2D Semiconductor Lateral Contacts for Lower Contact Resistance
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to reduce contact resistance and improve the integration of two-dimensional (2D) semiconductor materials in transistor structures, particularly in the context of shrinking geometries and increasing functional density in integrated circuits.
Innovation Solution
The formation of two-dimensional metallic contacts with horizontal semiconductor-metallic junctions and lateral metallic contacts, utilizing transition metal dichalcogenides and other materials, which reduce contact resistance by minimizing van der Waals gaps and enhancing lateral contact geometries.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional vertical contact structures are used in 2D semiconductor devices, then the manufacturing process is simpler, but contact resistance is high due to van der Waals gaps
Solution Approach 1:
The patent transitions from conventional vertical contact structures to lateral contact structures that extend along the interface between the 2D semiconductor channel and the contact region. This dimensional change allows the contact to traverse the van der Waals gap laterally, establishing better electrical connection and reducing contact resistance in 2D semiconductor devices
2Productivity
If geometry size is reduced to increase functional density, then production efficiency increases and costs decrease, but contact resistance increases due to smaller contact areas
Solution Approach 1:
The lateral contact structure extends along the interface direction, effectively increasing the contact area without increasing the footprint area. This allows functional density to be maintained or increased while contact resistance is reduced through the extended lateral contact path that better traverses the van der Waals gap
3Reliability
If lateral contact geometries are used to reduce contact resistance, then electrical performance improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent introduces a contact structure that acts as an intermediary element extending along the interface between the 2D semiconductor channel and the contact region. This intermediary lateral contact path facilitates better electrical connection while providing a more robust structure that is less sensitive to alignment variations compared to precise vertical contact formation
Data Source
AI summary
A semiconductor device includes channel region, first and second two-dimensional metallic contacts, a gate structure, and first and second metal contacts. The channel region includes a two-dimensional semiconductor material. The first two-dimensional metallic contact is disposed at a side of the channel region and includes a two-dimensional metallic material. The second two-dimensional metallic contact is disposed at an opposite side of the channel region and includes the two-dimensional metallic material. The gate structure is disposed on the channel region in between the first and second two-dimensional metallic contacts. The first metal contact is disposed at an opposite side of the first two-dimensional metallic contact with respect to the channel region. The second metal contact is disposed at an opposite side of the second two-dimensional metallic contact with respect to the channel region. The first and second two-dimensional metallic contacts contact sideways the channel region to form lateral semiconductor-metallic junctions.