2D Ferroelectric Gate Stack for Polarization-Controlled Semiconductors
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Solution Overview
Problem
Current semiconductor devices do not effectively leverage the ferroelectric properties of materials to enhance performance, particularly in the integration of two-dimensional materials for improved electrical polarization and device functionality.
Innovation Solution
A semiconductor device design incorporating a substrate with a gate structure that includes a hexagonal boron nitride gate insulating layer, a lower graphene gate conductive layer, a bilayer ferroelectric layer made of two-dimensional materials, and an upper graphene gate conductive layer, which are sequentially stacked to enhance electrical properties and device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor devices are used, then device structure is simple, but ferroelectric properties are not effectively leveraged to enhance performance
Solution Approach 1:
The gate structure employs a composite material system consisting of hexagonal boron nitride (h-BN) as the gate insulating layer and a ferroelectric layer made of two-dimensional materials. This composite structure enables effective leverage of ferroelectric properties while maintaining structural integrity and device performance.
2Reliability
If a single-layer two-dimensional material is used in the ferroelectric layer, then manufacturing is simpler, but electrical polarization is insufficient
Solution Approach 1:
The ferroelectric layer is constructed as a bilayer two-dimensional material structure, transitioning from a single-layer to a multi-layer configuration. This dimensional enhancement in the material stack enables improved electrical polarization while maintaining the two-dimensional nature of the constituent materials.
3Reliability
If traditional gate insulating materials are used, then manufacturing is well-established, but electrical properties and control efficiency are limited
Solution Approach 1:
The gate insulating layer is replaced with hexagonal boron nitride (h-BN), fundamentally changing the material parameter from conventional insulators to a two-dimensional material with superior electrical properties. This parameter change enables improved control efficiency and electrical performance in the semiconductor device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design improves the electrical properties and performance of semiconductor devices by utilizing the ferroelectric properties of two-dimensional materials, enabling reversible polarization and efficient electrical readout, thus addressing the limitations of existing technologies.
Implementation Method 1
Ferroelectrics are materials having the property of spontaneous polarization by aligning the internal electric dipole moments even when no electric field is applied from the outside. In addition, the polarization of ferroelectrics may be changed by applying an external electric field greater than or equal to a coercive field, such that the electrical polarization is reversible.
Implementation Method 2
The gate insulating layer includes hexagonal boron nitride (h-BN)
Data Source
AI summary
Provided are semiconductor devices. The semiconductor device includes a substrate, a gate structure disposed on the substrate and extending in a first direction, and an active pattern spaced apart from the substrate in a second direction, extending in a third direction, and penetrating the gate structure, wherein the active pattern includes a two-dimensional material, the gate structure comprises a gate insulating layer, a lower gate conductive layer, a ferroelectric layer, and an upper gate conductive layer, which are sequentially stacked on the active pattern, the gate insulating layer includes hexagonal boron nitride (h-BN), and the ferroelectric layer includes a bilayer of a two-dimensional material.