Metallic glass applied to gate electrode layer of vertical non-volatile memory device, and semiconductor device comprising same

Abstract

A vertical non-volatile memory device according to a preferred embodiment of the present invention applies metallic glass as a gate electrode layer, thereby maintaining excellent electrical conductivity due to the absence of grain boundaries even if the thickness of the electrode layer is reduced. In particular, the Al-based metal glass exhibits excellent electrical conductivity with a resistivity of 30 μΩ·cm or less even in an ultrathin film, and thus is highly advantageous in improving the performance of a vertical non-volatile memory device requiring high integration through thinning of the gate electrode layer to an ultra-thin level.

Description

Metal glass applied to the gate electrode layer of a vertical non-volatile memory device and a semiconductor device including the same

[0001] The present invention relates to metallic glass, and more specifically, to metallic glass used as a gate electrode layer for a vertical non-volatile memory device.

[0002] As the high integration of semiconductor devices progresses, various non-volatile memory devices, particularly those with vertically stacked structures, are continuously reducing the interlayer thickness between cells to achieve high storage density. Consequently, the thickness of the gate electrode layer is also gradually becoming thinner, and maintaining excellent electrical characteristics even in thinner gate electrode layers to secure high integration density is emerging as an important challenge.

[0003] Currently, tungsten (W) is mainly used in the gate electrode layer of vertical non-volatile memory devices, such as Charge Trap Flash (CTF)-VNAND. However, as the electrode thickness decreases, the grain boundary density increases and the mean free path of electrons shortens, leading to a problem of reduced electrical conductivity. In particular, at thicknesses of 10 nm or less, resistivity increases rapidly, which consequently acts as a limiting factor in realizing high speed and low power characteristics of semiconductor devices.

[0004] Metallic glass, which possesses an amorphous structure without grain boundaries, is attracting attention as a next-generation electrode material to overcome these problems. Since the atomic arrangement of metallic glass is disordered, grain boundaries do not exist; consequently, the mean free path of electrons is maintained even at thin thicknesses, allowing it to maintain superior electrical conductivity compared to crystalline metals. Furthermore, because it can achieve lower resistivity than conventional crystalline metals through specific compositions, it is evaluated as a promising material for improving the performance of highly integrated semiconductor memory devices.

[0005] The present invention was conceived to solve the aforementioned problems, and the present invention can provide a metal glass with an amorphous structure that can replace the existing tungsten electrode to resolve the problem of reduced electrical conductivity (increased resistance) caused by a reduction in the thickness of the gate electrode layer.

[0006] To achieve the above technical problem, a vertical non-volatile memory device according to a preferred example of the present invention is,

[0007] A stacked structure comprising an insulator layer, a channel layer, a tunneling oxide, a charge trap layer, and a blocking oxide formed vertically on a substrate; and

[0008] It includes an interlayer insulating film and a gate electrode layer alternately stacked in the vertical direction outside the blocking oxide film;

[0009] The gate electrode layer comprises amorphous metallic glass, and

[0010] The above metallic glass may be characterized by the absence of grain boundaries.

[0011] The above metal glass may have a resistivity of 30 μΩ·cm or less at a thickness of 10 nm or less of the gate electrode layer.

[0012] The above metallic glass may include an aluminum (Al)-based amorphous alloy.

[0013] Specifically, the metal glass may include an amorphous alloy represented by the following chemical formula 1.

[0014] [Chemical Formula 1]

[0015] Al x M 1 y M 2 z M 3 w M 4 v

[0016] In the above Chemical Formula 1, x is a real number between 50 and 90, y, z, w, and v are each independently real numbers between 0 and 50, x+y+z+w+v=100, and M 1 to M 4 Each is independently one or more of Co, Ni, Y, La, Fe, Ti, Zr, Mg, Cu, and Ag.

[0017] The above-mentioned metallic glass may be characterized by having a supercooled liquid region that exhibits a gentle heat absorption peak in a specific temperature range below the melting point during Differential Scanning Calorimetry (DSC) analysis.

