Wet Etching of 2D Semiconductor Layers With NaOCl Residue Cleanup
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Solution Overview
Problem
The existing dry etching processes for forming active layers in semiconductor elements are time-consuming and require large equipment, leading to low yield and high costs.
Innovation Solution
A method involving wet etching using sodium hypochlorite (NaOCl) to form active patterns on substrates, followed by residue removal with purified water and an inert gas, which can be performed with smaller equipment and in less time, utilizing molybdenum, tungsten, zirconium, hafnium, platinum, and rhenium disulfide or diselenide compounds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etching process is used to form active layer, then etching precision is maintained, but manufacturing time increases and equipment complexity increases
Solution Approach 1:
The patent changes the etching method from dry etching to wet etching, and specifically uses sodium hypochlorite solution as the etchant. This parameter change enables faster etching speed while maintaining adequate precision for the active layer formation in flexible display devices.
Solution Approach 2:
The patent employs a simple wet etching process using disposable sodium hypochlorite solution instead of complex dry etching equipment. The etchant is applied, used once, and then discarded with the residue removed by rinsing, eliminating the need for expensive and time-consuming dry etching machinery.
2Manufacturing precision
If dry etching process is used to form active layer, then etching precision is maintained, but device complexity increases
Solution Approach 1:
The patent replaces the complex mechanical and chemical system of dry etching equipment with a simple wet chemical etching process. Sodium hypochlorite solution is applied to the active layer, performing the etching function without requiring large vacuum chambers, plasma generators, or sophisticated control systems.
Solution Approach 2:
The patent employs a simple wet etching process using disposable sodium hypochlorite solution instead of complex dry etching equipment. The etchant is applied, used once, and then discarded with the residue removed by rinsing, eliminating the need for expensive and time-consuming dry etching machinery.
3Loss of time
If wet etching with sodium hypochlorite is used, then manufacturing time is reduced and equipment complexity is reduced, but residue removal is required
Solution Approach 1:
The patent introduces purified water as an intermediary substance to remove the harmful etching residue. The water rinses away the byproducts of sodium hypochlorite etching, and inert gas is used to dry the surface, completing the cleaning process without leaving additional residue.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the etching process, reduces time and costs, and produces active patterns with higher mobility and stability, suitable for semiconductor elements in display devices.
Implementation Method 1
forming an active pattern by wet etching the active layer by applying sodium hypochlorite (NaOCl) to the active layer
Implementation Method 2
removing a residue generated by the wet etching using purified water and an inert gas
Implementation Method 3
removing a residue generated by the wet etching using purified water and an inert gas
Data Source
AI summary
A method may be used for manufacturing a semiconductor element. The method may include the following steps: preparing a substrate; forming a semiconductor layer on the substrate, wherein the semiconductor layer includes crystallized two-dimensional layers; forming a source electrode and a drain electrode on the semiconductor layer; forming an semiconductor member by wet etching the semiconductor layer using sodium hypochlorite as an etchant, wherein the wet etching results in a residue; and removing the residue using purified water and an inert gas.