2D Material Channel Contacts With Intercalation for Lower Resistance

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Solution Overview

Problem

As semiconductor devices become smaller, the electrical characteristics of silicon-based channels reach a limit, and 2-dimensional materials, while offering higher charge mobility, suffer from high contact resistance with other structures.

Innovation Solution

Incorporating a 2-dimensional material channel with intercalation material in contact patterns to reduce contact resistance between the channel and source/drain electrodes, utilizing a multi-layered structure with transition metal dichalcogenides and intercalation materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a 2-dimensional material channel is used, then charge mobility is improved, but contact resistance with source/drain electrodes worsens

Engineering Contradiction:

Improvecharge mobilityVSAvoidcontact resistance

Core Design Contradiction:

SpeedVSReliability

Solution Approach 1:

The patent introduces contact patterns as intermediary structures between the 2-dimensional material channel and source/drain electrodes. These contact patterns include the 2-dimensional material with intercalation material (such as lithium, sodium, or potassium) inserted between its layers, creating a transition region that bridges the electrical properties of the channel and the metal electrodes, thereby reducing contact resistance while preserving the high charge mobility of the 2-dimensional material channel

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the electrical parameters of the 2-dimensional material by inserting intercalation materials between its layers. This intercalation process modifies the carrier concentration and electrical conductivity of the contact pattern regions, creating a gradient that facilitates better electrical contact with source/drain electrodes while maintaining the high mobility characteristics of the pure 2-dimensional material channel

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The semiconductor device achieves increased electrical characteristics by leveraging the high charge mobility of 2-dimensional materials and reducing contact resistance through the use of intercalation materials in contact patterns.

Implementation Method 1

Each of the first and second contact patterns includes a 2-dimensional material having an intercalation material disposed therein

Methodology Applied

Scientific EffectIntercalation:

Implementation Method 2

the first and second contact patterns, which may include the 2-dimensional material having the intercalation material inserted therein so as to decrease the contact resistance between the channel and the first and second source/drain electrodes

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20260040631A1Semiconductor devices

Publication Date: 2026.02.05 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device includes a channel on a substrate. The channel includes a 2-dimensional material. A gate insulating layer is on a first portion of the channel. A gate electrode is on a portion of the gate insulating layer. First and second contact patterns are on second portions of the channel, respectively. Each of the first and second contact patterns includes a 2-dimensional material having an intercalation material disposed therein. First and second source/drain electrodes are on the first and second contact patterns, respectively. Each of the first and second source/drain electrodes includes a metal.