Perovskite silicon tandem solar cell and manufacturing method for same

Abstract

The present invention provides a perovskite silicon tandem solar cell comprising: a silicon solar cell layer; and a perovskite solar cell layer formed on the silicon solar cell layer, wherein a first inorganic oxide layer and a second inorganic oxide layer are provided between the silicon solar cell layer and the perovskite solar cell layer.

Description

Perovskite silicon tandem solar cell and method for manufacturing the same

[0001] The present invention relates to a perovskite silicon tandem solar cell and a method for manufacturing the same. More specifically, the present invention relates to a perovskite silicon tandem solar cell in which a hole transport layer is bonded to a recombination layer of the perovskite silicon tandem solar cell and a method for manufacturing the same.

[0002]

[0003] Generally, a perovskite silicon tandem solar cell in which a silicon solar cell layer is disposed in the bottom cell and a perovskite solar cell layer is disposed in the top cell can utilize solar energy over a wide wavelength range more effectively by vertically stacking light-absorbing layers having different band gaps. At this time, a recombination layer connecting the top cell and the bottom cell is provided, and a hole transfer layer (HTL) is provided on top of the recombination layer.

[0004] Figure 1 is a schematic diagram of a perovskite silicon tandem solar cell including a conventional recombination layer and a hole transport layer.

[0005] Referring to FIG. 1, a rear passivation layer (2a) and a rear electric field layer (2b) are formed on a rear electrode (1), and the silicon solar cell layer (3), emitter (4), recombination layer (5), hole transport layer (7), self-assembled monolayer (8), perovskite solar cell layer (9), passivation layer (10), second electron transport layer (11a), first electron transport layer (11b), transparent conductive layer (12), protective layer (13), and front electrode (14) are included.

[0006] Conventional perovskite tandem solar cells use a single layer as a recombination layer connecting the lower cell and the upper cell, and the recombination layer performs the function of electrically connecting the open-circuit voltages of the upper cell and the lower cell, physically separating the upper cell and the lower cell and moving electrons and holes from the upper and lower, respectively.

[0007] The aforementioned recombination layer and hole transport layer can be manufactured using various methods, such as modifying the structure and composition of the material; among these, TCO (Transparent Conductive Oxide) and inorganic oxide are typically used for the recombination layer and hole transport layer formed by the sputtering method. However, the recombination layer and hole transport layer, in which the applied TCO and inorganic oxide are deposited as single layers, respectively, present a problem in that it is difficult to simultaneously improve the stability and performance of the solar cell device.

[0008] Therefore, there is an urgent need to develop a method to improve not only the performance but also the stability of perovskite silicon tandem solar cells by improving the structure of the recombination layer and hole transport layer formed through sputtering.

[0009] Korean Patent No. 10-2457927 is disclosed as background technology for the present invention.

[0010]

[0011] The objective of the present invention is to provide a perovskite silicon tandem solar cell capable of improving the performance and ensuring the stability of the solar cell by configuring the recombination layer and the hole transport layer of the perovskite silicon tandem solar cell into multiple layers.

[0012] Another objective of the present invention is to provide a method for manufacturing a perovskite silicon tandem solar cell that can improve the stability of the perovskite solar cell and the silicon solar cell and simultaneously improve cell performance when a recombination layer and a hole transport layer are formed using sputtering of an inorganic material.

[0013] The above and other objectives of the present invention can all be achieved by the present invention described below.

[0014]

[0015] 1. One aspect of the present invention relates to a perovskite silicon tandem solar cell.

[0016] The above perovskite silicon tandem solar cell comprises a silicon solar cell layer; and

[0017] A perovskite solar cell layer formed on the above silicon solar cell layer; comprising

[0018] The above silicon solar cell layer and perovskite solar cell layer include a first inorganic oxide layer and a second inorganic oxide layer.

[0019] 2. In the above 1 embodiment, the first inorganic oxide layer may include a first recombination layer and a first hole transport layer, and the second inorganic oxide layer may include a second recombination layer and a second hole transport layer.

[0020] 3. In the above 1 or 2 embodiments, the ratio of the thickness of the first inorganic oxide layer to the second inorganic oxide layer may be about 1:2.5 to 8.5.

[0021] 4. In the above 1 to 3 embodiments, the first inorganic oxide layer and the second inorganic oxide layer comprise nickel oxide (NiOx), and the second inorganic oxide layer comprises Ni relative to the first inorganic oxide layer 3+ It can contain a larger amount of ions.

[0022] 5. Another aspect of the present invention relates to a perovskite silicon tandem solar cell having a multilayer recombination layer structure.

[0023] The above perovskite silicon tandem solar cell has a back electrode;

[0024] A rear electric field layer (BSF) provided on the above rear electrode;

[0025] A silicon solar cell layer provided on the above-mentioned rear electric field layer;

[0026] An emitter layer provided on the above silicon solar cell layer;

[0027] A first inorganic oxide layer provided on the emitter layer above;

[0028] A second inorganic oxide layer provided on the first inorganic oxide layer;

[0029] A perovskite solar cell layer provided on the second inorganic oxide layer above;

[0030] An electron transport layer provided on the above perovskite solar cell layer;

[0031] A transparent conductive layer provided on the electron transport layer above; and

[0032] It includes a front electrode provided in the above transparent conductive layer.

[0033] 6. In the above 5 embodiments, a self-assembled monolayer (SAM) may be further included between the second inorganic oxide layer and the perovskite solar cell layer, and a passivation layer may be further included between the perovskite solar cell layer and the electron transport layer.

[0034] 7. In the above 5 or 6 embodiments, the first inorganic oxide layer may include a first recombination layer and a first hole transport layer, and the second inorganic oxide layer may include a second recombination layer and a second hole transport layer.

[0035] 8. In the above 5 to 7 embodiments, the thickness of the first recombination layer may be about 15 nm or less, the thickness of the first hole transport layer may be about 10 nm or less, the thickness of the second recombination layer may be about 1 to 2 nm, and the thickness of the second hole transport layer may be about 2 to 3 nm.

[0036] 9. In the above 5 to 8 embodiments, the first recombination layer and the second recombination layer comprise TCO, the first hole transport layer and the second hole transport layer comprise nickel oxide (NiOx), and the second hole transport layer comprises Ni within the nickel oxide structure 2 + : Ni 3 + The ratio of may be approximately 1:1.5 to 2.0.

[0037] 10. In the above 5 to 9 embodiments, the second hole transport layer is Ni as it progresses toward the perovskite solar cell layer 3 +The ratio of may increase.

[0038] 11. In the above 5 to 10 embodiments, the charge rate (FF) of the perovskite silicon tandem solar cell may be about 74% to 75%.

[0039] 12. In the above 5 to 11 embodiments, the photoelectric conversion efficiency (PCE) of the perovskite silicon tandem solar cell may be about 23% or more.

