2DCG Ohmic Electrode Protrusion Layout for Lower Contact Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing semiconductor devices with ohmic source/drain electrodes have a small effective contact area due to recess etching, leading to high contact resistance, current crowding, and reduced thermal performance, which can result in device failure and nonuniformity in manufacturing yields.
Innovation Solution
The implementation of a 2DCG semiconductor device design featuring ohmic source/drain electrodes with protrusions separated by gaps, which increases the effective contact area, reduces current crowding, and enhances thermal performance by distributing heat generation across a larger area, while maintaining low contact resistance and improving etching uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If recess etching is performed to form ohmic source/drain electrodes, then the electrode structure is formed, but the effective contact area becomes small leading to high contact resistance
Solution Approach 1:
The bottom surface of the ohmic source/drain electrode is segmented into multiple protrusions rather than being a flat continuous surface. This segmentation increases the effective contact area with the semiconductor film, thereby reducing contact resistance and improving reliability while maintaining the electrode structure formation capability.
2Manufacturing precision
If recess etching is performed to form ohmic source/drain electrodes, then the electrode structure is formed, but current crowding occurs due to limited contact area
Solution Approach 1:
The bottom surface of the ohmic source/drain electrode is divided into multiple protrusions that are spatially distributed. This segmentation provides multiple current pathways through the semiconductor film, distributing the current flow and eliminating current crowding effects while maintaining the required electrode structure.
3Device complexity
If small contact area is used for ohmic electrodes, then device structure is simplified, but thermal performance is reduced due to heat concentration
Solution Approach 1:
The bottom surface of the ohmic source/drain electrode is segmented into multiple protrusions that are spatially distributed. This segmentation provides multiple current pathways through the semiconductor film, distributing the current flow and eliminating current crowding effects while maintaining the required electrode structure.
4Manufacturing precision
If recess etching is performed, then electrode formation is achieved, but etching uniformity becomes nonuniform leading to manufacturing yield issues
Solution Approach 1:
The protrusions on the bottom surface of the ohmic source/drain electrode are formed with predetermined dimensions and spatial distribution before the final electrode formation process. This preliminary structuring ensures that subsequent etching processes operate on a more robust geometry that is less sensitive to etching parameter variations, improving etching uniformity and manufacturing yields.
Data Source
AI summary
Various embodiments of the present disclosure are directed towards a two-dimensional carrier gas (2DCG) semiconductor device comprising an ohmic source/drain electrode with a plurality of protrusions separated by gaps and protruding from a bottom surface of the ohmic source/drain electrode. The ohmic source/drain electrode overlies a semiconductor film, and the protrusions extend from the bottom surface into the semiconductor film. Further, the ohmic source/drain electrode is separated from another ohmic source/drain electrode that also overlies the semiconductor film. The semiconductor film comprises a channel layer and a barrier layer that are vertically stacked and directly contact at a heterojunction. The channel layer accommodates a 2DCG that extends along the heterojunction and is ohmically coupled to the ohmic source/drain electrode and the other ohmic source/drain electrode. A gate electrode overlies the semiconductor film between the ohmic source/drain electrode and the other source/drain electrode.