Apparatus and method for generating plasma at cryogenic electron temperature in insulated chamber

Abstract

According to one embodiment of the disclosed invention, this apparatus comprises: a first chamber in which a cryogenic electron temperature plasma is generated; a second chamber in which a source plasma is generated; a substrate to which a voltage is applied and on which a process is performed; and a grid positioned between the first chamber and the second chamber, wherein inner walls of the first chamber and the second chamber are deposited with a deposition material or coated with an insulating material.

Description

Device for generating cryogenic electron temperature plasma in an insulating chamber and method for generating it

[0001] The present invention relates to an apparatus and method for generating a cryogenic electron temperature plasma in an insulating chamber, and more specifically, to an apparatus and method capable of controlling the generation of high energy and temperature within the plasma by coating a portion of the inner wall of the chamber with an insulating material or configuring the insulating material.

[0002] Plasma is an ionized gas composed of positive ions, negative ions, electrons, excited atoms, molecules, and highly chemically active radicals. Because it possesses electrical and thermal properties very different from ordinary gases, it is also referred to as the fourth state of matter. Since this plasma contains ionized gas, it is very useful in semiconductor manufacturing processes, such as by accelerating it using electric or magnetic fields or inducing chemical reactions to clean, etch, or deposit wafers or substrates.

[0003] Recently, plasma generators that produce high-density gas plasma are being used in semiconductor manufacturing processes. There are various plasma modules for generating plasma, including inductively coupled plasma (ICP), capacitively coupled plasma (CCP), and cryogenic electron temperature plasma generators.

[0004] Inductively coupled plasma (ICP) is a method that enables high plasma density even under low pressure by generating an induced current within the chamber through an RF coil that encircles the chamber, thereby preventing electrons from colliding with the chamber walls. In other words, since free electrons continuously collide with neutral particles to form plasma without colliding with the chamber walls, it becomes possible to generate a high-density plasma.

[0005] However, inductively coupled plasma has a problem in that the high electron temperature within the plasma can cause substrate damage due to vacuum ultraviolet radiation. Additionally, inductively coupled plasma has a problem in that the high electron temperature can lead to damage caused by charge accumulation, and it is difficult to precisely control ion energy due to the wide range of ion energy distribution.

[0006] Capacitively coupled plasma is formed by a capacitive electric field created by charges distributed on the electrode surface.

[0007] In such capacitively coupled plasmas, increasing the power to increase plasma density causes the electrode plate voltage to increase as well, which has the problem that the substrate may be damaged by ion bombardment. In addition, capacitively coupled plasmas have the problem that the electron temperature within the plasma is high, which can cause substrate damage due to vacuum ultraviolet radiation and damage due to charge accumulation.

[0008] While cryogenic electron temperature plasma generators can suppress various damages caused by high electron temperatures by generating plasma with very low electron temperatures, they have the limitation of being applicable only to metal chambers due to the cryogenic electron temperature. Furthermore, most chambers actually used in processes have been constructed of insulating materials or coated with insulating films to prevent corrosion caused by process gases. However, polymers deposited during the process can cause the inner walls of the chambers to become insulated, presenting a problem in that cryogenic electron temperature plasma cannot be generated in such insulated chambers.

[0009] Conventional plasma processes primarily generate plasma with high electron temperatures, resulting in high energy when ions bombard a substrate and a wide energy distribution, which makes it difficult to control the energy of the ions. Therefore, the present invention provides an apparatus and method that utilize a plasma with a low electron temperature (<1 eV) to control the energy of the ions to a very low level and suppress substrate damage caused by high-energy ions.

[0010] In addition, the present invention provides an apparatus and method in which the width of the ion energy distribution is formed narrowly so that ions can be accurately accelerated only as much as the energy required for the substrate surface reaction, and substrate damage caused by unnecessary reactions can be suppressed.

[0011] In conventional plasma processes, electrons are located at the top of the pattern and ions accumulate at the bottom, causing an electron shadowing effect where a potential difference occurs between the top and bottom of the pattern. Consequently, in etching processes for high aspect ratio structures, the trajectory of ions is bent due to the electron shadowing effect, leading to damage that distorts the etching shape. Therefore, the present invention provides an apparatus and method that can reduce the electron shadowing effect and suppress damage caused by charge accumulation by maintaining a low electron temperature within the plasma.

[0012] Conventional plasma processes have a problem in that, due to the high electron temperature within the plasma causing various reactions, when an excited neutral species transitions to a ground state, light of various wavelengths is emitted and energy is transferred to the substrate, potentially causing damage. Therefore, the present invention provides an apparatus and method that can suppress damage caused by radiation by ensuring that there are almost no electrons with enough energy to cause an excitation reaction in the region where a low electron temperature plasma is generated.

[0013] In conventional plasma processes, conventional low electron temperature plasma generators had the problem of being applicable only when the chamber walls were made of metal. In practice, most process chambers used in industry have been constructed with insulating materials or coated with insulating films to prevent corrosion of the chamber walls. Furthermore, even in chambers made of metal, the walls can become insulated due to polymers deposited during the process; in such cases, existing low electron temperature plasma generation methods could not be applied. Therefore, the present invention provides a device and method that can be applied even to insulated chambers, enabling their use in actual plasma processes and across various industries.

[0014] An apparatus for generating a cryogenic electron temperature plasma in an insulating chamber according to one embodiment of the present invention comprises: a first chamber in which a cryogenic electron temperature plasma is generated; a second chamber in which a source plasma is generated; a substrate to which voltage is applied and a process is performed; and a grid located between the first chamber and the second chamber; wherein a deposition material is accumulated on the inner wall of the first chamber or coated with an insulating material.

[0015] According to one embodiment of the present invention, the grid may be characterized by being placed in a floating state or a grounded state, or having a voltage applied.

[0016] According to one embodiment of the present invention, the substrate may be characterized by being positioned in either a floating state or a grounded state.

[0017] According to one embodiment of the present invention, the material of the grid comprises a metal material, and the metal material may be characterized by comprising any one of molybdenum (MO), stainless steel (SUS), and aluminum (Al).

[0018] According to one embodiment of the present invention, the material of the grid may be characterized by including a ceramic material.

[0019] According to one embodiment of the present invention, a first gas inlet for injecting gas is formed at the upper part of the first chamber, and a second gas inlet for injecting gas is formed at the upper part of the second chamber.

[0020] According to another embodiment of the present invention, the apparatus comprises: a first chamber in which a cryogenic electron temperature plasma is generated; a second chamber in which a source plasma is generated; a substrate to which voltage is applied and a process is performed; and a grid located between the first chamber and the second chamber, wherein a deposited material is accumulated on the inner wall of the second chamber or coated with an insulating material.

[0021] According to another embodiment of the present invention, the grid may be characterized by being placed in a floating state or a grounded state, or having a voltage applied.

[0022] According to another embodiment of the present invention, the grid may be characterized by being positioned in either a floating state or a grounded state.

[0023] According to another embodiment of the present invention, the material of the grid comprises a metal material, and the metal material may be characterized by comprising any one of molybdenum (MO), stainless steel (SUS), and aluminum (Al).

[0024] According to another embodiment of the present invention, the material of the grid may be characterized by including a ceramic material.

[0025] According to another embodiment of the present invention, the first chamber may be characterized by having a first gas inlet formed therein for injecting gas, and the second chamber may be characterized by having a second gas inlet formed therein for injecting gas.

[0026] According to another embodiment of the present invention, it comprises: a first chamber in which a cryogenic electron temperature plasma is generated; a second chamber in which a source plasma is generated; a substrate to which a voltage is applied; and a grid located between the first chamber and the second chamber; wherein the inner walls of the first chamber and the second chamber are coated with an insulating material.

[0027] According to another embodiment of the present invention, the material of the grid comprises a metal material, and the metal material may be characterized by comprising any one of molybdenum (MO), stainless steel (SUS), and aluminum (Al).

[0028] According to another embodiment of the present invention, the material of the grid may be characterized by including a ceramic material.

[0029] According to one embodiment, the present invention utilizes a plasma with a low electron temperature (<1 eV) to control the energy of ions to a very low level and to suppress substrate damage caused by high-energy ions.

[0030] In addition, in the present invention, the width of the ion energy distribution is formed narrowly so that ions can be accurately accelerated only as much as the energy required for the reaction on the substrate surface, and damage to the substrate caused by unnecessary reactions can be suppressed.

[0031] In addition, in the present invention, the electron temperature within the plasma is maintained at a low temperature, thereby reducing the electron shadowing effect and suppressing damage caused by charge accumulation.

