2D TMD Electric Field Sensor for High-Sensitivity Detection
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Solution Overview
Problem
Semiconductor sensor devices for measuring electric field strength face challenges due to low Fermi level state density, which limits their measurement sensitivity, despite high carrier mobility in materials like graphene.
Innovation Solution
A sensor device with a channel layer made of two-dimensional transition metal dichalcogenides, having high Fermi level state density, is used to measure electric field strength, incorporating a first and second dielectric layer and electrodes, with optional gate electrode, to enhance sensitivity through carrier movement and current measurement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If semiconductor sensor devices with graphene channel layer are used, then device size and weight are reduced, but measurement sensitivity is limited due to low Fermi level state density
Solution Approach 1:
The patent changes the material parameter of the channel layer from conventional semiconductors or graphene to two-dimensional transition metal dichalcogenide materials, which possess inherently higher Fermi level state density. This material substitution directly addresses the limitation of low Fermi level state density while maintaining the advantages of small device size and light weight, thereby improving measurement sensitivity.
2Measurement precision
If mechanical sensor devices are used, then measurement sensitivity can be achieved, but device dimensions and weight become large
Solution Approach 1:
The patent replaces mechanical sensor devices with a semiconductor-based sensor device utilizing two-dimensional transition metal dichalcogenide materials. This substitution eliminates the need for bulky mechanical components while achieving high measurement sensitivity through the unique electronic properties of the two-dimensional material, specifically its high Fermi level state density.
Solution Approach 2:
The patent employs a composite structure combining two-dimensional transition metal dichalcogenide channel layer with appropriate dielectric layers and electrode structures. This composite material approach enables the device to achieve both miniaturization and high measurement sensitivity, overcoming the weight and size limitations of mechanical sensors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sensor device achieves high measurement sensitivity for electric fields by leveraging the high Fermi level state density, allowing precise detection of small electric fields with reduced size, weight, and power consumption compared to mechanical sensors.
Implementation Method 1
The electric field strength of an external electric field applied to the semiconductor sensor device is measured as the size of the current flowing between the source electrode and drain electrode
Data Source
AI summary
Provided is a sensor device with high sensitivity for an external electric field. The sensor device has a first dielectric layer, a channel layer disposed on the first dielectric layer and including a channel region, and also including a film of one or more atomic layers formed by a two-dimensional transition metal dichalcogenide, and first and second electrodes disposed on either side of the channel region, in electrical contact with the channel layer, wherein the channel layer includes first and second side, the first side being disposed on the first dielectric layer, and the second side being exposed to the outside or a second electric layer being disposed on the second side, and the Fermi level of the channel layer being positioned in the conduction or valence bands of the channel layer, and located above the trap band at the interface of the first dielectric layer with the channel layer.