Two-Dimensional Material Transfer Using Supporting Film

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Solution Overview

Problem

Conventional methods for forming stacked heterostructures in semiconductor devices often result in residual contamination and material deterioration due to the use of chemical solvents and wet etching processes during the transfer and removal of two-dimensional materials.

Innovation Solution

A method is described that enables the clean peeling of two-dimensional material building blocks from target substrates without using etchants or solvents, allowing for the fabrication of semiconductor structures with pristine interlayer interfaces through vertical stack-by-stack heterostructure transfer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If chemical solvents and wet etching processes are used to transfer and remove two-dimensional materials, then the transfer process can be completed, but residual contamination and material deterioration occur

Engineering Contradiction:

Improvetransfer process feasibilityVSAvoidinterface cleanliness

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent introduces a supporting film as an intermediary layer between the two-dimensional material and the target substrate. This supporting film enables the transfer process without requiring chemical solvents or wet etching, as it provides mechanical support during peeling and transfer. The supporting film is later removed, leaving a clean interface without residual contamination, thus resolving the contradiction between transfer feasibility and interface cleanliness.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Ease of manufacture

If chemical solvents and wet etching processes are used to transfer and remove two-dimensional materials, then the transfer process can be completed, but material deterioration occurs

Engineering Contradiction:

Improvetransfer process feasibilityVSAvoidmaterial integrity

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The supporting film acts as a protective intermediary that enables mechanical peeling and transfer of two-dimensional materials without exposing them to harmful chemical solvents or wet etching processes. This preserves the intrinsic properties and integrity of the two-dimensional materials while still achieving successful transfer, thereby resolving the contradiction between transfer feasibility and material integrity.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Productivity

If conventional transfer methods are used, then two-dimensional materials can be moved to target substrates, but residual contamination remains at interfaces

Engineering Contradiction:

Improvetransfer efficiencyVSAvoidinterface purity

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The supporting film serves as a temporary intermediary that facilitates efficient transfer of two-dimensional materials to target substrates. After the transfer is complete, the supporting film is removed, leaving pristine interfaces without residual contamination. This approach maintains high transfer efficiency while achieving superior interface purity, resolving the contradiction between productivity and manufacturing precision.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach maintains the intrinsic properties of two-dimensional building blocks while achieving ultraclean interfaces, thereby enhancing the performance and reliability of semiconductor devices.

Implementation Method 1

delaminating a channel material from a first substrate using a supporting film that is attached to a first surface of the channel material

Methodology Applied

Scientific EffectMechanical peeling: Mechanical Force

Implementation Method 2

a supporting film that is attached to a first surface of the channel material

Methodology Applied

Scientific EffectAdhesion: Adhesive

Data Source

PatentUS20250203978A1Method of forming stacked unit layers and stacked two-dimensional material layers, and method of forming semiconductor structure

Publication Date: 2025.06.19 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor structure includes a semiconductor substrate, a plurality of stacked units, a conductive structure, a plurality of dielectrics, a first electrode strip, a second electrode strip, and a plurality of contact structures. The stacked units are stacked up over the semiconductor substrate, and comprises a first passivation layer, a second passivation layer and a channel layer sandwiched between the first passivation layer and the second passivation layer. The conductive structure is disposed on the semiconductor substrate and wrapping around the stacked units. The dielectrics are surrounding the stacked units and separating the stacked units from the conductive structure. The first electrode strip and the second electrode strip are located on two opposing sides of the conductive structure. The contact structures are connecting the channel layer of each of the stacked units to the first electrode strip and the second electrode strip.