[0018] To achieve the above technical problem, a method for manufacturing a vertical non-volatile memory device according to a preferred example of the present invention is,

[0019] A step of forming a stacked structure comprising an insulator layer, a channel layer, a tunneling oxide, a charge trap layer, and a blocking oxide in a vertical direction on a substrate; and

[0020] The method includes the step of repeatedly forming an interlayer insulating film and a gate electrode layer alternately stacked in a vertical direction outside the blocking oxide film;

[0021] The gate electrode layer comprises an amorphous metallic glass formed using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method, and

[0022] The above-mentioned metallic glass may be characterized by the absence of grain boundaries and maintaining low resistivity even when the thickness of the gate electrode layer is reduced.

[0023] The above metal glass may have a resistivity of 30 μΩ·cm or less at a thickness of 10 nm or less of the gate electrode layer.

[0024] The above metallic glass may include an aluminum (Al)-based amorphous alloy.

[0025] The above metallic glass may include an amorphous alloy represented by the following chemical formula 1.

[0026] [Chemical Formula 1]

[0027] Al x M 1 y M 2 z M 3 w M 4 v

[0028] In the above Chemical Formula 1, x is a real number between 50 and 90, y, z, w, and v are each independently real numbers between 0 and 50, x+y+z+w+v=100, and M 1 to M 4Each is independently one or more of Co, Ni, Y, La, Fe, Ti, Zr, Mg, Cu, and Ag.

[0029] The above chemical vapor deposition (CVD) or atomic layer deposition (ALD) method is,

[0030] (a) a step of introducing each of the multiple types of metal precursors into the chamber sequentially or in combination;

[0031] (b) a step of purging with an inert gas after injecting the metal precursor;

[0032] (c) a step of forming a metal glass thin film layer while supplying a reaction gas; and

[0033] (d) a step of purging with an inert gas again after forming the metal glass thin film layer; comprising,

[0034] The above step (c) is performed at a deposition temperature in the range of 150 to 800 ℃, and

[0035] Steps (a) to (d) above may be repeated several to tens of times.

[0036] The above metal precursor is a metal chloride (MCl) x ), metal fluoride (MF x ), metal-organic compounds (MC x H y ), metal halogen organic compounds (MC x H y A z It is a compound comprising at least one selected from ) and combinations thereof (where x, y, and z are each integers), wherein M may include one or more selected from Al, Co, Ni, Y, La, Fe, Ti, Zr, Mg, Cu, and Ag, and A may be a halogen element selected from F, Cl, Br, and I.

[0037] The above reaction gas may include H2, NH3, SiH4, N2, or a mixture thereof.

[0038] According to the present invention as described above, by applying metallic glass as the gate electrode layer of a vertical non-volatile memory device, the electrical conductivity is maintained excellently due to the absence of grain boundaries even when the thickness of the electrode layer is reduced. In particular, since Al-based metallic glass exhibits excellent electrical conductivity characteristics with a resistivity of 30 μΩ·cm or less even in ultra-thin films, it has the advantage of being favorable for improving the performance of vertical non-volatile memory devices that require high integration through the ultra-thinning of the gate electrode layer.

[0039] The effects of the present invention are not limited to those mentioned above, and include other effects that are clearly understood by a person skilled in the art from the description throughout the specification but are not explicitly mentioned.

[0040] Figure 1 is a schematic diagram showing the structure of a part of a typical vertical non-volatile memory device.

[0041] Figure 2 is a schematic diagram for comparing (a) a crystalline metal atomic structure and (b) a metallic glass atomic structure.

[0042] Figure 3 is a graph showing the resistivity of copper (Cu) crystalline metal and Cu-based metal glass according to thickness.

[0043] FIG. 4 is a schematic diagram illustrating a method for forming metal glass according to one embodiment of the present invention.

[0044] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the attached drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

[0045] Unless otherwise defined, all terms used herein (including technical and scientific terms) may be used in a meaning commonly understood by those skilled in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise. The terms used herein are for describing embodiments and are not intended to limit the present invention. In this specification, the singular form includes the plural form unless specifically stated otherwise in the text.

