2D Material Oxide Interface Formation Without Masking and Etching
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Solution Overview
Problem
As semiconductor devices are fabricated with increasingly smaller feature sizes, the surfaces formed by masking and etching processes become non-uniform, leading to challenges in achieving uniform oxide regions and efficient integration of electronic components.
Innovation Solution
A method of forming an oxide region by oxidizing a 2D material layer, where no additional masking and etching steps are required, and the oxide region can have a uniform surface. This is achieved by using a metal layer to catalyze the oxidation reaction, allowing for a controllable layout of the oxide region based on the position or pattern of the metal layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If masking and etching processes are used to form oxide regions, then the oxide regions can be formed with defined patterns, but the surfaces become non-uniform and additional process steps are required
Solution Approach 1:
The patent extracts and removes the masking and etching steps from the oxide region formation process. Instead of using these complex patterning techniques, the invention directly forms oxide regions through selective oxidation of the semiconductor layer, thereby eliminating the source of surface non-uniformity and reducing process complexity
Solution Approach 2:
The semiconductor layer itself serves as the material that is oxidized to form the oxide regions. The oxidation process is self-directed through controlled exposure to oxidizing conditions, eliminating the need for external masking layers and etching processes to define the oxide region patterns
2Productivity
If feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but the surfaces formed by masking and etching become increasingly non-uniform
Solution Approach 1:
The semiconductor layer is directly oxidized to form oxide regions without requiring masking and etching processes. This self-directed oxidation approach maintains surface uniformity even as feature sizes are reduced, enabling continued increase in integration density without the compounding surface non-uniformity problems that plague traditional approaches
Solution Approach 2:
By removing the masking and etching steps from the process, the invention eliminates the mechanisms that cause surface non-uniformity to worsen with scaling. This allows feature sizes to be reduced for higher integration density while maintaining oxide region surface uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of uniform oxide regions without additional masking and etching steps, improving the integration density and efficiency of semiconductor devices. The controllable layout of the oxide region enhances the precision and effectiveness of the semiconductor device fabrication process.
Implementation Method 1
This is achieved by using a metal layer to catalyze the oxidation reaction
Implementation Method 2
An oxidation treatment is performed to the 2D material layer to form an oxide region
Data Source
AI summary
A method of forming a semiconductor device includes the following steps. A 2D material layer is formed over a bottom metal layer. A top metal layer is formed over the 2D material layer. An oxidation treatment is performed to the 2D material layer to form an oxide region interfacing both the 2D material layer and the top metal layer.