surface of the processing chamber (110) and configured so that a substrate (10) is placed on the upper surface of the waveguide (150).

[0074] In this way, when a waveguide (150) is installed horizontally on the lower surface of a processing chamber (110) and configured so that a substrate (10) is placed on the upper part of the waveguide (150), a spacer (180) that separates the waveguide (150) from the substrate (10) may be provided on the upper part of the waveguide (150).

[0075] Additionally, as shown in FIG. 3, when a substrate (10) is placed on the lower surface of a processing chamber (110) and a waveguide (150) is installed horizontally on the upper surface of a processing chamber (110), a substrate support (185) that supports the substrate (10) and a substrate support driving unit (190) that can raise or lower the substrate support (185) to adjust the gap between the substrate (10) and the waveguide (150) may be provided in the lower part of the processing chamber (110).

[0076] Here, the substrate support (185) supporting the substrate (10) may be implemented with a microwave penetration material or pyrometer optic penetration material so as to be configured to measure the temperature of the substrate (10) using a pyrometer without being affected by microwaves.

[0077] In addition, the substrate support (185) supporting the substrate (10) is implemented with microwave absorption materials, so that when the substrate support (185) is heated due to the absorption of microwaves, the loss of thermal energy can be reduced and the heating uniformity of the substrate (10) can be improved when the substrate (10) located on the substrate support (185) is heated.

[0078] Meanwhile, a dielectric material (160) may be formed in the internal space of the waveguide (150), and microwaves generated by the microwave generator (130) may be transmitted into the processing chamber (110) through the formed dielectric material (160) to heat the substrate (10) placed in the processing chamber (110).

[0079] Generally, when the internal space of the waveguide (150) is empty, as shown in FIG. 4, microwaves generated by the microwave generator (130) are transmitted along the waveguide (150) into the processing chamber (110) to heat the substrate (10). At this time, when the internal space of the waveguide (150) is empty, heating points caused by standing waves can be formed on the substrate (10) located above the opening (170) formed on one side of the waveguide (150) at 1 / 4 and 3 / 4 positions of the wavelength at intervals of 1 / 2 of the wavelength.

[0080] Here, a standing wave is formed by the interference of a propagating wave and a reflected wave, a node is a point where the two waves exactly cancel each other out and the amplitude is zero, and an anti-node is a point where the two waves fully constructively interfere and the amplitude is maximum, a node is formed on the reflective surface, and the first anti-node is formed at the λ / 4 position on the reflective surface.

[0081] On the other hand, when a dielectric material (160) is formed in the internal space of the waveguide (150), due to the dielectric constant of the dielectric material (160), the wavelength of the microwave supplied from the microwave generating unit (130) is reduced within the dielectric material (160) (λ=c / (f* ), where λ is the wavelength, c is the speed of light, f is the frequency, Dk is the dielectric constant or λ=λ0 / n, where λ is the wavelength within the dielectric, λ0 is the wavelength of the incident wave, and n is the refractive index of the medium), so that the antinode spacing of the standing wave is reduced, and heating points are formed at narrower intervals on the substrate (10) located above the opening (170) formed on one side of the waveguide (150), and thereby the substrate (10) can be heated more uniformly.

[0082] As described above, when the dielectric material (160) is filled into the internal space of the waveguide (150), the wavelength of the microwave supplied from the microwave generator (130) passes through the space filled with air (or vacuum space) and then passes through the dielectric material (160). Depending on the length of the section filled with air and the section filled with the dielectric material (160), the phase of the microwave passing through the dielectric material (160) at the point where the dielectric material (160) begins changes.

[0083] Specifically, depending on the length of the section filled with air and the section filled with the dielectric material (160), the phase of the microwave may be located at the node where the dielectric material (160) starts, as shown in FIG. 6, and the phase of the microwave may be located at the antinode where the dielectric material (160) starts, as shown in FIG. 7.

