Thermal heat transfer assembly for semiconductor processing tool
Patent Information
- Application Number
- PCT/US2026/023884
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-04-17
- Filing Date
- 2026-04-15
- Publication Date
- 2026-10-22
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Figure US2026023884_22102026_PF_FP_ABST
Abstract
Description
Docket No. LRC25305PPCTTHERMAL HEAT TRANSFER ASSEMBLY FOR SEMICONDUCTOR PROCESSING TOOLBACKGROUND
[0001] In semiconductor processing tools, heated gases and / or plasmas may be input to a processing chamber for processes such as etching or deposition. These processes may generate substantial thermal loads, thereby heating components of the semiconductor processing tool.SUMMARY
[0002] This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Furthermore, the claimed subject matter is not limited to implementations that solve any or all disadvantages noted in any part of this disclosure.
[0003] One example provides a heat transfer assembly, comprising: a thermal plate defining an internal volume and configured to be mounted to a semiconductor processing tool, the thermal plate comprising a fluid inlet, wherein heat transfer fluid enters the internal volume through the fluid inlet, flows along a flow path within the internal volume, and exits the internal volume through a fluid outlet; and wherein the thermal plate comprises a layered structure formed by a layered manufacturing technique.
[0004] Alternatively or additionally, in some examples, the thermal plate is a first thermal plate, the internal volume is a first internal volume, the fluid inlet is a first fluid inlet, the flow path is a first flow path, and the fluid outlet is a first fluid outlet, and wherein the heat transfer assembly further comprises a second thermal plate affixed to the first thermal plate, the second thermal plate defining a second internal volume and comprising a second fluid inlet, wherein the heat transfer fluid enters the second internal volume through the second fluid inlet, flows along a second flow path within the second internal volume, and exits the second internal volume through a second fluid outlet.Docket No. LRC25305PPCT
[0005] Alternatively or additionally, in some examples, the heat transfer assembly is mounted to a conduit of the semiconductor processing tool, and wherein the first thermal plate and the second thermal plate collectively enclose a segment of the conduit.
[0006] Alternatively or additionally, in some examples, the segment of the conduit comprises a bend at which a longitudinal axis of the conduit changes direction, and wherein the first thermal plate and the second thermal plate enclose the bend .
[0007] Alternatively or additionally, in some examples, the first flow path and the second flow path are in series, wherein the heat transfer fluid exits the first internal volume through the first fluid outlet and enters the second internal volume through the second fluid inlet.
[0008] Alternatively or additionally, in some examples, the heat transfer assembly further comprises an O-ring disposed between the first fluid outlet and the second fluid inlet, at an interface between the first internal volume and the second internal volume.
[0009] Alternatively or additionally, in some examples, the O-ring provides an axial seal, and wherein a compression force is applied to the O-ring along a direction perpendicular to a plane of the O-ring.
[0010] Alternatively or additionally, in some examples, the O-ring provides a radial seal, and wherein a compression force is applied to the O-ring along a direction parallel to a plane of the O-ring.
[0011] Alternatively or additionally, in some examples, the heat transfer assembly further comprises an intermediary conduit that is external to the first thermal plate and the second thermal plate, wherein the intermediary conduit connects the first fluid outlet to the second fluid inlet.
[0012] Alternatively or additionally, in some examples, a width of the internal volume varies along the flow path at one or more flow perturbation features of the thermal plate, and wherein the one or more flow perturbation features promote turbulence in the heat transfer fluid along the flow path.
[0013] Alternatively or additionally, in some examples, each flow perturbation feature comprises a tapered protrusion of a sidewall of the thermal plate into the internal volume, and wherein the width of the internal volume along the flow path decreases and then increases at each flow perturbation feature.Docket No. LRC25305PPCT
[0014] Alternatively or additionally, in some examples, the heat transfer system further comprises a baffle disposed within the internal volume, and wherein the baffle is configured to promote turbulence in the heat transfer fluid along the flow path .
[0015] Alternatively or additionally, in some examples, the thermal plate comprises a plurality of heat dissipation protrusions that extend into the internal volume, thereby increasing a surface area of the thermal plate that contacts the heat transfer fluid.
[0016] Alternatively or additionally, in some examples, the layered manufacturing technique comprises additive manufacturing.
[0017] Alternatively or additionally, in some examples, the layered manufacturing technique comprises joining two or more metallic plate layers.
[0018] Alternatively or additionally, in some examples, the thermal plate is at least partially constructed from stainless steel.
[0019] Another example provides a heat transfer assembly, comprising: a first thermal plate defining a first internal volume, the first thermal plate comprising a first fluid inlet, wherein heat transfer fluid enters the first internal volume through the first fluid inlet, flows along a first flow path within the first internal volume, and exits the first internal volume through a first fluid outlet, wherein a width of the first internal volume varies along the first flow path at one or more flow perturbation features of the first thermal plate, and wherein the one or more flow perturbation features promote turbulence in the heat transfer fluid along the first flow path; and a second thermal plate affixed to the first thermal plate, the second thermal plate defining a second internal volume and comprising a second fluid inlet, wherein the heat transfer fluid enters the second internal volume through the second fluid inlet, flows along a second flow path within the second internal volume, and exits the second internal volume through a second fluid outlet; wherein the first flow path and the second flow path are in series, wherein the heat transfer fluid exits the first internal volume through the first fluid outlet and enters the second internal volume through the second fluid inlet; wherein the first thermal plate and the second thermal plate comprise layered structures formed by a layered manufacturing technique; and wherein the first thermal plate and the second thermal plate at least partially enclose a conduit of a semiconductor processing tool.
[0020] Alternatively or additionally, in some examples, each of the one or more flow perturbation features is a tapered protrusion of a sidewall of the first thermal plateDocket No. LRC25305PPCTinto the first internal volume, and wherein the width of the first internal volume along the first flow path decreases and then increases at each flow perturbation feature.
[0021] Alternatively or additionally, in some examples, the heat transfer assembly further comprises a baffle disposed within the first internal volume, and wherein the baffle promotes turbulence in the heat transfer fluid along the first flow path.
