Polycrystalline Material Growth TRIZ Cases
- Beta-Ga2O3 Crystal Growth via Asymmetric Seed Positioning
Asymmetric seed positioning in Edge-Defined Film Fed Growth prevents twinning during shoulder widening, enabling wide beta-Ga2O3 single crystals.
- Low-Temperature Alpha-SiC Film Deposition via LPCVD
Chlorinated hydrocarbon and chlorosilicon gas reactions deposit alpha-silicon carbide films below 1400°C, enabling silicon wafer compatibility.
- SiC Epitaxial Layer Dislocation Removal via Graphite Capping
A graphite cap prevents silicon sublimation during high temperature annealing, eliminating basal plane dislocations while preserving surface morphology.
- InGaAlO Crystalline Compound for Stable Sputtering and High Mobility
Precise InGaAlO composition stabilizes sputtering targets to resolve contradictions between process durability and carrier mobility in oxide semiconductors.
- TMDC Layer Formation via Plasma-Assisted MBE
Plasma-assisted molecular beam epitaxy forms uniform TMDC layers at low temperatures, preventing substrate damage from high heat.
- Single Crystal Diameter Measurement via Fusion Ring Projection
A camera photographs the fusion ring at the melt-crystal boundary while a computer projects the image onto a reference plane to calculate the single crystal diameter.
- SiC Buffer Layer Gradient for Dislocation Suppression and FT-IR Measurement
A silicon carbide buffer layer uses a carrier concentration gradient to suppress dislocations in epitaxial growth.