[0084] The shape of the microwave standing wave generated within the dielectric material (160) changes according to the phase position of the microwave at the point where the dielectric material (160) starts.

[0085] As shown in FIG. 6, in order to position the phase of the microwave at the point where the dielectric material (160) starts at the node, the lengths of the section filled with air and the section filled with the dielectric material (160) can be calculated as follows.

[0086] Microwave wavelength λ=2(L) / n (n: 1, 2, 3, 4, 5, … natural number)

[0087] Microwave transmission length L = n * λ / 2

[0088] Length of the air-filled section L_air=n_air*λ_air / 2

[0089] The length of the region filled with genomic material L_genome = n_genome * λ_genome / 2

[0090] Total length inside the waveguide (air + dielectric) L_air + L_dielectric = n_air * λ_air / 2 + n_dielectric * λ_dielectric / 2

[0091] And as shown in FIG. 7, in order to position the phase of the microwave at the point where the dielectric material (160) starts at the antinode, the lengths of the air-filled section and the dielectric material (160)-filled section can be calculated as follows.

[0092] Microwave wavelength λ=4(L) / (2n-1) (n: 1, 2, 3, 4, 5, … natural number)

[0093] Microwave transmission length L=(2n-1)*λ / 4

[0094] Length of the section filled with air L_air=(2n_air-1)*λ_air / 4 (n: 1, 2, 3, 4, 5, … natural number)

[0095] Length of the region filled with genomic material L_genome = (2n_genome - 1) * λ_genome / 4 (n: 1, 2, 3, 4, 5, … natural number)

[0096] Total length inside the waveguide (air + dielectric) L_air + L_dielectric = (2n_air - 1) * λ_air / 4 + (2n_dielectric - 1) * λ_dielectric / 4

[0097] Meanwhile, as shown in FIG. 8, the internal space of the portion of the waveguide (150) inserted into the processing chamber (110) can be divided by at least one dividing member (155).

[0098] And each space divided by the dividing member (155) can be filled with dielectric material (160).

[0099] Additionally, a reflective member (157) that reflects microwaves may be provided at the other end of the waveguide (150) inserted into the processing chamber (110).

[0100] Here, the split member (155) and the reflection member (157) may be formed of the same metal material as the waveguide (150), or may be formed of a different metal material from the waveguide (150).

[0101] As previously described, the interior of the waveguide (150) is divided into multiple spaces (e.g., three) in the direction of microwave propagation through at least one (e.g., two) dividing member (155), and each space is filled with a dielectric material (160). Here, each space divided by the dividing member (155) may be filled with a dielectric material having the same dielectric constant, or may be filled with heterogeneous dielectric materials having different dielectric constants.

[0102] In this configuration, when the microwave generating unit (130) generates microwaves, the microwaves are divided and transmitted into the dielectric material (160) formed in each space, and the microwaves transmitted to each dielectric material (160) have their wavelength reduced due to the dielectric material (160), thereby reducing the antinode spacing of the standing wave, so that heating points are formed at narrower intervals on the substrate (10) located above the opening (170) formed on one side of the waveguide (150), and as a result, the substrate (10) can be heated more uniformly.

[0103] As illustrated in FIG. 9, when the interior of a standardized waveguide is divided into multiple spaces through at least one dividing member (155), as the number of spaces divided by the dividing member (155) increases, microwaves are transmitted into the dielectric material (160) formed in each space divided by the dividing member (155), thereby forming antinodes of standing waves in each divided space. Therefore, as the number of spaces divided by the dividing member (155) increases, the number of heating points also increases, allowing the substrate (10) to be heated more uniformly.

[0104] The dividing member (155) may be formed to divide the inside of the waveguide in correspondence with the space where the dielectric material is formed as shown in FIG. 9, and may also be formed to divide the inside of the entire waveguide as shown in FIG. 10.

[0105] In addition, as shown in FIG. 11, a dielectric material (160) may be additionally formed at at least one of the starting end and the ending end of the division that are divided by the dividing member (155).