[0040] 13. Another aspect of the present invention relates to a method for manufacturing a perovskite silicon tandem solar cell.

[0041] The above method for manufacturing a perovskite silicon tandem solar cell comprises: (a) a step of forming a back electric field layer on a back electrode;

[0042] (b) a step of forming a silicon solar cell layer on the above-mentioned rear electric field layer;

[0043] (c) a step of forming an emitter layer on the silicon solar cell layer;

[0044] (d) a step of forming a first inorganic oxide layer on the emitter layer;

[0045] (e) forming a second inorganic oxide layer on the first inorganic oxide layer;

[0046] (f) a step of forming a perovskite solar cell layer on the second inorganic oxide layer;

[0047] (g) a step of forming an electron transport layer on the perovskite solar cell layer;

[0048] (h) a step of forming a transparent conductive layer on the electron transport layer; and

[0049] (i) a step of forming a front electrode on the transparent conductive layer; comprising,

[0050] The above first inorganic oxide layer and second inorganic oxide layer are formed by sputtering,

[0051] The first inorganic oxide layer comprises a first recombination layer and a first hole transport layer, and the second inorganic oxide layer comprises a second recombination layer and a second hole transport layer, and

[0052] The first recombination layer and the second recombination layer comprise TCO, and the first hole transport layer and the second hole transport layer comprise nickel oxide (NiOx).

[0053] 14. In the above 13 embodiments, the thickness of the first recombination layer is about 15 nm or less, and the thickness of the first hole transport layer is about 10 nm or less.

[0054] The thickness of the second recombination layer may be about 1 nm to 2 nm, and the thickness of the second hole transport layer may be about 2 nm to 3 nm.

[0055] 15. In the above embodiments 13 or 14, the second hole transport layer is formed during the sputtering process Ni 2+ : Ni 3 + The ratio is controlled to approximately 1:1.5 to 2.0, and as it moves toward the perovskite solar cell layer, Ni 3 + The ratio can be increased.

[0056] 16. In the above 13 to 15 embodiments, the method may further include the step of forming a self-assembled monolayer after forming the second inorganic oxide layer, and further include the step of forming a passivation layer after forming the perovskite solar cell layer.

[0057]

[0058] The perovskite silicon tandem solar cell according to the present invention can greatly improve the performance and stability of the solar cell by having a multilayer recombination layer and a hole transport layer.

[0059] When forming a recombination layer and a hole transport layer through sputtering, it is difficult to improve both the stability of the solar cell device and the performance of the solar cell at the same time, but by forming multiple layers of inorganic oxide layers including TCO and a metal oxide layer, not only the stability but also the performance of the solar cell can be greatly improved.

[0060] The method for manufacturing a perovskite silicon tandem solar cell according to the present invention introduces a multilayer inorganic oxide layer between a silicon solar cell layer and a perovskite solar cell layer, and by controlling the composition and thickness of the inorganic oxide layer, hole transport can be maximized and the deterioration of the device's stability can be effectively prevented.

[0061]

[0062] Figure 1 is a schematic diagram of a perovskite silicon tandem solar cell including a conventional recombination layer and a hole transport layer.

[0063] FIG. 2 is a schematic diagram showing the configuration of a perovskite silicon tandem solar cell according to one embodiment of the present invention.

[0064] FIG. 3 is a schematic diagram showing the configuration of a perovskite silicon tandem solar cell including a multilayer inorganic oxide layer according to one embodiment of the present invention.

[0065] FIG. 4 is a process flowchart of a method for manufacturing a perovskite silicon tandem solar cell according to one embodiment of the present invention.

[0066] Figure 5 is a graph showing the XPS thin film analysis results of a perovskite silicon tandem solar cell according to one embodiment of the present invention.

[0067] Figure 6 compares the initial photoelectric conversion efficiency of a perovskite silicon tandem solar cell according to one embodiment of the present invention with the photoelectric conversion efficiency of a perovskite silicon tandem solar cell according to a comparative example.

[0068] FIG. 7 shows the initial power conversion efficiency (PCE) of a perovskite silicon tandem solar cell according to one embodiment of the present invention and the initial power conversion efficiency after 100 hours.

[0069]

[0070] The present invention will be described in more detail below with reference to the attached drawings. However, the following drawings are provided merely to aid in understanding the present invention, and the present invention is not limited by the drawings. Furthermore, the shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings are exemplary, and the present invention is not limited to the depicted details.

[0071] Throughout the specification, the same reference numerals refer to the same components. Additionally, in describing the present invention, detailed descriptions of related prior art are omitted if it is determined that such detailed descriptions would unnecessarily obscure the essence of the invention.

[0072] Where terms such as 'includes,' 'have,' and 'consists of' are used in this specification, other parts may be added unless 'only' is used. Where a component is expressed in the singular, it includes cases where it is in the plural unless specifically stated otherwise.

[0073] In interpreting the components, they are interpreted to include a margin of error even in the absence of a separate explicit statement.

[0074] In this specification, "a to b" indicating a numerical range is defined as "≥a and ≤b".

[0075] In this specification, all numerical ranges include a 95% standard error range.

[0076]

[0077] A perovskite silicon tandem solar cell according to one embodiment of the present invention will be described in detail below with reference to the drawings.

[0078] FIG. 2 is a schematic diagram showing the configuration of a perovskite silicon tandem solar cell according to one embodiment of the present invention, and FIG. 3 is a schematic diagram showing the configuration of a perovskite silicon tandem solar cell including a multilayer inorganic oxide layer according to one embodiment of the present invention.

[0079] Referring to the drawing, the peroskite silicon tandem solar cell (1000) includes a silicon solar cell layer (200) and a peroskite solar cell layer (600).

[0080] The above silicon solar cell layer (200) can be provided on the back electrode (100).

[0081] The silicon solar cell layer (200) may have one of the structures of known silicon solar cells and is not limited to a specific structure. For example, the silicon solar cell layer (200) may include a homojunction or heterojunction silicon solar cell, and specifically may include a crystalline silicon substrate, a p-type amorphous or crystalline silicon layer, an n-type amorphous or crystalline silicon layer, and an amorphous intrinsic silicon layer.

[0082] In one embodiment, the silicon solar cell layer (200) is formed on a p-type silicon surface n + Al-BSF (Aluminum Back Surface Field), PERC (Passivated Emitter and Rear Cell), PERT (Passivated Emitter Rear Totally Diffused) and PERL (Passivated Emitter and Rear Locally Diffused) structures or SiOx tunneling layer / n through the formation of an emitter (210). ++ It may include a TOPCon (Tunnel oxide passivated contact) structure formed through poly-Si formation.

