2D Material Interconnect Structure for Stable Sub-10 nm Conductive Wires
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Solution Overview
Problem
Reducing the line width of conductive wires in integrated circuit devices leads to increased resistance and deterioration of electrical characteristics due to material limitations.
Innovation Solution
Employing a conductive wire structure comprising a topological semimetal and a two-dimensional material, with the topological semimetal serving as the main conductor and the two-dimensional material improving interface characteristics through van der Waals gaps, thereby maintaining low resistivity even at fine line widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the line width of conductive wires is reduced to increase integration density, then the integration density is improved, but the resistance increases rapidly due to material limitations
Solution Approach 1:
The patent employs a composite material structure consisting of a topological semimetal layer (e.g., MoP, WTe2) combined with a two-dimensional material layer (e.g., graphene, h-BN). This composite structure leverages the high carrier mobility of topological semimetals and the superior surface properties of two-dimensional materials to maintain low resistance even at line widths below 10 nm, thereby resolving the contradiction between increased integration density and maintained electrical performance
2Length of moving object
If the line width is reduced below a certain range to decrease device size, then the device size is reduced, but the resistance increases rapidly
Solution Approach 1:
The patent changes the material parameters by transitioning from conventional metals to topological semimetals with unique electronic band structures. The topological semimetal layer maintains high carrier mobility and low resistivity even at nanoscale dimensions (line widths < 10 nm), allowing device size reduction without the rapid resistance increase that occurs with traditional materials
3Ease of manufacture
If conventional materials are used in fine line widths, then manufacturing simplicity is maintained, but electrical characteristics deteriorate
Solution Approach 1:
The conductive wire is segmented into multiple functional layers: a topological semimetal layer providing high carrier mobility and a two-dimensional material layer providing stable surface properties and interface quality. This segmentation allows each layer to optimize its specific function, achieving superior electrical characteristics at fine line widths while maintaining compatibility with existing semiconductor manufacturing processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The conductive wire structure effectively prevents a rapid increase in resistivity and performance degradation at line widths less than 10 nm, ensuring stable electrical performance.
Implementation Method 1
the two-dimensional material improving interface characteristics through van der Waals gaps
Data Source
AI summary
A conductive wire including a topological semimetal and a two-dimensional material, an interconnect structure including one or more dielectric layers and a first conductive wire, including the topological semimetal and the two-dimensional material, and a semiconductor device including the conductive wire or the interconnect structure.