2D Layered Channel Transistor Structure With Sulfidation-Resistant Contacts

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Solution Overview

Problem

Current semiconductor devices, particularly silicon-based transistors, are reaching performance scalability limits as they scale down in size, and alternative materials like Ge and III-V semiconductors face challenges in ultra-thin body performance scalability and are costly.

Innovation Solution

The manufacturing process involves forming transistors with a planar-like or fin-like structure using 2D layered channel materials on bulk silicon or SOI substrates, with conductive elements having inner and outer portions to enhance adhesion and suppress sulfidation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If silicon-based transistors are scaled down in size to improve performance, then device density and speed are improved, but performance scalability reaches fundamental limits

Engineering Contradiction:

Improvetransistor performanceVSAvoidperformance scalability

Core Design Contradiction:

SpeedVSReliability

Solution Approach 1:

The patent changes the material parameter from traditional silicon to 2D layered materials (such as MoS2, WSe2, MoTe2), which fundamentally alters the electrical and physical properties to enable continued scaling beyond conventional silicon limits while maintaining performance

Inventive Principle:

Principle #35Parameter changes

2Reliability

If alternative semiconductor materials like Ge and III-V materials are used to overcome silicon limits, then performance scalability is improved, but manufacturing cost increases significantly

Engineering Contradiction:

Improveperformance scalabilityVSAvoidmanufacturing cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent employs 2D layered materials that can be transferred from heterostructure templates to the final device, enabling the use of low-cost silicon substrates while achieving the desired material properties, thus reducing manufacturing cost compared to expensive Ge and III-V materials

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

3Reliability

If Ge and III-V semiconductor materials are used for ultra-thin body structures, then alternative material benefits are achieved, but ultra-thin body performance scalability remains challenging

Engineering Contradiction:

Improvealternative material performanceVSAvoidultra-thin body performance scalability

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent utilizes 2D layered materials with atomic-layer thickness that naturally form ultra-thin bodies with precise thickness control, overcoming the manufacturing precision challenges associated with ultra-thin Ge and III-V structures through their inherent two-dimensional nature

Inventive Principle:

Principle #30Flexible shells and thin films

4Strength

If conductive elements are formed with inner and outer portions to enhance adhesion, then adhesion strength is improved, but device structure complexity increases

Engineering Contradiction:

ImproveadhesionVSAvoidconductive element structure

Core Design Contradiction:

StrengthVSDevice complexity

Solution Approach 1:

The patent employs composite conductive element structures with inner and outer portions made of different materials, where the inner portion provides adhesion to the substrate and the outer portion provides electrical conductivity, achieving enhanced adhesion through material composition rather than structural complexity

Inventive Principle:

Principle #40Composite materials

5Reliability

If conductive elements are designed with inner and outer portions to suppress sulfidation, then device reliability is improved, but manufacturing process complexity increases

Engineering Contradiction:

Improvesulfidation suppressionVSAvoidmanufacturing process

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent uses an inner portion of the conductive element as an intermediary barrier between the outer conductive portion and the sulfur-containing environment, preventing sulfidation through material selection rather than complex manufacturing processes

Inventive Principle:

Principle #24Intermediary (Mediator)

Data Source

PatentUS12224351B2Semiconductor device and method of manufacturing the same

Publication Date: 2025.02.11 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor device includes a substrate, a first poly-material pattern, a first conductive element, a first semiconductor layer, and a first gate structure. The first poly-material pattern is over and protrudes outward from the substrate, wherein the first poly-material pattern includes a first active portion and a first poly-material portion joined to the first active portion. The first conductive element is over the substrate, wherein the first conductive element includes the first poly-material portion and a first metallic conductive portion covering at least one of a top surface and a sidewall of the first poly-material portion. The first semiconductor layer is over the substrate and covers the first active portion of the first poly-material pattern and the first conductive element. The first gate structure is over the first semiconductor layer located within the first active portion.