2D Material Semiconductor Device Thickness Control
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Solution Overview
Problem
There is a need for improved methods to form two-dimensional (2D) material layers in semiconductor devices to enhance performance, particularly in field-effect transistors (FETs), as existing methods do not effectively control the mobility of carriers and achieve uniform thickness in multi-layer 2D material structures.
Innovation Solution
A method involving epitaxial chemical vapor deposition (CVD) is used to form a multi-layer 2D material structure over a carrier substrate, with iterative thickness monitoring using scanning probe microscopy (SPM) to achieve a desired mean thickness and uniformity, allowing for the controlled formation of additional 2D material sub-layers to increase carrier mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to form 2D material layers, then the manufacturing process is simple, but the uniformity of thickness and carrier mobility cannot be effectively controlled
Solution Approach 1:
The patent implements iterative thickness monitoring using scanning probe microscopy (SPM) to measure the actual thickness of deposited 2D material layers. Based on the measured thickness, the deposition process is repeated with adjusted parameters until the desired target thickness is achieved, creating a closed-loop feedback system that ensures precise thickness control and uniformity
Solution Approach 2:
The patent performs preliminary characterization of the substrate surface and establishes deposition parameters before the actual deposition process. The target thickness is determined in advance based on the desired carrier mobility, allowing the deposition process to be optimized beforehand rather than requiring extensive post-processing adjustments
2Reliability
If the number of 2D material sub-layers is increased to improve carrier mobility, then carrier mobility increases, but the thickness uniformity becomes more difficult to control
Solution Approach 1:
The patent deposits a slight excess of 2D material beyond the theoretical minimum required for the target thickness, then uses SPM measurement and iterative removal or selective deposition to achieve the precise target thickness. This approach ensures that carrier mobility requirements are met while maintaining thickness uniformity through measurement and adjustment
Solution Approach 2:
The patent adjusts deposition parameters such as deposition rate, temperature, and pressure based on the number of sub-layers being formed and the target thickness. By dynamically changing these parameters during the deposition process, the system maintains thickness uniformity even when forming multiple sub-layers to achieve higher carrier mobility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of semiconductor devices with increased carrier mobility and improved uniformity, demonstrated by enhanced current-voltage characteristics and increased ON/OFF ratios, while being compatible with sub-10 nm node transistor fabrication.
Implementation Method 1
epitaxial chemical vapor deposition (CVD) is used to form a multi-layer 2D material structure
Implementation Method 2
iterative thickness monitoring using scanning probe microscopy (SPM)
Data Source
AI summary
A method for manufacturing a semiconductor device comprising two-dimensional (2D) materials may include: epitaxially forming a first two-dimensional (2D) material layer over a substrate; calculating a mean thickness of the first 2D material layer; comparing the mean thickness of the first 2D material layer with a reference parameter; determining that the mean thickness of the first 2D material layer is not substantially equal to the reference parameter; and after the determining, epitaxially forming a second 2D material layer over the first 2D material layer.