[0032] In addition, in the present invention, in the region where a low electron temperature plasma is generated, there are almost no electrons with enough energy to cause an excitation reaction, so the excitation reaction hardly occurs, thereby enabling the suppression of damage caused by radiation.

[0033] Finally, the present invention can be applied to an insulated chamber, allowing for the actual use of plasma processes and enabling utilization across various industries.

[0034] The effects of the present invention are not limited to the technical problems mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description below.

[0035] A brief description of each drawing is provided to help to better understand the drawings cited in the detailed description of the invention.

[0036] FIG. 1 is a drawing for explaining a plasma generator comprising a first chamber coated with an insulating material.

[0037] FIG. 2 is a drawing for explaining a plasma generator including a second chamber coated with an insulating material.

[0038] FIG. 3 is a drawing for explaining a plasma generator comprising a first chamber and a second chamber coated with an insulating material.

[0039] FIG. 4 is a drawing for explaining a plasma generator including a plurality of grids.

[0040] Figure 5 (a) is a diagram illustrating the direction of current flow in a grounded chamber wall, and (b) is a diagram illustrating the direction of current flow in an insulated chamber wall.

[0041] Figure 6 (a) is a diagram illustrating the direction of the ion flux and electron flux when there are no secondary electrons, and (b) is a diagram illustrating the direction of the ion flux, secondary electron flux, and electron flux when there are secondary electrons.

[0042] Hereinafter, embodiments according to the present invention will be described with reference to the accompanying drawings. It should be noted that in assigning reference numerals to the components of each drawing, the same components are given the same reference numeral whenever possible, even if they are shown in different drawings. Furthermore, in describing the embodiments of the present invention, if it is determined that a detailed description of related known components or functions would hinder understanding of the embodiments of the present invention, such detailed description is omitted. Additionally, while embodiments of the present invention will be described below, the technical concept of the present invention is not limited or restricted thereto and can be modified and implemented in various ways by those skilled in the art.

[0043] Furthermore, the terms used in this specification are for describing embodiments and are not intended to limit or / or restrict the disclosed invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as “comprising,” “having,” or “having” are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and do not preclude the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0044] Additionally, throughout the specification, when a part is described as being "connected" to another part, this includes not only cases where they are "directly connected" but also cases where they are "indirectly connected" with other elements in between. Terms including ordinal numbers, such as "first," "second," etc., used in this specification may be used to describe various components, but the components are not limited by these terms.

[0045] Below, embodiments of the present invention are described in detail with reference to the attached drawings so that those skilled in the art can easily implement the invention. Additionally, parts of the drawings that are irrelevant to the description are omitted to clearly explain the invention.

[0046] FIG. 1 is a drawing for explaining a plasma generator including a first chamber coated with an insulating material, FIG. 2 is a drawing for explaining a plasma generator including a second chamber coated with an insulating material, FIG. 3 is a drawing for explaining a plasma generator including a first chamber and a second chamber coated with an insulating material, and FIG. 4 is a drawing for explaining a plasma generator including a plurality of grids.

[0047] First, referring to FIG. 1, a plasma generating device of cryogenic electronic temperature according to the present invention may include a first chamber (100), a second chamber (200), a substrate (20), and a grid (30, 40).

[0048] Specifically, the inner wall of either the first chamber (100) or the second chamber (120) may include an insulating material (120, 220) or be coated with an insulating material (120, 220). Alternatively, the inner wall may be formed by depositing a polymer of an insulating material during the process.

[0049] A grid (30, 40) may be disposed between the first chamber (100) and the second chamber (200). Additionally, a first gas inlet (110) and a second gas inlet (120) may be disposed respectively for injecting gas into the first chamber (100) and the second chamber (200).

[0050] As illustrated in FIGS. 1 to 4, a first gas inlet (110) may be disposed at each end of the upper part of the first chamber (100) of the present invention, and a second gas inlet (210) may be disposed at each end of the upper part of the second chamber (200).

[0051] A substrate (or wafer) (20) according to one embodiment of the present invention is placed parallel to the ground and is positioned on the upper part of the electrode plate, and may be composed of a wafer substrate, a glass substrate, a plastic substrate, etc. for manufacturing various devices such as a semiconductor integrated circuit device, a flat panel display device, a solar cell, etc.

[0052] Additionally, the substrate (20) may include a metal or a metal compound, for example, the substrate (20) may include at least one of copper (Cu), chromium (Cr), nickel (Ni), aluminum (Al), or other metals or alloys thereof.

