2D Channel FETs for Nucleic Acid Sequencing

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Solution Overview

Problem

Current field effect transistors (FETs) used in nucleic acid sequencing and genetic diagnostics face limitations due to short channel effects, leading to decreased sensor sensitivity and accuracy, particularly when scaled down to smaller geometries, which hinders their application in high-speed and sensitive sequencing reactions.

Innovation Solution

The development of chemically-sensitive field effect transistors with improved designs and fabrication techniques, including the use of 1D or 2D reaction layers, such as graphene, to create smaller, more sensitive sensors that can detect changes in analyte concentration and binding events, facilitating DNA hybridization and sequencing reactions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If FET sensors are scaled down to smaller geometries to increase sensor density and reduce cost, then device complexity and manufacturing scalability improve, but short channel effects increase leading to decreased sensor sensitivity and measurement precision

Engineering Contradiction:
Improvesensor geometry sizeVSAvoidsensor sensitivity
Core Design Contradiction:
Area of stationary objectVSMeasurement precision

Solution Approach 1:

The patent changes the material parameter of the channel from conventional semiconductor materials to two-dimensional materials (graphene, MoS2, WS2, WSe2). This material substitution fundamentally alters the electrical and sensitivity characteristics of the FET, enabling high sensitivity measurements even in scaled-down geometries where conventional materials would suffer from short channel effects.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures combining two-dimensional materials with conventional FET components (source, drain, gate electrodes). This hybrid approach integrates the superior sensitivity and electrostatic control of 2D materials with the成熟的 fabrication processes of conventional semiconductors, achieving both high measurement precision and manufacturability at scaled dimensions.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If conventional FET designs are used in sequencing reactions, then device simplicity and ease of manufacture are maintained, but sensor sensitivity and measurement accuracy decrease due to short channel effects

Engineering Contradiction:
Improvedevice fabricationVSAvoidanalyte detection sensitivity
Core Design Contradiction:
Ease of manufactureVSMeasurement precision

Solution Approach 1:

The patent modifies the channel material parameter to two-dimensional materials while maintaining compatibility with conventional FET fabrication processes. This parameter change enables high sensitivity analyte detection without sacrificing ease of manufacture, as the 2D materials can be integrated using existing semiconductor manufacturing techniques.

Inventive Principle:
Principle #35Parameter changes

3Productivity

If FET sensors operate at high speed for rapid sequencing, then productivity increases, but measurement precision decreases due to reduced interaction time between analyte and sensor

Engineering Contradiction:
Improvesequencing speedVSAvoiddetection accuracy
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

The patent changes the channel material to two-dimensional materials with superior charge carrier mobility and electrostatic properties. These material parameters enable the sensor to achieve high measurement precision rapidly, allowing both high productivity in sequencing applications and maintained detection accuracy.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

These enhanced FET sensors increase measurement sensitivity and accuracy, enabling rapid data acquisition from small to large sensor arrays, and improve the detection of DNA hybridization and sequencing reactions, addressing the limitations of existing FET technologies.

Implementation Method 1

the channel includes a two-dimensional material layer comprising graphene, molybdenum disulfide (MoS2), tungsten disulfide (WS2), or tungsten diselenide (WSe2)

Methodology Applied
Scientific EffectElectrical Conductivity: Conduction (electrical)

Implementation Method 2

chemically-sensitive field effect transistors with improved designs and fabrication techniques... increase measurement sensitivity and accuracy

Methodology Applied
Scientific EffectField Effect: Electric Field

Data Source

PatentUS11732296B2Two-dimensional channel FET devices, systems, and methods of using the same for sequencing nucleic acids
Publication Date: 2023.08.22 CARDEA BIO INC
  • US11732296B2 patent drawing
  • US11732296B2 patent drawing
  • US11732296B2 patent drawing

AI summary

An apparatus includes a biosensor integrated circuit (IC) chip having multiple well structures configured to receive a liquid comprising one or more biological analytes. The well structures include a passivation layer with an opening over one or more field effect transistors (gFETs) which include a layer of 2D channel material selected from molybdenum disulfide (MoS2) and graphene; a drain electrode connected to a first end of the channel; a source electrode connected to a second end of the channel, wherein the individual gFETs are configured such that liquid received by the well structure is confined to form a liquid gate above a top surface of the channel. A system and method perform various functions of the apparatus.