[0046] As used in the specification, "comprises" and / or "comprising" do not exclude the presence or addition of one or more other components, steps, actions, and / or elements to the mentioned components, steps, actions, and / or elements.

[0047]

[0048] Metal glass used as a gate electrode material

[0049] Figure 1 is a schematic diagram showing the structure of a part of a typical vertical non-volatile memory device.

[0050] Referring to FIG. 1, the structure of a vertical non-volatile memory device, such as a Charge Trap Flash (CTF)-VNAND device, has a form in which memory cells are stacked in multiple layers vertically with respect to a substrate (not shown, e.g., a conductive substrate) to achieve high integration density, and a portion of the cylindrical stacked memory cells is shown in enlarged form.

[0051] The conventional structure on the left of the drawing shows an insulator, channel (Si), tunneling oxide, charge trap layer (SiN), and blocking oxide formed in sequence, with gate electrode layers and insulator layers alternately formed in the vertical direction on the outer side. In this case, a crystalline metal such as tungsten is generally used for the gate electrode layer. The structure with improved integration on the right of the drawing is a structure in which many cells are stacked in the vertical direction by forming the gate electrode layer and the insulator layer (interlayer insulating film) thinner to further increase the integration density of the memory cell.

[0052]

[0053] The main feature of the present invention is to introduce metallic glass without grain boundaries as an electrode material instead of conventional tungsten in order to maintain excellent electrical conductivity even at a thin thickness as a gate electrode layer and effectively solve the problem of increased resistivity caused by grain boundaries.

[0054]

[0055] Metallic glass is an alloy material in which the atomic arrangement has an amorphous structure, unlike crystalline metals. Since these amorphous alloys lack the grain boundaries found in crystalline metals, the mean free path of electrons is not subject to scattering caused by grain boundaries. Consequently, lower resistivity compared to crystalline metals can be achieved even when the thickness of the electrode layer is reduced.

[0056]

[0057] Metallic glass has the following material characteristics.

[0058] First, unlike crystalline alloys, electron scattering can be minimized because it is formed in an amorphous state, resulting in the absence or substantial non-existence of grain boundaries. Conventional crystalline metals consist of numerous grains, and the boundaries between these grains act as a major factor hindering electron movement. In particular, in thin metal films, electron scattering occurring at grain boundaries increases, leading to a problem where electrical resistance rises sharply. However, the metallic glass applied in this invention is formed in an amorphous state, meaning there are no grains; consequently, electron scattering does not occur at grain boundaries. As a result, the mean free path of electrons is not obstructed at grain boundaries, allowing for the maintenance of lower resistivity compared to conventional crystalline metals and improving electrical conductivity.

[0059] Second, Differential Scanning Calorimetry (DSC) analysis clearly reveals a supercooled liquid region with a heat absorption peak in the temperature range below the melting point, thereby confirming the characteristics of the amorphous state. Unlike crystalline metals, metallic glass possesses a specific supercooled liquid region, which allows for the evaluation of its glass-forming ability (GFA). When performing DSC analysis, crystalline metals exhibit a rapid phase transition (from solid to liquid) at the melting point, whereas metallic glass clearly displays a supercooled liquid region with a gradual heat absorption peak in a specific temperature range even below the melting point. This implies that metal atoms maintain an amorphous structure even in the solid state and can exist stably without crystallization.

[0060] Third, since the resistivity characteristics of metallic glass do not change significantly even with a reduction in thickness, excellent electrical properties can be achieved in ultra-thin electrode layers ranging from a few nanometers to tens of nanometers. For example, in the case of general crystalline metals, if the thickness is reduced to 20 nm, say, 10 nm or less, the resistivity increases sharply due to a reduction in the average free path of electrons. This is because the average free path of electrons is significantly affected by scattering at grain boundaries and surfaces. For example, in conventional crystalline metals such as tungsten (W), if the thickness is reduced to 20 nm or less, especially to 10 nm or less, the resistivity increases sharply (approximately 40–100 μΩ·cm), which can hinder high-speed operation and low-power driving of semiconductor devices. On the other hand, metallic glass minimizes grain boundary and surface scattering, so even if the thickness is reduced to 10 nm or less, it can maintain a low resistivity value, specifically 50 μΩ·cm, and more specifically 30 μΩ·cm or less. Accordingly, excellent electrical performance can be maintained even in ultra-thin gate electrode layers. This characteristic can provide superior performance compared to conventional tungsten, such as high-speed operation and low power consumption, when the gate electrode layer needs to be formed thinly in highly integrated semiconductor devices.