[0053] In some embodiments, the substrate (20) may comprise silicon (Si), for example, the substrate (20) may comprise a silicon wafer. Additionally, the substrate (20) may be electrically connected to an electrode plate. Furthermore, the substrate (20) of the present invention may include a support that supports the substrate (20) and the electrode plate.

[0054] As illustrated in FIG. 1, in accordance with one embodiment of the present invention, an insulating material may be coated on the inner wall of the first chamber (100) among the regions divided by the grid (30, 40), and a metal material may be formed on the inner wall of the second chamber (200).

[0055] The interior of the chamber can be divided into a source plasma region and a low electron temperature plasma generation region centered around the grid (30, 40). A substrate (20) is positioned inside the first chamber (100) to generate a low electron temperature plasma, and the substrate (20) may be grounded or floating, or a separate voltage and power may be applied.

[0056] Specifically, the substrate may be characterized by having a voltage of several to several thousand volts applied in a floating state, a grounded state, or one of "DC, AC, pulse, or voltage waveform mixed with various frequency components."

[0057] Additionally, the inner wall of the first chamber (100) may be coated with an insulating material, the first chamber may be composed of an insulating material, or a polymer of an insulating material may be deposited during the process. Specifically, the inner wall of the first chamber (100) may be coated or composed of an insulating material, and the insulating material may include either aluminum oxide (Al2O3) or yttrium oxide (Y2O3).

[0058] The first gas inlet (110) of the first chamber (100) is positioned at both ends of the upper part of the first chamber (100) and is installed in the region where low electron temperature plasma is generated, and a desired gas can be injected into the low electron temperature plasma region according to the user's purpose.

[0059] In the first chamber (100), a low electron temperature plasma with an electron temperature of 1 eV or less can be generated in the region below the grid by one or more grids (30, 40). Additionally, the material of the grid may include metal and ceramic materials.

[0060] Hereinafter, cryogenic electron temperature plasma will be defined and explained as plasma having an electron temperature of 1 eV or less.

[0061] Additionally, the first chamber (100) may further include a power supply unit (not shown) to form plasma inside the first chamber (100), and power may be applied to the first chamber (100) and to the substrate (20) through a support.

[0062] Additionally, by adjusting the bias applied to the substrate (20), radicals contained in the cryogenic electron temperature plasma are adsorbed onto the surface of the substrate, and by applying a bias through at least a part of the substrate (20), at least one of the electrons or ions contained in the cryogenic electron temperature plasma is accelerated and collides with the substrate (20) to etch the etching target.

[0063] Referring to FIG. 2, in one embodiment of the present invention, the second chamber (200) is coated with an insulating material only on the inner wall of the second chamber (200) among the areas divided by the grid (30, 40), and the first chamber (100) may be composed of a metal material.

[0064] The second chamber (200) may be a region where source plasma is generated. The source gas plasma may include gas radicals, electrons, and ions. The source gas plasma may be formed by injecting gas into the second chamber (200) through the second gas inlet (210).

[0065] Additionally, as shown in FIG. 2, the inner wall of the second chamber (200) may also be coated with an insulating material, the second chamber (200) may be composed of an insulating material, or a polymer of an insulating material may be deposited during the process. Specifically, the insulating material coated on the inner wall of the second chamber (200) may include either aluminum oxide (Al2O3) or yttrium oxide (Y2O3).

[0066] The second gas inlet (210) of the second chamber (200) is positioned at both ends of the upper part of the first chamber (200) and is installed in the plasma generation area, and a desired gas can be injected into the plasma area with a low electron temperature according to the user's purpose.

[0067] In other words, the first gas inlet (110) and the second gas inlet (210) are respectively installed in a source plasma region and a region where low electron temperature plasma is generated, and a desired gas can be independently injected into the source plasma region and the low electron temperature plasma region according to the user's purpose.

[0068] For example, the second chamber (200) can induce a high-density gas plasma using various sources such as capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron beam source, and microwave plasma. The high-density gas plasma may include adsorption gas plasma and etching gas plasma.

[0069] Referring to FIG. 3, the inner walls of the first chamber (100) and the second chamber (200) may be coated with an insulating material, or the first chamber (100) and the second chamber (200) may be composed of an insulating material.

[0070] Specifically, if the inner walls of both the first chamber (100) and the second chamber (200) are coated with an insulating material, a low-temperature plasma can be formed inside the chamber. Since the plasma is formed at a low electron temperature, the energy of the ions can be controlled to be very low. Therefore, in the present invention, damage to the substrate caused by high-energy ions can be suppressed.

