2D Channel Semiconductor Structure With Protective Bonding Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in miniaturizing integrated circuits is the performance degradation and damage of channel layers due to the use of traditional materials and fabrication processes, which affect the efficiency and reliability of active and passive devices.
Innovation Solution
The use of a two-dimensional (2D) insulating layer as a bonding layer, which is formed over a carrier and separated from the channel layer during fabrication, prevents damage to the channel layer and enhances the performance of semiconductor devices by providing a good vertical electrical connection path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If traditional materials and fabrication processes are used for miniaturization, then device size is reduced, but channel layer performance degrades and damage occurs
Solution Approach 1:
A bonding layer is introduced as an intermediary between the substrate and the channel layer. This bonding layer serves as a mediator that prevents direct damage to the channel layer during fabrication processes while enabling miniaturization. The bonding layer absorbs mechanical stress and protects the channel layer from damage during bonding and subsequent processing steps.
Solution Approach 2:
The bonding layer is formed on the substrate before the channel layer is deposited. This preliminary action prepares the substrate surface with appropriate mechanical and electrical properties, ensuring that subsequent channel layer formation proceeds without damage. The bonding layer is pre-configured to provide the necessary support and protection during miniaturization processes.
2Device complexity
If channel layer is directly bonded to substrate, then fabrication process is simplified, but channel layer suffers damage and performance degradation
Solution Approach 1:
The bonding layer acts as an intermediary that actually simplifies the fabrication process by enabling reliable bonding without direct channel layer-substrate contact. This intermediary layer provides a buffer zone that allows for more robust processing conditions, reducing the need for complex protective measures during fabrication.
Solution Approach 2:
The structure is segmented into distinct functional layers: substrate, bonding layer, and channel layer. This segmentation allows each layer to be optimized independently for its specific function, with the bonding layer specifically designed to provide mechanical support and electrical connectivity while protecting the channel layer during fabrication.
3Productivity
If bonding process is performed without protective layer, then manufacturing steps are reduced, but channel layer damage occurs
Solution Approach 1:
The bonding layer is formed in advance before the channel layer deposition, preparing the substrate with optimal bonding properties. This preliminary preparation enables the bonding process to proceed under more relaxed conditions, allowing for higher manufacturing efficiency without compromising channel layer quality.
Solution Approach 2:
The bonding layer serves as a cushioning layer formed beforehand to protect the channel layer during subsequent bonding and fabrication processes. This prior cushioning allows for more aggressive bonding conditions that improve manufacturing efficiency while the bonding layer absorbs the mechanical stress that would otherwise damage the channel layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of semiconductor devices with improved performance and reduced risk of channel layer damage, enabling better miniaturization and efficiency in integrated circuits.
Implementation Method 1
the 2D insulating layer provides good insulation between the source/drain contacts and prevents leakage current in the vertical direction
Implementation Method 2
The 2D insulating layer is conductive in a vertical direction, so that the two bonded structures are electrically connected to each other through the 2D insulating layer
Implementation Method 3
the 2D insulating layer is adhered to a carrier through Van der Waals force
Data Source
AI summary
A semiconductor device includes a substrate, a channel layer, an insulating layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The channel layer over the substrate and includes two dimensional (2D) material. The insulating layer is on the channel layer. The source/drain contacts are over the channel layer. The gate dielectric layer is over the insulating layer and the channel layer. The gate electrode is over the gate dielectric layer and between the source/drain contacts.