2D Material Semiconductor Devices Intercalation Phase Transition

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Solution Overview

Problem

The integration of two-dimensional (2D) materials in semiconductor devices faces challenges related to interface issues between 2D materials or between 2D materials and other materials, leading to difficulties in achieving high carrier mobility and low contact resistance, which hampers the performance and operational characteristics of these devices.

Innovation Solution

The implementation of a semiconductor device structure that includes a 2D material layer with an intercalation material between its layers, along with conductive layers on opposite surfaces, which can change the crystalline structure of the 2D material from a 2H phase to a 1T or 1T' phase, enhancing carrier mobility and reducing contact resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a 2D material is applied to semiconductor devices, then high charge mobility and high Fermi velocity can be achieved, but interface issues between 2D materials or between 2D material and other materials occur

Engineering Contradiction:

Improvecharge mobilityVSAvoidinterface quality

Core Design Contradiction:

SpeedVSReliability

Solution Approach 1:

The patent introduces an intercalation material as an intermediary substance inserted between the 2D material layers and at the interface with other materials. This intercalation material acts as a mediator that improves the interface quality and reduces interface issues while preserving the high charge mobility characteristics of the 2D material. The intercalation material facilitates better interfacial contact and reduces defects at the boundaries between different materials.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Speed

If 2D materials are used in semiconductor devices, then high Fermi velocity can be achieved, but contact resistance remains high

Engineering Contradiction:

ImproveFermi velocityVSAvoidcontact resistance

Core Design Contradiction:

SpeedVSObject-affected harmful factors

Solution Approach 1:

The intercalation material serves as a mediator at the contact interface between the 2D material and metal electrodes or other contact structures. It reduces the Schottky barrier height and contact resistance by improving the electronic coupling between the 2D material and the contact material, while preserving the high Fermi velocity of the 2D material channel.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the physical and chemical parameters of the interface by introducing the intercalation material, which modifies the electronic structure, work function, and band alignment at the contact interface. This parameter change reduces the contact resistance without compromising the high Fermi velocity of the 2D material.

Inventive Principle:

Principle #35Parameter changes

3Power

If 2D materials are applied to semiconductor devices, then next-generation performance can be achieved, but it is difficult to secure good properties and performance

Engineering Contradiction:

Improvedevice performanceVSAvoiddevice properties

Core Design Contradiction:

PowerVSReliability

Solution Approach 1:

The intercalation material acts as a protective and functional intermediary that stabilizes the 2D material structure, reduces defects, and improves the overall device properties. It enhances the reliability of the device by mitigating interface-related degradation mechanisms while preserving the high-performance characteristics of the 2D material channel.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly increases carrier mobility and lowers contact resistance, resulting in improved performance and operational characteristics of the semiconductor devices, including enhanced current density and reduced Schottky barriers, making them suitable for high-density integrated circuits and optoelectronic applications.

Implementation Method 1

which can change the crystalline structure of the 2D material from a 2H phase to a 1T or 1T' phase

Methodology Applied

Scientific EffectPhase transition: Phase Change

Implementation Method 2

an intercalation material between the layers of the 2D material... significantly increases carrier mobility and lowers contact resistance

Methodology Applied

Scientific EffectIntercalation:

Data Source

PatentUS10529877B2Semiconductor devices including two-dimensional materials and methods of manufacturing the semiconductor devices

Publication Date: 2020.01.07 SAMSUNG ELECTRONICS CO LTD

AI summary

Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may include a semiconductor layer including layers of a 2D material, and an intercalation material between the layers of the 2D material. The semiconductor device may further include a first conductive layer on a first surface of the semiconductor layer and a second conductive layer on a second surface of the semiconductor layer that is opposite the first surface. A portion of the 2D material may have a first crystalline structure, and another portion of the 2D material may have a second crystalline structure that is different from the first crystalline structure. The 2D material may include a metal chalcogenide-based material.