Multi-parallel-line type semiconductor modulator
Patent Information
- Application Number
- PCT/KR2025/013527
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-04-14
- Filing Date
- 2025-09-03
- Publication Date
- 2026-10-22
Smart Images
Figure KR2025013527_22102026_PF_FP_ABST
Abstract
Description
Multi-parallel line-type semiconductor modulator
[0001] The present invention relates to a semiconductor modulator, and more specifically, to a multi-parallel line type semiconductor modulator.
[0002] A modulator is a component of a linear accelerator that accelerates electrons generated from an electron gun, and is a device that supplies basic pulse power to a high-power RF energy amplifier.
[0003] Generally, types of modulators include the line-type thyratron modulator of Fig. 1 and the hard-tube type semiconductor switch modulator of Fig. 2.
[0004] As shown in Fig. 1, the line-type thyratron modulator is configured such that high voltage charged in a number of parallel-connected capacitors is switched through a thyratron, which is a plasma switch, to form a pulse, and the pulse voltage is supplied to a klystron, which is a load.
[0005] The linear thyratron modulator is a classic type of modulator that has been used for a very long time; it demonstrates proven high safety and performance and is currently in use in most accelerators worldwide.
[0006] However, the thyratron itself has the problem of a short lifespan of about two years, and most failures during accelerator operation are attributed to the thyratron. Currently, due to reduced production, prices are increasing and individual performance is deteriorating.
[0007] Meanwhile, the hard tube-type semiconductor switch modulator of Fig. 2 is a model that has been introduced relatively recently and is replacing the line-type thyratron modulator, and is configured to output pulses using an IGBT semiconductor switch instead of a thyratron.
[0008] Compared to plasma switches such as thyratrons, it has the advantage of a long lifespan of about 20 years. However, due to the nature of semiconductor switches, it has the problem of relatively lower stability because pulse flatness and pulse stability are lower than those of line-type thyratrons, and it has the disadvantage of frequent maintenance and repair due to the complex circuit.
[0009] Above all, the biggest disadvantage of hard tubular semiconductor switch modulators is the transient problem caused by the switching operation of the semiconductor switch during pulse shaping.
[0010] The objective of the present invention is to provide a multi-parallel line-type semiconductor modulator.
[0011] A multi-parallel line-type semiconductor modulator according to the purpose of the present invention described above may be configured to include a pulse forming network (PFN) module in which each PFN circuit section composed of a plurality of capacitors is provided in parallel and forms and discharges a pulse voltage using a DC charging voltage source; and a pulse transformer module that transmits the pulse voltage discharged from the PFN module to a load.
[0012] Here, the system may be configured to further include a high-voltage power module that supplies a DC charging voltage power; a disspike choke filtering module that removes spike noise from the DC charging voltage power supplied by the high-voltage power module and outputs a DC charging voltage power; and an EOLC module that absorbs a transient phenomenon in the form of reverse voltage that occurs when there is an impedance mismatch with the load during PFN discharge and outputs a DC charging voltage power to the PFN module.
[0013] And it may be configured to further include a pulse transformer module that transmits the pulse voltage formed in the above PFN module to a load; a pulse tank circuit module that supplies the pulse transmitted from the above pulse transformer module to a load; a main switch module that discharges the pulse voltage of the above PFN module; a main switch triggering module that generates a turn-on trigger to turn on the above main switch module and inputs it to the above main switch module; and a control module that controls the above main switch triggering module to form a pulse voltage according to a predetermined pulse repetition rate.