[0022] Another example provides a semiconductor processing tool, comprising: a processing chamber; a conduit for supplying processing chemicals into the processing chamber; and a heat transfer assembly, comprising: a first thermal plate defining a first internal volume, the first thermal plate comprising a first fluid inlet, wherein heat transfer fluid enters the first internal volume through the first fluid inlet, flows along a first flow path within the first internal volume, and exits the first internal volume through a first fluid outlet; and a second thermal plate affixed to the first thermal plate, the second thermal plate defining a second internal volume and comprising a second fluid inlet, wherein the heat transfer fluid enters the second internal volume through the second fluid inlet, flows along a second flow path within the second internal volume, and exits the second internal volume through a second fluid outlet; wherein the first thermal plate and the second thermal plate comprise layered structures formed by a layered manufacturing technique; and wherein the first thermal plate and the second thermal plate at least partially enclose the conduit of the semiconductor processing tool.BRIEF DESCRIPTION OF THE DRAWINGS
[0023] FIG. 1 shows a schematic depiction of an example semiconductor processing tool.
[0024] FIGS. 2A, 2B, 2C, and 2D schematically depict an example heat transfer assembly comprising a layered structure.
[0025] FIGS. 3A, 3B, and 3C schematically depict another example heat transfer assembly used to enclose a segment of a conduit.
[0026] FIGS. 4A, 4B, and 4C schematically depict internal volumes within thermal plates of a heat transfer assembly.
[0027] FIG. 5 schematically depicts an example heat transfer assembly used to enclose a segment of a conduit having a bend.
[0028] FIG. 6 schematically depicts an example interface between two thermal plates of a heat transfer assembly, the interface including an O-ring.Docket No. LRC25305PPCT
[0029] FIG. 7 schematically depicts another example interface between two thermal plates of a heat transfer assembly, the interface including an O-ring.
[0030] FIG. 8 schematically depicts an example heat transfer assembly including an intermediary conduit connecting two thermal plates.DETAILED DESCRIPTION
[0031] The term “atomic layer deposition” (ALD) generally represents a process in which a film is formed on a substrate in one or more individual layers by sequentially adsorbing a precursor to a substrate and then chemically transforming the adsorbed precursor to form a film layer.
[0032] The term “baffle” generally represents a structural element positioned within a fluid path to direct, obstruct, or redistribute the flow of fluid. A baffle may be used to enhance fluid mixing, promote turbulence, and / or regulate thermal exchange within a heat transfer system.
[0033] The term “chemical vapor deposition” (CVD) generally represents a process in which a film is formed on a substrate by exposing the substrate to a flow of reactive gas phase precursors.
[0034] The term “thermal plate” generally represents a thermally conductive structure configured to transfer heat from a component to a heat transfer fluid, or transfer heat from the fluid to the component. A thermal plate may include internal flow passages through which heat transfer fluid circulates.
[0035] The term “heat transfer fluid” generally represents a liquid or gas used to absorb and remove heat from a component or system, or to add heat to a system. A heat transfer fluid may include water, refrigerants, inert gases, or other heat transfer media suitable for dissipating thermal energy.
[0036] The term “conduit” generally represents a structure configured to transport a fluid, gas, or plasma through a system. A conduit may have a tubular shape and may include bends, junctions, or internal features to direct flow and manage thermal loads.
[0037] The term “etch” generally represents removal of a material from a substrate. A dry etch uses gas phase chemicals and / or plasmas to remove material from a substrate.
[0038] The terms “film” or “film layer” generally refer to a layer of material deposited on the substrate (e.g., semiconductor wafer).Docket No. LRC25305PPCT
[0039] The term “flow perturbation feature” generally represents a structural element within a fluid flow path that disrupts or alters the flow pattern of a fluid. A flow perturbation feature may include ridges, baffles, constrictions, or surface textures designed to promote turbulence, enhance heat transfer, or improve mixing.
[0040] The term “fluid inlet” generally represents an opening or port through which a fluid enters a component or system. A fluid inlet may be configured to direct heat transfer fluid into an internal volume of a thermal plate, conduit, or other fluidcarrying structure.
[0041] The term “fluid outlet” generally represents an opening or port through which a fluid exits a component or system. A fluid outlet may be configured to allow heat transfer fluid to exit an internal volume after absorbing heat.
[0042] The term “heat dissipation protrusion” generally represents an extended feature on a surface that increases the surface area available for heat transfer. A heat dissipation protrusion may include fins, pins, or other structures that enhance thermal exchange between a component and a heat transfer fluid.
[0043] The term “layered structure” generally represents an arrangement of multiple layers of material stacked or bonded together. A layered structure may be formed using additive manufacturing, lamination, or other fabrication techniques to achieve specific thermal, mechanical, or functional properties.
[0044] The term “processing chamber” generally represents an enclosure in which chemical and / or physical processes are performed on substrates. Processing tool components such as a showerhead and a pedestal are located within the processing chamber.
[0045] The term “showerhead” generally represents a structure for distributing processing gases across a surface of a substrate. A showerhead can comprise a plenum between a faceplate and a backplate, and plurality of openings formed in the faceplate to emit gases from the plenum toward the substrate.
[0046] The term “substrate” generally represents any structure that can be processed using a processing tool.
[0047] Components of a semiconductor processing tool may be exposed to substantial thermal loads during operation. For instance, one or more conduits may be used to carry heated gases and / or plasmas to a processing chamber for semiconductor processing operations - e.g., plasma may be carried from a remote plasma source to a processing chamber. Thus, the conduits may experience significant heating.Docket No. LRC25305PPCTAdditionally, or alternatively, other components of the semiconductor processing tool besides conduits may be subject to heating while the processing tool is used. This may include, for instance, electrode assemblies (e.g., those used to provide radio frequency (RF) power), gas distribution systems (e.g., showerheads), processing chamber walls and / or liners, substrate handling components (e.g., pedestals), exhaust lines, and / or other structures. Prolonged exposure to high temperatures can have adverse effects on these components - e.g., materials may degrade, seals may become damaged, and / or human workers could be injured by accidental contact with overheated surfaces, as examples.
[0048] With respect to conduits specifically, one potential approach to heat transfer is to clad a larger conduit around the smaller conduit, and fill the intervening space with a heat transfer fluid, such as water. However, this can be difficult to achieve when the conduit includes a bend, as this often requires the larger conduit to be formed in multiple pieces that are welded together, increasing the number of potential weak points at which leaks may form. Heat transfer fluid in the space between the two conduits may exhibit bacterial and / or algae growth, which can interfere with effective thermal regulation. Furthermore, the heat transfer fluid may corrode materials used to form the conduits, depending on the type of materials and heat transfer fluid used.