[0083] The above silicon solar cell layer (200) may be textured on at least one side or another side to improve light efficiency, and an uneven surface is formed in the direction of incident light, thereby increasing the path of light incident on the silicon solar cell layer through the light scattering effect of the light incident through the uneven surface, and improving light collection, so as to increase the absorption rate of sunlight.

[0084] The above perovskite solar cell layer (600) is provided on the silicon solar cell layer (200).

[0085] The above perovskite silicon tandem solar cell (1000) may have a tandem structure in which a perovskite solar cell layer (600) is provided on the upper side and a silicon solar cell layer (200) is provided on the lower side.

[0086] The above perovskite silicon tandem solar cell can have its photoelectric efficiency greatly increased because the perovskite solar cell layer (600) has a relatively large band gap and the silicon solar cell layer (200) includes an absorption layer with a relatively small band gap.

[0087] The first inorganic oxide layer (300) and the second inorganic oxide layer (400) are provided between the silicon solar cell layer (200) and the perovskite solar cell layer (600).

[0088] A recombination layer and a hole transfer layer (HTL) can be provided as single layers between the silicon solar cell layer (200) and the perovskite solar cell layer (600) respectively by a sputtering method; however, since there is a trade-off relationship between improving device stability and improving hole transport capability, a method is required to simultaneously improve device stability and hole transport capability.

[0089] The first inorganic oxide layer (300) and the second inorganic oxide layer (400) can perform the roles of a recombination layer and a hole transport layer, and by forming a multilayer structure including a recombination layer and a hole transport layer, the stability of the perovskite silicon tandem solar cell (1000) can be improved, and at the same time, the hole transport capability can be greatly improved to increase the overall efficiency of the solar cell.

[0090] In one embodiment, the first inorganic oxide layer (300) includes a first recombination layer (310) and a first hole transport layer (320), and the second inorganic oxide layer (400) may include a second recombination layer (410) and a second hole transport layer (420).

[0091] The first inorganic oxide layer (300) above can perform the functions of a recombination layer and a hole transport layer in a perovskite silicon tandem solar cell (1000).

[0092] In one embodiment, the ratio of the thickness of the first inorganic oxide layer (300) to the second inorganic oxide layer (400) is about 1:2.5 to 8.5 (e.g., about 1:2.5, 1:2.6, 1:2.7, 1:2.8, 1:2.9, 1:3.0, 1:3.1, 1:3.2, 1:3.3, 1:3.4, 1:3.5, 1:3.6, 1:3.7, 1:3.8, 1:3.9, 1:4.0, 1:4.1, 1:4.2, 1:4.3, 1:4.4, 1:4.5, 1:4.6, 1:4.7, 1:4.8, 1:4.9, 1:5.0, 1:5.1, It may be 1:5.2, 1:5.3, 1:5.4, 1:5.5, 1:5.6, 1:5.7, 1:5.8, 1:5.9, 1:6.0, 1:6.1, 1:6.2, 1:6.3, 1:6.4, 1:6.5, 1:6.6, 1:6.7, 1:6.8, 1:6.9, 1:7.0, 1:7.1, 1:7.2, 1:7.3, 1:7.4, 1:7.5, 1:7.6, 1:7.7, 1:7.8, 1:7.9, 1:8.0, 1:8.1, 1:8.2, 1:8.3, 1:8.4, or 1:8.5).

[0093] In the case where the thickness of the second inorganic oxide layer (400) is reduced compared to the thickness of the first inorganic oxide layer (300) according to the above range, the first inorganic oxide layer (300) can secure a sufficient thickness to improve the stability of the perovskite silicon tandem solar cell, and without excessively increasing the total thickness of the first inorganic oxide layer (300) and the second inorganic oxide layer (400), it is possible to prevent excessive internal diffusion of inorganic metal ions in the second inorganic oxide layer (400) and improve hole transport capability.

[0094] In one embodiment, the first inorganic oxide layer (300) and the second inorganic oxide layer (400) are nickel oxide (NiO₂). x ...including ), and the second inorganic oxide layer (400) is Ni relative to the first inorganic oxide layer (300). 3 + The ratio of ions can be increased.

[0095] Specifically, the first hole transport layer (320) and the second hole transport layer (420) may include nickel oxide, and the oxidation number of the second hole transport layer (420) may be changed by adjusting the oxygen flow rate during the sputtering process, and Ni 3 + By including a larger amount of ions, the movement of electrons generated in the perovskite solar cell layer (600) can be blocked more effectively, thereby greatly improving the hole transport capability.

[0096]

[0097] Another aspect of the present invention relates to a perovskite silicon tandem solar cell (1000) having a multilayer recombination layer structure.

[0098] The above perovskite silicon tandem solar cell (1000) includes a back electrode (100), a back electric field layer (110), a silicon solar cell layer (200), an emitter layer (210), a first inorganic oxide layer (300), a second inorganic oxide layer (400), a perovskite solar cell layer (600), an electron transport layer (700), a transparent conductive layer (800), and a front electrode (900).

[0099] The above perovskite silicon tandem solar cell may be one in which a pin-shaped perovskite solar cell layer (600) on the top and a silicon solar cell layer (200) on the bottom are combined.

[0100] Specifically, the back electrode (100), back field layer (110), silicon solar cell layer (200) and emitter layer (210) constitute the silicon solar cell, and the first inorganic oxide layer (300), second inorganic oxide layer (400), perovskite solar cell layer (600), electron transport layer (700), transparent conductive layer (800) and front electrode (900) may constitute the perovskite solar cell.

[0101] The above rear electrode (100) may be a metal electrode and may be provided with a metal substrate of any one of aluminum (Al), silver (Ag) and copper (Cu), for example.

[0102] The above back surface field layer (110) is provided on the back electrode (100).

[0103] The above rear electric field layer (110) is electrically grounded to the rear electrode (100) and prevents minority charges from moving to the rear electrode (100), thereby reducing charge recombination and allowing charges to move to the pn junction of the silicon solar cell layer (200), which can increase the efficiency of the solar cell.

[0104] A transparent electrode (120) may be provided together on one side of the above rear electric field layer (110), and the transparent electrode (120) may be a TCO or a carbon-based substrate, and is not particularly limited as long as it is capable of transporting generated charge.

[0105] The silicon solar cell layer (200) is provided on the rear electric field layer (110).

[0106] The above silicon solar cell layer (200) may be a heterojunction silicon solar cell or a homojunction silicon solar cell.

[0107] When the above silicon solar cell layer (200) is a homojunction, an n-type doping region is formed on a p-type silicon substrate, for example, on the surface of the p-type silicon n + An emitter layer (210) can be formed.

[0108] In the case where the above silicon solar cell layer (200) is a heterojunction silicon solar cell, it is highly desirable to form an aluminum back surface field layer (Al-back surface field layer) structure together with the back electrode to form an electric field on the back surface.

