2D TMD Channel Semiconductor Structure With Seed-Layer Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices using two-dimensional semiconductor materials as channels face challenges in compatibility with silicon-based structures and processes due to material characteristics and difficulties in forming very thin layers, which affect performance and integration.
Innovation Solution
The semiconductor device incorporates a substrate with distinct regions, active patterns, and wall structures, featuring seed layers with transition metal elements that facilitate the growth of transition metal dichalcogenide 2D channel layers, enhancing compatibility with existing silicon-based processes and improving performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If two-dimensional semiconductor material is used as channel, then mobility and short channel effect are improved, but compatibility with silicon-based structures and processes deteriorates
Solution Approach 1:
A seed layer comprising a transition metal element is introduced as an intermediary between the silicon-based substrate and the two-dimensional semiconductor material. This seed layer facilitates the formation of transition metal dichalcogenide 2D channel layers through chemical vapor deposition, enabling compatibility with existing silicon-based manufacturing processes while achieving the performance benefits of 2D materials
Solution Approach 2:
The invention changes the material composition and structural parameters by incorporating transition metal seed layers and forming transition metal dichalcogenide channels. This parameter change enables the system to maintain compatibility with silicon-based processes while achieving improved mobility and short channel effect characteristics
2Reliability
If very thin 2D channel layers are formed, then device performance is improved, but manufacturing difficulty increases
Solution Approach 1:
A seed layer is formed in advance on the substrate before depositing the two-dimensional semiconductor material. This preliminary action provides a nucleation site that facilitates the controlled formation of very thin 2D channel layers through chemical vapor deposition, making the manufacturing process more manageable
Solution Approach 2:
The seed layer acts as an intermediary that enables the controlled deposition of ultrathin 2D materials. By providing a transition metal element interface, it allows for precise control of layer thickness and crystalline structure during chemical vapor deposition, reducing manufacturing difficulty
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of high-performance semiconductor devices with single crystal 2D channel layers, improving compatibility and performance by using transition metal dichalcogenides as channel materials within a silicon-based framework.
Implementation Method 1
seed layers with transition metal elements that facilitate the growth of transition metal dichalcogenide 2D channel layers
Data Source
AI summary
A semiconductor device including a substrate including a first region and a second region, a first active pattern extending in a first direction on the first region, a second active pattern extending in the first direction on the second region, a wall structure extending in the first direction between the first region and the second region and separating the first active pattern and the second active pattern from each other, a first gate structure intersecting the first active pattern on the first region, a first two-dimensional (2D) channel layer including a first transition metal dichalcogenide between the first active pattern and the first gate structure, a second gate structure intersecting the second active pattern on the second region, and a second 2D channel layer including a second transition metal dichalcogenide between the second active pattern and the second gate structure may be provided.