[0049] As another approach, the conduit could be surrounded with copper heat pipes that are epoxied in place. However, this can also be difficult and expensive to achieve if the conduit includes bends. Furthermore, tight bends in the copper heat pipes can cause a pressure drop in the heat transfer fluid circulating through the heat pipes, requiring a larger and more powerful pump to circulate the fluid. Additionally, the epoxy may weaken or crumble over time, the copper tubing may weaken or crack over time, the copper heat pipes may be relatively expensive to produce, etc.
[0050] Accordingly, the present disclosure describes example heat transfer assemblies suitable for thermally regulating one or more components of a semiconductor processing tool. More particularly, in some examples, a heat transfer assembly includes at least one thermal plate configured to dissipate heat from tool components exposed to high-temperature conditions during operation of the semiconductor processing tool. The thermal plate defines an internal volume through which heat transfer fluid is circulated to absorb and remove heat. The thermal plate is configured to be mounted to a component of a semiconductor processing tool, and is formed using a layered manufacturing technique, such as additive manufacturing orDocket No. LRC25305PPCTdiffusion bonding. This can facilitate easier manufacturing of thermal plates having complex internal geometries.
[0051] In some embodiments, the heat transfer assembly includes a first thermal plate and a second thermal plate affixed to each other, collectively defining separate internal volumes for heat transfer fluid flow. The heat transfer assembly may be mounted to a conduit of the semiconductor processing tool, such that the first and second thermal plates enclose a segment of the conduit. In certain implementations, the conduit transports heated gases and / or plasmas to a processing chamber, and the thermal plates facilitate heat dissipation from the conduit. The heat transfer assembly may also accommodate conduits with bends, ensuring efficient thermal regulation along curved sections where the longitudinal axis of the conduit changes direction. For instance, using layered manufacturing techniques, the thermal plates can be constructed to conform to the shape of the conduit, including allowances for bends in the conduit, weld seams, and / or other features of the conduit.
[0052] In this manner, the disclosed heat transfer assemblies provide several advantages in semiconductor processing applications. By utilizing a layered manufacturing technique, the thermal plate(s) can incorporate complex internal geometries that enhance heat transfer efficiency while maintaining a compact form factor. The inclusion of flow perturbation features, baffles, and / or heat dissipation protrusions promotes turbulence in the heat transfer fluid, improving thermal exchange and reducing hotspots. The ability to enclose a conduit, including sections with bends, helps to ensure effective thermal regulation of plasma-carrying pathways, thereby mitigating thermal stress and prolonging the lifespan of system components.
[0053] The present disclosure primarily focuses on scenarios where the heat transfer assembly is used to cool portions of a semiconductor processing tool that experience heating during use. However, it will be understood that the structures described herein may additionally or alternatively be used for heating, rather than cooling. For instance, a heat transfer assembly may include two or more thermal plates having internal volumes, through which fluid may be circulated. Such an assembly may be used to provide either cooling or heating, depending on the temperature of the fluid. For instance, when the fluid is cooler than the components of the semiconductor processing tool to which the assembly is mounted, a cooling effect is provided. When the fluid is hotter than the components of the semiconductor processing tool, a heating effect may be provided.Docket No. LRC25305PPCT
[0054] Referring now to FIG. 1, an example semiconductor processing tool 100 for processing a substrate is shown. The semiconductor processing tool 100 can be configured for thermal or plasma-enhanced chemical vapor deposition (CVD), including metal organic chemical vapor deposition (MOCVD), thermal or plasma-enhanced atomic layer deposition (ALD), and / or other substrate processes. The processing tool 100 comprises a processing chamber 102 including a showerhead 104. The showerhead 104 comprises a stem 106 connected to the processing chamber 102. The showerhead 104 also includes a lower portion 110 that extends radially outwardly from a bottom of the stem 106. It will be understood that the specific configuration shown in FIG. 1 is illustrative, and that the arrangements described herein can be applied to a wide variety of different semiconductor processing scenarios.
[0055] The processing tool 100 further includes a pedestal 114. The depicted pedestal 114 is configured as an electrostatic chuck (ESC) pedestal. During operation, a substrate 116 is arranged on the pedestal 114. Clamping electrodes 118 may be biased to electrostatically attract the substrate 116 during processing to hold the substrate 116 securely. In other examples, other types of pedestals can be used.
[0056] The processing tool 100 is configured to perform plasma-enhanced substrate treatments, such as plasma-enhanced atomic layer deposition (PEALD) and / or plasma-enhanced chemical vapor deposition (PECVD). Thus, the processing tool 100 includes an RF generating system 120 to generate and output RF power. In this example, the pedestal 114 is configured as a powered electrode, and the showerhead 104 is grounded. In other examples, the showerhead 104 can receive power from the RF generating system 120, and the pedestal 114 can be grounded. The RF generating system 120 includes an RF generator 122 that generates RF power. The RF generating system 120 further includes a matching and distribution network 124.
[0057] The substate processing tool further includes an actuator 126 and a lift pin assembly 128. The lift pin assembly includes P lift pins 128, where P is an Integer greater than 2. The actuator 126 and the lift pin assembly 128 are used during loading and unloading of the substrate 116 from the chamber.
[0058] The processing tool 100 further comprises a gas delivery system 130. The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ... , and 132-N (collectively gas sources 132), where N is an integer greater than zero. The gas sources 132 supply one or more processing gases such as deposition precursors, purge gas, etch gas, etc. In some examples, vaporized precursors may also be used (notDocket No. LRC25305PPCTshown). The gas sources 132 are connected by valves 134-1, 134-2, ... , and 134-N (collectively valves 134), mass flow controllers 136-1, 136-2, ... , and 136-N (collectively mass flow controllers 136), and valves 138-1, 138-2, ... , and 138-N (collectively valves 138) to a manifold 140. An output of the manifold 140 is fed by the gas delivery system 130 to the processing chamber 102. For example, the output of the manifold 140 is fed to the showerhead 104.
[0059] A heater controller 142 (“HC”) is connected to resistive heaters arranged in the pedestal 114. The heater controller 142 can be used to control a temperature of the pedestal 114. In addition, the pedestal 114 can include internal channels (not shown) to flow a fluid from a fluid source (not shown) to provide further control of the pedestal 114 and substrate 116 temperatures.