[0109] The emitter layer (210) is formed on the silicon solar cell layer (200), and specifically, when the silicon solar cell layer (200) is formed as a p-type semiconductor, it can be formed by doping it as an n-type.

[0110] For example, if the silicon solar cell layer (200) is a p-type semiconductor, the emitter layer (210) can be formed by doping with a group 5 element such as phosphorus (P).

[0111] The first inorganic oxide layer (300) is formed on the emitter layer (210).

[0112] The first inorganic oxide layer (300) above can replace the recombination layer and the hole transport layer.

[0113] The first inorganic oxide layer (300) can replace the recombination layer to improve the stability of the perovskite silicon tandem solar cell and can perform the role of a hole transport layer to improve hole transport capability.

[0114] Specifically, the first inorganic oxide layer (300) includes a first recombination layer (310) and a first hole transport layer (320), and the first recombination layer (310) can improve the stability of the perovskite silicon tandem solar cell (1000), and the first hole transport layer (320) can improve the hole transport capability.

[0115] The first hole transport layer (320) may be disposed on top of the first recombination layer (310).

[0116] The thickness of the first recombination layer (310) may be about 15 nm or less (e.g., about 15, 14, 13, 12, 11, 10, 9, 8, 7, 6, 5, 4, 3, 2 or 1 nm), and the thickness of the first hole transport layer (320) may be about 10 nm or less (e.g., about 10, 9, 8, 7, 6, 5, 4, 3, 2 or 1 nm).

[0117] The thickness of the first recombination layer (310) is about 15 nm or less, for example, about 8 to 15 nm (for example, about 15, 14, 13, 12, 11, 10, 9 or 8 nm), and preferably about 10 nm. When the thickness of the first recombination layer (310) is determined within the above range, the stability of the perovskite silicon tandem solar cell can be improved, and the thickness of the first inorganic oxide layer (300) and the second inorganic oxide layer (400) can be prevented from increasing excessively compared to the conventional recombination layer and hole transport layer.

[0118] The thickness of the first hole transport layer (320) may be about 10 nm or less, for example, 5 to 10 nm (for example, about 5, 6, 7, 8, 9 or 10 nm), and preferably about 6 nm. When the thickness of the first hole transport layer (320) is determined within the above range, the hole transport capability can be improved.

[0119] The first recombination layer (310) may include TCO, and the first hole transport layer (320) may include nickel oxide (NiOx).

[0120] The first recombination layer (310) may be a transparent conductive oxide (TCO), for example, any one of ITO, AZO, FTO, AZO, and GZO, preferably ITO, and the ITO may improve electrical conductivity and optical transparency.

[0121] The first hole transport layer (320) may include nickel oxide, and specifically, in the process of forming the first hole transport layer (320) by sputtering, the oxygen flow rate is controlled so that Ni 2+ and Ni 3 + The air transport capability can be improved by including...

[0122] The second inorganic oxide layer (400) is provided on the first inorganic oxide layer (300).

[0123] The second inorganic oxide layer (400) can be formed on the first inorganic oxide layer (300) to form a multilayer structure, and the stability and hole transport capability of the perovskite silicon tandem solar cell (1000) can be greatly improved.

[0124] The second inorganic oxide layer (400) may include a second recombination layer (410) and a second hole transport layer (420).

[0125] The first hole transport layer (420) may be disposed on top of the second recombination layer (410).

[0126] The thickness of the second recombination layer (410) may be about 1 nm to 2 nm (e.g., about 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, or 2.0 nm), and the thickness of the second hole transport layer (420) may be 2 nm to 3 nm (e.g., about 2.0, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, or 3.0 nm).

[0127] When the thickness of the second recombination layer (410) is within the above range, interdiffusion of nickel at the bonding portion with the first inorganic oxide layer (300) can be effectively prevented.

[0128] When the thickness of the second recombination layer (410) and the second hole transport layer (420) is adjusted to be within the above range, and at the same time the thickness of the second inorganic oxide layer (400) is provided to be smaller than the thickness of the first inorganic oxide layer (300), the first inorganic oxide layer (300) can secure sufficient stability without excessively increasing the thickness of the first inorganic oxide layer (300) and the second inorganic oxide layer (400), and the hole transport capability in the second inorganic oxide layer (400) can be improved more effectively.

[0129] The second recombination layer (410) comprises TCO, and the second hole transport layer (420) comprises nickel oxide (NiOx), wherein Ni within the nickel oxide structure 2 + : Ni 3 + The ratio may be approximately 1:1.5 to 2.0 (e.g., approximately 1:1.5, 1:1.6, 1:1.7, 1:1.8, 1:1.9, or 1:2.0).

[0130] In the second hole transport layer (420) above, Ni within the above range2 + / Ni 3 + When the ratio is adjusted, not only can the movement of electrons be blocked, but the hole transport capability can also be significantly improved, and the effects of the present invention can be realized.

[0131] The second hole transport layer (420) above is Ni as it goes toward the perovskite solar cell layer (600). 3 + The ratio of may increase.

[0132] In the second hole transport layer (420) above, Ni 3 + It has excellent hole transport capability and has an energy level where the conduction band is located close, so it can be better matched with the energy level of the perovskite solar cell layer (600). However, the above Ni 3 + Since it exhibits strong oxidizing power, if it reacts with the organic cation region (A site) of the perovskite solar cell layer (600), it can reduce the stability of the perovskite silicon tandem solar cell; therefore, the thickness of the second recombination layer (410) and the second hole transport layer (420) is limited so that Ni 3 + It can prevent a decrease in stability caused by.

[0133] In one embodiment, a self-assembled monolayer (SAM; 500) may be further included between the second inorganic oxide layer (400) and the perovskite solar cell layer (600).

[0134] A self-assembled monolayer (500) is formed on the second inorganic oxide layer (400), and subsequently, the perovskite solar cell layer (600) can be formed.

[0135] The self-assembled monolayer (500) is a thin layer of monolayer thickness formed by molecules assembling themselves on a surface, for example, it may be provided as an organic monolayer, and is provided between the second inorganic oxide layer (400) and the perovskite solar cell layer (600) to reduce the recombination of minority charges and minimize current loss.

[0136] The above self-assembled monolayer (500) is provided to improve the chemical stability between the second inorganic oxide layer (400) and the perovskite solar cell, and to improve the moisture stability of the perovskite solar cell.

[0137] The self-assembled monolayer (500) may be one or more of Me-4PACz, MeO-2PACz and 2PACz, but is not particularly limited as long as it can improve hole transport capability and block electrons.

[0138] The above perovskite solar cell layer (600) can be formed on the second inorganic oxide layer (400). Specifically, it can be formed on a self-assembled monolayer (500) provided on the second inorganic oxide layer (400).