[0061] Therefore, the metallic glass applied in the present invention can be utilized as an optimal gate electrode layer material capable of exhibiting excellent performance in next-generation semiconductor devices requiring thin film formation, while maintaining low resistivity compared to conventional crystalline metals.

[0062]

[0063] The above-mentioned metallic glass has compositions in various groups, such as Al-based, Ag-based, Cu-based, Zr-based, Fe-based, Ni-based, Ti-based, and Mg-based systems. Among these, metallic glass using metals with high electrical conductivity as the main composition, such as Al-based, Ag-based, and Cu-based systems, may be suitable. Specifically, the above-mentioned metallic glass may include aluminum (Al)-based metallic glass. Aluminum (Al)-based metallic glass has relatively higher electrical conductivity than other types of metallic glass and can be used most preferably considering cost and performance aspects.

[0064] The above aluminum (Al)-based metal glass may include an amorphous alloy represented by the following chemical formula 1.

[0065] [Chemical Formula 1]

[0066] Al x M 1 y M 2 z M 3 w M 4 v

[0067] In the above Chemical Formula 1, x is a real number between 50 and 90, y, z, w, and v are each independently real numbers between 0 and 50, x+y+z+w+v=100, and M 1 to M 4 Each is independently one or more of Co, Ni, Y, La, Fe, Ti, Zr, Mg, Cu, and Ag.

[0068] Specifically, the aluminum (Al) metal glass may include an amorphous alloy represented by the following chemical formula 2.

[0069] [Chemical Formula 2]

[0070] Al x1 Y y1 Ni z1 M 5 w1 M 6 v1

[0071] In the above chemical formula 2, x1 is a real number between 50 and 90, y1, z1, w1, and v1 are each independently real numbers between 0 and 50, x1+y1+z1+w1+v1=100, and M 5 to M 6 Each is independently one or more of Co, La, Fe, Ti, Zr, Mg, Cu, and Ag.

[0072] More specifically, the aluminum (Al) metal glass is Al 84.5 Y 10 Ni 5.5 , Al 85 Y8Ni5Co2, Al 86 Ni6Y 4.5 Co2La 1.5 , Al 87 Y6Ni5Ag2, Al 81 Y 10 Ni4Cu5, Al 83 Ni6Y4Mg7, Al 84 It may include, but is not limited to, Ni5Y9La2, etc., and the composition may be appropriately optimized and used according to specific required properties, such as resistivity, electrical conductivity, oxidation resistance, mechanical strength, etc.

[0073] In one embodiment, the aluminum (Al) metal glass is Al 84.5 Y 10 Ni 5.5 , Al 85 Y8Ni5CO2 or Al 86 Ni6Y 4.5 Co2La 1.5 It may preferably include the above aluminum (Al) metal glass. However, the present invention may most preferably use the above aluminum (Al) metal glass, but is not limited to this composition and may include and use various metal glasses having a metal with high electrical conductivity as a main component.

[0074]

[0075]

[0076] Figure 2 is a schematic diagram for comparing (a) a crystalline metal atomic structure and (b) a metallic glass atomic structure.

[0077] Referring to Figures 2(a) and 2(b), it can be seen that the atomic structure of crystalline metals has a regular atomic arrangement and contains numerous grain boundaries. These grain boundaries (or crystal grain boundaries) hinder the movement of electrons, increasing scattering, and cause a sharp increase in resistivity, particularly in ultrafine thin films (10 nm or less). On the other hand, the metallic glass structure maintains an amorphous state in which atoms are arranged in a disordered manner, and there are no crystal grain boundaries. Therefore, the electron movement path is not hindered by crystal grain boundaries, allowing for lower resistivity to be maintained.