[0071] As shown in FIG. 4, the grid (30, 40) of the present invention is located between the first chamber (100) and the second chamber (200) and may be floating or grounded, or may have various types of voltage applied to it, and may include a metal material.

[0072] For example, the grid (30, 40) may be provided with a metal material having a high secondary electron emission coefficient, and the metal material may be characterized by including any one of molybdenum (MO), stainless steel (SUS), and aluminum (Al).

[0073] Additionally, the grids (30, 40) may be arranged in one or multiple numbers. The grids (30, 40) may include a first grid (30) and a second grid (40). The first grid (30) may be a grid adjacent to the first chamber (100), and the second grid (40) may be a grid adjacent to the second chamber (200). Cryogenic electron temperature plasma can be supplied to the second chamber through the first grid (30) and the second grid (40).

[0074] The plasma having a low electron temperature in the first chamber (100) may include low-energy electrons and high-energy electrons. A voltage power supply may be connected to apply voltage to the first grid (30) and the second grid (40).

[0075] High-energy electrons in a gas plasma with a low electron temperature located inside the first chamber (100) are accelerated by the potential difference between the first grid (30) and the second grid (40), so only the desired amount of energy can be accelerated. After the high-energy electrons passing through the first grid (30) and the second grid (40) collide with the neutral gas in the second chamber (200), the neutral gas is ionized, and ultra-low temperature electrons and ions with a very low electron temperature can be generated.

[0076] Cryogenic electrons generated through ionization in the second chamber (200) and electrons that have come down below the grid in the first chamber (100) but have lost energy by participating in the ionization reaction can form a very low electron temperature. In this case, a cryogenic electron temperature plasma can be formed in the second chamber (200).

[0077] Figure 5 (a) is a diagram showing the direction of current flow in the inner wall of a grounded chamber, and (b) is a diagram showing the direction of current flow in the inner wall of an insulated chamber.

[0078] Specifically, in FIGS. 5(a) and (b), a source plasma region is formed at the top centered on the grid, and a plasma generation region with a low electron temperature is formed at the bottom. Additionally, FIGS. 5(a) shows a grounded chamber wall, and FIGS. 5(b) shows an insulated chamber wall.

[0079] Referring to Fig. 5(a), since the first chamber and the second chamber are in a grounded state, the current is different as shown in the drawing. In the first chamber and the second chamber in a grounded state, current can flow from the plasma through the inner walls of the first chamber and the second chamber, so the net current becomes zero and the quasi-quasi-plasma can be maintained.

[0080] However, as shown in Fig. 5(b), when an insulating material is coated on the inner wall of the chamber, current cannot flow through the inner wall of the chamber due to the insulating material. Therefore, in order to maintain the plasma, the same ion current and electron current must flow from the source plasma region to the low electron temperature plasma generation region, and the plasma can be maintained as secondary electrons generated from the grid contribute to the electron current.

[0081] Figure 6 (a) is a diagram showing the direction of the ion flux and electron flux when there are no secondary electrons, and (b) is an example of a diagram showing the direction of the ion flux, secondary electron flux, and electron flux when there are secondary electrons.

[0082] As shown in Figures 6 (a) and (b), the change in ion and electron flux appears differently depending on whether or not secondary electrons are generated inside the chamber.

[0083] Specifically, in order to maintain the plasma when the chamber walls are insulated, the ion flux and electron flux exiting through the grid in the source plasma region must be the same. Therefore, as shown in Fig. 6(a), when there are no secondary electrons, the electron and ion fluxes moving down the grid may appear to be the same.

[0084] However, as shown in Fig. 6(b), when secondary electrons are generated, a secondary electron beam is generated into the source plasma region, and the electron beam can be generated in the same way as the ion beam below the grid increases.

[0085] Therefore, to balance the electron and ion fluxes, the electron flux below the grid increases, and this increased electron flux contributes to the generation of a low electron temperature plasma.

[0086] As such, according to the present invention, by using a plasma with a low electron temperature (<1 eV), the energy of the ions can be controlled to be very low, and substrate damage caused by high-energy ions can be suppressed. In addition, the width of the ion energy distribution is formed narrowly, so that the ions can be accurately accelerated only to the amount of energy required for the substrate surface reaction, and substrate damage caused by unnecessary reactions can be suppressed.

