28Si Superlattice Epitaxial Layers for Mobility and Diffusion Control
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Solution Overview
Problem
Existing semiconductor devices could benefit from advanced materials and processing techniques to enhance charge carrier mobility and reduce defects for improved performance.
Innovation Solution
A semiconductor device incorporating a superlattice structure with alternating silicon and non-semiconductor monolayers, such as Si/O, to reduce effective mass and enhance mobility, while also acting as a barrier to dopant and material diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a superlattice structure with alternating silicon and non-semiconductor monolayers is implemented, then charge carrier mobility is enhanced and effective mass is reduced, but device structure complexity increases
Solution Approach 1:
The silicon layer is segmented into multiple thin monolayers (e.g., 4-8 monolayers thick) separated by non-semiconductor barrier layers. This segmentation creates a superlattice structure that reduces effective mass and enhances charge carrier mobility while maintaining manageable structural complexity through repeated modular units.
Solution Approach 2:
The invention uses composite material structures combining silicon monolayers with non-semiconductor barrier layers (such as silicon oxide or silicon nitride). This composite approach enables the superlattice to achieve enhanced electrical properties while using materials that are compatible with existing semiconductor manufacturing processes.
2Reliability
If high-purity 28Si layers are produced through epitaxial growth, then device performance is improved, but manufacturing cost increases
Solution Approach 1:
The superlattice structure is grown epitaxially on a substrate before forming the active device regions. This preliminary action creates a high-purity 28Si layer with reduced defects and enhanced crystalline quality, which improves device performance while the epitaxial process integrates into existing manufacturing workflows, controlling costs.
Solution Approach 2:
The invention utilizes isotopic enrichment to increase the 28Si content in the silicon layers. By changing the isotopic composition parameter, the material achieves enhanced crystalline quality and reduced defects, improving device performance without requiring complete redesign of the manufacturing process.
3Manufacturing precision
If the superlattice acts as a barrier to dopant and material diffusion, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
Non-semiconductor barrier layers (such as silicon oxide or silicon nitride) are introduced as intermediary layers between silicon regions. These barrier layers effectively prevent dopant and material diffusion, improving manufacturing precision, while their thin monolayer structure minimizes the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The superlattice structure achieves higher charge carrier mobility and reduces defects, enabling cost-effective production of high-purity 28Si layers and improving device performance, particularly in quantum devices.
Implementation Method 1
The superlattice structure achieves higher charge carrier mobility and reduces defects, enabling cost-effective production of high-purity 28Si layers and improving device performance
Implementation Method 2
acting as a barrier to dopant and material diffusion
Implementation Method 3
enabling cost-effective production of high-purity 28Si layers
Data Source
AI summary
A semiconductor device may include a first single crystal silicon layer having a first percentage of silicon 28; a second single crystal silicon layer having a second percentage of silicon 28 higher than the first percentage of silicon 28; and a superlattice between the first and second single crystal silicon layers. The superlattice may include stacked groups of layers, with each group of layers including stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions.