Galvano-Magnetic Devices TRIZ Cases
- Magnetoresistive IC Integration Using Standard Vias and Dielectrics
Standard vias, shared interlayer dielectrics, and dummy features let magnetoresistive cells fit standard IC flows with fewer added steps.
- Magnetoresistive Stack Switching for Low-Current Stable MRAM Bits
Combining SOT and STT switching cuts write current in high-barrier MRAM bits while preserving data retention and endurance.
- Tunable Magnonic Crystal Device for On-Chip RF Filtering
A tunable magnonic crystal device filters spin wave spectral components using a magneto-electric cell to adjust magnetic properties via control voltage.
- MRAM Memory Element With Ta Cap Layer for Low Write Current
A magnetic memory element uses a tantalum cap layer to reduce the effective diamagnetic field acting on the memory layer.
- Ferromagnetic Memory Cell Using Semiconductor Fin Enclosure
A semiconductor fin enclosure confines ferromagnetic material to define memory cell features without photolithography.
- Hall Sensor Thermal Drift Control via Gate Electrode
A Hall sensor stabilizes magnetic sensitivity against temperature drift by using a gate electrode to modulate carrier concentration in the active area.