[0078]

[0079] Figure 3 is a graph showing the resistivity of copper (Cu) crystalline metal and Cu-based metal glass according to thickness.

[0080] Referring to Figure 3, it can be seen that in the case of copper (Cu) crystalline metal (pink curve), the resistivity increases sharply when the thickness is reduced to 10 nm or less. This is because the electrical conductivity decreases due to electron scattering and surface scattering occurring at grain boundaries. On the other hand, in the case of Cu-based metallic glass (blue curve), the change in resistivity is relatively small even when the thickness is reduced, and it is confirmed that stable electrical characteristics are maintained even in ultrathin films. Through these results, it can be seen that when metallic glass is applied as the gate electrode layer of a vertical non-volatile memory device in the present invention, it is possible to maintain low resistivity even at a thin thickness compared to conventional crystalline metal and suppress the decrease in electrical conductivity, thereby improving the performance of the device.

[0081]

[0082]

[0083] Method for manufacturing metallic glass

[0084] FIG. 4 is a schematic diagram illustrating a method for forming metal glass according to one embodiment of the present invention.

[0085] Referring to FIG. 4, a method for forming metallic glass according to one embodiment of the present invention is illustrated. The metallic glass can be formed on a substrate using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process.

[0086] Specifically, during the deposition process, a precursor and a reactant for forming metallic glass are injected into the chamber. The various molecules shown in Fig. 4 represent a metal precursor containing a metal element and a reactant. These precursors and reactants react on the surface of the substrate to form a metallic glass layer.

[0087] The above metal precursor may use multiple types of metal halide compounds. Specifically, the metal precursor is a metal chloride (MCl x ), metal fluoride (MF x ), metal-organic compounds (MC x H y ), metal halogen organic compounds (MC x H y A zIt is a compound comprising at least one selected from ) and combinations thereof (where x, y, and z are each integers), wherein M may include one or more selected from Al, Co, Ni, Y, La, Fe, Ti, Zr, Mg, Cu, and Ag, and A may be a halogen element selected from F, Cl, Br, and I. The metal precursor is, for example, AlCl3, AlF3, CoCl2, CoF2, NiCl2, NiF2, YCl3, YF3, LaCl3, LaF3, FeCl2, FeCl3, FeF2, FeF3, TiCl4, TiF4, ZrCl4, ZrF4, MgCl2, MgF2, CuCl2, CuCl3, CuF2, CuF3, AgCl, AgF, Trimethylaluminum (TMA, Al(CH3)3), Diethylzinc (DEZ, Zn(C2H5)2), Nickelocene (Ni(C5H5)2), Cobaltocene (Co(C5H5)2), Ferrocene (Fe(C5H5)2), Bis(cyclopentadienyl)yttrium (Y(C5H5)2), Methylaluminum dichloride (MeAlCl2), Dimethylaluminum chloride (Me2AlCl), Trimethylaluminum fluoride It may include one or more selected from complex (Al(CH3)3·HF), Titanium tetraisopropoxide chloride (Ti(OiPr)3Cl), and Zirconium tert-butoxide trichloride (Zr(OC(CH3)3)Cl3). More specifically, M may include one or more selected from Al, Co, Ni, Y, and La.The above metal precursor may include one or more selected from AlCl3, AlF3, CoCl2, CoF2, NiCl2, NiF2, YCl3, YF3, LaCl3, and LaF3, and in one embodiment, may include one or more selected from AlCl3, CoCl2, NiCl2, YCl3, and LaCl3 containing metal chloride. Most preferably, as a metal precursor, it may necessarily include TiCl4, ZrCl4, or AlCl3, which have excellent reactivity and high deposition efficiency in CVD or ALD processes.

[0088] The above-mentioned reaction gas performs the role of reacting with the metal precursor to form a metal glass layer and may mainly include compounds such as a reducing gas and a silicon-based reactant. The reducing gas may include H2, NH3, N2, or a mixture thereof, and the silicon-based reactant may include silane (SiH4).

[0089] Inert gases may include Ar, N2, etc., which are used as purge gases to remove residual gases after a reaction and purify the process.