[0014] And the above-mentioned disspike choke filtering module is configured to include a plurality of disspike choke filter circuit sections configured in a multiple parallel structure, the above-mentioned EOLC module is configured to include a plurality of EOLC circuit sections configured in a multiple parallel structure at each output terminal of the plurality of disspike choke filter circuit sections, the above-mentioned PFN module is configured to include a plurality of PFN circuit sections configured in a multiple parallel structure at each output terminal of the plurality of EOLC circuit sections, the above-mentioned pulse transformer module is configured to include a plurality of pulse transformers configured in a multiple parallel structure at each output terminal of the plurality of PFN circuit sections, the above-mentioned main switch module is configured to include a plurality of main switches each provided at the output terminal of the plurality of PFN circuit sections to discharge the pulse voltage of each PFN circuit section, the above-mentioned main switch triggering module is configured to include a main switch triggering circuit section that generates a turn-on trigger to turn on each of the plurality of main switches and inputs it to each of the plurality of main switches, and the above-mentioned pulse tank circuit module is for supplying the pulse voltage to the heater of the load It is configured to supply voltage and voltage for amplifying RF energy of the load separately, and each PFN circuit may be configured to store voltage power supplied from the high-voltage power module.
[0015] And the main switch may be configured to automatically turn off when the voltage power, which is turned on by the turn-on trigger and configured to be stored in each PFN circuit, is discharged through the output terminal of each PFN circuit.
[0016] And the main switch module is configured to have a snubber circuit to reduce transients when the main switch is turned on, and the main switch may be configured as a GTO (gate turn-off thyristor) switch.
[0017] And the above snubber circuit is resistor R s and capacitor C s is connected in series, and the resistor R s diode D s It is configured to be additionally connected in parallel, and during turn-on operation, the transient current is the diode D s Through the above capacitor C s It can be configured to be stored in.
[0018] And the pulse transformer module may be configured to have a plurality of cores, with at least two primary windings connected to each core, and two secondary windings connected in parallel to all of the plurality of cores.
[0019] And the pulse tank circuit module may be configured to further include a voltage measuring circuit that measures the voltage supplied to the load.
[0020] And the control module may be configured to automatically provide feedback adjustment so that when the voltage measured by the voltage measuring circuit is smaller than a predetermined reference, the voltage stored in the PFN circuit rises to the predetermined reference.
[0021] According to the multi-parallel line-type semiconductor modulator described above, by providing a switch composed of a gate turn-off thyristor (GTO) semiconductor at the output terminal of the pulse-forming network (PFN) circuit to form a pulse, the GTO semiconductor switch is automatically turned off when the voltage charged in the PFN circuit is discharged, thereby preventing transient phenomena from occurring during the turn-off.
[0022] In addition, by configuring the main switch, which is composed of a GTO semiconductor switch, to be equipped with a snubber circuit, it is possible to reduce transient phenomena that occur when the main switch is turned on.
[0023] Meanwhile, by providing multiple PFN circuit sections in a multiple parallel line type to configure a large number of line type capacitors and GTO semiconductor switches, it is possible to resolve the problem of the capacitance limit of existing semiconductor switches and ensure stability.
[0024] On the other hand, by measuring the voltage supplied to the load and determining in real time whether the measured voltage is lower than a predetermined standard, and by using feedback control to increase the charging voltage of the PFN circuit when the voltage is lower than the predetermined standard as a result of the real-time determination, the pulse voltage supplied to the load can be stably maintained.
[0025] Figure 1 is a circuit diagram of a line-type thyratron modulator according to the prior art.
[0026] Figure 2 is a circuit diagram of a hard-tube type semiconductor switch modulator according to the prior art.
[0027] FIG. 3 is a block diagram of a multi-parallel line type semiconductor modulator according to one embodiment of the present invention.
[0028] FIG. 4 is a circuit diagram of a high-voltage power module according to one embodiment of the present invention.
[0029] FIG. 5 is a command charging circuit diagram according to one embodiment of the present invention.
[0030] FIG. 6 is a circuit diagram of a disspike choke filter circuit section according to one embodiment of the present invention.
[0031] FIG. 7 is a circuit diagram of an EOLC circuit section according to one embodiment of the present invention.
[0032] FIG. 8 is a circuit diagram of a PFN circuit section according to one embodiment of the present invention.
[0033] FIG. 9 is a circuit diagram of a pulse transformer according to one embodiment of the present invention.
