2D Material Defect Removal Using Resonant Laser Treatment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional methods of forming 2D materials result in significant crystalline defects, leading to non-uniform local electron densities, current leakage, and shallow subthreshold slope, which negatively impact the performance and reliability of semiconductor devices.
Innovation Solution
A method involving laser treatment processes is employed to selectively energize and eliminate crystalline defects in 2D materials by exposing them to specific frequencies of electromagnetic radiation based on vibrational spectra analysis, optionally combined with thermal annealing and remote plasma treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form 2D materials, then the formation process is simple and straightforward, but significant crystalline defects are introduced leading to non-uniform electron densities, current leakage, and shallow subthreshold slope
Solution Approach 1:
The patent applies preliminary action by performing laser treatment and thermal annealing on the 2D material substrate before actual device fabrication. This pre-treatment eliminates crystalline defects (interstitial and vacancy) in advance, ensuring high-quality material with uniform electron density before subsequent device formation steps, thereby resolving the contradiction between achieving low defect density and maintaining process simplicity
Solution Approach 2:
The patent replaces conventional mechanical/chemical formation methods with laser-based electromagnetic radiation treatment. The laser treatment process uses photons to selectively remove crystalline defects without requiring complex chemical etching or mechanical processing, thus improving manufacturing precision while avoiding additional process complexity
2Reliability
If conventional formation methods are used, then the process is easier to implement, but the electrical properties are degraded due to crystalline defects
Solution Approach 1:
The patent changes the physical parameters of the 2D material through controlled laser irradiation and thermal annealing. By adjusting laser power, wavelength, scanning speed, and annealing temperature, the process optimizes the removal of crystalline defects while preserving the integrity of the 2D material structure, thereby improving reliability without significantly complicating the manufacturing process
Solution Approach 2:
The patent converts the harmful effect of crystalline defects into a beneficial process by using laser treatment to selectively remove these defects. The laser energy that would otherwise damage the material is instead used to precisely eliminate interstitial and vacancy defects, transforming a potential harm into a quality improvement mechanism that enhances device reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly reduces crystalline defect density, enhancing the electrical properties of 2D materials and improving the performance of semiconductor devices.
Implementation Method 1
treating the at least one 2D material with a plurality of laser beams having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material
Implementation Method 2
subjecting the 2D material to at least one laser treatment process to selectively energize, mobilize, and at least partially eliminate crystalline defects
Implementation Method 3
optionally combined with thermal annealing
Data Source
AI summary
A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.