Single mask ion beam etching aligns the spin torque oscillator with the main pole, preventing accidental erasure of adjoining tracks during magnetic recording.
Segmented gap layers reduce effective throat height, enabling thicker trailing shields to improve magnetic shielding performance.
A template layer beneath a Heusler alloy free layer reduces critical current density in spin transfer torque devices.
Evaporation deposition fills a patterned dielectric trench to create void-free write poles, overcoming CVD-induced stress and non-uniformity.
An iridium layer reverses magnetization in a magnetic head stacked body, maintaining effective field application despite reduced write gaps.
Thin magnetic layers in the side gap adapt permeability by frequency, resolving the trade-off between bit sharpness and writability.