[0139] The above perovskite solar cell layer (600) may include a perovskite material as a photoactive layer with a structure in which two cations and one anion are combined, and sunlight may be introduced to generate charge.

[0140] The above perovskite material can be represented by the following chemical formula 1.

[0141] [Chemical Formula 1]

[0142] ABX3

[0143] In the above Chemical Formula 1, A is formamidinium (FA), methylammonium (MA), FA x MA (1-x) (0 <X<1), 또는 N(R1)4 +and R1 is a straight-chain alkyl group having 1 to 5 carbon atoms, a branched-chain alkyl group having 3 to 5 carbon atoms, a phenyl group, an alkylphenyl group, or an alkoxyphenyl group, and in the above formula 1, B is Fe 2 + , Co 2 + , Ni 2 + , Cu 2 + , Sn 2 + , Pb 2 + , Bi 2 + , Ge 2 + , Ti 2 + , Eu 2+ or Zr 2 + and X is I - , Cl - or Br - am.

[0144] The above perovskite solar cell layer (600) may be an inverted structure pin or a forward structure nip, and it is preferable that it be an inverted structure pin.

[0145] In the case where the above perovskite solar cell layer (600) has a positive structure NIP structure, the perovskite solar cell layer (600) is provided at the bottom, a second inorganic oxide layer (400) is formed on the perovskite solar cell layer (600), a first inorganic oxide layer (300) is formed on the first inorganic oxide layer (300), and a silicon solar cell layer (200) may be provided on the first inorganic oxide layer (300). At this time, in order to prevent the interdiffusion of nickel, the Ni of the second hole transport layer 3 + Arrange it so that it faces the electron transfer layer, or Ni 3 + Ga Ni 2 +By arranging them alternately, efficiency and stability can be improved through enhanced hole mobility.

[0146] In one embodiment, a passivation layer (610) may be further included between the perovskite solar cell layer (600) and the electron transport layer (700).

[0147] A passivation layer (610) may be provided on the perovskite solar cell layer (600).

[0148] The passivation layer (610) can reduce charge recombination, increase charge extraction efficiency, and improve the stability of the perovskite solar cell layer (600). In particular, when the passivation layer (610) is provided between the electron transport layer (700), it can block the movement of holes.

[0149] The electron transport layer (700) is provided on the perovskite solar cell layer (600).

[0150] Specifically, the passivation layer (610) is provided, and an electron transport layer (700) may be provided on the passivation layer (610).

[0151] The electron transport layer (700) can collect and transport electrons generated by sunlight from the perovskite solar cell layer (600).

[0152] The above electron transport layer (700) may be provided with a first electron transport layer (720) and a second electron transport layer (710).

[0153] The above electron transport layer (700) is provided with a first electron transport layer (720) and a second electron transport layer (710) to prevent hole recombination and further improve electron transport efficiency.

[0154] The above transparent conductive layer (800) is provided on the electron transport layer (700).

[0155] The above transparent conductive layer (800) allows sunlight to be transmitted to the perovskite solar cell layer (600), stabilizes the electron transport layer (700), and supports the front electrode (900).

[0156] The above transparent conductive layer (800) can be selected from any one of ITO (Indium Tin Oxide), ZITO (Zinc Indium Tin Oxide), ZIO (Zinc Indium Oxide), ZTO (Zinc Tin Oxide), GITO (Gallium Indium Tin Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), AZO (Aluminum doped Zinc Oxide), FTO (Fluorine Tin Oxide), and ZnO, taking into account the transmittance of sunlight.

[0157] The above front electrode (900) is provided on the transparent conductive layer (800).

[0158] The above front electrode (900) includes a metal electrode (920) and a transparent electrode (910) and is electrically conductive.

[0159] The front electrode (900) can be electrically connected to an external circuit together with the rear electrode (100).

[0160] In one embodiment, the perovskite silicon tandem solar cell may have a two-terminal structure, and the metal electrode (920) may be directly disposed in a grid shape on the transparent electrode (910).

[0161] The charge rate (FF.) of the perovskite silicon tandem solar cell (1000) may be about 74% to 75% (e.g., about 74, 74.1, 74.2, 74.3, 74.4, 74.5, 74.6, 74.7, 74.8, 74.9, or 75.0%).

[0162] The above perovskite silicon tandem solar cell (1000) has a second inorganic oxide layer (400), and the oxidation number of the nickel oxide is changed so that Ni at the top 3 + The stability of the perovskite silicon tandem solar cell can be significantly improved in the form in which it is arranged, and in particular, the solar cell charge rate (FF) can be greatly improved compared to a tandem solar cell that does not have a multilayer inorganic oxide layer.

[0163] The photoelectric conversion efficiency (PCE) of the above perovskite silicon tandem solar cell (1000) is about 23% or more (e.g., about 23.00, 23.01, 23.02, 23.03, 23.04, 23.05, 23.06, 23.07, 23.08, 23.09, 23.10, 23.11, 23.12, 23.13, 23.14, 23.15, 23.16, 23.17, 23.18, 23.19, 23.20, 23.21, 23.22, 23.23, 23.24, 23.25, 23.26, 23.27, 23.28, 23.29, 23.30, 23.31, 23.32, 23.33, 23.34, 23.35, 23.36, 23.37, 23.38, 23.39, 23.40, 23.41, 23.42, 23.43, 23.44, 23.45, 23.46, 23.47, 23.48, 23.49, 23.50, 23.51, 23.52, 23.53, 23.54, 23.55, 23.56, 23.57, 23.58, 23.59, 23.60, 23.61, 23.62, 23.63, 23.64, 23.65, 23.66, 23.67, 23.68, 23.69, 23.70, 23.71, 23.72, 23.73, 23.74, 23.75, 23.76, 23.77, 23.78, 23.79, 23.80, 23.81, 23.82, 23.83, 23.84, 23.85, 23.86, 23.87, 23.88, 23.89, 23.90, 23.91, 23.92, 23.93, 23.94, 23.95, 23.96, 23.97, 23.98, It can be 23.99% or 24.00%, and can be significantly improved compared to tandem solar cells that do not have a multilayer inorganic oxide layer.

[0164]

[0165] Another aspect of the present invention relates to a method for manufacturing a perovskite silicon tandem solar cell.

[0166] FIG. 4 is a process flowchart of a method for manufacturing a perovskite silicon tandem solar cell according to one embodiment of the present invention.

[0167] Referring to FIG. 4, the method for manufacturing the perovskite silicon tandem solar cell comprises: (a) forming a rear electric field layer on a rear electrode;

[0168] (b) a step of forming a silicon solar cell layer on the above-mentioned rear electric field layer;

[0169] (c) a step of forming an emitter layer on the silicon solar cell layer;

[0170] (d) a step of forming a first inorganic oxide layer on the emitter layer;

[0171] (e) forming a second inorganic oxide layer on the first inorganic oxide layer;

[0172] (f) a step of forming a perovskite solar cell layer on the second inorganic oxide layer;

[0173] (g) a step of forming an electron transport layer on the perovskite solar cell layer;

[0174] (i) a step of forming a transparent conductive layer on the electron transport layer; and

[0175] (j) a step of forming a front electrode on the transparent conductive layer; is included.

