2D Semiconductor Contact Structure With Thicker Doped TMD Layers
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Solution Overview
Problem
As semiconductor devices miniaturize, they face performance degradation due to increased integration, and existing materials struggle to maintain stability and performance at nano-scale thicknesses, necessitating the exploration of alternative two-dimensional materials.
Innovation Solution
A semiconductor device is developed using a first two-dimensional material layer and multiple second two-dimensional material layers with doped semiconductor materials, where the second layers have a greater thickness than the first, and include transition metal dichalcogenides (TMDs) to reduce contact resistance and enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are miniaturized to improve integration, then device density increases, but performance degrades due to increased resistance and Schottky barrier
Solution Approach 1:
The patent changes the physical parameters of the contact region by increasing its thickness and introducing doping, transforming it from a thin undoped semiconductor layer to a thicker doped region. This parameter change reduces contact resistance and Schottky barrier, resolving the performance degradation issue while maintaining miniaturization benefits
Solution Approach 2:
The patent applies different properties to different regions: the contact region is made thicker and doped, while other regions maintain their original thin undoped structure. This local quality differentiation allows the contact region to have low resistance while the overall device maintains high integration density
2Length of moving object
If two-dimensional material thickness is reduced for miniaturization, then device size decreases, but contact resistance increases
Solution Approach 1:
The patent creates a local quality difference by making the contact region thicker than the channel region. This localized thickness increase in the contact area reduces contact resistance without increasing the overall device thickness, resolving the contradiction between miniaturization and contact resistance
Solution Approach 2:
The patent addresses the two-dimensional material limitation by introducing a vertical dimension variation - creating thickness gradients within the two-dimensional material structure. The contact region has increased vertical thickness while the channel maintains thin thickness, solving the contact resistance problem
3Object-affected harmful factors
If doped two-dimensional material layers with greater thickness are used, then contact resistance decreases, but device complexity increases
Solution Approach 1:
The patent segments the two-dimensional material into functionally distinct regions: thin undoped regions for the channel and thicker doped regions for contacts. This segmentation allows each region to be optimized independently, reducing contact resistance while maintaining overall device simplicity through clear functional division
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of thicker doped second two-dimensional material layers with transition metal dichalcogenides reduces contact resistance and improves semiconductor device performance by lowering the Schottky barrier and bandgap, addressing the challenges of miniaturization and performance degradation.
Implementation Method 1
each of the plurality of second two-dimensional material layers including a doped two-dimensional semiconductor material
Data Source
AI summary
A semiconductor device including a two-dimensional material and a method of manufacturing the same are provided. The semiconductor device may include a first two-dimensional material layer including a first two-dimensional semiconductor material; a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each having a thickness greater than that of the first two-dimensional material layer, and including a doped two-dimensional semiconductor material; and a plurality of electrodes on the plurality of second two-dimensional material layers.