Controlling ΔT during silicon vapor infiltration keeps deposition inside porous battery particles, reducing reactor soiling and improving homogeneity.
Controlling the CVI temperature differential and preheating porous particles keeps silicon deposition in pores, reducing reactor flaking and soiling.
A tuned boronizing powder slows boron flux to form deeper single-phase Fe2B layers with lower fracture risk in steel tubes and pipes.
Boron, carbon, or phosphorous doping stabilizes amorphous silicon against crystallization during thermal annealing, ensuring material uniformity.
Replacing solid surfaces with a laminar gaseous condensation front stabilizes temperature, controlling particle morphology and reducing agglomeration.