[0176] First, a rear electric field layer is formed on the rear electrode (S100).

[0177] It is also possible to simultaneously form a rear field layer during the process of preparing the above-mentioned rear electrode and forming the above-mentioned silicon solar cell layer.

[0178] A silicon solar cell layer is formed on the above rear electric field layer (S200).

[0179] The manufacturing method of the above silicon solar cell layer is not particularly limited.

[0180] An emitter layer is formed on the silicon solar cell layer (S300).

[0181] The above emitter layer is formed by adding a Group 5 element, such as phosphorus, during the process of forming the silicon solar cell layer, n + It is also possible to form an emitter layer.

[0182] A first inorganic oxide layer is formed on the emitter layer, and a second inorganic oxide layer is formed on the first inorganic oxide layer (S400, S500).

[0183] The first inorganic oxide layer and the second inorganic oxide layer are formed by sputtering.

[0184] The first inorganic oxide layer comprises a first recombination layer and a first hole transport layer, and the second inorganic oxide layer comprises a second recombination layer and a second hole transport layer.

[0185] The first recombination layer and the second recombination layer comprise TCO, and the first hole transport layer and the second hole transport layer comprise nickel oxide (NiO₂). x Includes ).

[0186] When the second recombination layer and the second hole transport layer are formed by sputtering, the flow rates of argon (Ar) and oxygen (O2) are controlled so that the Ni included in the second hole transport layer 2 + / Ni 3 + You can adjust the ratio.

[0187] In one embodiment, the second hole transport layer is formed during the sputtering process Ni 3 + The ratio can be increased. Specifically, Ni included in the second hole transport layer mentioned above 3 + The ratio can be increased as it approaches the above perovskite solar cell layer.

[0188] In one embodiment, the thickness of the first recombination layer is about 15 nm or less (e.g., about 15, 14, 13, 12, 11, 10, 9, 8, 7, 6, 5, 4, 3, 2 or 1 nm), the thickness of the first hole transport layer is about 10 nm or less (e.g., about 10, 9, 8, 7, 6, 5, 4, 3, 2 or 1 nm), the thickness of the second recombination layer is about 1 nm to 2 nm (e.g., 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9 or 2.0), and the thickness of the second hole transport layer is about 2 nm to 3 nm (about 2, 2.1, 2.2, It can be formed with 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, or 3.0 nm.

[0189] By controlling the total thickness of the first inorganic oxide layer and the second inorganic oxide layer within the above range, the stability of the perovskite silicon tandem solar cell and the hole transport capability can be improved. In particular, Ni 3 + It can prevent a decrease in stability due to an increase in the ratio.

[0190] In one embodiment, the method may further include the step of forming a self-assembled monolayer after forming the second inorganic oxide layer.

[0191] A perovskite solar cell layer is formed on the second inorganic oxide layer (S500).

[0192] A perovskite solar cell layer can be formed on the second inorganic oxide layer, and the method of forming the perovskite solar cell layer is preferably manufactured by a solution process, but is not particularly limited.

[0193] The method may further include the step of forming a passivation layer after forming the perovskite solar cell layer.

[0194] The stability of the perovskite solar cell layer can be improved by forming the above passivation layer.

[0195] An electron transport layer is formed on the above perovskite solar cell layer (S600).

[0196] An electron transport layer can be formed on the above perovskite solar cell layer, and the electron transport layer can be formed as a first electron transport layer and a second electron transport layer.

[0197] It is also possible to further stabilize the second inorganic oxide layer by forming the self-assembled monolayer mentioned above.

[0198] A transparent conductive layer is formed on the electron transport layer (S700).

[0199] A transparent conductive layer can be formed on the electron transport layer, and the transparent conductive layer can support the electron transport layer.

[0200] A front electrode is formed on the above transparent conductive layer (S800).

[0201] A front electrode can be formed on the transparent conductive layer, and the front electrode can be printed to form a grid.

[0202] Accordingly, a method for manufacturing a perovskite silicon tandem solar cell according to one embodiment of the present invention forms a silicon solar cell layer on the bottom and, when forming a recombination layer and a hole transport layer by sputtering, forms a first inorganic oxide layer and a second inorganic oxide layer, and controls the oxygen flow rate when forming the second inorganic oxide layer so that the Ni of the second hole transport layer 2 + / Ni 3 + By adjusting the ratio, the stability of perovskite silicon tandem solar cells can be improved, making it possible to manufacture large-area tandem solar cells.

[0203]

[0204] Hereinafter, preferred embodiments are presented to aid in understanding the present invention; however, the following embodiments are merely illustrative of the invention and the scope of the invention is not limited to the following embodiments.

[0205]

[0206] Examples

[0207] A p-type silicon solar cell layer is formed on a metal electrode, wherein on the front surface, n + An emitter layer was formed, and an aluminum back-field layer was formed on the back side. An indium tin oxide (ITO) layer was deposited on the completed silicon solar cell layer. At this time, the deposition was performed using a sputtering method within a vacuum chamber under an Ar / O2 mixed atmosphere with an ITO target, and the pressure during the process within the chamber was approximately 10 -3 It was maintained within the Torr range.

[0208] After forming the first recombination layer by ITO deposition, the first hole transport layer was formed by sequentially depositing nickel oxide (NiOx). The nickel oxide (NiOx) layer was also deposited by sputtering using a NiO target in an atmosphere mixed with Ar and O2; at this time, the ratio of O2 flow rate to Ar flow rate was controlled to optimize the chemical composition of NiOx. The deposition was also performed by sputtering under an Ar / O2 mixed atmosphere, and the pressure inside the chamber was approximately 10 -3 The first inorganic oxide layer was completed by maintaining it under optimized conditions within the Torr range.

[0209] After forming the first inorganic oxide layer, a second inorganic oxide layer was formed by sputtering in the same manner, and the second recombination layer was formed by depositing an ITO layer with a thickness of about 1 to 2 nm, and the second hole transport layer was formed by forming nickel oxide with a thickness of about 2 to 3 nm. At this time, the nickel oxide layer was formed by supplying the same amount of Ar as the nickel oxide layer of the first hole transport layer, but reducing the oxygen flow rate.

[0210] A first inorganic oxide and a second inorganic oxide layer were formed by successively depositing them by sputtering.

[0211] Subsequently, a perovskite solar cell layer was formed according to the announced method, an electron transport layer was formed, and a transparent conductive layer and a front electrode were arranged to complete a perovskite silicon tandem solar cell.

