2D Material Interconnect Structure for Lower Sheet and Contact Resistance

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Solution Overview

Problem

The reduction in dimensions of metallic conductive features in back-end-of-line interconnects leads to increased sheet resistance and contact resistance, posing a challenge in semiconductor manufacturing.

Innovation Solution

Employing 2D material layers, such as graphene or transition metal dichalcogenides, as conductive features, which are integrated with conductive contacts and dielectric materials to form interconnection structures, reducing sheet and contact resistance by leveraging their intrinsic properties that maintain low resistance even at reduced dimensions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the dimensions of metallic conductive features are reduced to increase density, then the spacing between components is reduced, but sheet resistance and contact resistance increase

Engineering Contradiction:

Improvedensity of elementsVSAvoidelectrical conductivity

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

The patent changes the material parameter from traditional metal to 2D materials (such as graphene or transition metal dichalcogenides), which fundamentally alters the electrical properties. This material substitution enables maintaining low sheet resistance and contact resistance even when the conductive features are scaled down to smaller dimensions, thus resolving the contradiction between increased density and maintained electrical conductivity

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite structures where 2D materials are integrated with conductive contacts and dielectric materials to form interconnection structures. This composite approach leverages the unique properties of 2D materials while combining them with other materials to achieve both high density and low resistance, effectively addressing the technical contradiction

Inventive Principle:

Principle #40Composite materials

2Adaptability or versatility

If the dimensions of metallic conductive features are reduced, then more functionality can be integrated, but contact resistance increases

Engineering Contradiction:

Improvefunctionality integrationVSAvoidcontact resistance

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

By changing the material parameter from metal to 2D materials with superior electrical properties at nanoscale, the patent enables better functionality integration without suffering from increased contact resistance. The 2D materials maintain low contact resistance even at reduced dimensions, allowing higher functionality integration

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS12525538B2Semiconductor device structure and methods of forming the same

Publication Date: 2026.01.13 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

An interconnection structure, along with methods of forming such, are described. The structure includes a first conductive feature having a two-dimensional material layer, a second conductive feature disposed over the first conductive feature, and a dielectric material disposed adjacent the first and second conductive features. The dielectric material extends from a level of a bottom of the first conductive feature to a level of a top of the second conductive feature.