[0060] A valve 150 and pumping system 152 can be used to evacuate reactants and products from the processing chamber 102 and / or to control pressure in the processing chamber 102. A controller 160 can be used to control the various components of the processing tool 100 described herein. For example, the controller 160 can cause a robot arm 170 to load the substrate 116 onto the pedestal 114, and unload the substrate 116 from the pedestal 114. The controller 160 communicates with the gas delivery system 130 to control supply of process, purge and / or inert gases. The controller communicates with the valve 150 and pump 152 to control pressure within the processing chamber and / or evacuation of reactants. The controller 160 also causes a voltage source 172 to output voltage to the electrodes 118 to clamp and unclamp the substrate 116.
[0061] As discussed above, components of the semiconductor processing tool 100 may be subjected to substantial heat during operation. For instance, in FIG. 1, a conduit 174 may be used to transport processing chemicals, such as heated gases and / or plasmas, into the processing chamber 102. Prolonged exposure to high temperatures can have adverse effects on conduit 174 and / or other components of the semiconductor processing tool 100.
[0062] Accordingly, FIGS. 2A-2D schematically depict one non-limiting example of a thermal heat transfer assembly 200. It will be understood that heat transfer assembly 200 shown in FIGS. 2A-2D, as well as the other heat transfer assemblies illustrated with respect to FIGS. 3A-8, is highly simplified for the sake of illustration, and presented as a non-limiting example. In other implementations, the size, shape, appearance, and / or distribution of components of a heat transfer assembly may differDocket No. LRC25305PPCTfrom those described herein, while still enabling flow of a heat transfer fluid through an internal volume.
[0063] As shown, the thermal heat transfer assembly 200 includes a thermal plate 202, which is formed from several layers 204A, 204B, and 204C. In other words, the thermal plate 200 comprises a layered structure formed by a layered manufacturing technique. In this example, the layered manufacturing technique comprises joining multiple plate layers 204A, 204B, and 204C (e.g. metallic plate layers or other suitably thermally conductive plate layers) together using a suitable joining technique. As nonlimiting examples, suitable joining techniques to join metallic plate layers may include diffusion bonding, brazing, and / or forge welding. This can facilitate easier manufacturing of thermal plates that include internal volumes through which heat transfer fluid can be flowed, as compared to other manufacturing techniques, such as casting or computer numerical control (CNC) machining.
[0064] The thermal plate 202 may be constructed from any suitable materials. As one non-limiting example, the thermal plate 202 may be constructed at least partially from stainless steel. Stainless steel is relatively corrosion resistant and may beneficially inhibit algae and / or bacterial growth in the heat transfer fluid. While stainless steel has relatively lower thermal conductivity as compared to some other metals (such as copper), the techniques described herein may enable a relatively larger volume of heat transfer fluid to be circulated through the thermal plate, which can improve heat dissipation and offset the lower thermal conductivity of stainless steel. It will be understood, however, that stainless steel is only one example of a suitable material that may be used to form the thermal plates. In other examples, other suitable materials may be used, such as other suitable metals (e.g., copper, nickel alloys, titanium), and / or suitable polymers (e.g., polytetrafluoroethylene (PTFE)).
[0065] Heat transfer assembly 200 includes a fluid inlet 206 allowing heat transfer fluid to enter the internal volume of the thermal plate 202, flow along a flow path within the internal volume, and exit the thermal plate 202 through a fluid outlet 208. Any suitable heat transfer fluid may be used. For instance, in some examples, the heat transfer fluid may include water. As another example, the heat transfer fluid may include ethylene glycol. Furthermore, it will be understood that the heat transfer fluid need not always be a liquid. For instance, in some examples, the heat transfer fluid may include air. While air is relatively less effective at dissipating heat as compared to other suitable fluids (such as water), air may nonetheless be suitable as a heat transfer fluidDocket No. LRC25305PPCTin some implementations, particularly when a relatively large volume of air can be circulated through the thermal plate 202 at a relatively high flow rate.
[0066] The heat transfer assembly 200 is configured to be mounted to one or more suitable components of a semiconductor processing tool. To this end, heat transfer assembly 200 includes a plurality of mounting holes. One such mounting hole formed in plate 204A is labeled as mounting hole 210A, while plates 204B and 204C include complementary mounting holes 210B and 210C, as is shown in FIG. 2B. It will be understood that the shape, size, and distribution of the mounting holes may vary depending on the implementation - e.g., depending on the type of component to which the heat transfer assembly is mounted. Furthermore, while this example approach uses mounting holes through which suitable mounting hardware (e.g., bolts, screws, or other fasteners) is inserted, it will be understood that this is only a non-limiting example, as a thermal plate may be mounted in any suitable way, and may be mounted to any suitable components of the semiconductor processing tool.
[0067] As discussed above, the thermal plate 202 defines an internal volume through which heat transfer fluid may be flowed. This is illustrated in more detail with respect to FIG. 2B, showing an exploded view of heat transfer assembly 200, in which the various plates 204A, 204B, and 204C have been separated. As shown, a channel 212 is formed in plate 204B, thereby defining an internal volume within the thermal plate 202. It will be understood that the specific shape, size, and appearance of channel 212 is one example, and that other suitable geometries may be used in other implementations. In some examples, the channel 212 may extend completely through plate 204B, such that the internal volume is defined by the lower surface of plate 204A, the upper surface of plate 204C, and the walls of the channel formed in plate 204B. In other examples, the channel 212 may not extend completely through the plate - e.g., the channel may be implemented as a groove formed in plate 204B, rather than a hole that extends through plate 204B.
[0068] The channels or grooves used to form the internal volume within the thermal plate may be constructed in any suitable way. As one example, laser cutting may be used to form a channel in a plate layer. As another example, the thermal plate may be constructed using additive manufacturing, in which material is deposited one layer at a time to form a thermal plate having a desired geometry, including channels or grooves that define an internal volume.Docket No. LRC25305PPCT
[0069] In the example of FIG. 2B, the thermal plate 202 includes three layers of plates 204 A, 204B, and 204C joined together, and the channel 212 defining the internal volume is formed in the middle plate 204B. It will be understood, however, that this is presented for example. In other scenarios, another suitable number of plate layers may be joined together to form a thermal plate, including more than three layers. Furthermore, the internal volume within the thermal plate 202 may be defined by channel or groove features formed in any or all of the plate layers of the thermal plate 202. For instance, in another example, the thermal plate may include five layers total, and the internal volume may be formed by manufacturing complementary grooves or channels in two or more of the internal layers of the thermal plate. In this manner, when the plates are joined, the complementary channels may be aligned, thereby forming an internal volume within the thermal plate that intersects two or more of the internal plate layers.
