2D Nanosheet Transistor Channels for High Drive Current Scaling

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Solution Overview

Problem

Achieving high drive current in semiconductor transistors with reduced minimum feature size is challenging due to the limitations of conventional semiconductor materials used in nanosheet channels.

Innovation Solution

Utilizing two-dimensional (2D) material nanosheets, such as graphene or transition metal dichalcogenides, in the channel region of transistors, which are formed by alternating sacrificial channel layers and channel stacks, allowing for ultra-thin channels with higher mobility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If conventional semiconductor materials are used in nanosheet channels, then manufacturing process is well-established, but drive current becomes difficult to achieve as minimum feature size reduces

Engineering Contradiction:

Improvedrive currentVSAvoidminimum feature size

Core Design Contradiction:

PowerVSLength of moving object

Solution Approach 1:

The patent changes the material parameter from conventional semiconductor materials to two-dimensional materials (such as transition metal dichalcogenides), which fundamentally alters the electrical properties and enables high drive current at reduced feature sizes through superior carrier mobility and quantum confinement effects

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures including alternating layers of two-dimensional material channels with sacrificial layers, and combines multiple functional materials (semiconductor layers, dielectric layers, metal contacts) to create a integrated nanosheet channel device that achieves high performance at small dimensions

Inventive Principle:

Principle #40Composite materials

2Productivity

If minimum feature size is reduced to increase integration density, then more components can be integrated into given chip area, but achieving high drive current becomes difficult

Engineering Contradiction:

Improveintegration densityVSAvoiddrive current

Core Design Contradiction:

ProductivityVSPower

Solution Approach 1:

The patent changes the material parameters to two-dimensional materials with superior electrical characteristics, enabling the device to maintain high drive current performance even as the feature size is reduced to increase integration density

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent transitions from bulk three-dimensional semiconductor materials to two-dimensional material layers, exploiting the dimensional reduction to achieve quantum confinement effects and enhanced carrier mobility that enable high drive current at reduced feature sizes

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS12563830B2Semiconductor devices including two-dimensional material and methods of fabrication thereof

Publication Date: 2026.02.24 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

According to embodiments of the present disclosure, two-dimensional (2D) materials may be used as nanosheet channels for multi-channel transistors. Nanosheet channels made two-dimensional (2D) materials can achieve the same drive current at smaller dimensions and/or fewer number of channels, therefore enable scaling down and/or boost derive current. Embodiments of the present disclosure also provide a solution of P-type and N-type balancing in a device without increasing footprint of the device.