[0034] FIG. 10 is a circuit diagram of a pulse tank circuit module according to one embodiment of the present invention.
[0035] FIG. 11 is a circuit diagram of a main switch according to one embodiment of the present invention.
[0036] The present invention is susceptible to various modifications and may have various embodiments; therefore, specific embodiments are illustrated in the drawings and described in detail in the specific details for carrying out the invention. However, this is not intended to limit the invention to specific embodiments, and it should be understood that the invention includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention. Similar reference numerals have been used for similar components in the description of each drawing.
[0037] Terms such as first, second, A, B, etc., may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and / or" includes a combination of a plurality of related described items or any of a plurality of related described items.
[0038] When it is stated that one component is "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.
[0039] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, terms such as "comprising" or "having" are intended to specify the presence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.
[0040] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.
[0041] Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the attached drawings.
[0042] FIG. 3 is a block diagram of a multi-parallel line type semiconductor modulator according to an embodiment of the present invention. FIG. 4 is a circuit diagram of a high-voltage power module according to an embodiment of the present invention, FIG. 5 is a command charging circuit diagram according to an embodiment of the present invention, FIG. 6 is a circuit diagram of a disspike choke filter circuit section according to an embodiment of the present invention, FIG. 7 is a circuit diagram of an EOLC circuit section according to an embodiment of the present invention, FIG. 8 is a circuit diagram of a PFN circuit section according to an embodiment of the present invention, FIG. 9 is a circuit diagram of a pulse transformer according to an embodiment of the present invention, FIG. 10 is a circuit diagram of a pulse tank circuit module according to an embodiment of the present invention, and FIG. 11 is a circuit diagram of a main switch according to an embodiment of the present invention.
[0043] First, referring to FIG. 3, a multi-parallel line-type semiconductor modulator (100) according to one embodiment of the present invention may be configured to include a high-voltage power module (110), a despike chalk filtering module (120), an EOLC (end of line clippering) module (130), a PFN (pulse forming network) module (140), a pulse transformer module (150), a pulse tank circuit module (160), a main switch module (170), a main switch triggering module (180), and a control module (190).
[0044] The detailed composition is explained below.
[0045] The high-voltage power module (110) can be configured to supply high-voltage power to the PFN module (140).
[0046] As shown in FIG. 4, the high-voltage power module (110) can be divided into a charging circuit area on the left and a discharging circuit area on the right based on the voltage regulator T1 and the step-up transformer T2.
[0047] Voltage regulator T1 (Variable Voltage Auto-transformer) receives a 60 Hz 220V AC voltage, varies it from 0 to 250V, and supplies it to step-up transformer T2. Voltage regulator T1 can be configured to be linked with a controller to enable automatic adjustment of the output voltage. The AC voltage boosted by step-up transformer T2 is rectified by full-wave rectifiers D(fb1), D(fb2), D(fb3), and D(fb4), and converted to a maximum of 3 kV DC by filter capacitor C(F). Filter capacitor C(F) is the total PFN capacitor C PFN Much larger sizes can be used. Typically, C(F) is C PFN It can be configured to use a capacity more than 10 times larger.
[0048] R(dump) and SOL1, connected in parallel to the filter capacitor C(F), can be configured to discharge (dump) the energy of the filter capacitor C(F) for safety when not in operation. Additionally, R(leak) can be configured to perform the function of slowly discharging the filter capacitor energy over a long period of time in case R(dump) fails.
[0049] The charging circuit area is C PFN It can be implemented using a command charging method to charge. The charging current can be configured to flow through the primary side pulse transformer winding, and the direction of the charging current can be set to be reversed to the PFN discharge current to reset the core simultaneously with charging.
[0050] Referring to FIG. 5, the voltage V charged in the filter capacitor C(F) C is and C PFN The voltage charged in is V PFN is. And L chis a charging inductor, and the SCR is a switch that conducts according to an external command (Gage Control G1). When Gate Control G1 is applied, the SCR conducts, and the energy in C(F) is transferred to the charging inductor L ch C is determined by the resonant frequency determined by the filter capacitor (F). PFN It can be configured to be charged.
