2D Material Semiconductor Device with Layer-Count Grading
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Solution Overview
Problem
Current semiconductor devices face limitations in performance and scalability due to the decrease in channel region thickness, leading to increased mobility variations and threshold voltage dispersion, especially when using silicon-based channel regions, which results in a short channel effect and decreased performance as devices are scaled down.
Innovation Solution
The use of two-dimensional material structures, including a first and second two-dimensional material film with different layer counts grown on insulators with varying defect levels, where the first film forms a channel region with fewer layers and the second films on insulators with higher defect levels have more layers, reducing contact resistance and maintaining high performance even at nanoscale thicknesses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the channel region thickness is decreased to improve device integration, then device scalability is improved, but mobility variations and threshold voltage dispersion increase
Solution Approach 1:
The patent changes the material parameter from conventional silicon-based channel regions to two-dimensional material films (such as MoS2, WS2, MoSe2, WSe2), which maintain high carrier mobility and electrical performance even at nanoscale thicknesses. This material parameter change resolves the contradiction by enabling thin channel regions without the performance degradation typically observed in silicon-based devices.
Solution Approach 2:
The patent employs composite structures combining two-dimensional material films with insulator layers (first insulator with low defect density and second insulator with high defect density). This composite approach allows the channel region to maintain high performance while achieving the necessary thickness reduction for improved integration, thereby resolving the contradiction between scalability and reliability.
2Reliability
If two-dimensional material films with fewer layers are used in the channel region, then carrier mobility is maintained, but contact resistance increases
Solution Approach 1:
The patent applies local quality by using two-dimensional material films with different layer counts in different spatial locations. The channel region uses films with fewer layers (5-10 layers) to maintain high carrier mobility, while the contact region uses films with more layers (10-20 layers) to reduce contact resistance. This spatial variation in material properties resolves the contradiction between mobility and contact resistance.
Solution Approach 2:
The patent segments the two-dimensional material film into regions with different thicknesses: a first region with fewer layers for the channel and a second region with more layers for contacts. This segmentation allows each region to be optimized independently for its specific function, resolving the contradiction between carrier mobility requirements and contact resistance reduction.
3Object-affected harmful factors
If insulators with higher defect levels are used, then two-dimensional material films with more layers are grown reducing contact resistance, but device performance may deteriorate
Solution Approach 1:
The patent uses insulators with different defect densities in different locations: a first insulator with low defect density beneath the channel region to maintain high device performance, and a second insulator with high defect density beneath the contact regions to promote growth of thicker two-dimensional material films that reduce contact resistance. This local differentiation resolves the contradiction between contact resistance and device performance.
Data Source
AI summary
Provided are a two-dimensional material structure, a semiconductor device including the two-dimensional material structure, and a method of manufacturing the semiconductor device. The two-dimensional material structure may include a first insulator including a first dielectric material; a second insulator on the first insulator and including a second dielectric material; a first two-dimensional material film on an exposed surface of the first insulator; and a second two-dimensional material film provided on an exposed surface of the second insulator. The first and second two-dimensional material films may include a two-dimensional material having a two-dimensional layered structure, and the second two-dimensional material film may include more layers of the two-dimensional material than the first two-dimensional material film.