[0212]

[0213] Comparative example

[0214] A perovskite silicon tandem solar cell was manufactured using the same method as in the example.

[0215] However, instead of the first and second inorganic oxide layers, a single layer of recombination layer and hole transport layer was formed by a sputtering process.

[0216]

[0217] Preparation Example

[0218] A perovskite silicon tandem solar cell was manufactured in the same manner as in the example, except that the thickness of the second inorganic oxide layer was formed to exceed about 10 nm.

[0219]

[0220] Experimental Example 1

[0221] Ni of the second inorganic oxide layer of the perovskite silicon tandem solar cell according to Example 1 2+ / Ni 3+ The ratio of was checked.

[0222] Figure 5 is a graph showing the XPS thin film analysis results of a perovskite silicon tandem solar cell according to one embodiment of the present invention.

[0223] In FIG. 5, B represents the thin film of the example, and A represents the perovskite silicon tandem solar cell thin film according to the comparative example. Referring to the figure, in the example, when the oxygen flow rate was increased during the formation of the second inorganic oxide layer to supply more oxygen within the thin film, nickel ions tended to exhibit a higher oxidation state. In particular, when the oxygen supply was increased, nickel oxide (NiO x Ni within the ) structure 2 + Ga Ni3 + It was converted to, and the degree of conversion is Ni 2 + / Ni 3 + It was confirmed by the ratio of.

[0224] Finally, Ni 2 + : Ni 3 + The ratio was adjusted to approximately 1:1.5 to 2.0 depending on the oxygen supply.

[0225] Experimental Data Value of light IV (best) Composition of recombination layer and hole transport layer Aging (day) EASweep VocJscF.FEff.RsRshH / I[V][mA / cm 2 ][%][%]Ω·cm 2 Ω·cm 2 [%] A Comparative Example 02 R 1.78 318.1 270.69 22.8 414.08 408 72.45 F 1.77 118.1 369.39 22.28 17.64 308 95 R 1.74 218.1 57 3.8 223.3 37.48 5230 3.17 F 1.69 718.1 67 3.31 22.59 8.63 29 98 Retention Rate (%) 97.70 100.17 104.43 102. 1---B Example 02R 1.766 18.09 74.74 23.8 8.856 454 2.12F 1.738 18.10 74.29 23.37 9.73 49 765R 1.778 18.04 74.66 35.95 8.656 208 2.42F 1.743 18.06 74.27 23.37 9.54 45 32 Retention Rate (%) 100.6 99.7 299.8 9100.2---

[0226] Table 1 above shows the storage stability of perovskite silicon tandem solar cells according to the examples and comparative examples.

[0227] Referring to Table 1, it was confirmed that in the examples, while there was no significant difference in Voc compared to the comparative example, the solar cell fill factor (FF) was significantly improved. This indicates an increase in charge transport across each solar cell layer and a reduction in losses due to recombination between solar cell layers. Furthermore, Ni 3 + It was confirmed that a high concentration of can improve electrical characteristics and reduce contact resistance, ultimately enhancing FF. Meanwhile, the increase in Rs is Ni 3 + It was confirmed that the increase in Rsh was due to the improvement in the interfacial state.

[0228] In the case of Jsc, the difference between the comparative example and the example is approximately 0.1 mA / cm 2 It was confirmed that the two structures were at a similar level, and thus the current extraction amount was confirmed to be similar.

[0229] In the case of H / I, electrical characteristics can be considered more stable as the value decreases, and in the example, Ni 3 + When a second hole transport layer with an increased ratio was introduced, improved stability compared to the comparative example was secured, and it was confirmed that it was even more stable, especially after aging, as the increase was reduced.

[0230] Figure 6 compares the initial photoelectric conversion efficiency of a perovskite silicon tandem solar cell according to one embodiment of the present invention with the photoelectric conversion efficiency of a perovskite silicon tandem solar cell according to a comparative example.

[0231] Referring to FIG. 6, it was confirmed that when a first inorganic oxide layer and a second inorganic oxide layer are added according to the embodiment, the photoelectric conversion efficiency is significantly increased compared to a comparative example including a single layer of recombination layer and hole transport layer, and a photoelectric conversion efficiency (PCE) of 23% or more can be achieved.

[0232]

[0233] Experimental Example 2

[0234] The efficiency of the device according to the thickness range of the inorganic oxide layer of the example was verified.

[0235] Recombination Layer and Hole Transport Layer Composition SamplescanValue of Light IV (TNE_fast)BestMediansweepVocJscFFEff.RsRshH / IVocJscFFEff.RsRshH / I[V]mA / cm 2 [%][%]Ωcm 2 Ωcm 2 [%][V]mA / cm 2 [%][%]Ωcm 2 Ωcm 2 [%] Example R 1.857 17.707 3.38 24.12 7.752 76069 9.40 1.854 17.707 1.13 23.34 8.462 76069 10.27 F 1.853 17.706 6.64 21.858.763 4575 44 1.850 17.706 4.29 20.959.657 99543 Manufacturing Example R1.85917.6861.0920.0811.8615509.121.85417.4753.6717.4215.528969.18F1.85517.6755.6718.2413.0921121.84817.7148.3415.8218.681180

[0236] According to an embodiment, a large-area element (330 cm 2 When the thickness of the second hole transport layer is increased to more than 10 nm according to the manufacturing example compared to a solar cell manufactured by ), the decrease in device efficiency due to the reduction in FF is significant, and it was confirmed that limiting the thickness of the second inorganic oxide layer is essential for improving device efficiency.

[0237]

[0238] Experimental Example 3

[0239] The reliability of the perovskite silicon tandem solar cell under long-term operation was confirmed.

[0240] FIG. 7 shows the initial power conversion efficiency (PCE) of a perovskite silicon tandem solar cell according to one embodiment of the present invention and the initial power conversion efficiency after about 100 hours.

[0241] 85℃ oven, dark, 100hrconditionVoc [V]Jsc [mA / cm 2 ]FF [%]PCE [%]Rs [Ω]Rsh [Ω]H / I Example 1sInitial 1.84 2 19.64 75.32 27.26 5.80 281 38.05 85℃, 100hr 1.79 419.46 69.18 24.16 10.21 30 854.29Delta -2.6 14 -0.92 -8.15 -11.37 76.08 9.70 -46.71 Example 2ndInitial1.82819.6673.3726.375.5731956.4285℃,100hr1.77719.5468.5223.7910.0222494.39Delta-2.779-0.60-6.61-9.7579.86-29.59-31.62Comparative ExampleInitial1.82019.7772.5326.105.85155810.1585℃,100hr1.78519.2356.5019.3924.8311665.54Delta-1.907-2.76-22.11-25.70324.84-25.20-45.42

[0242] Table 3 above shows the efficiency of a perovskite silicon tandem solar cell after approximately 100 hours in an oven at approximately 85°C. Here, the efficiency of a 1-inch device containing a second inorganic oxide layer was measured twice for the example, and the efficiency of a 1-inch device containing a single nickel oxide layer was measured for the comparative example. The initial characteristic value, the characteristic value measured after 100 hours in an oven at 85°C, and the percentage change rate relative to the initial value (Delta, %) were each measured.