[0070] Heat transfer fluid input to the inlet 206 may flow through the internal volume and exit the thermal plate 202 through outlet 208. This is schematically illustrated with respect to FIG. 2C, showing another view of channel 212 formed in plate 204B of thermal plate 202. FIG. 2C includes representations of the inlet 206 and the outlet 208. As shown, the channel 212 defines a flow path 214 along which heat transfer fluid may flow into the internal volume via inlet 206, and later exit the internal volume via outlet 208. Along the flow path 214, the heat transfer fluid may absorb thermal energy from the walls of the thermal plate 202, thereby cooling any components of the semiconductor processing tool contacting the thermal plate 202. In other implementations, heated fluid may be circulated through the thermal plate to thereby heat components of the semiconductor processing too. Notably, in this configuration, a relatively larger volume of heat transfer fluid may be flowed through the thermal plate 202 as compared to other approaches (e.g., copper heat pipes), which may facilitate more effective thermal regulation of the semiconductor processing tool. Furthermore, heat transfer fluid flowing along the flow path 214 may exhibit relatively less pressure drop as compared to other arrangements where narrower channels and / or tighter bends are used.
[0071] FIG. 2D schematically shows a cross-sectional view of thermal plate 202 to further illustrate the thermal plate’s layered construction. As shown, the three metallic layers 204A, 204B, and 204C of the thermal plate 202 are joined together, and a channel 212 is formed in the middle layer 204B. This forms an internal volume withinDocket No. LRC25305PPCTthe thermal plate 202 through which heat transfer fluid may be flowed. As discussed above, in this example, three plate layers are used, and the channel 212 is formed only in the central layer. In other examples, other arrangements may be used. For instance, four or more plate layers may be joined together to form the thermal plate 202, and complementary grooves or channels may be formed in two or more of the internal plate layers, to thereby form the internal volume.
[0072] In some examples, the thermal plate 202 may be machined to have a desired geometry, which can beneficially facilitate use of the thermal plate as a block that contacts two or more heated surfaces at the same time. This is the case in FIG. 2D, in which the thermal plate 202 includes a machined edge 216. This may enable the profile of the thermal plate 202 to conform better to the geometry of the surface(s) of the semiconductor processing tool that it is used to cool or otherwise thermally regulate. It will be understood that the specific geometry depicted in FIG. 2D is one non-limiting example, and that suitable machining processes may be used to alter the geometry and dimensions of a thermal plate in various suitable ways, to thereby improve the thermal plate’s efficacy in regulating the temperature of components of a semiconductor processing tool.
[0073] In some implementations, a heat transfer assembly can include a single thermal plate. In other examples, the heat transfer assembly may include two or more thermal plates that are attached to one another. One such example will now be described with respect to FIGS. 3A-3C. Specifically, FIG. 3A schematically shows an example heat transfer assembly 300. In this example, the heat transfer assembly includes a first thermal plate 302 A and a second thermal plate 302B affixed to the first thermal plate 302A. The two thermal plates may be affixed to one another in any suitable way. In the example of FIG. 3A, the second thermal plate 302B includes a mounting hole 304, through which suitable mounting hardware (e.g., bolts, screws, other fasteners) may be inserted. In other examples, the two thermal plates may be attached to one another in another suitable way.
[0074] In FIG. 3A, the heat transfer assembly 300 is mounted to a conduit 306 of a semiconductor processing tool, such that the first thermal plate 302 A and the second thermal plate 302B collectively enclose a segment of the conduit 306. In this manner, the heat transfer assembly 300 may be used to dissipate heat from the conduit 306. In the example of FIG. 3 A, the conduit 306 extends in a straight line - e.g., it does not bend along its length. In other examples, however, thermal plates as describedDocket No. LRC25305PPCTherein may be constructed to accommodate bends in a conduit. One such example will be described and illustrated below with respect to FIG. 5.
[0075] As with thermal plate 202 described above, the first and second thermal plates 302A and 302B may comprise a layered structure formed by a layered manufacturing technique. As one non-limiting example, first and second thermal plates 302A and 302B may be constructed using additive manufacturing, in which material is deposited layer by layer to progressively form a desired structure. This may beneficially facilitate construction of thermal plates having complex internal geometries, as will be described in more detail below. The thermal plates 302 A and 302B may be constructed from any suitable material. As discussed above, in some examples, thermal plates may be constructed from stainless steel, which is relatively corrosion resistant and may inhibit algae and bacterial growth in the heat transfer fluid. In other examples, another suitable metallic or polymeric material may be used.
[0076] As shown in FIG. 3A, the heat transfer assembly 300 includes a fluid inlet 308 and a fluid outlet 310. Fluid inlet 308 enables heat transfer fluid to enter an internal volume of the first thermal plate 302A. Fluid outlet 310 enables heat transfer fluid to exit a second internal volume of the second thermal plate 302B. In this example, the two internal volumes are connected in series, such that heat transfer fluid exiting the first internal volume of the first thermal plate 302A subsequently enters the second internal volume of the second thermal plate 302B. In other words, the first thermal plate 302A includes both a fluid inlet (e.g., fluid inlet 308) and a fluid outlet (not visible in FIG. 3A), while the second thermal plate 302B includes its own corresponding fluid inlet (not visible in FIG. 3 A) and a fluid outlet (e.g., fluid outlet 310).
[0077] This is illustrated in more detail with respect to FIGS. 3B, and 3C, which provide separate views of the first and second thermal plates 302 A and 302B. Specifically, FIG. 3B shows first thermal plate 302 A, while FIG. 3C shows second thermal plate 302B. With respect to FIG. 3B, the first thermal plate 302A includes fluid inlet 308 and a first fluid outlet 312. With respect to FIG. 3C, the second thermal plate 302B includes a second fluid inlet 314 and fluid outlet 310. As discussed above, each thermal plate has its own respective internal volume, and these volumes are connected in series - e.g., heat transfer fluid exiting the first internal volume via the first fluid outlet 312 enters the second internal volume via the second fluid inlet 314.
