2D Passivation Structure for Light Emitting Element Surface Defects
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Solution Overview
Problem
Existing light emitting elements face challenges in extending their lifespan and efficiency due to surface defects in semiconductor cores, which are not effectively addressed by current technologies.
Innovation Solution
A light emitting element is designed with a passivation layer made of two-dimensional materials such as CaF2, Ti0.9O2, Mica, SiO2, WS2, MoS2, Ni(OH)2, Cu(OH)2, Mg(OH)2, GaS, Talc, and hexagonal boron nitride, surrounding the semiconductor core, along with an insulation layer, to control surface defects and improve performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional passivation layers are used on semiconductor cores, then manufacturing is simpler, but surface defects are not effectively controlled, reducing element lifespan and efficiency
Solution Approach 1:
The patent employs a composite passivation layer structure consisting of a first passivation layer (e.g., Al2O3, SiO2, Si3N4) and a second passivation layer (e.g., hBN, MoS2, WS2, GaS) with different material properties. The first layer provides strong surface passivation, while the second layer with high bandgap (≥3.5 eV) and atomically flat surface prevents defect formation and offers additional protection, together achieving superior reliability without excessive complexity
Solution Approach 2:
The patent introduces an intermediate insulation layer between the semiconductor core and the passivation layers, or between the passivation layers themselves. This intermediary layer acts as a buffer that prevents direct contact between potentially defective surfaces, isolates electrical fields, and reduces stress concentration, thereby preventing short circuits and enhancing element lifespan
2Reliability
If the passivation layer completely covers the semiconductor core, then surface defects are better controlled, but manufacturing precision requirements increase
Solution Approach 1:
The patent divides the passivation structure into multiple segmented layers rather than using a single continuous layer. The first passivation layer covers specific regions for electrical isolation, while the second passivation layer with high bandgap material covers regions requiring defect prevention. This segmentation allows each layer to be optimized for its specific function, improving surface defect control while maintaining reasonable manufacturing precision requirements
Solution Approach 2:
The patent applies different passivation materials and thicknesses to different regions of the semiconductor core based on local requirements. Areas with high defect density receive enhanced passivation with the second layer, while other areas use the first layer alone. This localized approach optimizes surface defect control where needed without unnecessarily increasing manufacturing complexity across the entire structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of two-dimensional materials in the passivation layer effectively minimizes surface defects, enhancing the lifespan and efficiency of the light emitting element by reducing defect concentrations and preventing short circuits, thereby improving the overall performance of the light emitting element.
Implementation Method 1
a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; wherein the passivation layer includes a two-dimensional (2D) material
Implementation Method 2
The use of two-dimensional materials in the passivation layer effectively minimizes surface defects, enhancing the lifespan and efficiency of the light emitting element by reducing defect concentrations
Implementation Method 3
an insulation layer surrounding an outer surface of the passivation layer
Data Source
AI summary
A light emitting element and a display device including the same are provided. The light emitting element includes: a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; and an insulation layer surrounding an outer surface of the passivation layer, wherein the passivation layer includes a two-dimensional (2D) material.