[0106] In this way, the additionally formed dielectric material (160) can guide the microwave supplied from the microwave generating unit (130) to be incident on the dielectric material (160) filled inside the waveguide divided by the dividing member (155).

[0107] Additionally, a reflective member (157) that reflects microwaves is provided at the other end of the waveguide (150) inserted into the processing chamber (110), and the antinode position of the standing wave can be controlled according to the position of the reflective member (157).

[0108] Specifically, the antinode position of the microwaves exiting through the opening (170) is varied according to the position of the reflecting member (157) installed at the inner end of the waveguide (150) to reflect the microwaves, thereby adjusting the position of the heating point on the substrate (10) so that the substrate (10) can be heated uniformly.

[0109] As explained above, the standing waves of the microwave form nodes on the reflective surface, the first antinode is formed at a position λ / 4 on the reflective surface, and antinodes are formed at intervals of λ / 2 from the first formed antinode, thereby forming heating points that heat the substrate.

[0110] Accordingly, as shown in FIG. 12, if the position of the reflective member (157) installed at the inner end of the waveguide (150) is moved, the position of the antinode also moves, and as a result, the position of the heating point on the substrate (10) can be controlled by adjusting the position of the reflective member (157) installed at the inner end of the waveguide (150).

[0111] The antinode position of the microwave transmitted into the processing chamber (110) through the opening (170) formed on one side of the waveguide (150) can be varied by changing the position of the reflection member (157) for each space divided by the aforementioned dividing member (155).

[0112] As shown in FIG. 13, the reflective member (157) is provided at the entire or part of the inner end of the other end of the waveguide (150) so as to allow the position of the heating point on the substrate (10) to be adjusted by arbitrarily varying the antinode position of the microwave standing wave, whose wavelength is reduced as it passes through the dielectric material (160).

[0113] Additionally, the length of the dielectric material (160) filling each space divided by the dividing member (155) and the length of the dividing member (155) may be the same or different from each other.

[0114] Specifically, as shown in FIG. 14 (a), the lengths of the dividing member (155) and the dielectric material (160) are formed to be the same, and both the dividing member (155) and the dielectric material (160) are formed to be in contact with the reflective member (157); as shown in FIG. 14 (b), the length of the dielectric material (160) is formed to be longer than the length of the dividing member (155), and both the dividing member (155) and the dielectric material (160) are formed to be in contact with the reflective member (157); and as shown in FIG. 4 (c), the lengths of the dividing member (155) and the dielectric material (160) are formed to be the same, and the dividing member (155) is in contact with the reflective member (157), and the dielectric material (160) is formed at a certain distance from the reflective member (157).

[0115] And as shown in FIG. 4 (d), the length of the split member (155) is formed to be longer than the length of the dielectric material (160), and both the split member (155) and the dielectric material (160) are formed to be in contact with the reflective member (157), and as shown in FIG. 4 (e), the lengths of the split member (155) and the dielectric material (160) are formed to be the same, and the dielectric material (160) is in contact with the reflective member (157), and the split member (155) is formed at a certain distance from the reflective member (157).

[0116] As shown in (f) of FIG. 14, the length of the dielectric material (160) is formed to be longer than the length of the dividing member (155), and both the dividing member (155) and the dielectric material (160) are formed to be in contact with the reflective member (157), but the lengths of the dielectric material (160) may be formed differently from each other. As shown in (g) of FIG. 14, the lengths of the dividing member (155) and the dielectric material (160) are formed differently from each other, the dividing member (155) is in contact with the reflective member (157), and the dielectric material (160) is formed at a certain distance from the reflective member (157), but the lengths of the dielectric material (160) may be formed differently from each other.

[0117] The aforementioned dielectric material (160) and segmented member (155) can be implemented in various ways in addition to the method presented above.