[0090] The present invention will be explained in more detail below using embodiments and comparative examples. However, the following embodiments and comparative examples are for illustrating the present invention and the scope of the present invention is not limited thereto.

[0091]

[0092] Example 1: Method for manufacturing aluminum (Al)-based metallic glass deposited by CVD or ALD method introduced into the gate electrode layer of a CTF-VNAND

[0093] First, a stacked structure is formed in a direction perpendicular to the silicon substrate, comprising an insulator layer such as SiO2 or SiN, a channel layer, a tunneling oxide layer, a charge trap layer, and a blocking oxide layer in sequence. Subsequently, a structure is formed on the outer side in which a gate electrode layer and an insulator layer are alternately formed in a vertical direction. At this time, to form the gate electrode layer, an aluminum (Al)-based metallic glass (e.g., Al) is formed using ALD (Atomic Layer Deposition) or CVD (Chemical Vapor Deposition). 84.5 Y 10 Ni 5.5 , Al 85 Y8Ni5Co2, Al 86 Ni6Y 4.5 Co2La 1.5 ) was deposited.

[0094] Specifically, the deposition chamber is sufficiently purged with Ar or N2 gas. Then, metal halides of AlCl3, YCl3, NiCl2, CoCl2, and LaCl3 are used as metal precursors, and each metal precursor is introduced into the deposition chamber sequentially or in combination for 0.5 to 2 seconds. Afterward, the inside of the chamber is purged again by flowing Ar or N2 gas for 0.5 to 5 seconds. Next, SiH4, H2, or NH3 is injected into the chamber as a reactant for 0.5 to 3 seconds, and after depositing a metal glass thin film layer, Ar or N2 gas is purged again for 0.5 to 5 seconds. The reaction temperature is approximately 150 to 800 °C, and in particular, 300 to 600 °C can be used as the optimal temperature to form a uniform metal glass thin film. This process cycle is repeated to form an aluminum (Al)-based metal glass gate electrode layer of a desired thickness (about 10 to 20 nm).

[0095]

[0096] Al-based metallic glass formed by this method does not have a crystal structure, so grain boundaries do not exist, and excellent electrical conductivity is maintained even when the thickness is reduced.

[0097] Metallic glass composition resistivity (μΩ·cm) Al 84.5 Y 10 Ni 5.5 12Al 85 Y8Ni5Co217Al 86 Ni6Y 4.5 Co2La 1.5 27

[0098]

[0099] Table 1 is data comparing the resistivity characteristics of various aluminum (Al)-based metal glass compositions according to one embodiment of the present invention.

[0100] Referring to Table 1, Al at a thin film thickness of approximately 10–20 nm 84.5 Y 10 Ni 5.5 The metallic glass of this composition has the lowest resistivity of 12 μΩ·cm and exhibits the best electrical conductivity. Al 85 Y8Ni5CO2 is 17 μΩ·cm, Al 86 Ni6Y 4.5 Co2La 1.5 It exhibits a resistivity of 27 μΩ·cm, and while electrical properties vary depending on changes in composition, it can be seen that aluminum (Al)-based metallic glass generally exhibits a resistivity of 30 μΩ·cm or less. When Al-based metallic glass with a resistivity of 30 μΩ·cm or less is used as a gate electrode layer material, it is possible to maintain a lower resistivity compared to conventional tungsten (W)-based electrodes (approx. 40–100 μΩ·cm), which enables high integration of vertical non-volatile memory devices and improved electrical performance in ultrafine thin films (approx. 10 nm).

[0101] Through this embodiment, it was confirmed that a gate electrode layer using Al-based metal glass has excellent electrical conductivity characteristics compared to a conventional tungsten electrode layer, and in particular, maintains excellent performance even with a reduction in the thickness of the gate electrode layer due to high integration.

[0102]

[0103] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive.

Claims

1. A stacked structure comprising an insulator layer, a channel layer, a tunneling oxide, a charge trap layer, and a blocking oxide formed in a vertical direction on a substrate; and It includes an interlayer insulating film and a gate electrode layer alternately stacked in the vertical direction outside the blocking oxide film; The gate electrode layer comprises amorphous metallic glass, and A vertical non-volatile memory device characterized by the absence of grain boundaries in the above-mentioned metallic glass.