[0087] Furthermore, according to the present invention, the electron temperature within the plasma is low, thereby reducing the electron shadowing effect and suppressing damage caused by charge accumulation. Additionally, in the region where the low electron temperature plasma is generated, there are almost no electrons with enough energy to trigger an excitation reaction, so the excitation reaction hardly occurs, thereby suppressing damage caused by radiation.

[0088] Finally, since it can be applied even to insulated chambers, actual plasma processes can be utilized, making it applicable across various industries.

[0089] Although the embodiments have been described above with reference to limited examples and drawings, those skilled in the art can make various modifications and variations from the description above. For example, suitable results may be achieved even if the described techniques are performed in a different order than described, and / or if the components of the described system, structure, device, circuit, etc. are combined or assembled in a form different from described, or replaced or substituted by other components or equivalents. Therefore, other implementations, other embodiments, and equivalents to the claims below are also within the scope of the claims.

Claims

1. A first chamber in which cryogenic electronic temperature plasma is generated; A second chamber where source plasma is generated; A substrate to which voltage is applied and a process is performed; and A grid located between the first chamber and the second chamber; including Characterized by having a deposited material accumulated on the inner wall of the first chamber or coated with an insulating material. A device that generates cryogenic electron temperature plasma in an insulating chamber.

2. In Paragraph 1, The above grid is characterized by being positioned in a floating state or a grounded state, or having a voltage applied. A device that generates cryogenic electron temperature plasma in an insulating chamber.

3. In Paragraph 1, The above substrate is characterized by being positioned in either a floating state or a ground state. A device that generates cryogenic electron temperature plasma in an insulating chamber.

4. In Paragraph 1, The material of the above grid includes metal material, and The above metal material is, Characterized by including any one of molybdenum (MO), stainless steel (SUS), and aluminum (Al). A device that generates cryogenic electron temperature plasma in an insulating chamber.

5. In Paragraph 1, The material of the above grid is characterized by including a ceramic material, A device that generates cryogenic electron temperature plasma in an insulating chamber.

6. In Paragraph 1, A first gas inlet is formed at the upper part of the first chamber for injecting gas, and Characterized by having a second gas inlet formed at the upper part of the second chamber for injecting gas. A device that generates cryogenic electron temperature plasma in an insulating chamber.

7. A first chamber where cryogenic electronic temperature plasma is generated; A second chamber where source plasma is generated; A substrate to which voltage is applied and a process is performed; and A grid located between the first chamber and the second chamber; including Characterized by the fact that a deposited material accumulates on the inner wall of the second chamber or is coated with an insulating material. A device that generates cryogenic electron temperature plasma in an insulating chamber.

8. In Paragraph 7, The above grid is characterized by being placed in a floating state or a grounded state, or having voltage applied. A device that generates cryogenic electron temperature plasma in an insulating chamber.

9. In Paragraph 7, The above substrate is characterized by being positioned in either a floating state or a ground state. A device that generates cryogenic electron temperature plasma in an insulating chamber.

10. In Paragraph 7, The material of the above grid includes metal material, and The above metal material is, Characterized by including any one of molybdenum (MO), stainless steel (SUS), and aluminum (Al). A device that generates cryogenic electron temperature plasma in an insulating chamber.

11. In Paragraph 7, The material of the above grid is characterized by including a ceramic material, A device that generates cryogenic electron temperature plasma in an insulating chamber.

12. In Paragraph 7, The first chamber is formed with a first gas inlet for injecting gas, and the second chamber is formed with a second gas inlet for injecting gas, characterized in that A device that generates cryogenic electron temperature plasma in an insulating chamber.

13. A first chamber in which cryogenic electronic temperature plasma is generated; A second chamber where source plasma is generated; A substrate to which voltage is applied and a process is performed; and A grid located between the first chamber and the second chamber; including Characterized by having a deposited material accumulated or an insulating material coated on the inner walls of the first chamber and the second chamber. A device that generates cryogenic electron temperature plasma in an insulating chamber.

14. In Paragraph 13, The material of the above grid includes metal material, and The above metal material is, Characterized by including any one of molybdenum (MO), stainless steel (SUS), and aluminum (Al). A device that generates cryogenic electron temperature plasma in an insulating chamber.

15. In Paragraph 13, The material of the above grid is characterized by including a ceramic material, A device that generates cryogenic electron temperature plasma in an insulating chamber.

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