3D Antifuse Structure for Smaller Area and Lower Breakdown Voltage
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Solution Overview
Problem
Antifuses in semiconductor devices occupy a large area, which is a challenge as semiconductor devices become more highly integrated, requiring smaller and more efficient fuse components for fault tolerance and programmable circuits.
Innovation Solution
A three-dimensional (3D) fuse component structure is developed, comprising an active region with recessed fuse dielectric layers and gate metal layers, where the first gate metal layer is electrically connected to the second gate metal layer, reducing area consumption and increasing the probability of successful fusion by forming a three-dimensional structure and connecting multiple fuse components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If traditional planar fuse structures are used, then the manufacturing process is simple, but the area occupied by fuse components is large
Solution Approach 1:
The patent transitions from a two-dimensional planar fuse structure to a three-dimensional structure by forming recess regions that extend vertically into the substrate. The fuse dielectric layer and gate metal layer are positioned within these recesses, creating a vertical stacking arrangement that reduces the horizontal area footprint while maintaining the necessary electrical pathways and insulation.
2Area of stationary object
If the area of fuse component is reduced, then the integration density increases, but the breakdown voltage control becomes more difficult
Solution Approach 1:
The patent applies different material properties and structural characteristics to different regions of the fuse component. The fuse dielectric layer uses high-k material with specific breakdown characteristics, while the gate metal layer provides localized electrical pathways. The recess region geometry is optimized to concentrate electric field stress at specific locations, enabling precise breakdown voltage control despite the reduced overall area.
3Reliability
If multiple fuse components are electrically connected, then the probability of successful fusion increases, but the device complexity increases
Solution Approach 1:
The patent combines multiple fuse functional elements into a single integrated three-dimensional structure. The first and second gate metal layers, along with the fuse dielectric layer and recess regions, work together as a unified fuse component system. This merging approach achieves the reliability benefits of multiple fuse components while avoiding the complexity of separate discrete structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The 3D structure significantly reduces the area occupied by fuse components, allowing for a longer overlapping perimeter without increasing area, lowering breakdown voltage, and enhancing the probability of successful fusion when a voltage is applied.
Implementation Method 1
a non-conductive circuit path may become a short circuit by activating (e.g., through breakdown, metal diffusion, transformation of properties, etc.) an antifuse
Data Source
AI summary
The present disclosure provides a method for manufacturing a fuse component having a three-dimensional (3D) structure. The method includes providing an active region, forming a first recess region and a second recess region in the active region, disposing a fuse dielectric material in the first recess region and the second recess region, and filling the first recess region and the second recess region with a gate metal material.