2D Semiconductor Contacts Using MXene to Lower Contact Resistance
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Solution Overview
Problem
Semiconductor devices using silicon channels face limitations in electrical characteristics as device size decreases, and two-dimensional (2D) materials with higher charge mobility suffer from high contact resistance with other structures.
Innovation Solution
Incorporating a channel made of a 2D material with carbide, nitride, or carbonitride of a transition metal as contact patterns and metal source/drain electrodes, specifically using Mxene, a metallic 2D material, to reduce contact resistance and enhance electric characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a channel including silicon is used in a semiconductor device, then the device structure is simple and manufacturing is easy, but the electrical characteristics reach a limit as device size decreases
Solution Approach 1:
The patent changes the material parameter of the channel from silicon to two-dimensional material, which fundamentally alters the electrical characteristics and enables continued performance improvement as device size decreases
Solution Approach 2:
The patent uses a composite structure combining two-dimensional material channel with metal source/drain electrodes and carbide contact patterns, creating a multi-material system that optimizes both electrical performance and manufacturability
2Reliability
If a channel including two-dimensional material is used to achieve higher charge mobility, then electrical characteristics improve, but contact resistance with other structures increases
Solution Approach 1:
The patent introduces carbide contact patterns as an intermediary layer between the two-dimensional material channel and metal source/drain electrodes. This intermediate layer serves as a mediator that reduces contact resistance while maintaining the high charge mobility benefits of the 2D material channel
Solution Approach 2:
The patent creates a composite contact structure using carbide (a compound material) combined with metal source/drain electrodes, forming a multi-material system that optimizes both electrical contact properties and interface compatibility with the two-dimensional material channel
Data Source
AI summary
A semiconductor device includes a channel on a substrate, the channel including a two-dimensional (2D) material, a gate insulating layer on a portion of the channel, a gate electrode on the gate insulating layer, first and second contact patterns on respective portions of the channel, the first and second contact patterns including a carbide of a transition metal, and first and second source/drain electrodes on the first and second contact patterns, respectively, and the first and second source/drain electrodes including a metal.