Two-Dimensional Electron Gas on Silicon Substrate
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Solution Overview
Problem
The existing methods for forming a two-dimensional electron gas are hindered by the high cost and difficulty of using GaN or SrTiO3 crystalline substrates, which are expensive and challenging to scale up for large-area applications.
Innovation Solution
The use of a silicon substrate with alternating layers of binary amorphous metal oxides, such as titanium oxide and aluminum oxide, formed via atomic layer deposition, to generate a two-dimensional electron gas, simplifying the fabrication process and reducing costs while enabling large-area production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If GaN or SrTiO3 crystalline substrates are used to form two-dimensional electron gas, then the electron gas can be generated, but the fabrication cost increases and large-area production becomes difficult
Solution Approach 1:
The patent replaces expensive GaN or SrTiO3 crystalline substrates with a silicon substrate and amorphous metal oxide layers. This substitution uses cheaper, more abundant materials (silicon, titanium oxide, aluminum oxide) to achieve the same two-dimensional electron gas generation function, directly reducing fabrication cost while enabling large-area production
Solution Approach 2:
The patent changes the physical state parameter of the metal oxide layers from crystalline to amorphous. This parameter change allows the use of silicon substrate instead of expensive crystalline substrates, while still achieving the desired electron gas generation through the specific amorphous oxide layer structure and composition
2Reliability
If GaN or SrTiO3 crystalline substrates are used to form two-dimensional electron gas, then the electron gas can be generated, but the device area is limited
Solution Approach 1:
By using silicon substrate with amorphous metal oxide layers instead of expensive crystalline substrates, the patent removes the cost and technical constraints that limited device area, enabling large-scale fabrication while maintaining electron gas generation functionality
Solution Approach 2:
The silicon substrate with amorphous oxide layers serves as a universal platform that can support large-area fabrication and maintain the two-dimensional electron gas generation function, making the technology applicable to various device configurations and scales
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the reliable and cost-effective fabrication of large-area two-dimensional electron gas devices, simplifying the fabrication process and reducing costs, while maintaining the necessary thickness for effective electron gas generation.
Implementation Method 1
a first two-dimensional electron gas generated between the first material layer and the second material layer
Implementation Method 2
formed via atomic layer deposition
Data Source
AI summary
An electronic device including a two-dimensional electron gas is provided. The electronic device includes a substrate, a first material layer disposed on the substrate and formed of a binary oxide, a second material layer disposed on the first material layer and formed of a binary oxide, and a two-dimensional electron gas generated between the first material layer and the second material layer.