2D Metal Chalcogenide Diffusion Barrier for High-Integration Devices

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Solution Overview

Problem

High-integration electronic and semiconductor devices face challenges due to material diffusion between constituent layers, leading to degradation and reduced reliability, especially as temperature increases and electrical stress is applied.

Innovation Solution

The use of two-dimensional (2D) metal chalcogenide-based diffusion barrier layers with a thickness of up to 10 nm, incorporating materials like molybdenum disulfide (MoS2) and tungsten disulfide (WS2), which provide excellent diffusion barrier characteristics and are doped for enhanced conductivity, are integrated into multilayer structures to prevent material diffusion between semiconductor and conductor layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional diffusion barrier layers are used in high-integration devices, then material diffusion between layers is prevented, but the device integration density is limited due to the minimum line width constraints

Engineering Contradiction:

Improveprevention of material diffusionVSAvoidintegration density

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The patent employs ultrathin 2D material films (graphene, MoS2, WS2) as diffusion barrier layers. These atomically thin films provide effective diffusion prevention while being thin enough to enable high integration density and fine line width patterning, directly resolving the contradiction between reliability and productivity

Inventive Principle:

Principle #30Flexible shells and thin films

2Productivity

If the thickness of diffusion barrier layers is reduced to enable high integration, then the integration density increases, but the diffusion barrier effectiveness deteriorates

Engineering Contradiction:

Improveintegration densityVSAvoiddiffusion barrier effectiveness

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent changes the fundamental parameter of barrier layer thickness to the atomic scale (single-layer or few-layer 2D materials), where quantum confinement effects and surface dominance provide effective diffusion blocking even at extremely thin dimensions, thus maintaining reliability while enabling high integration

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses composite structures combining 2D materials with other materials (e.g., 2D material/TiN composites, 2D material/adhesion layer combinations) to enhance diffusion barrier effectiveness while maintaining ultrathin profiles, resolving the contradiction between thinness and effectiveness

Inventive Principle:

Principle #40Composite materials

3Ease of manufacture

If conventional materials are used for diffusion barriers, then the manufacturing process is established, but the minimum achievable thickness is limited

Engineering Contradiction:

Improvemanufacturing process maturityVSAvoidbarrier layer thickness

Core Design Contradiction:

Ease of manufactureVSLength of stationary object

Solution Approach 1:

The patent replaces conventional physical vapor deposition or chemical vapor deposition processes with chemical synthesis methods (CVD, ALD) that can produce atomically thin 2D materials with controlled thickness down to single-layer levels, achieving unprecedented thickness reduction while maintaining manufacturability

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

These 2D diffusion barrier layers effectively limit material diffusion, maintaining device reliability and durability while allowing for high-integration densities without significant resistance increase, even at fine line widths, thus enhancing the stability and performance of electronic devices.

Implementation Method 1

a diffusion barrier layer disposed between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material... the diffusion barrier layer may limit or prevent a material from diffusing between the first material layer and the second material layer

Methodology Applied

Scientific EffectDiffusion barrier: Diffusion Barrier

Data Source

PatentEP3125291B1Multilayer structure including diffusion barrier layer and device including the multilayer structure

Publication Date: 2021.12.15 SAMSUNG ELECTRONICS CO LTD

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AI summary

A multilayer structure includes a first material layer (L10), a second material layer (L20), and a diffusion barrier layer (B10). The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.