[0078] Any suitable interface may be used between the two internal volumes of the two thermal plates 302A and 302B. In the example of FIG. 3B, an O-ring 316 isDocket No. LRC25305PPCTdisposed between the first fluid outlet 312 and the second fluid inlet 314. This can beneficially facilitate an air-tight seal between the first internal volume and the second internal volume, to thereby mitigate or prevent leakage of the heat transfer fluid at the interface between the two thermal plates 302 A and 302B. The specific geometry of the interface, including the placement and orientation of the O-ring, may vary depending on the implementation. Two example configurations will be described and illustrated in more detail below with respect to FIGS. 6 and 7. In the example of FIGS. 3B and 3C, the interface between the first and second volumes is internal to the heat transfer assembly 300 - e.g., it is occluded from view when the thermal plates 302A and 302B are affixed to one another. However, in other examples, the interface between the first internal volume and the second internal volume may include an intermediary conduit that is external to the two thermal plates. One such example will be described and illustrated in more detail below with respect to FIG. 8.
[0079] FIGS. 4A-4C provide cross-sectional views of first thermal plate 302A and second thermal plate 302B, to reveal the first and second internal volumes within the first and second thermal plates 302 A and 302B. Specifically, as shown in FIG. 4 A, the first thermal plate 302 A includes a first internal volume 400 A, and defines a first flow path 402 A for heat transfer fluid between the fluid inlet 308 and the fluid outlet 312. In FIG. 4B, the second thermal plate 302B includes a second internal volume 400B, and defines a second flow path 402B for heat transfer fluid between the second fluid inlet 314 and the second fluid outlet 310. As discussed above, in this example, the two flow paths 402A and 402B are in series, such that heat transfer fluid exiting the first fluid outlet 312 enters the second fluid inlet 314.
[0080] To enhance heat transfer, the internal volumes of the thermal plates may include flow perturbation features that promote turbulence in the heat transfer fluid. These features may include tapered protrusions that locally vary the width of the internal volume, causing the flow path to constrict and expand, thereby promoting turbulence in the flow and increasing convective heat transfer. Additionally, or alternatively, a baffle may be positioned within the internal volume to further disrupt fluid flow and improve thermal exchange. Additionally, or alternatively, heat dissipation protrusions (such as pins or fins) may extend into the internal volume, increasing the surface area available for heat transfer between the thermal plate and the heat transfer fluid.Docket No. LRC25305PPCT
[0081] These aspects are schematically illustrated with respect to FIGS. 4A, 4B, and 4C. With respect to FIG. 4A, as shown, the width of internal volume 400A varies along the flow path 402A at various flow perturbation features of the thermal plate 302 A. Two of these flow perturbation features are labeled in FIG. 4 A as flow perturbation features 404A and 404B. In FIG. 4B, the second internal volume 400B similarly includes flow perturbation features 404C and 404D. These may beneficially promote turbulence in the heat transfer fluid along each flow path 402A and 402B, which improves heat dissipation efficacy and reduces the likelihood that stagnant heat transfer fluid will exhibit bacterial and / or algae growth.
[0082] In this example, each flow perturbation feature 404A-D is a tapered protrusion of a sidewall of the thermal plate 302A / 302B into the internal volume 400A / 400B, such that the width of the internal volume 400A / 400B along the flow path 402A / 402B decreases and then increases at each flow perturbation feature 404A-D. For instance, in FIG. 4A, the flow perturbation features 404A and 404B are implemented as protrusions of a sidewall 406 A of the thermal plate 302 A, and have a generally triangular profile - e.g., each protrusion 404A / 404B tapers along both sides to form a tip. Similarly, in FIG. 4B, flow perturbation features 404C and 404D are protrusions of the sidewall 406B of thermal plate 302B. In other examples, the flow perturbation features may have another suitable geometry that serves to promote turbulence in the flow of the heat transfer fluid.
[0083] Additionally, in FIGS. 4 A and 4B, each thermal plate 302A / 302B further includes a baffle disposed within its internal volume 400A / 400B, such that the baffle is configured to promote turbulence in the heat transfer fluid along the flow path 402A / 402B. In FIG. 4 A, the internal volume 400 A includes a baffle 408 A, while in FIG. 4B, the internal volume 400B includes a baffle 408B. It will be understood that the specific size, shape, and appearance of these baffles 408A and 408B are nonlimiting, and that in other examples, other suitable baffles may be used.
[0084] FIG. 4C provides a closer view of a portion of thermal plate 302 A, including flow perturbation feature 404A. FIG. 4C illustrates how the presence of the flow perturbation feature 404A causes the width of the internal volume 400A to vary along the flow path 402 A. As shown, the internal volume 400 A has a first width 410A between the side wall 406 and a central divider 412 that terminates in the baffle 408 shown in FIG. 4A. Further along the flow path 402A, the internal volume 400A has a second width 410B between the tip of flow perturbation feature 404 A and the centralDocket No. LRC25305PPCTdivider 412. As shown, the protrusion of the sidewall 406A to form the flow perturbation feature 404A has reduced the width of the internal volume 400A, which promotes turbulence in the flow of the heat transfer fluid. As the flow path 402A continues beyond the flow perturbation feature 404A, the width of the internal volume 400A increases to width 4 IOC, which is equal to width 410A.
[0085] Additionally, as shown in FIG. 4C, the thermal plate 302 A includes a plurality of heat dissipation protrusions 414 that extend into the internal volume 400A, thereby increasing the surface area of the thermal plate 302 A that contacts the heat transfer fluid. In other words, inclusion of the heat dissipation protrusions 414 may increase the temperature regulation efficacy of the thermal plate 302 A, by exposing a greater surface area to the heat transfer fluid. In this example, the heat dissipation protrusions 414 are implemented as fins, although this is non-limiting. In other examples, the heat dissipation protrusions may be implemented as pins, and / or as another suitable shape.