[0051] Due to the resonance characteristics of this circuit, C PFN Voltage V charged to PFN is V C It is amplified to about twice the amount, and V C Since the maximum charging voltage of is 3kV, V PFN The maximum chargeable voltage of can be about 6kV.
[0052] The disspike choke filtering module (120) can be configured to output a DC charging voltage power supplied from the high-voltage power module (110) by removing the influence of spike noise that may occur during discharge.
[0053] Here, the disspike choke filtering module (120) may be configured to include a plurality of disspike choke filter circuit sections (121) configured in a multiple parallel structure.
[0054] By using a high-voltage power source, the PFN circuit (141) can be charged at a low resonant frequency and discharged very quickly at a high frequency. Accordingly, the disspike choke filter circuit (121) of FIG. 6 can be used to prevent transient components generated during the discharge of the PFN circuit (141) from being transmitted toward the charge filter capacitor without affecting the charging of the PFN circuit (141).
[0055] L, which is mainly a despiking inductor des The inductive reactance component (ωL) that varies with frequency due to des = 2πfLdes ) can be used.
[0056] The EOLC module (130) can be configured to absorb and output a transient phenomenon in the form of a reverse voltage that occurs when there is an impedance mismatch with the load during PFN discharge to the DC charging voltage power output from the disspike choke filtering module (120).
[0057] Here, the EOLC module (130) may be configured to include a plurality of EOLC circuit sections (131) configured in a multiple parallel structure at each output terminal of a plurality of disspike choke filter circuit sections (121).
[0058] When discharging the PFN circuit (141), impedance mismatch may occur due to abnormalities such as a short circuit of the load, and a transient phenomenon in the form of reverse voltage may occur. This may cause stress to a switch that allows only unidirectional current flow, such as a diode.
[0059] Accordingly, each EOLC circuit (131) can effectively absorb reverse voltage transients to relieve stress applied to each main switch (171).
[0060] The PFN module (140) is configured such that each PFN circuit (141), composed of a plurality of capacitors, is provided in parallel, and can be configured to form a pulse voltage and discharge using a DC charging voltage power output from the EOLC module (130).
[0061] The PFN module (140) may be configured to include a plurality of PFN circuit sections (141) configured in a multiple parallel structure at each output terminal of a plurality of EOLC circuit sections (131).
[0062] As previously mentioned, the PFN circuit section (141) can be configured to store a DC charging voltage power supplied from the high-voltage power module (110).
[0063] As shown in FIG. 8, the PFN circuit section (141) is configured in a line shape, and multiple such line-shaped PFN circuit sections (141) can be provided in multiple parallel.
[0064] The pulse transformer module (150) can be configured to transmit the pulse voltage discharged from the PFN module (140) to the load (10). Here, the load (10) can be a klystron.
[0065] The pulse transformer module (150) may be configured to include a plurality of pulse transformers (151) configured in a multiple parallel structure at each output terminal of a plurality of PFN circuit sections (141).
[0066] The pulse transformer module (150) may be configured to have a plurality of cores, with at least two primary windings connected to each core and two secondary windings connected in parallel across the plurality of cores.
[0067] Referring to Fig. 9, transformer core N C There are a total of 6 examples, and the primary winding is exemplified by N for each core. P11 , N P12 Two are connected, and the secondary winding is N S Two of them are connected in parallel. In FIG. 9, a total of 12 primary windings are exemplified, and the primary voltage applied to the primary winding is V P And, the voltage induced in the secondary winding is V S am.
[0068] Effective primary winding N of each core P1 In the case of two primary windings, it can be calculated as shown in the following mathematical formula 1.
[0069]
[0070] And the effective winding ratio of each core can be calculated as shown in the following mathematical formula 2.