[0118] Meanwhile, when the microwave generating unit (130) of the microwave heat treatment device (100) for uniform heating according to the present invention generates microwaves, the microwaves are divided and transmitted into the dielectric material (160) formed in each space, and the wavelength of the microwaves transmitted to each dielectric material (160) is reduced due to the dielectric material (160), thereby reducing the antinode spacing of the standing wave.

[0119] In this way, the microwave, with its antinode spacing reduced, heats the substrate (10) located above through an opening (170) formed on one side of the waveguide (150), and the microwave passing through the substrate (10) is reflected from the wall of the processing chamber (110) as shown in FIG. 15 and directed back toward the substrate (10).

[0120] In this way, the substrate (10) is heated a second time by microwaves that are reflected from the wall of the processing chamber (110) and re-incident on the substrate (10), thereby compensating for the heating point.

[0121] As explained above, the present invention enables uniform heating of a semiconductor substrate by dividing the interior of a waveguide into multiple sections and filling each space with a dielectric material.

[0122] In addition, the present invention enables uniform heating of a semiconductor substrate by varying the position of a microwave reflection member formed at the inner end of a waveguide.

[0123] Although various preferred embodiments of the present invention have been described above with some examples, the descriptions of various embodiments described in the "Specific details for carrying out the invention" section are merely illustrative, and those skilled in the art to which the present invention pertains will understand that the present invention can be modified in various ways or equivalent embodiments can be carried out based on the above description.

[0124] In addition, since the present invention can be implemented in various other forms, the present invention is not limited by the description above. The above description is provided merely to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and it should be understood that the present invention is defined only by each claim of the claims.

[0125] [Explanation of the symbol]

[0126] 110. Processing chamber,

[0127] 120. Vacuum pump,

[0128] 130. Microwave generator,

[0129] 140. Temperature measuring unit,

[0130] 150. Waveguide,

[0131] 155. Divided member,

[0132] 157. Reflective element,

[0133] 160. Genome,

[0134] 170. Opening,

[0135] 180. Spacer,

[0136] 185. Board support,

[0137] 190. Board support drive unit

Claims

1. A processing chamber having a certain space inside; A microwave generating unit installed outside the processing chamber to generate microwaves; and A microwave heat treatment device for uniform heating, comprising: a waveguide having one end connected to the microwave generating unit, the other end inserted into the processing chamber, and the inner end of the other end provided with a reflective member that reflects microwaves, wherein the position of the reflective member is varied to vary the anti-node position of the microwaves transmitted into the processing chamber through an opening formed on one surface of the waveguide, the internal space of the part inserted into the processing chamber is divided by at least one dividing member, and each space divided by the dividing member is filled with a dielectric material, thereby transmitting microwaves generated by the microwave generating unit into the processing chamber through the dielectric material to heat a substrate placed inside the processing chamber.

2. In Paragraph 1, A microwave heat treatment device for uniform heating, characterized in that an opening is formed on one side of a portion inserted into the processing chamber corresponding to the position of a substrate disposed within the processing chamber, for transmitting microwaves into the processing chamber.

3. In Paragraph 1, A microwave heat treatment device for uniform heating, characterized in that each space divided by the above-mentioned dividing member is filled with a heterogeneous dielectric material having a different dielectric constant.

4. In Paragraph 1, A microwave heat treatment apparatus for uniform heating, characterized in that a dielectric material is additionally formed at at least one of the split start end and end end split by the split member to guide the microwave to be incident on the dielectric material filled inside the waveguide split by the split member.

5. In Paragraph 1, A microwave heat treatment apparatus for uniform heating, characterized by varying the position of the reflection member for each space divided by the dividing member, thereby varying the anti-node position of the microwave transmitted into the processing chamber through an opening formed on one surface of the waveguide.

6. In Paragraph 1, A microwave heat treatment apparatus for uniform heating, characterized in that the length of the dielectric material filling each space divided by the above-mentioned dividing member and the length of the above-mentioned dividing member are the same or different.

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