[0086] The present disclosure primarily focuses on scenarios where the internal volumes of the thermal plates are connected in series, such as is the case in FIGS. 3A-3C and FIGS. 4A-4C. It will be understood that, in other examples, the thermal plates may be arranged in parallel rather than in series - e.g., each thermal plate may receive heat transfer fluid from its own respective fluid inlet, independently from the other thermal plate. Furthermore, in FIGS. 3 A-3C and FIGS. 4A-4C, two thermal plates 302A and 302B are affixed together to collectively enclose a segment of a conduit 306. It will be understood that, in other examples, another suitable number of thermal plates may be used. For instance, in some scenarios, three thermal plates may be used, each having their own respective internal volumes, fluid inlets, and fluid outlets, thereby defining different flow paths through which heat transfer fluid may be circulated.
[0087] Furthermore, the examples of FIGS. 3A-C and FIGS. 4A-4C focus on a scenario where the heat transfer assembly 300 is mounted to a conduit 306 that extends in a straight line. However, it will be understood that this need not always be the case. Rather, in some examples, a heat transfer assembly as described herein may beneficially be mounted to a conduit that includes a bend, and can facilitate easier and more effective thermal regulation of bent conduits as compared to other heat transfer solutions. This is schematically illustrated with respect to FIG. 5, showing another example heat transfer assembly 500. Heat transfer assembly 500 includes one or more thermal plates, as discussed above, and includes a fluid inlet 502 and a fluid outlet 504 enablingDocket No. LRC25305PPCTcirculation of heat transfer fluid within the heat transfer assembly. For instance, as with the examples shown in FIGS. 3 A and 3B, heat transfer assembly 500 may include two thermal plates affixed together. As shown, heat transfer assembly 500 is mounted to a conduit 506. In this example, unlike FIG. 3A, the conduit 506 includes a bend - e.g., the heat transfer assembly 500 encloses a segment of the conduit 506 at which the longitudinal axis of the conduit 506 changes direction. As discussed above, the use of layered manufacturing techniques (e.g., such as additive manufacturing) can facilitate easier production of thermal plates having arbitrary shapes and complex internal geometries, which can enable production of thermal plates that accommodate bent conduits as is shown in FIG. 5.
[0088] As discussed above, in cases where two thermal plates are used, and the flow paths through each thermal plate are connected in series, then the interface between the two thermal plates may have any suitable geometry. FIGS. 6 and 7 schematically depict two example interfaces between the internal volumes of different thermal plates. Specifically, FIG. 6 schematically shows portions of an example heat transfer assembly 600 in cross section. Specifically, heat transfer assembly 600 includes a first thermal plate 602A and a second thermal plate 602B, each having respective internal volumes 604 A and 604B. These internal volumes 604 A and 604B are connected in series, such that a flow path 606 of heat transfer fluid extends through the first internal volume 604A, through an interface between the two thermal plates 602A and 602B, and continues into the second internal volume 604B.
[0089] In FIG. 6, an O-ring 608 is positioned at the interface between the two thermal plates 602 A and 602B. As discussed above, use of an O-ring 608 may improve the seal between the two thermal plates 602A and 602B, and mitigate or eliminate leakage of heat transfer fluid at the interface. However, the orientation of the O-ring 608 may vary depending on the implementation. In the example of FIG. 6, the O-ring 608 provides an axial seal. In other words, a compression force is applied to the O-ring 608 along a direction perpendicular to the plane of the O-ring 608. This is illustrated in FIG. 6, in which the compression force applied to the O-ring 608 is represented by force vectors 610A and 610B. As shown, these force vectors 610A and 610B are perpendicular to the plane of the O-ring 608 - e.g., perpendicular to the radius of the O-ring 608.
[0090] By contrast, FIG. 7 schematically depicts a scenario where the O-ring provides a radial seal, rather than an axial seal. Specifically, FIG. 7 shows anotherDocket No. LRC25305PPCTexample heat transfer assembly 700, including a first thermal plate 702A and a second thermal plate 702B. Each thermal plate 702A / 702B defines a different internal volume 704A and 704B, and these are connected in series, such that a flow path 706 of heat transfer fluid passes from one thermal plate 702A into the next thermal plate 702B. An O-ring 708 is positioned at the interface between the two thermal plates 702A and 702B. In this example, however, the first thermal plate 702A includes a tube stub 709 that extends toward the second thermal plate 702B. The O-ring 708 is positioned between the outside of the tube stub 709 and the sidewall of the second thermal plate 702B. In this manner, the compression force is applied in a direction parallel to the plane of the O-ring 708 rather than perpendicular, as is indicated by force vectors 710A and 710B.
[0091] FIGS. 6 and 7 each depict examples where the interface between the two thermal plates is internal to the heat transfer assembly. However, as discussed above, two thermal plates may in some cases be connected by an intermediary conduit that is external to the two thermal plates. One such example is schematically illustrated with respect to FIG. 8. Specifically, FIG. 8 schematically shows another example heat transfer assembly 800, including a first thermal plate 802A and a second thermal plate 802B that collectively enclose a segment of a conduit 804. As discussed above, each of these thermal plates 802A and 802B may define separate internal volumes through which heat transfer fluid can be circulated. To this end, thermal plate 802A includes a fluid inlet 806A and a fluid outlet 806B, while thermal plate 802B includes a fluid inlet 808 A and a fluid outlet 808B.
[0092] As compared to the examples described above, in the case of heat transfer assembly 800, each of the fluid inlets 806A / 808A and outlets 806B / 808B are external to the thermal plates 802A / 802B. Accordingly, in this case, the heat transfer assembly 800 includes an intermediary conduit 810 that is external to the two thermal plates 802A / 802B, and connects the fluid outlet 806B to the fluid inlet 808A. In this manner, heat transfer fluid may enter the heat transfer assembly 800 through fluid inlet 806A, then travel through the first internal volume of the first thermal plate 802A, the intermediary conduit 810, the second internal volume of the second thermal plate 802B, and exit the heat transfer assembly 800 via fluid outlet 808B. Thus, the two thermal plates 802A / 802B are still connected in series, but the interface between the two thermal plates 802A / 802B is external rather than internal.
[0093] It will be understood that the configurations and / or approaches described herein are exemplary in nature, and that these specific examples or examplesDocket No. LRC25305PPCTare not to be considered in a limiting sense, because numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. As such, various acts illustrated and / or described may be performed in the sequence illustrated and / or described, in other sequences, in parallel, or omitted. Likewise, the order of the above-described processes may be changed.