[0071]
[0072] And the secondary voltage can be boosted as shown in the following mathematical equation 3.
[0073]
[0074] Here, the step-up ratio of the pulse transformer (151) is free from waveform characteristic limitations, such as rise time, to maintain the shape of the input pulse well due to the characteristics of the parallel structure, and accordingly, a high secondary voltage rise ratio is possible. Therefore, it is structured to allow the use of low-voltage semiconductor devices.
[0075] For example, n=14, N C In the case of =6, an 84-fold step-up is possible. In the case of a classic line-type thyratron modulator, the step-up ratio is typically limited to within 20 times.
[0076] The pulse tank circuit module (160) can be configured to supply the pulse voltage delivered from the pulse transformer module (150) to the load (10).
[0077] A pulse of a specific frequency is supplied to the load (10), and an RF amplifier element called a klystron can be used as the load (10).
[0078] In the case of a klystron, a heater or filament is installed, and this heater requires a separate low-voltage power supply. Accordingly, it can be configured to separate the low heater voltage and the high pulse voltage using a capacitor and supply them to the klystron.
[0079] The pulse tank circuit module (160) has an output pulse current meter (I) of FIG. 10. SEC ) is provided, and a voltage measuring circuit, that is, a pulse voltage measuring device (CAP Divider), may also be provided.
[0080] The main switch module (170) can be configured to discharge the pulse voltage of the PFN module (140).
[0081] Here, the main switch module (170) may be configured to include a plurality of main switches (171) that are each provided at the output terminal of a plurality of PFN circuit sections (141) and discharge the pulse voltage of each PFN circuit section (141).
[0082] The main switch triggering module (180) may be configured to generate a turn-on trigger to turn on the main switch module (170) and input it to the main switch module (170).
[0083] The main switch triggering module (180) may be configured to include a main switch triggering circuit (181) that generates a turn-on trigger to turn on each of the multiple main switches (171) and inputs it to each of the multiple main switches (171).
[0084] The main switch (171) can be configured to automatically turn off when the voltage power, which is configured to be turned on by the turn-on trigger of each main switch triggering circuit (181) and stored in each PFN circuit (141), is discharged through the output terminal of each PFN circuit (141).
[0085] In other words, since the turn-off process is automatically turned off from the discharge state without a separate artificial turn-off, it is possible to reduce transient phenomena caused by the semiconductor switch.
[0086] At this time, the main switch (171) may be configured as a GTO (gate turn-off thyristor) switch.
[0087] Although the GTO switch has both on / off functions based on an external trigger signal, in the present invention, it can be configured so that the turn-on function is mainly performed by an external trigger.
[0088] When the switch is turned on according to the pulse shaping characteristics of the PFN circuit (141), the energy of the PFN circuit (141) is completely consumed by the load (10), so the current in the GTO switch is maintained at a very low level after the pulse ends, and it has the characteristic of automatically switching to a turn-off state. Accordingly, the main switch (171) automatically switches to a turn-off state without a separate off-trigger. Accordingly, transient phenomena do not occur due to the current maintained at a low level when switching to turn-off.
[0089] However, if an emergency situation such as a short circuit of the load (10) occurs during pulse output, the main switch triggering circuit (181) may be configured to block the transmission of pulse energy to the load (10) by an off-trigger signal to protect the load (10).
[0090] Meanwhile, the main switch module (170) may additionally be equipped with a snubber circuit to reduce transients when the main switch (171) is turned on.
[0091] The high voltage that may occur during transient phenomena is caused by the parasitic inductance and parasitic capacitor of the switch, and because the resistance component is low, it becomes an under-damping condition and oscillates, and the resonant frequency is generally very high, exceeding several MHz.
[0092] As shown in Fig. 11, the snubber circuit consists of capacitor C s and resistance R s By additionally installing, the resonance can be configured to become a critical damping condition. That is, diode D s The transient current generated when switching by connecting capacitor C sIt can be stored quickly. Accordingly, it is possible to prevent the pulse stability from decreasing due to transient phenomena.