2. In Paragraph 1, The above metal glass is a vertical non-volatile memory device having a resistivity of 30 μΩ·cm or less at a thickness of 10 nm or less of the gate electrode layer.

3. In Paragraph 1, The above metallic glass is a vertical non-volatile memory device comprising an aluminum (Al)-based amorphous alloy.

4. In Paragraph 1, A vertical non-volatile memory device comprising an amorphous alloy represented by the following chemical formula 1, wherein the above metallic glass: [Chemical Formula 1] Al x M 1 y M 2 z M 3 w M 4 v In the above Chemical Formula 1, x is a real number between 50 and 90, y, z, w, and v are each independently real numbers between 0 and 50, x+y+z+w+v=100, and M 1 to M 4 Each is independently one or more of Co, Ni, Y, La, Fe, Ti, Zr, Mg, Cu, and Ag.

5. In Paragraph 1, A vertical non-volatile memory device characterized by the above-mentioned metallic glass having a supercooled liquid region that exhibits a gentle heat absorption peak in a specific temperature range below the melting point during Differential Scanning Calorimetry (DSC) analysis.

6. A step of forming a stacked structure comprising an insulator layer, a channel layer, a tunneling oxide layer, a charge trap layer, and a blocking oxide layer in a vertical direction on a substrate; and The method includes the step of repeatedly forming an interlayer insulating film and a gate electrode layer alternately stacked in a vertical direction outside the blocking oxide film; The gate electrode layer comprises an amorphous metallic glass formed using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method, and A method for manufacturing a vertical non-volatile memory device, characterized in that the metal glass has no grain boundaries and maintains low resistivity even when the thickness of the gate electrode layer is reduced.

7. In Paragraph 6, A method for manufacturing a vertical non-volatile memory device, wherein the metal glass has a resistivity of 30 μΩ·cm or less at a thickness of 10 nm or less of the gate electrode layer.

8. In Paragraph 6, A method for manufacturing a vertical non-volatile memory device, wherein the above-mentioned metallic glass comprises an aluminum (Al)-based amorphous alloy.

9. In Paragraph 6, A method for manufacturing a vertical non-volatile memory device, wherein the above-mentioned metallic glass comprises an amorphous alloy represented by the following chemical formula 1: [Chemical Formula 1] Al x M 1 y M 2 z M 3 w M 4 v In the above Chemical Formula 1, x is a real number between 50 and 90, y, z, w, and v are each independently real numbers between 0 and 50, x+y+z+w+v=100, and M 1 to M 4 Each is independently one or more of Co, Ni, Y, La, Fe, Ti, Zr, Mg, Cu, and Ag.

10. In Paragraph 6, The above chemical vapor deposition (CVD) or atomic layer deposition (ALD) method is, (a) a step of introducing each of the multiple types of metal precursors into the chamber sequentially or in combination; (b) a step of purging with an inert gas after injecting the metal precursor; (c) a step of forming a metal glass thin film layer while supplying a reaction gas; and (d) a step of purging with an inert gas again after forming the metal glass thin film layer; comprising, The above step (c) is performed at a deposition temperature in the range of 150 to 800 ℃, and A method for manufacturing a vertical non-volatile memory device by repeating steps (a) to (d) above several to tens of times.

11. In Paragraph 10, The above metal precursor is a metal chloride (MCl) x ), metal fluoride (MF x ), metal-organic compounds (MC x H y ), metal halogen organic compounds (MC x H y A z A compound comprising at least one selected from ) and combinations thereof (where x, y, and z are each integers), A method for manufacturing a vertical non-volatile memory device, wherein the above M comprises one or more selected from Al, Co, Ni, Y, La, Fe, Ti, Zr, Mg, Cu, and Ag, and the above A is a halogen element selected from F, Cl, Br, and I.

12. In Paragraph 10, A method for manufacturing a vertical non-volatile memory device, wherein the above-mentioned reaction gas comprises H2, NH3, SiH4, N2, or a mixture thereof.

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