Terahertz-band surface plasmon polariton transmission line structure based on silicon CMOS process

Abstract

The present invention pertains to the field of integrated circuits and terahertz communication technology, and provides a terahertz-band surface plasmon polariton transmission line structure based on silicon CMOS process, comprising: a plasmonic transmission line formed by a top metal layer for propagating surface plasmon polariton waves; a distributed slotline structure disposed on multiple metal layers beneath the plasmonic transmission line, the distributed slotline structure comprising a plurality of floating metal strips that are not electrically connected to each other, wherein the arrangement direction of the floating metal strips is perpendicular to the propagation direction of the surface plasmon polariton waves; a mirror ground structure formed by a bottom metal layer, whose layout is a mirror image of the plasmonic transmission line, for shielding the electric field and serving as a ground plane; wherein by introducing the distributed slotline and mirror ground structures, the invention achieves stronger electric field confinement, lower transmission loss, and better crosstalk suppression without requiring additional process steps, and facilitates integration with radio frequency functional modules.