[0093] The control module (190) can control the main switch triggering module (180) to form a pulse voltage according to a predetermined pulse repetition rate.
[0094] The control module (190) can be composed of a microcomputer (MiCom) and can perform various function controls.
[0095] The control module (190) may be configured to monitor in real time the voltage measured by the voltage measurement circuit (not shown) of the pulse tank circuit module (180). At this time, the control module (190) has a predetermined voltage that is monitored in real time.
[0096] It can be configured to determine whether it is smaller than the standard.
[0097] If the voltage stored in the PFN circuit (141) is smaller than the predetermined standard, the control module (190) can be configured to automatically adjust the charging voltage by T1 feedback control so that the voltage stored in the PFN circuit (141) rises to the predetermined standard.
[0098] That is, the control module (190) can control the voltage charged to the capacitor of the PFN module (140) by feedback control of the main switch triggering module (180) and maintain the magnitude of the voltage output from the pulse tank circuit module (10) to the load (10) at a predetermined value. At this time, the feedback control can be configured to be performed within a predetermined allowable range by considering the capacitance of the capacitor of the PFN module (140), the operating range of the main switch (171), the operating range of the main switch triggering module (180), etc.
[0099] If the pulse voltage output from the pulse tank circuit module (160) drops significantly due to a functional error, non-operation, or failure of a specific main switch (171) or a specific main switch triggering circuit (181), the control module (190) may be configured to determine whether it is possible to maintain the pulse voltage within a predetermined allowable range according to a predetermined standard by performing T1 feedback control by adjusting the charging voltage. If feedback control is possible by adjusting the charging voltage, the control may be configured to adjust the charging voltage, and if not, the main switch triggering module (180) may be controlled to turn off the main switch module (170) and stop operation.
[0100] Meanwhile, the control module (190) may adjust the pulse repetition rate to output the pulse voltage required for the load (10), or select the main switch (171) to be used and adjust the number of uses thereof. For example, the control module (190) may set the number of main switches (171) to be used to be large and lower the charging voltage, or set the number of main switches (171) to be used to be small and raise the charging voltage. The control module (190) may set the number of main switches (171) and the charging voltage in combination within the allowable range of the charging voltage.
[0101] If, as a result of monitoring the pulse voltage of the control module (190), the drop in pulse voltage is very large and corresponds to the number of failures of the main switch (171), the control module (190) can be configured to predict that the main switch (171) is faulty. For example, if a total of 10 lines are in use and are set to 10 kV, but the pulse voltage is formed only up to 9 kV and does not reach 10 kV even with feedback control, it can be predicted that there is a problem with one line.
[0102] In this case, the control module (190) may be configured to automatically restore the faulty lines by selecting each line to another line that is not currently in use and replacing it sequentially. Additionally, the control module (190) may be configured to output a notification to the faulty line through a control panel (not shown), and the faulty line may be selected and set not to be used.
[0103] On the other hand, the control module (190) may also control the semiconductor modulator to start operation after undergoing a series of automatic test processes by sequentially forming pulse voltages for each line in test mode before operation.
[0104] On the other hand, the control module (190) can monitor in real time whether there is a short circuit or an abnormality in the load (10) using a sensor (not shown) of the load (10). At this time, if it is determined that the load (10) is in a state where it can no longer be operated, such as a short circuit, the control module (190) can control the main switch trigger module (180) to turn off the main switch module (170) and stop operation.
[0105] Although the invention has been described with reference to the above embodiments, those skilled in the art will understand that various modifications and changes can be made to the invention without departing from the spirit and scope of the invention as set forth in the following claims.
Claims
1. A PFN (pulse forming network) module comprising a plurality of capacitors, each PFN circuit section arranged in parallel, which forms a pulse voltage and discharges using a DC charging voltage power source; A multi-parallel line-type semiconductor modulator comprising a pulse transformer module that transmits the pulse voltage discharged from the above PFN module to the load.
