Substrate/Intermediate Layers TRIZ Cases
- Heusler Multilayer MRAM for Low-Current Perpendicular Anisotropy
Volume PMA in half-metallic Heusler multilayers lowers MRAM switching current while preserving high spin polarization and thermal stability.
- Co-Cr Seeded MTJ Structure for Low-RA High-TMR Memory Cells
Co-Cr seed layers and Cr-alloyed Co-Hf buffers suppress diffusion in MTJs, lowering RA while raising TMR for low-power, stable MRAM reads.
- Magnetic Tunnel Barrier Oxide Stack for Zinc Segregation Control
Layered MgO, ZnO, and rock-salt oxides stabilize the tunnel barrier during heat treatment and raise breakdown voltage in magnetic storage.
- Fe-Co-B Free Layer Composition for Thermally Stable MTJ Recording
A single Fe-Co-B free layer with Mo or Re maintains MTJ magnetic properties after thermal treatment while avoiding complex multilayer fabrication.
- Magnetoresistive Element PMA Vortex Structure for Out-of-Plane Sensing
Perpendicular magnetic anisotropy and a vortex sense layer raise out-of-plane sensitivity without thicker layers, easing fabrication and boosting density.