[0243] Referring to Figure 7 and Table 3, the example was able to maintain its initial characteristic values ​​because the rate of PCE decline was lower compared to the comparative example. In the comparative example, it was confirmed that in the 1-inch device, the rate of decline in photoelectric conversion efficiency (PCE) in terms of reliability increased significantly as the thickness increased. Meanwhile, in the example, when a nickel oxide layer is added to the second inorganic oxide layer, Ni 3 + It was confirmed that reliability in terms of thermal stability may decrease if the thickness is excessively increased due to the higher amount, and it was confirmed that the thickness of the second inorganic oxide layer must be limited.

[0244] Accordingly, the perovskite silicon tandem solar cell according to the present invention improves the conventional single-layer recombination layer and hole transport layer into a multi-layer recombination layer and hole transport layer to stably maintain the interface state even during the sputtering process, and controls the oxygen flow rate so that the Ni of the second hole transport layer in contact with the perovskite solar cell layer 2 + / Ni 3 + By adjusting the ratio, not only can the storage stability of perovskite silicon solar cells be improved, but the hole transport capability can also be improved.

Claims

1. Silicon solar cell layer; and A perovskite solar cell layer formed on the above silicon solar cell layer; comprising A first inorganic oxide layer and a second inorganic oxide layer between the silicon solar cell layer and the perovskite solar cell layer, Perovskite silicon tandem solar cell.

2. A perovskite silicon tandem solar cell according to claim 1, wherein the first inorganic oxide layer comprises a first recombination layer and a first hole transport layer, and the second inorganic oxide layer comprises a second recombination layer and a second hole transport layer.

3. A perovskite silicon tandem solar cell according to claim 1, wherein the ratio of the thickness of the first inorganic oxide layer to the second inorganic oxide layer is approximately 1:2.5 to 8.

5.

4. In claim 1, each of the first inorganic oxide layer and the second inorganic oxide layer comprises nickel oxide (NiOx), and The second inorganic oxide layer is Ni compared to the first inorganic oxide layer. 3 + Perovskite silicon tandem solar cell containing a larger amount of ions.

5. Rear electrode; A rear electric field layer (BSF) provided on the above rear electrode; A silicon solar cell layer provided on the above-mentioned rear electric field layer; An emitter layer provided on the above silicon solar cell layer; A first inorganic oxide layer provided on the emitter layer above; A second inorganic oxide layer provided on the first inorganic oxide layer; A perovskite solar cell layer provided on the second inorganic oxide layer above; An electron transport layer provided on the above perovskite solar cell layer; A transparent conductive layer provided on the electron transport layer above; and A front electrode provided in the above transparent conductive layer; comprising Perovskite silicon tandem solar cell.

6. In paragraph 5, a self-assembled monolayer (SAM) is further included between the second inorganic oxide layer and the perovskite solar cell layer, and A perovskite silicon tandem solar cell comprising a passivation layer further included between the perovskite solar cell layer and the electron transport layer.

7. A perovskite silicon tandem solar cell according to claim 5, wherein the first inorganic oxide layer comprises a first recombination layer and a first hole transport layer, and the second inorganic oxide layer comprises a second recombination layer and a second hole transport layer.

8. A perovskite silicon tandem solar cell according to claim 7, wherein the thickness of the first recombination layer is about 15 nm or less, the thickness of the first hole transport layer is about 10 nm or less, the thickness of the second recombination layer is about 1 nm to 2 nm, and the thickness of the second hole transport layer is about 2 nm to 3 nm.

9. In claim 7, the first recombination layer and the second recombination layer comprise TCO, and the first hole transport layer and the second hole transport layer comprise nickel oxide (NiO₂ x Includes ), The above second hole transport layer is Ni within the nickel oxide structure 2 + : Ni 3 + A perovskite silicon tandem solar cell having a ratio of approximately 1:1.5 to 2.

0.

10. In claim 9, the second hole transport layer becomes Ni as it progresses toward the perovskite solar cell layer 3+ Perovskite silicon tandem solar cell in which the ratio of 11. A perovskite silicon tandem solar cell according to claim 5, wherein the charge rate (FF) of the perovskite silicon tandem solar cell is about 74% to 75%.

12. A perovskite silicon tandem solar cell according to claim 5, wherein the photoelectric conversion efficiency (PCE) of the perovskite silicon tandem solar cell is about 23% or higher. 13.(a) A step of forming a rear electric field layer on the rear electrode; (b) a step of forming a silicon solar cell layer on the above-mentioned rear electric field layer; (c) a step of forming an emitter layer on the silicon solar cell layer; (d) a step of forming a first inorganic oxide layer on the emitter layer; (e) forming a second inorganic oxide layer on the first inorganic oxide layer; (f) a step of forming a perovskite solar cell layer on the second inorganic oxide layer; (g) a step of forming an electron transport layer on the perovskite solar cell layer; (h) a step of forming a transparent conductive layer on the electron transport layer; and (i) a step of forming a front electrode on the transparent conductive layer; comprising, The above first inorganic oxide layer and second inorganic oxide layer are formed by sputtering, The first inorganic oxide layer comprises a first recombination layer and a first hole transport layer, and the second inorganic oxide layer comprises a second recombination layer and a second hole transport layer, and The first recombination layer and the second recombination layer comprise TCO, and the first hole transport layer and the second hole transport layer comprise nickel oxide (NiOx). Method for manufacturing a perovskite silicon tandem solar cell.

14. In claim 13, the thickness of the first recombination layer is about 15 nm or less, and the thickness of the first hole transport layer is about 10 nm or less, and A method for manufacturing a perovskite silicon tandem solar cell, wherein the thickness of the second recombination layer is about 1 nm to 2 nm and the thickness of the second hole transport layer is about 2 nm to 3 nm.

15. In paragraph 14, the second hole transport layer is Ni during the sputtering process 2 + : Ni 3 + The ratio is controlled to approximately 1:1.5 to 2.0, and as it moves toward the perovskite solar cell layer, Ni 3+ Method for manufacturing a perovskite silicon tandem solar cell with an increased ratio.

16. In claim 14, the method further comprises the step of forming a self-assembled monolayer after forming the second inorganic oxide layer, and A method for manufacturing a perovskite silicon tandem solar cell, further comprising the step of forming a passivation layer after forming the perovskite solar cell layer.

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