[0094] The subject matter of the present disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems and configurations, and other features, functions, acts, and / or properties disclosed herein, as well as any and all equivalents thereof.
Claims
Docket No. LRC25305PPCTCLAIMS:
1. A heat transfer assembly, comprising:a thermal plate defining an internal volume and configured to be mounted to a semiconductor processing tool, the thermal plate comprising a fluid inlet, wherein heat transfer fluid enters the internal volume through the fluid inlet, flows along a flow path within the internal volume, and exits the internal volume through a fluid outlet; and wherein the thermal plate comprises a layered structure formed by a layered manufacturing technique.
2. The heat transfer assembly of claim 1, wherein the thermal plate is a first thermal plate, the internal volume is a first internal volume, the fluid inlet is a first fluid inlet, the flow path is a first flow path, and the fluid outlet is a first fluid outlet, and wherein the heat transfer assembly further comprises a second thermal plate affixed to the first thermal plate, the second thermal plate defining a second internal volume and comprising a second fluid inlet, wherein the heat transfer fluid enters the second internal volume through the second fluid inlet, flows along a second flow path within the second internal volume, and exits the second internal volume through a second fluid outlet.
3. The heat transfer assembly of claim 2, wherein the heat transfer assembly is mounted to a conduit of the semiconductor processing tool, and wherein the first thermal plate and the second thermal plate collectively enclose a segment of the conduit.
4. The heat transfer assembly of claim 3, wherein the segment of the conduit comprises a bend at which a longitudinal axis of the conduit changes direction, and wherein the first thermal plate and the second thermal plate enclose the bend.
5. The heat transfer assembly of claim 2, wherein the first flow path and the second flow path are in series, wherein the heat transfer fluid exits the first internal volume through the first fluid outlet and enters the second internal volume through the second fluid inlet.Docket No. LRC25305PPCT6. The heat transfer assembly of claim 5, further comprising an O-ring disposed between the first fluid outlet and the second fluid inlet, at an interface between the first internal volume and the second internal volume.
7. The heat transfer assembly of claim 6, wherein the O-ring provides an axial seal, and wherein a compression force is applied to the O-ring along a direction perpendicular to a plane of the O-ring.
8. The heat transfer assembly of claim 6, wherein the O-ring provides a radial seal, and wherein a compression force is applied to the O-ring along a direction parallel to a plane of the O-ring.
9. The heat transfer assembly of claim 5, further comprising an intermediary conduit that is external to the first thermal plate and the second thermal plate, wherein the intermediary conduit connects the first fluid outlet to the second fluid inlet.
10. The heat transfer assembly of claim 1, wherein a width of the internal volume varies along the flow path at one or more flow perturbation features of the thermal plate, and wherein the one or more flow perturbation features promote turbulence in the heat transfer fluid along the flow path.
11. The heat transfer assembly of claim 10, wherein each flow perturbation feature comprises a tapered protrusion of a sidewall of the thermal plate into the internal volume, and wherein the width of the internal volume along the flow path decreases and then increases at each flow perturbation feature.
12. The heat transfer assembly of claim 1, further comprising a baffle disposed within the internal volume, and wherein the baffle is configured to promote turbulence in the heat transfer fluid along the flow path.
13. The heat transfer assembly of claim 1, wherein the thermal plate comprises a plurality of heat dissipation protrusions that extend into the internal volume, thereby increasing a surface area of the thermal plate that contacts the heat transfer fluid.Docket No. LRC25305PPCT14. The heat transfer assembly of claim 1, wherein the layered manufacturing technique comprises additive manufacturing.
15. The heat transfer assembly of claim 1, wherein the layered manufacturing technique comprises joining two or more metallic plate layers through diffusion bonding, brazing, or forge welding.
16. The heat transfer assembly of claim 1, wherein the thermal plate is at least partially constructed from stainless steel.
17. A heat transfer assembly, comprising:a first thermal plate defining a first internal volume, the first thermal plate comprising a first fluid inlet, wherein heat transfer fluid enters the first internal volume through the first fluid inlet, flows along a first flow path within the first internal volume, and exits the first internal volume through a first fluid outlet, wherein a width of the first internal volume varies along the first flow path at one or more flow perturbation features of the first thermal plate, and wherein the one or more flow perturbation features promote turbulence in the heat transfer fluid along the first flow path; and a second thermal plate affixed to the first thermal plate, the second thermal plate defining a second internal volume and comprising a second fluid inlet, wherein the heat transfer fluid enters the second internal volume through the second fluid inlet, flows along a second flow path within the second internal volume, and exits the second internal volume through a second fluid outlet;wherein the first flow path and the second flow path are in series, wherein the heat transfer fluid exits the first internal volume through the first fluid outlet and enters the second internal volume through the second fluid inlet;wherein the first thermal plate and the second thermal plate comprise layered structures formed by a layered manufacturing technique; andwherein the first thermal plate and the second thermal plate at least partially enclose a conduit of a semiconductor processing tool.
18. The heat transfer assembly of claim 17, wherein each of the one or more flow perturbation features is a tapered protrusion of a sidewall of the first thermal plate intoDocket No. LRC25305PPCTthe first internal volume, and wherein the width of the first internal volume along the first flow path decreases and then increases at each flow perturbation feature.
19. The heat transfer assembly of claim 17, further comprising a baffle disposed within the first internal volume, and wherein the baffle promotes turbulence in the heat transfer fluid along the first flow path.
20. A semiconductor processing tool, comprising:a processing chamber;a conduit for supplying processing chemicals into the processing chamber; and a heat transfer assembly, comprising:a first thermal plate defining a first internal volume, the first thermal plate comprising a first fluid inlet, wherein heat transfer fluid enters the first internal volume through the first fluid inlet, flows along a first flow path within the first internal volume, and exits the first internal volume through a first fluid outlet; anda second thermal plate affixed to the first thermal plate, the second thermal plate defining a second internal volume and comprising a second fluid inlet, wherein the heat transfer fluid enters the second internal volume through the second fluid inlet, flows along a second flow path within the second internal volume, and exits the second internal volume through a second fluid outlet;wherein the first thermal plate and the second thermal plate comprise layered structures formed by a layered manufacturing technique; andwherein the first thermal plate and the second thermal plate at least partially enclose the conduit of the semiconductor processing tool.