2D Material Edge Contact Work Function Control

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Solution Overview

Problem

The integration of two-dimensional (2D) materials into electronic devices faces challenges in achieving p-type or ambipolar characteristics due to limitations in existing contact configurations and materials, which affect the Fermi level pinning and device performance.

Innovation Solution

The electronic device design includes a 2D material layer with a gate electrode, insulating layer, and electrode layers with specific work functions, where the electrode layers directly contact the edges of the 2D material layer, allowing for p-type or ambipolar characteristics by controlling the Fermi level pinning effect through the selection of materials with varying work functions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing contact configurations and materials are used to integrate 2D materials into electronic devices, then device integration is achieved, but Fermi level pinning occurs which limits device performance and prevents p-type or ambipolar characteristics

Engineering Contradiction:

Improvedevice performanceVSAvoidFermi level pinning

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent changes the work function parameter of the contact electrode by selecting materials with specifically tailored work functions (ranging from 4.0 eV to 6.0 eV) to match or exceed the 2D material's work function, thereby preventing Fermi level pinning and enabling p-type or ambipolar characteristics

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures where a contact electrode layer with high work function material is combined with a 2D material layer, creating a heterostructure that achieves both good electrical contact and prevention of Fermi level pinning through the synergistic properties of the combined materials

Inventive Principle:

Principle #40Composite materials

2Adaptability or versatility

If electrode layers with high work function are used to contact 2D material edges, then p-type or ambipolar characteristics are achieved, but device structure complexity increases

Engineering Contradiction:

Improvep-type or ambipolar characteristicsVSAvoiddevice structure

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by making the contact electrode layer's work function specifically high only at the regions where it contacts the 2D material edges, while other parts of the device structure can use different materials optimized for their specific functions, thereby achieving p-type characteristics locally without requiring the entire device to be complex

Inventive Principle:

Principle #3Local quality

3Ease of manufacture

If conventional materials are used for contact electrodes, then manufacturing is simpler, but contact resistance increases and electrical characteristics deteriorate

Engineering Contradiction:

Improvemanufacturing simplicityVSAvoidelectrical characteristics

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the key parameter of the contact electrode from conventional materials with fixed work functions to materials with specifically selected high work functions (4.0-6.0 eV), which simultaneously improves electrical characteristics by preventing Fermi level pinning and maintains ease of manufacture through compatibility with existing thin-film deposition techniques

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables the formation of p-type or ambipolar electronic devices with improved performance by limiting or preventing Fermi level pinning, allowing for the realization of devices such as transistors and inverters with enhanced electrical characteristics.

Implementation Method 1

allowing for p-type or ambipolar characteristics by controlling the Fermi level pinning effect through the selection of materials with varying work functions

Methodology Applied

Scientific EffectFermi level pinning:

Data Source

PatentUS10516054B2Electronic device including two-dimensional material

Publication Date: 2019.12.24 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided are electronic devices having a two-dimensional (2D) material layer. The electronic device includes an electrode layer that directly contacts an edge of the 2D material layer. The electrode layer may include a conductive material having a high work function or may have a structure in which an electrode layer includes a conductive material having a high work function and an electrode layer includes a conductive material having a low work function.