2. In Paragraph 1, High-voltage power module supplying DC charging voltage power; A disspike choke filtering module that removes spike noise from the DC charging voltage power supplied from the above high-voltage power module and outputs a DC charging voltage power; A multi-parallel line-type semiconductor modulator characterized by being configured to further include an EOLC module that absorbs a transient phenomenon in the form of reverse voltage generated when there is an impedance mismatch with a load during PFN discharge and outputs a DC charging voltage power source to the PFN module.
3. In Paragraph 2, A pulse transformer module that transmits the pulse voltage formed in the above PFN module to a load; A pulse tank circuit module that supplies pulses transmitted from the above pulse transformer module to a load; A main switch module that discharges the pulse voltage of the above PFN module; A main switch triggering module that generates a turn-on trigger and inputs it to the main switch module to turn on the main switch module; A multi-parallel line-type semiconductor modulator characterized by further comprising a control module that controls the main switch triggering module to shape a pulse voltage according to a predetermined pulse repetition rate.
4. In Paragraph 3, The above-mentioned Disspike choke filtering module is, It is configured to include a plurality of disspike choke filter circuit sections configured in a multiple parallel structure, and The above EOLC module is, Each output terminal of the above-mentioned plurality of disspike choke filter circuits is configured to include a plurality of EOLC circuits configured in a multiple parallel structure, and The above PFN module is, Each output terminal of the above-mentioned plurality of EOLC circuit sections is configured to include a plurality of PFN circuit sections configured in a multiple parallel structure, and The above pulse transformer module is, Each output terminal of the above-mentioned plurality of PFN circuit sections is configured to include a plurality of pulse transformers configured in a multiple parallel structure, and The above main switch module is, It is configured to include a plurality of main switches, each provided at the output terminal of the plurality of PFN circuit sections to discharge the pulse voltage of each PFN circuit section, and The above main switch triggering module is, It is configured to include a main switch triggering circuit that generates a turn-on trigger to turn on each of the plurality of main switches and inputs it to each of the plurality of main switches, and The above pulse tank circuit module is, The above pulse voltage is configured to be supplied separately as a voltage for supplying to the heater of the load and a voltage for amplifying the RF energy of the load, respectively. Each of the above PFN circuit sections is, A multi-parallel line type semiconductor modulator characterized by being configured to store the voltage power supplied from the above-mentioned high-voltage power module.
5. In paragraph 4, the main switch is, A multi-parallel line type semiconductor modulator characterized by being configured to automatically turn off when a voltage power supply, which is turned on by the above-mentioned turn-on trigger and configured to be stored in each PFN circuit, is discharged through the output terminal of each PFN circuit.
6. In paragraph 5, the main switch module is, It is configured to include a snubber circuit to reduce transients when the main switch is turned on, and The above main switch is, A multi-parallel line-type semiconductor modulator characterized by being composed of a GTO (gate turn-off thyristor) switch.
7. In paragraph 6, the snubber circuit is, Resistance R s and capacitor C s is connected in series, and the resistor R s diode D s It is configured to be additionally connected in parallel, and during turn-on operation, the transient current is the diode D s Through the above capacitor C s A multi-parallel line-type semiconductor modulator characterized by being configured to be stored in 8. In paragraph 7, the pulse transformer module is, A multi-parallel line type semiconductor modulator characterized by having a plurality of cores, wherein at least two primary windings are connected to each core, and two secondary windings are connected in parallel to all of the plurality of cores.
9. In paragraph 8, the pulse tank circuit module is, A multi-parallel line type semiconductor modulator characterized by being configured to further include a voltage measuring circuit for measuring the voltage supplied to the load.
10. In paragraph 9, the control module is, A multi-parallel line type semiconductor modulator characterized by being configured to automatically provide feedback adjustment so that when the voltage measured by the voltage measurement circuit is smaller than a predetermined reference, the voltage stored in the PFN circuit rises to the predetermined reference.